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- 501. Appl. Phys. Lett. 80, 2111-2113 (2002) , “Structural instability of 4H–SiC polytype induced by n-type doping”, J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li, and M. SkowronskiSpontaneous formation of stacking faults in heavily nitrogen-doped 4H-polytype silicon carbide crystals have been observed by transmission electron microscopy (TEM). Faults were present in as-grown boules and additional faults were generated by annealing in argon at 1150 °C. All faults had... (Read more)
- 502. Appl. Phys. Lett. 80, 1930-1932 (2002) , “Electrical activation studies of GaN implanted with Si from low to high dose”, James A. Fellows, Y. K. Yeo, and R. L. HengeholdElectrical activation studies of Si-implanted GaN grown on sapphire have been made as a function of ion dose and anneal temperature. Silicon was implanted at 200 keV with doses ranging from 1×1013 to 5×1015 cm2 at room temperature. The samples were... (Read more)
- 503. Appl. Phys. Lett. 80, 1767-1769 (2002) , “Thermal quenching effect of an infrared deep level in Mg-doped p-type GaN films”, Keunjoo KimThe thermal quenching of an infrared deep level of 1.21.5 eV has been investigated on Mg-doped p-type GaN films, using one- and two-step annealing processes and photocurrent measurements. The deep level appeared in the one-step annealing process at a relatively high temperature of 900... (Read more)
- 504. Appl. Phys. Lett. 80, 1731-1733 (2002) , “Optical properties of the deep Mn acceptor in GaN:Mn”, R. Y. Korotkov, J. M. Gregie, and B. W. WesselsThe optical and electrical properties of Mn-doped epitaxial GaN were studied. Low-temperature optical absorption measurements indicate the presence of a Mn-related band with a well-resolved fine structure. The zero-phonon line is at 1.418±0.002 eV with a full width at half maximum of 20±1... (Read more)
- 505. Appl. Phys. Lett. 80, 1595-1597 (2002) , “Deep-level defect characteristics in pentacene organic thin films”, Yong Suk Yang, Seong Hyun Kim, Jeong-Ik Lee, Hye Yong Chu, Lee-Mi Do, Hyoyoung Lee, Jiyoung Oh, and Taehyoung ZyungOrganic thin-film transistors using the pentacene as an active electronic material have shown the mobility of 0.8 cm2/V s and the grains larger than 1 µm. To study the characteristics of electronic charge concentrations and the interface traps of the pentacene thin films, the... (Read more)
- 506. Appl. Phys. Lett. 80, 1586-1588 (2002) , “High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition”, K. Fujihira, T. Kimoto, and H. Matsunami4HSiC layers have been homoepitaxially grown at a high growth rate of 25 µm/h by chimney-type vertical hot-wall chemical vapor deposition at 1700 °C. Through photoluminescence measurement, the intrinsic defect, so-called L1 peak, was found to be reduced under a... (Read more)
- 507. Appl. Phys. Lett. 80, 1577-1579 (2002) , “Trap-limited migration of vacancy-type defects in 7.5 keV H–-implanted Si”, Prakash N. K. DeenapanrayWe have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects... (Read more)
- 508. Appl. Phys. Lett. 80, 1340-1342 (2002) , “Electrical characterization of vapor-phase-grown single-crystal ZnO”, F. D. Auret, S. A. Goodman, M. J. Legodi, and W. E. MeyerGold Schottky-barrier diodes (SBDs) were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with... (Read more)
- 509. Appl. Phys. Lett. 80, 1147-1149 (2002) , “Formation and decay mechanisms of electron–hole pairs in amorphous SiO2”, T. Uchino, M. Takahashi, and T. YokoWe present theoretical evidence for the creation of an electronhole pair at an edge-sharing SiO4 site that is supposed to exist in a-SiO2 as an intrinsic structural defect. The present electronhole pair consists of a nonbridging oxygen hole center and an... (Read more)
- 510. Appl. Phys. Lett. 80, 1001-1003 (2002) , “Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition”, M. G. Cheong, K. S. Kim, C. S. Kim, R. J. Choi, H. S. Yoon, N. W. Namgung, E.-K. Suh, and H. J. LeeP-type GaN layers were grown on sapphire by metalorganic chemical-vapor deposition and then rapid thermal annealing (RTA) was performed to electrically activate Mg impurities. Varied acceptor densities were obtained by RTA temperature and Mg concentration. Temperature-dependent Hall effects... (Read more)
- 511. J. Appl. Phys. 92, 786 (2002) , “Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire”, P. Laukkanen, S. Lehkonen, P. Uusimaa, and M. PessaMolecular-beam epitaxy (MBE) has been utilized to grow Si-doped GaN layers on GaN/sapphire templates prepared by hydride vapor phase epitaxy. An extensive set of characterization techniques is applied to investigate the layers. Positron annihilation experiments indicate that the samples contain open... (Read more)
- 512. J. Appl. Phys. 92, 77 (2002) , “Luminescence associated with copper in ZnGeP2”, Lijun Wang, Lihua Bai, K. T. Stevens, N. Y. Garces, and N. C. GilesBulk ZnGeP2 crystals were diffusion doped with copper and investigated using photoluminescence (PL) spectroscopy, photoluminescence excitation (PLE), and Fourier-transform-infrared spectroscopy. A PL band at 1.3 eV at 5 K was observed. The temperature dependence of the 1.3-eV PL band... (Read more)
