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- 226. Jpn. J. Appl. Phys. 38, 1172 (1999) , “Capacitively-Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Solar Cells”, Martin S.Brandt , Ralph T.Neuberger , Martin W.Bayerl , Martin StutzmannSpin-dependent transport processes in hydrogenated amorphous silicon (a-Si:H) solar cells at high frequencies are studied with capacitively-detected magnetic resonance (CDMR). A resonant increase of the capacitance at room temperature is found with a g-factor of 2.0055, characteristic for the spin-dependent trapping of electrons at neutral dangling bonds. It is shown that with the help of spin-dependent capacitance measurements quantitative information on the defect density in the device can be obtained, a particular advantage over conventional electrically detected magnetic resonance (EDMR) where resonant changes of the dc conductivity are measured. (Read more)
- 227. Mater. Sci. Eng. B 58, 71 (1999) , “Hydrogen enhancement of thermally induced interface degradation in thermal (111) Si/SiO2 traced by electron spin resonance”, A. Stesmans, V. V. Afanas’ev.The process of interface degradation induced in (111)Si/SiO2 by postoxidation annealing (POA) in vacuum, previously identified by electron spin resonance (ESR) as creation of persistent Pb (Si/Si3) interface defects, is found to be strongly enhanced (≈6 times) when performed in H2 ambient,... (Read more)
- 228. Mater. Sci. Eng. B 58, 52 (1999) , “Dipolar Interactions between Unpaired Si Bonds at the (111)Si/SiO2 Interface”, A. Stesmans, B. Nouwen.Direct experimental evidence for the dipolar interactions within the two-dimensional Pb defect system at the Si/SiO2 interface is provided by the observation of anisotropy in the electron spin resonance spectra. This observation was enabled through distinct interface degradation by post-oxidation... (Read more)
- 229. Mater. Sci. Eng. B 58, 171-178 (1999) , “Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and S. Zh. TokmoldinRecent deep level transient spectroscopy (DLTS), electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy data on interactions of self-interstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was... (Read more)
- 230. Microelectron. Eng. 48, 113 (1999) , “Nature of the Pb1 Interface Defect in (100)Si/SiO2 as Revealed by Electron Spin Resonance 29Si Hyperfine Structure”, A. Stesmans, V. V. Afanas’ev.Observation by electron spin resonance of the full angular dependence of the hyperfine (hf) interaction spectrum associated with the interfacial Pb1 defect in thermal (100)Si/SiO2 shows that the dominant interaction arises from a single 29Si atom. The hf tensor displays weakly monoclinic I (nearly... (Read more)
- 231. Phys. Rev. B 59, 4849 (1999) , “Electron-spin-resonance center of dangling bonds in undoped a-Si:H”, T. Umeda, S. Yamasaki, J. Isoya, K. Tanaka.A variety of electron-spin-resonance (ESR) spectra of dangling bond (g=2.0055) in undoped hydrogenated amorphous silicon (a-Si:H) have been measured by the echo-detected ESR of pulsed ESR as well as the usual continuous-wave (cw) ESR for a wide range of two experimental parameters of microwave... (Read more)
- 232. Phys. Rev. B 59, 2773 (1999) , “Electron Paramagnetic Resonance and Photoluminescence Study of Er-Impurity Complexes in Si”, J. D. Carey, R. C. Barklie, J. F. Donegan, F. Priolo, G. Franzò, S. Coffa.Electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy have been used to examine the structure and optical properties of erbium-impurity complexes formed in float-zone Si by multiple-energy implants at 77 K of Er together with either O or F. After implantation a 2-?m-thick... (Read more)
- 233. Phys. Rev. B 59, 13242 (1999) , “Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures ”, C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. SchfflerStrained Si/Si0.75Ge0.25 heterostructures, grown by solid source e-beam evaporation molecular-beam epitaxy on Si(100) substrates, have been studied by electrically detected magnetic resonance. Samples with a low-temperature mobility of about 105 cm2/V s... (Read more)
