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- 701. Appl. Phys. Lett. 77, 2867 (2000) , “Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells”, F. Hegeler and M. O. ManasrehIntersubband transitions in 1 MeV proton-irradiated GaAs/AlGaAs multiple quantum wells were studied using an optical absorption technique and isochronal thermal annealing. The intersubband transitions were completely depleted in samples irradiated with doses as low as 4×1014... (Read more)
- 702. Appl. Phys. Lett. 77, 241 (2000) , “Dominant iron gettering mechanism in p/p+ silicon wafers”, Wen LinFe gettering mechanisms in p/p+ epitaxial Si were investigated under controlled contamination and annealing cycles. The dominant Fe gettering mechanism is the Fermi level controlled coulomb attraction between Fe + and B in the... (Read more)
- 703. Appl. Phys. Lett. 77, 2325 (2000) , “Mechanism for rapid thermal annealing improvements in undoped GaNxAs1–x/GaAs structures grown by molecular beam epitaxy”, I. A. Buyanova, G. Pozina, P. N. Hai, N. Q. Thinh, J. P. Bergman, and W. M. ChenA systematic investigation of the effect of rapid thermal annealing (RTA) on optical properties of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the observed dramatic improvement in the quality of the GaNxAs1x/GaAs... (Read more)
- 704. Appl. Phys. Lett. 77, 226 (2000) , “Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond”, V. Heera, F. Fontaine, and W. SkorupaNatural IIa diamond was implanted at 90 keV to 1×1015 N + /cm2 and subsequently at 150 keV to 3×1017 Si + /cm2 at a temperature of 900 °C. The structure of the implanted diamond region was investigated by... (Read more)
- 705. Appl. Phys. Lett. 77, 2154 (2000) , “Lattice location of erbium in high-fluence implanted silicon–germanium: Backscattering/channeling study”, V. S. Touboltsev and J. RäisänenHigh-quality crystalline Si0.75Ge0.25 alloy crystals were implanted with 70 keV Er + ions at 550 °C to a fluence of 1019 m2. In situ Rutherford backscattering/channeling spectrometry with a 500 keV He2 + beam... (Read more)
- 706. Appl. Phys. Lett. 77, 2142 (2000) , “Lattice location of implanted Cu in highly doped Si”, U. Wahl, A. Vantomme, and G. LangoucheWe report on the lattice location of ion-implanted 67Cu in p+- and n+-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both p+- and... (Read more)
- 707. Appl. Phys. Lett. 77, 2054 (2000) , “Study on electron trapping and interface states of various gate dielectric materials in 4H–SiC metal-oxide-semiconductor capacitors”, Won-ju Cho, Ryoji Kosugi, Junji Senzaki, Kenji Fukuda, and Kazuo AraiThe characteristics of electron trapping and interface states for various gate dielectrics formed on the 4HSiC metal-oxide-semiconductor capacitors have been studied. Thermal gate oxides prepared by dry oxidation (in pure O2) or wet oxidation (in H2:O2 = 1:2),... (Read more)
- 708. Appl. Phys. Lett. 77, 1997 (2000) , “Athermal annealing of phosphorus-ion-implanted silicon”, J. Grun and R. P. FischerA 1 cm2 area in phosphorus-implanted silicon samples is annealed by irradiation of a much smaller 0.002 cm2 area with a single laser pulse. Resistivity of the annealed region is uniform and similar to that measured after thermal annealing. Electrically activated donors did not... (Read more)
- 709. Appl. Phys. Lett. 77, 1499 (2000) , “Hydrogen passivation of deep levels in n–GaN”, A. Hierro and S. A. RingelDifferential postgrowth hydrogen passivation of deep levels in nGaN grown by metal-organic chemical vapor deposition has been directly observed by means of both deep level transient spectroscopy and deep level optical spectroscopy. Two deep levels found at... (Read more)
- 710. Appl. Phys. Lett. 77, 1469 (2000) , “Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) Si”, A. Stesmans and V. V. Afanas'evElectron-spin-resonance monitoring of Si dangling-bond-type interface defects is used to study ultrathin (~20 Å) Si-oxide films grown by vacuum ultraviolet (VUV)-enhanced oxidation of Si at 300 K. Large densities (up to ~9×1012 cm2) of... (Read more)
- 711. Appl. Phys. Lett. 77, 1381 (2000) , “Charge trapping in very thin high-permittivity gate dielectric layers”, M. Houssa and A. StesmansThe trapping of charge carriers in very thin SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks during constant gate voltage stress of metaloxidesemiconductor capacitors has been investigated. The increase of the gate current density... (Read more)
- 712. Appl. Phys. Lett. 77, 1348 (2000) , “Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers”, G. Neu and M. TeisseireShallow donors in GaN epilayers grown by metalorganic chemical vapor deposition on sapphire and GaN substrates have been studied by selectively excited photoluminescence (SPL) and by far-infrared (FIR) spectroscopy. A comparison of FIR and SPL results reveals a small splitting between the 2s... (Read more)
- 713. Appl. Phys. Lett. 77, 1215 (2000) , “Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H–SiC metal–oxide–semiconductor capacitors”, Won-ju Cho, Ryoji Kosugi, Kenji Fukuda, and Kazuo AraiThe effect of hydrogen postoxidation annealing (POA) on the reliability of gate oxide formed in 4HSiC metaloxidesemiconductor (MOS) capacitors has been investigated. Argon POA at 1200 °C and hydrogen POA were carried out over a temperature range of 4001000 °C to... (Read more)
