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- 1201. Appl. Phys. Lett. 70, 496 (1997) , “Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation”, G. Ghislotti and B. NielsenPositron annihilation spectroscopy (PAS) is used to study Si-rich SiO2 samples prepared by implantation of Si (160 keV) ions at doses in the range 3 × 10163 × 1017 cm2 and subsequent thermal annealing at high temperature (up to 1100... (Read more)
- 1202. Appl. Phys. Lett. 70, 478 (1997) , “Luminescence, absorption, and site symmetry of Ce activated SrGa2S4 phosphors”, W. L. Warren, K. Vanheusden, M. A. Rodriguez, C. H. Seager, and D. R. TallantCe activated SrGa2S4 blue emitting phosphors were examined using electron paramagnetic resonance and x-ray diffraction to determine the local environment and oxidation state of the Ce ion. Photothermal deflection and photoluminescence spectroscopies were applied to determine... (Read more)
- 1203. Appl. Phys. Lett. 70, 432 (1997) , “The ring-hexavacany in silicon: A stable and inactive defect”, S. K. Estreicher and J. L. HastingsMolecular dynamics simulations as well as ab initio and near ab initio Hartree-Fock calculations in crystalline silicon predict that the configuration of the hexavacancy that has a hexagonal ring missing from the crystal is remarkably stable. The energetics imply that it does form and... (Read more)
- 1204. Appl. Phys. Lett. 70, 369 (1997) , “Postgrowth hydrogen treatments of nonradiative defects in low-temperature molecular beam epitaxial Si”, W. M. Chen, I. A. Buyanova, W.-X. Ni, G. V. Hansson, and B. MonemarInfluence of postgrowth hydrogen treatments on nonradiative recombination centers in undoped and B-doped Si epilayers, grown by molecular beam epitaxy at low temperatures, are studied by optical detection of magnetic resonance. Hydrogen passivation of the dominant nonradiative defects in undoped Si... (Read more)
- 1205. Appl. Phys. Lett. 70, 3597 (1997) , “Photoluminescence study of implantation dose and dose-rate dependence of Si doping of GaAs”, M. Kotani, M. Zafar Iqbal, and Y. MakitaPhotoluminescence spectroscopy is used to investigate some of the recently reported effects of implantation dose and dose rate on the electrical activation of Si dopant in GaAs. Two new luminescence bands are observed to emerge in our spectra with the increasing Si dose at doses (~ 2 ×... (Read more)
- 1206. Appl. Phys. Lett. 70, 357 (1997) , “Carbon–hydrogen complexes in vapor phase epitaxial GaN”, Gyu-Chul YiCarbonhydrogen complexes in undoped and Mg-doped epitaxial GaN films have been investigated using Fourier transform infrared spectroscopy. Infrared absorption peaks in the Mg-doped material were observed at 2853, 2923, and 2956 cm 1. The absorption peaks are attributed to the... (Read more)
- 1207. Appl. Phys. Lett. 70, 3525 (1997) , “The dissolution behavior of the void defects by hydrogen annealing in Czochralski grown silicon crystals”, K. Nakamura, T. Saishoji, and J. TomiokaThe annihilation of grown-in defects by hydrogen annealing have been explained as the dissolution of oxygen precipitates, because it has been generally thought that grown-in defects in Czochralski silicon crystals are gigantic oxygen precipitates. However, it is necessary to re-examine the mechanism... (Read more)
- 1208. Appl. Phys. Lett. 70, 348 (1997) , “Nanosecond time-resolved emission spectroscopy from silicon implanted and annealed SiO2 layers”, A. Pifferi, P. Taroni, A. Torricelli, and G. ValentiniPhotoluminescence decay curves and nanosecond time-gated spectra were measured from silicon implanted SiO2 layers after thermal annealing. Different ion fluences and annealing times were tested. Three components emitting blue-green light with lifetimes of about 0.4, 2, and 10 ns were... (Read more)
- 1209. Appl. Phys. Lett. 70, 3425 (1997) , “Ion implantation induced swelling in 6H-SiC”, R. Nipoti, E. Albertazzi, M. Bianconi, R. Lotti, G. Lulli, and M. CerveraIon implantation induced surface expansion (swelling) of 6H-SiC was investigated through the measurement of the step height between implanted and unimplanted areas. The samples were irradiated at room temperature with 500 keV Al+ ions in the dose range 1.25 × 10143... (Read more)
- 1210. Appl. Phys. Lett. 70, 3392 (1997) , “Indium diffusion in n-type gallium arsenide”, W. M. Li and R. M. CohenDiffusion of indium markers at T = 900 °C have been measured in undoped and Te-doped GaAs epilayers grown by organometallic vapor phase epitaxy. The diffusivity was found to be a linear function of electron concentration over the range n = 2 × 10171.5 ×... (Read more)
- 1211. Appl. Phys. Lett. 70, 3380 (1997) , “Measurement of single interface trap capture cross sections with charge pumping”, N. S. SaksA technique has been developed using charge pumping to determine electron and hole capture cross sections of individual interface traps in small silicon metaloxidesemiconductor transistors. Values for both cross sections are 1016 cm2 for the particular trap... (Read more)
- 1212. Appl. Phys. Lett. 70, 3374 (1997) , “Carrier trapping due to Fe3 + / Fe2 + in epitaxial InP”, D. SöderströmTime-resolved photoluminescence studies were performed on epitaxially grown InP either doped with iron or with iron and sulphur to gain information on the carrier trapping characteristics of Fe3+/Fe2+. The carrier trapping time was found to be dependent on both the iron and... (Read more)