- 513. J. Appl. Phys. 92, 6666 (2002) , “Raman and cathodoluminescence study of dislocations in GaN”, H. Lei and H. S. LeipnerStructural and optical properties of freshly created and in-grown dislocations in GaN single crystal are investigated by Raman and cathodoluminescence (CL) microscopy. The introduction of a high density of dislocations by micro-indentation is accompanied by the generation of intrinsic point defects.... (Read more)
- 514. J. Appl. Phys. 92, 6561 (2002) , “Many optical absorption peaks observed in electron-irradiated n-type Si”, M. Suezawa, N. Fukata, T. Mchedlidze, and A. KasuyaThe properties of many optical absorption peaks in electron-irradiated n-type Si crystals were studied. Specimens were prepared from various Si crystals. After chemical etching, they were irradiated with 3 MeV electrons at room temperature (RT). Their optical absorption spectra were measured... (Read more)
- 515. J. Appl. Phys. 92, 6343 (2002) , “Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN films”, Chinkyo Kim, Sungwoo Kim, Yoonho Choi, and Shi-Jong LeemAt various doping concentrations of Si in GaN films, the correlation between the type of dislocations and photoluminescence (PL) characteristics was investigated. A different broadening behavior of symmetric and asymmetric Bragg peaks as a function of carrier concentration provided... (Read more)
- 516. J. Appl. Phys. 92, 5942 (2002) , “Cation and anion vacancies in proton irradiated GaInP”, J. Dekker, J. Oila, and K. SaarinenDefects in electron irradiated GaInP grown by molecular beam epitaxy have been investigated using deep level transient spectroscopy (DLTS) and positron annihilation spectroscopy (PAS). PAS measurements indicate that vacancies are introduced at a high rate. Core annihilation curves, compared with... (Read more)
- 517. J. Appl. Phys. 92, 5740 (2002) , “Model for electrical isolation of GaN by light-ion bombardment”, A. I. TitovWe present a model for electrical isolation of GaN by light-ion bombardment. In our model, a decrease in the concentration of free carriers responsible for isolation is assumed to be due to the formation of complexes of ion-beam-generated point defects with shallow donor or acceptor dopants. These... (Read more)
- 518. J. Appl. Phys. 92, 5590 (2002) , “Electrical characterization of acceptor levels in Mg-doped GaN”, Yoshitaka NakanoThermal admittance and current deep-level transient spectroscopy techniques have been applied to Schottky diodes fabricated on Mg-doped GaN grown by metalorganic chemical vapor deposition to investigate the dependence of the Mg acceptor levels on the annealing temperature. Both measurement... (Read more)
- 519. J. Appl. Phys. 92, 5566 (2002) , “Hyper-Rapid thermal defect annealing during grinding of ZnO powders”, M. G. Kakazey, M. Vlasova, M. Dominguez-Patiño, G. Dominguez-Patiño, G. Gonzalez-Rodriguez, and B. Salazar-HernandezWe report on the changes in the defect structure of ZnO particles that take place during the grinding of pure ZnO powders and mixtures ZnOSnO2 and ZnOTiO2 powders. The qualitative differences in the electron paramagnetic resonance spectra for different specimens... (Read more)
- 520. J. Appl. Phys. 92, 549 (2002) , “Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC”, M. Laube, F. Schmid, and G. PenslComparative Hall effect investigations are conducted on N- and P-implanted as well as on (N + P)-coimplanted 4HSiC epilayers. Box profiles with three different mean concentrations ranging from 2.5×1018 to 3×1020 cm3 to a depth of 0.8 µm... (Read more)
- 521. J. Appl. Phys. 92, 5238 (2002) , “Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy”, A. Y. Polyakov, A. V. Govorkov, and N. B. SmirnovMicrocathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) imaging of the freestanding n-GaN samples grown by hydride vapor phase epitaxy were made. Dark-spot defects in plan-view EBIC and MCL images and dark line defects in MCL images taken on the... (Read more)
- 522. J. Appl. Phys. 92, 4989 (2002) , “Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy”, A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, and N. Y. PashkovaOptical absorption spectra, microcathodoluminescence (MCL) spectra, and electrical properties of GaMnN films grown by molecular-beam epitaxy with Mn concentration in the range of 3 to 10 at. % were studied. Optical absorption and MCL spectra show the presence of strong bands corresponding to the... (Read more)
- 523. J. Appl. Phys. 92, 4465 (2002) , “Capacitance dispersion in ion implanted 4H and 6H-silicon carbide”, A. O. Evwaraye, S. R. Smith, W. C. Mitchel, and M. A. CapanoNitrogen doped 4HSiC and 6HSiC epitaxial layers with net doping concentration of 1.5×1015 cm3 were implanted with either Al, B, or Ar ions at 600 °C. The energy of the ions was 160 keV and at a dose of 2×1016 cm2.... (Read more)
- 524. J. Appl. Phys. 92, 4307 (2002) , “Athermal annealing at room temperature and enhanced activation of low- energy boron implants with high-energy Si coimplantation”, Lin Shao, Xuemei Wang, and Jiarui LiuInteractions between shallow implanted boron and high-energy silicon implants have been investigated. Athermal annealing of implantation damage induced by low energy boron implants at room temperature was observed after coimplantation and such annealing effects were more obvious when the dosage of... (Read more)
