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- 601. Appl. Phys. Lett. 79, 1115-1117 (2001) , “Bulk diffusion of microwave plasma activated deuterium into undoped natural diamond”, A. Laikhtman and A. HoffmanIn the present work undoped natural (100)-, (111)-, and (110)-oriented diamonds were exposed to microwave deuterium plasma. Secondary ion mass spectroscopy (SIMS) in static mode showed that surface deuterium concentration is the highest for (110) surface and the lowest one for (100)-oriented... (Read more)
- 602. Appl. Phys. Lett. 79, 1103-1105 (2001) , “Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing”, S. Solmi, L. Mancini, S. Milita, and M. ServidoriBoron marker-layer structures have been used to investigate the effects of B doping on the evolution of the implantation damage and of the associated transient enhanced diffusion. The samples were damaged by Si implants at different doses in the range... (Read more)
- 603. Appl. Phys. Lett. 79, 1094-1096 (2001) , “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy”, Wei Li and Markus PessaPositron-annihilation measurements and nuclear reaction analysis [utilizing the 14N(d,p)15N and 14N(d,He)12C reactions] in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the... (Read more)
- 604. Appl. Phys. Lett. 78, 949 (2001) , “Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well”, A. Poyai, E. Simoen, and C. ClaeysThis letter describes a transient phenomenon in the reverse hole current of large-area shallow n+p-well junctions, giving rise to a hump at a specific reverse bias. This corresponds to a certain depletion depth in the retrograde p well, which has been fabricated... (Read more)
- 605. Appl. Phys. Lett. 78, 913 (2001) , “Interaction of vacancies with interstitial oxygen in silicon”, R. A. Casali, H. Rücker, and M. MethfesselBased on first-principle total-energy calculations, we show that the majority of vacancies are trapped by interstitial oxygen in silicon wafers with a typical oxygen concentration of about 1018 cm3. Vacancies and interstitial oxygen form so called A centers with a binding... (Read more)
- 606. Appl. Phys. Lett. 78, 907 (2001) , “Stacking fault effects in pure and n-type doped GaAs”, T. M. SchmidtUsing ab initio total-energy calculations, we investigate the effects of stacking faults on the properties of dopants in pure and n-type doped GaAs. We find that the Si impurity segregates towards a GaAs stacking fault. A Si atom at a Ga site in the stacking fault, in either a neutral... (Read more)
- 607. Appl. Phys. Lett. 78, 736 (2001) , “Fast through-bond diffusion of nitrogen in silicon”, Peter A. Schultz and Jeffrey S. NelsonWe report first-principles total energy calculations of interaction of nitrogen in silicon with silicon self-interstitials. Substitutional nitrogen captures a silicon interstitial with 3.5 eV binding energy forming a 100" align="middle"> split interstitial ground-state geometry, with the nitrogen... (Read more)
- 608. Appl. Phys. Lett. 78, 46 (2001) , “Pseudodonor nature of the DI defect in 4H-SiC”, L. Storasta, F. H. C. Carlsson, S. G. Sridhara, J. P. Bergman, A. Henry, T. Egilsson, A. Hallén, and E. JanzénWe use the recent findings about the pseudodonor character of the DI defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the... (Read more)
- 609. Appl. Phys. Lett. 78, 446 (2001) , “Neutron transmutation of 10B isotope-doped diamond”, K. JagannadhamDiamond samples grown by microwave plasma chemical vapor deposition and doped with 10B have been irradiated under thermal neutron flux of 1013 cm2 s1 for 76 h to examine transmutation of 10B to 7Li and the attendant... (Read more)
- 610. Appl. Phys. Lett. 78, 4142 (2001) , “Positron annihilation study of Pd contacts on impurity-doped GaN”, Jong-Lam Lee and Jong Kyu KimPd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped... (Read more)
- 611. Appl. Phys. Lett. 78, 3977 (2001) , “Theoretical study of sulfur–hydrogen–vacancy complex in diamond”, Takehide Miyazaki and Hideyo OkushiWe present an ab initio study of sulfur (S)hydrogen (H)vacancy (V) complexes in diamond. An SHV defect may become a much shallower donor than an isolated substitutional S defect when S in the complex is either three or five connected. Upon annealing the... (Read more)
- 612. Appl. Phys. Lett. 78, 3818 (2001) , “Anomalous phosphorus diffusion in Si during post-implantation annealing”, Ryangsu Kim, Yoshikazu Furuta, Syunsuke Hayashi, Tetsuya Hirose, Toshihumi Shano, Hiroshi Tsuji, and Kenji TaniguchiThe transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720 °C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P... (Read more)
- 613. Appl. Phys. Lett. 78, 3815 (2001) , “Characterization of electron-irradiated n-GaN”, S. A. Goodman, F. D. Auret, and M. J. LegodiUsing deep level transient spectroscopy, we have investigated the electron trap defects introduced in n-GaN grown using the epitaxial lateral overgrowth technique during high energy electron irradiation from a 90Sr radionuclide source. The results indicate that the major... (Read more)
