Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
-
Nitrogen donors in 6H-, 4H- and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine... (Read more)
-
Investigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 3. Solid State Commun. 7, ii-iii (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system... (Read more)
- 4. Solid State Commun. 61, 199 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun and Qin Guo-gangA new defect, labled as Si-PK1, has been observed with EPR (Electron Paramagnetic Resonance) in neutron irradiated FZ-Si grown in argon, hydrogen and vacuum. Its symmetry has been determined to be triclinic symmetry, the lowest possible symmetry. Si-PK1 has not been observed in CZ-Si. It is not related to any common impurities in Si, like oxygen, carbon, phosphorus and boron, and it should be an intrinsic defect. Combining with the empirical classification of g tensor, it is concluded that Si-PK1 may be a multi-vacancy cluster.
- 5. Physica B 170, 155 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V.Gorelkinskii, N.N.NevinnyiA review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 ± 0.04 eV with a second-order pre-exponential factor, K0 = (1.25 ± 2.5) × 10-7 cm3/s. A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.
- 6. Phys.Rev.Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”,he electron paramagnetic resonance spectrum of float-zone silicon recorded after implantation with protons contains a strongly temperature dependent signal from a vacancy-type defect. The signal displays monoclinic-I symmetry below 65 K and trigonal symmetry above 100 K. This symmetry change, together with a hyperfine splitting from a single proton, allows an unequivocal identification with VH0, the neutral charge state of a vacancy containing a single hydrogen atom. The striking similarity between the properties of VH0 and VP0 (the E center) corroborate our identification.
- 7. J. Appl. Phys. 81, 107 (1997) , “A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon”, Jingwei XuTransient enhanced diffusion (TED) results from implantation damage creating enhanced diffusion of dopants in silicon. This phenomenon has mostly been studied using boron marker layers. We have performed an experiment using boron, phosphorus, and dislocation markers to compare TED effects. This... (Read more)
- 8. J. Appl. Phys. 81, 1180 (1997) , “Electronic defect levels in relaxed, epitaxial p-type Si1 – xGex layers produced by MeV proton irradiation”, E. V. Monakhov, A. Nylandsted Larsen, and P. KringhøjProton-irradiation-induced electronic defects in relaxed, epitaxial p-type Si1 xGex layers grown by molecular-beam epitaxy have been investigated by deep level transient spectroscopy (DLTS) for 0x0.25. Three dominating lines in the DLTS... (Read more)
- 9. J. Appl. Phys. 81, 146 (1997) , “Phase formation and stability of N + implanted SiC thin films”, R. CapellettiSilicon carbide amorphous thin films have been bombarded with 100 keV N ions. Infrared-absorption spectroscopy has been used to study the effect of increasing ion doses, up to 5 × 1017 N + cm 2, on the evolution of chemical bonding between Si, C, and N.... (Read more)
- 10. J. Appl. Phys. 81, 1645 (1997) , “Origin of infrared bands in neutron-irradiated silicon”, N. V. Sarlis, C. A. Londos, and L. G. FytrosInfrared absorption measurements were made of the localized vibrational modes due to defects produced in Czochralski-grown Si material after irradiation with fast neutrons and subsequent thermal treatments. The investigation was focused, in particular, on three satellite bands in the region of the A... (Read more)
- 11. J. Appl. Phys. 81, 1670 (1997) , “Diffusion modeling of zinc implanted into GaAs”, Michael P. Chase, Michael D. Deal, and James D. PlummerThe diffusion of implanted zinc in GaAs is studied and modeled for annealing temperatures of 625 through 850 °C. Secondary ion mass spectrometry data for the annealed profiles are presented. The substitutional interstitial diffusion (SID) mechanism is used to explain how the deviation of the... (Read more)
- 12. J. Appl. Phys. 81, 1877 (1997) , “Crystal-field splitting of Er + 3 in Si”, Shang Yuan RenTwo photoluminescent defects associated with Er + 3-doped Si are (i) a high-temperature defect (which appears after annealing at ~ 900 °C and produces five photoluminescence lines), and (ii) a low-temperature defect (which is created at lower annealing temperatures in addition to the... (Read more)
- 13. J. Appl. Phys. 81, 1929 (1997) , “Effects of microwave fields on recombination processes in 4H and 6H SiC”, N. T. Son, E. Sörman, W. M. Chen, J. P. Bergman, C. Hallin, O. Kordina, A. O. Konstantinov, B. Monemar, and E. JanzénThe effects of microwave fields on recombination processes, which are responsible for the optical detection of cyclotron resonance (ODCR) in 4H and 6H SiC epitaxial layers, have been investigated. We present experimental evidence indicating that the dominant mechanism of ODCR in SiC, at low... (Read more)
