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- 1001. Appl. Phys. Lett. 83, 934-936 (2003) , “Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique”, Lin Shao, Xuemei Wang, Irene Rusakova, Hui Chen, and Jiarui LiuTrapping of migrating Si interstitials at substrate/epitaxial interfaces during high-energy Si ion bombardment has been observed. It shows that the interface of Si/Si layer, grown by molecular-beam epitaxy, is a strong sink for self-interstitials during MeV bombardment at room temperature. We... (Read more)
- 1002. Solid State Commun. 132, 333 (2004) , Pergamon Press , “Phase transitions investigation in ZnTe by thermoelectric power measurements at high pressure”, S.V. Ovsyannikov, V.V. ShchennikovThe pressure-induced phase transitions were studied in ZnTe by the thermoelectric power (S) technique. For the high-pressure trigonal phase P3121 cinnabar the large thermopower values S≈+400 correspond to semiconductor hole conductivity. During a transition into the orthorhombic structure Cmcm the value of S dropped by 40–50 times indicating metallic hole conductivity, like in the high pressure phases of other chalcogenides of II Group (HgSe, HgTe, CdTe) with Cmcm structure. In a transient region between the trigonal and orthorhombic phase (especially under decreasing pressure) a novel phase has been observed with a negative value of S. By analogy with other Zn and Cd chalcogenides whose NaCl phases have an electron type of conductivity the phase observed may have a NaCl structure. (Read more)
- 1003. Physica B 344, 190 (2004) , Elsevier , “Thermomagnetic and thermoelectric properties of semiconductors (PbTe, PbSe) at ultrahigh pressures”, S.V. Ovsyannikov, V.V. ShchennikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (LNE, TNE) effects and the Maggi–Reghi–Leduc (MRL) effect were measured on PbTe and PbSe micro-samples at ultrahigh pressures upto 20 GPa. Values of the mobility of charge carriers as well as the scattering parameter were estimated both for the low- and high-pressure phase of PbTe and PbSe. At about 3 GPa, the maxima of both Nernst–Ettingshausen effects and magnetoresistance (MR) (and hence of the mobility of charge carriers μ), attributed to the gapless state of PbTe and PbSe were established. The TNE effect was found to be the largest among the effects measured, while the MRL was hardly visible even at the highest mobility values of the charge carriers. The possibilities for using thermomagnetic effects in micro-device technologies are discussed. (Read more)
- 1004. phys. stat. sol. (c) 1, 3110 (2004) , Wiley InterScience , “Raman spectra of lead chalcogenide single crystals”, S.V. Ovsyannikov, Y.S. Ponosov, V.V. Shchennikov, V.E. MogilenskikhRaman spectra of single crystals of lead chalcogenides (PbTe, PbSe, PbS) were studied at room temperature and ambient pressure. The structure of spectra for all compounds is rather similar showing the bands in one- and two-phonon range. Possible spectra identification is discussed. (© 2004... (Read more)
- 1005. phys. stat. sol. (b) 241, 3242 (2004) , WILEY-VCH , “Influence of P-T pre-treatment on thermopower of Czochralski-grown silicon at high pressure”, V.V. Shchennikov, S.V. Ovsyannikov, A. Misiuk, V.V. Shchennikov JrFor the first time the thermoelectric power of high-pressure phases of Czochralski-grown silicon (Cz-Si) single crystals has been investigated. From the dependence on pressure of the thermopower the phase transitions in Si have been established. The influence of gas pressure (up to 1.5 GPa) and... (Read more)
- 1006. Phys. Rev. Lett. 92, 015504 (2004) , “Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass”, Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo HosonoThe role of mobile interstitial oxygen atoms (O0) in defect processes in oxides is demonstrated by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass. Superstoichiometric O0 was created by F2 laser photolysis of the... (Read more)
- 1007. Phys. Rev. Lett. 92, 017402 (2004) , “Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes”, S. J. Sque, R. Jones, J. P. Goss, and P. R. BriddonThe utility of diamond as an electronic material is compromised by the lack of a suitable shallow donor. Here, ab initio theory is used to investigate the donor levels of substitutional pnictogen (N, P, As, and Sb) and chalcogen (S, Se, and Te) impurities and chalcogen-hydrogen defects in... (Read more)
- 1008. Phys. Rev. Lett. 92, 047602 (2004) , “Overhauser Effect of 67Zn Nuclear Spins in ZnO via Cross Relaxation Induced by the Zero-Point Fluctuations of the Phonon Field”, Hubert Blok, Serguei B. Orlinski, Jan Schmidt, and Pavel G. BaranovHole burning in and displacements of the magnetic-resonance absorption line of the electron spin of the shallow hydrogen-related donor in ZnO are observed upon resonant irradiation with microwaves at 275 GHz and at 4.5 K in a magnetic field of 10 T. These effects arise from an almost complete... (Read more)
- 1009. Phys. Rev. Lett. 92, 047603 (2004) , “Probing the Wave Function of Shallow Li and Na Donors in ZnO Nanoparticles”, Serguei B. Orlinskii, Jan Schmidt, Pavel G. Baranov, Detlev M. Hofmann, Celso de Mello Donegá, and Andries MeijerinkElectron paramagnetic resonance and electron nuclear double resonance (ENDOR) experiments on ZnO nanoparticles reveal the presence of shallow donors related to interstitial Li and Na atoms. The shallow character of the wave function is evidenced by the multitude of 67Zn ENDOR lines and... (Read more)
