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- 901. J. Appl. Phys. 93, 4708 (2003) , “Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactor”, J. Zhang, L. Storasta, J. P. Bergman, N. T. Son, and E. JanzénWe have studied intrinsic and impurity related defects in silicon carbide (SiC) epilayers grown with fast epitaxy using chemical vapor deposition in a vertical hot-wall reactor. Using capacitance transient techniques, we have detected low concentrations of electron traps (denoted as Z1/2,... (Read more)
- 902. J. Appl. Phys. 93, 5118 (2003) , “High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon”, N. Abdelgader and J. H. Evans-FreemanA combination of high resolution Laplace deep level transient spectroscopy (LDLTS) and direct capture cross-section measurements has been used to investigate whether deep electronic states related to interstitial-type defects introduced by ion implantation originated from point or extended defects,... (Read more)
- 903. J. Appl. Phys. 93, 5140 (2003) , “GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation”, I. Usov and N. ParikhGaN films were implanted with 150 keV Ar+ at temperatures up to 1100 °C to a dose of 3×1015 cm2. Concentration profiles of Ar were measured by secondary ion mass spectroscopy and depth distributions of ion-induced damage were estimated from Rutherford... (Read more)
- 904. J. Appl. Phys. 93, 5302 (2003) , “Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy”, Tooru Tanaka, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, and Hiroshi OgawaPhotoluminescence (PL) properties of I-doped ZnTe homoepitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy have been investigated as a function of n-butyliodide (n-BuI) transport rate. The PL spectrum changed drastically even when a low dopant transport rate... (Read more)
- 905. J. Appl. Phys. 93, 5388 (2003) , “Electrical and optical properties of Cr and Fe implanted n-GaN”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. V. Pashkova, and A. A. ShlenskyDeep levels introduced into n-GaN films by Fe and Cr implantation have been studied by means of optical absorption and microcathodoluminescence spectroscopy measurements and by deep level transient spectroscopy, admittance spectroscopy, and capacitance-voltage profiling. The results are... (Read more)
- 906. J. Appl. Phys. 93, 5905 (2003) , “Effects of ion implantation on electron centers in hydrogenated amorphous carbon films”, A. A. Konchits, M. Ya. Valakh, B. D. Shanina, S. P. Kolesnik, and I. B. YanchukElectron spin resonance (ESR) and Raman spectra measurements are carried out on a-C:H and a-C:H:N films both as grown and implanted with W and Ni ions with doses ranged from 0.5×1015 to 1.2×1016 cm2. The as-grown films have small... (Read more)
- 907. J. Appl. Phys. 93, 6056 (2003) , “Light-induced defects in KTaO3”, V. V. Laguta, M. D. Glinchuk, and I. P. BykovPhotoconductivity (PC), thermally stimulated conductivity (TSC), photoluminescence (PL), thermoluminescence (TL), and electron spin resonance (ESR) measurements have been made on single crystals of potassium tantalate over the temperature range 4.2290 K. We revealed two sorts of... (Read more)
- 908. J. Appl. Phys. 93, 6095 (2003) , “Nitrogen-related electron traps in Ga(As,N) layers (3% N)”, P. KrispinCapacitance spectroscopy is used to examine the compositional dependence of deep levels in Si-doped Ga(As,N) layers grown on GaAs. We find two predominant electron traps at about 0.80 and 1.1 eV above the valence band edge EV, which do not depend on composition. For N... (Read more)
- 909. J. Appl. Phys. 93, 753 (2003) , “Formation and passivation kinetics of gold-hydrogen complexes in n-type silicon”, A. ZamoucheReverse- and zero-bias annealing kinetics of Au-related deep levels in Au diffused P-doped silicon hydrogenated by wet chemical etching, have been determined. The dynamic behavior of these deep levels can enable an estimation of the number of hydrogen atoms in the defects. Differences in the dynamic... (Read more)
- 910. J. Appl. Phys. 93, 8926 (2003) , “Behavior of oxidation-induced stacking faults in annealed Czochralski silicon doped by nitrogen”, Deren Yang, Jia Chu, Jin Xu, and Duanlin QueAfter oxidation at 1150 °C, oxidation-induced stacking faults (OSFs) in nitrogen-doped Czochralski crystal silicon (NCZSi) preannealed at 750 °C for 16 h followed by annealing at 1100 °C were investigated. It was observed that the size of OSFs in NCZSi samples was larger than... (Read more)
- 911. J. Appl. Phys. 93, 8975 (2003) , “Infrared absorption bands associated with native defects in ZnGeP2”, N. C. Giles, Lihua Bai, M. M. Chirila, N. Y. Garces, and K. T. StevensAn optical absorption investigation from 10 to 296 K has been performed on bulk crystals of ZnGeP2 grown by the horizontal-gradient-freeze method. We identify three broad absorption bands in the spectral range from 1 to 4 µm that are due to native defects. At low temperature, a band... (Read more)
