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- 151. Phys. Rev. B 73, 134112 (2006) , “EPR g-tensor of paramagnetic centers in yttria-stabilized zirconia from first-principles calculations”, F. Pietrucci, M. Bernasconi, C. Di Valentin, F. Mauri, and C. J. PickardIn order to assign the defect responsible for the experimental electron paramagnetic resonance (EPR) signal with trigonal symmetry (T center), we have studied the properties of different paramagnetic centers in yttria-stabilized cubic zirconia by computing the EPR g-tensor from density... (Read more)
- 152. Phys. Rev. B 73, 125203 (2006) , “Origin of brown coloration in diamond”, L. S. Hounsome, R. Jones, P. M. Martineau, D. Fisher, M. J. Shaw, P. R. Briddon, and S. ÖbergMeasurements of the absorption spectra of brown natural type IIa diamond as well as brown nitrogen-doped CVD diamond are reported. These are largely featureless and increase almost monotonically from about 15.5 eV. It is argued that the brown coloration is due to an extended defect and not to... (Read more)
- 153. Phys. Rev. B 73, 085204 (2006) , “Theory of boron aggregates in diamond: First-principles calculations”, J. P. Goss and P. R. BriddonIt is well known that nitrogen forms aggregates in diamond. However, little is known regarding aggregation of boron, an impurity that can be incorporated in very high concentrations. In this paper we present the results of first-principles calculations regarding the structure and properties of... (Read more)
- 154. Phys. Rev. B 73, 081203(R) (2006) , “Muonium in InSb: Shallow acceptor versus deep trap or recombination center”, V. G. Storchak, D. G. Eshchenko, J. H. Brewer, S. P. Cottrell, and R. L. LichtiThe bound state of a muonium atom has been detected in both n-type and p-type InSb using a high-field µSR technique. The hyperfine constant obtained for this isotropic center (AT=2464±1 MHz), roughly half that of a Mu atom in vacuum, is... (Read more)
- 155. Phys. Rev. B 73, 045208 (2006) , “Characterization of Eδ and triplet point defects in oxygen-deficient amorphous silicon dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of γ-ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (Eγ, Eδ, and triplet) and one... (Read more)
- 156. Phys. Rev. B 73, 024117 (2006) , “Defect properties and p-type doping efficiency in phosphorus-doped ZnO”, Woo-Jin Lee, Joongoo Kang, and K. J. ChangBased on first-principles pseudopotential calculations, we investigated the electronic structure of various P-related defects in ZnO and the p-type doping efficiency for two forms of P dopant sources such as P2O5 and Zn3P2. As compared to N dopants,... (Read more)
- 157. Phys. Rev. Lett. 97, 256603 (2006) , “Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance”, Kazuhiro Marumoto, Shin-ichi Kuroda, Taishi Takenobu,, and Yoshihiro IwasaAn electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to... (Read more)
- 158. Phys. Rev. Lett. 96, 205504 (2006) , “First-Principles Study of the Diffusion of Hydrogen in ZnO”, M. G. Wardle, J. P. Goss, and P. R. BriddonZinc oxide, a wide-gap semiconductor, typically exhibits n-type conductivity even when nominally undoped. The nature of the donor is contentious, but hydrogen is a prime candidate. We present ab initio calculations of the migration barrier for H, yielding a barrier of less than ~0.5 ... (Read more)
- 159. Phys. Rev. Lett. 96, 196402 (2006) , “Nitrogen Vacancies as Major Point Defects in Gallium Nitride”, M. G. Ganchenkova and R. M. NieminenWe present results of ab initio calculations for vacancies and divacancies in GaN. Particular attention is paid to nitrogen vacancies and mixed Ga-N divacancies in negatively charged states, which in n-type GaN are found to be energetically comparable with gallium vacancies. We also... (Read more)
- 160. Phys. Rev. Lett. 96, 035505 (2006) , “Mutual Passivation of Donors and Isovalent Nitrogen in GaAs”, Jingbo Li, Pierre Carrier, Su-Huai Wei, Shu-Shen Li, and Jian-Bai XiaWe study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, SiGa, GeGa, SAs, and SeAs, bind to N in GaAs:N, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such... (Read more)
- 161. Physica B 376-377, 177 (2006) , Elsevier , “Micro-characterisation of Si wafers by high-pressure thermopower technique”, S.V. Ovsyannikov, V.V. Shchennikov Jr, N.A. Shaydarova, V. V. Shchennikov, A. Misiuk, D. Yang, I.V. Antonova, S.N. ShaminIn the present work a set of Czochralski-grown silicon wafers (Cz–Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region (0-20GPa). The shifts were observed in pressure of semiconductor–metal phase transition Pt determined from the S(P) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen cO (which is always present in Cz–Si) on the other hand. The dependence exhibited a maximum of Pt near cO~9×1017cm-3. (Read more)
