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- 91. Phys. Rev. Lett. 86, 4560-4563 (2001) , “Structure and Generation Mechanism of the Peroxy-Radiacal Defect in Amorphous Silica”, T. Uchino, M. Takahashi, and T. YokoWe provide a new model of the peroxy-radical defect in amorphous silica on the basis of quantum-chemical calculations applied to clusters of atoms to model the defect. In this model, the 29Si hyperfine splittings of the peroxy radical arise from a single silicon, in agreement with the... (Read more)
- 92. Phys. Rev. Lett. 86, 1054 (2001) , “Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process”, Takahide Umeda, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki, and Kazunobu TanakaElectron spin resonance (ESR) observation of dangling-bond states on the Si(111)- (7×7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)- (7×7) surface is associated with the appearance of a new dangling-bond center at... (Read more)Si SiO2| EPR STM/AFM/SPM| Oxygen Pb Ps0 Ps1 Silicon dangling-bond interface surface .inp files: Si/surface(111) | last update: Masatoshi Sasaki
- 93. Appl. Phys. Lett. 77, 866 (2000) , “Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(000) face”, K. Fukuda, W. J. Cho, K. Arai, S. Suzuki, J. Senzaki, T. TanakaThe C(000) face of silicon carbide (SiC) has superior properties such as a faster oxidation ratio and a smoother surface compared with the Si(0001) face. We have investigated the oxidation and post-oxidation annealing effects on the capacitancevoltage and the interface state density... (Read more)
- 94. Appl. Phys. Lett. 76, 3771-3773 (2000) , “Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum"”, Tetsuya D. Mishima and Patrick M. LenahanThe electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our... (Read more)
- 95. Appl. Phys. Lett. 76, 1585 (2000) , “Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing”, K. Fukuda, S. Suzuki, T. Tanaka, K. AraiThe effects of hydrogen annealing on capacitancevoltage (CV) characteristics and interface-state density (Dit) of 4HSiC metaloxidesemiconductor (MOS) structures have been investigated. The Dit was reduced to as low as... (Read more)
- 96. J. Appl. Phys. 88, 1784-1787 (2000) , “Electron Spin Resonance Centers Associated with Oxygen Precipitates in Czochralski Silicon Crystals”, M. Koizuka, H. Yamada-Kaneta.We have previously concluded that the oxygen-precipitate-associated defects that we identified by the deep levels at Ev + 0.30 eV and Ec0.25 eV were the Pb centers generated in the interface between the oxygen... (Read more)
- 97. Phys. Rev. B 61, 8393-8403 (2000) , “Dissociation Kinetics of Hydrogen-Passivated Pb Defects at the (111)Si/SiO2 Interface”, A. Stesmans.An electron-spin-resonance study has been carried out, both isothermally and isochronically, of the recovery under vacuum annealing from the hydrogen passivated state (symbolized as HPb) of paramagnetic Pb centers (Si3?Si•) at the (111)Si/SiO2... (Read more)
- 98. Phys. Rev. B 61, 16068-16076 (2000) , “Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface”, A. Stesmans, B. NouwenAn electron spin resonance (ESR) study has been carried out on the Pb centers (interfacial ?Si?Si3) in standard thermal (111)Si/SiO2, of which, in the as-grown state, a density 4.9×1012 cm-2 is inherently incorporated. The Pb density... (Read more)
- 99. Phys. Rev. Lett. 85, 2773-2776 (2000) , “Dangling Bond Defects at Si-SiO2 Interfaces: Atomic Structure of the Pb1 Center”, A. Stirling, A. Pasquarello, J.-C. Charlier, R. CarUsing a first-principles approach, we characterize dangling bond defects at Si-SiO2 interfaces by calculating hyperfine parameters for several relaxed structures. Interface models, in which defect Si atoms remain close to crystalline sites of the substrate upon relaxation, successfully... (Read more)
- 100. Mater. Res. Soc. Symp. Proc. 573, 107 (1999) , “ELECTRICAL AND OPTICAL STUDY OF CHARGE TRAPS AT PASSIVATED GaAs SURFACES”, Y. Mochizuki
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