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Nitrogen donors in 6H-, 4H- and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine... (Read more)
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Investigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 3. Solid State Commun. 7, ii-iii (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system... (Read more)
- 4. Solid State Commun. 61, 199 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun and Qin Guo-gangA new defect, labled as Si-PK1, has been observed with EPR (Electron Paramagnetic Resonance) in neutron irradiated FZ-Si grown in argon, hydrogen and vacuum. Its symmetry has been determined to be triclinic symmetry, the lowest possible symmetry. Si-PK1 has not been observed in CZ-Si. It is not related to any common impurities in Si, like oxygen, carbon, phosphorus and boron, and it should be an intrinsic defect. Combining with the empirical classification of g tensor, it is concluded that Si-PK1 may be a multi-vacancy cluster.
- 5. Physica B 170, 155 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V.Gorelkinskii, N.N.NevinnyiA review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 ± 0.04 eV with a second-order pre-exponential factor, K0 = (1.25 ± 2.5) × 10-7 cm3/s. A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.
- 6. Phys.Rev.Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”,he electron paramagnetic resonance spectrum of float-zone silicon recorded after implantation with protons contains a strongly temperature dependent signal from a vacancy-type defect. The signal displays monoclinic-I symmetry below 65 K and trigonal symmetry above 100 K. This symmetry change, together with a hyperfine splitting from a single proton, allows an unequivocal identification with VH0, the neutral charge state of a vacancy containing a single hydrogen atom. The striking similarity between the properties of VH0 and VP0 (the E center) corroborate our identification.
- 7. J. Appl. Phys. 81, 107 (1997) , “A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon”, Jingwei XuTransient enhanced diffusion (TED) results from implantation damage creating enhanced diffusion of dopants in silicon. This phenomenon has mostly been studied using boron marker layers. We have performed an experiment using boron, phosphorus, and dislocation markers to compare TED effects. This... (Read more)
- 8. J. Appl. Phys. 81, 1180 (1997) , “Electronic defect levels in relaxed, epitaxial p-type Si1 – xGex layers produced by MeV proton irradiation”, E. V. Monakhov, A. Nylandsted Larsen, and P. KringhøjProton-irradiation-induced electronic defects in relaxed, epitaxial p-type Si1 xGex layers grown by molecular-beam epitaxy have been investigated by deep level transient spectroscopy (DLTS) for 0x0.25. Three dominating lines in the DLTS... (Read more)
- 9. J. Appl. Phys. 81, 146 (1997) , “Phase formation and stability of N + implanted SiC thin films”, R. CapellettiSilicon carbide amorphous thin films have been bombarded with 100 keV N ions. Infrared-absorption spectroscopy has been used to study the effect of increasing ion doses, up to 5 × 1017 N + cm 2, on the evolution of chemical bonding between Si, C, and N.... (Read more)
- 10. J. Appl. Phys. 81, 1645 (1997) , “Origin of infrared bands in neutron-irradiated silicon”, N. V. Sarlis, C. A. Londos, and L. G. FytrosInfrared absorption measurements were made of the localized vibrational modes due to defects produced in Czochralski-grown Si material after irradiation with fast neutrons and subsequent thermal treatments. The investigation was focused, in particular, on three satellite bands in the region of the A... (Read more)
- 11. J. Appl. Phys. 81, 1670 (1997) , “Diffusion modeling of zinc implanted into GaAs”, Michael P. Chase, Michael D. Deal, and James D. PlummerThe diffusion of implanted zinc in GaAs is studied and modeled for annealing temperatures of 625 through 850 °C. Secondary ion mass spectrometry data for the annealed profiles are presented. The substitutional interstitial diffusion (SID) mechanism is used to explain how the deviation of the... (Read more)
