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- 401. J. Appl. Phys. 94, 3069 (2003) , “Proton implantation effects on electrical and luminescent properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe electrical properties, deep level spectra, and microcathodoluminescence (MCL) spectra of p-GaN films implanted with 100 keV protons are reported. Measurable decreases of the MCL intensity began for doses as low as 1012 cm2, while measurable decreases of the... (Read more)
- 402. J. Appl. Phys. 94, 301 (2003) , “Thermally stimulated luminescence from vapor-transport-equilibrated LiTaO3 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonThermally stimulated luminescence (TSL), optical absorption, and electron paramagnetic resonance (EPR) have been used to characterize the emission of ultraviolet light from undoped LiTaO3. The crystals in this study were grown from a congruent melt and then subjected to a... (Read more)
- 403. J. Appl. Phys. 94, 3004 (2003) , “Deep level transient spectroscopic study of neutron-irradiated n-type 6H–SiC”, X. D. Chen, S. Fung, C. C. Ling, and C. D. BelingDeep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6HSiC after neutron irradiation. Deep levels situated at EC0.23, EC0.36/0.44, EC0.50, and... (Read more)
- 404. J. Appl. Phys. 94, 2992 (2003) , “Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers”, M. Lazar, C. Raynaud, D. Planson, and J.-P. ChanteEpilayers of 6H and 4HSiC were Al implanted with various doses to form p-type layers after a postimplantation annealing performed at 1700 °C/30 min. Rutherford backscattering spectrometry in the channeling mode analyses carried out before and after annealing show virgin nonimplanted... (Read more)
- 405. J. Appl. Phys. 94, 2901 (2003) , “The 3838 Å photoluminescence line in 4H-SiC”, A. HenryWe report the results of a study of the origins of the peak near 3838 Å observed in the photoluminescence (PL) spectrum of 4H-SiC. For n+-doped 4H-SiC material, it appears as a broad peak that is shown to be related to high-level nitrogen doping, with an energy position... (Read more)
- 406. J. Appl. Phys. 94, 2895 (2003) , “Proton implantation effects on electrical and recombination properties of undoped ZnO”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, and V. I. VdovinElectrical and optical properties of undoped n-ZnO crystals implanted with 50 keV protons with doses from 5×1013 to 5×1015 cm2 are reported. Proton implantation leads to a decrease of the carrier concentration in the near-surface region, but... (Read more)
- 407. J. Appl. Phys. 94, 2888 (2003) , “Quantitative comparisons of dissolved hydrogen density and the electrical and optical properties of ZnO”, C. H. Seager and S. M. MyersRecent density functional theory calculations indicate that hydrogen is soluble in ZnO, effectively forming a shallow donor state. It has been suggested that these donors are responsible for the large increases in electron concentration seen in ZnO samples annealed at elevated temperatures in... (Read more)
- 408. J. Appl. Phys. 94, 2510 (2003) , “Electron paramagnetic resonance study of electron and hole traps in β-BaB2O4 crystals”, Wei Hong and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate point defects in single crystals of β-BaB2O4 (commonly referred to as BBO). An irradiation with x rays at 77 K produces two dominant EPR spectra, one electronlike and the other holelike. The... (Read more)
- 409. J. Appl. Phys. 94, 2234 (2003) , “Occupation probability for acceptor in Al-implanted p-type 4H–SiC”, Hideharu Matsuura, Koichi Sugiyama, Kazuhiro Nishikawa, Takashi Nagata, and Nobuya FukunagaAl-implanted p-type 4HSiC layers with different implantation and annealing temperatures are formed, and the temperature dependence of the hole concentration p(T) is obtained by Hall-effect measurements. The Al acceptor level in SiC is deep (~180 meV), and its first excited... (Read more)
- 410. J. Appl. Phys. 94, 1965 (2003) , “Magnetic resonance investigation of Mn2+ in ZnO nanocrystals”, Huijuan Zhou, Detlev M. Hofmann, Albrecht Hofstaetter, and Bruno K. MeyerElectron paramagnetic resonance measurements were carried out to probe the structure of Mn2+ in ZnO nanocrystals with different surface conditions, modified by an annealing process. Changes in the spectra by the annealing treatment indicate the existence of three Mn2+ centers.... (Read more)
- 411. J. Appl. Phys. 94, 1647 (2003) , “Defect characterization of ZnBeSe solid solutions by means of positron annihilation and photoluminescence techniques”, F. Plazaola, J. Flyktman, and K. SaarinenDefect characterization of as-grown Zn1xBexSe compound semiconductors was studied by positron lifetime and photoluminescence measurements. We obtain both experimental and theoretical evidence that the bulk lifetime of free positrons decreases linearly with... (Read more)
- 412. J. Appl. Phys. 94, 1485 (2003) , “Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN”, H. K. Cho, C. S. Kim, and C.-H. HongIn n-type GaN films grown on sapphire substrates by metal-organic chemical vapor deposition such as unintentionally GaN and intentionally Si-doped GaN and In-doped GaN, the electron capture behaviors were investigated by deep level transient spectroscopy with various filling pulse durations.... (Read more)