- 234. Phys. Rev. Lett. 83, 372 (1999) , “Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica”, Peter E. Blöchl and James H. StathisHydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, are analyzed using first-principles calculations. Energetics and charge-state levels of oxygen vacancies, hydrogen, and their complexes in the silica framework are mapped out. The neutral hydrogen... (Read more)
- 235. phys. stat. sol. (b) 210, 13 (1999) , “Neutral Vacancies in Group-IV Semiconductors”, A. Zywietz, J. Furthmüller, F. BechstedtAb initio plane-wave-supercell calculations are performed for the neutral monovacancies in silicon, silicon carbide and diamond using ultrasoft non-normconserving Vanderbilt pseudopotentials. We study the structure, the energetics and the single-particle energy spectrum. The local symmetry, the... (Read more)
- 236. Physica B 273-274, 938 (1999) , “Confinement Effects on Phosphorus Donors Embedded in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz and C. A. J. AmmerlaanMagnetic resonance of shallow donor center phosphorus is used to track size-related changes of energy band structure in silicon powders. Small conduction band upshifts of several meV are determined for nanocrystals of approximately d=100 nm diameter and smaller. These are interpreted as the onset of... (Read more)
- 237. Physica B 273-274, 524 (1999) , “Tin-Vacancy Complexes in e-Irradiated n-Type Silicon”, Marco Fanciulli and Jørgen R. BybergElectron irradiated n-type float-zone silicon containing tin has been investigated by EPR. In addition to the well known Si-G29 signal due to the SnV0 complex we have observed a group of similar EPR signals with strongly anisotropic, near-trigonal g tensors, which we label DK4. The corresponding... (Read more)
- 238. Physica B 273-274, 445 (1999) , “ESR study of Fe–H complexes in Si”, Toru Takahashi and Masashi SuezawaWe studied the influence of hydrogen (H) on the properties of Fe in Si crystals based on ESR measurement. Specimens were prepared from an n-type Si crystal (phosphorus concentration; 1.5×1016 cm−3). After chemical polishing, they were doped with 57Fe by a vapor method and with H by... (Read more)
- 239. Physica B 273-274, 404 (1999) , “Dependence of Electrically Detected Magnetic Resonance Signal Shape from Iron-Contaminated Silicon Wafers on the Thermal Treatment of the Samples”, T. Mchedlidze, K. Matsumoto, T. –C. Lin, M. Suezawa.The shape of the electrically detected magnetic resonance (EDMR) signal from iron–contaminated Czochralski-grown silicon (CZ–Si) samples strongly depends on the thermal treatments applied to the samples before and after the contamination procedure, although the average g-value of the... (Read more)
- 240. Physica B 273-274, 350 (1999) , “Structure of Er-Related Centers in Si”, J. D. Carey and F. PrioloElectron paramagnetic resonance (EPR) measurements have been performed on samples of Er implanted FZ Si which have been co-implanted with O ions. For an Er concentration of 1019/cm3 well-defined Er3+ centers with monoclinic and trigonal symmetry are observed in samples with 1020 O/cm3 but are... (Read more)
- 241. Physica B 273-274, 296 (1999) , “Assignment of EPR Spectrum for Bistable Thermal Donors in Silicon”, L. F. Makarenko, N. M. Lapchuk and Ya. I. LatushkoIt has been shown that bistability of thermal double donors (TDD) in silicon can be observed by EPR technique. The spectrum of a bistable TDD species (TDD2) has been isolated using heat-treatment of Czochralsky-grown n-type silicon crystals with initial resistivity 4.5 Ω cm, at temperature... (Read more)
- 242. Physica B 273-274, 279 (1999) , “Identification of Cadmium-Related Centers in Silicon”, A. Näser, W. Gehlhoff and H. OverhofThe electronic and geometric structures of a new Cd-related center with trigonal symmetry is investigated by electron paramagnetic resonance (EPR). Isotope doping with the isotopes 111Cd and 57Fe confirmed, that the defect consists of one single Cd atom and one isolated Fe atom with a center axis in... (Read more)
