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- 501. J. Appl. Phys. 99, 113507 (2006) , “Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon”, D. Babonneau, M.-F. Beaufort, A. Declémy, J.-F. Barbot, and J.-P. SimonThe formation and growth of defects, including nanocavities and extended interstitial-type defects, created by helium implantation in silicon (50 keV, 7.1015 cm2) in the temperature range of 100550 °C has been investigated by grazing incidence small-angle... (Read more)
- 502. Phys. Rev. B 74, 035202 (2006) , “Computation of the Stark effect in P impurity states in silicon”, A. Debernardi, A. Baldereschi, and M. FanciulliWe compute within the effective-mass theory and without adjustable parameters the Stark effect for shallow P donors in Si with anisotropic band structure. Valley-orbit coupling is taken into account in a nonperturbative way and scattering effects of the impurity core are included to properly... (Read more)
- 503. J. Appl. Phys. 99, 064501 (2006) , “Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors”, Yixin Li, Larry E. Antonuk, Youcef El-Mohri, Qihua Zhao, Hong Du, Amit Sawant, and Yi WangThe effects of x-ray irradiation on the transfer and noise characteristics of excimer-laser-annealed polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been examined at dose levels up to 1000 Gy. Parameters including mobility, threshold voltage, subthreshold swing, and leakage... (Read more)
- 504. J. Appl. Phys. 99, 063509 (2006) , “On the origin of the Staebler-Wronski effect”, Thomas KrügerThe parametrization of our recently proposed model of the Staebler-Wronski effect (SWE) is improved, which leads to an even better agreement with the experimental photoconductivity of light-soaked a-Si:H. The numerical solution of the essential equation exhibits well the typical SWE behavior,... (Read more)
- 505. J. Appl. Phys. 99, 103510 (2006) , “Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion”, G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, and A. CarneraWhile it is known that F modifies dopant diffusion in crystalline Si, the physical mechanisms behind this process are still unclear. In this work we report experimental studies about the F control of the point defect density in preamorphized Si layers. These studies put the basis for the... (Read more)
- 506. J. Appl. Phys. 99, 103509 (2006) , “X-ray scattering study of hydrogen implantation in silicon”, Nicolas Sousbie, Luciana Capello, Joël Eymery, François Rieutord, and Chrystelle LagaheThe effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile from the scattering data is described. A... (Read more)
- 507. J. Appl. Phys. 99, 103507 (2006) , “Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2/Si interfaces”, D. Skarlatos, P. Tsouroutas, V. Em. Vamvakas, and C. TsamisIn this work we perform a systematic study of the dissolution of a dislocation loop layer under the influence of inert SiO2/Si and nitrogen-rich SiO2/Si interfaces. The composition of the dislocation loop layer was just after its formation 10%20% Frank dislocation loops... (Read more)
- 508. J. Appl. Phys. 99, 093706 (2006) , “Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon”, Mara Bruzzi, David Menichelli, Monica Scaringella, Jaakko Härkönen, Esa Tuovinen, and Zheng LiA quantitative study about the thermal activation of oxygen related thermal donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal donor formation has been performed through isothermal annealing at 430 °C up to a total time of 120 min. Space charge... (Read more)
- 509. J. Appl. Phys. 99, 043509 (2006) , “Influence of metal trapping on the shape of cavities induced by high energy He+ implantation”, R. El Bouayadi, G. Regula, M. Lancin, B. Pichaud, and M. DesvignesIn He implantation induced cavities highly contaminated with metals (Au, Ni, Pt) we found that, when no three-dimensional structure is observed, the shape of the cavities can be strongly modified depending on the nature of the metal and on its trapped quantity. The equilibrium shape of cavities is... (Read more)
- 510. Phys. Rev. Lett. 97, 135901 (2006) , “Vacancy-Assisted Diffusion in Silicon: A Three-Temperature-Regime Model”, Damien Caliste and Pascal PochetIn this Letter we report kinetic lattice Monte Carlo simulations of vacancy-assisted diffusion in silicon. We show that the observed temperature dependence for vacancy migration energy is explained by the existence of three diffusion regimes for divacancies. This characteristic has been rationalized... (Read more)