- 14. J. Appl. Phys. 81, 2173 (1997) , “Isoconcentration studies of antimony diffusion in silicon”, A. Nylandsted Larsen, P. Kringhøj, J. Lundsgaard Hansen, and S. Yu. ShiryaevThe diffusion of Sb in Si at concentrations around its solid solubility has been studied by isoconcentration experiments. The samples, grown by molecular-beam epitaxy, had constant Sb121 background dopings and a Sb123 spike embedded in this background. The diffusion was... (Read more)
- 15. J. Appl. Phys. 81, 2208 (1997) , “MeV ion implantation induced damage in relaxed Si1 – xGex”, A. Nylandsted LarsenThe damage produced by implanting, at room temperature, 3-µm-thick relaxed Si1 xGex alloys of high crystalline quality with 2 MeV Si + ions has been studied as a function of Ge content (x=0.04, 0.13, 0.24, or 0.36) and Si... (Read more)
- 16. J. Appl. Phys. 81, 2288 (1997) , “Space-charge limited conduction processes in polybenzo[c]thiophene films”, I. MusaWe present an observation of extensive space-charge limited conduction in polybenzo[c]thiophene. Strong evidence for the presence of three discrete trapping levels is shown with a possibility of a fourth trap level. The density of traps for the first three levels is found to be 5 ×... (Read more)
- 17. J. Appl. Phys. 81, 2391 (1997) , “Effect of Er dopant on the properties of In0.53Ga0.47As layers grown by liquid phase epitaxy”, S. Dhar, S. Paul, and M. MazumdarDetailed properties of In0.53Ga0.47As layers grown by liquid phase epitaxy from melts containing 0.04 and 0.1 wt % Er are reported. The carrier concentration in the material is reduced by almost two orders of magnitude as a result of Er doping. Low temperature photoluminescence... (Read more)
- 18. J. Appl. Phys. 81, 2566 (1997) , “Substitutional phosphorus doping of diamond by ion implantation”, H. Hofsäss, M. Dalmer, M. Restle, and C. RonningWe have studied the lattice sites of ion-implanted radioactive 33P in natural IIa diamond using the emission channeling technique. 33P ions were implanted at room temperature with 30 keV and a rather low dose of 1011 cm 2 and the implanted samples... (Read more)
- 19. J. Appl. Phys. 81, 260 (1997) , “Electrically active defects in as-implanted, deep buried layers in p-type silicon”, P. K. Giri, S. Dhar, V. N. Kulkarni, and Y. N. MohapatraWe have studied electrically active defects in buried layers, produced by heavy ion implantation in silicon, using both conventional deep level transient spectroscopy (DLTS) and an isothermal spectroscopic technique called time analyzed transient spectroscopy operated in constant capacitance mode... (Read more)
- 20. J. Appl. Phys. 81, 264 (1997) , “P and N compensation in diamond molecular orbital theory”, Alfred B. Anderson and Lubomir N. KostadinovCluster models and the atom superposition and electron delocalization molecular orbital theory calculations lead to an explanation for the ability of nitrogen to cause phosphorous incorporation in low pressure grown diamond films as observed recently by Cao and coworkers. The theory shows that... (Read more)
- 21. J. Appl. Phys. 81, 2904 (1997) , “Difference of interface trap passivation in Schottky contacts formed on (NH4)2Sx-treated GaAs and In0.5Ga0.5P”, C. R. Moon and Byung-Doo ChoeThe effects of (NH4)2Sx treatments on the interface traps in Au/n-GaAs and Au/n-In0.5Ga0.5P Schottky contacts are investigated by deep level transient spectroscopy measurements. The interface trap concentration in... (Read more)
- 22. J. Appl. Phys. 81, 2916 (1997) , “Positron annihilation in electron-irradiated SixGe1 – x bulk crystals”, Atsuo Kawasuso and Sohei OkadaPosition lifetime measurement for SixGe1 x bulk crystals has been performed. The bulk lifetime of positron in the crystals varied between those for Ge and Si. The dependence of the lifetime on the alloy composition showed an abrupt change at x =... (Read more)
- 23. J. Appl. Phys. 81, 3143 (1997) , “Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP”, L. Quintanilla, S. Dueñas, E. Castán, R. Pinacho, and J. BarbollaIn this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p+-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient... (Read more)
- 24. J. Appl. Phys. 81, 3151 (1997) , “Stoichiometry-dependent deep levels in p-type InP”, Jun-ichi NishizawaPhotocapacitance measurement is applied to investigate the stoichiometry-dependent deep levels in p-type InP crystals doped with Zn prepared by 4 h annealing at 700 °C under controlled phosphorus vapor pressure. Photocapacitance results reveal three dominant deep levels. A dominant deep... (Read more)
- 25. J. Appl. Phys. 81, 3170 (1997) , “Electron migration in BaFCl:Eu2+ phosphors”, Wei ChenHere we report the electron migration by photo- or thermostimulation in BaFCl:Eu2+. Electrons released from F centers may be trapped by other defect sites to form F aggregates or another type of F center and vice versa. This migration reduces the photostimulated... (Read more)
- 26. J. Appl. Phys. 81, 3446 (1997) , “Positron annihilation investigations of vacancies in InP produced by electron irradiation at room temperature”, T. Bretagnon, S. Dannefaer, and D. KerrPositron lifetime investigations were done on a series of InP samples irradiated to various doses with 2.5 MeV electrons. In n-type materials, positron lifetimes of 265 ± 5 and 338 ± 15 ps are attributed to indium vacancyinterstitial complexes and divacancyinterstitial... (Read more)