- 1213. Appl. Phys. Lett. 70, 3362 (1997) , “Studies of Mn valence conversion and oxygen vacancies in La1 – xCaxMnO3 – y using electron energy-loss spectroscopy”, Z. L. Wang, J. S. Yin, and Y. D. JiangUsing the white line intensities, electron energy-loss spectroscopy in a transmission electron microscope has been employed to characterize the valence conversion and oxygen vacancies in La1 xCaxMnO3 y. For a nominal doping... (Read more)
- 1214. Appl. Phys. Lett. 70, 3332 (1997) , “Interstitial defects in silicon from 1–5 keV Si + ion implantation”, Aditya Agarwal and Tony E. HaynesExtended defects from 5-, 2-, and 1-keV Si+ ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3 × 1014 cm 2 and annealing temperatures from 750 to 900 °C. Despite the proximity of the surface,... (Read more)
- 1215. Appl. Phys. Lett. 70, 3284 (1997) , “Electrical characterization of partially relaxed InxGa1 – xAs/GaAs multiple quantum well structures”, C. R. Moon, In Kim, Jeong Seok Lee, and Byung-Doo ChoeElectronic properties of partially relaxed InxGa1 xAs/GaAs multiple quantum well (MQW) structures are investigated using capacitancevoltage (CV) profiling and deep level transient spectroscopy (DLTS). As the In composition becomes... (Read more)
- 1216. Appl. Phys. Lett. 70, 3281 (1997) , “Transient enhanced diffusion of Sb and B due to MeV silicon implants”, D. J. Eaglesham, T. E. Haynes, H.-J. Gossmann, D. C. Jacobson, P. A. Stolk, and J. M. PoateWe measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si + ion implants at very high doses (1016 cm 2). We expect the near-surface region of these implants to be vacancy rich, and we... (Read more)
- 1217. Appl. Phys. Lett. 70, 3131 (1997) , “Temperature dependence of the photoquenching of EL2 in semi-insulating GaAs”, A. Alvarez, J. Jiménez, M. A. González, and L. F. SanzA model of the temperature behavior of the photoquenching of EL2 in semi-insulating GaAs is presented. The thermal emission of a hole trapped on an actuator level accounts for the very low photoquenching efficiency above 85 K. This effect is presented in terms of a set of rate equations that... (Read more)
- 1218. Appl. Phys. Lett. 70, 3002 (1997) , “The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si”, S. Libertino, J. L. Benton, D. C. Jacobson, D. J. Eaglesham, and J. M. PoateWe compare the defect complexes generated in crystalline Si by electron irradiation and ion implantation, using irradiation fluences which deposit the same total energy in nuclear collisions. Deep level transient spectroscopy was used to monitor both vacancy-type (e.g., divacancies) and... (Read more)
- 1219. Appl. Phys. Lett. 70, 2723 (1997) , “Positron annihilation in ZnSe layers grown on GaAs: Zinc vacancies and drift in the electric field at the ZnSe/GaAs interface”, L. Liszkay, C. Corbel, and P. HautojärviWe used a slow positron beam to investigate the depth dependence of the positronelectron pair momentum distribution in ZnSe layers grown on a GaAs substrate. We report evidence that positrons annihilate in lattice in undoped ZnSe and at vacancies in heavily n-type ZnSe. It is also... (Read more)
- 1220. Appl. Phys. Lett. 70, 2574 (1997) , “Effect of nitrogen incorporation on electrical properties of boron-doped diamond films”, S. Sonoda, J. H. Won, H. Yagi, A. Hatta, T. Ito, and A. HirakiThe effect of a small amount of nitrogen incorporated in chemical vapor deposited diamond films on their electrical properties was studied. Upgrading the purity of CH4 gas from the conventional ultra-high purity to the grade with no detection of nitrogen resulted in improvement of... (Read more)
- 1221. Appl. Phys. Lett. 70, 252 (1997) , “Investigation of CxSi defects in C implanted silicon by transmission electron microscopy”, P. WernerBuried CxSi layers were produced by high-energy implantation of carbon into CZ silicon. The depth distribution of carbon, the morphology of the buried layers, as well as the precipitation of C were investigated as functions of rapid thermal annealing between 700 and 1300 °C,... (Read more)
- 1222. Appl. Phys. Lett. 70, 2395 (1997) , “Optical absorption and light-induced charge transport of Fe2+ in BaTiO3”, A. Mazur, O. F. Schirmer, and S. MendricksIron doped barium titanate was grown and reduced at various temperatures. Using optical absorption and electron paramagnetic resonance (photo-EPR) simultaneously, a wide absorption band at ~ 2.1 eV due to Fe2+ is established. The light-induced charge transport between Fe2+/3+... (Read more)
- 1223. Appl. Phys. Lett. 70, 2274 (1997) , “Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy”, S. D. Setzler, M. Moldovan, Zhonghai Yu, T. H. Myers, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate singly ionized selenium vacancy VSe+" align="middle"> centers in ZnSe epilayers grown by molecular beam epitaxy (MBE). The study included undoped and nitrogen-doped films. Spectra taken at 8 K and 9.45 GHz, as... (Read more)
- 1224. Appl. Phys. Lett. 70, 2165 (1997) , “Type conversion in irradiated silicon diodes”, Stephen J. Taylor, Masafumi Yamaguchi, Ming-Ju Yang, and Mitsuru ImaizumiWe have observed conversion from p- to n-type of the base layer of n + \ p \ p+ silicon diodes irradiated with more than roughly 5 × 1016 cm2 1 MeV electrons. Annealing for 15 min at 200 °C results in a recovery of... (Read more)