- 12. J. Appl. Phys. 81, 1877 (1997) , “Crystal-field splitting of Er + 3 in Si”, Shang Yuan RenTwo photoluminescent defects associated with Er + 3-doped Si are (i) a high-temperature defect (which appears after annealing at ~ 900 °C and produces five photoluminescence lines), and (ii) a low-temperature defect (which is created at lower annealing temperatures in addition to the... (Read more)
- 13. J. Appl. Phys. 81, 1929 (1997) , “Effects of microwave fields on recombination processes in 4H and 6H SiC”, N. T. Son, E. Sörman, W. M. Chen, J. P. Bergman, C. Hallin, O. Kordina, A. O. Konstantinov, B. Monemar, and E. JanzénThe effects of microwave fields on recombination processes, which are responsible for the optical detection of cyclotron resonance (ODCR) in 4H and 6H SiC epitaxial layers, have been investigated. We present experimental evidence indicating that the dominant mechanism of ODCR in SiC, at low... (Read more)
- 14. J. Appl. Phys. 81, 2173 (1997) , “Isoconcentration studies of antimony diffusion in silicon”, A. Nylandsted Larsen, P. Kringhøj, J. Lundsgaard Hansen, and S. Yu. ShiryaevThe diffusion of Sb in Si at concentrations around its solid solubility has been studied by isoconcentration experiments. The samples, grown by molecular-beam epitaxy, had constant Sb121 background dopings and a Sb123 spike embedded in this background. The diffusion was... (Read more)
- 15. J. Appl. Phys. 81, 2208 (1997) , “MeV ion implantation induced damage in relaxed Si1 – xGex”, A. Nylandsted LarsenThe damage produced by implanting, at room temperature, 3-µm-thick relaxed Si1 xGex alloys of high crystalline quality with 2 MeV Si + ions has been studied as a function of Ge content (x=0.04, 0.13, 0.24, or 0.36) and Si... (Read more)
- 16. J. Appl. Phys. 81, 2288 (1997) , “Space-charge limited conduction processes in polybenzo[c]thiophene films”, I. MusaWe present an observation of extensive space-charge limited conduction in polybenzo[c]thiophene. Strong evidence for the presence of three discrete trapping levels is shown with a possibility of a fourth trap level. The density of traps for the first three levels is found to be 5 ×... (Read more)
- 17. J. Appl. Phys. 81, 2391 (1997) , “Effect of Er dopant on the properties of In0.53Ga0.47As layers grown by liquid phase epitaxy”, S. Dhar, S. Paul, and M. MazumdarDetailed properties of In0.53Ga0.47As layers grown by liquid phase epitaxy from melts containing 0.04 and 0.1 wt % Er are reported. The carrier concentration in the material is reduced by almost two orders of magnitude as a result of Er doping. Low temperature photoluminescence... (Read more)
- 18. J. Appl. Phys. 81, 2566 (1997) , “Substitutional phosphorus doping of diamond by ion implantation”, H. Hofsäss, M. Dalmer, M. Restle, and C. RonningWe have studied the lattice sites of ion-implanted radioactive 33P in natural IIa diamond using the emission channeling technique. 33P ions were implanted at room temperature with 30 keV and a rather low dose of 1011 cm 2 and the implanted samples... (Read more)
- 19. J. Appl. Phys. 81, 260 (1997) , “Electrically active defects in as-implanted, deep buried layers in p-type silicon”, P. K. Giri, S. Dhar, V. N. Kulkarni, and Y. N. MohapatraWe have studied electrically active defects in buried layers, produced by heavy ion implantation in silicon, using both conventional deep level transient spectroscopy (DLTS) and an isothermal spectroscopic technique called time analyzed transient spectroscopy operated in constant capacitance mode... (Read more)
- 20. J. Appl. Phys. 81, 264 (1997) , “P and N compensation in diamond molecular orbital theory”, Alfred B. Anderson and Lubomir N. KostadinovCluster models and the atom superposition and electron delocalization molecular orbital theory calculations lead to an explanation for the ability of nitrogen to cause phosphorous incorporation in low pressure grown diamond films as observed recently by Cao and coworkers. The theory shows that... (Read more)