- 27. J. Appl. Phys. 81, 3453 (1997) , “Electron paramagnetic resonance study of amorphous silicon produced by Kr + ion implantation into silicon”, B. Rakvin and B. PivacA detailed analysis of the electon paramagnetic resonance line shape was performed on amorphous Si samples obtained by Kr + ion implantation. The Lorentzian character and behavior upon annealing was explained via a strong exchange interaction, leading to a cluster model for the spin... (Read more)
- 28. J. Appl. Phys. 81, 3512 (1997) , “Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs”, S. Kuisma, K. Saarinen, and P. HautojärviIn this work undoped semi-insulating (SI) GaAs grown by vertical gradient freeze and liquid encapsulated Czochralski methods was studied by near-infrared absorption (NIRA), thermally stimulated current (TSC) and positron annihilation techniques. The positron experiments reveal both gallium and... (Read more)
- 29. J. Appl. Phys. 81, 3644 (1997) , “Growth and characterization of phosphorus doped diamond films using trimethyl phosphite as the doping source”, Rajat Roychoudhury, E. J. Charlson, T. Stacy, M. Hajsaid, E. M. Charlson, and J. M. MeesePhosphorus doped polycrystalline diamond films were grown by hot-filament chemical vapor deposition using trimethyl phosphite as the doping source. Phosphorus incorporation into the diamond films was established using secondary ion mass spectroscopy. Currentvoltage characteristics were... (Read more)
- 30. J. Appl. Phys. 81, 524 (1997) , “Neutron transmutation doping as an experimental probe for CuZn in ZnSe”, E. D. Wheeler and Jack L. BooneNuclear transmutation is employed in an investigation of copper doping in ZnSe. Copper atoms are introduced at zinc sites in ZnSe after crystal growth processes are complete. Since the copper dopants are introduced after growth, far from equilibrium, they are less able to form complexes with other... (Read more)
- 31. J. Appl. Phys. 81, 6056 (1997) , “Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures”, U. Egger, M. Schultz, P. Werner, O. Breitenstein, T. Y. Tan, and U. GöseleInterdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs... (Read more)
- 32. J. Appl. Phys. 81, 6200 (1997) , “Trapping centres in Cl-doped GaSe single crystals”, G. Micocci, A. Serra, and A. TeporeThermally stimulated current (TSC) and photoconductivity were studied as a function of temperature and light intensity in an n-GaSe single crystal doped with chlorine. TSC measurements were performed in the range 80450 K, and the results were analyzed by different methods. An electron... (Read more)
- 33. J. Appl. Phys. 81, 6205 (1997) , “Electrical and photoluminescence properties of CuInSe2 single crystals”, J. H. Schön, E. Arushanov, Ch. Kloc, and E. BucherElectrical and photoluminescence measurements have been carried out on CuInSe2 single crystals. The observed temperature dependence of the Hall coefficient in n-type CuInSe2 single crystals is explained in assuming the existence of an impurity band. The values of the... (Read more)
- 34. J. Appl. Phys. 81, 631 (1997) , “A predictive model for transient enhanced diffusion based on evolution of {311} defects”, Alp H. Gencer and Scott T. DunhamIt has been observed that {311} defects form, grow, and eventually dissolve during annealing of Si-implanted silicon wafers. The fact that for subamorphizing silicon implants {311} defects initially contain the full net dose of excess interstitials, and that the time scale for dissolution of these... (Read more)
- 35. J. Appl. Phys. 81, 6635 (1997) , “Phosphorus and boron implantation in 6H–SiC”, Mulpuri V. Rao and Jason A. GardnerPhosphorus and boron ion implantations were performed at various energies in the 50 keV4 MeV range. Range statistics of P + and B + were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature... (Read more)
- 36. J. Appl. Phys. 81, 6651 (1997) , “Neutron irradiation defects in gallium sulfide: Optical absorption measurements”, F. J. Manjón, A. Segura, and V. MuñozGallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their... (Read more)
- 37. J. Appl. Phys. 81, 6767 (1997) , “Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germanium”, A. Blondeel and P. ClauwsDeep levels in n-type high-purity (HP) detector grade germanium are studied using optical deep level transient spectroscopy (ODLTS). In this technique, optical injection (using light of above band gap energy) from the back ohmic contact together with a suitable sample configuration results in... (Read more)
- 38. J. Appl. Phys. 81, 6822 (1997) , “A model of hole trapping in SiO2 films on silicon”, P. M. LenahanWe demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers. ©1997 American Institute of Physics.... (Read more)
- 39. J. Appl. Phys. 81, 6948 (1997) , “Optical properties of α-irradiated and annealed Si-doped GaAs”, H. W. Kunert and D. J. BrinkThe influence of irradiation by α particles and subsequent isochronal annealing on n-GaAs doped with silicon, was investigated. Photoluminescence (PL) studies revealed the formation of an induced radiation center at 1.486 eV. In addition to the PL investigation we also employed... (Read more)