- 413. J. Appl. Phys. 94, 140 (2003) , “Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon”, Jinggang Lu, Magnus Wagener, and George RozgonyiThe effects of grain boundaries (GB) in polycrystalline sheet silicon on impurity gettering and oxygen precipitation were investigated by electron beam induced current (EBIC), deep level transient spectroscopy (DLTS), micro-Fourier-transform infrared spectroscopy (FTIR), and preferential... (Read more)
- 414. J. Appl. Phys. 93, 9659 (2003) , “Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors”, V. Eremin, D. S. Poloskin, E. Verbitskaya, M. P. Vlasenko, and L. S. VlasenkoSpin-dependent recombination (SDR) electron paramagnetic resonance (EPR) spectroscopy is applied for investigation of paramagnetic recombination centers in irradiated silicon pn junction detectors (diodes) formed on float-zone (FZ) silicon wafers. The main radiation defects,... (Read more)
- 415. J. Appl. Phys. 93, 9395 (2003) , “Dislocation loop evolution in ion implanted 4H–SiC”, P. O. Å. Persson and L. Hultman4HSiC epilayers were implanted with 27Al in doses from 1.3×1014 cm2 to 7.8×1014 cm2. Dislocation loop formation after high-temperature annealing was studied by plan-view transmission electron microscopy and... (Read more)
- 416. J. Appl. Phys. 93, 930 (2003) , “Effects of annealing ambient on the formation of compensation defects in InP”, A. H. DengPositron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The... (Read more)
- 417. J. Appl. Phys. 93, 9104 (2003) , “Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy”, Sung-Yong Chung, Niu Jin, Anthony T. Rice, and Paul R. BergerDeep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n+-p junctions... (Read more)
- 418. J. Appl. Phys. 93, 8995 (2003) , “Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals”, T. Monteiro, C. Boemare, and M. J. SoaresWe report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the... (Read more)
- 419. J. Appl. Phys. 93, 8975 (2003) , “Infrared absorption bands associated with native defects in ZnGeP2”, N. C. Giles, Lihua Bai, M. M. Chirila, N. Y. Garces, and K. T. StevensAn optical absorption investigation from 10 to 296 K has been performed on bulk crystals of ZnGeP2 grown by the horizontal-gradient-freeze method. We identify three broad absorption bands in the spectral range from 1 to 4 µm that are due to native defects. At low temperature, a band... (Read more)
- 420. J. Appl. Phys. 93, 8926 (2003) , “Behavior of oxidation-induced stacking faults in annealed Czochralski silicon doped by nitrogen”, Deren Yang, Jia Chu, Jin Xu, and Duanlin QueAfter oxidation at 1150 °C, oxidation-induced stacking faults (OSFs) in nitrogen-doped Czochralski crystal silicon (NCZSi) preannealed at 750 °C for 16 h followed by annealing at 1100 °C were investigated. It was observed that the size of OSFs in NCZSi samples was larger than... (Read more)
- 421. J. Appl. Phys. 93, 753 (2003) , “Formation and passivation kinetics of gold-hydrogen complexes in n-type silicon”, A. ZamoucheReverse- and zero-bias annealing kinetics of Au-related deep levels in Au diffused P-doped silicon hydrogenated by wet chemical etching, have been determined. The dynamic behavior of these deep levels can enable an estimation of the number of hydrogen atoms in the defects. Differences in the dynamic... (Read more)
- 422. J. Appl. Phys. 93, 6095 (2003) , “Nitrogen-related electron traps in Ga(As,N) layers (3% N)”, P. KrispinCapacitance spectroscopy is used to examine the compositional dependence of deep levels in Si-doped Ga(As,N) layers grown on GaAs. We find two predominant electron traps at about 0.80 and 1.1 eV above the valence band edge EV, which do not depend on composition. For N... (Read more)
- 423. J. Appl. Phys. 93, 6056 (2003) , “Light-induced defects in KTaO3”, V. V. Laguta, M. D. Glinchuk, and I. P. BykovPhotoconductivity (PC), thermally stimulated conductivity (TSC), photoluminescence (PL), thermoluminescence (TL), and electron spin resonance (ESR) measurements have been made on single crystals of potassium tantalate over the temperature range 4.2290 K. We revealed two sorts of... (Read more)
- 424. J. Appl. Phys. 93, 5905 (2003) , “Effects of ion implantation on electron centers in hydrogenated amorphous carbon films”, A. A. Konchits, M. Ya. Valakh, B. D. Shanina, S. P. Kolesnik, and I. B. YanchukElectron spin resonance (ESR) and Raman spectra measurements are carried out on a-C:H and a-C:H:N films both as grown and implanted with W and Ni ions with doses ranged from 0.5×1015 to 1.2×1016 cm2. The as-grown films have small... (Read more)
- 425. J. Appl. Phys. 93, 5388 (2003) , “Electrical and optical properties of Cr and Fe implanted n-GaN”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. V. Pashkova, and A. A. ShlenskyDeep levels introduced into n-GaN films by Fe and Cr implantation have been studied by means of optical absorption and microcathodoluminescence spectroscopy measurements and by deep level transient spectroscopy, admittance spectroscopy, and capacitance-voltage profiling. The results are... (Read more)