- 1225. Appl. Phys. Lett. 70, 1983 (1997) , “Deep levels and persistent photoconductivity in GaN thin films”, C. H. Qiu and J. I. PankovePhotocurrent decay in GaN thin films was studied in the time span from a few seconds to several days. The persistent photoconductivity (PPC) behavior was observed not only in Mg-doped p-type GaN films but also in undoped n-type GaN films. The photoconductivity spectra and the... (Read more)
- 1226. Appl. Phys. Lett. 70, 191 (1997) , “Porous silicon structure studied by nuclear magnetic resonance”, D. Petit, J.-N. Chazalviel, F. Ozanam, and F. DevreuxWe present a nuclear-magnetic-resonance (NMR) study of the structure of porous silicon. Cross-polarizationmagic-angle-spinning 29Si NMR shows that the silicon crystalline structure is preserved in porous silicon and that there are three protonated silicon species at the surface,... (Read more)
- 1227. Appl. Phys. Lett. 70, 1876 (1997) , “Gettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon”, B. Shen, X. Y. Zhang, K. Yang, P. Chen, R. Zhang, Y. Shi, and Y. D. ZhengGettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current technique and transmission electron microscopy. It is found that Fe impurities only precipitate on Frank partial dislocations bounding stacking faults when... (Read more)
- 1228. Appl. Phys. Lett. 70, 1858 (1997) , “Electron paramagnetic resonance of nitrogen pairs and triads in 6H-SiC: Analysis and identification”, C. F. Young, K. Xie, and E. H. PoindexterA study of electron paramagnetic resonance (EPR) of nitrogen-doped 6H-SiC is reported here. By use of both first- and second-harmonic EPR detection, the predicted spectral fingerprints for nitrogen pairs and triads were found at low temperatures. The pair spectrum was present in the second... (Read more)
- 1229. Appl. Phys. Lett. 70, 1831 (1997) , “Gallium self-diffusion in gallium phosphide”, Lei Wang, J. A. Wolk, L. Hsu, and E. E. HallerGa self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of 69Ga and 71Ga between isotopically pure GaP epilayers which are grown by molecular beam... (Read more)
- 1230. Appl. Phys. Lett. 70, 176 (1997) , “Damage evolution and surface defect segregation in low-energy ion-implanted silicon”, P. J. Bedrossian, M.-J. Caturla, and T. Diaz de la RubiaWe have combined computer simulations and atomic-resolution tunneling microscopy to investigate the kinetics of defect migration during annealing of ion implanted Si(111)-7 × 7. Using atomically-clean and flat surfaces as sinks for bulk point defects introduced by the irradiation, we observe... (Read more)
- 1231. Appl. Phys. Lett. 70, 1724 (1997) , “Compensating defects in heavily nitrogen-doped zinc selenide: A photoluminescence study”, M. Moldovan, S. D. Setzler, T. H. Myers, L. E. Halliburton, and N. C. GilesPhotoluminescence (PL) from a heavily nitrogen-doped ZnSe epilayer grown by molecular beam epitaxy was studied as a function of excitation wavelength, power density, and temperature. Also, the time decay of the PL emission was measured. Detailed analysis of the PL data indicates that the deep broad... (Read more)
- 1232. Appl. Phys. Lett. 70, 1659 (1997) , “Stimulated far-infrared emission from copper-doped germanium crystals”, G. SirmainWe have detected stimulated far-infrared emission from copper-doped germanium single crystals. By varying the magnetic field between 1 and 2.3 T, we have achieved emission in the range of 70120 cm 1. Laser action was observed for crystals with a copper acceptor concentration... (Read more)
- 1233. Appl. Phys. Lett. 70, 1584 (1997) , “New interpretation of the dominant recombination center in platinum doped silicon”, J.-U. Sachse, E. Ö. Sveinbjörnsson, W. Jost, and J. WeberThe midgap level in platinum doped n-type silicon, which was proposed to be the dominant recombination center, is identified as a platinum-hydrogen complex. Hydrogenation of the samples is achieved by wet-chemical etching at room temperature. Defect profiles, determined by deep level... (Read more)
- 1234. Appl. Phys. Lett. 70, 1572 (1997) , “Spatial variations in oxygen precipitation in silicon after high temperature rapid thermal annealing”, M. Pagani, R. J. Falster, G. R. Fisher, G. C. Ferrero, and M. OlmoSpatial variations of oxygen precipitation have been studied in silicon wafers submitted to rapid thermal annealing (RTA) in nitrogen ambients at a temperature above 1150 °C prior to a two-step precipitation treatment. The samples submitted to high temperature preannealing show a consistent... (Read more)
- 1235. Appl. Phys. Lett. 70, 1390 (1997) , “Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates”, Q.-Y. Tong, K. Gutjahr, S. Hopfe, and U. GöseleSi, Ge, SiC, and diamond samples were implanted with H2+" align="middle"> at 120160 keV with 5.0 × 1016 ions/cm2 (corresponding to 1.0 × 1017 H+ ions/cm2) and annealed at various temperatures to introduce... (Read more)
- 1236. Appl. Phys. Lett. 70, 1272 (1997) , “Paramagnetic susceptibility of semiconducting CdF2:In crystals: Direct evidence of the negative-U nature of the DX-like center”, S. A. Kazanskii and A. I. RyskinParamagnetic susceptibility κpara of CdF2 crystals with bistable In centers is measured in the temperature range T=4300 K. For crystals cooled in the dark down to liquid helium temperature, κpara is determined by the trace Mn2 + ... (Read more)