- 40. J. Appl. Phys. 81, 7295 (1997) , “Structures and defects in arsenic-ion-implanted GaAs films annealed at high temperatures”, Wen-Chung Chen and C.-S. ChangThe structures and defects are studied in arsenic-ion-implanted GaAs(As + GaAs) films annealed at temperatures higher than 600 °C by using transmission electron microscopy, deep level transient spectroscopy, temperature-dependent conductance, and photoluminescence. The estimated... (Read more)
- 41. J. Appl. Phys. 81, 7362 (1997) , “Interface states in In0.5Ga0.5P/AlxGa1 – xAs heterostructures grown by liquid phase epitaxy”, Yong-Hoon Cho and Byung-Doo ChoeWe report the observation of deep traps localized near the heterointerface of the InGaP/AlGaAs structure grown by liquid-phase epitaxy. In the case of low-quality InGaP/AlGaAs heterojunctions containing interface traps, the shape of capacitance-voltage (C-V) carrier profiles is affected by... (Read more)
- 42. J. Appl. Phys. 81, 7533 (1997) , “Broad photoluminescence band in undoped AlxGa1 – xAs grown by organometallic vapor phase epitaxy”, H. Kakinuma and M. AkiyamaWe have studied the 77 K photoluminescence (PL) of undoped-AlxGa1 xAs (0.21x0.83) grown by organometallic vapor phase epitaxy. A deep broad (DB) PL band is found at 1.61.7 eV at a range of x from 0.21 to 0.63, with a maximum intensity at... (Read more)
- 43. J. Appl. Phys. 81, 7567 (1997) , “Effect of the carbon acceptor concentration on the photoquenching and following enhancement of the photoacoustic signals of semi-insulating GaAs”, A. Fukuyama, Y. Morooka, Y. Akashi, K. Yoshino, K. Maeda, and T. IkariThe spectral and the time dependent piezoelectric photoacoustic (PPA) measurements under the continuous light illumination were carried out at 85 K to investigate nonradiative recombination processes involving EL2 defect levels in carbon concentration controlled and not intentionally doped... (Read more)
- 44. J. Appl. Phys. 81, 7604 (1997) , “Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production”, R. Fornari, A. Zappettini, E. Gombia, and R. MoscaAs-grown Fe-doped semiconducting InP wafers (residual carrier concentration 1015 cm3, estimated iron concentration 58 × 1015 cm3) were converted to semi-insulating, with high resistivity and good mobility, when annealed under... (Read more)
- 45. J. Appl. Phys. 81, 7612 (1997) , “Passivation, structural modification, and etching of amorphous silicon in hydrogen plasmas”, S. A. McQuaid, S. Holgado, J. Garrido, J. Martínez, and J. PiquerasAtomic hydrogen from plasma discharges dissolves in silicon previously amorphized by ion implantation (aSi) in the form of SiH bonds, giving rise to infrared (IR) absorption at ~ 1990 cm 1 and causing partial activation of implanted dopants. Passivation of aSi... (Read more)
- 46. J. Appl. Phys. 81, 78 (1997) , “Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon”, G. Z. Pan and K. N. TuA study of end-of-range (EOR) dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 was carried out by using transmission electron microscopy. Two kinds of post-implantation anneals were performed, furnace anneals at 850 °C and rapid thermal anneals at 1000 °C.... (Read more)
- 47. J. Appl. Phys. 81, 905 (1997) , “Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique”, Junyong KangThe 4.2 K photoluminescence (PL) spectra of undoped bulk 100" align="middle"> InP grown by the liquid-encapsulated vertical Bridgman (LEVB) techniques are characterized by three kinds of recombination peaks. A peak exhibited near band-gap energy is attributed to the recombination of bound... (Read more)
- 48. J. Appl. Phys. 82, 1053 (1997) , “Ion-beam annealing of electron traps in n-type Si by post-H + implantation”, A. ItoThe effects of post-H + implantation on electron traps that are induced by P + implantation (300 keV, 1 × 109 cm 2) has been studied by deep-level transient spectroscopy. H + implantation is performed at room temperature to a... (Read more)
- 49. J. Appl. Phys. 82, 120 (1997) , “Evolution from point to extended defects in ion implanted silicon”, J. L. Benton, S. Libertino, P. Kringhøj, D. J. Eaglesham, and J. M. PoateWe present a quantitative study of the evolution of point defects into clusters and extended defects in ion-implanted Si. Deep level transient spectroscopy (DLTS) measurements are used to identify and count the electrically active defects in the damaged region produced by Si ion implantation at... (Read more)
- 50. J. Appl. Phys. 82, 1208 (1997) , “Carbon-related defects in carbon-doped GaAs by high-temperature annealing”, Hiroshi Fushimi and Kazumi WadaThe behavior of defects in heavily carbon-doped GaAs induced by high-temperature annealing has systematically been studied. It is found that carbon-related defects decrease hole concentration and mobility, carbon concentration on the As sublattices and recombination lifetime, in terms of... (Read more)
- 51. J. Appl. Phys. 82, 137 (1997) , “The infrared vibrational absorption spectrum of the Si–X defect present in heavily Si doped GaAs”, M. J. Ashwin and R. C. NewmanHeavily silicon doped GaAs grown by molecular beam epitaxy using a single gallium isotope source (69Ga) has been studied by infrared absorption to reveal localized vibrational modes (LVMs) of Si complexes. The structure observed close to 367 cm 1 is the same as that... (Read more)