- 1010. Phys. Rev. Lett. 92, 255504 (2004) , “Stable Fourfold Configurations for Small Vacancy Clusters in Silicon from ab initio Calculations”, D. V. Makhov and Laurent J. LewisUsing density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and pentavacancies in silicon. These new configurations consist of combinations of a ring hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain... (Read more)
- 1011. Phys. Rev. Lett. 93, 055504 (2004) , “Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells”, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergThe formation mechanism and properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation is investigated using density functional calculations. We find that boron traps an oxygen dimer to form a bistable defect with a donor level in... (Read more)
- 1012. Phys. Rev. Lett. 93, 055505 (2004) , “Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends”, F. Tuomisto, K. Pennanen, K. Saarinen, and J. SadowskiWe have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga1xMnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite... (Read more)
- 1013. Phys. Rev. B 69, 035210 (2004) , “Evolution of voids in Al+-implanted ZnO probed by a slow positron beam”, Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. OhdairaUndoped ZnO single crystals were implanted with aluminum ions up to a dose of 1015Al+/cm2. Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters,... (Read more)
- 1014. Phys. Rev. B 69, 045201 (2004) , “Hydrogenation of the dominant interstitial defect in irradiated boron-doped silicon”, N. Yarykin, O. V. Feklisova, and J. WeberThe H3-center with a level at Ev + 0.535 eV is observed in hydrogenated electron-irradiated boron-doped silicon. In samples with boron concentrations of (220)×1015 cm3 the center is the most abundant among all defects detected by... (Read more)
- 1015. Phys. Rev. B 69, 045207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, and Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 1016. Phys. Rev. B 69, 045208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, and Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 1017. Phys. Rev. B 69, 075210 (2004) , “Isoelectronic oxygen-related defect in CdTe crystals investigated using thermoelectric effect spectroscopy”, Salah A. Awadalla, Alan W. Hunt, Kelvin G. Lynn, Howard Glass, Csaba Szeles, and Su-Huai WeiAn oxygen-related defect was studied in nominally undoped CdTe crystals grown by the high pressure Bridgman technique using thermo-electrical effect spectroscopy and first-principles band structure calculations. Based on the linear relationship between the oxygen concentration and the emitted charge... (Read more)
- 1018. Phys. Rev. B 69, 115205 (2004) , “Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si”, V. Ranki, A. Pelli, and K. SaarinenPositron annihilation experiments have been performed to identify defects created by annealing of electron irradiated of heavily As-, P-, and Sb-doped Si samples. We show that the vacancy-donor pairs (V-D1) migrate around 450 K, transforming into... (Read more)
- 1019. Phys. Rev. B 69, 115212 (2004) , “Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance”, Yu. V. Gorelkinskii and G. D. WatkinsThe effect of 2.5 MeV electron irradiation in situ at 4.2 K on the properties of single crystalline ZnO is studied by photoluminescence (PL) and optically detected electron paramagnetic resonance (ODEPR). A new PL band is produced by the irradiation, and several annealing stages are observed... (Read more)
- 1020. Phys. Rev. B 69, 125210 (2004) , “Dissociation of H-related defect complexes in Mg-doped GaN”, O. Gelhausen, M. R. Phillips, E. M. Goldys, T. Paskova, B. Monemar, M. Strassburg, and A. HoffmannPost-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately... (Read more)
- 1021. Phys. Rev. B 69, 125214 (2004) , “Spectroscopic evidence for a N-Ga vacancy defect in GaAs”, H. Ch. Alt, Y. V. Gomeniuk, and B. WiedemannA local vibrational mode occurring at 638 cm1 in nitrogen-rich GaAs bulk crystals and 14N-implanted GaAs layers has been investigated by high-resolution Fourier transform infrared absorption spectroscopy. Measurements on samples coimplanted with 14N and... (Read more)
- 1022. Phys. Rev. B 69, 125217 (2004) , “Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency”, Y. Tokuyama, M. Suezawa, N. Fukata, T. Taishi, and K. HoshikawaWe studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH2, a complex of one self-interstitial (I) and two H atoms. If the IH2 concentration depends on species of... (Read more)
- 1023. Phys. Rev. B 69, 125218 (2004) , “Structure and properties of vacancy-oxygen complexes in Si1–xGex alloys”, V. P. Markevich, A. R. Peaker, J. Coutinho, R. Jones, V. J. B. Torres, S. Öberg, P. R. Briddon, L. I. Murin, L. Dobaczewski, and N. V. AbrosimovThe electronic properties and structure of vacancy-oxygen (VO) complexes in Czochralski-grown Si1xGex crystals (0<x<0.06) have been studied by means of capacitance transient techniques and ab initio modeling. At least three configurations... (Read more)