- 162. Appl. Phys. Lett. 87, 261909 (2005) , “Generation of single color centers by focused nitrogen implantation”, J. Meijer and B. BurchardSingle defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An... (Read more)
- 163. Appl. Phys. Lett. 87, 252113 (2005) , “Electrical activation of the Fe2+/3+ trap in Fe-implanted InP”, B. FraboniWe have studied the electrical activation of the Fe2+/3+ trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the... (Read more)
- 164. Appl. Phys. Lett. 87, 252102 (2005) , “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy”, F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. LiuWe investigated photoluminescence (PL) from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si (100) by molecular-beam epitaxy. Well-resolved PL spectra were obtained from completely dopant-activated samples with hole concentrations above 1.0×1018 ... (Read more)
- 165. Appl. Phys. Lett. 87, 242903 (2005) , “Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature”, V. Ligatchev, Rusli, and Zhao PanDensity of defect states of aluminum nitride (AlN) films deposited by rf magnetron sputtering on 100-oriented silicon (Si) and 4H-silicon carbide (4H-SiC) have been investigated using the deep-level-transient-spectroscopy technique. The films were grown at room temperature with varying nitrogen flow... (Read more)
- 166. Appl. Phys. Lett. 87, 242103 (2005) , “Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions”, Marian Nanu, Florence Boulch, Joop Schoonman, and Albert GoossensDeep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2|CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated.... (Read more)
- 167. Appl. Phys. Lett. 87, 182115 (2005) , “Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy”, Z.-Q. Fang and D. C. LookAlGaN/GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with... (Read more)
- 168. Appl. Phys. Lett. 87, 172103 (2005) , “The antimony-vacancy defect in p-type germanium”, C. E. Lindberg, J. Lundsgaard Hansen, P. Bomholt, A. Mesli, K. Bonde Nielsen, and A. Nylandsted LarsenGe-n+p mesa diodes have been produced in 2-Ω cm single crystals using a molecular-beam epitaxy (MBE) process to grow the Sb-doped epitaxial Ge n+-top layer. The diodes are characterized by a leakage current at room temperature of... (Read more)
- 169. Appl. Phys. Lett. 87, 161906 (2005) , “Vacancy formation in GaAs under different equilibrium conditions”, V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-RehbergDefect properties of undoped semiinsulating and silicon doped n-type GaAs annealed at different arsenic vapor pressures have been studied by means of positron annihilation and Hall effect measurements. In both types of samples, formation of monovacancylike defects during annealing was... (Read more)
- 170. Appl. Phys. Lett. 87, 151909 (2005) , “Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration”, H. Ch. Alt and Y. V. GomeniukFourier-transform infrared absorption measurements have been carried out on nitrogen-doped Czochralski-grown silicon crystals after thermal annealing at 600 °C. The strength of the electronic transitions due to NO related shallow donors shows a square root dependence on the nitrogen... (Read more)
- 171. Appl. Phys. Lett. 87, 122102 (2005) , “Oxygen vacancies in ZnO”, Anderson Janotti and Chris G. Van de WalleThe electronic properties of ZnO have traditionally been explained by invoking intrinsic defects. In particular, the frequently observed unintentional n-type conductivity has often been attributed to oxygen vacancies. We report first-principles calculations showing that the oxygen vacancy... (Read more)
- 172. Appl. Phys. Lett. 87, 091910 (2005) , “Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam”, Z. Q. Chen, M. Maekawa, and A. KawasusoZnO crystals were implanted with N+, O+, and Al+, and co-implanted with O+/N+ and Al+/N+ ions. Positron annihilation measurements indicate introduction of vacancy clusters upon implantation. In the N+-implanted... (Read more)
- 173. Appl. Phys. Lett. 87, 051911 (2005) , “The origin of n-type conductivity in undoped In2O3”, Takumi Tomita, Kazuyoshi Yamashita, and Yoshinori HayafujiThis study explores the origin of the native donor in undoped In2O3. The electronic structure of various point defects in In2O3 clusters is studied using the first-principles molecular orbital calculation. The results show that an oxygen vacancy cannot act... (Read more)
- 174. Appl. Phys. Lett. 87, 032107 (2005) , “Interface traps and dangling-bond defects in (100)Ge/HfO2”, V. V. Afanas'ev, Y. G. Fedorenko, and A. StesmansCombined electrical and electron spin resonance analysis reveals dramatic differences in the interface defect properties of the (100)Ge/GeOxNy/HfO2 and (100)Ge/GeO2 interfaces from the seemingly similar interfaces of (100)Si with the... (Read more)
