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- 701. Appl. Phys. Lett. 78, 231 (2001) , “Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry”, T. Henkel, Y. Tanaka, N. Kobayashi, and H. TanoueThe diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300 °C due to redistribution processes. In addition, strong out diffusion... (Read more)
- 702. Appl. Phys. Lett. 78, 2321 (2001) , “Retardation of boron diffusion in silicon by defect engineering”, Lin Shao, Xinming Lu, Xuemei Wang, Irene Rusakova, Jiarui Liu, and Wei-Kan ChuBy judiciously placing vacancy and interstitial defects at different depths, we are able to enhance or retard boron diffusion. This opens up a new approach for the formation of shallow P+n junction in silicon. After preimplantation with 50 or 500 keV Si + ions to... (Read more)
- 703. Appl. Phys. Lett. 78, 2458 (2001) , “Residual arsenic site in oxidized AlxGa1–xAs (x = 0.96)”, S.-K. Cheong, B. A. Bunker, and T. ShibataX-ray absorption fine-structure spectroscopy is used to determine the site of residual As in wet-oxidized Al0.96Ga0.04As. In a ~0.5-µm-oxide film removed from its GaAs substrate, the remaining As atoms are found to be coordinated with oxygen in the form of... (Read more)
- 704. Appl. Phys. Lett. 78, 2512 (2001) , “On the nature of the D1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy”, A. Fissel and W. RichterUndoped and boron-doped SiC layers are grown on hexagonal SiC(0001) substrates by means of solid-source molecular-beam epitaxy. Hexagonal 4H and 6HSiC layers are grown homoepitaxially via step-controlled epitaxy, whereas the cubic 3CSiC is grown pseudomorphically via nucleation and... (Read more)
- 705. Appl. Phys. Lett. 78, 2682 (2001) , “Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon”, B. Stritzker, M. Petravic, J. Wong-Leung, and J. S. WilliamsThe selectivity of interstitial-based extended defects (loops) and nanocavities for the gettering of Cu and Fe in Si has been studied. Controlled amounts of Cu and Fe were introduced by ion implantation into wafers containing pre-existing nanocavities and/or dislocations. Results show that Cu has a... (Read more)
- 706. Appl. Phys. Lett. 78, 2730 (2001) , “Structure and formation mechanism of the Ealpha[prime]" align="middle"> center in amorphous SiO2”, T. Uchino, M. Takahashi, and T. YokoWe provide a possible formation mechanism for one of the Si-related paramagnetic centers in amorphous silica, Ealpha[prime]" align="middle">, which is stable only below 200 K, on the basis of the quantum-chemical calculations. We show that the divalent Si defect can trap a... (Read more)
- 707. Appl. Phys. Lett. 78, 2843 (2001) , “Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study”, H. J. von Bardeleben and J. L. CantinPolymer-like and diamond-like hydrogenated amorphous carbon films, characterized by high spin concentrations of 1020 cm3, have been studied by multiple frequency electron paramagnetic resonance (EPR) spectroscopy at 9, 35, and 94 GHz. Whereas the low-frequency... (Read more)
- 708. Appl. Phys. Lett. 78, 2882 (2001) , “Transient photoluminescence of defect transitions in freestanding GaN”, M. A. Reshchikov and H. MorkoçDeep level defects responsible for the 2.4 eV photoluminescence (PL) band in a freestanding GaN template were studied by transient photoluminescence. A nonexponential decay of PL intensity observed at low temperature is attributed to a donoracceptor pair recombination involving a shallow donor... (Read more)
- 709. Appl. Phys. Lett. 78, 2908 (2001) , “Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers”, D. Åberg, A. Hallén, P. Pellegrino, and B. G. SvenssonIon implantation causes free charge carrier reduction due to damage in the crystalline structure. Here, nitrogen-doped 4H silicon carbide (n type) epitaxial layers have been investigated using low ion doses in order to resolve the initial stage of the charge carrier reduction. It was found... (Read more)
- 710. Appl. Phys. Lett. 78, 291 (2001) , “Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon”, P. K. GiriWe have investigated the origin of the photoluminescence (PL) W band in ion-implanted Si by studying the temperature evolution and depth profile of the related defects. Evolution of the PL spectra induced by postimplant annealing is correlated to a transition of small interstitial clusters to... (Read more)
- 711. Appl. Phys. Lett. 78, 3041 (2001) , “Yellow and green luminescence in a freestanding GaN template”, M. A. Reshchikov and H. MorkoçWe have studied a broad photoluminescence band in high-mobility freestanding 200-µm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV and a green... (Read more)
- 712. Appl. Phys. Lett. 78, 312 (2001) , “Acceptor activation of Mg-doped GaN by microwave treatment”, Shoou-Jinn Chang and Yan-Kuin SuA microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way... (Read more)
- 713. Appl. Phys. Lett. 78, 3217 (2001) , “Direct evidence for implanted Fe on substitutional Ga sites in GaN”, U. Wahl, A. Vantomme, and G. LangoucheThe lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60 keV room temperature implantation of the precursor isotope 59Mn at a dose of 1.0×1013 cm2 and annealing up... (Read more)