- 1024. Phys. Rev. B 69, 153202 (2004) , “Divacancy annealing in Si: Influence of hydrogen”, E. V. Monakhov, A. Ulyashin, G. Alfieri, A. Yu. Kuznetsov, B. S. Avset, and B. G. SvenssonWe have performed comparative studies of divacancy (V2) annealing in hydrogenated and nonhydrogenated Si by deep level transient spectroscopy. It is shown that the nonhydrogenated samples demonstrate the formation of divacancy-oxygen (V2O) complex during annealing of... (Read more)
- 1025. Phys. Rev. B 69, 155206 (2004) , “Structure, energetics, and extrinsic levels of small self-interstitial clusters in silicon”, Giorgia M. Lopez and Vincenzo FiorentiniNative defects in Si are of obvious importance in microelectronic device processing. Self-interstitials in particular are known to mediate, in many cases, anomalous impurity diffusion. Here we study the energetics and electronic structure of single, double, and triple self-interstitial clusters in... (Read more)
- 1026. Phys. Rev. B 69, 165206 (2004) , “Structural and vibrational properties of {N,N} pairs and {N,H} complexes in Si”, J. L. McAfee, He Ren, and S. K. EstreicherFirst-principles molecular-dynamics simulations are used to predict the structures and binding energies of interstitial nitrogen Ni, substitutional nitrogen Ns, the Ni-self-interstitial complex, the {Ni,Ni}, {Ni,Ns} =... (Read more)
- 1027. Phys. Rev. B 69, 165215 (2004) , “Boron-hydrogen complexes in diamond”, J. P. Goss, P. R. Briddon, S. J. Sque, and R. JonesBoron in diamond traps hydrogen forming passive Bs-H pairs. Boron trapping two deuterium atoms has been speculated as forming a shallow donor (0.230.34 eV below the conduction band). We present the results of first-principles calculations of boron complexes with 24... (Read more)
- 1028. Phys. Rev. B 69, 193202 (2004) , “Optical and electrical properties of vanadium and erbium in 4H-SiC”, D. Prezzi, T. A. G. Eberlein, J.-S. Filhol, R. Jones, M. J. Shaw, P. R. Briddon, and S. ÖbergLocal-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While... (Read more)
- 1029. Phys. Rev. B 69, 245207 (2004) , “Donor level of bond-center hydrogen in germanium”, L. Dobaczewski, K. Bonde Nielsen, N. Zangenberg, B. Bech Nielsen, A. R. Peaker, and V. P. MarkevichWe apply Laplace deep-level transient spectroscopy (LDLTS) in situ after low-temperature proton implantation into crystalline n-type germanium and identify a deep metastable donor center. The activation energy of the donor emission is ~110 meV when extrapolated to zero electric field.... (Read more)
- 1030. Phys. Rev. B 70, 024105 (2004) , “X- and Q-band ENDOR study of the Fe+(II) center in chlorinated SrCl2:Fe crystals”, D. Ghica, S. V. Nistor, H. Vrielinck, F. Callens, and D. SchoemakerThe 001 axially symmetric Fe+(II) center observed in SrCl2:Fe2+ crystals has been studied by the electron nuclear double resonance (ENDOR) technique in the microwave X and Q bands. This center is produced only in crystals grown in chlorine atmosphere... (Read more)
- 1031. Phys. Rev. B 70, 033204 (2004) , “Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon”, Eisuke Abe, Kohei M. Itoh, Junichi Isoya, and Satoshi YamasakiWe report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29Si and natural abundance Si (natSi) single crystals measured at 8 K. The two-pulse echo decay curves for both samples show... (Read more)
- 1032. Phys. Rev. B 70, 035203 (2004) , “High-resolution local vibrational mode spectroscopy and electron paramagnetic resonance study of the oxygen-vacancy complex in irradiated germanium”, P. Vanmeerbeek, P. Clauws, H. Vrielinck, B. Pajot, L. Van Hoorebeke, and A. Nylandsted LarsenIt was recently discovered that in electron-irradiated germanium doped with oxygen a local vibrational mode occurs at 669 cm1 that could be ascribed to the negatively charged oxygen-vacancy complex (VO). In the 669 cm1 band and in another... (Read more)
- 1033. Phys. Rev. B 70, 115206 (2004) , “Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO”, G. N. Aliev, S. J. Bingham, D. Wolverson, J. J. Davies, H. Makino, H. J. Ko, and T. YaoOptically detected magnetic resonance (ODMR) experiments on epitaxial nitrogen-doped ZnO show spectra due to (i) a shallow donor with the full wurtzite symmetry, (ii) a previously unobserved spin-1/2 center of axial symmetry whose principal axis is tilted slightly away from the crystal c... (Read more)
- 1034. Phys. Rev. B 70, 115210 (2004) , “Possible p-type doping with group-I elements in ZnO”, Eun-Cheol Lee and K. J. ChangBased on first-principles calculations, we suggest a method for fabricating p-type ZnO with group-I elements such as Li and Na. With group-I dopants alone, substitutional acceptors are mostly self-compensated by interstitial donors. In ZnO codoped with H impurities, the formation of... (Read more)
- 1035. Phys. Rev. B 70, 121201(R) (2004) , “Identification of Ga-interstitial defects in GaNyP1–y and AlxGa1–xNyP1–y”, N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, Sukit Limpijumnong, S. B. Zhang, Y. G. Hong, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. YonezuTwo Ga-interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1y and... (Read more)