- 243. Physica B 273-274, 264 (1999) , “EPR proof of the negatively charged acceptor state Zn− in silicon”, W. Gehlhoff, A. Näser, H. Bracht.The electronic properties of Zn in monocrystalline silicon were studied by means of electron paramagnetic resonance (EPR). In high-ohmic p- and n-type Si doped with Zn two new line sets were observed. One of them show the characteristic behavior of the and transitions of a Γ8 state in... (Read more)
- 244. Physica B 273-274, 256 (1999) , “Infrared Absorption Study of a New Dicarbon Center in Silicon”, E. V. Lavrov, B. Bech Nielsen, J. Byberg and J. L. LindströmInfrared absorption measurements on n-type silicon doped with carbon and irradiated with electrons at room temperature have revealed new absorption lines at 527.4 and 748.7 cm−1. The 748.7 cm−1 line is observed only when the sample is cooled down in the dark and the spectra are... (Read more)
- 245. Physica B 273-274, 239 (1999) , “Atomic and Electronic Structure of Hydrogen-Passivated Double Selenium Donors in Silicon”, P. T. Huy, C. A. J. Ammerlaan and T. GregorkiewiczSelenium–hydrogen-related defects in silicon have been investigated by magnetic resonance. Two new electron paramagnetic resonance (EPR) spectra Si-NL60 and Si-NL61 of selenium–hydrogen complexes were observed. By application of the electron nuclear double resonance (ENDOR) and field... (Read more)
- 246. Physica B 273-274, 204 (1999) , “Hydrogen Interactions with Interstitial- and Vacancy-Type Defects in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin and Yu. V. GorelkinskiiIR and EPR studies of hydrogen interactions with defects in silicon implanted with protons and deuterons were carried out. An analysis of temperature dependence of Si–H local mode anharmonicity, using isotope substitution of H by D, revealed that anharmonicity is sensitive to the environment... (Read more)
- 247. Physica B 273-274, 180 (1999) , “The A Center Binding a Single Hydrogen Atom in Crystalline Silicon Observed by EPR”, P. Johannesen, J. R. Byberg, B. Bech Nielsen.Electron paramagnetic resonance measurements on proton- and deuteron-implanted silicon crystals reveal a new signal from a vacancy-type defect with spin , which is observable only in oxygen-rich material. The signal is strongly temperature-dependent, displaying monoclinic-I symmetry below 180 K and... (Read more)
- 248. Physica B 273-274, 171 (1999) , “Hydrogen-Induced Extended Complexes in Silicon”, Yu. V. Gorelkinskii, Kh. A. Abdullin and B. N. MukashevNew EPR spectrum, labeled Si-AA17, forms upon annealing at 200°C in irradiated high-purity hydrogen-containing silicon and is stable up to 450°C. The AA17 defect has D3d symmetry, electronic spin S=1 and it is paramagnetic in a neutral charge state. An analysis of 29Si hf interaction has... (Read more)
- 249. Physica B 273-274, 1027 (1999) , “Capacitively detected magnetic resonance of defects in MOSFETs ”, M. S. Brandt, R. Neuberger and M. StutzmannIn p-channel enhancement MOSFETs, a spin-dependent change of the drain-gate capacitance is observed at bias voltages near accumulation. Two resonances, with g=1.9979 and g||=2.008 as well as g≈4.9 are attributed to defects induced by processing as well as to transition metal impurities. The... (Read more)
- 250. Physica B 273-274, 1015 (1999) , “Electron spin resonance study of the interaction of hydrogen with the (1 1 1)Si/SiO2 interface: Pb-hydrogen interaction kinetics”, A. Stesmans.The thermal interaction kinetics of interfacial Si dangling bond Pb defects (Si3≡Si·) in (1 1 1)Si/SiO2, including passivation in molecular hydrogen (pictured as PbH formation) and dissociation in vacuum, is readdressed. An initial simple thermal model had concluded simple exponential... (Read more)
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