- 426. J. Appl. Phys. 93, 5302 (2003) , “Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy”, Tooru Tanaka, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, and Hiroshi OgawaPhotoluminescence (PL) properties of I-doped ZnTe homoepitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy have been investigated as a function of n-butyliodide (n-BuI) transport rate. The PL spectrum changed drastically even when a low dopant transport rate... (Read more)
- 427. J. Appl. Phys. 93, 5140 (2003) , “GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation”, I. Usov and N. ParikhGaN films were implanted with 150 keV Ar+ at temperatures up to 1100 °C to a dose of 3×1015 cm2. Concentration profiles of Ar were measured by secondary ion mass spectroscopy and depth distributions of ion-induced damage were estimated from Rutherford... (Read more)
- 428. J. Appl. Phys. 93, 5118 (2003) , “High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon”, N. Abdelgader and J. H. Evans-FreemanA combination of high resolution Laplace deep level transient spectroscopy (LDLTS) and direct capture cross-section measurements has been used to investigate whether deep electronic states related to interstitial-type defects introduced by ion implantation originated from point or extended defects,... (Read more)
- 429. J. Appl. Phys. 93, 4708 (2003) , “Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactor”, J. Zhang, L. Storasta, J. P. Bergman, N. T. Son, and E. JanzénWe have studied intrinsic and impurity related defects in silicon carbide (SiC) epilayers grown with fast epitaxy using chemical vapor deposition in a vertical hot-wall reactor. Using capacitance transient techniques, we have detected low concentrations of electron traps (denoted as Z1/2,... (Read more)
- 430. J. Appl. Phys. 93, 4590 (2003) , “Diffusion of deuterium (hydrogen) in previously hydrogenated (deuterated) III–V semiconductors”, Bertr, Theys, and François JomardHydrogenated (deuterated) C-doped GaAs and Zn-doped InP layers have been exposed to a deuterium (hydrogen) plasma. Diffusion profiles have been measured by secondary ion mass spectroscopy and compared to those obtained after exposure of as-grown (without any previous plasma treatment) samples in... (Read more)
- 431. J. Appl. Phys. 93, 4331 (2003) , “Pb-type interface defects in (100)Si/SiO2 structures grown in ozonated water solution”, D. Pierreux and A. StesmansSi dangling bond interface defects (Pb0,Pb1) were probed by electron spin resonance in entities of (100)Si with ultrathin SiO2 grown in ozonated de-ionized water solution at room temperature. After photodesorption of passivating hydrogen,... (Read more)
- 432. J. Appl. Phys. 93, 4097 (2003) , “Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO”, Jiaping HanThe dielectric properties of Mn-doped ZnO ceramics with electrically active grain boundaries at low temperatures of 1070 K were investigated by admittance spectroscopy. It was observed that the dielectric relaxation of the main shallow donors, zinc interstitial, in these samples occurred in... (Read more)
- 433. J. Appl. Phys. 93, 3971 (2003) , “Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing”, P. K. HurleyIn this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 °C is presented. From a combined analysis using electron spin resonance and quasistatic capacitancevoltage characterization, the... (Read more)
- 434. J. Appl. Phys. 93, 3674 (2003) , “Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions”, Tomonori Takahashi, Shigeto Fukatsu, and Kohei M. ItohSelf-diffusion coefficients of Si in thermally grown SiO2 on a semiconductor-grade silicon wafer have been determined at temperatures between 1150 and 1300 °C under equilibrium conditions using isotope heterostructures (natSiO2/28SiO2). Si... (Read more)
- 435. J. Appl. Phys. 93, 3635 (2003) , “Effects of oxygen contamination on diffusion length in p+–n GaInNAs solar cells”, A. Balcioglu, R. K. Ahrenkiel, and D. J. FriedmanWe have studied deep level impurities in p+n GaInNAs solar cells using secondary ion mass spectroscopy (SIMS), capacitancevoltage (CV), and deep-level transient spectroscopy (DLTS). These films were grown by atmospheric and low-pressure... (Read more)
- 436. J. Appl. Phys. 93, 3315 (2003) , “Electron paramagnetic resonance characterization of Cr3+ impurities in a β-Ga2O3 single crystal”, T. H. Yeom, I. G. Kim, and S. H. Leeβ-Ga2O3 single crystals doped with the Cr3+ ion were grown in an O2 atmosphere using the floating zone method. Electron paramagnetic resonance (EPR) spectra of the Cr3+ ion were recorded with an X band EPR spectrometer at 20 °C.... (Read more)
- 437. J. Appl. Phys. 93, 3234 (2003) , “Characterization of deep level traps responsible for isolation of proton implanted GaAs”, H. Boudinov and A. V. P. CoelhoDeep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects... (Read more)
- 438. J. Appl. Phys. 93, 3228 (2003) , “Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams”, Akira Uedono, Toshiki Mori, Kunitomo Morisawa, and Kouichi MurakamiHydrogen-terminated vacancies in Si+-implanted Si were studied by means of positron annihilation. After the Si+-ion implantation, hydrogen atoms were introduced into the damaged region using a hydrogen plasma [hydrogen-atom treatment (HAT)]. Monoenergetic positron beams were... (Read more)