- 1237. Appl. Phys. Lett. 70, 1146 (1997) , “Effects of phosphorus doping on boron transient enhanced diffusion in silicon”, M. B. Huang, T. W. Simpson, and I. V. MitchellThe effects of phosphorus predoping on transient enhanced diffusion (TED) of boron, ion implanted into silicon, were studied using secondary ion mass spectroscopy (SIMS). Boron ions of 40 keV energy were implanted to a dose of 3 × 1014 cm2 into Si(100), which had... (Read more)
- 1238. Appl. Phys. Lett. 70, 1014 (1997) , “Low temperature photoluminescence measurements on boron- and hydrogen-implanted 6H–SiC”, C. Peppermüller and R. HelbigWe investigated the low temperature (T < 2 K) photoluminescence (LTPL) emission of 6HSiC samples after implantation of either boron or boron together with hydrogen. After implantation of boron and annealing at 1700 °C, we detected new LTPL emission at 4205 Å. After... (Read more)
- 1239. J. Appl. Phys. 82, 899 (1997) , “Persistent photoconductivity in n-type GaN”, H. M. Chen and Y. F. ChenResults of photoconductivity measurements in undoped n-type and Se-doped GaN epitaxial thin films are presented. Similar to the photoluminescence spectra, the photoconductivity also shows a broad yellow band centered around 2.2 eV. It is found that persistent photoconductivity (PPC) does... (Read more)
- 1240. J. Appl. Phys. 82, 813 (1997) , “Configurational transformation of an Er center in GaAs:Er,O under hydrostatic pressure”, R. A. Hogg, K. Takahei, and A. TaguchiAn optical spectroscopic study of Er-related luminescence in GaAs:Er,O under hydrostatic pressure is reported. The application of pressure results in new Er-related centers becoming optically active under host photoexcitation. Two new sets of 4I13/2"... (Read more)
- 1241. J. Appl. Phys. 82, 688 (1997) , “Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature”, P. M. Mooney, L. Tilly, C. P. D'Emic, J. O. Chu, F. Cardone, F. K. LeGoues, and B. S. MeyersonTwo shallow hole traps dominate the deep level transient spectroscopy (DLTS) data for strain-relaxed Si0.7Ge0.3 layers grown on Si(100) by ultrahigh vacuum chemical vapor deposition at temperatures 560 °C. The trap energy levels are at Ev + 0.06 and... (Read more)
- 1242. J. Appl. Phys. 82, 6346 (1997) , “Hydrogen passivation of nitrogen in 6H–SiC”, B. TheysN-doped 6HSiC wafers have been annealed in hot hydrogen for two doping levels, corresponding to n- (n ~ 1017 cm 3) and n+-type (n ~ 1019 cm 3) material. Electron spin resonance shows little... (Read more)
- 1243. J. Appl. Phys. 82, 609 (1997) , “Study of damage induced by room-temperature Al ion implantation in Hg0.8Cd0.2Te by x-ray diffuse scattering”, P. O. Renault, A. Declémy, P. Lévêque, and C. FayouxIon-implantation is a widely used doping technique in IIVI semiconductors. Nevertheless, ion-implantation damage has to be better understood to properly control this process. In order to investigate the implantation-induced defects in such compounds, room-temperature implantations of 320 keV... (Read more)
- 1244. J. Appl. Phys. 82, 5758 (1997) , “Radiation induced formation of color centers in PbWO4 single crystals”, M. Nikl and K. NitschThe changes in the absorption spectra induced by Co60 irradiation and high temperature annealing was studied for selected PbWO4 crystals. Based on radiation and annealings induced absorption spectra, four color centers are proposed, which could be responsible for shaping the... (Read more)
- 1245. J. Appl. Phys. 82, 5526 (1997) , “The effect of an asymmetric band of localized deep donors on the electronic transport of high-purity n-type InP”, R. BenzaquenWe have investigated the effect of the shape of a band of localized deep donors on the electronic transport of three high-purity n-type InP epilayers. A model accounting for a broad asymmetric band of localized deep donors or complexes of unknown origin, centered 167 meV below the conduction... (Read more)
- 1246. J. Appl. Phys. 82, 5339 (1997) , “Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing”, Hisayoshi Itoh, Takeshi Ohshima, Yasushi Aoki, Koji Abe, Masahito Yoshikawa, and Isamu NashiyamaDefects introduced in epitaxially grown cubic silicon carbide (3C-SiC) by implantation of nitrogen (N2 + " align="middle">) and aluminum ions (Al + ) at a wide temperature range from room temperature to 1200 °C were studied using electron spin resonance (ESR),... (Read more)
- 1247. J. Appl. Phys. 82, 5327 (1997) , “Nitrogen and aluminum implantation in high resistivity silicon carbide”, Deborah Dwight and Mulpuri V. RaoIn this article, the results on N and Al implantations into undoped high-resistance and vanadium doped semi-insulating bulk 6H-SiC are reported for the first time. The N implants were performed at 700 °C and the Al implants at 800 °C to create n- and p-type layers,... (Read more)
- 1248. J. Appl. Phys. 82, 5185 (1997) , “Harnessing reverse annealing phenomenon for shallow p-n junction formation”, L. Y. Krasnobaev and J. J. CuomoMonocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which... (Read more)