- 714. Appl. Phys. Lett. 78, 332 (2001) , “Evolution of deep centers in GaN grown by hydride vapor phase epitaxy”, Z.-Q. Fang and D. C. LookDeep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety... (Read more)
- 715. Appl. Phys. Lett. 78, 3442 (2001) , “Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation”, P. Pellegrino and P. LévêqueAn experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy... (Read more)
- 716. Appl. Phys. Lett. 78, 3812 (2001) , “Microscopic structure of hydrogen impurity in LiNbO3”, H. H. Nahm and C. H. ParkWe investigate the microscopic structures of interstitial and substitutional hydrogen impurities in LiNbO3 through the first-principles pseudopotential total-energy calculations. The interstitial hydrogen is located between two O atoms and bonds to one of the oxygen atoms. The hydrogen... (Read more)
- 717. Appl. Phys. Lett. 78, 3815 (2001) , “Characterization of electron-irradiated n-GaN”, S. A. Goodman, F. D. Auret, and M. J. LegodiUsing deep level transient spectroscopy, we have investigated the electron trap defects introduced in n-GaN grown using the epitaxial lateral overgrowth technique during high energy electron irradiation from a 90Sr radionuclide source. The results indicate that the major... (Read more)
- 718. Appl. Phys. Lett. 78, 3818 (2001) , “Anomalous phosphorus diffusion in Si during post-implantation annealing”, Ryangsu Kim, Yoshikazu Furuta, Syunsuke Hayashi, Tetsuya Hirose, Toshihumi Shano, Hiroshi Tsuji, and Kenji TaniguchiThe transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720 °C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P... (Read more)
- 719. Appl. Phys. Lett. 78, 3977 (2001) , “Theoretical study of sulfur–hydrogen–vacancy complex in diamond”, Takehide Miyazaki and Hideyo OkushiWe present an ab initio study of sulfur (S)hydrogen (H)vacancy (V) complexes in diamond. An SHV defect may become a much shallower donor than an isolated substitutional S defect when S in the complex is either three or five connected. Upon annealing the... (Read more)
- 720. Appl. Phys. Lett. 78, 4142 (2001) , “Positron annihilation study of Pd contacts on impurity-doped GaN”, Jong-Lam Lee and Jong Kyu KimPd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped... (Read more)
- 721. Appl. Phys. Lett. 78, 446 (2001) , “Neutron transmutation of 10B isotope-doped diamond”, K. JagannadhamDiamond samples grown by microwave plasma chemical vapor deposition and doped with 10B have been irradiated under thermal neutron flux of 1013 cm2 s1 for 76 h to examine transmutation of 10B to 7Li and the attendant... (Read more)
- 722. Appl. Phys. Lett. 78, 46 (2001) , “Pseudodonor nature of the DI defect in 4H-SiC”, L. Storasta, F. H. C. Carlsson, S. G. Sridhara, J. P. Bergman, A. Henry, T. Egilsson, A. Hallén, and E. JanzénWe use the recent findings about the pseudodonor character of the DI defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the... (Read more)
- 723. Appl. Phys. Lett. 78, 736 (2001) , “Fast through-bond diffusion of nitrogen in silicon”, Peter A. Schultz and Jeffrey S. NelsonWe report first-principles total energy calculations of interaction of nitrogen in silicon with silicon self-interstitials. Substitutional nitrogen captures a silicon interstitial with 3.5 eV binding energy forming a 100" align="middle"> split interstitial ground-state geometry, with the nitrogen... (Read more)
- 724. Appl. Phys. Lett. 78, 907 (2001) , “Stacking fault effects in pure and n-type doped GaAs”, T. M. SchmidtUsing ab initio total-energy calculations, we investigate the effects of stacking faults on the properties of dopants in pure and n-type doped GaAs. We find that the Si impurity segregates towards a GaAs stacking fault. A Si atom at a Ga site in the stacking fault, in either a neutral... (Read more)
- 725. Appl. Phys. Lett. 78, 913 (2001) , “Interaction of vacancies with interstitial oxygen in silicon”, R. A. Casali, H. Rücker, and M. MethfesselBased on first-principle total-energy calculations, we show that the majority of vacancies are trapped by interstitial oxygen in silicon wafers with a typical oxygen concentration of about 1018 cm3. Vacancies and interstitial oxygen form so called A centers with a binding... (Read more)
- 726. Appl. Phys. Lett. 78, 949 (2001) , “Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well”, A. Poyai, E. Simoen, and C. ClaeysThis letter describes a transient phenomenon in the reverse hole current of large-area shallow n+p-well junctions, giving rise to a hump at a specific reverse bias. This corresponds to a certain depletion depth in the retrograde p well, which has been fabricated... (Read more)
- 727. Appl. Phys. Lett. 79, 1094-1096 (2001) , “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy”, Wei Li and Markus PessaPositron-annihilation measurements and nuclear reaction analysis [utilizing the 14N(d,p)15N and 14N(d,He)12C reactions] in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the... (Read more)