- 1036. Phys. Rev. B 70, 144111 (2004) , “Identification of Cr3+ centers in Cs2NaAlF6 and Cs2NaGaF6 crystals by EPR and ENDOR paramagnetic resonance techniques”, H. Vrielinck, F. Loncke, F. Callens, P. Matthys, and N. M. KhaidukovChromium-doped Cs2NaAlF6 and Cs2NaGaF6 crystals have been investigated by using the techniques of electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) at X-band (9.5 GHz) and Q-band (34 GHz) frequencies. In both... (Read more)
- 1037. Phys. Rev. B 70, 205201 (2004) , “Interaction of hydrogen with boron, phosphorus, and sulfur in diamond”, E. B. Lombardi, Alison Mainwood, and K. OsuchThe production of n-type doped diamond has proved very difficult. Phosphorus, and possibly sulfur, when in substitutional sites in the lattice, forms a donor which could be used in electronic devices. Boron, which is a relatively shallow acceptor, can be passivated by hydrogen, and it is... (Read more)
- 1038. Phys. Rev. B 70, 205203 (2004) , “Properties and formation mechanism of tetrainterstitial agglomerates in hydrogen-doped silicon”, Teimuraz Mchedlidze and Masashi SuesawaFor the tetrainterstitial agglomerate (I4), four additional silicon (Si) atoms are incorporated in an ordinary unit cell of Si lattice in such a manner that all atoms are four-coordinated and angles between bonds are not disturbed significantly. Microstructure, electrical... (Read more)
- 1039. Phys. Rev. B 70, 205211 (2004) , “Ni-vacancy defect in diamond detected by electron spin resonance”, K. IakoubovskiiTrigonal S = 1 NOL1/NIRIM5 center has been characterized by electron spin resonance (ESR) in nickel and boron doped diamond grown by the high-pressure high-temperature technique. Hyperfine interaction structure has been detected and attributed to six equivalent carbon sites and one Ni site.... (Read more)
- 1040. Phys. Rev. B 70, 205214 (2004) , “Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique”, W. Ulrici and B. ClerjaudIn LEC-grown GaAs:S, two vibrational absorption lines are measured at 2382.2 and 2392.8 cm1 (T = 7 K) and assigned to 11B-H and 10B-H stretching modes. Uniaxial stress experiments reveal that the symmetry of the responsible complex is... (Read more)
- 1041. Phys. Rev. B 70, 235208 (2004) , “Interstitial nitrogen and its complexes in diamond”, J. P. Goss, P. R. Briddon, S. Papagiannidis, and R. JonesNitrogen, a common impurity in diamond, can be displaced into an interstitial location by irradiation. The resultant interstitial defects are believed to be responsible for a range of infrared and electronic transitions that vary in thermal stability, and on the type of diamond. Of particular... (Read more)
- 1042. Phys .Rev. Lett. 92, 178302 (2004) , “Nonvolatile Memory with Multilevel Switching: A Basic Model”, M. J. Rozenberg, I. H. Inoue, and M. J. SánchezThere is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the... (Read more)
- 1043. J. Appl. Phys. 95, 2532 (2004) , “Electrical resistivity of acceptor carbon in GaAs”, A. Ferreira da Silva and I. PepeThe electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm3. Good agreement was obtained between the measured... (Read more)
- 1044. J. Appl. Phys. 95, 3385 (2004) , “Optical investigations on the annealing behavior of gallium- and nitrogen-implanted ZnO”, F. ReussGallium and nitrogen ions have been implanted into ZnO crystals and metal organic vapor phase epitaxy grown ZnO layers. Postimplantation annealing behavior in the temperature range between 200 and 900 °C has been studied by means of Raman scattering and low-temperature photoluminescence. The... (Read more)
- 1045. J. Appl. Phys. 95, 3404 (2004) , “Identification of vacancy–oxygen complexes in oxygen-implanted silicon probed with slow positrons”, M. Fujinami, T. Miyagoe, and T. SawadaDefects and their annealing behavior for low (2×1015/cm2) and high (1.7×1018/cm2) doses of 180 keV oxygen-implanted silicon have been investigated by the coincidence Doppler broadening (CDB) and lifetime measurements in variable-energy positron... (Read more)
- 1046. J. Appl. Phys. 95, 4655 (2004) , “Hydrogen behavior in SiO2 with high density of defects and locally concentrated silicon”, M. Ikeda, M. Nakagawa, R. Mitsusue, S. Kondo, and N. ImanishiUsing ion implantation techniques, we have studied the trapping, detrapping, and diffusion of H in SiO2 containing a high density of defects and a high concentration of excess Si. In SiO2 sample implanted with Si and H, the implanted H moves toward the surface after stopping at... (Read more)
- 1047. J. Appl. Phys. 95, 4728 (2004) , “Electrically active defects in irradiated 4H-SiC”, M. L. David4H-SiC epilayers were irradiated with either protons or electrons and electrically active defects were studied by means of deep level transient spectroscopy. Motion of defects has been found to occur at temperature as low as 350400 K. Indeed, the application of an electric field has been found... (Read more)
- 1048. J. Appl. Phys. 95, 4752 (2004) , “Electrically active defects induced by sputtering deposition on silicon: The role of hydrogen”, F. Volpi and A. R. PeakerWe present a study of the electrically active defects produced in p-type silicon crystals underneath a titanium layer deposited by sputtering to form a Schottky contact. The defects were investigated by Deep Level Transient Spectroscopy and free carrier profiles were determined by... (Read more)