- 912. J. Appl. Phys. 93, 8995 (2003) , “Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals”, T. Monteiro, C. Boemare, and M. J. SoaresWe report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the... (Read more)
- 913. J. Appl. Phys. 93, 9104 (2003) , “Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy”, Sung-Yong Chung, Niu Jin, Anthony T. Rice, and Paul R. BergerDeep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n+-p junctions... (Read more)
- 914. J. Appl. Phys. 93, 930 (2003) , “Effects of annealing ambient on the formation of compensation defects in InP”, A. H. DengPositron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The... (Read more)
- 915. J. Appl. Phys. 93, 9395 (2003) , “Dislocation loop evolution in ion implanted 4H–SiC”, P. O. Å. Persson and L. Hultman4HSiC epilayers were implanted with 27Al in doses from 1.3×1014 cm2 to 7.8×1014 cm2. Dislocation loop formation after high-temperature annealing was studied by plan-view transmission electron microscopy and... (Read more)
- 916. J. Appl. Phys. 93, 9659 (2003) , “Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors”, V. Eremin, D. S. Poloskin, E. Verbitskaya, M. P. Vlasenko, and L. S. VlasenkoSpin-dependent recombination (SDR) electron paramagnetic resonance (EPR) spectroscopy is applied for investigation of paramagnetic recombination centers in irradiated silicon pn junction detectors (diodes) formed on float-zone (FZ) silicon wafers. The main radiation defects,... (Read more)
- 917. J. Appl. Phys. 94, 140 (2003) , “Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon”, Jinggang Lu, Magnus Wagener, and George RozgonyiThe effects of grain boundaries (GB) in polycrystalline sheet silicon on impurity gettering and oxygen precipitation were investigated by electron beam induced current (EBIC), deep level transient spectroscopy (DLTS), micro-Fourier-transform infrared spectroscopy (FTIR), and preferential... (Read more)
- 918. J. Appl. Phys. 94, 1485 (2003) , “Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN”, H. K. Cho, C. S. Kim, and C.-H. HongIn n-type GaN films grown on sapphire substrates by metal-organic chemical vapor deposition such as unintentionally GaN and intentionally Si-doped GaN and In-doped GaN, the electron capture behaviors were investigated by deep level transient spectroscopy with various filling pulse durations.... (Read more)
- 919. J. Appl. Phys. 94, 1647 (2003) , “Defect characterization of ZnBeSe solid solutions by means of positron annihilation and photoluminescence techniques”, F. Plazaola, J. Flyktman, and K. SaarinenDefect characterization of as-grown Zn1xBexSe compound semiconductors was studied by positron lifetime and photoluminescence measurements. We obtain both experimental and theoretical evidence that the bulk lifetime of free positrons decreases linearly with... (Read more)
- 920. J. Appl. Phys. 94, 1965 (2003) , “Magnetic resonance investigation of Mn2+ in ZnO nanocrystals”, Huijuan Zhou, Detlev M. Hofmann, Albrecht Hofstaetter, and Bruno K. MeyerElectron paramagnetic resonance measurements were carried out to probe the structure of Mn2+ in ZnO nanocrystals with different surface conditions, modified by an annealing process. Changes in the spectra by the annealing treatment indicate the existence of three Mn2+ centers.... (Read more)
- 921. J. Appl. Phys. 94, 2234 (2003) , “Occupation probability for acceptor in Al-implanted p-type 4H–SiC”, Hideharu Matsuura, Koichi Sugiyama, Kazuhiro Nishikawa, Takashi Nagata, and Nobuya FukunagaAl-implanted p-type 4HSiC layers with different implantation and annealing temperatures are formed, and the temperature dependence of the hole concentration p(T) is obtained by Hall-effect measurements. The Al acceptor level in SiC is deep (~180 meV), and its first excited... (Read more)
- 922. J. Appl. Phys. 94, 2510 (2003) , “Electron paramagnetic resonance study of electron and hole traps in β-BaB2O4 crystals”, Wei Hong and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate point defects in single crystals of β-BaB2O4 (commonly referred to as BBO). An irradiation with x rays at 77 K produces two dominant EPR spectra, one electronlike and the other holelike. The... (Read more)
- 923. J. Appl. Phys. 94, 2888 (2003) , “Quantitative comparisons of dissolved hydrogen density and the electrical and optical properties of ZnO”, C. H. Seager and S. M. MyersRecent density functional theory calculations indicate that hydrogen is soluble in ZnO, effectively forming a shallow donor state. It has been suggested that these donors are responsible for the large increases in electron concentration seen in ZnO samples annealed at elevated temperatures in... (Read more)
- 924. J. Appl. Phys. 94, 2895 (2003) , “Proton implantation effects on electrical and recombination properties of undoped ZnO”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, and V. I. VdovinElectrical and optical properties of undoped n-ZnO crystals implanted with 50 keV protons with doses from 5×1013 to 5×1015 cm2 are reported. Proton implantation leads to a decrease of the carrier concentration in the near-surface region, but... (Read more)