- 728. Appl. Phys. Lett. 79, 1103-1105 (2001) , “Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing”, S. Solmi, L. Mancini, S. Milita, and M. ServidoriBoron marker-layer structures have been used to investigate the effects of B doping on the evolution of the implantation damage and of the associated transient enhanced diffusion. The samples were damaged by Si implants at different doses in the range... (Read more)
- 729. Appl. Phys. Lett. 79, 1115-1117 (2001) , “Bulk diffusion of microwave plasma activated deuterium into undoped natural diamond”, A. Laikhtman and A. HoffmanIn the present work undoped natural (100)-, (111)-, and (110)-oriented diamonds were exposed to microwave deuterium plasma. Secondary ion mass spectroscopy (SIMS) in static mode showed that surface deuterium concentration is the highest for (110) surface and the lowest one for (100)-oriented... (Read more)
- 730. Appl. Phys. Lett. 79, 1273-1275 (2001) , “Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon”, V. C. Venezia, L. Pelaz, and H.-J. L. GossmannWe have measured the evolution of the excess-vacancy region created by a 2 MeV, 1016/cm2 Si implant in the silicon surface layer of silicon-on-insulator substrates. Free vacancy supersaturations were measured with Sb dopant diffusion markers during postimplant annealing at 700,... (Read more)
- 731. Appl. Phys. Lett. 79, 1453-1455 (2001) , “Interstitial oxygen loss and the formation of thermal double donors in Si”, Young Joo Lee, J. von Boehm, and R. M. NieminenThe combination of first-principles total energy calculations and a general kinetic model, which takes into account all processes of association, dissociation, and restructuring, is used to study the kinetics of thermal double donors (TDDs) in silicon over the temperature range of 300650... (Read more)
- 732. Appl. Phys. Lett. 79, 1492-1494 (2001) , “Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si”, R. S. Brusa, W. Deng, G. P. Karwasz, and A. ZeccaWe report the direct measurement of vacancy-like defects related to oxygen in the oxygen precipitation process in Czochralski Si. The vacancy-like defects were detected by measuring the positron lifetime and narrowing of the positronelectron annihilation momentum distribution. Oxygen atoms... (Read more)
- 733. Appl. Phys. Lett. 79, 1631-1633 (2001) , “Current deep-level transient spectroscopy investigation of acceptor levels in Mg-doped GaN”, Yoshitaka Nakano and Tetsu KachiThe current deep-level transient spectroscopy (I-DLTS) technique was used to investigate acceptor levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy. For activation of the Mg dopants, rapid thermal annealing was performed with a SiO2 encapsulation layer at 850 °C... (Read more)
- 734. Appl. Phys. Lett. 79, 1834-1836 (2001) , “Fermi level dependence of hydrogen diffusivity in GaN”, A. Y. Polyakov and N. B. SmirnovHydrogen diffusion studies were performed in GaN samples with different Fermi level positions. It is shown that, at 350 °C, hydrogen diffusion is quite fast in heavily Mg doped p-type material with the Fermi level close to Ev + 0.15 eV, considerably slower in... (Read more)
- 735. Appl. Phys. Lett. 79, 1983-1985 (2001) , “Binding energy of vacancies to clusters formed in Si by high-energy ion implantation”, R. KalyanaramanMeasurements of the binding energy (Eb) of vacancies to vacancy clusters formed in silicon following high-energy ion implantation are reported. Vacancy clusters were created by 2 MeV, 2×1015 cm2 dose Si implant and annealing. To prevent... (Read more)
- 736. Appl. Phys. Lett. 79, 200-202 (2001) , “Nitrogen-related complexes in gallium arsenide”, J. E. LowtherA first-principles pseudopotential method has been used to study some potentially important metastable defects in N-doped GaAs. Formation energies have been obtained and related to those of As and Ga vacancies in the intrinsic material. Of the structures considered, two are identified that crucially... (Read more)
- 737. Appl. Phys. Lett. 79, 2402-2404 (2001) , “Can we make the SiC–SiO2 interface as good as the Si–SiO2 interface?”, Massimiliano Di VentraA simple analysis based on the bulk valence and conduction densities of states was employed to estimate the interface-state densities for interfaces between the three most common SiC polytypes (3C, 4H, and 6H) and SiO2. We found that all polytypes had comparable conduction-band... (Read more)
- 738. Appl. Phys. Lett. 79, 2405-2407 (2001) , “Deep levels of tantalum in silicon carbide and incorporation during crystal growth”, J. Grillenberger, G. Pasold, and W. WitthuhnBand-gap states of tantalum in n-type 6H and 15Rsilicon carbide (SiC) were investigated by deep-level transient spectroscopy (DLTS). The samples were doped with Ta by ion implantation followed by an annealing procedure. DLTS measurements reveal two implantation-induced band-gap... (Read more)
- 739. Appl. Phys. Lett. 79, 2570-2572 (2001) , “Identification of Si and O donors in hydride-vapor-phase epitaxial GaN”, W. J. MooreDonor impurity excitation spectra in the infrared from two high-quality, not-intentionally doped, hydride-vapor-phase epitaxial GaN wafers are reported. Two previously observed shallow donors which we designate N1 and N2 were observed in both wafers. However, spectra of one wafer are dominated by N1... (Read more)