- 714. Appl. Phys. Lett. 77, 112 (2000) , “Energy dependence of transient enhanced diffusion and defect kinetics”, Hugo Saleh and Mark E. LawBoron, a p-type dopant, experiences transient enhanced diffusion (TED) via interstitials. The boron TED and {311} dissolution rates are explored as a function of implant energy dependence. Silicon implants of 1014/cm2 at various energies were used to damage the surface... (Read more)
- 715. Appl. Phys. Lett. 76, 855 (2000) , “Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon”, G. Mannino, N. E. B. Cowern, F. Roozeboom, and J. G. M. van BerkumWe investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage annealing. The BICs are "fabricated" in a narrow band by overlapping the Si implant damage tail with a lightly doped... (Read more)
- 716. Appl. Phys. Lett. 76, 840 (2000) , “Time-resolved study of yellow and blue luminescence in Si- and Mg-doped GaN”, Yong-Hwan Kwon, S. K. Shee, G. H. Gainer, G. H. Park, S. J. Hwang, and J. J. SongTime-resolved photoluminescence has been employed to study the donor-acceptor pair recombination kinetics of the yellow (~2.3 eV) and blue (~2.8 eV) luminescence bands in Si- and Mg-doped GaN layers, respectively. As the Si doping concentration in Si-doped GaN increases, the lifetime... (Read more)
- 717. Appl. Phys. Lett. 76, 757 (2000) , “Is sulfur a donor in diamond?”, R. Kalish, A. Reznik, C. Uzan-Saguy, and C. CytermannHomoepitaxial diamond layers grown by chemical-vapor deposition in the presence of H2S, which were published to exhibit n-type conductivity, are carefully analyzed both electrically and structurally. Hall-effect measurements as a function of temperature clearly show the samples to... (Read more)
- 718. Appl. Phys. Lett. 76, 697 (2000) , “Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment”, O. F. Vyvenko, O. Krüger, and M. KittlerCross-sectional and temperature-dependent measurements of the electron-beam-induced current reveal the depth profile of the recombination activity of grain boundaries and intragrain dislocations in cast multicrystalline Si. After remote hydrogen plasma treatment for 1 h at 310 °C, defects are... (Read more)
- 719. Appl. Phys. Lett. 76, 574 (2000) , “Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation”, Jian-Yue Jin and Jiarui LiuWe have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (Bn-" align="middle">, n = 13) ion implantation with the same atomic boron dose and energy. This Bn-" align="middle">... (Read more)
- 720. Appl. Phys. Lett. 76, 499 (2000) , “First principles study of Pb vacancies in PbTiO3”, S. Pöykkö and D. J. ChadiElectronic and ionic structures of lead vacancies in PbTiO3 were studied using an ab initio approach. Even though the lead vacancy is found to be an acceptor with stable charge states ranging from 2- to 4- it does not form a tightly bound defect pair with a double donor oxygen... (Read more)
- 721. Appl. Phys. Lett. 76, 3718 (2000) , “Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si”, Hiroyuki Kageshima and Akihito TaguchiThe nitrogen-doping effect on vacancy aggregation in Si is studied by comparing total energies of various complexes of nitrogen atoms and Si vacancies in terms of first-principles calculations. Two nitrogen atoms are found to form a stable complex with two Si vacancies, strongly suggesting that a... (Read more)
- 722. Appl. Phys. Lett. 76, 3421 (2000) , “Characterization of threading dislocations in GaN epitaxial layers”, T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. IkedaWe investigated Si-doped GaN epitaxial layers on a (0001)-sapphire substrate using a HCl vapor-phase etching technique, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Three kinds of distinctive etch pits correspond to three different types of threading... (Read more)
- 723. Appl. Phys. Lett. 76, 3385 (2000) , “Nickel-platinum alloy monosilicidation-induced defects in n-type silicon”, D. Z. Chi, D. Mangelinck, J. Y. Dai, and S. K. LahiriElectrically active defects induced by the formation of nickelplatinum alloy monosilicide (formed at 600800 °C) has been studied in n-type silicon using deep level transient spectroscopy and transmission electron microscopy measurements. A Ni-related electron trap level at... (Read more)
- 724. Appl. Phys. Lett. 76, 3109 (2000) , “The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si–SiO2 interface”, K. VanheusdenIt is demonstrated that a 450 °C anneal in hydrogen, known to passivate traps at the SiSiO2 interface, can impede the generation of mobile protons during a subsequent hydrogen anneal at 600 °C. We further present a detailed reaction and diffusion model for the mobile proton... (Read more)
- 725. Appl. Phys. Lett. 76, 3064 (2000) , “Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes”, A. Hierro, D. Kwon, and S. A. RingelN-Schottky and p+n GaN junctions are currently used for different technologies. A comparison of the deep levels found throughout the entire band gap of n-GaN grown by metal-organic chemical vapor deposition under both configurations is presented. Both... (Read more)
- 726. Appl. Phys. Lett. 76, 3011 (2000) , “Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg”, F. Shahedipour and B. W. WesselsThe stability of defects present in GaN:Mg has been investigated using photoluminescence (PL) spectroscopy. The two dominant defect-related PL emission bands in p-type GaN were investigated, the blue band at 2.8 eV and the ultraviolet (UV) emission band at 3.27 eV. The intensity of the 3.27... (Read more)