- 614. Appl. Phys. Lett. 78, 3812 (2001) , “Microscopic structure of hydrogen impurity in LiNbO3”, H. H. Nahm and C. H. ParkWe investigate the microscopic structures of interstitial and substitutional hydrogen impurities in LiNbO3 through the first-principles pseudopotential total-energy calculations. The interstitial hydrogen is located between two O atoms and bonds to one of the oxygen atoms. The hydrogen... (Read more)
- 615. Appl. Phys. Lett. 78, 3442 (2001) , “Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation”, P. Pellegrino and P. LévêqueAn experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy... (Read more)
- 616. Appl. Phys. Lett. 78, 332 (2001) , “Evolution of deep centers in GaN grown by hydride vapor phase epitaxy”, Z.-Q. Fang and D. C. LookDeep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety... (Read more)
- 617. Appl. Phys. Lett. 78, 3217 (2001) , “Direct evidence for implanted Fe on substitutional Ga sites in GaN”, U. Wahl, A. Vantomme, and G. LangoucheThe lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60 keV room temperature implantation of the precursor isotope 59Mn at a dose of 1.0×1013 cm2 and annealing up... (Read more)
- 618. Appl. Phys. Lett. 78, 312 (2001) , “Acceptor activation of Mg-doped GaN by microwave treatment”, Shoou-Jinn Chang and Yan-Kuin SuA microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way... (Read more)
- 619. Appl. Phys. Lett. 78, 3041 (2001) , “Yellow and green luminescence in a freestanding GaN template”, M. A. Reshchikov and H. MorkoçWe have studied a broad photoluminescence band in high-mobility freestanding 200-µm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV and a green... (Read more)
- 620. Appl. Phys. Lett. 78, 291 (2001) , “Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon”, P. K. GiriWe have investigated the origin of the photoluminescence (PL) W band in ion-implanted Si by studying the temperature evolution and depth profile of the related defects. Evolution of the PL spectra induced by postimplant annealing is correlated to a transition of small interstitial clusters to... (Read more)
- 621. Appl. Phys. Lett. 78, 2908 (2001) , “Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers”, D. Åberg, A. Hallén, P. Pellegrino, and B. G. SvenssonIon implantation causes free charge carrier reduction due to damage in the crystalline structure. Here, nitrogen-doped 4H silicon carbide (n type) epitaxial layers have been investigated using low ion doses in order to resolve the initial stage of the charge carrier reduction. It was found... (Read more)
- 622. Appl. Phys. Lett. 78, 2882 (2001) , “Transient photoluminescence of defect transitions in freestanding GaN”, M. A. Reshchikov and H. MorkoçDeep level defects responsible for the 2.4 eV photoluminescence (PL) band in a freestanding GaN template were studied by transient photoluminescence. A nonexponential decay of PL intensity observed at low temperature is attributed to a donoracceptor pair recombination involving a shallow donor... (Read more)
- 623. Appl. Phys. Lett. 78, 2843 (2001) , “Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study”, H. J. von Bardeleben and J. L. CantinPolymer-like and diamond-like hydrogenated amorphous carbon films, characterized by high spin concentrations of 1020 cm3, have been studied by multiple frequency electron paramagnetic resonance (EPR) spectroscopy at 9, 35, and 94 GHz. Whereas the low-frequency... (Read more)
- 624. Appl. Phys. Lett. 78, 2730 (2001) , “Structure and formation mechanism of the Ealpha[prime]" align="middle"> center in amorphous SiO2”, T. Uchino, M. Takahashi, and T. YokoWe provide a possible formation mechanism for one of the Si-related paramagnetic centers in amorphous silica, Ealpha[prime]" align="middle">, which is stable only below 200 K, on the basis of the quantum-chemical calculations. We show that the divalent Si defect can trap a... (Read more)
- 625. Appl. Phys. Lett. 78, 2682 (2001) , “Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon”, B. Stritzker, M. Petravic, J. Wong-Leung, and J. S. WilliamsThe selectivity of interstitial-based extended defects (loops) and nanocavities for the gettering of Cu and Fe in Si has been studied. Controlled amounts of Cu and Fe were introduced by ion implantation into wafers containing pre-existing nanocavities and/or dislocations. Results show that Cu has a... (Read more)
- 626. Appl. Phys. Lett. 78, 2512 (2001) , “On the nature of the D1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy”, A. Fissel and W. RichterUndoped and boron-doped SiC layers are grown on hexagonal SiC(0001) substrates by means of solid-source molecular-beam epitaxy. Hexagonal 4H and 6HSiC layers are grown homoepitaxially via step-controlled epitaxy, whereas the cubic 3CSiC is grown pseudomorphically via nucleation and... (Read more)
- 627. Appl. Phys. Lett. 78, 2458 (2001) , “Residual arsenic site in oxidized AlxGa1–xAs (x = 0.96)”, S.-K. Cheong, B. A. Bunker, and T. ShibataX-ray absorption fine-structure spectroscopy is used to determine the site of residual As in wet-oxidized Al0.96Ga0.04As. In a ~0.5-µm-oxide film removed from its GaAs substrate, the remaining As atoms are found to be coordinated with oxygen in the form of... (Read more)