- 439. J. Appl. Phys. 93, 3117 (2003) , “Beryllium implantation induced deep level defects in p-type 6H–silicon carbide”, X. D. Chen, C. C. Ling, S. Fung, and C. D. BelingBeryllium implantation into p-type 6HSiC and subsequent thermal annealing have been performed. The deep level defects induced by this beryllium-implantation process have been investigated using deep level transient spectroscopy. Four deep levels labeled BEP1, BEP2, BEP3, and BEP4 were... (Read more)
- 440. J. Appl. Phys. 93, 2719 (2003) , “Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC”, K. McDonald, R. A. Weller, S. T. Pantelides, and L. C. FeldmanThe relationship between nitrogen content and interface trap density (Dit) in SiO2/4HSiC near the conduction band has been quantitatively determined. Nitridation using NO significantly reduces Dit near the conduction band, but the effect saturates... (Read more)
- 441. J. Appl. Phys. 93, 2481 (2003) , “Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam”, A. UedonoZinc oxide (ZnO) thin films grown on ScAlMgO4 substrates were characterized by means of positron annihilation. We measured Doppler broadening spectra of annihilation radiation and photoluminescence spectra for the ZnO films deposited by laser molecular-beam epitaxy and single-crystal ZnO.... (Read more)
- 442. J. Appl. Phys. 93, 2449 (2003) , “Defect evolution of low energy, amorphizing germanium implants in silicon”, A. C. King, A. F. Gutierrez, A. F. Saavedra, and K. S. JonesThe defect evolution upon annealing of low energy, amorphizing germanium implants into silicon was studied using plan-view transmission electron microscopy. Implants with energies of 530 keV at an amorphizing dose of 1×1015 Ge + cm2 were annealed... (Read more)
- 443. J. Appl. Phys. 93, 231 (2003) , “Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation”, E. Oliviero, M. F. Beaufort, and J. F. BarbotThermal helium desorption spectrometry was used to characterized helium implantation-induced defects in SiC. 6HSiC, 4HSiC, and βSiC samples were implanted with helium at energies ranging from 100 to 3 keV and doses ranging from 1×1013 to... (Read more)
- 444. J. Appl. Phys. 93, 2301 (2003) , “Electrical and optical properties of n- and p-InSe doped with Sn and As”, S. ShigetomiThe impurity levels in Sn- and As-doped InSe have been investigated by photoluminescence (PL), photoacoustic (PA), and Hall effect measurements. The carrier transport in the Sn-doped n-type sample is governed by the donor level at 0.06 eV below the conduction band. Moreover, this donor level... (Read more)
- 445. J. Appl. Phys. 93, 2289 (2003) , “Erbium-related band gap states in 4H– and 6H–silicon carbide”, G. Pasold, F. Albrecht, J. Grillenberger, U. Grossner, C. Hülsen, and W. WitthuhnThe band gap states of erbium (Er) in 4H and 6Hsilicon carbide (SiC) were investigated by means of deep level transient spectroscopy (DLTS). The samples were doped with Er by ion implantation followed by thermal annealing procedures. The DLTS measurements with the stable 167Er... (Read more)
- 446. J. Appl. Phys. 93, 143 (2003) , “Platinum-related defects in silicon observed by optical absorption measurements”, N. Fukata, M. Suezawa, and K. SaitoWe investigated platinum (Pt)-related defects in silicon (Si) based on the measurement of their optical absorption and found optical absorption peaks related to Pt clusters. Pt and H were separately doped in FZSi by heating at 10001300 °C followed by quenching in water. Optical... (Read more)
- 447. J. Appl. Phys. 93, 1428 (2003) , “Indium segregation to dislocation loops induced by ion implantation damage in silicon”, Taiji NodaIndium segregation to dislocation loops and indium co-diffusion were investigated using secondary ion mass spectrometry (SIMS) and a physically-based diffusion model. High doses of As (30 keV, 1×1015 cm2) and B (5 keV, 1×1015 cm2) were... (Read more)
- 448. J. Appl. Phys. 93, 1069 (2003) , “Influence of contamination on the dislocation-related deep level C1 line observed in deep-level-transient spectroscopy of n-type silicon: A comparison with the technique of electron-beam-induced current”, Klaus Knobloch, Martin Kittler, and Winfried SeifertMisfit dislocations containing different amounts of contamination were analyzed by deep-level-transient spectroscopy (DLTS). The amount of dislocation contamination was determined from the temperature dependence of the dislocation contrast, c(T), measured by electron-beam-induced... (Read more)
- 449. J. Appl. Phys. 93, 10110 (2003) , “Silicon nanocrystals and defects produced by silicon and silicon-and-gold implantation in silica”, C. BarthouHigh-purity silica samples were implanted at room temperature with 2-MeV Si ions or sequentially with 2-MeV Si and 10-MeV Au ions. Three photoluminescence bands associated with the presence of defects are identified in the as-implanted samples. After a heat treatment at 1100 °C, a line appears... (Read more)
- 450. Solid State Commun. 126, 373 (2003) , Pergamon Press , “Thermoelectric power, magnetoresistance of lead chalcogenides in the region of phase transitions under pressure”, V.V. Shchennikov, S.V. OvsyannikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (N–E) effects were measured at ultrahigh pressure up to 20 GPa under closure of semiconductor gap at NaCl- and GeS-type phases of n-PbTe, p-PbSe and p-PbS. Near~3 GPa, the maxima of N–E effects and magnetoresistance (and hence of mobility of charge carriers) attributed to gapless state for PbTe and PbSe were established. The reversible sign inversion of transverse N–E effect indicating the change in scattering mechanism of charge carries have been revealed at high pressure phase of PbSe. The lowering of thermomagnetic effects with pressure gave the evidence of indirect semiconductor gap at high pressure GeS-type phases in contrary to NaCl-phases. (Read more)