- 175. Appl. Phys. Lett. 86, 261906 (2005) , “Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation”, Michael R. Hogsed and Yung Kee YeoElectrical properties of defects induced in n-type molecular-beam-epitaxial-grown Al0.14Ga0.86N are studied using deep-level transient spectroscopy (DLTS) to explore the radiation tolerance of AlGaN-based electronic and optoelectronic devices. It has been found that four... (Read more)
- 176. Appl. Phys. Lett. 86, 222110 (2005) , “Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate”, I. P. Vorona, T. Mchedlidze, M. Izadifard, I. A. Buyanova, and W. M. ChenDilute-nitride Ga0.44In0.56NyP1y alloys with y=00.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic... (Read more)
- 177. Appl. Phys. Lett. 86, 171102 (2005) , “Optical observation of donor-bound excitons in hydrogen-implanted ZnO”, J.-K. Lee and M. NastasiThe optical and structural properties of H or He implanted ZnO were investigated using low temperature photoluminescence (PL) and infrared spectroscopy (IR). H implantation is shown to influence the relative luminescence intensities of the donor bound excitons, enhancing the 3.361 eV peak, and... (Read more)
- 178. Appl. Phys. Lett. 86, 162109 (2005) , “Electronic transitions at defect states in Cz p-type silicon”, A. Castaldini, D. Cavalcoli, and A. CavalliniPoint and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical and optical methods. Different materials (oxygen precipitated and/or deformed Cz Si and Fz Si) were examined in order to separate the role of oxygen... (Read more)
- 179. Appl. Phys. Lett. 86, 152111 (2005) , “Electrical characterization of Er- and Pr-implanted GaN films”, S. F. Song, W. D. Chen, Chunguang Zhang, Liufang Bian, and C. C. HsuHall, currentvoltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in... (Read more)
- 180. Appl. Phys. Lett. 86, 142107 (2005) , “Diffusion and dissociation mechanisms of vacancy-oxygen complex in silicon”, Masayuki Furuhashi and Kenji TaniguchiWe are examining diffusion mechanisms of the vacancy-oxygen complex (VO) in bulk Si using ab initio calculations based on a 64-atom supercell. We found two atomic mechanisms involved in the VO diffusion; one is caused by migration of an interstitial oxygen atom, another by migration of a... (Read more)
- 181. Appl. Phys. Lett. 86, 102108 (2005) , “Activation of shallow boron acceptor in C/B coimplanted silicon carbide: A theoretical study”, A. Gali, T. Hornos, and P. DeákAb initio supercell calculations have been carried out to investigate the complexes of boron acceptors with carbon self-interstitials in cubic silicon carbide. Based on the calculated binding energies, the complex formation of carbon interstitials with shallow boron acceptor and boron... (Read more)
- 182. Appl. Phys. Lett. 86, 081914 (2005) , “Photochromism of vacancy-related defects in thermochemically reduced α-Al2O3:Mg single crystals”, R. Ramírez, M. Tardío, and R. GonzálezOxygen vacancies and their aggregates are produced much more readily in Mg-doped α-Al2O3 than in undoped α-Al2O3 single crystals during thermochemical reduction at high temperatures. A reversible photochromic effect was discovered in Mg-doped... (Read more)
- 183. Appl. Phys. Lett. 86, 052109 (2005) , “Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence”, E. R. Glaser, B. V. Shanabrook, and W. E. CarlosThe conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating (SI) 4H-SiC substrates where all N shallow donors are compensated in the dark. The ratio of the nitrogen-bound exciton line... (Read more)
- 184. Appl. Phys. Lett. 86, 031915 (2005) , “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN”, F. Tuomisto and K. SaarinenWe have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga... (Read more)
- 185. J. Appl. Phys. 98, 093701 (2005) , “Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells”, H. S. Lee and M. YamaguchiPresented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08Ga0.92)0.52In0.48P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm1, which... (Read more)
- 186. J. Appl. Phys. 98, 093517 (2005) , “Large lattice relaxation deep levels in neutron-irradiated GaN”, S. Li, J. D. Zhang, C. D. Beling, K. Wang, and R. X. WangDeep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at... (Read more)
- 187. J. Appl. Phys. 98, 073502 (2005) , “Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy”, Y. W. HeoThe properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements... (Read more)
- 188. J. Appl. Phys. 98, 053704 (2005) , “Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon”, A. Armstrong and A. R. ArehartThe impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level... (Read more)