- 925. J. Appl. Phys. 94, 2901 (2003) , “The 3838 Å photoluminescence line in 4H-SiC”, A. HenryWe report the results of a study of the origins of the peak near 3838 Å observed in the photoluminescence (PL) spectrum of 4H-SiC. For n+-doped 4H-SiC material, it appears as a broad peak that is shown to be related to high-level nitrogen doping, with an energy position... (Read more)
- 926. J. Appl. Phys. 94, 2992 (2003) , “Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers”, M. Lazar, C. Raynaud, D. Planson, and J.-P. ChanteEpilayers of 6H and 4HSiC were Al implanted with various doses to form p-type layers after a postimplantation annealing performed at 1700 °C/30 min. Rutherford backscattering spectrometry in the channeling mode analyses carried out before and after annealing show virgin nonimplanted... (Read more)
- 927. J. Appl. Phys. 94, 3004 (2003) , “Deep level transient spectroscopic study of neutron-irradiated n-type 6H–SiC”, X. D. Chen, S. Fung, C. C. Ling, and C. D. BelingDeep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6HSiC after neutron irradiation. Deep levels situated at EC0.23, EC0.36/0.44, EC0.50, and... (Read more)
- 928. J. Appl. Phys. 94, 301 (2003) , “Thermally stimulated luminescence from vapor-transport-equilibrated LiTaO3 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonThermally stimulated luminescence (TSL), optical absorption, and electron paramagnetic resonance (EPR) have been used to characterize the emission of ultraviolet light from undoped LiTaO3. The crystals in this study were grown from a congruent melt and then subjected to a... (Read more)
- 929. J. Appl. Phys. 94, 3069 (2003) , “Proton implantation effects on electrical and luminescent properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe electrical properties, deep level spectra, and microcathodoluminescence (MCL) spectra of p-GaN films implanted with 100 keV protons are reported. Measurable decreases of the MCL intensity began for doses as low as 1012 cm2, while measurable decreases of the... (Read more)
- 930. J. Appl. Phys. 94, 3075 (2003) , “Evolution of photoluminescent defect clusters in proton- and copper-implanted silicon crystals during annealing”, Minoru Nakamura and Susumu MurakamiEvolution of intrinsic defects (interstitials or vacancies) formed by implanting with protons and copper ions in silicon crystals and then annealing the crystals at temperatures from 100 to 800 °C was investigated by photoluminescence (PL) measurements. For samples annealed below 400 °C,... (Read more)
- 931. J. Appl. Phys. 94, 3233 (2003) , “Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy”, Y. Nakakura, M. Kato, M. Ichimura, and E. AraiAn optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize defects in epitaxial 6H-SiC. The O-CTS measurements enable us to estimate the optical ionization energy and the optical cross section of these defects. By the deep level transient spectroscopy (DLTS), three... (Read more)
- 932. J. Appl. Phys. 94, 3796 (2003) , “Electron paramagnetic resonance characterization of impurity Gd3+ ions in a PbWO4 single crystal”, T. H. Yeom and S. H. LeeLead tungstate single crystals doped with Gd2O3 were grown by the Czochralski method in Ar atmosphere. The electron paramagnetic resonance of the Gd3+ ion in a PbWO4 single crystal has been investigated at 9.4 GHz. The spectroscopic splitting tensor... (Read more)
- 933. J. Appl. Phys. 94, 3923 (2003) , “Electrically active sulfur-defect complexes in sulfur implanted diamond”, R. Kalish and C. Uzan-SaguySingle crystal type IIa 100 diamonds were implanted with sulfur, phosphorus, and argon ions under different implantation and annealing conditions. Shallow (sub-MeV) as well as deep (MeV) implantations into samples held at low (liquid nitrogen) ambient (room temperature) and high (400 °C)... (Read more)
- 934. J. Appl. Phys. 94, 3960 (2003) , “Hydrogen plasma passivation effects on properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen on the electrical and optical properties of p-GaN were investigated. Hydrogen is readily incorporated into the material at temperatures of 250350 °C, which is consistent with the low activation energy for diffusion reported by Seager et al. [J. Appl. Phys.... (Read more)
- 935. J. Appl. Phys. 94, 400 (2003) , “Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen plasma treatment on high-quality bulk n-ZnO crystals were studied. It is shown that after plasma exposure at 200 °C for 0.5 h the hydrogen penetrates into the material down to about 20 µm and shows concentrations close to 1017 cm3... (Read more)
- 936. J. Appl. Phys. 94, 4363 (2003) , “Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon”, C. A. Londos and M. S. PotsidiCzochralski-grown silicon samples subjected to high temperaturehigh pressure (HTHP) treatments in the range of 900 °C were irradiated with fast neutrons. Transmission electron microscopy measurements revealed the presence of oxygen precipitates (SiOx) and dislocation... (Read more)