- 21. J. Appl. Phys. 81, 2904 (1997) , “Difference of interface trap passivation in Schottky contacts formed on (NH4)2Sx-treated GaAs and In0.5Ga0.5P”, C. R. Moon and Byung-Doo ChoeThe effects of (NH4)2Sx treatments on the interface traps in Au/n-GaAs and Au/n-In0.5Ga0.5P Schottky contacts are investigated by deep level transient spectroscopy measurements. The interface trap concentration in... (Read more)
- 22. J. Appl. Phys. 81, 2916 (1997) , “Positron annihilation in electron-irradiated SixGe1 – x bulk crystals”, Atsuo Kawasuso and Sohei OkadaPosition lifetime measurement for SixGe1 x bulk crystals has been performed. The bulk lifetime of positron in the crystals varied between those for Ge and Si. The dependence of the lifetime on the alloy composition showed an abrupt change at x =... (Read more)
- 23. J. Appl. Phys. 81, 3143 (1997) , “Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP”, L. Quintanilla, S. Dueñas, E. Castán, R. Pinacho, and J. BarbollaIn this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p+-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient... (Read more)
- 24. J. Appl. Phys. 81, 3151 (1997) , “Stoichiometry-dependent deep levels in p-type InP”, Jun-ichi NishizawaPhotocapacitance measurement is applied to investigate the stoichiometry-dependent deep levels in p-type InP crystals doped with Zn prepared by 4 h annealing at 700 °C under controlled phosphorus vapor pressure. Photocapacitance results reveal three dominant deep levels. A dominant deep... (Read more)
- 25. J. Appl. Phys. 81, 3170 (1997) , “Electron migration in BaFCl:Eu2+ phosphors”, Wei ChenHere we report the electron migration by photo- or thermostimulation in BaFCl:Eu2+. Electrons released from F centers may be trapped by other defect sites to form F aggregates or another type of F center and vice versa. This migration reduces the photostimulated... (Read more)
- 26. J. Appl. Phys. 81, 3446 (1997) , “Positron annihilation investigations of vacancies in InP produced by electron irradiation at room temperature”, T. Bretagnon, S. Dannefaer, and D. KerrPositron lifetime investigations were done on a series of InP samples irradiated to various doses with 2.5 MeV electrons. In n-type materials, positron lifetimes of 265 ± 5 and 338 ± 15 ps are attributed to indium vacancyinterstitial complexes and divacancyinterstitial... (Read more)
- 27. J. Appl. Phys. 81, 3453 (1997) , “Electron paramagnetic resonance study of amorphous silicon produced by Kr + ion implantation into silicon”, B. Rakvin and B. PivacA detailed analysis of the electon paramagnetic resonance line shape was performed on amorphous Si samples obtained by Kr + ion implantation. The Lorentzian character and behavior upon annealing was explained via a strong exchange interaction, leading to a cluster model for the spin... (Read more)
- 28. J. Appl. Phys. 81, 3512 (1997) , “Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs”, S. Kuisma, K. Saarinen, and P. HautojärviIn this work undoped semi-insulating (SI) GaAs grown by vertical gradient freeze and liquid encapsulated Czochralski methods was studied by near-infrared absorption (NIRA), thermally stimulated current (TSC) and positron annihilation techniques. The positron experiments reveal both gallium and... (Read more)
- 29. J. Appl. Phys. 81, 3644 (1997) , “Growth and characterization of phosphorus doped diamond films using trimethyl phosphite as the doping source”, Rajat Roychoudhury, E. J. Charlson, T. Stacy, M. Hajsaid, E. M. Charlson, and J. M. MeesePhosphorus doped polycrystalline diamond films were grown by hot-filament chemical vapor deposition using trimethyl phosphite as the doping source. Phosphorus incorporation into the diamond films was established using secondary ion mass spectroscopy. Currentvoltage characteristics were... (Read more)
- 30. J. Appl. Phys. 81, 524 (1997) , “Neutron transmutation doping as an experimental probe for CuZn in ZnSe”, E. D. Wheeler and Jack L. BooneNuclear transmutation is employed in an investigation of copper doping in ZnSe. Copper atoms are introduced at zinc sites in ZnSe after crystal growth processes are complete. Since the copper dopants are introduced after growth, far from equilibrium, they are less able to form complexes with other... (Read more)