- 525. J. Appl. Phys. 92, 4126 (2002) , “Thermoelectric effect spectroscopy of deep levels in semi-insulating GaN”, U. V. Desnica and M. PavloviThe report of thermoelectric effect spectroscopy (TEES) applied on semi-insulating GaN was presented. The type of TEES setup, especially suitable for film-on-substrate samples, was devised. TEES enabled determination of sign of observed deep traps. Using TEES and thermally stimulated current... (Read more)
- 526. J. Appl. Phys. 92, 3755 (2002) , “High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon”, J. H. Evans-Freeman, P. Y. Y. Kan, and N. AbdelgaderWe have carried out high resolution Laplace deep level transient Spectroscopy (DLTS) and conventional DLTS on silicon implanted with very low doses of either silicon, germanium, erbium, or ytterbium, and compared the results to those from electron-irradiated silicon. DLTS spectra of all the samples... (Read more)
- 527. J. Appl. Phys. 92, 3657 (2002) , “Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN”, Yasuo Koide, D. E. Walker, Jr, B. D. White, and L. J. BrillsonBoth luminescence properties and dissociation kinetics of MgH complex for as-grown Mg-doped GaN are simultaneously investigated by low-energy electron-excited nanoluminescence (LEEN) spectroscopy. Ultraviolet luminescence at 3.23.3 eV and blue luminescence at 2.82.9 eV are observed... (Read more)
- 528. J. Appl. Phys. 92, 3410 (2002) , “Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements”, J. M. Tsia, C. C. Ling, C. D. Beling, and S. FungA ±100 V square wave applied to a Au/semi-insulating SIGaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the... (Read more)
- 529. J. Appl. Phys. 92, 3130 (2002) , “Electrical and optical properties of GaN films implanted with Mn and Co”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, and N. Y. PashkovaOptical transmission spectra, microcathodoluminescence spectra, capacitancevoltage and capacitancefrequency curves, temperature dependence of resistivity and deep level spectra with both electrical and optical injection were measured on n-GaN samples implanted with high doses of... (Read more)
- 530. J. Appl. Phys. 92, 2575 (2002) , “Substitutional and interstitial carbon in wurtzite GaN”, A. F. WrightFirst-principles theoretical results are presented for substitutional and interstitial carbon in wurtzite GaN. Carbon is found to be a shallow acceptor when substituted for nitrogen (CN) and a shallow donor when substituted for gallium (CGa). Interstitial carbon... (Read more)
- 531. J. Appl. Phys. 92, 2501 (2002) , “On the nature of ion implantation induced dislocation loops in 4H-silicon carbide”, P. O. Å. Persson and L. HultmanTransmission electron microscopy was used to investigate 11B, 12C, 14N, 27Al, 28Si, and 37Ar ion-implanted 4H-SiC epilayers and subsequent defect formation after high temperature annealing. During the annealing process extrinsic... (Read more)
- 532. J. Appl. Phys. 92, 2437 (2002) , “Optical properties of oxygen precipitates and dislocations in silicon”, S. Binetti, S. Pizzini, E. Leoni, and R. SomaschiniPhotoluminescence (PL) and deep level transient spectroscopy (DLTS) measurements were used to study the origin of optical emissions in the 0.81.0 eV region of selected oxygen precipitated and dislocated silicon samples. It was shown that the D1 band, present in both types of samples, is the... (Read more)
- 533. J. Appl. Phys. 92, 1968 (2002) , “Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance”, H. W. Dong, Y. W. Zhao, Y. H. Zhang, J. H. Jiao, J. Q. Zhao, and L. Y. LinDeep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have been characterized by optical transient current spectroscopy (OTCS). Compared with the OTCS result of the SI InP prepared by annealing in pure phosphorus (PP) ambiance, the IP SI InP presents only two... (Read more)
- 534. J. Appl. Phys. 92, 1906 (2002) , “Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films”, E. San Andrés, A. del Prado, I. Mártil, and G. González-DíazThe bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600... (Read more)
- 535. J. Appl. Phys. 92, 188 (2002) , “Grown-in defects in nitrogen-doped Czochralski silicon”, Xuegong Yu, Deren Yang, Xiangyang Ma, Jiansong Yang, Liben Li, and Duanlin QueGrown-in defects including oxygen precipitates and voids in nitrogen-doped Czochralski (NCZ) silicon have been investigated. It was found that the formation of grown-in oxygen precipitates in NCZ silicon can be divided into two stages. The large precipitates supposed to be enhanced by... (Read more)
- 536. J. Appl. Phys. 92, 1238 (2002) , “Dissociation of nitrogen-oxygen complexes by rapid thermal anneal heat treatments”, J. L. Libbert, L. Mule'Stagno, and M. BananFloat zone silicon melt doped or implanted with nitrogen exhibits absorption bands in the midinfrared range that are caused by localized vibration modes of nitrogen pairs. Czochralski-grown silicon crystals melt doped with nitrogen exhibit both these lines and additional absorption lines related to... (Read more)
- 537. J. Appl. Phys. 92, 1221 (2002) , “Thermoluminescence study of stoichiometric LiNbO3 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonThermoluminescence (TL), optical absorption, and electron paramagnetic resonance (EPR) have been used to characterize point defects in Mg-doped stoichiometric LiNbO3. A broad TL emission, peaking at 440 nm, is observed near 94 K when these crystals are irradiated at 77 K and then rapidly... (Read more)