- 511. J. Appl. Phys. 99, 013701 (2006) , “Electronically activated boron-oxygen-related recombination centers in crystalline silicon”, Karsten Bothe and Jan SchmidtTwo different boron- and oxygen-related recombination centers are found to be activated in crystalline silicon under illumination or electron injection in the dark, both leading to a severe degradation in the carrier lifetime. While one center forms on a time scale of seconds to minutes, the... (Read more)
- 512. Phys. Rev. B 74, 121201 (2006) , “Prediction of the anomalous fluorine-silicon interstitial pair diffusion in crystalline silicon”, Scott A. Harrison, Thomas F. Edgar, and Gyeong S. HwangWe propose a diffusion pathway for a fluorine-silicon interstitial pair (F-Sii) in silicon based on extensive first-principles density functional calculations. We find the F-Sii pair to be most stable in the singly positive charge state under intrinsic conditions and can exist... (Read more)
- 513. Appl. Phys. Lett. 89, 112122 (2006) , “Enhancement of resistivity of Czochralski silicon by deep level manganese doping”, Kanad Mallik, C. H. de Groot, P. Ashburn, and P. R. WilshawDeep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm2 of Mn at 100 keV followed by rapid thermal... (Read more)
- 514. Phys. Rev. Lett. 97, 116101 (2006) , “Oxygen Migration, Agglomeration, and Trapping: Key Factors for the Morphology of the Si-SiO2 Interface”, L. Tsetseris and S. T. PantelidesThe measured activation energies for oxide growth rates at the initial and late stages of oxidation of Si are 2 and 1.2 eV, respectively. These values imply that oxidation can proceed at temperatures much smaller than the 800 °C normally used to obtain devices with exceptionally smooth... (Read more)
- 515. Appl. Phys. Lett. 79, 4243 (2001) , “Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices”, Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, Shinya Ito, Takeshi Toda, Kiyotaka ImaiThe local lattice strain around the channel in metaloxidesemiconductor (MOS) field-effect transistors of 0.1 µm gate length was measured by using convergent-beam electron diffraction. It was found that the normal strain along the gate-length direction is compressive beneath the... (Read more)
- 516. Appl. Phys. Lett. 80, 2278 (2002) , “Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction ”, Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, Kensuke OkonogiWe clarified the generation of process-induced dislocations around a shallow trench isolation (STI) by using convergent-beam electron diffraction. Comparing the resolved shear strain (RSS) of 12 slip systems, we found that at the trench bottom corner the RSS on slip systems (1 1 1)[0 1 1] and... (Read more)
- 517. Phys. Rev. B 74, 085201 (2006) , “Hydrogen dynamics and light-induced structural changes in hydrogenated amorphous silicon”, T. A. Abtew and D. A. DraboldWe use accurate first-principles methods to study the network dynamics of hydrogenated amorphous silicon, including the motion of hydrogen. In addition to studies of atomic dynamics in the electronic ground state, we also adopt a simple procedure to track the H dynamics in light-excited states.... (Read more)
- 518. Appl. Phys. Lett. 89, 092113 (2006) , “Large fluorine-vacancy clusters in Si and their capture efficiency for self-interstitials”, Giorgia M. Lopez and Vincenzo FiorentiniBased on ab initio density-functional energetics for saturated (n=2m+2) fluorine-vacancy clusters FnVm for m up to 4, the authors set up a model showing that (a) fluorine-vacancy (FV) aggregates in Si can form in any... (Read more)
- 519. Phys. Rev. Lett. 97, 106402 (2006) , “E Center in Silicon Has a Donor Level in the Band Gap”, A. Nylandsted Larsen, A. Mesli, K. Bonde Nielsen, H. Kortegaard Nielsen, L. Dobaczewski, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergIt has been an accepted fact for more than 40 years that the E center in Si (the group-V impurityvacancy pair)one of the most studied defects in semiconductorshas only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction... (Read more)
- 520. Appl. Phys. Lett. 89, 031911 (2006) , “Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon”, Y. L. Huang, E. Simoen, C. Claeys, J. M. Rafí, P. Clauws, R. Job, and W. R. FahrnerIn this work, the formation of donors in n-type high resistivity magnetic Czochralski-grown silicon wafers, directly exposed to a hydrogen plasma, is investigated by a combination of capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements.... (Read more)