- 1049. J. Appl. Phys. 95, 57 (2004) , “Vacancy-related defect distributions in 11B-, 14N-, and 27Al-implanted 4H–SiC: Role of channeling”, M. S. JansonThe defect distributions in 11B-, 14N-, and 27Al-implanted epitaxial 4HSiC are studied using monoenergetic positron beams. At least three types of defects are needed to account for the Doppler broadening annihilation spectra and two of the defects are... (Read more)
- 1050. J. Appl. Phys. 95, 6092 (2004) , “Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation”, D. Nobili, S. Solmi, and M. FerriCarrier density and mobility measurements were performed on heavily arsenic-doped silicon-on-insulator specimens after 2 MeV implantation of Si+ ions. It is found that implantation induces a marked reduction of the electron density, which increases with the concentration of active dopant,... (Read more)
- 1051. J. Appl. Phys. 95, 69 (2004) , “Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes”, Souvick Mitra and Mulpuri V. RaoPlanar n+p and p+n junction diodes, fabricated in 4H-SiC epitaxial layers using a double-implantation technology (a deep-range acceptor followed by a shallow-range donor implantation and vice versa), are characterized using capacitance... (Read more)
- 1052. J. Appl. Phys. 95, 8092 (2004) , “Determination of functional center local environment in copper-modified Pb[Zr0.54Ti0.46]O3 ceramics”, Rüdiger-A. EichelFerroelectric copper(II)-modified polycrystalline Pb[Zr0.54Ti0.46]O3 ceramics with a dopant concentration of 0.25 mol % were investigated by means of electron paramagnetic resonance and hyperfine sublevel correlation spectroscopy. Special emphasis was put on the... (Read more)
- 1053. J. Appl. Phys. 95, 8469 (2004) , “Self-diffusion of 12C and 13C in intrinsic 4H–SiC”, M. K. Linnarsson and M. S. JansonSelf-diffusion of carbon (12C and 13C) in low-doped (intrinsic) 4HSiC has been studied using secondary ion mass spectrometry. A two layer 13C enriched structure with 13C/12C ratios of 0.01 and 0.1, respectively, have been prepared by... (Read more)
- 1054. J. Appl. Phys. 95, 913 (2004) , “Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam”, A. UedonoPositron annihilation was used to probe vacancy-type defects in electroplated Cu films. Doppler broadening spectra of the annihilation radiation for Cu films deposited on samples with a Ta(20 nm)/SiO2(100 nm)/Si structure were measured with a monoenergetic positron beam. For an... (Read more)
- 1055. J. Appl. Phys. 96, 1341 (2004) , “Assignment of deep levels causing yellow luminescence in GaN”, C. B. Soh, S. J. Chua, and H. F. LimThe deep levels in GaN associated with yellow luminescence transitions have been investigated using photoluminescence, Hall measurements, and deep level transient spectroscopy (DLTS). Hall measurements on Si-doped GaN show the presence of donor levels at ~18, ~35, and ~70 meV, which are respectively... (Read more)
- 1056. J. Appl. Phys. 96, 1563 (2004) , “Electrical properties of GaSe doped with Er”, Yu-Kuei Hsu and Chen-Shiung ChangMeasurements of the Hall effect and Er-related luminescence were made on Er-doped GaSe. Deep-level transient spectroscopy (DLTS) was also performed. Hall measurements show that hole concentrations of 0.2%, 0.5%, and 1% Er-doped GaSe samples are 1.5×10176×1017... (Read more)
- 1057. J. Appl. Phys. 96, 320 (2004) , “Passivation of double-positioning twin boundaries in CdTe”, Yanfa Yan, M. M. Al-Jassim, and K. M. JonesWe present density-functional total-energy calculations to investigate the passivation effects of impurity elements such as Br, Cl, S, O, H, and Na on double-positioning twin boundaries in CdTe. We find that Br, Cl, S, and O atoms present passivation effects on the boundaries with different degrees,... (Read more)
- 1058. J. Appl. Phys. 96, 3687 (2004) , “Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon”, Daniel MacdonaldThe impact of residual recombination centers after low-energy self-implantation of crystalline silicon wafers and annealing at 900 °C has been determined by bulk carrier lifetime measurements as a function of implant dose. Doses below 1013 cm2 resulted in no... (Read more)
- 1059. J. Appl. Phys. 96, 4909 (2004) , “Deep levels created by low energy electron irradiation in 4H-SiC”, L. Storasta, J. P. Bergman, E. Janzén, and A. HenryWith low energy electron irradiation in the 80250 keV range, we were able to create only those intrinsic defects related to the initial displacements of carbon atoms in the silicon carbide lattice. Radiation induced majority and minority carrier traps were analyzed using capacitance transient... (Read more)
- 1060. J. Appl. Phys. 96, 4960 (2004) , “Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions”, I. O. UsovThe diffusion behavior of boron (B) and nitrogen (N) implanted in 6H and 4H silicon carbide (SiC) samples was investigated using secondary ion mass spectroscopy. The samples were either coimplanted with B and N ions or implanted with each element alone. The annealing was performed at 1700 °C... (Read more)
- 1061. J. Appl. Phys. 96, 530 (2004) , “Properties of arsenic antisite defects in Ga1–xMnxAs”, A. Wolos and M. KaminskaWe report the results of optical absorption measurements on Ga1xMnxAs layers grown by low-temperature molecular beam epitaxy. In the paramagnetic layers grown at very low temperatures (below 250 °C) the experiments reveal an absorption band at 1.2 eV... (Read more)