- 937. J. Appl. Phys. 94, 4807 (2003) , “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements”, Z. Q. Chen, S. Yamamoto, M. Maekawa, and A. KawasusoDefects in hydrothermal grown ZnO single crystals are studied as a function of annealing temperature using positron annihilation, x-ray diffraction, Rutherford backscattering, Hall, and cathodoluminescence measurements. Positron lifetime measurements reveal the existence of Zn vacancy related... (Read more)
- 938. J. Appl. Phys. 94, 5297 (2003) , “Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors”, A. CavalliniThe features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaAs/GaAs heterostructure field-effect transistors both through experiments and two-dimensional numerical device simulations. Differently from electron traps located in the n-type semiconductor... (Read more)
- 939. J. Appl. Phys. 94, 5399 (2003) , “Optical properties of GaSe grown with an excess and a lack of Ga atoms”, S. ShigetomiMeasurements of the photoluminescence (PL) and photocurrent (PC) have been made on GaSe with excess Ga or Se atoms. The 1.77 eV emission band for the sample with excess Ga atoms is attributed to the transition from the donor level at 0.175 eV to the acceptor level at 0.152 eV. This donor level is... (Read more)
- 940. J. Appl. Phys. 94, 5617 (2003) , “Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation”, M. D. Chun, D. Kim, and J. Y. HuhA comparative study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) Si wafers, which differed mainly in interstitial oxygen concentration, upon 3 MeV proton irradiation with fluences of up to 2×1015... (Read more)
- 941. J. Appl. Phys. 94, 6456 (2003) , “Production and thermal decay of radiation-induced point defects in KD2PO4 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonOptical absorption and electron paramagnetic resonance (EPR) techniques have been used to characterize the production and thermal decay of point defects in undoped single crystals of KD2PO4 grown at Lawrence Livermore National Laboratory. A crystal was irradiated at 77 K with x... (Read more)
- 942. J. Appl. Phys. 94, 7112 (2003) , “Dynamic annealing in ion implanted SiC: Flux versus temperature dependence”, A. Yu. KuznetsovA strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes... (Read more)
- 943. J. Appl. Phys. 94, 7470 (2003) , “Defect assessment of Mg-doped GaN by beam injection techniques”, C. Díaz-Guerra and J. PiquerasThe electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous... (Read more)
- 944. J. Appl. Phys. 94, 7567 (2003) , “Electron paramagnetic resonance of Cr2+ and Cr4+ ions in CdGeAs2 crystals”, N. Y. Garces, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate chromium ions in single crystals of CdGeAs2 grown by the horizontal gradient freeze technique. Signals from Cr2+ and Cr4+ ions were observed near 12 K. The Cr2+ ions have the... (Read more)
- 945. Appl. Phys. Lett. 82, 1021-1023 (2003) , “Ga vacancies and grain boundaries in GaN”, J. Oila and K. SaarinenWe have applied a low-energy positron beam to study epitaxial Si-doped GaN layers, where the grain size varies from 0.2 to 25 µm. Negatively charged Ga vacancies are found in n-type samples. Their concentration is independent of the grain size, suggesting that Ga vacancies exist... (Read more)
- 946. Appl. Phys. Lett. 82, 1066-1068 (2003) , “Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy”, In Sang Jeon, Jaehoo Park, Dail Eom, Cheol Seong Hwang, and Hyeong Joon KimThe minority carrier (electron) capture process and the interface trap density of a TiN/Al2O3/p-Si metaloxidesemiconductor capacitor were examined by deep level transient spectroscopy (DLTS). It was found that the activation energies of the large peaks... (Read more)
- 947. Appl. Phys. Lett. 82, 1556-1558 (2003) , “Identification of implantation-induced defects in GaN: A near-edge x-ray absorption fine structure study”, M. Katsikini, F. Pinakidou, and E. C. PalouraWe apply near-edge x-ray absorption fine structure spectroscopy, at the N K edge, in order to identify the signature of implantation-induced defects in the partial density of empty states in GaN implanted with O, Mg, and Si ions. The dose range was 10141018... (Read more)
- 948. Appl. Phys. Lett. 82, 2020-2022 (2003) , “Observation of interface defects in thermally oxidized SiC using positron annihilation”, James Dekker and Kimmo SaarinenPositron annihilation has been applied to study thermally oxidized 4H- and 6H-SiC. The SiC/SiO2 interface is found to contain a high density of open-volume defects. The positron trapping at the interface defects correlates with the charge of the interface determined by... (Read more)
- 949. Appl. Phys. Lett. 82, 2059-2061 (2003) , “Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy”, J. Gebauer and E. R. WeberWe identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (TeAs), Ga vacancies (VGa), and Ga vacancydonor complexes... (Read more)