- 521. Appl. Phys. Lett. 89, 013508 (2006) , “Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers”, H. F. W. Dekkers, L. Carnel, and G. BeaucarneHydrogenation by high temperature rapid annealing of SiNx:H is found to be very effective on the defects responsible for the carrier trapping effect in multicrystalline silicon. The passivation effect is reversible and is annihilated by a long thermal annealing. As for the... (Read more)
- 522. Phys. Rev. B 74, 045217 (2006) , “Vacancy clustering and diffusion in silicon: Kinetic lattice Monte Carlo simulations”, Benjamin P. Haley, Keith M. Beardmore, and Niels Grønbech-JensenDiffusion and clustering of lattice vacancies in silicon as a function of temperature, concentration, and interaction range are investigated by kinetic lattice Monte Carlo simulations. It is found that higher temperatures lead to larger clusters with shorter lifetimes on average, which grow by... (Read more)
- 523. Phys. Rev. B 74, 035205 (2006) , “Mechanisms of arsenic clustering in silicon”, F. F. Komarov, O. I. Velichko, V. A. Dobrushkin, and A. M. MironovA model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms... (Read more)
- 524. Phys. Rev. B 74, 033309 (2006) , “Effect of the triplet state on the random telegraph signal in Si n-MOSFETs”, Enrico Prati, Marco Fanciulli, Giorgio Ferrari, and Marco SampietroWe report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude... (Read more)
- 525. Phys. Rev. B 74, 033304 (2006) , “5-7-5 line defects on As/Si(100): A general stress-relief mechanism for V/IV surfaces”, W. E. McMahon, Iskander G. Batyrev, T. Hannappel, J. M. Olson, and S. B. ZhangAn entire family of nano-scale trenches, ridges, and steps has been observed experimentally on AsH3-exposed Si(100). Some of these line structures have been observed previously, but their structures have remained a mystery. Theoretical modeling shows that they are all based upon the same... (Read more)
- 526. Phys. Rev. B 73, 195209 (2006) , “Electrical activity of the PtH2 complex in silicon: High-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique”, Vl. Kolkovsky, O. Andersen, L. Dobaczewski, A. R. Peaker, and K. Bonde NielsenHigh-resolution Laplace deep-level spectroscopy combined with the uniaxial stress technique has been used to study stress-energy piezospectroscopic tensor components of the platinum-dihydrogen complex in silicon. The effect of stress on the defect has been observed either as the stress-induced... (Read more)
- 527. Phys. Rev. B 73, 245210 (2006) , “First-principles investigation of a bistable boron-oxygen interstitial pair in Si”, A. Carvalho, R. Jones, M. Sanati, S. K. Estreicher, J. Coutinho, and P. R. BriddonLocal density functional calculations are used to predict and compare the properties of the two distinct interstitial boron-interstitial oxygen (BiOi) complexes recently reported in the literature. The electronic and free energies, as well as the small... (Read more)
- 528. Phys. Rev. B 73, 245203 (2006) , “Diffusion mechanisms for silicon di-interstitials”, Yaojun A. Du, Richard G. Hennig, and John W. WilkinsTight-binding molecular dynamics and density-functional simulations on silicon seeded with a di-interstitial reveal its detailed diffusion mechanisms. The lowest-energy di-interstitial performs a translation/rotation diffusion-step with a barrier of 0.3 eV and a prefactor of 11 THz followed by a... (Read more)
- 529. Appl. Phys. Lett. 89, 044107 (2006) , “Photoluminescence imaging of silicon wafers”, T. Trupke, R. A. Bardos, M. C. Schubert, and W. WartaPhotoluminescence imaging is demonstrated to be an extremely fast spatially resolved characterization technique for large silicon wafers. The spatial variation of the effective minority carrier lifetime is measured without being affected by minority carrier trapping or by excess carriers in space... (Read more)
- 530. Appl. Phys. Lett. 89, 042102 (2006) , “Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration”, T. Buonassisi, A. A. Istratov, M. D. Pickett, M. A. Marcus, T. F. Ciszek, and E. R. WeberSynchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate... (Read more)
- 531. Appl. Phys. Lett. 89, 041916 (2006) , “Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process”, Dong Wang, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, and Masahiko NakamaeCrystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5 °C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased... (Read more)