- 52. J. Appl. Phys. 82, 1423 (1997) , “Deep level transient spectroscopy of CdS/CdTe thin film solar cells”, M. A. LourençoDeep levels in polycrystalline n-CdS/p-CdTe photovoltaic structures have been studied by deep level transient spectroscopy (DLTS). The results were obtained from cells which have undergone different post-deposition treatment (as-deposited, heat treated, and heat treated in the presence... (Read more)
- 53. J. Appl. Phys. 82, 1696 (1997) , “A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching”, L. Goubert, R. L. Van Meirhaeghe, P. Clauws, F. Cardon, and P. Van DaeleThe electrical effects of reactive ion etching (RIE) of p-InP by CH4:H2 are investigated. By using optical deep-level transient spectroscopy, several deep-level defects could be detected. The main defect (E3) is found to be a donor with an energy level at... (Read more)
- 54. J. Appl. Phys. 82, 1812 (1997) , “Atomic level stress and light emission of Ce activated SrS thin films”, W. L. Warren, K. Vanheusden, D. R. Tallant, and C. H. SeagerWe find that the Ce3 + ion in polycrystalline sputtered SrS:Ce thin films resides in a distorted octahedral environment, as opposed to the cubic host environment. Using electron paramagnetic resonance and x-ray diffraction analysis, we show that the degree of axial distortion is related... (Read more)
- 55. J. Appl. Phys. 82, 192 (1997) , “Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal”, Amlan MajumdarThe reactivation kinetics of passivated boron acceptors in hydrogenated silicon during zero bias annealing in the temperature range of 65130 °C are reported. For large annealing times and high annealing temperatures, the reactivation process follows second-order kinetics and is rate... (Read more)
- 56. J. Appl. Phys. 82, 1970 (1997) , “Off-axis extra lines in powder pattern electron paramagnetic resonance of Cr3 + in YAlO3”, R. R. Rakhimov, A. L. Wilkerson, G. B. Loutts, and H. R. RiesPowder sample electron paramagnetic resonance (EPR) spectrum of Cr3 + ions in YAlO3 crystals contains off-axis extra lines, which do not belong to the principal X, Y,and Z components of the fine structure. Orientation dependence of the EPR spectrum of... (Read more)
- 57. J. Appl. Phys. 82, 210 (1997) , “Defects in metamorphic InxAl1 – xAs (x < 0.4) epilayers grown on GaAs substrates”, Jia-Lin Shieh, Mao-Nan Chang, Yung-Shih Cheng, and Jen-Inn ChyiDefects in Si-doped InxAl1 xAs (0 < x < 0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1... (Read more)
- 58. J. Appl. Phys. 82, 2156 (1997) , “Minority-carrier lifetime damage coefficient of irradiated InP”, B. M. Keyes and R. K. AhrenkielMinority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5 × 1015 and 1.3 × 1017 cm 3) and p-type (2.5 × 1017 cm 3) InP have... (Read more)
- 59. J. Appl. Phys. 82, 2365 (1997) , “Electrical properties of n-GaSe single crystals doped with chlorine”, G. Micocci, A. Serra, and A. TeporeHall-effect and space-charge-limited-current (SCLC) measurements were performed on Cl-doped GaSe single crystals grown by the BridgmannStockbarger method. The temperature dependence of the free electron density shows the characteristics of a partially compensated n-type semiconductor.... (Read more)
- 60. J. Appl. Phys. 82, 2476 (1997) , “Electron nuclear double resonance of stable Rh centers in solution-grown NaCl single crystals”, M. Zdravkova, H. Vrielinck, F. Callens, and E. BoesmanUnlike the photographically important silver halides, large NaCl single crystals can be grown from solution. In such NaCl crystals, with doping comparable to practical AgCl and AgBr microcrystals, three stable Rh centers were detected and studied by electron paramagnetic resonance (EPR) and electron... (Read more)
- 61. J. Appl. Phys. 82, 2603 (1997) , “Electromodulation reflectance of low temperature grown GaAs”, T. M. Hsu, J. W. Sung, and W. C. LeeWe have studied low temperature grown GaAs by electromodulation reflectance spectroscopy for growth temperatures between 200 and 320 °C. The reflectance spectra can be observed only when the concentration of the arsenic antisite defect is lower than 3.4 × 1019 cm ... (Read more)
- 62. J. Appl. Phys. 82, 2969 (1997) , “Properties of electron traps in In1 – xGaxAsyP1 – y grown on GaAs0.61P0.39”, Ho Ki Kwon and Byung-Doo ChoeThe properties of electron traps in nominally undoped In1 xGaxAsyP1 y layers grown on GaAs0.61P0.39 substrates by liquid phase epitaxy were investigated by deep level transient spectroscopy... (Read more)
- 63. J. Appl. Phys. 82, 3125 (1997) , “The potential formation of O2 - " align="middle"> on an oxidizing porous silicon surface a source of oxygen atoms”, James L. Gole and Frank P. DudelEvidence is presented for the formation of O2 - " align="middle"> on a porous silicon surface. The O2 - " align="middle"> present on a porous silicon surface may contribute to the infrared spectrum of air oxidized surfaces in the range encompassing ~ 11001150... (Read more)