- 1249. J. Appl. Phys. 82, 5167 (1997) , “p–n and p–n–p junction arrays in CuInSe2 crystals: Cathodoluminescence and capacitance study”, G. A. Medvedkin, M. M. Sobolev, and S. A. SolovjevMicrostructures in p-CuInSe2 single crystals tailored by a strong electric field have been studied using the methods of local cathodoluminescence, electron-beam-induced current (EBIC), capacitancevoltage (CV) characteristics, and deep-level transient... (Read more)
- 1250. J. Appl. Phys. 82, 5144 (1997) , “Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer”, A. D. Lan, B. X. Liu, and X. D. BaiThe SiO2 layers thermally grown on Si wafers were implanted by 130 keV Si ions at liquid nitrogen temperature to a dose of 1 × 1017 ions/cm2. From the as-implanted samples, a visible photoluminescence band centered around 2.0 eV was observed. After... (Read more)
- 1251. J. Appl. Phys. 82, 5138 (1997) , “Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices”, W. L. Warren and C. H. SeagerTransmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly... (Read more)
- 1252. J. Appl. Phys. 82, 4994 (1997) , “Optical and electrical characterization of nitrogen ion implanted ZnSSe/p-GaAs (100)”, H. Hong, W. A. Anderson, J. Haetty, A. Petrou, E. H. Lee, H. C. Chang, M. H. Na, H. Luo, J. Peck, and T. J. MountziarisNitrogen ions were implanted into ZnSxSe1 x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a... (Read more)
- 1253. J. Appl. Phys. 82, 4945 (1997) , “Hydrogen-oxygen-vacancy complexes in Czochralski-grown silicon crystal”, H. Hatakeyama and M. SuezawaWe studied the process of generation and some properties of shallow donors generated by annealing a hydrogen-doped Czochralski-grown silicon crystal after electron irradiation. Hydrogen was doped by annealing specimens at 1200 °C in hydrogen atmosphere followed by quenching. Specimens were... (Read more)
- 1254. J. Appl. Phys. 82, 4457 (1997) , “4f-shell configuration of Yb in InP studied by electron spin resonance”, T. Ishiyama and K. MurakamiWe have performed electron spin resonance (ESR) measurements on Yb-doped n-type and p-type InP layers epitaxially grown by metalorganic chemical vapor deposition. ESR spectra of Yb3 + (4f13) were observed in both n-type and p-type samples.... (Read more)
- 1255. J. Appl. Phys. 82, 4412 (1997) , “Deep electron states in n-type Al-doped ZnS1 – xTex grown by molecular beam epitaxy”, Liwu Lu, Weikun Ge, I. K. Sou, Y. Wang, J. Wang, Z. H. Ma, W. S. Chen, and G. K. L. WongCapacitancevoltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1 xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the... (Read more)
- 1256. J. Appl. Phys. 82, 4408 (1997) , “Electrical properties of silicon and beryllium doped (AlyGa1 – y)0.52In0.48P”, Stephen P. Najda, Alistair Kean, and Geoffrey DugganThe electrical properties of silicon and beryllium doped (AlyGa1 y)0.52In0.48P grown by gas source molecular beam epitaxy were studied. Unintentionally doped (GaIn)P has a n-type background concentration of 5.1 ×... (Read more)
- 1257. J. Appl. Phys. 82, 4236 (1997) , “Investigation of the x-ray storage phosphors Cs2NaYF6:Pr3 + or Ce3 + ”, Th. Pawlik and J.-M. SpaethWe present Cs2NaYF6:Ce3 + or Pr3 + as new x-ray storage phosphors. The radiation damage centers upon x irradiation were investigated using magneto-optical and magnetic resonance spectroscopy. F centers are the photostimulable electron trap centers. For... (Read more)
- 1258. J. Appl. Phys. 82, 4223 (1997) , “Compensation implants in 6H–SiC”, Andrew Edwards, Deborah N. Dwight, and Mulpuri V. RaoIn this work, we have performed Si and C isoelectronic implantations in n-type and vanadium (V) implantations in p-type 6HSiC to obtain highly resistive regions. The compensation is achieved by the lattice damage created by the Si and C implantations and the chemically... (Read more)
- 1259. J. Appl. Phys. 82, 419 (1997) , “Red luminescence in phosphorous-doped chemically vapor deposited diamond”, J. te Nijenhuis, S. M. Olsthoorn, W. J. P. van Enckevort, and L. J. GilingLuminescence studies have been performed on phosphorous-doped diamond films deposited by hot-filament chemical vapor deposition. A broad luminescence band, centered around 1.9 eV is revealed, in the cathodo luminescence spectra of homoepitaxial and polycrystalline films, whereas the blue... (Read more)
- 1260. J. Appl. Phys. 82, 4124 (1997) , “Detection of the metastable state of the EL2 defect in GaAs”, J. C. Bourgoin and T. NeffatiUsing a classical photocapacitance technique, we have transformed the well-known EL2 defects, related to the As antisite in GaAs, into their metastable states. Using the capacitance, we have monitored the temperature dependence of the electron occupancy of these metastable states at thermal... (Read more)
- 1261. J. Appl. Phys. 82, 3828 (1997) , “Deep level of iron-hydrogen complex in silicon”, T. Sadoh, K. Tsukamoto, A. Baba, D. Bai, A. Kenjo, and T. TsurushimaDeep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of EV + 0.31 and EV + 0.41 eV. The trap of... (Read more)
- 1262. J. Appl. Phys. 82, 3791 (1997) , “Hydrogen migration in diamond-like carbon films”, E. Vainonen, J. Likonen, T. Ahlgren, P. Haussalo, and J. KeinonenProperties of physical vapor deposited diamondlike carbon (DLC) films and the migration of hydrogen in H + and 4He + ion implanted and hydrogen co-deposited DLC films have been studied. Measurements utilizing Rutherford backscattering spectrometry showed that the... (Read more)