- 532. Appl. Phys. Lett. 88, 211910 (2006) , “Optical properties of shuffle dislocations in silicon”, S. Pizzini, S. Binetti, A. Le Donne, A. Marzegalli, J. RabierThe radiative recombination processes in dislocated float zone silicon samples deformed under gigapascal stresses were studied by photoluminescence (PL) spectroscopy. The observed shuffle dislocations present a reconstructed core and their generation is accompanied by the introduction of point... (Read more)
- 533. Appl. Phys. Lett. 88, 212102 (2006) , “Experimental determination of the local geometry around In and In–C complexes in Si”, F. d'Acapito, Y. Shimizu, S. Scalese, M. Italia, P. Alippi, S. GrassoThe electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by codoping with C. From theoretical studies In and C are expected to pair in the Si matrix in... (Read more)
- 534. Appl. Phys. Lett. 87, 262108 (2005) , “Fast-forming boron-oxygen-related recombination center in crystalline silicon”, Karsten Bothe and Jan SchmidtThe mechanism of a fast carrier lifetime degradation effect proceeding within seconds in boron-doped Czochralski silicon is investigated. The decrease in the carrier lifetime is attributed to the formation of a deep boron-oxygen-related recombination center with a strongly asymmetric... (Read more)
- 535. Appl. Phys. Lett. 87, 231905 (2005) , “Structure, stability, and diffusion of arsenic-silicon interstitial pairs”, Scott A. Harrison, Thomas F. Edgar, and Gyeong S. HwangRecent experimental studies [A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999); R. Kim, T. Hirose, T. Shano, H. Tsuji, and K. Taniguchi, Jpn. J. Appl. Phys. 41, 227 (2002); S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, and V. Soncini, J. Appl. Phys. 94,... (Read more)
- 536. Appl. Phys. Lett. 88, 073112 (2006) , “Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network”, Yasuhiko Ishikawa, Chihiro Yamamoto, and Michiharu TabeA two-dimensional dislocation network artificially embedded in a silicon-on-insulator (SOI) layer was examined as the source of lattice strain to generate a periodic potential. A screw dislocation network with the period of 20 nm was formed in an SOI layer using a twist bonding of two SOI wafers.... (Read more)
- 537. Appl. Phys. Lett. 88, 224102 (2006) , “Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography”, D. R. Black, J. C. Woicik, M. Erdtmann, T. A. LangdoX-ray topographical images from thin (50 nm) strained-Si films grown on relaxed, planarized crystalline SiGe-on-Si (001) virtual substrates have been imaged by glancing-incidence monochromatic x-ray topography. This extremely asymmetric diffraction geometry, utilizing (311) diffraction planes, can... (Read more)
- 538. Phys. Rev. B 73, 115208 (2006) , “Evidence for a trigonal dimer of antibonding hydrogen in crystalline silicon”, R. N. Pereira and B. Bech NielsenThe infrared absorption spectra recorded on silicon crystals implanted with protons at cryogenic temperatures reveal three lines at 812, 1608, and 1791 cm1, which originate from the excitation of local vibrational modes of a H defect. Measurements carried out on crystals subjected... (Read more)
- 539. Phys. Rev. B 73, 115202 (2006) , “Annealing of electron-, proton-, and ion-produced vacancies in Si”, S. Dannefaer, V. Avalos, D. Kerr, R. Poirier, V. Shmarovoz, and S. H. ZhangPositron lifetime and Doppler measurements were performed on float-zone-refined and variously doped Czochralski-grown Si. The samples were irradiated by various particles (e, p, Kr) with energies between 2 MeV and 245 MeV. Electron or proton irradiation gave rise to... (Read more)
- 540. Phys. Rev. B 73, 113202 (2006) , “Demonstration of the effect of uniaxial stress on the electronic structure of bond-centered muonium in Si”, K. H. Chow, B. Hitti, and J. S. LordWe demonstrate that compressive uniaxial stress modifies the electronic structure of bond-centered muonium (MuBC0" align="middle">) in Si. The stress was applied along the 100 direction of the sample and results in a significant change in the hyperfine parameters of... (Read more)
- 541. Appl. Phys. Lett. 88, 162117 (2006) , “Electric-field-induced charge noise in doped silicon: Ionization of phosphorus donors”, A. J. Ferguson, V. C. Chan, A. R. Hamilton, and R. G. ClarkWe report low-frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the substrates are in the insulating regime. By measuring the SET... (Read more)
- 542. Appl. Phys. Lett. 88, 153507 (2006) , “Influence of trap states on dynamic properties of single grain silicon thin film transistors”, F. Yan, P. Migliorato, R. IshiharaThe transient properties of single grainthin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient... (Read more)