- 64. J. Appl. Phys. 82, 3152 (1997) , “The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals”, K. Kamitani, M. Grimsditch, J. C. Nipko, and C.-K. LoongThe complete sets of elastic constants of 4H and 6H silicon carbide single crystals were determined by Brillouin scattering. The elastic constants of 6H SiC are C11 = 501 ± 4, C33 = 553 ± 4, C44 = 163 ± 4, C12 =... (Read more)
- 65. J. Appl. Phys. 82, 3232 (1997) , “Vacancy production by 3 MeV electron irradiation in 6H-SiC studied by positron lifetime spectroscopy”, Atsuo Kawasuso, Hisayoshi Itoh, Takeshi Ohshima, Koji Abe, and Sohei OkadaThe vacancy production in 6H-SiC by 3 MeV electron irradiation at room temperature was studied using positron lifetime spectroscopy combined with annealing experiments. It was found that the trapping rates of positrons in vacancies increased linearly with the fluence in the initial stage of... (Read more)
- 66. J. Appl. Phys. 82, 3346 (1997) , “The EL2-like metastable defect and the n- to p-type transition in silicon planar-doped GaAs”, M. I. N. da Silva, A. G. de Oliveira, G. M. Ribeiro, R. M. Rubinger, J. A. Corrêa, and M. V. Baeta MoreiraThrough photo-Hall measurements at temperatures below about 120 K, we have observed the presence of a deep donor defect, with characteristics similar to those of the EL2 center, in planar-doped GaAs samples grown by molecular beam epitaxy at 300 °C. We have shown that this EL2-like center can... (Read more)
- 67. J. Appl. Phys. 82, 3630 (1997) , “Addendum: Deep emission band at GaInP/GaAs interface”, S. H. Kwok and P. Y. YuWe have performed high pressure photoluminescence studies of the deep emission band in GaInP/GaAs quantum well. Our results suggest that this peak is related to donor-acceptor pair transitions in the GaAs well. ©1997 American Institute of Physics.... (Read more)
- 68. J. Appl. Phys. 82, 3791 (1997) , “Hydrogen migration in diamond-like carbon films”, E. Vainonen, J. Likonen, T. Ahlgren, P. Haussalo, and J. KeinonenProperties of physical vapor deposited diamondlike carbon (DLC) films and the migration of hydrogen in H + and 4He + ion implanted and hydrogen co-deposited DLC films have been studied. Measurements utilizing Rutherford backscattering spectrometry showed that the... (Read more)
- 69. J. Appl. Phys. 82, 3828 (1997) , “Deep level of iron-hydrogen complex in silicon”, T. Sadoh, K. Tsukamoto, A. Baba, D. Bai, A. Kenjo, and T. TsurushimaDeep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of EV + 0.31 and EV + 0.41 eV. The trap of... (Read more)
- 70. J. Appl. Phys. 82, 4124 (1997) , “Detection of the metastable state of the EL2 defect in GaAs”, J. C. Bourgoin and T. NeffatiUsing a classical photocapacitance technique, we have transformed the well-known EL2 defects, related to the As antisite in GaAs, into their metastable states. Using the capacitance, we have monitored the temperature dependence of the electron occupancy of these metastable states at thermal... (Read more)
- 71. J. Appl. Phys. 82, 419 (1997) , “Red luminescence in phosphorous-doped chemically vapor deposited diamond”, J. te Nijenhuis, S. M. Olsthoorn, W. J. P. van Enckevort, and L. J. GilingLuminescence studies have been performed on phosphorous-doped diamond films deposited by hot-filament chemical vapor deposition. A broad luminescence band, centered around 1.9 eV is revealed, in the cathodo luminescence spectra of homoepitaxial and polycrystalline films, whereas the blue... (Read more)
- 72. J. Appl. Phys. 82, 4223 (1997) , “Compensation implants in 6H–SiC”, Andrew Edwards, Deborah N. Dwight, and Mulpuri V. RaoIn this work, we have performed Si and C isoelectronic implantations in n-type and vanadium (V) implantations in p-type 6HSiC to obtain highly resistive regions. The compensation is achieved by the lattice damage created by the Si and C implantations and the chemically... (Read more)
- 73. J. Appl. Phys. 82, 4236 (1997) , “Investigation of the x-ray storage phosphors Cs2NaYF6:Pr3 + or Ce3 + ”, Th. Pawlik and J.-M. SpaethWe present Cs2NaYF6:Ce3 + or Pr3 + as new x-ray storage phosphors. The radiation damage centers upon x irradiation were investigated using magneto-optical and magnetic resonance spectroscopy. F centers are the photostimulable electron trap centers. For... (Read more)
- 74. J. Appl. Phys. 82, 4408 (1997) , “Electrical properties of silicon and beryllium doped (AlyGa1 – y)0.52In0.48P”, Stephen P. Najda, Alistair Kean, and Geoffrey DugganThe electrical properties of silicon and beryllium doped (AlyGa1 y)0.52In0.48P grown by gas source molecular beam epitaxy were studied. Unintentionally doped (GaIn)P has a n-type background concentration of 5.1 ×... (Read more)
- 75. J. Appl. Phys. 82, 4412 (1997) , “Deep electron states in n-type Al-doped ZnS1 – xTex grown by molecular beam epitaxy”, Liwu Lu, Weikun Ge, I. K. Sou, Y. Wang, J. Wang, Z. H. Ma, W. S. Chen, and G. K. L. WongCapacitancevoltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1 xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the... (Read more)