- 740. Appl. Phys. Lett. 79, 2728-2730 (2001) , “Tellurium antisites in CdZnTe”, Muren Chu, Sevag Terterian, David Ting, C. C. Wang, H. K. Gurgenian, and Shoghig MesropianThe electrical properties of CdTe and Cd1xZnxTe crystals grown under excess tellurium by a modified Bridgman technique are critically dependent on the zinc content. Below an x value of 0.07, the as-grown CdZnTe crystals are n type while, above... (Read more)
- 741. Appl. Phys. Lett. 79, 2877-2879 (2001) , “Identification of surface anion antisite defects in (110) surfaces of III–V semiconductors”, Ph. Ebert, P. Quadbeck, and K. UrbanWe identify surface anion antisite defects in (110) surfaces of GaAs, GaP, and InP using scanning tunneling microscopy combined with density-functional theory calculations. In contrast to subsurface arsenic antisite defects, surface antisite defects are electrically inactive and have a very... (Read more)
- 742. Appl. Phys. Lett. 79, 2901-2903 (2001) , “Observation of nitrogen vacancy in proton-irradiated AlxGa1–xN”, Qiaoying Zhou and M. O. ManasrehThe optical absorption spectra of nitrogen vacancy (VN) in proton-irradiated AlxGa1xN samples are observed. The spectra obtained for samples with 0.55x1 exhibit a peak and a shoulder with their energy positions dependent on the Al mole... (Read more)
- 743. Appl. Phys. Lett. 79, 2922-2924 (2001) , “Defect annealing in Cu(In,Ga)Se2 heterojunction solar cells after high-energy electron irradiation”, A. Jasenek, H. W. Schock, J. H. Werner, and U. RauCu(In,Ga)Se2/CdS/ZnO solar cells need at least 1018 cm2 electrons of an energy of 1 MeV to degrade in their power conversion efficiency by more than 25%. Even after such high irradiation doses, annealing of the irradiated solar cells at temperatures between... (Read more)
- 744. Appl. Phys. Lett. 79, 3068-3070 (2001) , “Lattice location of phosphorus in n-type homoepitaxial diamond films grown by chemical-vapor deposition”, Masataka HasegawaThe lattice location of phosphorus dopant atoms in n-type homoepitaxial diamond {111} films grown by chemical-vapor deposition has been investigated by Rutherford backscattering spectrometry and particle-induced x-ray emission under ion-channeling conditions. It is found that phosphorus... (Read more)
- 745. Appl. Phys. Lett. 79, 3074-3076 (2001) , “Electrical characterization of 1.8 MeV proton-bombarded ZnO”, F. D. Auret, S. A. Goodman, M. Hayes, M. J. Legodi, and H. A. van LaarhovenWe report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons. From capacitancevoltage measurements, we found that ZnO is remarkably resistant to high-energy proton bombardment and that each... (Read more)
- 746. Appl. Phys. Lett. 79, 3080-3082 (2001) , “Fingerprints of two distinct defects causing light-induced photoconductivity degradation in hydrogenated amorphous silicon”, Stephan Heck and Howard M. BranzWe find distinct experimental fingerprints of two metastable defects created during illumination of hydrogenated amorphous silicon. The well-studied threefold-coordinated silicon dangling bond defect has an anneal activation energy near 1.1 eV and dominates annealing experiments above about 110... (Read more)
- 747. Appl. Phys. Lett. 79, 3089-3091 (2001) , “Formation of nonradiative defects in molecular beam epitaxial GaNxAs1–x studied by optically detected magnetic resonance”, N. Q. Thinh, I. A. Buyanova, and W. M. ChenThe formation of two nonradiative defects (i.e., an AsGa-related complex and an unknown deep-level defect with g = 2.03) in GaNxAs1x epilayers and GaAs/GaNxAs1x multiple-quantum-well structures,... (Read more)
- 748. Appl. Phys. Lett. 79, 3239-3241 (2001) , “The nature of arsenic incorporation in GaN”, A. Bell and F. A. PonceA systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4×1017 to 4.2×1018 cm3. Secondary ion mass spectroscopy data show... (Read more)
- 749. Appl. Phys. Lett. 79, 326-328 (2001) , “Room temperature persistent spectral hole burning in x-ray irradiated Eu3 + -doped borate glasses”, Woon Jin Chung and Jong HeoIrradiation of x-rays has induced room-temperature persistent spectral hole burning (PSHB) in Eu3 + -doped borate glasses melted under an inert atmosphere. Defects were formed by x-ray irradiation and these defects, especially electron trapping centers near rare-earth ions in glasses,... (Read more)
- 750. Appl. Phys. Lett. 79, 359-361 (2001) , “Mechanism of electron trapping in Ge-doped SiO2 glass”, T. Uchino, M. Takahashi, and T. YokoWe present a possible mechanism of electron trapping in Ge-doped SiO2 glass on the basis of first-principles quantum chemical calculations on clusters of atoms modeling the local structures in the glassy system. The calculations suggest that the so-called "Ge(1) and Ge(2)"... (Read more)
- 751. Appl. Phys. Lett. 79, 3630-3632 (2001) , “Reconstruction defects on partial dislocations in semiconductors”, João F. JustoUsing ab initio total energy calculations, we investigated the structural and electronic properties of reconstruction defects, or antiphase defects, in the core of a 30° partial dislocation in silicon and gallium arsenide. In GaAs, we identified two different reconstruction defects in the... (Read more)