- 538. J. Appl. Phys. 91, 9887 (2002) , “Effect of intrinsic defects on the electron mobility of gallium arsenide grown by molecular beam epitaxy and metal organic chemical vapor deposition”, Anouar JorioTemperature dependent electron mobility measurements are reported for lightly doped n-type gallium arsenide (GaAs) grown by metal organic chemical vapor deposition (MOCVD GaAs). Using the BrooksHerring model, the charge state of the impurity scattering centers is deduced to be 1. The... (Read more)
- 539. J. Appl. Phys. 91, 9182 (2002) , “Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC”, F. Schmid, M. Laube, and G. PenslAluminum-doped 4H-SiC epilayers with [0001]- or [1120]-oriented faces were implanted with phosphorus and subsequently annealed in a temperature range of 15501700 °C. The electrical activation of phosphorus ions was studied by Hall effect investigations. Identical free electron... (Read more)
- 540. J. Appl. Phys. 91, 884 (2002) , “Defects in N/Ge coimplanted GaN studied by positron annihilation”, Yoshitaka Nakano and Tetsu KachiWe have applied positron annihilation spectroscopy to study the depth distributions and species of defects in N-, Ge-, and N/Ge-implanted GaN at dosages of 1×1015 cm2. For all the implanted samples, Ga vacancies introduced by ion-implantation are found to diffuse... (Read more)
- 541. J. Appl. Phys. 91, 815 (2002) , “Paramagnetic defects in ultrafine silicon particles”, Minoru Dohi, Hiroshi Yamatani, and Tetsuo FujitaTwo defects in the surface oxide layer of ultrafine Si particles, temporarily named an EXL center and an EXH center, were investigated by electron spin resonance (ESR). The Si particles were prepared by a conventional gas evaporation method. The specimens were... (Read more)
- 542. J. Appl. Phys. 91, 7926 (2002) , “Electron paramagnetic resonance study of La0.7Ca0.3–xBaxMnO3 lanthanum manganites”, A. N. UlyanovElectron paramagnetic resonance (ESR) study of La0.7Ca0.3xBaxMnO3 manganites (x = 0; 0.15; 0.3) is presented. Experimentally observed exponential decreasing of line intensity on temperature is in agreement with the deduced one... (Read more)
- 543. J. Appl. Phys. 91, 6580 (2002) , “Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovConcentrations of deep hole traps were measured in a set of hydride vapor phase epitaxy grown samples with thicknesses varying from 2.6 to 68 µm. Results were obtained from low temperature capacitancevoltage measurements before and after illumination and from deep level transient... (Read more)
- 544. J. Appl. Phys. 91, 6488 (2002) , “Defects in silicon-on-insulator wafers and their hydrogen interaction studied by monoenergetic positron beams”, Akira Uedono and Zhi Quan ChenVacancy-type defects in separation-by-implanted oxygen wafers were probed using monoenergetic positron beams. We measured the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons. The species of the defects in Si-on-insulator (SOI) layers were identified as... (Read more)
- 545. J. Appl. Phys. 91, 6388 (2002) , “Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis”, Y. ZhangDamage evolution and subsequent recovery in 4HSiC epitaxial layers irradiated with 1.1 MeV Al22 + " align="middle"> molecular ions at 150 K to ion fluences from 1.5×1013 to 2.25×1014 Al cm2 were studied by Rutherford... (Read more)
- 546. J. Appl. Phys. 91, 6209 (2002) , “Cathodoluminescence from BN buried layers by high-dose ion implantation”, L. Barbadillo, M. Cervera, M. J. Hernández, P. Rodríguez, and J. PiquerasBoron, nitrogen, and carbon ions were co-implanted in silicon wafers, and subsequently annealed. Infrared spectra show the formation of BN-rich buried layers. The presence of a band at 1375 cm1 characteristic of boron nitride in a hexagonal configuration has been observed. Traces of... (Read more)
- 547. J. Appl. Phys. 91, 5867 (2002) , “Chemical origin of the yellow luminescence in GaN”, S. O. KucheyevThe influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act... (Read more)
- 548. J. Appl. Phys. 91, 5831 (2002) , “Hydrogen-defect complexes formed by neutron irradiation of hydrogenated silicon observed by optical absorption measurement”, N. Fukata, T. Ohori, and M. SuezawaNeutron-irradiation-induced defects in hydrogenated Si were investigated by detecting optical absorption due to their complexes with hydrogen. Specimens were doped with hydrogen by heating in H2 gas at 1300 °C followed by quenching in water. They were then irradiated with neutrons.... (Read more)
- 549. J. Appl. Phys. 91, 5765 (2002) , “Deep levels and trapping mechanisms in chemical vapor deposited diamond”, Mara Bruzzi, David Menichelli, and Silvio SciortinoDetector-grade undoped chemical vapor deposited (CVD) diamond samples have been studied with thermally stimulated currents (TSC) and photoinduced current transient spectroscopy (PICTS) analyses in the temperature range 300650 K. Two previously unknown defects have been identified,... (Read more)
- 550. J. Appl. Phys. 91, 5307 (2002) , “Vacancy-type defects in BaTiO3/SrTiO3 structures probed by monoenergetic positron beams”, Akira UedonoThin BaTiO3 films grown on SrTiO3 substrates were characterized by means of positron annihilation. The films were deposited by molecular-beam epitaxy without using oxygen source. We measured the Doppler broadening spectra of annihilation radiation and x-ray diffraction of the... (Read more)