- 1263. J. Appl. Phys. 82, 3630 (1997) , “Addendum: Deep emission band at GaInP/GaAs interface”, S. H. Kwok and P. Y. YuWe have performed high pressure photoluminescence studies of the deep emission band in GaInP/GaAs quantum well. Our results suggest that this peak is related to donor-acceptor pair transitions in the GaAs well. ©1997 American Institute of Physics.... (Read more)
- 1264. J. Appl. Phys. 82, 3346 (1997) , “The EL2-like metastable defect and the n- to p-type transition in silicon planar-doped GaAs”, M. I. N. da Silva, A. G. de Oliveira, G. M. Ribeiro, R. M. Rubinger, J. A. Corrêa, and M. V. Baeta MoreiraThrough photo-Hall measurements at temperatures below about 120 K, we have observed the presence of a deep donor defect, with characteristics similar to those of the EL2 center, in planar-doped GaAs samples grown by molecular beam epitaxy at 300 °C. We have shown that this EL2-like center can... (Read more)
- 1265. J. Appl. Phys. 82, 3232 (1997) , “Vacancy production by 3 MeV electron irradiation in 6H-SiC studied by positron lifetime spectroscopy”, Atsuo Kawasuso, Hisayoshi Itoh, Takeshi Ohshima, Koji Abe, and Sohei OkadaThe vacancy production in 6H-SiC by 3 MeV electron irradiation at room temperature was studied using positron lifetime spectroscopy combined with annealing experiments. It was found that the trapping rates of positrons in vacancies increased linearly with the fluence in the initial stage of... (Read more)
- 1266. J. Appl. Phys. 82, 3152 (1997) , “The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals”, K. Kamitani, M. Grimsditch, J. C. Nipko, and C.-K. LoongThe complete sets of elastic constants of 4H and 6H silicon carbide single crystals were determined by Brillouin scattering. The elastic constants of 6H SiC are C11 = 501 ± 4, C33 = 553 ± 4, C44 = 163 ± 4, C12 =... (Read more)
- 1267. J. Appl. Phys. 82, 3125 (1997) , “The potential formation of O2 - " align="middle"> on an oxidizing porous silicon surface a source of oxygen atoms”, James L. Gole and Frank P. DudelEvidence is presented for the formation of O2 - " align="middle"> on a porous silicon surface. The O2 - " align="middle"> present on a porous silicon surface may contribute to the infrared spectrum of air oxidized surfaces in the range encompassing ~ 11001150... (Read more)
- 1268. J. Appl. Phys. 82, 2969 (1997) , “Properties of electron traps in In1 – xGaxAsyP1 – y grown on GaAs0.61P0.39”, Ho Ki Kwon and Byung-Doo ChoeThe properties of electron traps in nominally undoped In1 xGaxAsyP1 y layers grown on GaAs0.61P0.39 substrates by liquid phase epitaxy were investigated by deep level transient spectroscopy... (Read more)
- 1269. J. Appl. Phys. 82, 2603 (1997) , “Electromodulation reflectance of low temperature grown GaAs”, T. M. Hsu, J. W. Sung, and W. C. LeeWe have studied low temperature grown GaAs by electromodulation reflectance spectroscopy for growth temperatures between 200 and 320 °C. The reflectance spectra can be observed only when the concentration of the arsenic antisite defect is lower than 3.4 × 1019 cm ... (Read more)
- 1270. J. Appl. Phys. 82, 2476 (1997) , “Electron nuclear double resonance of stable Rh centers in solution-grown NaCl single crystals”, M. Zdravkova, H. Vrielinck, F. Callens, and E. BoesmanUnlike the photographically important silver halides, large NaCl single crystals can be grown from solution. In such NaCl crystals, with doping comparable to practical AgCl and AgBr microcrystals, three stable Rh centers were detected and studied by electron paramagnetic resonance (EPR) and electron... (Read more)
- 1271. J. Appl. Phys. 82, 2365 (1997) , “Electrical properties of n-GaSe single crystals doped with chlorine”, G. Micocci, A. Serra, and A. TeporeHall-effect and space-charge-limited-current (SCLC) measurements were performed on Cl-doped GaSe single crystals grown by the BridgmannStockbarger method. The temperature dependence of the free electron density shows the characteristics of a partially compensated n-type semiconductor.... (Read more)
- 1272. J. Appl. Phys. 82, 2156 (1997) , “Minority-carrier lifetime damage coefficient of irradiated InP”, B. M. Keyes and R. K. AhrenkielMinority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5 × 1015 and 1.3 × 1017 cm 3) and p-type (2.5 × 1017 cm 3) InP have... (Read more)
- 1273. J. Appl. Phys. 82, 210 (1997) , “Defects in metamorphic InxAl1 – xAs (x < 0.4) epilayers grown on GaAs substrates”, Jia-Lin Shieh, Mao-Nan Chang, Yung-Shih Cheng, and Jen-Inn ChyiDefects in Si-doped InxAl1 xAs (0 < x < 0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1... (Read more)
- 1274. J. Appl. Phys. 82, 1970 (1997) , “Off-axis extra lines in powder pattern electron paramagnetic resonance of Cr3 + in YAlO3”, R. R. Rakhimov, A. L. Wilkerson, G. B. Loutts, and H. R. RiesPowder sample electron paramagnetic resonance (EPR) spectrum of Cr3 + ions in YAlO3 crystals contains off-axis extra lines, which do not belong to the principal X, Y,and Z components of the fine structure. Orientation dependence of the EPR spectrum of... (Read more)
- 1275. J. Appl. Phys. 82, 192 (1997) , “Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal”, Amlan MajumdarThe reactivation kinetics of passivated boron acceptors in hydrogenated silicon during zero bias annealing in the temperature range of 65130 °C are reported. For large annealing times and high annealing temperatures, the reactivation process follows second-order kinetics and is rate... (Read more)