- 543. Appl. Phys. Lett. 88, 142104 (2006) , “Defects in silicon nanowires”, R. P. WangDefects in silicon nanowires have been investigated using the electron spin resonance (ESR) method. The ESR signals consist of three features: a strong resonance at g=2.002 49, a weak line at g=2.000 48, and a broad feature at g=2.005 41. From the saturation behavior and... (Read more)
- 544. Appl. Phys. Lett. 88, 112101 (2006) , “Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon”, T. Schenkel, J. A. Liddle, A. Persaud, A. M. Tyryshkin, S. A. Lyon, R. de Sousa, K. B. Whaley, J. Bokor, J. Shangkuan, I. ChakarovWe implanted ultralow doses (2×1011 cm2) of antimony ions (121Sb) into isotopically enriched silicon (28Si) and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed electron spin... (Read more)
- 545. Phys. Rev. Lett. 93, 255502 (2004) , “Formation of Thermal Vacancies in Highly As and P Doped Si”, V. Ranki and K. SaarinenUsing positron annihilation measurements we observed the formation of thermal vacancies in highly As and P doped Si. The vacancies start to form at temperatures as low as 650 K and are mainly undecorated at high temperatures. Upon cooling the vacancies form stable vacancy-impurity complexes such as... (Read more)
- 546. Phys. Rev. B 46, 12335 (1992) , “Microscopic mechanism of atomic diffusion in Si under pressure ”, Osamu Sugino and Atsushi OshiyamaWe have performed the first-principles total-energy calculations on the atomic diffusion of group-V impurities in Si, and have revealed the pressure effect on the activation energy of the diffusion. For the vacancy mechanism, the activation energies for P, As, and Sb decrease with pressure. For the... (Read more)
- 547. Physica B 308-310, 13 (2001) , “Misfortune, challenge, and success: defects in processed semiconductor devices ”, H. Cerva, M. Engelhardt, M. Hierlemann, M. Pölzl and T. TheniklProcess-induced defects are still a key issue in semiconductor device production. The increasing miniaturization and number of process steps as well as the introduction of new materials and processes make the understanding of defect generation more complex. In this paper, we describe small defects... (Read more)
- 548. Solid-State Electronics 24, 869 (1981) , “Theoretical and practical investigation of the thermal generation in gate controlled diodes ”, Jan van der Spiegel and Gilbert J. DeclerckThe different components of thermal generation in a gate controlled diode are studied theoretically and experimentally. Expressions for the generation current in the space charge layer, the diffusion current from the quasi-neutral bulk and the surface generation current are derived for a... (Read more)
- 549. Appl. Phys. Lett. 81, 3488 (2002) , “On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors”, Ming-Jer Chen and Ming-Pei LuOnoff switching behaviors or two-level random telegraph signals (RTS) are measured in the low voltage (1.40 V<VG<0.88 V) edge direct tunneling currents in ultrathin gate stack (10 Å oxide + 10 Å nitride) n-channel... (Read more)
- 550. Appl. Phys. Lett. 48, 1270 (1986) , “Capture and emission kinetics of individual Si:SiO2 interface states ”, M. J. Kirton and M. J. UrenBy studying the random telegraph signals in the drain current of small area metal-oxide-semiconductor field-effect transistors as a function of temperature, we show that carrier capture into individual interface states takes place via a multiphonon process. We demonstrate that the interface trap... (Read more)
- 551. Phys. Rev. Lett. 86, 272 (2001) , ““Metallic” and “Insulating” Behavior of the Two-Dimensional Electron Gas on a Vicinal Surface of Si MOSFET's”, S. S. Safonov, S. H. Roshko, A. K. Savchenko, A. G. Pogosov, and Z. D. KvonThe resistance R of the 2DEG on the vicinal Si surface shows unusual behavior which is very different from that in Si (100) MOSFET's studied earlier. The low-temperature crossover from dR/dT<0 (“insulator”) to dR/dT>0 (“metal”) occurs at a low resistance of... (Read more)
- 552. Appl. Phys. Lett. 61, 2569 (1992) , “Spin-dependent effects in porous silicon”, M. S. Brandt and M. StutzmannLuminescent anodically etched porous silicon is studied with electron spin resonance, optically detected magnetic resonance, and spin-dependent photoconductivity. The Pb center, the silicon dangling bond at the crystalline Si/SiO2 interface, is found to be the... (Read more)
- 553. Appl. Phys. Lett. 78, 3633 (2001) , “Detection of two dangling bond centers with trigonal symmetry at and below a (100) Si/SiO2 interface”, B.Langhanki , S.Greulich-Weber , J-M.Spaeth , J.MichelUsing electrical detection of electron paramagnetic resonance (EDEPR), two defect centers located at the Si (100)/SiO2 interface and in regions several µm below the silicon surface have been observed at a low temperature. Improvements in the EDEPR measurement technique enabled the... (Read more)