- 752. Appl. Phys. Lett. 79, 3944-3946 (2001) , “Luminescence from stacking faults in 4H SiC”, S. G. Sridhara, F. H. C. Carlsson, J. P. Bergman, and E. JanzénA previously unreported photoluminescence spectrum observed in certain 4H SiC bipolar diodes after extended forward voltage operation is reported. We assign this emission to exciton recombination at local potential fluctuations caused by stacking faults, which are created during operation of the... (Read more)
- 753. Appl. Phys. Lett. 79, 4034-4036 (2001) , “Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique”, H. Ö. Ólafsson and E. Ö. SveinbjörnssonWe demonstrate the usefulness of the thermally-stimulated current (TSC) technique for investigating shallow interface state defects in silicon carbide metaloxidesemiconductor (MOS) structures. For dry oxides, low-temperature TSC measurements reveal a high density of near-interfacial... (Read more)
- 754. Appl. Phys. Lett. 79, 4106-4108 (2001) , “Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon”, A. Sassella and A. BorghesiThe spurious contribution of oxide precipitates to the infrared absorption of interstitial oxygen in silicon is determined from spectra collected at 7 K for samples with different initial interstitial oxygen Oi concentration subjected to a three-step thermal treatment. These data... (Read more)
- 755. Appl. Phys. Lett. 79, 4145-4147 (2001) , “Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer”, E. Napolitani, A. Coati, D. De Salvador, and A. CarneraA method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed... (Read more)
- 756. Appl. Phys. Lett. 79, 4313-4315 (2001) , “Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures?”, J. Gebauer, R. Zhao, P. Specht, and E. R. WeberWe investigate native defects in nonstoichiometric GaAs layers grown at low temperatures by molecular-beam epitaxy (LT-GaAs) doped with Be. Ga vacancies (VGa) are found by positron annihilation in all layers. The concentration of VGa is independent of the Be... (Read more)
- 757. Appl. Phys. Lett. 79, 4328-4330 (2001) , “Silicon self-diffusion under extrinsic conditions”, Ant Ural, P. B. Griffin, and J. D. PlummerSelf-diffusion in silicon is investigated under extrinsic carrier conditions by monitoring the diffusion of 30Si in isotopically enriched silicon layers with boron and phosphorus background doping. At 1000 °C, we find that the Si self-diffusion coefficient is slightly enhanced in both... (Read more)
- 758. Appl. Phys. Lett. 79, 4369-4371 (2001) , “Synthesis and characterization of luminescent ZrO2:Mn, Cl powders”, M. García-HipólitoZrO2:Mn, Cl luminescent powders have been synthesized at temperatures ranging from 250 to 500 °C. X-ray diffraction measurements indicate changes in the crystallinity of the material as a function of the processing temperature. The photoluminescence spectra show bands associated with... (Read more)
- 759. Appl. Phys. Lett. 79, 4539-4540 (2001) , “Traps at the bonded interface in silicon-on-insulator structures”, I. V. Antonova, O. V. Naumova, D. V. Nikolaev, and V. P. PopovIn this study, we compared the trap density distributions, Dit, in the band gap of silicon at the Si/thermal SiO2 interface and at the bonded interface of the silicononinsulator structure, deduced from deep level transient spectroscopy measurements. The trap... (Read more)
- 760. Appl. Phys. Lett. 79, 69-71 (2001) , “Carrier relaxation dynamics for As defects in GaN”, Bernard Gil, Aurélien Morel, Thierry Taliercio, and Pierre LefebvreLong decay times in the 50150 ns range have been measured for the characteristic blue photoluminescence that peaks at 2.6 eV in GaN:As. We interpret these long decay times according to the theoretical predictions that this blue photoluminescence is caused by the incorporation of arsenic on the... (Read more)
- 761. Appl. Phys. Lett. 79, 931-933 (2001) , “Influence of microstructure on electrical properties of diluted GaNxAs1–x formed by nitrogen implantation”, J. Jasinski, K. M. Yu, W. Walukiewicz, J. Washburn, and Z. Liliental-WeberStructural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that... (Read more)
- 762. Appl. Phys. Lett. 79, 943-945 (2001) , “Green luminescent center in undoped zinc oxide films deposited on silicon substrates”, Bixia Lin and Zhuxi FuThe photoluminescence (PL) spectra of the undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied. There are two emission peaks, centered at 3.18 eV (UV) and 2.38 eV (green). The variation of these peak intensities and that of the IV properties of... (Read more)
- 763. Appl. Phys. Lett. 79, 961-963 (2001) , “Radiotracer investigation of a deep Be-related band gap state in 4H-SiC”, F. Albrecht, J. Grillenberger, G. Pasold, and W. WitthuhnOne Be-related deep level in the band gap of 4H-SiC was identified by radiotracer deep level transient spectroscopy (DLTS). The radioactive isotope 7Be was recoil implanted into p-type as well as n-type 4H-SiC for these radiotracer experiments. DLTS spectra were taken... (Read more)