- 1276. J. Appl. Phys. 82, 1812 (1997) , “Atomic level stress and light emission of Ce activated SrS thin films”, W. L. Warren, K. Vanheusden, D. R. Tallant, and C. H. SeagerWe find that the Ce3 + ion in polycrystalline sputtered SrS:Ce thin films resides in a distorted octahedral environment, as opposed to the cubic host environment. Using electron paramagnetic resonance and x-ray diffraction analysis, we show that the degree of axial distortion is related... (Read more)
- 1277. J. Appl. Phys. 82, 1696 (1997) , “A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching”, L. Goubert, R. L. Van Meirhaeghe, P. Clauws, F. Cardon, and P. Van DaeleThe electrical effects of reactive ion etching (RIE) of p-InP by CH4:H2 are investigated. By using optical deep-level transient spectroscopy, several deep-level defects could be detected. The main defect (E3) is found to be a donor with an energy level at... (Read more)
- 1278. J. Appl. Phys. 82, 1423 (1997) , “Deep level transient spectroscopy of CdS/CdTe thin film solar cells”, M. A. LourençoDeep levels in polycrystalline n-CdS/p-CdTe photovoltaic structures have been studied by deep level transient spectroscopy (DLTS). The results were obtained from cells which have undergone different post-deposition treatment (as-deposited, heat treated, and heat treated in the presence... (Read more)
- 1279. J. Appl. Phys. 82, 137 (1997) , “The infrared vibrational absorption spectrum of the Si–X defect present in heavily Si doped GaAs”, M. J. Ashwin and R. C. NewmanHeavily silicon doped GaAs grown by molecular beam epitaxy using a single gallium isotope source (69Ga) has been studied by infrared absorption to reveal localized vibrational modes (LVMs) of Si complexes. The structure observed close to 367 cm 1 is the same as that... (Read more)
- 1280. J. Appl. Phys. 82, 1208 (1997) , “Carbon-related defects in carbon-doped GaAs by high-temperature annealing”, Hiroshi Fushimi and Kazumi WadaThe behavior of defects in heavily carbon-doped GaAs induced by high-temperature annealing has systematically been studied. It is found that carbon-related defects decrease hole concentration and mobility, carbon concentration on the As sublattices and recombination lifetime, in terms of... (Read more)
- 1281. J. Appl. Phys. 82, 120 (1997) , “Evolution from point to extended defects in ion implanted silicon”, J. L. Benton, S. Libertino, P. Kringhøj, D. J. Eaglesham, and J. M. PoateWe present a quantitative study of the evolution of point defects into clusters and extended defects in ion-implanted Si. Deep level transient spectroscopy (DLTS) measurements are used to identify and count the electrically active defects in the damaged region produced by Si ion implantation at... (Read more)
- 1282. J. Appl. Phys. 82, 1053 (1997) , “Ion-beam annealing of electron traps in n-type Si by post-H + implantation”, A. ItoThe effects of post-H + implantation on electron traps that are induced by P + implantation (300 keV, 1 × 109 cm 2) has been studied by deep-level transient spectroscopy. H + implantation is performed at room temperature to a... (Read more)
- 1283. J. Appl. Phys. 81, 905 (1997) , “Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique”, Junyong KangThe 4.2 K photoluminescence (PL) spectra of undoped bulk 100" align="middle"> InP grown by the liquid-encapsulated vertical Bridgman (LEVB) techniques are characterized by three kinds of recombination peaks. A peak exhibited near band-gap energy is attributed to the recombination of bound... (Read more)
- 1284. J. Appl. Phys. 81, 78 (1997) , “Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon”, G. Z. Pan and K. N. TuA study of end-of-range (EOR) dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 was carried out by using transmission electron microscopy. Two kinds of post-implantation anneals were performed, furnace anneals at 850 °C and rapid thermal anneals at 1000 °C.... (Read more)
- 1285. J. Appl. Phys. 81, 7612 (1997) , “Passivation, structural modification, and etching of amorphous silicon in hydrogen plasmas”, S. A. McQuaid, S. Holgado, J. Garrido, J. Martínez, and J. PiquerasAtomic hydrogen from plasma discharges dissolves in silicon previously amorphized by ion implantation (aSi) in the form of SiH bonds, giving rise to infrared (IR) absorption at ~ 1990 cm 1 and causing partial activation of implanted dopants. Passivation of aSi... (Read more)
- 1286. J. Appl. Phys. 81, 7604 (1997) , “Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production”, R. Fornari, A. Zappettini, E. Gombia, and R. MoscaAs-grown Fe-doped semiconducting InP wafers (residual carrier concentration 1015 cm3, estimated iron concentration 58 × 1015 cm3) were converted to semi-insulating, with high resistivity and good mobility, when annealed under... (Read more)
- 1287. J. Appl. Phys. 81, 7567 (1997) , “Effect of the carbon acceptor concentration on the photoquenching and following enhancement of the photoacoustic signals of semi-insulating GaAs”, A. Fukuyama, Y. Morooka, Y. Akashi, K. Yoshino, K. Maeda, and T. IkariThe spectral and the time dependent piezoelectric photoacoustic (PPA) measurements under the continuous light illumination were carried out at 85 K to investigate nonradiative recombination processes involving EL2 defect levels in carbon concentration controlled and not intentionally doped... (Read more)