- 628. Appl. Phys. Lett. 78, 2321 (2001) , “Retardation of boron diffusion in silicon by defect engineering”, Lin Shao, Xinming Lu, Xuemei Wang, Irene Rusakova, Jiarui Liu, and Wei-Kan ChuBy judiciously placing vacancy and interstitial defects at different depths, we are able to enhance or retard boron diffusion. This opens up a new approach for the formation of shallow P+n junction in silicon. After preimplantation with 50 or 500 keV Si + ions to... (Read more)
- 629. Appl. Phys. Lett. 78, 231 (2001) , “Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry”, T. Henkel, Y. Tanaka, N. Kobayashi, and H. TanoueThe diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300 °C due to redistribution processes. In addition, strong out diffusion... (Read more)
- 630. Appl. Phys. Lett. 78, 2285 (2001) , “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films”, X. L. WuPhotoluminescence and cathodoluminescence (CL) spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner... (Read more)
- 631. Appl. Phys. Lett. 78, 2178 (2001) , “Deep centers in a free-standing GaN layer”, Z.-Q. Fang and D. C. LookSchottky barrier diodes, on both Ga and N faces of a ~300-µm-thick free-standing GaN layer, grown by hydride vapor phase epitaxy (HVPE) on Al2O3 followed by laser separation, were studied by capacitancevoltage and deep level transient spectroscopy (DLTS)... (Read more)
- 632. Appl. Phys. Lett. 78, 2000 (2001) , “Athermal annealing of low-energy boron implants in silicon”, D. W. Donnelly and B. C. CovingtonSilicon samples that have been ion implanted with boron at energies below 3 keV have been athermally annealed. The annealing process has been characterized using secondary ion mass spectrometry and infrared absorption spectroscopy. The athermally annealed samples show activation comparable to that... (Read more)
- 633. Appl. Phys. Lett. 78, 1309 (2001) , “Effect of photoelectrochemical oxidation on properties of GaN epilayers grown by molecular beam epitaxy”, D. J. Fu, T. W. Kang, Sh. U. Yuldashev, N. H. Kim, S. H. Park, and J. S. YunGaN epilayers grown by molecular beam epitaxy were photoelectrochemically (PEC) oxidized in an aqueous KOH solution. The oxidation effect was investigated by defect-related photoconductivity and photoluminescence. The PEC treated GaN show decreased extrinsic photoresponse and concentration of deep... (Read more)
- 634. Appl. Phys. Lett. 78, 1246 (2001) , “Emission properties of an amorphous AlN:Cr3 + thin-film phosphor”, M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. RichardsonChromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 104 Torr. Film thickness was typically 200 nm. After growth, the films were "activated" at ~1300 K for 30 min in a... (Read more)
- 635. Appl. Phys. Lett. 78, 1234 (2001) , “Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation”, D. T. Britton, M.-F. Barthe, C. Corbel, A. Hempel, L. Henry, and P. DesgardinWe have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively... (Read more)
- 636. Appl. Phys. Lett. 78, 117 (2001) , “Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates”, M. MynbaevaEpitaxial 4HSiC layers were grown by chemical vapor deposition (CVD) on porous silicon carbide. Porous SiC substrates were fabricated by the formation of a 2 to 15 µm thick porous SiC layer on commercial off-axis 4HSiC substrates. The thickness of CVD grown layers was about 2.5... (Read more)
- 637. J. Appl. Phys. 90, 824 (2001) , “Energetics of native defects in ZnO”, Fumiyasu Oba, Shigeto R. Nishitani, Seiji Isotani, and Hirohiko AdachiWe have investigated the formation energies and electronic structure of native defects in ZnO by a first-principles plane-wave pseudopotential method. When p-type conditions are assumed, the formation energies of donor-type defects can be quite low. The effect of self-compensation by the... (Read more)
- 638. J. Appl. Phys. 90, 807 (2001) , “Photoluminescence characteristics of ZnTe epilayers”, Young-Moon Yu, Sungun Nam, and Ki-Seon LeeHigh quality ZnTe epilayers have been grown on semi-insulating GaAs(100) substrates by hot-wall epitaxy, and the photoluminescence characteristics were investigated. The free exciton binding energy is found to be 12.7 meV and the free exciton reduced mass to be 0.095m0 from the... (Read more)
- 639. J. Appl. Phys. 90, 6526 (2001) , “Interaction of hydrogen with nitrogen interstitials in wurtzite GaN”, A. F. WrightFirst-principles techniques are used to investigate the interaction of hydrogen with nitrogen interstitials in wurtzite GaN. The calculations reveal that hydrogen can either compensate an interstitial by donating an electron to an interstitial acceptor level, or passivate the interstitial by forming... (Read more)
- 640. J. Appl. Phys. 90, 5946 (2001) , “Cr3 + (I) and Cr3 + (II) centers in alexandrite single crystal”, T. H. YeomNuclear magnetic resonance spectra of the 9Be and 27Al nuclei as well as electron paramagnetic resonance spectra of Cr3 + ion in an alexandrite single crystal (BeAl2O4:Cr) have been investigated by employing a pulse nuclear magnetic resonance... (Read more)