- 764. J. Appl. Phys. 91, 1046 (2002) , “Lattice site location of ion-implanted 8Li in Silicon Carbide”, S. Virdis, U. Vetter, C. Ronning, H. Kröger, and H. HofsässThe lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive 8Li ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and blocking effects of 1.6 MeV alpha particles emitted in the decay were... (Read more)
- 765. J. Appl. Phys. 91, 1198 (2002) , “Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions”, C. A. LondosThe VO defect is one of the major defects produced by irradiation in Cz-grown Si. Its presence in the infrared spectra is manifested by a localized vibration mode (LVM) band at 829 cm1. Upon annealing, the decay of this band is accompanied by the emergence in the spectra of another... (Read more)
- 766. J. Appl. Phys. 91, 1324 (2002) , “Metastable defects in 6H–SiC: experiments and modeling”, C. G. Hemmingsson, N. T. Son, O. Kordina, and E. JanzénUsing various junction space-charge techniques, annealing, and simulation, a metastable defect in 6H SiC have been characterized. We suggest a configuration coordinate diagram with three configurations, where two of them can only exist when the defect is occupied by one or more electrons. The... (Read more)
- 767. J. Appl. Phys. 91, 1354 (2002) , “Identification of silicon as the dominant hole trap in YVO4 crystals”, N. Y. Garces and L. E. HalliburtonElectron paramagnetic resonance (EPR) and electronnuclear double resonance (ENDOR) have been used to characterize the dominant hole trap in undoped Czochralski-grown yttriumorthovanadate (YVO4) crystals. A silicon impurity, present inadvertently, replaces a vanadium ion and... (Read more)
- 768. J. Appl. Phys. 91, 166 (2002) , “Influence of oxygen precipitation on the measure of interstitial oxygen concentration in silicon from the 1207 cm–1 infrared absorption band”, A. Sassella and A. BorghesiThe possible use of the absorption band at 1207 cm1 for the measurement of the concentration of interstitial oxygen (Oi) in silicon samples subjected to a precipitation thermal treatment is discussed. The results of low temperature infrared absorption measurements... (Read more)
- 769. J. Appl. Phys. 91, 178 (2002) , “Electrical characterization of magnesium implanted gallium nitride”, A. Krtschil, A. Kielburg, H. Witte, J. Christen, and A. KrostGallium nitride layers grown by molecular beam epitaxy on c axis oriented sapphire substrates were implanted with 180 keV magnesium ions with ion doses between 1×1014 and 1×1016 cm2. The implantation induced defect states were investigated by... (Read more)
- 770. J. Appl. Phys. 91, 2028 (2002) , “Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC”, T. Egilsson, I. G. Ivanov, A. Henry, and E. JanzénWe report photoluminescence excitation spectra of the nitrogen (N) donor bound excitons (BE) in 4H- and 6H-SiC. The spectra reveal several excited states of the N-BEs. An attempt is made in the article to classify the N-BE states according to a simple shell model. ©2002 American Institute of... (Read more)
- 771. J. Appl. Phys. 91, 2391 (2002) , “Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells”, Aurangzeb Khan and Masafumi YamaguchiThe study presents detailed isothermal and isochronal annealing recovery of photovoltaic parameters in n+/p InGaP solar cells after 1 MeV electron irradiation. Correlation of the solar cells characteristics with changes in the deep level transient spectroscopy data observed... (Read more)
- 772. J. Appl. Phys. 91, 2890 (2002) , “Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers”, A. Kakanakova-Georgieva, R. Yakimova, and A. HenryA comparative analysis of cathodoluminescence spectra in 4HSiC layers with different N, Al, and B content is reported. The layers were produced by sublimation epitaxy and residual impurity concentrations were determined by secondary ion mass spectrometry. Epilayers doped with B in a wide... (Read more)
- 773. J. Appl. Phys. 91, 3471 (2002) , “Site-occupying behavior of boron in compensated p-type 4H–SiC grown by sublimation epitaxy”, A. Kakanakova-Georgieva and R. YakimovaResults from electrical and optical measurements of boron in compensated p-type 4HSiC layers doped with Al, N, and B are reported. The layers were produced by sublimation epitaxy and characterized by secondary ion mass spectrometry, capacitancevoltage, and cathodoluminescence... (Read more)
- 774. J. Appl. Phys. 91, 3741 (2002) , “Interstitial boron and oxygen related defects as the origin of the deep energy level in Czochralski-grown silicon”, Yoshio Ohshita, Tuong Khanh Vu, and Masafumi YamaguchiThe structure of the B and O related defect complex in Czochralski (CZ)-grown Si crystal is theoretically studied by using ab initio calculations. When a B-doped CZ Si wafer is used as a solar cell material, light irradiation and/or minority carrier injection causes the solar cell conversion... (Read more)
- 775. J. Appl. Phys. 91, 3931 (2002) , “Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors”, A. H. Deng, Y. Y. Shan, S. Fung, and C. D. BelingUnlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level... (Read more)