- 727. Appl. Phys. Lett. 76, 2847 (2000) , “Ion beam synthesis of graphite and diamond in silicon carbide”, V. Heera and W. SkorupaA high dose of 1×1018 cm2, 60 keV carbon ions was implanted into single crystalline 6H silicon carbide (SiC) at elevated temperatures. The formation of carbon phases in the crystalline SiC lattice was investigated by cross sectional transmission electron microscopy.... (Read more)
- 728. Appl. Phys. Lett. 76, 2838 (2000) , “Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon”, E. Simoen and C. ClaeysA deep level transient spectroscopy study of defects created by 61 MeV proton irradiation of tin-doped n-type Czochralski silicon is reported. A comparison is made with the deep levels observed in irradiated pn junction diodes fabricated in n-type float-zone... (Read more)
- 729. Appl. Phys. Lett. 76, 2770 (2000) , “Neutron intrinsic gettering on electrical property of gate oxynitride in metal-oxide-Si capacitor”, Kuei-Shu Chang-Liao and Nan-Kuang YiThe electrical property of gate oxynitride in metal-oxide-Si capacitor is improved by a neutron-intrinsic-gettering (NIG) treatment. This improvement can be attributed to the reduction of nitrogen concentration in the oxynitride bulk and the decrease of interstitial oxygen defect in the silicon. For... (Read more)
- 730. Appl. Phys. Lett. 76, 2734 (2000) , “Temperature dependence of the iron donor level in silicon at device processing temperatures”, H. Kohno, H. Hieslmair, A. A. Istratov, and E. R. WeberIron depth profiles in a p-type silicon epitaxial layer on a p+-type silicon substrate have been examined by deep-level transient spectroscopy and computer simulations. By comparing the experimental results with the simulations, we revealed the position of the iron deep... (Read more)
- 731. Appl. Phys. Lett. 76, 2559 (2000) , “Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells”, Aurangzeb Khan and Masafumi YamaguchiWe present here the direct observation of minority-carrier injection-enhanced annealing of radiation-induced defects in metalorganic chemical vapor deposition grown p-InGaP at room temperature, and the consequent recovery of radiation damage in InGaP n+-p junction... (Read more)
- 732. Appl. Phys. Lett. 76, 2547 (2000) , “Origin of the nonradiative 110" align="middle"> line defect in lateral epitaxy-grown GaN on SiC substrates”, P. Hacke, K. Domen, A. Kuramata, T. Tanahashi, and O. UedaNonradiative line defects are observed by cathodoluminescence in 110" align="middle"> directions in [100]-oriented GaN stripes grown by lateral epitaxy on SiC substrates. Using transmission electron microscopy, the origin is determined to be principally screw dislocations. We observe the screw... (Read more)
- 733. Appl. Phys. Lett. 76, 2397 (2000) , “Evidence of an oxygen recombination center in p+–n GaInNAs solar cells”, A. Balcioglu, R. K. Ahrenkiel, and D. J. FriedmanWe have studied deep-level impurities in p+n GaInNAs solar cells using deep-level transient spectroscopy (DLTS). These films were grown by atmospheric- and low-pressure metalorganic vapor-phase epitaxy. The base layer is doped with silicon, and the emitter layer is... (Read more)
- 734. Appl. Phys. Lett. 76, 2298 (2000) , “Superstable neutral electron traps in nonplanar thermal oxides on monocrystalline silicon”, Tsuyoshi Ono and Mitiko Miura-MattauschThe existence of superstable neutral electron traps is reported for thermal oxides on nonplanar monocrystalline silicon. These traps are located at the nonplanar corners of the oxide and have measured thermal detrapping energies up to 3.3 eV, nearly an order of magnitude larger than previously... (Read more)
- 735. Appl. Phys. Lett. 76, 2095 (2000) , “Electrical conduction in diamond after vacancy generation by means of carbon-ion implantation”, Johan F. PrinsElectrical resistance measurements have been made on high-purity, type-IIa diamonds which had been implanted with carbon ions at liquid-nitrogen temperature followed by rapid thermal annealing to 500 °C. The initial damage density was estimated by appropriate computer simulation to exceed the... (Read more)
- 736. Appl. Phys. Lett. 76, 2092 (2000) , “Temperature dependence of electron concentration in type-converted silicon by 1×1017 cm–2 fluence irradiation of 1 MeV electrons”, Hideharu MatsuuraThe conduction type of boron (B)-doped silicon (Si) changes from p type into n type by the 1×1017 cm2 fluence irradiation (high-fluence irradiation) of 1 MeV electrons. The temperature dependence of the electron concentration n(T)... (Read more)
- 737. Appl. Phys. Lett. 76, 2089 (2000) , “Thermal equilibrium and stability of copper complexes in silicon crystal”, Minoru NakamuraFormation of the photoluminescence (PL) Cu center (1.014 eV) for silicon crystals diffused with Cu at 700 °C was observed. For the samples with a Cu concentration lower than 1×1014 atom/cm3, almost the same amount of the Cu center was formed for the same concentration... (Read more)