- 641. J. Appl. Phys. 90, 5147 (2001) , “Effects of P doping on photoluminescence of Si1–xGex alloy nanocrystals embedded in SiO2 matrices: Improvement and degradation of luminescence efficiency”, Kimiaki Toshikiyo, Masakazu Tokunaga, and Shinji TakeokaThe effects of P doping on photoluminescence (PL) properties of Si1xGex alloy nanocrystals (nc-Si1xGex) in SiO2 thin films were studied. P doping drastically decreases the electron spin resonance (ESR)... (Read more)
- 642. J. Appl. Phys. 90, 4293 (2001) , “Diffusion of ion-implanted boron in germanium”, Suresh Uppal and Arthur F. W. WilloughbyThe diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation, and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be... (Read more)
- 643. J. Appl. Phys. 90, 3894 (2001) , “Origin of point defects in AgInS2/GaAs epilayer obtained from photoluminescence measurement”, S. H. You and K. J. HongThe AgInS2 epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS2/GaAs was found to be... (Read more)
- 644. J. Appl. Phys. 90, 3642 (2001) , “Nitrogen effect on self-interstitial generation in Czochralski silicon revealed by gold diffusion experiments”, A. L. Parakhonsky and E. B. YakimovGold diffusion in usual Czochralski (Cz) grown Si and in Cz Si doped with nitrogen during growth has been studied. The results presented can be explained under the assumption that the substitutional Aus concentration in the Cz Si samples is effected by the competition between the... (Read more)
- 645. J. Appl. Phys. 90, 3405 (2001) , “Deep levels and their impact on generation current in Sn-doped InGaAsN”, R. J. Kaplar, A. R. Arehart, and S. A. RingelWe have investigated deep levels in 1.05 eV, Sn-doped, n-type In0.075Ga0.925As0.975N0.025 lattice-matched to GaAs. The samples were grown by metalorganic chemical vapor deposition. Capacitancevoltage measurements were used to determine... (Read more)
- 646. J. Appl. Phys. 90, 3038 (2001) , “Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide”, Takeshi Ohshima, Hisayoshi Itoh, and Masahito YoshikawaThe effects of gamma-ray (γ-ray) irradiation on the channel mobility of enhancement-type n-channel 6H silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) with gate oxides annealed in a hydrogen atmosphere after pyrogenic oxidation were studied. Irradiation... (Read more)
- 647. J. Appl. Phys. 90, 2806 (2001) , “Trapping of gold by nanocavities induced by H+ or He++ implantation in float zone and Czochralski grown silicon wafers”, I. PérichaudIn silicon, implantation of He++ or H+ ions and subsequent annealing can lead to the formation of nanocavities below the implanted surface of the wafers. These nanocavities, which behave as trapping sites for metallic impurities, can be located near the devices in integrated... (Read more)
- 648. J. Appl. Phys. 90, 2618 (2001) , “Anomalous behavior of Sb implanted Si after mega-electron-volt carbon irradiation”, Soma Dey and Shikha VarmaWe have investigated the dopant behavior of 1.5 MeV implanted Sb in Si(100) both prior to and following irradiation with 8 MeV C+ ions. The irradiation stimulates the regrowth in silicon lattice and induces a high Sb substitution of 93% after a thermal anneal of 400 °C. At higher... (Read more)
- 649. J. Appl. Phys. 90, 237 (2001) , “Defects in 30 keV Er + -implanted SiO2/Si studied by positron annihilation and cathodoluminescence”, K. HirataDefects in SiO2 (48 nm)/Si induced by 30 keV Er ion implantation were studied by positron annihilation. Depth-selective information on defects for samples implanted with doses of 3.0×1014 and 1.5×1015 Er/cm2 was obtained by a variable-energy... (Read more)
- 650. J. Appl. Phys. 90, 2252 (2001) , “Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures”, E. Thor, M. Mühlberger, L. Palmetshofer, and F. SchäfflerDislocated Si, SiGe, SiC, and SiGeC n-type heterostructures, grown by molecular beam epitaxy, were characterized by capacitancevoltage profiling and deep-level transient spectroscopy. Exclusively dislocation-related defects were found in the different layers, which correspond to the... (Read more)
- 651. J. Appl. Phys. 90, 1768 (2001) , “Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation”, Julie L. NgauRecent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via... (Read more)
- 652. J. Appl. Phys. 90, 1179 (2001) , “Buried oxide and defects in oxygen implanted Si monitored by positron annihilation”, A. C. Kruseman, A. van Veen, H. Schut, and P. E. MijnarendsOne- and two-detector Doppler broadening measurements performed on low (~1014 to 1015 O + /cm2) and high dose (~1017 to 1018 O + /cm2) oxygen-irradiated Si using variable-energy slow positrons are analyzed in... (Read more)
- 653. J. Appl. Phys. 90, 1170 (2001) , “Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells”, Aurangzeb Khan, Masafumi Yamaguchi, Y. Ohshita, N. Dharmarasu, and K. ArakiThe present extensive systematic study of defect introduction rates as a function of boron, gallium, oxygen, and carbon concentrations by means of deep level transient spectroscopy has drawn a quite complete picture towards the identification of the dominant radiation-induced defects in Si. The... (Read more)