- 776. J. Appl. Phys. 91, 4136 (2002) , “Difference of secondary defect formation by high energy B+ and Al+ implantation into 4H–SiC”, Toshiyuki OhnoThe difference of secondary defect formation between high-energy B+ and Al+ implanted layers was investigated by transmission electron microscopy. At the same volume concentration of implanted ions, the density of secondary defects in the Al+ implanted layers is... (Read more)
- 777. J. Appl. Phys. 91, 4438 (2002) , “Electron paramagnetic resonance in boron carbide”, M. G. Kakazey, J. G. Gonzalez-Rodriguez, and M. V. VlasovaElectron paramagnetic resonance (EPR) signals from powdered samples of boron carbide B4C are recorded at g factor 2.0028±0.0002. The dependence on temperature and thermal treatment of the samples is studied. We demonstrated that native defects of boron carbide and conduction... (Read more)
- 778. J. Appl. Phys. 91, 4988 (2002) , “Native defects and self-diffusion in GaSb”, M. Hakala, M. J. Puska, and R. M. NieminenThe native defects in GaSb have been studied with first-principles total-energy calculations. We report the structures and the formation energies of the stable defects and estimate the defect concentrations under different growth conditions. The most important native defect is the GaSb... (Read more)
- 779. J. Appl. Phys. 91, 5158 (2002) , “Deep levels in strongly Si-compensated GaAs and AlGaAs”, Tadashige Sato and Toshio IshiwatariFive electron traps were detected successfully in heavily Si-doped GaAs and AlxGa1xAs of low Al content with a Si concentration of above 1×1019 cm3 using deep level transient spectroscopy. The junctions were grown by liquid... (Read more)
- 780. J. Appl. Phys. 91, 5307 (2002) , “Vacancy-type defects in BaTiO3/SrTiO3 structures probed by monoenergetic positron beams”, Akira UedonoThin BaTiO3 films grown on SrTiO3 substrates were characterized by means of positron annihilation. The films were deposited by molecular-beam epitaxy without using oxygen source. We measured the Doppler broadening spectra of annihilation radiation and x-ray diffraction of the... (Read more)
- 781. J. Appl. Phys. 91, 5765 (2002) , “Deep levels and trapping mechanisms in chemical vapor deposited diamond”, Mara Bruzzi, David Menichelli, and Silvio SciortinoDetector-grade undoped chemical vapor deposited (CVD) diamond samples have been studied with thermally stimulated currents (TSC) and photoinduced current transient spectroscopy (PICTS) analyses in the temperature range 300650 K. Two previously unknown defects have been identified,... (Read more)
- 782. J. Appl. Phys. 91, 5831 (2002) , “Hydrogen-defect complexes formed by neutron irradiation of hydrogenated silicon observed by optical absorption measurement”, N. Fukata, T. Ohori, and M. SuezawaNeutron-irradiation-induced defects in hydrogenated Si were investigated by detecting optical absorption due to their complexes with hydrogen. Specimens were doped with hydrogen by heating in H2 gas at 1300 °C followed by quenching in water. They were then irradiated with neutrons.... (Read more)
- 783. J. Appl. Phys. 91, 5867 (2002) , “Chemical origin of the yellow luminescence in GaN”, S. O. KucheyevThe influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act... (Read more)
- 784. J. Appl. Phys. 91, 6209 (2002) , “Cathodoluminescence from BN buried layers by high-dose ion implantation”, L. Barbadillo, M. Cervera, M. J. Hernández, P. Rodríguez, and J. PiquerasBoron, nitrogen, and carbon ions were co-implanted in silicon wafers, and subsequently annealed. Infrared spectra show the formation of BN-rich buried layers. The presence of a band at 1375 cm1 characteristic of boron nitride in a hexagonal configuration has been observed. Traces of... (Read more)
- 785. J. Appl. Phys. 91, 6388 (2002) , “Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis”, Y. ZhangDamage evolution and subsequent recovery in 4HSiC epitaxial layers irradiated with 1.1 MeV Al22 + " align="middle"> molecular ions at 150 K to ion fluences from 1.5×1013 to 2.25×1014 Al cm2 were studied by Rutherford... (Read more)
- 786. J. Appl. Phys. 91, 6488 (2002) , “Defects in silicon-on-insulator wafers and their hydrogen interaction studied by monoenergetic positron beams”, Akira Uedono and Zhi Quan ChenVacancy-type defects in separation-by-implanted oxygen wafers were probed using monoenergetic positron beams. We measured the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons. The species of the defects in Si-on-insulator (SOI) layers were identified as... (Read more)
- 787. J. Appl. Phys. 91, 6580 (2002) , “Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovConcentrations of deep hole traps were measured in a set of hydride vapor phase epitaxy grown samples with thicknesses varying from 2.6 to 68 µm. Results were obtained from low temperature capacitancevoltage measurements before and after illumination and from deep level transient... (Read more)
- 788. J. Appl. Phys. 91, 7926 (2002) , “Electron paramagnetic resonance study of La0.7Ca0.3–xBaxMnO3 lanthanum manganites”, A. N. UlyanovElectron paramagnetic resonance (ESR) study of La0.7Ca0.3xBaxMnO3 manganites (x = 0; 0.15; 0.3) is presented. Experimentally observed exponential decreasing of line intensity on temperature is in agreement with the deduced one... (Read more)