- 451. Appl. Phys. Lett. 81, 883-885 (2002) , “Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias”, A. Galeckas, J. Linnros, and P. PirouzThe extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the recombination-enhanced motion of leading partial dislocations has been investigated by the technique of optical emission microscopy. From the temperature dependence of the measured velocity of the partials, an activation... (Read more)
- 452. Appl. Phys. Lett. 81, 64-66 (2002) , “Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells”, Nethaji Dharmarasu and Masafumi YamaguchiWe report the properties of observed defects in n+/p-InGaP solar cells created by irradiation of protons of different energies. Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (Ev + 0.90±0.05 eV), HP2... (Read more)
- 453. Appl. Phys. Lett. 81, 628-630 (2002) , “Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV”, V. BlickleWe report pseudodielectric function data ε = εa1 + iεa2 and ε = εc1 + iεc2 for the optically uniaxial material... (Read more)
- 454. Appl. Phys. Lett. 81, 5159-5161 (2002) , “The Mn3+/2+ acceptor level in group III nitrides”, T. Graf, M. Gjukic, M. S. Brandt, and M. StutzmannMolecular-beam-epitaxy grown GaN:Mn and AlN:Mn layers with Mn concentrations around 1020 cm3 were investigated by optical absorption and photoconductivity measurements. From electron spin resonance Mn is known to be mostly present in the neutral acceptor state in GaN... (Read more)
- 455. Appl. Phys. Lett. 81, 5018-5020 (2002) , “Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices”, Chang Seok Kang, Katsunori Onishi, Laegu Kang, and Jack C. LeeEffects of hafnium (Hf) contamination on the properties of n+-polycrystalline-Si/SiO2/Si metaloxidesemiconductor (MOS) devices were investigated using p-type Si substrates implanted by Hf ions. Flat-band voltages (Vfb) and substrate... (Read more)
- 456. Appl. Phys. Lett. 81, 4970-4972 (2002) , “Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study”, M. A. Reshchikov and H. MorkoçPhotoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied over a wide range of excitation intensities. A yellow luminescence (YL) band at about 2.2 eV saturates with increasing excitation intensity, whereas a green luminescence (GL) band at about 2.5 eV... (Read more)
- 457. Appl. Phys. Lett. 81, 496-498 (2002) , “Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers”, Xiangyang Ma, Xuegong Yu, Ruixin Fan, and Deren YangThe carrier concentration profile in boron-doped p-type nitrogen-containing Czochralski silicon wafer subjected to a one-step high-temperature (1150 °C) annealing followed by a prolonged 450 °C annealing has been investigated by spreading resistance profile. It is found that the... (Read more)
- 458. Appl. Phys. Lett. 81, 4958-4960 (2002) , “Low-dose n-type nitrogen implants in 4H-SiC”, N. S. SaksLightly-doped n-type layers have been fabricated in 4H-SiC by low-dose implantation of nitrogen ions and characterized using the Hall effect. Near-bulk electron mobility is achieved in the implanted layers. Activation rates for the implanted nitrogen ions, energies and densities of the... (Read more)
- 459. Appl. Phys. Lett. 81, 4841-4843 (2002) , “Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation”, I. Pintilie, L. Pintilie, and K. IrmscherAs-grown 4H-SiC epitaxial layers were investigated by deep-level transient spectroscopy to study the formation of the well-known Z1,2 defect with energy levels normally detected at about EC0.7 eV. Chemical vapor deposition, applying various... (Read more)
- 460. Appl. Phys. Lett. 81, 40-42 (2002) , “Platinum–hydrogen complexes in silicon observed by measurements of optical absorption and electron spin resonance”, N. Fukata, T. Mchedlidze, M. Suezawa, and K. SaitoPlatinumhydrogen (PtH) complexes in Si doped with Pt and H by heating at 10001300 °C followed by quenching in water were investigated from the measurements of optical absorption at 5 K and electron spin resonance (ESR) at 8 K. Optical absorption peaks at 1909.1 and 1910.3... (Read more)
- 461. Appl. Phys. Lett. 81, 3990-3992 (2002) , “Electrical characterization of acceptor levels in Be-implanted GaN”, Yoshitaka NakanoWe have investigated electrically the acceptor levels that are present in Be-implanted GaN. Slight p-type conductivity was attained in undoped GaN films by Be implantation and subsequent annealing at 1050 °C with a SiO2 encapsulation layer. Capacitance-frequency measurements... (Read more)
- 462. Appl. Phys. Lett. 81, 3987-3989 (2002) , “Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy”, P. KrispinDeep carrier traps in the upper half of the band gap of Ga(As,N) layers in the dilute N limit (0.1%) are examined by depth-resolved capacitance spectroscopy on n-type Ga(As,N)/GaAs heterojunctions grown by molecular-beam epitaxy. Distinct compositional fluctuations are revealed in the... (Read more)