- 654. J. Appl. Phys. 90, 1164 (2001) , “Interaction of hydrogen with gallium vacancies in wurtzite GaN”, A. F. WrightFirst-principles techniques are used to investigate the interaction of hydrogen with gallium vacancies in wurtzite GaN. The calculations reveal that hydrogen can either compensate a vacancy by donating an electron to a vacancy acceptor level, or passivate the vacancy by forming a hydrogen-vacancy... (Read more)
- 655. J. Appl. Phys. 89, 955 (2001) , “Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates”, Patricia J. Macfarlane and M. E. ZvanutWe have used electron paramagnetic resonance to study two intrinsic defects in oxidized epitaxial layers of 3C SiC, a potential substitute for Si in high speed, high power electronics. One center can be described by an isotropic g value of 2.0044. The defect is distinguished by a strong... (Read more)
- 656. J. Appl. Phys. 89, 928 (2001) , “Investigation of two infrared bands at 1032 and 1043 cm–1 in neutron irradiated silicon”, C. A. Londos and L. G. FytrosWe report on infrared (IR) studies of defects in Czochralski-grown silicon (Cz-Si) subjected to fast neutron irradiation and subsequent thermal anneals. We focus mainly on the investigation of the VO4 defect which, in the literature, has been correlated with the pair of bands (1032 and... (Read more)
- 657. J. Appl. Phys. 89, 86 (2001) , “Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP”, Y. W. Zhao, Y. L. Luo, S. Fung, and C. D. BelingUndoped and Fe-doped liquid encapsulated Czochralski (LEC) InP has been studied by Hall effect, currentvoltage (IV), and infrared absorption (IR) spectroscopy. The results indicate that a native hydrogen vacancy complex donor defect exists in as-grown LEC InP. By studying... (Read more)
- 658. J. Appl. Phys. 89, 8345 (2001) , “High resolution measurement of the carbon localized vibrational mode in gallium arsenide”, Naoto NagaiThe localized vibrational mode of carbon substituted at arsenic sites in gallium arsenide (GaAs) was measured with infrared absorption spectroscopy at 0.005 cm1 resolution. Well-resolved fine structures were observed, yielding quantitative information on the line half widths and... (Read more)
- 659. J. Appl. Phys. 89, 7932 (2001) , “Capture cross sections of the acceptor level of iron–boron pairs in p-type silicon by injection-level dependent lifetime measurements”, Daniel Macdonald and Andrés CuevasInjection-level dependent recombination lifetime measurements of iron-diffused, boron-doped silicon wafers of different resistivities are used to determine the electron and hole capture cross sections of the acceptor level of ironboron pairs in silicon. The relative populations of... (Read more)
- 660. J. Appl. Phys. 89, 7772 (2001) , “Observation of Fe-related defects in neutron irradiated semi-insulating InP”, B. Marí, M. A. Hernández-Fenollosa, and F. J. NavarroOptical absorption and positron lifetime measurements have been performed on Fe-doped semi-insulating InP single crystals irradiated with thermal neutrons in a wide dose range from 0.1 to 2.7×1017 n cm2. Two lifetimes were found: τ1 = 210 ps is... (Read more)
- 661. J. Appl. Phys. 89, 6536 (2001) , “Optical transmission spectroscopy of semi-insulating GaAs substrate implanted by arsenic ions at different dosages”, Gong-Ru Lin and Chin-Chia HsuThe near infrared optical properties of arsenic ion-implanted GaAs (GaAs:As+) with different dosages are investigated using Fourier transform infrared spectroscopy. The band edge absorption coefficient and the band gap energy of GaAs:As+ increases from 6.2×103... (Read more)
- 662. J. Appl. Phys. 89, 6294 (2001) , “Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy”, P. KrispinDeep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy are investigated by deep-level transient Fourier spectroscopy. Depth-resolved distributions of hole traps are measured in as-grown and annealed heterojunctions in order to identify the defects,... (Read more)
- 663. J. Appl. Phys. 89, 6272 (2001) , “Evidence for shallow acceptors in GaN”, D. C. Reynolds, D. C. Look, and B. JogaiTwo low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted as longitudinal optical-phonon replicas of free excitons, donor-bound excitons, or acceptor-bound excitons, are reinterpreted as acceptor-bound excitons (A0X's) collapsing to... (Read more)
- 664. J. Appl. Phys. 89, 6189 (2001) , “Fine structure on the green band in ZnO”, D. C. Reynolds, D. C. Look, and B. JogaiAn emission band at 2.4 eV, called the green band, is observed in most ZnO samples, no matter what growth technique is used. Sometimes this band includes fine structure, which consists mainly of doublets, repeated with a longitudinal-optical-phonon-energy spacing (72 meV). We have developed a... (Read more)
- 665. J. Appl. Phys. 89, 6183 (2001) , “Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples”, T. Monteiro, J. Soares, and M. R. CorreiaEr-related luminescence near 1.54 µm (~805 meV) is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green... (Read more)