- 1062. J. Appl. Phys. 96, 6789 (2004) , “The role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes”, Koji KatayamaThe role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes under operation was investigated. The generation rate of microscopic dark spots, which do not correspond to the original stacking faults or threading dislocations in the epilayer, was found to... (Read more)
- 1063. J. Appl. Phys. 96, 747 (2004) , “Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy”, Sung-Yong Chung, Niu Jin, Ryan E. Pavlovicz, and Paul R. BergerDeep-level transient spectroscopy (DLTS) measurements were performed in order to investigate the effects of post-growth heat treatment on deep level defects in Si layers grown by low-temperature molecular-beam epitaxy (LT-MBE) at 320 °C. In the LT-MBE as-grown samples, two dominant... (Read more)
- 1064. Appl. Phys. Lett. 84, 1492-1494 (2004) , “Comparative study of defect energetics in HfO2 and SiO2”, W. L. Scopel, Antônio J. R. da Silva, W. Orellana, and A. FazzioWe perform ab initio calculations, based on density functional theory, for substitutional and vacancy defects in the monoclinic hafnium oxide (m-HfO2) and α-quartz (SiO2). The neutral oxygen vacancies and substitutional Si and Hf defects in HfO2... (Read more)
- 1065. Appl. Phys. Lett. 84, 1576-1578 (2004) , “Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes”, S. Maximenko, S. Soloviev, D. Cherednichenko, and T. SudarshanThe electron-beam-induced current (EBIC) method was employed to investigate the electrical activity of dislocations in silicon carbide Schottky and diffused pn diodes. Dislocations in Schottky diodes appear as dark spots with the EBIC current signal at the dislocations reduced... (Read more)
- 1066. Appl. Phys. Lett. 84, 1683-1685 (2004) , “Optically active erbium–oxygen complexes in GaAs”, J. CoutinhoDensity functional modeling of Er and ErO complexes in GaAs show that Er impurities at the Ga site are not efficient channels for exciton recombination, but decorative O atoms play crucial roles in inhibiting Er precipitation and in creating the necessary conditions for electron-hole capture.... (Read more)
- 1067. Appl. Phys. Lett. 84, 1698-1700 (2004) , “Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen”, Suku Kim, B. S. Kang, and F. RenPt/ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5 V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H2 is introduced into a N2 ambient at 25 °C. The rectifying currentvoltage... (Read more)
- 1068. Appl. Phys. Lett. 84, 1713-1715 (2004) , “EL2-related metastable defects in semi-insulating GaAs”, D. KabirajThermally stimulated current spectroscopy, photoquenching, and photorecovery have been used to reveal the EL2-related metastable defect levels in semi-insulating GaAs. It has been found that one set of metastable levels is directly related to EL2 and the other set is indirectly related to EL2 defect... (Read more)
- 1069. Appl. Phys. Lett. 84, 1859-1861 (2004) , “Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy”, M. Ramsteiner, D. S. Jiang, J. S. Harris, and K. H. PloogNitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E+ transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate... (Read more)
- 1070. Appl. Phys. Lett. 84, 1862-1864 (2004) , “Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si”, G. Impellizzeri, J. H. R. dos Santos, S. Mirabella, and F. PrioloWe have explained the role of fluorine in the reduction of the self-interstitial population in a preamorphized Si layer under thermal treatment. For this purpose, we have employed a B spike layer grown by molecular-beam epitaxy as a marker for the self-interstitial local concentration. The... (Read more)
- 1071. Appl. Phys. Lett. 84, 1889-1891 (2004) , “"Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers”, A. Kvit, A. Karoui, G. Duscher, and G. A. RozgonyiNitrogen effect on nucleation of oxygen precipitates in Czochralski Si has been investigated by transmission electron microscopy, Z-contrast imaging, and electron energy loss spectrometry (EELS). We have examined unusual "umbrella" shape oxygen precipitates in bulk of ingot in... (Read more)
- 1072. Appl. Phys. Lett. 84, 1895-1897 (2004) , “Mechanism of p-type-to-n-type conductivity conversion in boron-doped diamond”, Ying DaiWe report on the role of two boronhydrogen complexes in the conductivity conversion from p-type to n-type in boron-doped diamond samples. The calculated electronic structures of the simulated clusters show that the boronhydrogen complex of hydrogenboron pairs... (Read more)
- 1073. Appl. Phys. Lett. 84, 197-199 (2004) , “Narrow, deep level cathodoluminescence emission from semi-insulating GaAs”, J. K. RadhakrishnanCathodoluminescence investigations on bulk undoped semi-insulating GaAs samples taken from different sources reveal the presence of a deep level emission at 0.9 eV at 77 K, with a narrow full width at half maximum of 8 meV. The temperature-dependent and beam-parameter-dependent studies indicate... (Read more)
- 1074. Appl. Phys. Lett. 84, 2055-2057 (2004) , “Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions”, B. J. Pawlak and R. SurdeanuWe investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and characterization by sheet resistance, secondary-ion mass spectrometry, and spreading-resistance measurement are used to extract detailed... (Read more)