- 463. Appl. Phys. Lett. 81, 3816-3818 (2002) , “Stability and electronic structure of hydrogen–nitrogen complexes in GaAs”, W. Orellana and A. C. FerrazWe investigate the stability and electronic properties of defects formed by a substitutional nitrogen in GaAs (NAs) plus interstitial hydrogen atoms using first-principles total-energy calculations. We find the formation of strong NAsH bond when a single H atom is... (Read more)
- 464. Appl. Phys. Lett. 81, 3356-3358 (2002) , “Cathodoluminescence of cubic boron nitride films deposited by chemical vapor deposition”, W. J. Zhang, H. Kanda, and S. MatsumotoCathodoluminescence (CL) characteristics of cubic boron nitride (cBN) films deposited by chemical vapor deposition were investigated. Combined with the results from Fourier-transformed infrared spectroscopy and Raman spectroscopy, the dependence of the emission energy and intensity on the phase... (Read more)
- 465. Appl. Phys. Lett. 81, 3161-3163 (2002) , “Carrier diffusion and radiative recombination in CdTe thin films”, Manuel J. Romero, Timothy A. Gessert, and Mowafak M. Al-JassimWe employed cathodoluminescence spectroscopy and imaging to investigate the carrier diffusion and radiative recombination in CdTe thin films. We observed that carriers excited by the electron beam diffuse by excitons or by free electrons via donor states at low temperatures. The distribution and... (Read more)
- 466. Appl. Phys. Lett. 81, 2989-2991 (2002) , “Theoretical evidence for the kick-out mechanism for B diffusion in SiC”, R. Rurali, P. Godignon, and J. RebolloIn this letter, we analyze by means of first-principles electronic structure calculations the diffusion of B impurities in 3C-SiC. We find, through molecular dynamics, that substitutional B at a Si lattice site is readily displaced by a nearby Si interstitial by the process known as a... (Read more)
- 467. Appl. Phys. Lett. 81, 2962-2964 (2002) , “Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar cells”, Manuel J. Romero, David S. Albin, Mowafak M. Al-Jassim, Xuanzhi Wu, Helio R. Moutinho, and Ramesh G. DhereWe investigate the distribution of Cu acceptor states in CdTe thin films used in high-efficiency solar cells. These states are CuCd and Cui+" align="middle">VCd-" align="middle"> complexes, which are relatively deep and shallow acceptors,... (Read more)
- 468. Appl. Phys. Lett. 81, 2734-2736 (2002) , “Effects of carbon codoping on lattice locations of erbium in silicon”, M. B. Huang and X. T. RenThe effects of carbon codoping on the lattice location of Er atoms in silicon have been investigated using ion beam channeling. A float-zone (FZ) Si (100) wafer was first amorphized to a depth of ~0.3 µm by Si ion implantation at 77 K. The amorphous Si layer was then implanted with... (Read more)
- 469. Appl. Phys. Lett. 81, 2575-2577 (2002) , “Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions”, T. Gebel, L. Rebohle, and W. SkorupaThe trapping effects of negative and positive charge in Ge-enriched SiO2 layers during high-field electron injection from the Si substrate of AlSiO2Si structures are studied. The capture cross section and the concentration of negatively and positively charged traps... (Read more)
- 470. Appl. Phys. Lett. 81, 2547-2549 (2002) , “Photoluminescence upconversion in 4H–SiC”, Mt. Wagner, I. G. Ivanov, L. Storasta, J. P. Bergman, B. Magnusson, W. M. Chen, and E. JanzénEfficient photoluminescence upconversion is observed in 4HSiC samples containing both the UD-3 defect and the titanium impurity. In this process, the titanium photoluminescence emission with no-phonon (NP) lines at 2.848 eV (A0) and 2.789 eV (B0) can be... (Read more)
- 471. Appl. Phys. Lett. 81, 1842-1844 (2002) , “Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon”, E. Simoen and C. ClaeysThe impact of plasma hydrogenation on the subsequent formation of thermal donors at 450 °C in n-type oxygen-doped high-resistivity float-zone silicon is investigated by a combination of electrical and spectroscopic techniques. It is shown that the increase of the doping concentration can... (Read more)
- 472. Appl. Phys. Lett. 81, 1830-1832 (2002) , “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy”, D. C. Look and D. C. ReynoldsAn N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: resistivity = 4×101 Ω cm; hole mobility = 2 cm2/V s; and hole... (Read more)
- 473. Appl. Phys. Lett. 81, 1821-1823 (2002) , “Electronic properties of vacancy–oxygen complex in Ge crystals”, V. P. Markevich, I. D. Hawkins, and A. R. PeakerIt is argued that the vacancyoxygen (VO) complex (A center) in Ge has three charge states: double negative, single negative, and neutral. Corresponding energy levels are located at Ec0.21 eV (VO/) and... (Read more)
- 474. Appl. Phys. Lett. 81, 1812-1814 (2002) , “Characteristics of deep levels in As-implanted GaN films”, L. Lee, W. C. Lee, H. M. Chung, M. C. Lee, W. H. Chen, and W. K. ChenHall, currentvoltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800 °C thermal annealing for 60 min, one additional deep level located at... (Read more)
- 475. Appl. Phys. Lett. 81, 165-167 (2002) , “Close to midgap trapping level in 60Co gamma irradiated silicon detectors”, I. PintilieThe deep level transient spectroscopy method was applied on standard and oxygenated float-zone silicon detectors exposed to high doses of 60Cogamma irradiation. We have detected and characterized a close to midgap trapping level having an ionization energy of... (Read more)