- 551. J. Appl. Phys. 91, 5158 (2002) , “Deep levels in strongly Si-compensated GaAs and AlGaAs”, Tadashige Sato and Toshio IshiwatariFive electron traps were detected successfully in heavily Si-doped GaAs and AlxGa1xAs of low Al content with a Si concentration of above 1×1019 cm3 using deep level transient spectroscopy. The junctions were grown by liquid... (Read more)
- 552. J. Appl. Phys. 91, 4988 (2002) , “Native defects and self-diffusion in GaSb”, M. Hakala, M. J. Puska, and R. M. NieminenThe native defects in GaSb have been studied with first-principles total-energy calculations. We report the structures and the formation energies of the stable defects and estimate the defect concentrations under different growth conditions. The most important native defect is the GaSb... (Read more)
- 553. J. Appl. Phys. 91, 4438 (2002) , “Electron paramagnetic resonance in boron carbide”, M. G. Kakazey, J. G. Gonzalez-Rodriguez, and M. V. VlasovaElectron paramagnetic resonance (EPR) signals from powdered samples of boron carbide B4C are recorded at g factor 2.0028±0.0002. The dependence on temperature and thermal treatment of the samples is studied. We demonstrated that native defects of boron carbide and conduction... (Read more)
- 554. J. Appl. Phys. 91, 4136 (2002) , “Difference of secondary defect formation by high energy B+ and Al+ implantation into 4H–SiC”, Toshiyuki OhnoThe difference of secondary defect formation between high-energy B+ and Al+ implanted layers was investigated by transmission electron microscopy. At the same volume concentration of implanted ions, the density of secondary defects in the Al+ implanted layers is... (Read more)
- 555. J. Appl. Phys. 91, 3931 (2002) , “Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors”, A. H. Deng, Y. Y. Shan, S. Fung, and C. D. BelingUnlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level... (Read more)
- 556. J. Appl. Phys. 91, 3741 (2002) , “Interstitial boron and oxygen related defects as the origin of the deep energy level in Czochralski-grown silicon”, Yoshio Ohshita, Tuong Khanh Vu, and Masafumi YamaguchiThe structure of the B and O related defect complex in Czochralski (CZ)-grown Si crystal is theoretically studied by using ab initio calculations. When a B-doped CZ Si wafer is used as a solar cell material, light irradiation and/or minority carrier injection causes the solar cell conversion... (Read more)
- 557. J. Appl. Phys. 91, 3471 (2002) , “Site-occupying behavior of boron in compensated p-type 4H–SiC grown by sublimation epitaxy”, A. Kakanakova-Georgieva and R. YakimovaResults from electrical and optical measurements of boron in compensated p-type 4HSiC layers doped with Al, N, and B are reported. The layers were produced by sublimation epitaxy and characterized by secondary ion mass spectrometry, capacitancevoltage, and cathodoluminescence... (Read more)
- 558. J. Appl. Phys. 91, 2890 (2002) , “Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers”, A. Kakanakova-Georgieva, R. Yakimova, and A. HenryA comparative analysis of cathodoluminescence spectra in 4HSiC layers with different N, Al, and B content is reported. The layers were produced by sublimation epitaxy and residual impurity concentrations were determined by secondary ion mass spectrometry. Epilayers doped with B in a wide... (Read more)
- 559. J. Appl. Phys. 91, 2391 (2002) , “Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells”, Aurangzeb Khan and Masafumi YamaguchiThe study presents detailed isothermal and isochronal annealing recovery of photovoltaic parameters in n+/p InGaP solar cells after 1 MeV electron irradiation. Correlation of the solar cells characteristics with changes in the deep level transient spectroscopy data observed... (Read more)
- 560. J. Appl. Phys. 91, 2028 (2002) , “Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC”, T. Egilsson, I. G. Ivanov, A. Henry, and E. JanzénWe report photoluminescence excitation spectra of the nitrogen (N) donor bound excitons (BE) in 4H- and 6H-SiC. The spectra reveal several excited states of the N-BEs. An attempt is made in the article to classify the N-BE states according to a simple shell model. ©2002 American Institute of... (Read more)
- 561. J. Appl. Phys. 91, 178 (2002) , “Electrical characterization of magnesium implanted gallium nitride”, A. Krtschil, A. Kielburg, H. Witte, J. Christen, and A. KrostGallium nitride layers grown by molecular beam epitaxy on c axis oriented sapphire substrates were implanted with 180 keV magnesium ions with ion doses between 1×1014 and 1×1016 cm2. The implantation induced defect states were investigated by... (Read more)
- 562. J. Appl. Phys. 91, 166 (2002) , “Influence of oxygen precipitation on the measure of interstitial oxygen concentration in silicon from the 1207 cm–1 infrared absorption band”, A. Sassella and A. BorghesiThe possible use of the absorption band at 1207 cm1 for the measurement of the concentration of interstitial oxygen (Oi) in silicon samples subjected to a precipitation thermal treatment is discussed. The results of low temperature infrared absorption measurements... (Read more)
- 563. J. Appl. Phys. 91, 1354 (2002) , “Identification of silicon as the dominant hole trap in YVO4 crystals”, N. Y. Garces and L. E. HalliburtonElectron paramagnetic resonance (EPR) and electronnuclear double resonance (ENDOR) have been used to characterize the dominant hole trap in undoped Czochralski-grown yttriumorthovanadate (YVO4) crystals. A silicon impurity, present inadvertently, replaces a vanadium ion and... (Read more)