- 76. J. Appl. Phys. 82, 4457 (1997) , “4f-shell configuration of Yb in InP studied by electron spin resonance”, T. Ishiyama and K. MurakamiWe have performed electron spin resonance (ESR) measurements on Yb-doped n-type and p-type InP layers epitaxially grown by metalorganic chemical vapor deposition. ESR spectra of Yb3 + (4f13) were observed in both n-type and p-type samples.... (Read more)
- 77. J. Appl. Phys. 82, 4945 (1997) , “Hydrogen-oxygen-vacancy complexes in Czochralski-grown silicon crystal”, H. Hatakeyama and M. SuezawaWe studied the process of generation and some properties of shallow donors generated by annealing a hydrogen-doped Czochralski-grown silicon crystal after electron irradiation. Hydrogen was doped by annealing specimens at 1200 °C in hydrogen atmosphere followed by quenching. Specimens were... (Read more)
- 78. J. Appl. Phys. 82, 4994 (1997) , “Optical and electrical characterization of nitrogen ion implanted ZnSSe/p-GaAs (100)”, H. Hong, W. A. Anderson, J. Haetty, A. Petrou, E. H. Lee, H. C. Chang, M. H. Na, H. Luo, J. Peck, and T. J. MountziarisNitrogen ions were implanted into ZnSxSe1 x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a... (Read more)
- 79. J. Appl. Phys. 82, 5138 (1997) , “Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices”, W. L. Warren and C. H. SeagerTransmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly... (Read more)
- 80. J. Appl. Phys. 82, 5144 (1997) , “Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer”, A. D. Lan, B. X. Liu, and X. D. BaiThe SiO2 layers thermally grown on Si wafers were implanted by 130 keV Si ions at liquid nitrogen temperature to a dose of 1 × 1017 ions/cm2. From the as-implanted samples, a visible photoluminescence band centered around 2.0 eV was observed. After... (Read more)
- 81. J. Appl. Phys. 82, 5167 (1997) , “p–n and p–n–p junction arrays in CuInSe2 crystals: Cathodoluminescence and capacitance study”, G. A. Medvedkin, M. M. Sobolev, and S. A. SolovjevMicrostructures in p-CuInSe2 single crystals tailored by a strong electric field have been studied using the methods of local cathodoluminescence, electron-beam-induced current (EBIC), capacitancevoltage (CV) characteristics, and deep-level transient... (Read more)
- 82. J. Appl. Phys. 82, 5185 (1997) , “Harnessing reverse annealing phenomenon for shallow p-n junction formation”, L. Y. Krasnobaev and J. J. CuomoMonocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which... (Read more)
- 83. J. Appl. Phys. 82, 5327 (1997) , “Nitrogen and aluminum implantation in high resistivity silicon carbide”, Deborah Dwight and Mulpuri V. RaoIn this article, the results on N and Al implantations into undoped high-resistance and vanadium doped semi-insulating bulk 6H-SiC are reported for the first time. The N implants were performed at 700 °C and the Al implants at 800 °C to create n- and p-type layers,... (Read more)
- 84. J. Appl. Phys. 82, 5339 (1997) , “Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing”, Hisayoshi Itoh, Takeshi Ohshima, Yasushi Aoki, Koji Abe, Masahito Yoshikawa, and Isamu NashiyamaDefects introduced in epitaxially grown cubic silicon carbide (3C-SiC) by implantation of nitrogen (N2 + " align="middle">) and aluminum ions (Al + ) at a wide temperature range from room temperature to 1200 °C were studied using electron spin resonance (ESR),... (Read more)
- 85. J. Appl. Phys. 82, 5526 (1997) , “The effect of an asymmetric band of localized deep donors on the electronic transport of high-purity n-type InP”, R. BenzaquenWe have investigated the effect of the shape of a band of localized deep donors on the electronic transport of three high-purity n-type InP epilayers. A model accounting for a broad asymmetric band of localized deep donors or complexes of unknown origin, centered 167 meV below the conduction... (Read more)
- 86. J. Appl. Phys. 82, 5758 (1997) , “Radiation induced formation of color centers in PbWO4 single crystals”, M. Nikl and K. NitschThe changes in the absorption spectra induced by Co60 irradiation and high temperature annealing was studied for selected PbWO4 crystals. Based on radiation and annealings induced absorption spectra, four color centers are proposed, which could be responsible for shaping the... (Read more)
- 87. J. Appl. Phys. 82, 609 (1997) , “Study of damage induced by room-temperature Al ion implantation in Hg0.8Cd0.2Te by x-ray diffuse scattering”, P. O. Renault, A. Declémy, P. Lévêque, and C. FayouxIon-implantation is a widely used doping technique in IIVI semiconductors. Nevertheless, ion-implantation damage has to be better understood to properly control this process. In order to investigate the implantation-induced defects in such compounds, room-temperature implantations of 320 keV... (Read more)
- 88. J. Appl. Phys. 82, 6346 (1997) , “Hydrogen passivation of nitrogen in 6H–SiC”, B. TheysN-doped 6HSiC wafers have been annealed in hot hydrogen for two doping levels, corresponding to n- (n ~ 1017 cm 3) and n+-type (n ~ 1019 cm 3) material. Electron spin resonance shows little... (Read more)
- 89. J. Appl. Phys. 82, 688 (1997) , “Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature”, P. M. Mooney, L. Tilly, C. P. D'Emic, J. O. Chu, F. Cardone, F. K. LeGoues, and B. S. MeyersonTwo shallow hole traps dominate the deep level transient spectroscopy (DLTS) data for strain-relaxed Si0.7Ge0.3 layers grown on Si(100) by ultrahigh vacuum chemical vapor deposition at temperatures 560 °C. The trap energy levels are at Ev + 0.06 and... (Read more)