- 738. Appl. Phys. Lett. 76, 2086 (2000) , “On the main irradiation-induced defect in GaN”, L. Polenta, Z-Q. Fang, and D. C. LookWe show that the usual Arrhenius analysis of the main electron-irradiation-induced defect trap in n-type GaN, observed by deep-level transient spectroscopy (DLTS), is not sufficiently accurate. Instead, an exact fitting of the DLTS spectrum for this trap reveals two components, each of which... (Read more)
- 739. Appl. Phys. Lett. 76, 2062 (2000) , “Intrinsic defect-related blue-violet and ultraviolet photoluminescence from Si + -implanted fused silica”, Suk-Ho Choi, R. G. Elliman, and S. CheylanPhotoluminescence (PL) and electron-spin resonance have been used to study intrinsic defects in fused silica during ion implantation and annealing procedures designed to form and H-passivate Si crystallites. Under 250 nm (5 eV) photon excitation, the unimplanted silica has PL bands at 390 (3.2 eV)... (Read more)
- 740. Appl. Phys. Lett. 76, 1896 (2000) , “Low-dose nitrogen implants in 6H–silicon carbide”, N. S. Saks, A. K. Agarwal, S. S. Mani, and V. S. HegdeLow-dose n-type nitrogen implants in 6HSiC have been studied using the Hall effect. Previous studies of doping by implantation in SiC have concentrated on heavily doped layers such as required for transistor sources and drains. Here, we focus on more lightly doped layers, e.g., such as... (Read more)
- 741. Appl. Phys. Lett. 76, 1828 (2000) , “Optically detected magnetic-resonance mapping on the yellow luminescence in GaN”, F. K. Koschnick, K. Michael, and J.-M. SpaethA mapping investigation was performed with photoluminescence-detected electron paramagnetic resonance (PL-EPR) via the yellow luminescence on nominally undoped, metalorganic vapor-phase epitaxy-grown GaN on sapphire. From the results, it is concluded that the PL-EPR signals observed in these... (Read more)
- 742. Appl. Phys. Lett. 76, 1713 (2000) , “Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide”, G. Y. Chung, C. C. Tin, and J. R. WilliamsResults of capacitancevoltage measurements are reported for metaloxidesemiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process... (Read more)
- 743. Appl. Phys. Lett. 76, 1434 (2000) , “Transient enhanced diffusion of implanted boron in 4H-silicon carbide”, M. S. Janson, M. K. Linnarsson, A. Hallén, and B. G. SvenssonExperimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several µm into the samples when annealed at 1600 and 1700 °C for 10 min, but the in-diffused tails remain unaffected when the annealing times... (Read more)
- 744. Appl. Phys. Lett. 76, 1039 (2000) , “Temperature-dependent tunneling through thermally grown SiO2 on n-type 4H– and 6H–SiC”, Richard Waters and Bart Van ZeghbroeckThe temperature dependence of field emission through thermally grown silicon dioxide (SiO2) on n-type 4H and 6H silicon carbide (SiC) substrates is reported. Room-temperature SiO2/SiC barrier heights, ΦB, of 1.92 and 2.12 V are extracted for the... (Read more)
- 745. Appl. Phys. Lett. 76, 1009 (2000) , “Arsenic impurities in GaN”, Chris G. Van de WalleWe present a comprehensive first-principles investigation of arsenic incorporation in GaN. Incorporation of As on the N site, which has previously been implicitly assumed, is favorable only under n-type conditions in a Ga-rich environment. Less Ga-rich conditions, and particularly... (Read more)
- 746. J. Appl. Phys. 88, 842 (2000) , “Capture cross sections of defect states at the Si/SiO2 interface”, J. Albohn, W. Füssel, N. D. Sinh, K. Kliefoth, and W. FuhsModulation capacitance voltage spectroscopy is applied to study the interaction between interface defect states and the conduction band of thermally oxidized n-type silicon wafers, which were prepared using a broad spectrum of preparation conditions. The modulation frequency response of metal... (Read more)
- 747. J. Appl. Phys. 88, 7175 (2000) , “Deep-level impurities in CdTe/CdS thin-film solar cells”, A. Balcioglu, R. K. Ahrenkiel, and F. HasoonWe have studied deep-level impurities in CdTe/CdS thin-film solar cells by capacitancevoltage (CV), deep-level transient spectroscopy (DLTS), and optical DLTS (ODLTS). CdTe devices were grown by close-spaced sublimation. Using DLTS, a dominant electron trap and two hole... (Read more)
- 748. J. Appl. Phys. 88, 6943 (2000) , “Formation of a defect-free denuded zone in GaP substrate by thermal annealing”, Hiroshi Okada, Sei-ichirou Ohmoto, and Takao KawanakaThe vacancy-type Frank dislocation loops in GaP, which are the origin of shallow etch pit defects, dissolve during heat treatment via outdiffusion of the originating point defects. This forms a defect-free denuded zone under the surface of a GaP wafer. The activation enthalpy of the diffusion... (Read more)
- 749. J. Appl. Phys. 88, 6488 (2000) , “Deep levels in GaAs due to Si δ doping”, P. Hubík, J. Kritofik, J. J. Mare, J. Malý, E. Hulicius, and J. Pangrácδ(Si)-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitancevoltage and deep level transient spectroscopy (DLTS) techniques. A detailed analysis of the DLTS signal (including spatial profiles) is performed. DLTS spectra exhibit a clear development... (Read more)
- 750. J. Appl. Phys. 88, 6483 (2000) , “Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:Mg”, D. Seghier and H. P. GislasonWe investigated GaN:Mg samples grown by metal-organic chemical vapor deposition using various electrical measurement techniques. Annealing of highly resistive as-grown samples for different duration of time gives gradual activation of acceptors to concentrations up to 1×1017... (Read more)