- 950. Appl. Phys. Lett. 82, 2074-2076 (2003) , “Cathodoluminescence and Hall-effect measurements in sulfur-doped chemical-vapor-deposited diamond”, Kazushi Nakazawa, Minoru Tachiki, and Hiroshi KawaradaDominant n-type conductivity in sulfur-doped chemical-vapor-deposited diamond is observed by Hall-effect measurement. The activation energy is estimated at 0.50.75 eV above 600 K. Below 600 K, the carrier concentration deviates from the activation energy, and Hall mobility decreases in... (Read more)
- 951. Appl. Phys. Lett. 82, 2082-2084 (2003) , “Effect of Be+ + O+ coimplantation on Be acceptors in GaN”, Yoshitaka Nakano and Tetsu KachiP-type regions were produced in undoped GaN films by Be+ and Be+ + O+ implantation and subsequent annealing at temperatures between 1000 and 1050 °C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level was... (Read more)
- 952. Appl. Phys. Lett. 82, 2094-2096 (2003) , “Comparison of oxygen-chain models for late thermal double donors in silicon”, Y. J. Lee, J. von Boehm, M. Pesola, and R. M. NieminenThe electronic and atomic structures of the oxygen chains assigned to late thermal double donors (TDDs) in silicon are studied using accurate total-energy calculations. We find that the ring-type O-chain model is best suited for TDDs and better than the di-Y-lid-type O-chain model. The ring-type O... (Read more)
- 953. Appl. Phys. Lett. 82, 2169-2171 (2003) , “Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for "type inversion"”, I. PintilieRadiation-induced defects in silicon diodes were investigated after exposure to high doses of Co60-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in... (Read more)
- 954. Appl. Phys. Lett. 82, 2254-2256 (2003) , “Phosphorus and boron diffusion in silicon under equilibrium conditions”, J. S. Christensen and H. H. RadamsonThe intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 °C) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74±0.07 eV and a... (Read more)
- 955. Appl. Phys. Lett. 82, 2263-2265 (2003) , “Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy”, A. Krtschil, A. Dadgar, and A. KrostThe electrical charge state of threading dislocations in differently doped GaN is investigated by scanning surface potential microscopy in conjunction with tapping mode atomic force microscopy. The dislocations are found to be either negatively charged or neutral depending on the type of doping... (Read more)
- 956. Appl. Phys. Lett. 82, 2652-2654 (2003) , “Vacancy–oxygen complex in Si1–xGex crystals”, V. P. Markevich and A. R. PeakerElectronic properties of the vacancyoxygen complex in unstrained Si1xGex crystals (0<x0.055) grown by the Czochralski method were studied by means of capacitance transient techniques. The enthalpy of electron ionization for the single... (Read more)
- 957. Appl. Phys. Lett. 82, 2835-2837 (2003) , “Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) analysis reveals that the versatile noncontacting corona biasing method frequently applied in the electrical analysis of Si/SiO2-based structures is not a noninvasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of... (Read more)
- 958. Appl. Phys. Lett. 82, 296-298 (2003) , “Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes”, H. Ohyama, K. Takakura, and K. HayamaThe impact of high-temperature neutron, electron, and γ-irradiations on the dark current of silicon pin junctions is described in terms of a damage coefficient KI. It is shown that this KI is thermally activated and reduces... (Read more)
- 959. Appl. Phys. Lett. 82, 2987-2989 (2003) , “Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon”, D. H. Macdonald, H. Maeckel, S. Doshi, W. Brendle, and A. CuevasCarrier lifetime measurements have been used to characterize residual defects after low-energy implanting of silicon ions followed by high-temperature annealing (900 or 1000 °C). The implant was found to result in two distinct regions of lifetime-reducing damage. First, a high recombination... (Read more)
- 960. Appl. Phys. Lett. 82, 3002-3004 (2003) , “Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN”, Qing Yang, Henning Feick, and Eicke R. WeberExcitonic luminescence of GaN after irradiation with 0.42-MeV electrons has been investigated in detail. The low-energy irradiation generates damage exclusively in the N sublattice. Additional bound-exciton lines are found and are shown to arise from a hydrogenic donor with a binding energy... (Read more)
- 961. Appl. Phys. Lett. 82, 3260-3262 (2003) , “Optically induced formation of the hydrogen complex responsible for the 4B0 luminescence in 4H-SiC”, Yaroslav KoshkaFormation of a boron-related defect responsible for the 4B0 emission line in the low-temperature photoluminescence spectrum of 4H SiC has been investigated. The 4B0 luminescence was absent in as-grown epitaxial layers. This line appeared after hydrogenation along with other... (Read more)