- 789. J. Appl. Phys. 91, 815 (2002) , “Paramagnetic defects in ultrafine silicon particles”, Minoru Dohi, Hiroshi Yamatani, and Tetsuo FujitaTwo defects in the surface oxide layer of ultrafine Si particles, temporarily named an EXL center and an EXH center, were investigated by electron spin resonance (ESR). The Si particles were prepared by a conventional gas evaporation method. The specimens were... (Read more)
- 790. J. Appl. Phys. 91, 884 (2002) , “Defects in N/Ge coimplanted GaN studied by positron annihilation”, Yoshitaka Nakano and Tetsu KachiWe have applied positron annihilation spectroscopy to study the depth distributions and species of defects in N-, Ge-, and N/Ge-implanted GaN at dosages of 1×1015 cm2. For all the implanted samples, Ga vacancies introduced by ion-implantation are found to diffuse... (Read more)
- 791. J. Appl. Phys. 91, 9182 (2002) , “Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC”, F. Schmid, M. Laube, and G. PenslAluminum-doped 4H-SiC epilayers with [0001]- or [1120]-oriented faces were implanted with phosphorus and subsequently annealed in a temperature range of 15501700 °C. The electrical activation of phosphorus ions was studied by Hall effect investigations. Identical free electron... (Read more)
- 792. J. Appl. Phys. 91, 9887 (2002) , “Effect of intrinsic defects on the electron mobility of gallium arsenide grown by molecular beam epitaxy and metal organic chemical vapor deposition”, Anouar JorioTemperature dependent electron mobility measurements are reported for lightly doped n-type gallium arsenide (GaAs) grown by metal organic chemical vapor deposition (MOCVD GaAs). Using the BrooksHerring model, the charge state of the impurity scattering centers is deduced to be 1. The... (Read more)
- 793. J. Appl. Phys. 92, 1221 (2002) , “Thermoluminescence study of stoichiometric LiNbO3 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonThermoluminescence (TL), optical absorption, and electron paramagnetic resonance (EPR) have been used to characterize point defects in Mg-doped stoichiometric LiNbO3. A broad TL emission, peaking at 440 nm, is observed near 94 K when these crystals are irradiated at 77 K and then rapidly... (Read more)
- 794. J. Appl. Phys. 92, 1238 (2002) , “Dissociation of nitrogen-oxygen complexes by rapid thermal anneal heat treatments”, J. L. Libbert, L. Mule'Stagno, and M. BananFloat zone silicon melt doped or implanted with nitrogen exhibits absorption bands in the midinfrared range that are caused by localized vibration modes of nitrogen pairs. Czochralski-grown silicon crystals melt doped with nitrogen exhibit both these lines and additional absorption lines related to... (Read more)
- 795. J. Appl. Phys. 92, 188 (2002) , “Grown-in defects in nitrogen-doped Czochralski silicon”, Xuegong Yu, Deren Yang, Xiangyang Ma, Jiansong Yang, Liben Li, and Duanlin QueGrown-in defects including oxygen precipitates and voids in nitrogen-doped Czochralski (NCZ) silicon have been investigated. It was found that the formation of grown-in oxygen precipitates in NCZ silicon can be divided into two stages. The large precipitates supposed to be enhanced by... (Read more)
- 796. J. Appl. Phys. 92, 1906 (2002) , “Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films”, E. San Andrés, A. del Prado, I. Mártil, and G. González-DíazThe bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600... (Read more)
- 797. J. Appl. Phys. 92, 1968 (2002) , “Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance”, H. W. Dong, Y. W. Zhao, Y. H. Zhang, J. H. Jiao, J. Q. Zhao, and L. Y. LinDeep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have been characterized by optical transient current spectroscopy (OTCS). Compared with the OTCS result of the SI InP prepared by annealing in pure phosphorus (PP) ambiance, the IP SI InP presents only two... (Read more)
- 798. J. Appl. Phys. 92, 2437 (2002) , “Optical properties of oxygen precipitates and dislocations in silicon”, S. Binetti, S. Pizzini, E. Leoni, and R. SomaschiniPhotoluminescence (PL) and deep level transient spectroscopy (DLTS) measurements were used to study the origin of optical emissions in the 0.81.0 eV region of selected oxygen precipitated and dislocated silicon samples. It was shown that the D1 band, present in both types of samples, is the... (Read more)
- 799. J. Appl. Phys. 92, 2501 (2002) , “On the nature of ion implantation induced dislocation loops in 4H-silicon carbide”, P. O. Å. Persson and L. HultmanTransmission electron microscopy was used to investigate 11B, 12C, 14N, 27Al, 28Si, and 37Ar ion-implanted 4H-SiC epilayers and subsequent defect formation after high temperature annealing. During the annealing process extrinsic... (Read more)
- 800. J. Appl. Phys. 92, 2575 (2002) , “Substitutional and interstitial carbon in wurtzite GaN”, A. F. WrightFirst-principles theoretical results are presented for substitutional and interstitial carbon in wurtzite GaN. Carbon is found to be a shallow acceptor when substituted for nitrogen (CN) and a shallow donor when substituted for gallium (CGa). Interstitial carbon... (Read more)
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