- 751. J. Appl. Phys. 88, 6239 (2000) , “Identification of a Pb-related Ti3 + center in flux-grown KTiOPO4”, K. T. Stevens and L. E. HalliburtonElectron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) have been used to identify a new Ti3 + center in KTiOPO4 crystals containing lead impurities. Many of the K + vacancies in this set of KTP crystals are compensated nonlocally by... (Read more)
- 752. J. Appl. Phys. 88, 6089 (2000) , “Electronic energy levels of Er3 + in ZnInGaS4:Er3 + single crystal and its site symmetry”, Sung-Hyu ChoeZnInGaS4 and ZnInGaS4:Er3 + single crystals were grown using the CTR technique. The single crystals grown have a layered crystal structure. These compounds have both a direct and an indirect energy gap. Eight distinctive emission peaks of the... (Read more)
- 753. J. Appl. Phys. 88, 5645 (2000) , “High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The trans-projected-range effect”, Y. M. Gueorguiev, R. Kögler, A. Peeva, A. Mücklich, D. Panknin, R. A. Yankov, and W. SkorupaFive different species, namely B, Si, P, Ge, and As, were implanted at MeV energies into (100)-oriented n-type Czohralski Si, in order to form deep gettering layers during the subsequent annealing. Then the samples were contaminated with Cu by implanting the impurity on the backface and... (Read more)
- 754. J. Appl. Phys. 88, 5630 (2000) , “Variable-dose (1017–1020 cm–3) phosphorus ion implantation into 4H–SiC”, Evan M. Handy and Mulpuri V. RaoMultiple-energy box profile elevated-temperature (700 °C) phosphorus ion implantations were performed into 4HSiC in the doping range of 1×10171×1020 cm3. The implanted material was annealed at 1500, 1600, or 1650 °C with an AIN... (Read more)
- 755. J. Appl. Phys. 88, 5127 (2000) , “Effect of deposition temperature on the optical transmission and paramagnetic centers in pulsed laser deposited amorphous silicon carbide thin films”, M. Tabbal, S. Isber, and T. C. ChristidisThe optical transmission and paramagnetic centers in pulsed laser deposited amorphous silicon carbide films were investigated as a function of the deposition temperature (Td). As Td is raised from 200 to 650 °C, the optical gap of the films... (Read more)
- 756. J. Appl. Phys. 88, 5017 (2000) , “EL2, EL3, and EL6 defects in GaAs highly implanted with sulfur”, Katsuhiro Yokota, Hideto Kuchii, Kazuhiro Nakamura, and Masanori SakaguchiSulfur ions were implanted into a semi-insulating GaAs wafer at 50 keV at a dose of 1×1015 cm2. The implanted GaAs wafer was annealed at temperatures of 6501000 °C for 15 min. Deep levels were measured in regions with carrier concentrations lower than... (Read more)
- 757. J. Appl. Phys. 88, 4654 (2000) , “Photoluminescence of undoped and neutron-transmutation-doped InSe”, A. A. Homs and B. MaríPhotoluminescence (PL) spectra of undoped and neutron-transmutation-doped InSe samples at 15 K are reported. The undoped InSe PL spectrum clearly shows the free exciton line and an exciton-neutral acceptor complex recombination. A structure of partially resolved transitions is observed between 1.315... (Read more)
- 758. J. Appl. Phys. 88, 4558 (2000) , “A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC”, X. D. Chen, S. Fung, and C. D. BelingBeryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100450 K. A comparative study has also been performed in... (Read more)
- 759. J. Appl. Phys. 88, 4547 (2000) , “Boron-interstitial silicon clusters and their effects on transient enhanced diffusion of boron in silicon”, S. SolmiThe nature of ion-implantation induced clusters of boron and silicon-self interstitials (BICs), and their effects on transient enhanced diffusion (TED) of B in Si have been investigated in samples predoped with B at different concentrations. Excess Si interstitials have been introduced by Si +... (Read more)
- 760. J. Appl. Phys. 88, 4525 (2000) , “Formation and annihilation of H-point defect complexes in quenched Si doped with C”, Naoki Fukata and Masashi SuezawaWe investigated the formation and annihilation of H-point defect complexes formed in C-doped Si by heating at high temperatures followed by quenching in hydrogen gas. Specimens of C-doped Si were sealed in quartz capsules together with hydrogen (H) gas, at pressure 0.81.5 atm at high... (Read more)
- 761. J. Appl. Phys. 88, 4122 (2000) , “Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC”, P. J. Macfarlane and M. E. ZvanutThis work describes the characterization of defect centers in 3CSiC, 4HSiC, and 6HSiC. The different SiC crystal structures are examined with electron paramagnetic resonance after thermal oxidation, and after dry (<1 ppm H2O) N2 or O2 heat... (Read more)
- 762. J. Appl. Phys. 88, 3988 (2000) , “Oxidation induced precipitation in Al implanted epitaxial silicon”, A. La Ferla, G. Galvagno, P. K. Giri, G. Franzò, and E. RiminiThe behavior of Al implanted in silicon has been investigated during thermal oxidation. It has been found that precipitation of Al into AlO-defect complexes depends on the implant energy, i.e., on the distance of the dopant from the surface. It occurs at 650 keV, but it does not at 2.0 MeV or... (Read more)