- 564. J. Appl. Phys. 91, 1324 (2002) , “Metastable defects in 6H–SiC: experiments and modeling”, C. G. Hemmingsson, N. T. Son, O. Kordina, and E. JanzénUsing various junction space-charge techniques, annealing, and simulation, a metastable defect in 6H SiC have been characterized. We suggest a configuration coordinate diagram with three configurations, where two of them can only exist when the defect is occupied by one or more electrons. The... (Read more)
- 565. J. Appl. Phys. 91, 1198 (2002) , “Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions”, C. A. LondosThe VO defect is one of the major defects produced by irradiation in Cz-grown Si. Its presence in the infrared spectra is manifested by a localized vibration mode (LVM) band at 829 cm1. Upon annealing, the decay of this band is accompanied by the emergence in the spectra of another... (Read more)
- 566. J. Appl. Phys. 91, 1046 (2002) , “Lattice site location of ion-implanted 8Li in Silicon Carbide”, S. Virdis, U. Vetter, C. Ronning, H. Kröger, and H. HofsässThe lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive 8Li ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and blocking effects of 1.6 MeV alpha particles emitted in the decay were... (Read more)
- 567. Appl. Phys. Lett. 79, 961-963 (2001) , “Radiotracer investigation of a deep Be-related band gap state in 4H-SiC”, F. Albrecht, J. Grillenberger, G. Pasold, and W. WitthuhnOne Be-related deep level in the band gap of 4H-SiC was identified by radiotracer deep level transient spectroscopy (DLTS). The radioactive isotope 7Be was recoil implanted into p-type as well as n-type 4H-SiC for these radiotracer experiments. DLTS spectra were taken... (Read more)
- 568. Appl. Phys. Lett. 79, 943-945 (2001) , “Green luminescent center in undoped zinc oxide films deposited on silicon substrates”, Bixia Lin and Zhuxi FuThe photoluminescence (PL) spectra of the undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied. There are two emission peaks, centered at 3.18 eV (UV) and 2.38 eV (green). The variation of these peak intensities and that of the IV properties of... (Read more)
- 569. Appl. Phys. Lett. 79, 931-933 (2001) , “Influence of microstructure on electrical properties of diluted GaNxAs1–x formed by nitrogen implantation”, J. Jasinski, K. M. Yu, W. Walukiewicz, J. Washburn, and Z. Liliental-WeberStructural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that... (Read more)
- 570. Appl. Phys. Lett. 79, 69-71 (2001) , “Carrier relaxation dynamics for As defects in GaN”, Bernard Gil, Aurélien Morel, Thierry Taliercio, and Pierre LefebvreLong decay times in the 50150 ns range have been measured for the characteristic blue photoluminescence that peaks at 2.6 eV in GaN:As. We interpret these long decay times according to the theoretical predictions that this blue photoluminescence is caused by the incorporation of arsenic on the... (Read more)
- 571. Appl. Phys. Lett. 79, 4539-4540 (2001) , “Traps at the bonded interface in silicon-on-insulator structures”, I. V. Antonova, O. V. Naumova, D. V. Nikolaev, and V. P. PopovIn this study, we compared the trap density distributions, Dit, in the band gap of silicon at the Si/thermal SiO2 interface and at the bonded interface of the silicononinsulator structure, deduced from deep level transient spectroscopy measurements. The trap... (Read more)
- 572. Appl. Phys. Lett. 79, 4369-4371 (2001) , “Synthesis and characterization of luminescent ZrO2:Mn, Cl powders”, M. García-HipólitoZrO2:Mn, Cl luminescent powders have been synthesized at temperatures ranging from 250 to 500 °C. X-ray diffraction measurements indicate changes in the crystallinity of the material as a function of the processing temperature. The photoluminescence spectra show bands associated with... (Read more)
- 573. Appl. Phys. Lett. 79, 4328-4330 (2001) , “Silicon self-diffusion under extrinsic conditions”, Ant Ural, P. B. Griffin, and J. D. PlummerSelf-diffusion in silicon is investigated under extrinsic carrier conditions by monitoring the diffusion of 30Si in isotopically enriched silicon layers with boron and phosphorus background doping. At 1000 °C, we find that the Si self-diffusion coefficient is slightly enhanced in both... (Read more)
- 574. Appl. Phys. Lett. 79, 4313-4315 (2001) , “Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures?”, J. Gebauer, R. Zhao, P. Specht, and E. R. WeberWe investigate native defects in nonstoichiometric GaAs layers grown at low temperatures by molecular-beam epitaxy (LT-GaAs) doped with Be. Ga vacancies (VGa) are found by positron annihilation in all layers. The concentration of VGa is independent of the Be... (Read more)
- 575. Appl. Phys. Lett. 79, 4145-4147 (2001) , “Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer”, E. Napolitani, A. Coati, D. De Salvador, and A. CarneraA method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed... (Read more)
- 576. Appl. Phys. Lett. 79, 4106-4108 (2001) , “Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon”, A. Sassella and A. BorghesiThe spurious contribution of oxide precipitates to the infrared absorption of interstitial oxygen in silicon is determined from spectra collected at 7 K for samples with different initial interstitial oxygen Oi concentration subjected to a three-step thermal treatment. These data... (Read more)