- 1075. Appl. Phys. Lett. 84, 2106-2108 (2004) , “Room-temperature silicon light-emitting diodes based on dislocation luminescence”, V. Kveder, M. Badylevich, E. Steinman, and A. IzotovWe demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity... (Read more)
- 1076. Appl. Phys. Lett. 84, 2277-2279 (2004) , “Passivation of Mn acceptors in GaMnAs”, M. S. Brandt, S. T. B. Goennenwein, T. A. Wassner, F. Kohl, A. Lehner, H. Huebl, T. Graf, and M. StutzmannThe effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (1021 cm3) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to... (Read more)
- 1077. Appl. Phys. Lett. 84, 2349-2351 (2004) , “Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes”, Mariko Suzuki, Hiroaki Yoshida, Naoshi Sakuma, Tomio Ono, and Tadashi SakaiTemperature-dependent currentvoltage (IV), capacitancevoltage (CV) measurements, and frequency-dependent CV measurements have been carried out to investigate electrical properties of phosphorus (P)-doped n-type... (Read more)
- 1078. Appl. Phys. Lett. 84, 2760-2762 (2004) , “Activation mechanism of annealed Mg-doped GaN in air”, Yow-Jon LinIn this study, the activation mechanism of annealed Mg-doped GaN in air and the influence of ambient on activation of Mg-doped GaN were investigated. According to the experimental results, we found that the dissociation of MgGaH, and the formation of hydrogenated gallium vacancies... (Read more)
- 1079. Appl. Phys. Lett. 84, 2841-2843 (2004) , “Structure and electrical activity of rare-earth dopants in GaN”, J.-S. Filhol and R. JonesDensity functional theory is used to investigate Eu, Er, and Tm rare earth (RE) impurities in GaN, paying particular attention to their structure, energetics, and electronic properties. The most stable site is when the RE is located at a Ga substitutional site but none of the defects possess deep... (Read more)
- 1080. Appl. Phys. Lett. 84, 3049-3051 (2004) , “Determination of the ionization energy of nitrogen acceptors in zinc oxide using photoluminescence spectroscopy”, Lijun Wang and N. C. GilesPhotoluminescence spectroscopy of nitrogen-related emissions in ZnO is used to establish the ionization energy of the substitutional nitrogen acceptor. The temperature dependence of the nitrogen-related electron-acceptor (e,A0) emission band has been monitored in as-grown... (Read more)
- 1081. Appl. Phys. Lett. 84, 3064-3066 (2004) , “Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC”, F. Schmid and G. PenslThe annealing behavior of P+ and N+ ions implanted into p-type 4H-SiC epilayers is studied by a temperature-dependent Hall-effect. Detailed investigations reveal that the electrical activation of implanted P+ ions is governed by the site competition effect,... (Read more)
- 1082. Appl. Phys. Lett. 84, 3486-3488 (2004) , “Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire”, S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, and Y. L. WangOptical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50 keV Ga+ focused ion beam in the fluence range of 1×10142×1016 ions cm2 is used for the irradiation... (Read more)
- 1083. Appl. Phys. Lett. 84, 374-376 (2004) , “Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition”, A. Armstrong and A. R. ArehartThe effect of excess C incorporation on the deep level spectrum of n-type GaN grown by metalorganic chemical vapor deposition was investigated. Low-pressure (LP) growth conditions were used to intentionally incorporate excess C compared to atmospheric pressure (AP) growth conditions. GaN... (Read more)
- 1084. Appl. Phys. Lett. 84, 3876-3878 (2004) , “Observation of a Be-correlated donor state in GaN”, F. Albrecht, U. Reislöhner, G. Pasold, C. Hülsen, and W. WitthuhnA Be-related donor level was identified in the band gap of GaN. Thermal admittance spectroscopy (TAS) was combined with the radiotracer principle by applying the radioactive isotope 7Be which was implanted into n-type and p-type GaN. TAS spectra of n-type GaN... (Read more)
- 1085. Appl. Phys. Lett. 84, 3894-3896 (2004) , “H-related defect complexes in HfO2: A model for positive fixed charge defects”, Joongoo Kang, E.-C. Lee, and K. J. ChangBased on first-principles theoretical calculations, we investigate the hydrogenation effect on the defect properties of oxygen vacancies (VO) in HfO2. A defect complex of VO and H behaves as a shallow donor for a wide range of Fermi levels, with a... (Read more)
- 1086. Appl. Phys. Lett. 84, 4514-4516 (2004) , “Doping-level-dependent optical properties of GaN:Mn”, O. Gelhausen, E. Malguth, and M. R. PhillipsThe optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (523×1019 cm3) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption peak at... (Read more)
- 1087. Appl. Phys. Lett. 84, 4574-4576 (2004) , “Paramagnetic NO2 centers in thin γ-irradiated HfO2 layers on (100)Si revealed by electron spin resonance”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) analysis reveals the incorporation of N in (100)Si/HfO2 structures with ultrathin amorphous HfO2 films deposited by chemical vapor deposition (CVD) using Hf(NO3)4 as precursor, through detection, after 60Co... (Read more)