- 476. Appl. Phys. Lett. 81, 1225-1227 (2002) , “Quantification of substitutional carbon loss from Si0.998C0.002 due to silicon self-interstitial injection during oxidation”, M. S. Carroll and J. C. SturmThe empirical reaction of substitutional carbon with silicon self-interstitials in Si0.998C0.002 layers pseudomorphically grown on Si (100) substrates has been quantified at 850 °C. During annealing of a sample with a thin Si0.998C0.002 layer capped... (Read more)
- 477. Appl. Phys. Lett. 80, 995-997 (2002) , “Electronic characterization of n-ScN/p+ Si heterojunctions”, F. Perjeru, X. Bai, and M. E. KordeschWe report the electronic characterization of n-ScN in heterojunctions, including deep level transient spectroscopy of electrically active deep levels. ScN material has been grown by plasma assisted physical vapor deposition on commercial p+ Si substrates.... (Read more)
- 478. Appl. Phys. Lett. 80, 947-949 (2002) , “Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon”, P. G. Coleman and C. P. BurrowsMean concentrations CD of aggregated vacancy-type point-defect structures in float-zone Si implanted with H+, B+, Si+, O+, and Ge2+ ions at energies between 0.45 and 4.0 MeV have been measured as a function of ion dose φ at... (Read more)
- 479. Appl. Phys. Lett. 80, 805-807 (2002) , “Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy”, A. Hierro and A. R. ArehartThe effect of growth regime on the deep level spectrum of n-GaN using molecular-beam epitaxy (MBE) was investigated. As the Ga/N flux ratio was decreased towards Ga-lean conditions, the concentration of two acceptor-like levels, at Ec3.04 and 3.28 eV, increased... (Read more)
- 480. Appl. Phys. Lett. 80, 749-751 (2002) , “Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions”, J. Q. Liu and M. SkowronskiThe structure of stacking faults formed in forward-biased 4H- and 6H-SiC pn diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 103 and 104 cm1.... (Read more)
- 481. Appl. Phys. Lett. 80, 4777 (2002) , “Deep-level defects in InGaAsN grown by molecular-beam epitaxy”, R. J. Kaplar and S. A. RingelDeep-level transient spectroscopy (DLTS) studies on both p-type unintentionally doped and n-type (Si-doped), 1.05 eV band gap InGaAsN grown by molecular-beam epitaxy are reported. Two majority-carrier hole traps were observed in p-type material, H3 (0.38 eV)... (Read more)
- 482. Appl. Phys. Lett. 80, 4774 (2002) , “Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si”, S. Solmi, M. Attari, and D. NobiliThe effect of a point defect excess, vacancies, or, respectively, interstitials, on the deactivation kinetics of As in Si was verified on silicon on insulator (SOI) substrates uniformly doped at concentrations in the range 1.87×1020 cm3. SOI samples can... (Read more)
- 483. Appl. Phys. Lett. 80, 4762-4764 (2002) , “Changes in Al-related photoluminescence in 4H-SiC caused by hydrogenation”, Yaroslav Koshka and Michael S. MazzolaBoth reduction of the intensity of aluminum-related photoluminescence after hydrogenation and the phenomenon of the optical quenching of the Al bound exciton (AlBE) previously reported for hydrogenated 6H-SiC was observed now in the 4H-SiC polytype. Hydrogenation caused also a reduction of the... (Read more)
- 484. Appl. Phys. Lett. 80, 4504 (2002) , “Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N”, M. R. Correia, S. Pereira, A. Cavaco, and E. PereiraWe report the observation of the 1.54 µm emission from optically excited Er3+ in an ion-implanted In0.07Ga0.93N layer epitaxially strained grown by metalorganic chemical vapor deposition. The Er was implanted at 150 keV with a dose of 1×1015... (Read more)
- 485. Appl. Phys. Lett. 80, 4395-4397 (2002) , “Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon”, Jan Schmidt, Karsten Bothe, and Rudolf HezelWe investigate minority-carrier trapping centers in p-type Czochralski (Cz) silicon by means of the quasi-steady-state photoconductance method. Boron and gallium-doped Cz silicon wafers of varying resistivities and oxygen contamination levels are examined. A clear correlation of the trap... (Read more)
- 486. Appl. Phys. Lett. 80, 4354-4356 (2002) , “60Co gamma-irradiation-induced defects in n-GaN”, G. A. Umana-Membreno, J. M. Dell, T. P. Hessler, B. D. Nener, G. Parish, and L. FaraoneTransient capacitance measurements of Schottky diodes fabricated on nominally undoped n-type GaN exposed to 60Co gamma irradiation indicate the introduction of two defect levels with thermal activation energies of 89±6 and 132±11 meV. While the emission characteristics of... (Read more)
- 487. Appl. Phys. Lett. 80, 4163-4165 (2002) , “Effects of amorphizing species' ion mass on the end-of-range damage formation in silicon”, Mark H. Clark and Kevin S. JonesThe effects of preamorphizing ion mass on the end-of-range (EOR) damage and subsequent enhanced diffusivity have been investigated. Amorphizing silicon with implants of 22 keV 28Si+, 32 keV 73Ge+, 40 keV 119Sn+, and 45 keV... (Read more)
- 488. Appl. Phys. Lett. 80, 3934-3936 (2002) , “Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence”, C. C. Ling, W. K. Mui, C. H. Lam, C. D. Beling, S. Fung, and M. K. LuiPositron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (VGa) related defect. Isochronal annealing studies showed at 300 °C annealing,... (Read more)