- 1288. J. Appl. Phys. 81, 7533 (1997) , “Broad photoluminescence band in undoped AlxGa1 – xAs grown by organometallic vapor phase epitaxy”, H. Kakinuma and M. AkiyamaWe have studied the 77 K photoluminescence (PL) of undoped-AlxGa1 xAs (0.21x0.83) grown by organometallic vapor phase epitaxy. A deep broad (DB) PL band is found at 1.61.7 eV at a range of x from 0.21 to 0.63, with a maximum intensity at... (Read more)
- 1289. J. Appl. Phys. 81, 7362 (1997) , “Interface states in In0.5Ga0.5P/AlxGa1 – xAs heterostructures grown by liquid phase epitaxy”, Yong-Hoon Cho and Byung-Doo ChoeWe report the observation of deep traps localized near the heterointerface of the InGaP/AlGaAs structure grown by liquid-phase epitaxy. In the case of low-quality InGaP/AlGaAs heterojunctions containing interface traps, the shape of capacitance-voltage (C-V) carrier profiles is affected by... (Read more)
- 1290. J. Appl. Phys. 81, 7295 (1997) , “Structures and defects in arsenic-ion-implanted GaAs films annealed at high temperatures”, Wen-Chung Chen and C.-S. ChangThe structures and defects are studied in arsenic-ion-implanted GaAs(As + GaAs) films annealed at temperatures higher than 600 °C by using transmission electron microscopy, deep level transient spectroscopy, temperature-dependent conductance, and photoluminescence. The estimated... (Read more)
- 1291. J. Appl. Phys. 81, 6948 (1997) , “Optical properties of α-irradiated and annealed Si-doped GaAs”, H. W. Kunert and D. J. BrinkThe influence of irradiation by α particles and subsequent isochronal annealing on n-GaAs doped with silicon, was investigated. Photoluminescence (PL) studies revealed the formation of an induced radiation center at 1.486 eV. In addition to the PL investigation we also employed... (Read more)
- 1292. J. Appl. Phys. 81, 6822 (1997) , “A model of hole trapping in SiO2 films on silicon”, P. M. LenahanWe demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers. ©1997 American Institute of Physics.... (Read more)
- 1293. J. Appl. Phys. 81, 6767 (1997) , “Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germanium”, A. Blondeel and P. ClauwsDeep levels in n-type high-purity (HP) detector grade germanium are studied using optical deep level transient spectroscopy (ODLTS). In this technique, optical injection (using light of above band gap energy) from the back ohmic contact together with a suitable sample configuration results in... (Read more)
- 1294. J. Appl. Phys. 81, 6651 (1997) , “Neutron irradiation defects in gallium sulfide: Optical absorption measurements”, F. J. Manjón, A. Segura, and V. MuñozGallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their... (Read more)
- 1295. J. Appl. Phys. 81, 6635 (1997) , “Phosphorus and boron implantation in 6H–SiC”, Mulpuri V. Rao and Jason A. GardnerPhosphorus and boron ion implantations were performed at various energies in the 50 keV4 MeV range. Range statistics of P + and B + were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature... (Read more)
- 1296. J. Appl. Phys. 81, 631 (1997) , “A predictive model for transient enhanced diffusion based on evolution of {311} defects”, Alp H. Gencer and Scott T. DunhamIt has been observed that {311} defects form, grow, and eventually dissolve during annealing of Si-implanted silicon wafers. The fact that for subamorphizing silicon implants {311} defects initially contain the full net dose of excess interstitials, and that the time scale for dissolution of these... (Read more)
- 1297. J. Appl. Phys. 81, 6205 (1997) , “Electrical and photoluminescence properties of CuInSe2 single crystals”, J. H. Schön, E. Arushanov, Ch. Kloc, and E. BucherElectrical and photoluminescence measurements have been carried out on CuInSe2 single crystals. The observed temperature dependence of the Hall coefficient in n-type CuInSe2 single crystals is explained in assuming the existence of an impurity band. The values of the... (Read more)
- 1298. J. Appl. Phys. 81, 6200 (1997) , “Trapping centres in Cl-doped GaSe single crystals”, G. Micocci, A. Serra, and A. TeporeThermally stimulated current (TSC) and photoconductivity were studied as a function of temperature and light intensity in an n-GaSe single crystal doped with chlorine. TSC measurements were performed in the range 80450 K, and the results were analyzed by different methods. An electron... (Read more)
- 1299. J. Appl. Phys. 81, 6056 (1997) , “Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures”, U. Egger, M. Schultz, P. Werner, O. Breitenstein, T. Y. Tan, and U. GöseleInterdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs... (Read more)
- 1300. J. Appl. Phys. 81, 524 (1997) , “Neutron transmutation doping as an experimental probe for CuZn in ZnSe”, E. D. Wheeler and Jack L. BooneNuclear transmutation is employed in an investigation of copper doping in ZnSe. Copper atoms are introduced at zinc sites in ZnSe after crystal growth processes are complete. Since the copper dopants are introduced after growth, far from equilibrium, they are less able to form complexes with other... (Read more)
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