- 90. J. Appl. Phys. 82, 813 (1997) , “Configurational transformation of an Er center in GaAs:Er,O under hydrostatic pressure”, R. A. Hogg, K. Takahei, and A. TaguchiAn optical spectroscopic study of Er-related luminescence in GaAs:Er,O under hydrostatic pressure is reported. The application of pressure results in new Er-related centers becoming optically active under host photoexcitation. Two new sets of 4I13/2"... (Read more)
- 91. J. Appl. Phys. 82, 899 (1997) , “Persistent photoconductivity in n-type GaN”, H. M. Chen and Y. F. ChenResults of photoconductivity measurements in undoped n-type and Se-doped GaN epitaxial thin films are presented. Similar to the photoluminescence spectra, the photoconductivity also shows a broad yellow band centered around 2.2 eV. It is found that persistent photoconductivity (PPC) does... (Read more)
- 92. Appl. Phys. Lett. 70, 1014 (1997) , “Low temperature photoluminescence measurements on boron- and hydrogen-implanted 6H–SiC”, C. Peppermüller and R. HelbigWe investigated the low temperature (T < 2 K) photoluminescence (LTPL) emission of 6HSiC samples after implantation of either boron or boron together with hydrogen. After implantation of boron and annealing at 1700 °C, we detected new LTPL emission at 4205 Å. After... (Read more)
- 93. Appl. Phys. Lett. 70, 1146 (1997) , “Effects of phosphorus doping on boron transient enhanced diffusion in silicon”, M. B. Huang, T. W. Simpson, and I. V. MitchellThe effects of phosphorus predoping on transient enhanced diffusion (TED) of boron, ion implanted into silicon, were studied using secondary ion mass spectroscopy (SIMS). Boron ions of 40 keV energy were implanted to a dose of 3 × 1014 cm2 into Si(100), which had... (Read more)
- 94. Appl. Phys. Lett. 70, 1272 (1997) , “Paramagnetic susceptibility of semiconducting CdF2:In crystals: Direct evidence of the negative-U nature of the DX-like center”, S. A. Kazanskii and A. I. RyskinParamagnetic susceptibility κpara of CdF2 crystals with bistable In centers is measured in the temperature range T=4300 K. For crystals cooled in the dark down to liquid helium temperature, κpara is determined by the trace Mn2 + ... (Read more)
- 95. Appl. Phys. Lett. 70, 1390 (1997) , “Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates”, Q.-Y. Tong, K. Gutjahr, S. Hopfe, and U. GöseleSi, Ge, SiC, and diamond samples were implanted with H2+" align="middle"> at 120160 keV with 5.0 × 1016 ions/cm2 (corresponding to 1.0 × 1017 H+ ions/cm2) and annealed at various temperatures to introduce... (Read more)
- 96. Appl. Phys. Lett. 70, 1572 (1997) , “Spatial variations in oxygen precipitation in silicon after high temperature rapid thermal annealing”, M. Pagani, R. J. Falster, G. R. Fisher, G. C. Ferrero, and M. OlmoSpatial variations of oxygen precipitation have been studied in silicon wafers submitted to rapid thermal annealing (RTA) in nitrogen ambients at a temperature above 1150 °C prior to a two-step precipitation treatment. The samples submitted to high temperature preannealing show a consistent... (Read more)
- 97. Appl. Phys. Lett. 70, 1584 (1997) , “New interpretation of the dominant recombination center in platinum doped silicon”, J.-U. Sachse, E. Ö. Sveinbjörnsson, W. Jost, and J. WeberThe midgap level in platinum doped n-type silicon, which was proposed to be the dominant recombination center, is identified as a platinum-hydrogen complex. Hydrogenation of the samples is achieved by wet-chemical etching at room temperature. Defect profiles, determined by deep level... (Read more)
- 98. Appl. Phys. Lett. 70, 1659 (1997) , “Stimulated far-infrared emission from copper-doped germanium crystals”, G. SirmainWe have detected stimulated far-infrared emission from copper-doped germanium single crystals. By varying the magnetic field between 1 and 2.3 T, we have achieved emission in the range of 70120 cm 1. Laser action was observed for crystals with a copper acceptor concentration... (Read more)
- 99. Appl. Phys. Lett. 70, 1724 (1997) , “Compensating defects in heavily nitrogen-doped zinc selenide: A photoluminescence study”, M. Moldovan, S. D. Setzler, T. H. Myers, L. E. Halliburton, and N. C. GilesPhotoluminescence (PL) from a heavily nitrogen-doped ZnSe epilayer grown by molecular beam epitaxy was studied as a function of excitation wavelength, power density, and temperature. Also, the time decay of the PL emission was measured. Detailed analysis of the PL data indicates that the deep broad... (Read more)
- 100. Appl. Phys. Lett. 70, 176 (1997) , “Damage evolution and surface defect segregation in low-energy ion-implanted silicon”, P. J. Bedrossian, M.-J. Caturla, and T. Diaz de la RubiaWe have combined computer simulations and atomic-resolution tunneling microscopy to investigate the kinetics of defect migration during annealing of ion implanted Si(111)-7 × 7. Using atomically-clean and flat surfaces as sinks for bulk point defects introduced by the irradiation, we observe... (Read more)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)