- 489. Appl. Phys. Lett. 80, 3530-3532 (2002) , “Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si”, Ali Mokhberi, Reza Kasnavi, Peter B. Griffin, and James D. PlummerThe role of fluorine in suppressing boron diffusion was investigated by utilizing a buried dopant marker to monitor the interaction of fluorine with interstitials. A boron spike with a peak concentration of 1.2×1018 cm3 followed by 500 nm of undoped silicon was... (Read more)
- 490. Appl. Phys. Lett. 80, 3349-3351 (2002) , “Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence”, H. Y. Huang, C. H. Chuang, C. K. Shu, Y. C. Pan, W. H. Lee, W. K. Chen, W. H. Chen, and M. C. LeeWe have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic... (Read more)
- 491. Appl. Phys. Lett. 80, 3328-3330 (2002) , “Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN”, K. Kuriyama, T. Tokumasu, Jun Takahashi, and H. KondoThe lattice distortion and the transmuted-Ge related luminescence in neutron-transmutation-doped (NTD) GaN are studied by combining Rutherford backscattering spectroscopy/channeling, Raman scattering, and photoluminescence methods. The lattice displacement of Ga atoms of ~0.12 Å from the 0001... (Read more)
- 492. Appl. Phys. Lett. 80, 3298-3300 (2002) , “Nondestructive defect delineation in SiC wafers based on an optical stress technique”, Xianyun Ma, Mathew Parker, and Tangali S. SudarshanThe potential of using the optical stress technique to delineate the various defects in silicon carbide (SiC) wafers has been fully demonstrated. The observed defects include micropipes, dislocations, stress striations, grain boundary or dislocation walls, and regions of polytype nonuniformity.... (Read more)
- 493. Appl. Phys. Lett. 80, 2878-2879 (2002) , “Creation and suppression of point defects through a kick-out substitution process of Fe in InP”, Y. W. Zhao, H. W. Dong, Y. H. Chen, Y. H. Zhang, J. H. Jiao, J. Q. Zhao, and L. Y. LinIndium antisite defect InP-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation... (Read more)
- 494. Appl. Phys. Lett. 80, 2869-2871 (2002) , “Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO”, Naoki Ohashi, Takamasa Ishigaki, Nobuhiro Okada, Takashi Sekiguchi, Isao Sakaguchi, and Hajime HanedaA pulse-modulated plasma irradiation technique was applied to hydrogenation of ZnO. Three kinds of ZnO samples were employed to investigate the electronic state of hydrogen in ZnO. Secondary-ion-mass-spectroscopy analysis using isotope tracer revealed that the surface layer to 100 nm was doped with... (Read more)
- 495. Appl. Phys. Lett. 80, 2657-2659 (2002) , “Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy”, H. P. Gunnlaugsson and G. WeyerInterstitial 57mFe atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400800 K as a result of the recoil imparted on these daughter atoms in the β decay of ion-implanted, substitutional 57Mn. Diffusional jumps... (Read more)
- 496. Appl. Phys. Lett. 80, 240-242 (2002) , “Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (110)”, Y. Negoro, N. Miyamoto, T. Kimoto, and H. MatsunamiHigh-dose ion implantation of phosphorus into 4HSiC has been investigated. Phosphorus ion implantation with a 1×1016 cm2 dose at 800 °C into 4HSiC (0001) has resulted in a sheet resistance of 80 Ω/ after annealing at 1700 °C. A similar... (Read more)
- 497. Appl. Phys. Lett. 80, 237-239 (2002) , “Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect”, A. Gali, B. Aradi, and D. HeringerUsing first principles calculations, the vibronic properties of hydrogen in a silicon vacancy (VSi + H) are investigated in 3CSiC. The calculations show that the neutral VSi + H complex, which can bind an exciton, is stable only in lightly p-type SiC. This result... (Read more)
- 498. Appl. Phys. Lett. 80, 2332-2334 (2002) , “Magnetophotoluminescence of neutral acceptor states in InSb”, J. A. H. Stotz and M. L. W. ThewaltMagnetophotoluminescence experiments on n-type bulk indium antimonide crystals have been performed using a cryogenically cooled interferometer. Both donoracceptor-pair and free electron-to-neutral acceptor recombination transitions have been observed for four distinct acceptor species.... (Read more)
- 499. Appl. Phys. Lett. 80, 228-230 (2002) , “Enhanced nitrogen diffusion in 4H-SiC”, G. J. Phelps, N. G. Wright, E. G. Chester, C. M. Johnson, A. G. O'Neill, S. Ortolland, A. Horsfall, and K. VassilevskiExperimental evidence is given for boron (B) enhanced diffusion of nitrogen (N) in ion-implanted 4H silicon carbide (4H-SiC), when a nitrogen implant is co-doped within an existing boron p-type well. The co-implanted nitrogen is shown to diffuse continuously with time when samples are... (Read more)
- 500. Appl. Phys. Lett. 80, 2120-2122 (2002) , “Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy”, P. KrispinDeep levels in the upper half of the band gap of strained Ga(As,N) with a GaN mole fraction of 3% are examined by deep-level transient Fourier spectroscopy on GaAs/Ga(As,N)/GaAs heterojunctions grown by molecular-beam epitaxy. In as-grown structures, we find a dominant electron trap at 0.25 eV below... (Read more)
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