- 1088. Appl. Phys. Lett. 84, 4887-4889 (2004) , “Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry”, M. Rummukainen, J. Oila, A. Laakso, and K. SaarinenPositron annihilation spectroscopy is used to study vacancy defects in GaN grown by molecular-beam epitaxy due to different polar directions and varying stoichiometry conditions during oxygen doping. We show that Ga-polar material is free of compensating Ga vacancies up to [O] = 1018 ... (Read more)
- 1089. Appl. Phys. Lett. 84, 720-722 (2004) , “Isolated nickel impurities in diamond: A microscopic model for the electrically active centers”, R. Larico, L. V. C. Assali, and W. V. M. MachadoWe present a theoretical investigation on the structural and electronic properties of isolated nickel impurities in diamond. The atomic structures, symmetries, formation and transition energies, and hyperfine parameters of isolated interstitial and substitutional Ni were computed using ab... (Read more)
- 1090. Appl. Phys. Lett. 85, 2827-2829 (2004) , “Formation of Ga interstitials in (Al,In)yGa1–yNxP1–x alloys and their role in carrier recombination”, N. Q. Thinh, I. P. Vorona, M. Izadifard, I. A. Buyanova, and W. M. ChenFormation of complex defects involving a Ga interstitial (Gai) in (Al,In)yGa1yNxP1x alloys and their effects on optical quality are studied by photoluminescence (PL) and optically detected magnetic... (Read more)
- 1091. Appl. Phys. Lett. 85, 384-386 (2004) , “Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide”, C. C. Ling, M. K. Lui, S. K. Ma, X. D. Chen, S. Fung, and C. D. BelingAcceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at EV + 34 meV is found... (Read more)
- 1092. Appl. Phys. Lett. 85, 4633-4635 (2004) , “Electrical and optical properties of rod-like defects in silicon”, J. P. Goss and P. R. BriddonSelf-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more... (Read more)
- 1093. Appl. Phys. Lett. 85, 4902-4904 (2004) , “Anomalous energetics and defect-assisted diffusion of Ga in silicon”, Claudio Melis, Giorgia M. Lopez, and Vincenzo FiorentiniWe study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast to B and In, the favored Ga/self-interstitial complex is the tetrahedral interstitial GaT. Thus in the presence of self-interstitials Ga becomes interstitial, and is... (Read more)
- 1094. Appl. Phys. Lett. 85, 943-945 (2004) , “Paramagnetic defects of silicon nanowires”, A. Baumer, M. Stutzmann, and M. S. BrandtThe paramagnetic defects in and on Si nanowires (SiNWs) obtained by oxide-assisted growth were studied by conventional electron spin resonance spectroscopy. For the as-grown nanowires, three different defects were found: Dangling bonds or Pb-centers with g = 2.0065, located... (Read more)
- 1095. Phys. Rev. Lett. 94, 097602 (2005) , “Shallow Donors in Semiconductor Nanoparticles: Limit of the Effective Mass Approximation”, Serguei B. Orlinskii, Jan Schmidt, Edgar J. J. Groenen, Pavel G. Baranov, Celso de Mello Donegá, and Andries MeijerinkThe spatial distribution of the electronic wave function of a shallow, interstitial Li donor in a ZnO semiconductor nanocrystal has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by electron nuclear double resonance... (Read more)
- 1096. Phys. Rev. Lett. 94, 125501 (2005) , “Delocalized Nature of the Edelta[prime]" align="middle"> Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of Edelta[prime]" align="middle"> point defect induced by γ-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR... (Read more)
- 1097. Phys. Rev. Lett. 94, 165501 (2005) , “Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy”, M. Rummukainen, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, and H.-J. L. GossmannPositron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 12 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the... (Read more)
- 1098. Phys. Rev. Lett. 94, 186101 (2005) , “Geometric Characterization of a Singly Charged Oxygen Vacancy on a Single-Crystalline MgO(001) Film by Electron Paramagnetic Resonance Spectroscopy”, Martin Sterrer, Esther Fischbach, Thomas Risse, and Hans-Joachim FreundElectron paramagnetic resonance spectra of singly charged surface oxygen vacancies (F or color centers) formed by electron bombardment on a single-crystalline MgO film under UHV conditions are reported. The embedding of the defect in a well-defined geometrical environment allows not only for... (Read more)
- 1099. Phys. Rev. Lett. 95, 105502 (2005) , “Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond”, M. J. Shaw, P. R. Briddon, J. P. Goss, M. J. Rayson, A. Kerridge, A. H. Harker, and A. M. StonehamOur ab initio calculations of the hyperfine parameters for negatively charged vacancy-hydrogen and nitrogen-vacancy-hydrogen complexes in diamond compare static defect models and models which account for the quantum tunneling behavior of hydrogen. The static models give rise to hyperfine... (Read more)
- 1100. Phys. Rev. Lett. 95, 225502 (2005) , “Evidence for Native-Defect Donors in n-Type ZnO”, D. C. Look, G. C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, S. B. Zhang, and K. NordlundRecent theory has found that native defects such as the O vacancy VO and Zn interstitial ZnI have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory... (Read more)
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