- 763. J. Appl. Phys. 88, 3941 (2000) , “Effect of radiation-induced defects on silicon solar cells”, S. Zh. KarazhanovRecent experiments indicated an anomalous degradation of n+pp+ silicon space solar cells irradiated with high-energy protons or electrons. Several models have been proposed, which assumes that radiation-induced defects are responsible for the... (Read more)
- 764. J. Appl. Phys. 88, 3795 (2000) , “Mechanisms of transition-metal gettering in silicon”, S. M. MyersThe atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered. ©2000 American Institute of... (Read more)
- 765. J. Appl. Phys. 88, 3402 (2000) , “Trapping processes in CaS:Eu2 + ,Tm3 + ”, Dongdong JiaCaS:Eu2 + ,Tm3 + is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm3+ for Ca2+, serve as hole traps for the... (Read more)
- 766. J. Appl. Phys. 88, 3260 (2000) , “Radiotracer identification of a Ta-related deep level in 4H–SiC”, J. Grillenberger and N. AchtzigerTo identify tantalum-related deep levels, deep level transient spectroscopy (DLTS) measurements were performed on Ta-implanted n-type 4Hsilicon carbide. The DLTS spectra of samples implanted with stable 181Ta exhibit one dominating peak representing a trap energy of about... (Read more)
- 767. J. Appl. Phys. 88, 3254 (2000) , “Si self-interstitial injection from Sb complex formation in Si”, J. Fage-Pedersen, P. Gaiduk, J. Lundsgaard Hansen, and A. Nylandsted LarsenIt has recently been established that Si self-interstitials are generated during annealing of high-concentration Sb layers in Si. In the present work, we make use of samples grown with molecular-beam epitaxy. We monitor, at different times and temperatures, the diffusion enhancement or retardation... (Read more)
- 768. J. Appl. Phys. 88, 3249 (2000) , “Magnetic resonance investigations of defects in Ga14N and Ga15N”, M. W. Bayerl, N. M. Reinacher, H. Angerer, O. Ambacher, M. S. Brandt, and M. StutzmannThe influence of the nitrogen nuclear spin on the optically detected magnetic resonance and electron spin resonance signatures of the intrinsic shallow donor and a deep defect causing the characteristic yellow luminescence have been studied on wurtzite GaN epitaxial layers grown by plasma induced... (Read more)
- 769. J. Appl. Phys. 88, 3082 (2000) , “Study of electron, proton, and swift heavy ion irradiation of n-type germanium using deep level transient spectroscopy”, A. Colder, M. Levalois, and P. MarieTime dependence and temperature annealing effects are studied for different n-type germanium irradiated with swift heavy ions (SHI), protons and electrons. Deep level transient spectroscopy measurements show that the main peak located at about 200 K, previously ascribed to the A-center... (Read more)
- 770. J. Appl. Phys. 88, 2583 (2000) , “Statistical analysis in the negative-U model of donors in AlxGa1–xAs:Si”, F. Rziga-Ouaja, H. Mejri, A. Triki, and A. SelmiHall measurements were performed on molecular beam epitaxy grown AlxGa1xAs:Si in the temperature range 77300 K. The DX center has been detected through the observation of persistent photoconductivity at low temperature. Two statistics... (Read more)
- 771. J. Appl. Phys. 88, 2309 (2000) , “Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon”, D. C. Schmidt and B. G. SvenssonDeep-level transient spectroscopy (DLTS), photoluminescence (PL), and transmission electron microscopy (TEM) measurements have been made on n-type silicon after implanting with 5.6 MeV Si3 + ions using doses of 1091014 cm2 and anneals... (Read more)
- 772. J. Appl. Phys. 88, 2191 (2000) , “Infrared quantum counter studies in europium doped lanthanum trifluoride”, Wenyan Tian, Ranjit S. Pandher, and B. Rami ReddyViolet upconversion signals in the wavelength region 340420 nm were observed from LaF3:Eu3 + under 583 nm dye laser excitation. The intensities of some upconversion signals enhanced ~8× under double resonance excitation by a 583 nm dye laser and a 790.6 nm Ti:... (Read more)
- 773. J. Appl. Phys. 88, 205 (2000) , “Nature of the native deep localized defect recombination centers in the chalcopyrite and orthorhombic AgInS2”, J. Krustok, J. Raudoja, and M. KrunksWe studied the deep photoluminescence (PL) emission in polycrystalline chalcopyrite and orthorhombic AgInS2. In both phases several PL bands were detected at 8 K. On the energy scale these deep PL bands are positioned according to a regular pattern. This is explained as being due to... (Read more)
- 774. J. Appl. Phys. 88, 2024 (2000) , “Quasistatic capacitance-voltage characteristics of plane-parallel structures: Metal/semi-insulator/metal”, K. dánskýQuasistatic capacitance-voltage characteristics of plane-parallel structures of the semi-insulating GaAs with two metal contacts are calculated numerically. The model of residual shallow acceptors compensated for by an excess of deep donors is used for the semi-insulating GaAs. Under consideration... (Read more)
- 775. J. Appl. Phys. 88, 1943 (2000) , “Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy”, Yutaka Tokuda and Kazuhiro KamiyaMetastable hydrogen-related defects (M3/M4) in n-GaAs were studied in detail by using isothermal deep-level transient spectroscopy. In order to clarify the electric-field dependence of the electron-emission process, the double-correlation technique was applied to both M3 and M4 defects. It... (Read more)