- 666. J. Appl. Phys. 89, 6105 (2001) , “Chemical vapor deposition and deep level analyses of 4H-SiC(110)”, Tsunenobu Kimoto, Toshiyuki Yamamoto, Zhi Ying Chen, Hiroshi Yano, and Hiroyuki MatsunamiSpecular 4H-SiC layers have been homoepitaxially grown on 4H-SiC(110), parallel to the c axis (0001" align="middle">), by chemical vapor deposition at 1500 °C. An x-ray diffraction analysis has revealed that a lattice-mismatch strain between n epilayers and... (Read more)
- 667. J. Appl. Phys. 89, 61 (2001) , “Preferential ion scattering from 6H-SiC: Identification of the substitutional site of the implanted Ga impurities”, M. Satoh, Y. Nakaike, and K. KuriyamaThe substitutional site of the implanted Ga impurity in (100)-oriented 6H-SiC has been investigated using the preferential scattering effect of He ions. The Si and C monoatomic strings are preferentially observed by the angular scans across 100" align="middle"> axial channels parallel to (110)... (Read more)
- 668. J. Appl. Phys. 89, 6002 (2001) , “Weak hyperfine interaction of E centers in gamma and beta irradiated silica”, S. Agnello, R. Boscaino, and F. M. GelardiWe report on the effects of photon (γ) and electron (β) irradiation in a dose range extending from 100 to 5×109 Gy in a variety of silica samples studied by electron paramagnetic resonance. The E centers and a weak intensity satellite signal of their... (Read more)
- 669. J. Appl. Phys. 89, 5991 (2001) , “Charge states of divacancies in self-implanted doped Si”, S. Szpala and P. J. SimpsonThe charge states of divacancies induced by 5 MeV self-implantation of doped silicon were investigated by positron annihilation methods. For low doping concentrations, results were found to be in agreement with the predictions of Fermi statistics. For the case of heavily boron-doped silicon... (Read more)
- 670. J. Appl. Phys. 89, 5961 (2001) , “Effect of C and B sequential implantation on the B acceptors in 4H–SiC”, Yoshitaka NakanoWe have systematically investigated the effect of C and B sequential coimplantation on B-related acceptors and deep levels in 4HSiC using thermal admittance spectroscopy. By increasing the concentration of coimplanted C, the density of deep levels decreased and was completely suppressed for a... (Read more)
- 671. J. Appl. Phys. 89, 4917 (2001) , “Electron spin resonance study of defects in Si1–xGex alloy nanocrystals embedded in SiO2 matrices: Mechanism of luminescence quenching”, Kimiaki Toshikiyo, Masakazu Tokunaga, and Shinji TakeokaDangling bond defects in Si1xGex alloy nanocrystals (nc-Si1xGex) as small as 4 nm in diameter embedded in SiO2 thin films were studied by electron spin resonance (ESR), and the effects of the... (Read more)
- 672. J. Appl. Phys. 89, 47 (2001) , “Identification of electron and hole traps in KH2PO4 crystals”, N. Y. Garces, K. T. Stevens, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to characterize a hole trap and several electron traps in single crystals of potassium dihydrogen phosphate (KH2PO4 or KDP). The paramagnetic charge states of these centers are produced by ionizing radiation (e.g., x rays or a... (Read more)
- 673. J. Appl. Phys. 89, 4570 (2001) , “Boron penetration in p-channel metal–oxide–semiconductor field-effect transistors enhanced by gate ion-implantation damage”, Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Tada, Hiroshi Arimoto, and Kei HoriuchiWe demonstrated that ion-implantation damage in gate SiO2-enhanced boron penetration in p-channel metaloxidesemiconductor devices, easily enhances boron diffusion in SiO2 by ten times or more. This article describes the effectiveness of using high-temperature... (Read more)
- 674. J. Appl. Phys. 89, 4470 (2001) , “Electron paramagnetic resonance studies of Mn2+ ions in β-Ga2O3 single crystal”, I. G. Kim, T. H. Yeom, and S. H. LeeA Mn2 + ion-doped β-Ga2O3 single crystal was grown by using a floating zone method. By employing an X-band electron paramagnetic resonance (EPR) spectrometer, Mn2 + EPR spectra were recorded at room temperature. The rotation patterns in the... (Read more)
- 675. J. Appl. Phys. 89, 4407 (2001) , “Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy”, J. H. Kim, S. J. Jo, J. W. Kim, and J.-I. SongDeep levels in Si-doped In0.49Ga0.51P grown by compound-source molecular beam epitaxy (MBE) have been investigated by deep level transient spectroscopy. In0.49Ga0.51P samples were grown by compound-source MBE with V/III ratios of 4, 10, and 17. Depending... (Read more)
- 676. J. Appl. Phys. 89, 4310 (2001) , “Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon”, P. K. GiriLow-temperature photoluminescence (PL) spectroscopy, in conjunction with transmission electron microscopy (TEM) and optical microscopy (OM) have been carried out to investigate the origin of radiative recombination from various extended defects that evolve during high-temperature processing of... (Read more)
- 677. J. Appl. Phys. 89, 4301 (2001) , “Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals”, Katsuhiko Nakai, Yoshiharu Inoue, Hideki Yokota, Atsushi Ikari, Jun Takahashi, Akiyoshi Tachikawa, Kouichi Kitahara, Yasumitsu Ohta, and Wataru OhashiOxygen precipitate behavior of nitrogen-doped Czochralski-grown silicon (CZ-Si) crystals is investigated. It is found that nitrogen doping enhances oxygen precipitation after heat treatment. The oxygen precipitate volume density in nitrogen-doped crystals after heat treatment does not change... (Read more)