- 962. Appl. Phys. Lett. 82, 3433-3435 (2003) , “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy”, J. Oila, J. Kivioja, V. Ranki, and K. SaarinenPositron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 1019 to below 1016 cm3, as the... (Read more)
- 963. Appl. Phys. Lett. 82, 3448-3450 (2003) , “Optical properties of the isoelectronic trap Hg in ZnO”, Th. Agne, M. Dietrich, J. Hamann, S. Lany, H. Wolf, and Th. WichertNominally undoped ZnO crystals were doped with Hg by implanting radioactive 197Hg/197Au atoms. After annealing at 1073 K, the photoluminescence (PL) spectra recorded at 1.6 K exhibit a Hg related band in the region between 3.28 and 2.85 eV. The sharp no-phonon line, which is... (Read more)
- 964. Appl. Phys. Lett. 82, 3457-3459 (2003) , “Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN”, R. Armitage, William Hong, Qing Yang, H. Feick, J. Gebauer, and E. R. WeberCarbon-doped GaN layers grown by molecular-beam epitaxy are studied with photoluminescence and positron annihilation spectroscopy. Semi-insulating layers doped with >1018 cm3 carbon show a strong luminescence band centered at ~2.2 eV (yellow luminescence). The... (Read more)
- 965. Appl. Phys. Lett. 82, 3469-3471 (2003) , “Fluorine-enhanced boron diffusion in amorphous silicon”, J. M. Jacques, L. S. Robertson, and K. S. JonesSilicon wafers were preamorphized with 70 keV Si+ at a dose of 1×1015 atoms/cm2, generating a deep amorphous layer of 1800 Å. Implants of 500 eV 11B+, with and without 6 keV F+, followed at doses of 1×1015... (Read more)
- 966. Appl. Phys. Lett. 82, 3671-3673 (2003) , “Deep level defect in Si-implanted GaN n+-p junction”, X. D. Chen, Y. Huang, S. Fung, C. D. Beling, and C. C. LingA deep level transient spectroscopy (DLTS) study has been performed on a GaN n+-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect has been revealed within the interfacial region of the junctions by... (Read more)
- 967. Appl. Phys. Lett. 82, 3865-3867 (2003) , “Electrically active defects in silicon produced by ion channeling”, H. Kortegaard NielsenLow-dose implantations with 65 Si and 150 keV Ge ions into the n+ top layer of Si n+p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transient spectroscopy. Results were compared to crystal-TRIM... (Read more)
- 968. Appl. Phys. Lett. 82, 40-42 (2003) , “Observation of defect complexes containing Ga vacancies in GaAsN”, J. Toivonen, T. Hakkarainen, M. Sopanen, and H. LipsanenPositron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm3 with increasing N composition and decreases... (Read more)
- 969. Appl. Phys. Lett. 82, 4074-4076 (2003) , “Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2”, A. Stesmans and V. V. Afanas'evElectron spin resonance analysis of (100)Si/HfO2 interfaces prepared by chemical vapor deposition of the oxide using three chemically different precursors reveals that the trivalent Si defects common for Si/SiO2 interfacesPb0 and Pb1... (Read more)
- 970. Appl. Phys. Lett. 82, 4157-4159 (2003) , “Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors”, H. D. Shih, M. A. Kinch, F. Aqariden, P. K. Liao, and H. F. SchaakeGold-doped Hg1xCdxTe samples of x = 0.2067 (in the very-long-wavelength infrared spectral band, with cutoff wavelengths ~13.2 µm at 77 K) were prepared by tellurium-melt liquid-phase epitaxy. The samples were doped with indium to... (Read more)
- 971. Appl. Phys. Lett. 82, 532-534 (2003) , “Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO”, T. Koida, S. F. Chichibu, and A. UedonoInfluences of point defects on the nonradiative processes in ZnO were studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement. Free excitonic PL intensity naturally increased with the increase in the... (Read more)
- 972. Appl. Phys. Lett. 82, 565-567 (2003) , “Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces”, A. Lehner, F. Kohl, S. A. Franzke, T. Graf, M. S. Brandt, and M. StutzmannOrganic monolayers were prepared on hydrogen-terminated (111) silicon surfaces by thermally induced hydrosilylation with alkenes. The electronic properties of the modified surfaces were studied by photoconductivity and spin-dependent photoconductivity measurements (electrically detected magnetic... (Read more)
- 973. Appl. Phys. Lett. 82, 568-570 (2003) , “Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation”, V. V. Afanas'ev and A. StesmansAn analysis of fast and slow traps at the interface of 4HSiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects... (Read more)
- 974. Appl. Phys. Lett. 82, 592-594 (2003) , “Shallow donor state of hydrogen in indium nitride”, E. A. DavisThe nature of the electron states associated with hydrogen in InN has been inferred by studying the behavior of positive muons, which mimic protons when implanted into semiconductors. The muons capture electrons below 60 K, forming paramagnetic centers with a binding energy of about 12 meV. Together... (Read more)