- 31. J. Appl. Phys. 81, 6056 (1997) , “Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures”, U. Egger, M. Schultz, P. Werner, O. Breitenstein, T. Y. Tan, and U. GöseleInterdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs... (Read more)
- 32. J. Appl. Phys. 81, 6200 (1997) , “Trapping centres in Cl-doped GaSe single crystals”, G. Micocci, A. Serra, and A. TeporeThermally stimulated current (TSC) and photoconductivity were studied as a function of temperature and light intensity in an n-GaSe single crystal doped with chlorine. TSC measurements were performed in the range 80450 K, and the results were analyzed by different methods. An electron... (Read more)
- 33. J. Appl. Phys. 81, 6205 (1997) , “Electrical and photoluminescence properties of CuInSe2 single crystals”, J. H. Schön, E. Arushanov, Ch. Kloc, and E. BucherElectrical and photoluminescence measurements have been carried out on CuInSe2 single crystals. The observed temperature dependence of the Hall coefficient in n-type CuInSe2 single crystals is explained in assuming the existence of an impurity band. The values of the... (Read more)
- 34. J. Appl. Phys. 81, 631 (1997) , “A predictive model for transient enhanced diffusion based on evolution of {311} defects”, Alp H. Gencer and Scott T. DunhamIt has been observed that {311} defects form, grow, and eventually dissolve during annealing of Si-implanted silicon wafers. The fact that for subamorphizing silicon implants {311} defects initially contain the full net dose of excess interstitials, and that the time scale for dissolution of these... (Read more)
- 35. J. Appl. Phys. 81, 6635 (1997) , “Phosphorus and boron implantation in 6H–SiC”, Mulpuri V. Rao and Jason A. GardnerPhosphorus and boron ion implantations were performed at various energies in the 50 keV4 MeV range. Range statistics of P + and B + were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature... (Read more)
- 36. J. Appl. Phys. 81, 6651 (1997) , “Neutron irradiation defects in gallium sulfide: Optical absorption measurements”, F. J. Manjón, A. Segura, and V. MuñozGallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their... (Read more)
- 37. J. Appl. Phys. 81, 6767 (1997) , “Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germanium”, A. Blondeel and P. ClauwsDeep levels in n-type high-purity (HP) detector grade germanium are studied using optical deep level transient spectroscopy (ODLTS). In this technique, optical injection (using light of above band gap energy) from the back ohmic contact together with a suitable sample configuration results in... (Read more)
- 38. J. Appl. Phys. 81, 6822 (1997) , “A model of hole trapping in SiO2 films on silicon”, P. M. LenahanWe demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers. ©1997 American Institute of Physics.... (Read more)
- 39. J. Appl. Phys. 81, 6948 (1997) , “Optical properties of α-irradiated and annealed Si-doped GaAs”, H. W. Kunert and D. J. BrinkThe influence of irradiation by α particles and subsequent isochronal annealing on n-GaAs doped with silicon, was investigated. Photoluminescence (PL) studies revealed the formation of an induced radiation center at 1.486 eV. In addition to the PL investigation we also employed... (Read more)
- 40. J. Appl. Phys. 81, 7295 (1997) , “Structures and defects in arsenic-ion-implanted GaAs films annealed at high temperatures”, Wen-Chung Chen and C.-S. ChangThe structures and defects are studied in arsenic-ion-implanted GaAs(As + GaAs) films annealed at temperatures higher than 600 °C by using transmission electron microscopy, deep level transient spectroscopy, temperature-dependent conductance, and photoluminescence. The estimated... (Read more)
- 41. J. Appl. Phys. 81, 7362 (1997) , “Interface states in In0.5Ga0.5P/AlxGa1 – xAs heterostructures grown by liquid phase epitaxy”, Yong-Hoon Cho and Byung-Doo ChoeWe report the observation of deep traps localized near the heterointerface of the InGaP/AlGaAs structure grown by liquid-phase epitaxy. In the case of low-quality InGaP/AlGaAs heterojunctions containing interface traps, the shape of capacitance-voltage (C-V) carrier profiles is affected by... (Read more)