- 678. J. Appl. Phys. 89, 4289 (2001) , “Shallow thermal donors in nitrogen-doped silicon”, V. V. Voronkov, M. Porrini, P. Collareta, M. G. Pretto, and R. ScalaSilicon crystals doped with nitrogen from the melt contain shallow thermal donors (STDs) detected both optically and electrically. Annealing samples at 600 and 650 °C results in a saturated STD concentration that depends on the nitrogen concentration approximately by a square-root law. This... (Read more)
- 679. J. Appl. Phys. 89, 4263 (2001) , “Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP”, Aurangzeb Khan and Masafumi YamaguchiDirect recombination enhanced annealing of the radiation-induced defect H2 in p InGaP has been observed by deep level transient spectroscopy (DLTS). Detailed analysis of the annealing data at zero and reverse bias shows that annealing rates are independent of the defect charge state or this... (Read more)
- 680. J. Appl. Phys. 89, 3606 (2001) , “A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams”, Akira Uedono, Makoto Muramatsu, and Tomohiro UbukataVacancy-type defects introduced by the carburization of Si were studied by means of monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation were measured for Si substrates with carbon films at temperatures between 298 and 1473 K. The line-shape parameter S,... (Read more)
- 681. J. Appl. Phys. 89, 3195 (2001) , “Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment”, S. M. Myers, A. F. Wright, G. A. Petersen, W. R. Wampler, C. H. Seager, M. H. Crawford, and J. HanThe diffusion and release of H and its uptake from the gas phase are modeled for Mg-doped, wurtzite GaN using formation energies and vibration frequencies from the density-function theory. Comparison is made with rates of deuterium release and uptake measured by nuclear-reaction analysis of... (Read more)
- 682. J. Appl. Phys. 89, 3156 (2001) , “Dependence of ion implantation: Induced defects on substrate doping”, Kei Kanemoto, Fuminobu Imaizumi, Tatsufumi Hamada, Yukio Tamai, and Akira NakadaThe characteristics of an ion implantation-induced defect in a silicon substrate are investigated. This defect is considered to be a complex of a point defect and a substrate dopant atom. The experiments are conducted by focusing on the dependence of the substrate dopant species (phosphorus and... (Read more)
- 683. J. Appl. Phys. 89, 1942 (2001) , “Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films”, W. K. Choi, L. P. Lee, S. L. Foo, S. Gangadharan, N. B. Chong, and L. S. TanAn oxidation study of plasma-enhanced chemical vapor deposited (PECVD) and rf sputtered hydrogenated amorphous silicon carbide (a-Si1xCx:H) films was carried out using the infrared (IR) and electron spin resonance (ESR) techniques.... (Read more)
- 684. J. Appl. Phys. 89, 1713 (2001) , “Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization”, P. Stallinga and H. L. GomesElectrical measurements have been performed on poly[2-methoxy, 5 ethyl (2 hexyloxy) paraphenylenevinylene] in a pn junction with silicon. These included currentvoltage measurements, capacitancevoltage measurements, capacitancetransient spectroscopy, and admittance... (Read more)
- 685. J. Appl. Phys. 89, 165 (2001) , “Thermodynamic analysis of hole trapping in SiO2 films on silicon”, G. Boureau, S. Carniato, and N. CapronA thermodynamic approach based on the existence of a local equilibrium is used to evaluate the temperature dependence of the number of defects responsible for hole trapping (oxygen vacancies transformed into E centers) near the SiSiO2 interface. This approach... (Read more)
- 686. J. Appl. Phys. 89, 1070 (2001) , “Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN”, A. BellPhotoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperature and ambient has on annealed molecular beam epitaxy grown GaN. Significant differences induced by the different annealing conditions occur in the PL spectra in the 3.424 eV region as well as the... (Read more)
- 687. Appl. Phys. Lett. 77, 969 (2000) , “Strong photoluminescence of Sn-implanted thermally grown SiO2 layers”, L. Rebohle, J. von Borany, and W. SkorupaThe photoluminescence (PL) and PL excitation (PLE) properties of Sn-implanted SiO2 layers thermally grown on crystalline Si have been investigated and compared with those from Ge- and Si-implanted SiO2 layers. In detail, the violet PL of Sn-implanted SiO2 layers is... (Read more)
- 688. Appl. Phys. Lett. 77, 878 (2000) , “Sulfur: A potential donor in diamond”, D. SaadaWe performed first-principle calculations of substitutional sulfur in diamond, in the neutral (S0) and charged states. The energy levels induced by sulfur in diamond are calculated to be 0.15 and 0.5 eV from the bottom of the conduction band, for S0 and the singly ionized state... (Read more)
- 689. Appl. Phys. Lett. 77, 82 (2000) , “Origin of hexagonal-shaped etch pits formed in (0001) GaN films”, S. K. Hong and T. YaoWe report the origin of hexagonal-shaped etch pits generally observed by conventional wet etching processes on (0001) GaN-based films based on the investigation with transmission electron microscopy on GaN films after being etched with molten KOH. The origin of hexagonal-shaped etch pits is... (Read more)