- 975. Appl. Phys. Lett. 83, 1325-1327 (2003) , “Aggregate nitrogen in synthetic diamond”, Karen M. McNamaraNitrogen is a commonly observed impurity in natural and synthetic diamond, yet there are still many questions in regard to its incorporation in the material. In all three common forms of diamond: natural, high-pressure high-temperature synthetic, and chemical vapor deposition (CVD) diamond; nitrogen... (Read more)
- 976. Appl. Phys. Lett. 83, 1385-1387 (2003) , “Hydrogen passivation of nitrogen in SiC”, A. Gali and P. DeákFirst-principles calculations carried out in 4H-SiC show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. The complex is very stable with respect to isolated positive donors and negatively charged hydrogen interstitials, so reactivation is... (Read more)
- 977. Appl. Phys. Lett. 83, 1947-1949 (2003) , “Blue photoluminescence of α-Ga2S3 and α-Ga2S3:Fe2+ single crystals”, Chang-Sun Yoonα-Ga2S3 and α-Ga2S3:Fe2+ single crystals were grown by the two-zone sublimation method. The optical energy gaps of α-Ga2S3 and α-Ga2S3:Fe2+ at 10 K were found to be... (Read more)
- 978. Appl. Phys. Lett. 83, 2007-2009 (2003) , “Doping of chalcopyrites by hydrogen”, Çetin Klç and Alex ZungerFirst-principles total-energy calculations for hydrogen impurities in CuInSe2 (CIS) and CuGaSe2 (CGS) show that H+ takes up the CuSe bond center position, whereas H0 and H take up tetrahedral interstitial site next to In (in CIS) or... (Read more)
- 979. Appl. Phys. Lett. 83, 2835-2837 (2003) , “Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy”, W. S. LauDefect state D (0.8 eV) was experimentally detected in Ta2O5 capacitors with ultrathin (physical thickness <10 nm) Ta2O5 films using zero-bias thermally stimulated current spectroscopy and correlated with leakage current. Defect state D can be more... (Read more)
- 980. Appl. Phys. Lett. 83, 287-289 (2003) , “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy”, J. F. Rommeluère, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. MarfaingThe electrical activity of nitrogen as an acceptor in ZnO has been investigated in two ways. First, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy (MOVPE) yielding incorporation of nitrogen in the range 10161021 ... (Read more)
- 981. Appl. Phys. Lett. 83, 3042-3044 (2003) , “Role of boron for defect evolution in hydrogen-implanted silicon”, J. K. Lee, T. Höchbauer, R. D. Averitt, and M. NastasiThe mechanism underlying the exfoliation phenomenon in B+H coimplanted Si is presented. Compared with only H implantation, H-implanted Si samples that received a B preimplant were observed to have a decrease in implantation-induced lattice damage, in spite of enhanced blistering behavior, which was... (Read more)
- 982. Appl. Phys. Lett. 83, 3051-3053 (2003) , “Electronic structure of acceptor-donor complexes in silicon”, E. Atoro, Y. Ohama, and Y. HayafujiThe electronic structure of trimer acceptor-donor complexes in silicon Si clusters is studied using the ab initio discrete variational-Xα molecular-orbital (MO) method. The trimer complexes In2D (D = phosphorus P, arsenic As, antimony Sb, or bismuth Bi) consist of two... (Read more)
- 983. Appl. Phys. Lett. 83, 3293-3295 (2003) , “Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN”, O. Gelhausen, H. N. Klein, and M. R. PhillipsThe effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following... (Read more)
- 984. Appl. Phys. Lett. 83, 3522-3524 (2003) , “Donor–donor binding in semiconductors: Engineering shallow donor levels for ZnTe”, A. Janotti, Su-Huai Wei, and S. B. ZhangIn the past, codoping by mixing donors with acceptors has been proposed to lower the dopant ionization energy. However, the level repulsion between donor and acceptor states is weak due to symmetry considerations. Here, we propose an innovative approach to lower the donor ionization energy by... (Read more)
- 985. Appl. Phys. Lett. 83, 3525-3527 (2003) , “On the nitrogen vacancy in GaN”, D. C. LookThe dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in n-type GaN, we argue that the 70 meV donor... (Read more)
- 986. Appl. Phys. Lett. 83, 3710-3712 (2003) , “Metastability of two-hydrogen complexes in silicon”, D. J. ChadiA two-hydrogen interstitial complex (H2**" align="middle">) in crystalline Si that exhibits metastability is proposed via first-principles total energy calculations. In its most stable state, H2**" align="middle"> is 0.28 eV/H higher in energy than... (Read more)
- 987. Appl. Phys. Lett. 83, 4169-4171 (2003) , “Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion”, Chung Foong Tan and Eng Fong ChorIt has been demonstrated that, by incorporating a thin ~20 nm Si1yCy (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated.... (Read more)
- 988. Appl. Phys. Lett. 83, 4193-4195 (2003) , “Intrinsic compensation of silicon-doped AlGaN”, M. C. WagenerThe silicon doping characteristics of AlxGa1xN were investigated over the x = 0.20.5 composition range. A combination of Hall and capacitancevoltage measurements indicated a significant deepening of the Si level, as well as a systematic... (Read more)