- 776. J. Appl. Phys. 88, 1851 (2000) , “Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers”, H. B. Kim, T. G. Kim, J. H. Son, C. N. Whang, and K. H. ChaeSi ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1×1014 to 1×1017 Si/cm2 at room temperature. Si ions go through the interface between SiO2... (Read more)
- 777. J. Appl. Phys. 88, 1827 (2000) , “Self-diffusion studies of 15N in amorphous Si3BC4.3N2 ceramics with ion implantation and secondary ion mass spectrometry”, H. Schmidt and G. BorchardtNitrogen self-diffusion studies in amorphous precursor-derived Si3BC4.3N2 ceramics were carried out, using ion implanted stable 15N isotopes as tracers and secondary ion mass spectrometry for depth profiling. The analysis of the diffusion profiles in the... (Read more)
- 778. J. Appl. Phys. 88, 1698 (2000) , “Electron paramagnetic resonance studies on microcrystalline silicon prepared by sputtering method”, Takashi EharaDangling bond (DB) defects in unhydrogenated microcrystalline silicon (µc-Si) prepared by rf sputtering have been studied. Raman spectra and x-ray diffraction indicate that the µc-Si fraction has been formed at the Ar sputtering pressure higher than 26.6 Pa... (Read more)
- 779. J. Appl. Phys. 88, 1325 (2000) , “Characterization of defects in (ZnMg)Se compounds by positron annihilation and photoluminescence”, F. Plazaola and K. SaarinenDefect characterization of as-grown Zn1xMgxSe mixed crystals (0x<0.6) and the effect of Zn vapor annealing has been studied by positron lifetime and photoluminescence measurements. We obtain both experimental and theoretical evidence that the bulk... (Read more)
- 780. J. Appl. Phys. 88, 1319 (2000) , “Emission channeling studies of Pr in GaN”, U. Wahl, A. Vantomme, and G. LangoucheWe report on the lattice location of Pr in thin film, single-crystalline hexagonal GaN using the emission channeling technique. The angular distribution of β particles emitted by the radioactive isotope 143Pr was monitored by a position-sensitive electron detector... (Read more)
- 781. J. Appl. Phys. 88, 1312 (2000) , “Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon”, J. Wong-Leung, S. Fatima, and C. JagadishExtended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar damage distribution were compared. The... (Read more)
- 782. J. Appl. Phys. 87, 8741 (2000) , “Nitrogen and hydrogen in thick diamond films grown by microwave plasma enhanced chemical vapor deposition at variable H2 flow rates”, S. V. Nistor and M. StefanThe presence and concentration of nitrogen and hydrogen impurities in thick diamond films grown by microwave plasma chemical vapor deposition at various H2 gas flow rates, keeping a constant [CH4]:[H2] = 2.5% concentration ratio, have been determined by electron spin... (Read more)
- 783. J. Appl. Phys. 87, 8682 (2000) , “Electron paramagnetic resonance of platinum impurities in KTiOPO4 crystals”, N. Y. Garces, K. T. Stevens, and L. E. HalliburtonSingle crystals of KTiOPO4 (KTP) often contain trace amounts of isolated platinum impurities. When present in sufficient concentration, these ions increase the KTP crystal's susceptibility to form gray tracks during frequency doubling of high-power laser beams. Electron paramagnetic... (Read more)
- 784. J. Appl. Phys. 87, 8461 (2000) , “Vacancy effects in transient diffusion of Sb induced by ion implantation of Si + and As + ions”, G. Lulli, M. Bianconi, and S. SolmiThe influence of defects injected by room temperature, high-energy implantation of Si and As ions on the diffusion of Sb marker in Si is investigated. MeV ions induce transient enhanced diffusion (TED) of ion implanted Sb, which increases with increasing the vacancy supersaturation generated in the... (Read more)
- 785. J. Appl. Phys. 87, 8389 (2000) , “Influence of the dopant species on radiation-induced defects in Si single crystals”, Aurangzeb Khan and Masafumi YamaguchiObservations on deep levels introduced in silicon by 1 MeV electron irradiation are reported using boron- or gallium-doped Czochralski (CZ) grown Si space solar cells with different doping concentrations, deep level transient spectroscopy analysis has been carried out to detect the radiation-induced... (Read more)
- 786. J. Appl. Phys. 87, 8368 (2000) , “Defect identification in GaAs grown at low temperatures by positron annihilation”, J. Gebauer, F. Börner, and R. Krause-RehbergWe use positron annihilation to study vacancy defects in GaAs grown at low temperatures (LTGaAs). The vacancies in as-grown LTGaAs can be identified to be Ga monovacancies, VGa, according to their positron lifetime and annihilation momentum distribution. The charge... (Read more)
- 787. J. Appl. Phys. 87, 8361 (2000) , “Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere”, Naoki Fukata and Masashi SuezawaOptical absorption spectra and the annealing behavior of hydrogen (H)-point defect complexes in carbon (C)-doped Si after hydrogenation were investigated. Specimens of C-doped Si (C concentration: 1.7×1017 cm3) were sealed in quartz capsules together with... (Read more)
- 788. J. Appl. Phys. 87, 8201 (2000) , “Shallow buried SiNx layers”, L. Barbadillo, M. J. Hernández, M. Cervera, P. Rodríguez, and J. PiquerasHigh dose nitrogen implantations have been performed at an energy of 30 keV. After high temperature annealing, 1200 °C, a buried layer composed mostly of silicon nitride is formed leaving an overlayer with a high fraction of crystalline silicon. The lattice constant of the overlayer and the... (Read more)