- 189. J. Appl. Phys. 98, 043709 (2005) , “Carrier compensation near tail region in aluminum- or boron-implanted 4H–SiC (0001)”, Y. Negoro, T. Kimoto, and H. MatsunamiElectrical behavior of implanted Al and B near implant-tail region in 4HSiC (0001) after high-temperature annealing has been investigated. Depth profiles of Al and B acceptors determined by capacitance-voltage characteristics are compared with those of Al and B atoms measured by... (Read more)
- 190. J. Appl. Phys. 98, 043518 (2005) , “Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide”, G. Alfieri, E. V. Monakhov, and B. G. SvenssonThe annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLTS). The nitrogen-doped epitaxial layers have been irradiated with 15-MeV electrons at room temperature... (Read more)
- 191. J. Appl. Phys. 98, 043507 (2005) , “Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon”, T. MchedlidzeThree electric-dipole spin-resonance signals, labeled TU7, TU8, and TU9, were detected after subjecting oxygen-rich silicon samples to two-step annealing procedures at 450 and 650 °C for prolonged times. The formation and structural evolution of large interstitial agglomerates, known as rodlike... (Read more)
- 192. J. Appl. Phys. 98, 033704 (2005) , “N interstitial and its interaction with substitutional Mg in p-type GaN”, R. R. Wixom and A. F. WrightDensity-functional theory and the generalized gradient approximation were utilized to investigate the local-energy-minimum configurations and formation energies of N interstitials and their interaction with substitutional Mg in p-type GaN. Along with previously proposed configurations of the... (Read more)
- 193. J. Appl. Phys. 98, 023704 (2005) , “Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry”, E. Trajkov and S. PrawerElectrically active defects and traps in sulfur-doped polycrystalline diamond films synthesized by microwave-assisted chemical-vapor deposition are evaluated using thermally stimulated conductivity measurements after ultraviolet (UV) illumination. The measurements are found to be consistent with the... (Read more)
- 194. J. Appl. Phys. 98, 013502 (2005) , “Near-band-edge slow luminescence in nominally undoped bulk ZnO”, T. Monteiro, A. J. Neves, M. C. Carmo, M. J. Soares, M. Peres, and J. WangWe report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite... (Read more)
- 195. J. Appl. Phys. 97, 123905 (2005) , “Electron paramagnetic resonance of Cr3+ in near-stoichiometric LiTaO3”, M. Loyo-Menoyo and D. J. KeebleElectron-paramagnetic-resonance (EPR) experiments on the dominant Cr3+ center in near-stoichiometric LiTaO3 crystals, grown by the double crucible Czochralski method, are reported. A near complete roadmap of EPR positions was obtained allowing an accurate determination of the... (Read more)
- 196. J. Appl. Phys. 97, 093517 (2005) , “Interaction of defects and H in proton-irradiated GaN(Mg, H)”, S. M. Myers and C. H. SeagerMagnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of... (Read more)
- 197. J. Appl. Phys. 97, 084913 (2005) , “Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition”, H. J. Chung, A. Y. Polyakov, S. W. Huh, S. Nigam, and M. SkowronskiHigh-purity 6H-SiC single crystals were grown by the halide chemical-vapor deposition process. Growth was performed in a vertical hot-wall reactor with a separate injection of a silicon precursor (silicon tetrachloride) and a carbon precursor (propane). Typical growth rates were between 100 and 300 ... (Read more)
- 198. J. Appl. Phys. 97, 063511 (2005) , “Positron beam studies of argon-irradiated polycrystal α-Zr”, Chunlan ZhouDoppler broadening spectroscopy was performed using a variable-energy positron beam to investigate the effect of defects induced by 150-keV Ar-ion-irradiated α-Zr bulk material. S parameter in the damaged layer of the as-irradiated sample induced by ion irradiation increased with the... (Read more)
- 199. J. Appl. Phys. 97, 056101 (2005) , “Triplet recombination at Pb centers and its implications for capture cross sections”, Felice Friedrich, Christoph Boehme, and Klaus LipsPulsed electrically detected magnetic resonance measurements are presented showing that Pb centers at the crystalline silicon (c-Si) (111) to silicon dioxide (SiO2) interface can cause recombination of strongly coupled spin pairs in singlet and triplet... (Read more)
- 200. J. Appl. Phys. 97, 043504 (2005) , “Photoluminescence of mechanically polished ZnO”, D. W. Hamby, D. A. Lucca, and M. J. KlopfsteinThe effects of mechanical polishing on the photoluminescence (PL) from each polar face of wurtzite-structure ZnO are presented. Differences observed for the 4.2 K PL of a mechanically polished surface when compared to that of a chemomechanically polished surface include broadened bound-exciton... (Read more)
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