- 690. Appl. Phys. Lett. 77, 702 (2000) , “Observation of EL2 and additional deep levels at low temperature in an AlGaAs/GaAs multiple-quantum-well structure”, Y. F. ZhangUsing a YAG:Nd laser as a pump source, the properties of electroabsorption in Stark geometry AlGaAs/GaAs multiple-quantum-well a photorefractive structure are studied at low temperature. When the temperature decreases from 160 to 120 K, the electroabsorption demonstrates the characteristics of both... (Read more)
- 691. Appl. Phys. Lett. 77, 696 (2000) , “Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition”, P. N. K. Deenapanray, H. H. Tan, and C. JagadishDefects created in rapid thermally annealed (RTA) SiO2-capped epitaxial GaAs layers grown by metal-organic chemical vapor deposition have been investigated by deep level transient spectroscopy. RTA introduced four electron traps S1 (Ec0.23 eV), S2... (Read more)
- 692. Appl. Phys. Lett. 77, 690 (2000) , “Identification of vacancy charge states in diffusion of arsenic in germanium”, E. Vainonen-Ahlgren, T. Ahlgren, J. Likonen, S. Lehto, and J. KeinonenDiffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The... (Read more)
- 693. Appl. Phys. Lett. 77, 4322 (2000) , “Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si”, F. Schiettekatte, S. Roorda, R. Poirier, M. O. Fortin, S. Chazal, and R. HéliouThe areal density of extended defects in P-implanted and annealed Si is observed to increase with ion dose to the power 8. A simple model based on Poisson statistics applied to point defects created during ion implantation shows that such a dependence corresponds to enhanced stability of... (Read more)
- 694. Appl. Phys. Lett. 77, 4220 (2000) , “Properties of latent interface-trap buildup in irradiated metal–oxide–semiconductor transistors determined by switched bias isothermal annealing experiments”, Aleksandar B. Jaksic, Momcilo M. Pejovic, and Goran S. RisticIsothermal annealing experiments with switched gate bias have been performed to determine the properties of the latent interface-trap buildup during postirradiation annealing of metaloxidesemiconductor transistors. It has been found that a bias-independent process occurs until the start... (Read more)
- 695. Appl. Phys. Lett. 77, 4010 (2000) , “Gettering of Co in Si by high-energy B ion-implantation and by p/p+ epitaxial Si”, J. L. Benton, T. Boone, D. C. Jacobson, and C. S. RaffertyDetection and gettering of Co contamination in processed Si is an important issue in integrated circuit fabrication. In this work, Co was intentionally introduced into Si by ion implantation, and its diffusion monitored by secondary ion mass spectroscopy. The surface layer recombination lifetime in... (Read more)
- 696. Appl. Phys. Lett. 77, 3956 (2000) , “Precipitation of nanometer scale Zn crystalline particles in ZnO–B2O3–SiO2 glass during electron irradiation”, Nan Jiang, Jianrong Qiu, and John SilcoxIn this letter, we report precipitation of nanometer scale Zn crystalline particles in Zn borosilicate glass induced by 100 keV electron irradiation. Nanometer Zn crystalline particles precipitate rapidly in the glass under high intensity electron irradiation. A double ionization mechanism is... (Read more)
- 697. Appl. Phys. Lett. 77, 3932 (2000) , “Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp /2”, R. Krause-Rehberg, F. Börner, and F. RedmannVacancy-type defects were studied after high-energy self-implantation of Si and subsequent rapid thermal annealing by means of a depth-resolution enhanced positron beam technique. Two different types of open-volume defects were found at a depth of Rp/2 and... (Read more)
- 698. Appl. Phys. Lett. 77, 376 (2000) , “Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon”, Hiroshi Takeno and Ken SunakawaThe influence of boron (B), arsenic (As), and antimony (Sb) on oxygen diffusivity at 500800 °C was investigated in heavily doped Czochralski silicon wafers with resistivities below 0.02 Ω cm. The oxygen diffusivity was determined from the outdiffusion profile measured by secondary... (Read more)
- 699. Appl. Phys. Lett. 77, 3598 (2000) , “Thermal stability of copper precipitates in silicon”, Scott A. McHugo and C. FlinkThe dissolution of copper precipitates in Czochralski silicon has been studied with synchrotron-based x-ray fluorescence. Copper has been introduced and allowed to precipitate at oxygen precipitates and growth-related stacking faults. The dissolution of copper precipitates is monitored after... (Read more)
- 700. Appl. Phys. Lett. 77, 3188 (2000) , “Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism”, H. Bracht and N. A. StolwijkWe report diffusion experiments of implanted boron (B) in nitrogen-doped 4H- and aluminum-doped 6H-SiC which were performed at temperatures between 1700 and 1800 °C. Transient enhanced B diffusion caused by implantation damage was effectively suppressed by annealing of the B-implanted samples at... (Read more)
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