- 789. J. Appl. Phys. 87, 7999 (2000) , “Rate constants for the reaction of H2 with defects at the SiO2/Si(111) interface”, Ligia Gheorghita and Elmer OgryzloA radio frequency probe has been used to monitor changes in charge-carrier recombination centers at a SiO2/Si interface by following the steady-state photogenerated carrier concentration in the silicon. A silicon surface covered with ~200 Å of thermal oxide was exposed to gaseous... (Read more)
- 790. J. Appl. Phys. 87, 7782 (2000) , “In- and out-diffusion of oxygen during the buried-oxide formation in oxygen-implanted silicon”, Haruhiko Ono and Atsushi OguraFormation mechanism of buried oxide in silicon wafers during the annealing process after oxygen implantation has been investigated by using Fourier-transform infrared absorption spectroscopy and secondary ion mass spectrometry. The implanted Si wafers were annealed at a different temperature, for a... (Read more)
- 791. J. Appl. Phys. 87, 7519 (2000) , “Decrease of electron paramagnetic defect density and enhancement of electron field emission in annealed carbon films”, Yun-Hi LeeWe have studied the effect of the paramagnetic defects in carbon films on the field-emission properties. The paramagnetic defects in carbon films originating from the carbon dangling bonds were measured using electron spin resonance (ESR). We found a reduction of the dangling bond density in the... (Read more)
- 792. J. Appl. Phys. 87, 663 (2000) , “Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs”, A. P. Knights and S. RuffellGallium arsenide layers, Si-doped at concentrations of 2×1019, 1×1019, and 5×1018 cm3, grown on SI substrates were implanted using multiple-energy regimes, with O+, He+, and H+, respectively, to... (Read more)
- 793. J. Appl. Phys. 87, 4629 (2000) , “Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers”, E. V. Monakhov, A. Yu. Kuznetsov, and B. G. SvenssonThe effect of strain and composition on deep electronic levels in the energy band gap of epitaxial Si0.87Ge0.13 layers grown by chemical vapor deposition has been investigated by deep level transient spectroscopy. Two major levels attributed to a vacancyphosphorus (VP)... (Read more)
- 794. J. Appl. Phys. 87, 4293 (2000) , “Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies”, A. Zerrai, G. Marrakchi, and G. BremondA complete quantitative analysis of electrical and optical properties is carried out on the vanadium transition metal in semi-insulating and n type conductor Cd0.96Zn0.04Te crystals using deep level transient spectroscopy, deep level optical spectroscopy, and... (Read more)
- 795. J. Appl. Phys. 87, 4194 (2000) , “Influence of annealing ambient on oxygen out-diffusion in Czochralski silicon”, Hideyuki YamazakiThe out-diffusion of oxygen in Czochralski grown silicon (100) wafers annealed at high temperature under a hydrogen or an argon ambient has been investigated by secondary ion mass spectrometry (SIMS). The wafers were annealed with three successive process: loading of wafers into furnace at 850... (Read more)
- 796. J. Appl. Phys. 87, 4160 (2000) , “Generation of Frenkel defects in heavily arsenic doped silicon: A first-principles study”, Jianjun Xie and S. P. ChenThe generation of Frenkel defects (a self-interstitial and a vacancy) in heavily As doped Si is investigated theoretically based on first-principles total energy calculations. We find that it is much easier to generate a self-interstitial and a vacancy close to substitutional As atoms than in pure... (Read more)
- 797. J. Appl. Phys. 87, 4119 (2000) , “Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams”, Akira Uedono and Shoichiro TanigawaDepth distributions and species of defects were determined from measurements of Doppler broadening spectra of annihilation radiation and lifetime spectra of positrons for 6H-SiC implanted with 200 keV P + at a dose of 1×1015 cm2. The annealing behavior... (Read more)
- 798. J. Appl. Phys. 87, 3973 (2000) , “Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar + implantation”, A. P. Knights, M. A. Lourenço, and K. P. HomewoodEdge termination of Schottky barrier diodes has been achieved using 30 keV Ar + ions implanted at a dose of 1×1015 cm2. The reverse-bias leakage current is reduced by 2 orders of magnitude following postimplant annealing at a temperature of 600 °C.... (Read more)
- 799. J. Appl. Phys. 87, 3696 (2000) , “Effects of donor concentration on transient enhanced diffusion of boron in silicon”, S. SolmiThe effects of substrate donor concentration on transient enhanced diffusion (TED) of boron implanted into silicon wafers predoped with arsenic or phosphorus have been investigated by using secondary ion mass spectroscopy and theoretical simulations. Boron ions have been implanted at low energy... (Read more)
- 800. J. Appl. Phys. 87, 3674 (2000) , “Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements”, M. CoeckNeutron transmutation doping of n-type silicon was obtained by irradiating the samples with thermal neutrons in order to create P atoms. Positron lifetime measurements were carried out and the evolution of the induced defects was studied by thermal annealing of the samples. The annealing out... (Read more)
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