- 989. Appl. Phys. Lett. 83, 4324-4326 (2003) , “Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering”, Peng Zhang, Hele Väinölä, Andrei A. Istratov, and Eicke R. WeberThe redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×1014 cm3 and an oxide precipitate density of 5×109 cm3. The concentrations of interstitial iron and... (Read more)
- 990. Appl. Phys. Lett. 83, 4333-4335 (2003) , “Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy”, F. Albrecht, G. Pasold, J. Grillenberger, N. Achtziger, and W. WitthuhnA deep energy level of bromine in the bandgap of GaAs was determined by means of Radiotracer deep-level transient spectroscopy (DLTS) measurements. For this purpose, the radioactive isotope 77Br was implanted in p-type as well as in n-type GaAs. In the course of repeated... (Read more)
- 991. Appl. Phys. Lett. 83, 4354-4356 (2003) , “Native hole traps of ferromagnetic Ga1–xMnxAs layers on (100) GaAs substrates”, I. T. Yoon, C. J. Park, H. Y. Cho, and T. W. KangDominant hole traps of ferromagnetic Ga1xMnxAs and epilayers with an Mn mole fraction of x2.2% and 4.4% were identified employing deep-level transient spectroscopy. Three hole traps with binding energies of EA = 0.38±0.01 eV at... (Read more)
- 992. Appl. Phys. Lett. 83, 437-439 (2003) , “Negative-U property of the oxygen vacancy defect in SiO2 and its implication for the E1[prime]" align="middle"> center in α-quartz”, D. J. ChadiThe +1 charged state of an oxygen vacancy V(O)+ in α-quartz is found to be unstable with respect to the reaction 2V(O)+V(O)0 + V(O)2+, which lowers the total energy by 2.9 eV, making it highly unlikely that... (Read more)
- 993. Appl. Phys. Lett. 83, 45-47 (2003) , “Visible luminescence of porous amorphous Si1–xCx:H due to selective dissolution of silicon”, K. RerbalRoom-temperature photoluminescence of porous hydrogenated amorphous silicon-carbon alloys (a-Si1xCx:H) has been studied for different carbon concentrations. Porous a-Si1xCx:H luminesces at energies much... (Read more)
- 994. Appl. Phys. Lett. 83, 458-460 (2003) , “Irradiation-induced recovery of disorder in gallium nitride”, W. Jiang and W. J. WeberGallium nitride has been irradiated to two fluences with energetic Au2+ ions at 300 K. Two different damage levels and depth profiles were produced that are characterized by near-surface damage accumulation and deeper-regime damage saturation. Thermal annealing at 873 K resulted in... (Read more)
- 995. Appl. Phys. Lett. 83, 4957-4959 (2003) , “Core structure and properties of partial dislocations in silicon carbide p-i-n diodes”, S. Ha, M. Benamara, and M. SkowronskiThe electroluminescence, mobility, and core nature of partial dislocations bounding stacking faults in 4H silicon carbide p-i-n diodes were investigated using optical emission microscopy and transmission electron microscopy (TEM). The stacking faults developed and expanded in... (Read more)
- 996. Appl. Phys. Lett. 83, 4981-4983 (2003) , “Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons”, Hideharu Matsuura, Koichi Aso, Sou Kagamihara, Hirofumi Iwata, and Takuya IshidaFrom the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer, an Al acceptor with ~200 meV and an unknown defect with ~370 meV are found. By irradiation with 4.6 MeV electrons, the Al acceptor density is reduced, while the unknown defect density... (Read more)
- 997. Appl. Phys. Lett. 83, 5407-5409 (2003) , “Clusters formation in ultralow-energy high-dose boron-implanted silicon”, F. Cristiano, X. Hebras, N. Cherkashin, and A. ClaverieThe formation and evolution of small cluster defects in 500 eV, 1×1015 cm2 boron-implanted silicon is investigated. These clusters are identified by high-resolution transmission electron microscopy (TEM) as small dislocation loops lying on {100} planes with an... (Read more)
- 998. Appl. Phys. Lett. 83, 665-667 (2003) , “Formation of BiOi, BiCs, and BiBsHi defects in e-irradiated or ion-implanted silicon containing boron”, J. Adey and R. JonesThe local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments... (Read more)
- 999. Appl. Phys. Lett. 83, 905-907 (2003) , “Investigation of boron diffusion in 6H-SiC”, Y. Gaop-type doping of 6H-SiC was implemented by diffusion of boron at temperatures higher than 1900 °C. The doping profiles were clearly divided into steep (zone I) and long-tail (zone II) regions. The boron diffusions in both regions are well fitted by erfc... (Read more)
- 1000. Appl. Phys. Lett. 83, 923-925 (2003) , “Interstitial H and H2 in SiC”, M. KaukonenThe properties of hydrogen in 3C and 4H type silicon carbide (SiC) are studied theoretically at the density functional level. We find that only singly positive or negative charge states of hydrogen are thermodynamically stable in SiC. The transition from the positive to the negative charge state... (Read more)
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