- 577. Appl. Phys. Lett. 79, 4034-4036 (2001) , “Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique”, H. Ö. Ólafsson and E. Ö. SveinbjörnssonWe demonstrate the usefulness of the thermally-stimulated current (TSC) technique for investigating shallow interface state defects in silicon carbide metaloxidesemiconductor (MOS) structures. For dry oxides, low-temperature TSC measurements reveal a high density of near-interfacial... (Read more)
- 578. Appl. Phys. Lett. 79, 3944-3946 (2001) , “Luminescence from stacking faults in 4H SiC”, S. G. Sridhara, F. H. C. Carlsson, J. P. Bergman, and E. JanzénA previously unreported photoluminescence spectrum observed in certain 4H SiC bipolar diodes after extended forward voltage operation is reported. We assign this emission to exciton recombination at local potential fluctuations caused by stacking faults, which are created during operation of the... (Read more)
- 579. Appl. Phys. Lett. 79, 3630-3632 (2001) , “Reconstruction defects on partial dislocations in semiconductors”, João F. JustoUsing ab initio total energy calculations, we investigated the structural and electronic properties of reconstruction defects, or antiphase defects, in the core of a 30° partial dislocation in silicon and gallium arsenide. In GaAs, we identified two different reconstruction defects in the... (Read more)
- 580. Appl. Phys. Lett. 79, 359-361 (2001) , “Mechanism of electron trapping in Ge-doped SiO2 glass”, T. Uchino, M. Takahashi, and T. YokoWe present a possible mechanism of electron trapping in Ge-doped SiO2 glass on the basis of first-principles quantum chemical calculations on clusters of atoms modeling the local structures in the glassy system. The calculations suggest that the so-called "Ge(1) and Ge(2)"... (Read more)
- 581. Appl. Phys. Lett. 79, 326-328 (2001) , “Room temperature persistent spectral hole burning in x-ray irradiated Eu3 + -doped borate glasses”, Woon Jin Chung and Jong HeoIrradiation of x-rays has induced room-temperature persistent spectral hole burning (PSHB) in Eu3 + -doped borate glasses melted under an inert atmosphere. Defects were formed by x-ray irradiation and these defects, especially electron trapping centers near rare-earth ions in glasses,... (Read more)
- 582. Appl. Phys. Lett. 79, 3239-3241 (2001) , “The nature of arsenic incorporation in GaN”, A. Bell and F. A. PonceA systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4×1017 to 4.2×1018 cm3. Secondary ion mass spectroscopy data show... (Read more)
- 583. Appl. Phys. Lett. 79, 3089-3091 (2001) , “Formation of nonradiative defects in molecular beam epitaxial GaNxAs1–x studied by optically detected magnetic resonance”, N. Q. Thinh, I. A. Buyanova, and W. M. ChenThe formation of two nonradiative defects (i.e., an AsGa-related complex and an unknown deep-level defect with g = 2.03) in GaNxAs1x epilayers and GaAs/GaNxAs1x multiple-quantum-well structures,... (Read more)
- 584. Appl. Phys. Lett. 79, 3080-3082 (2001) , “Fingerprints of two distinct defects causing light-induced photoconductivity degradation in hydrogenated amorphous silicon”, Stephan Heck and Howard M. BranzWe find distinct experimental fingerprints of two metastable defects created during illumination of hydrogenated amorphous silicon. The well-studied threefold-coordinated silicon dangling bond defect has an anneal activation energy near 1.1 eV and dominates annealing experiments above about 110... (Read more)
- 585. Appl. Phys. Lett. 79, 3074-3076 (2001) , “Electrical characterization of 1.8 MeV proton-bombarded ZnO”, F. D. Auret, S. A. Goodman, M. Hayes, M. J. Legodi, and H. A. van LaarhovenWe report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons. From capacitancevoltage measurements, we found that ZnO is remarkably resistant to high-energy proton bombardment and that each... (Read more)
- 586. Appl. Phys. Lett. 79, 3068-3070 (2001) , “Lattice location of phosphorus in n-type homoepitaxial diamond films grown by chemical-vapor deposition”, Masataka HasegawaThe lattice location of phosphorus dopant atoms in n-type homoepitaxial diamond {111} films grown by chemical-vapor deposition has been investigated by Rutherford backscattering spectrometry and particle-induced x-ray emission under ion-channeling conditions. It is found that phosphorus... (Read more)
- 587. Appl. Phys. Lett. 79, 2922-2924 (2001) , “Defect annealing in Cu(In,Ga)Se2 heterojunction solar cells after high-energy electron irradiation”, A. Jasenek, H. W. Schock, J. H. Werner, and U. RauCu(In,Ga)Se2/CdS/ZnO solar cells need at least 1018 cm2 electrons of an energy of 1 MeV to degrade in their power conversion efficiency by more than 25%. Even after such high irradiation doses, annealing of the irradiated solar cells at temperatures between... (Read more)
- 588. Appl. Phys. Lett. 79, 2901-2903 (2001) , “Observation of nitrogen vacancy in proton-irradiated AlxGa1–xN”, Qiaoying Zhou and M. O. ManasrehThe optical absorption spectra of nitrogen vacancy (VN) in proton-irradiated AlxGa1xN samples are observed. The spectra obtained for samples with 0.55x1 exhibit a peak and a shoulder with their energy positions dependent on the Al mole... (Read more)