- 42. J. Appl. Phys. 81, 7533 (1997) , “Broad photoluminescence band in undoped AlxGa1 – xAs grown by organometallic vapor phase epitaxy”, H. Kakinuma and M. AkiyamaWe have studied the 77 K photoluminescence (PL) of undoped-AlxGa1 xAs (0.21x0.83) grown by organometallic vapor phase epitaxy. A deep broad (DB) PL band is found at 1.61.7 eV at a range of x from 0.21 to 0.63, with a maximum intensity at... (Read more)
- 43. J. Appl. Phys. 81, 7567 (1997) , “Effect of the carbon acceptor concentration on the photoquenching and following enhancement of the photoacoustic signals of semi-insulating GaAs”, A. Fukuyama, Y. Morooka, Y. Akashi, K. Yoshino, K. Maeda, and T. IkariThe spectral and the time dependent piezoelectric photoacoustic (PPA) measurements under the continuous light illumination were carried out at 85 K to investigate nonradiative recombination processes involving EL2 defect levels in carbon concentration controlled and not intentionally doped... (Read more)
- 44. J. Appl. Phys. 81, 7604 (1997) , “Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production”, R. Fornari, A. Zappettini, E. Gombia, and R. MoscaAs-grown Fe-doped semiconducting InP wafers (residual carrier concentration 1015 cm3, estimated iron concentration 58 × 1015 cm3) were converted to semi-insulating, with high resistivity and good mobility, when annealed under... (Read more)
- 45. J. Appl. Phys. 81, 7612 (1997) , “Passivation, structural modification, and etching of amorphous silicon in hydrogen plasmas”, S. A. McQuaid, S. Holgado, J. Garrido, J. Martínez, and J. PiquerasAtomic hydrogen from plasma discharges dissolves in silicon previously amorphized by ion implantation (aSi) in the form of SiH bonds, giving rise to infrared (IR) absorption at ~ 1990 cm 1 and causing partial activation of implanted dopants. Passivation of aSi... (Read more)
- 46. J. Appl. Phys. 81, 78 (1997) , “Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon”, G. Z. Pan and K. N. TuA study of end-of-range (EOR) dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 was carried out by using transmission electron microscopy. Two kinds of post-implantation anneals were performed, furnace anneals at 850 °C and rapid thermal anneals at 1000 °C.... (Read more)
- 47. J. Appl. Phys. 81, 905 (1997) , “Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique”, Junyong KangThe 4.2 K photoluminescence (PL) spectra of undoped bulk 100" align="middle"> InP grown by the liquid-encapsulated vertical Bridgman (LEVB) techniques are characterized by three kinds of recombination peaks. A peak exhibited near band-gap energy is attributed to the recombination of bound... (Read more)
- 48. J. Appl. Phys. 82, 1053 (1997) , “Ion-beam annealing of electron traps in n-type Si by post-H + implantation”, A. ItoThe effects of post-H + implantation on electron traps that are induced by P + implantation (300 keV, 1 × 109 cm 2) has been studied by deep-level transient spectroscopy. H + implantation is performed at room temperature to a... (Read more)
- 49. J. Appl. Phys. 82, 120 (1997) , “Evolution from point to extended defects in ion implanted silicon”, J. L. Benton, S. Libertino, P. Kringhøj, D. J. Eaglesham, and J. M. PoateWe present a quantitative study of the evolution of point defects into clusters and extended defects in ion-implanted Si. Deep level transient spectroscopy (DLTS) measurements are used to identify and count the electrically active defects in the damaged region produced by Si ion implantation at... (Read more)
- 50. J. Appl. Phys. 82, 1208 (1997) , “Carbon-related defects in carbon-doped GaAs by high-temperature annealing”, Hiroshi Fushimi and Kazumi WadaThe behavior of defects in heavily carbon-doped GaAs induced by high-temperature annealing has systematically been studied. It is found that carbon-related defects decrease hole concentration and mobility, carbon concentration on the As sublattices and recombination lifetime, in terms of... (Read more)
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