- 589. Appl. Phys. Lett. 79, 2877-2879 (2001) , “Identification of surface anion antisite defects in (110) surfaces of III–V semiconductors”, Ph. Ebert, P. Quadbeck, and K. UrbanWe identify surface anion antisite defects in (110) surfaces of GaAs, GaP, and InP using scanning tunneling microscopy combined with density-functional theory calculations. In contrast to subsurface arsenic antisite defects, surface antisite defects are electrically inactive and have a very... (Read more)
- 590. Appl. Phys. Lett. 79, 2728-2730 (2001) , “Tellurium antisites in CdZnTe”, Muren Chu, Sevag Terterian, David Ting, C. C. Wang, H. K. Gurgenian, and Shoghig MesropianThe electrical properties of CdTe and Cd1xZnxTe crystals grown under excess tellurium by a modified Bridgman technique are critically dependent on the zinc content. Below an x value of 0.07, the as-grown CdZnTe crystals are n type while, above... (Read more)
- 591. Appl. Phys. Lett. 79, 2570-2572 (2001) , “Identification of Si and O donors in hydride-vapor-phase epitaxial GaN”, W. J. MooreDonor impurity excitation spectra in the infrared from two high-quality, not-intentionally doped, hydride-vapor-phase epitaxial GaN wafers are reported. Two previously observed shallow donors which we designate N1 and N2 were observed in both wafers. However, spectra of one wafer are dominated by N1... (Read more)
- 592. Appl. Phys. Lett. 79, 2405-2407 (2001) , “Deep levels of tantalum in silicon carbide and incorporation during crystal growth”, J. Grillenberger, G. Pasold, and W. WitthuhnBand-gap states of tantalum in n-type 6H and 15Rsilicon carbide (SiC) were investigated by deep-level transient spectroscopy (DLTS). The samples were doped with Ta by ion implantation followed by an annealing procedure. DLTS measurements reveal two implantation-induced band-gap... (Read more)
- 593. Appl. Phys. Lett. 79, 2402-2404 (2001) , “Can we make the SiC–SiO2 interface as good as the Si–SiO2 interface?”, Massimiliano Di VentraA simple analysis based on the bulk valence and conduction densities of states was employed to estimate the interface-state densities for interfaces between the three most common SiC polytypes (3C, 4H, and 6H) and SiO2. We found that all polytypes had comparable conduction-band... (Read more)
- 594. Appl. Phys. Lett. 79, 200-202 (2001) , “Nitrogen-related complexes in gallium arsenide”, J. E. LowtherA first-principles pseudopotential method has been used to study some potentially important metastable defects in N-doped GaAs. Formation energies have been obtained and related to those of As and Ga vacancies in the intrinsic material. Of the structures considered, two are identified that crucially... (Read more)
- 595. Appl. Phys. Lett. 79, 1983-1985 (2001) , “Binding energy of vacancies to clusters formed in Si by high-energy ion implantation”, R. KalyanaramanMeasurements of the binding energy (Eb) of vacancies to vacancy clusters formed in silicon following high-energy ion implantation are reported. Vacancy clusters were created by 2 MeV, 2×1015 cm2 dose Si implant and annealing. To prevent... (Read more)
- 596. Appl. Phys. Lett. 79, 1834-1836 (2001) , “Fermi level dependence of hydrogen diffusivity in GaN”, A. Y. Polyakov and N. B. SmirnovHydrogen diffusion studies were performed in GaN samples with different Fermi level positions. It is shown that, at 350 °C, hydrogen diffusion is quite fast in heavily Mg doped p-type material with the Fermi level close to Ev + 0.15 eV, considerably slower in... (Read more)
- 597. Appl. Phys. Lett. 79, 1631-1633 (2001) , “Current deep-level transient spectroscopy investigation of acceptor levels in Mg-doped GaN”, Yoshitaka Nakano and Tetsu KachiThe current deep-level transient spectroscopy (I-DLTS) technique was used to investigate acceptor levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy. For activation of the Mg dopants, rapid thermal annealing was performed with a SiO2 encapsulation layer at 850 °C... (Read more)
- 598. Appl. Phys. Lett. 79, 1492-1494 (2001) , “Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si”, R. S. Brusa, W. Deng, G. P. Karwasz, and A. ZeccaWe report the direct measurement of vacancy-like defects related to oxygen in the oxygen precipitation process in Czochralski Si. The vacancy-like defects were detected by measuring the positron lifetime and narrowing of the positronelectron annihilation momentum distribution. Oxygen atoms... (Read more)
- 599. Appl. Phys. Lett. 79, 1453-1455 (2001) , “Interstitial oxygen loss and the formation of thermal double donors in Si”, Young Joo Lee, J. von Boehm, and R. M. NieminenThe combination of first-principles total energy calculations and a general kinetic model, which takes into account all processes of association, dissociation, and restructuring, is used to study the kinetics of thermal double donors (TDDs) in silicon over the temperature range of 300650... (Read more)
- 600. Appl. Phys. Lett. 79, 1273-1275 (2001) , “Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon”, V. C. Venezia, L. Pelaz, and H.-J. L. GossmannWe have measured the evolution of the excess-vacancy region created by a 2 MeV, 1016/cm2 Si implant in the silicon surface layer of silicon-on-insulator substrates. Free vacancy supersaturations were measured with Sb dopant diffusion markers during postimplant annealing at 700,... (Read more)
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