- 554. J. Appl. Phys. 83, 4042 (1998) , “Electrically Detected Magnetic Resonance Signal from Iron Contaminated Czochralski Silicon Crystal”, T. Mchedlidze and K. MatsumotoThe electrical detection of magnetic resonance (EDMR) measurement, a detection method for the spin-dependent recombination, was applied to characterize iron contaminated silicon samples grown by the Czochralski method. The observed signal was different than previously reported electron paramagnetic... (Read more)
- 555. Appl. Phys. Lett. 64, 1690 (1994) , “Temperature-dependent study of spin-dependent recombination at silicon dangling bonds”, D. Vuillaume, D. Deresmes, and D. StiévenardElectrical detection of magnetic resonance is used in a large temperature range (150350 K) to analyze the spin-dependent recombination properties of silicon dangling bonds at the Si-SiO2 interface (created by high-field electron injections) and of silicon dangling bond clusters in... (Read more)
- 556. Physica B 273-274, 1027 (1999) , “Capacitively detected magnetic resonance of defects in MOSFETs ”, M. S. Brandt, R. Neuberger and M. StutzmannIn p-channel enhancement MOSFETs, a spin-dependent change of the drain-gate capacitance is observed at bias voltages near accumulation. Two resonances, with g=1.9979 and g||=2.008 as well as g≈4.9 are attributed to defects induced by processing as well as to transition metal impurities. The... (Read more)
- 557. Appl. Phys. Lett. 76, 1467 (2000) , “Spin-dependent capacitance of silicon field-effect transistors”, M. S. Brandt, R. T. Neuberger, and M. StutzmannUnder electron spin resonance conditions, changes of the capacitance of vertical field-effect transistors are observed, due to spin-dependent trapping of charge carriers by defects at the interface between the substrate and the channel region. The spectra obtained by capacitively detected magnetic... (Read more)
- 558. Phys. Rev. B 52, 1144 (1995) , “Electron Paramagnetic Resonance Versus Spin-Dependent Recombination: Excited Triplet States of Structural Defects in Irradiated Silicon”, L. S. Vlasenko, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan.Upon illumination some structural defects in irradiated silicon can be excited into the metastable triplet S=1 states. These triplet states can be involved in the excess-carriers recombination process. This paper provides a theoretical treatment of spin-dependent recombination (SDR) via an excited... (Read more)
- 559. J. Appl. Phys. 84, 2193 (1998) , “Two signals in electrically detected magnetic resonance of platinum-doped silicon p–n junctions”, Yoshiaki Kamigaki, Takao Miyazaki, Naotsugu Yoshihiro, Kikuo Watanabe, and Ken'etsu YokogawaWe have found two electrically detected magnetic resonance (EDMR) signals at room temperature in forward-biased platinum (Pt)-doped (111) silicon pn junction diodes with a linearly graded junction. The g values of the two EDMR signals are 1.991 (signal 1) and 1.978 (signal... (Read more)
- 560. Solid State Commun. 76, 1083 (1990) , “Electrically detected magnetic resonance in p-n junction diodes ”, F. Rong, E. H. Poindexter, M. Harmatz and W. R. BuchwaldG. J. GerardiElectrically-detected magnetic resonance from spin-dependent recombination or generation has been observed in various Si p-n junction diodes. The g-values varied widely among similar diodes of different manufacture; most differed from Si damage at g ≈ 2.0055 reported by other researchers. The... (Read more)
- 561. Solid State Commun. 34, 803 (1980) , “Spin dependent surface recombination in silicon p-n junctions: The effect of irradiation”, D. Kaplan and M. PepperWe present the results of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the Si---SiO2 interface is increased, and saturation of the spin resonance increases the diode forward current... (Read more)
- 562. Appl. Phys. Lett. 68, 1669 (1996) , “Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2”, J. H. StathisA spin-dependent trap-assisted tunneling current has been detected in a thin (44.5 Å) SiO2 film. An electron paramagnetic resonance signal, obtained from the tunnel current, provides the first microscopic information regarding the identity of defects responsible for stress-induced... (Read more)
- 563. Microelectron. Eng. 22, 143 (1993) , “An improved theory of spin dependent recombination : application to the Pb center at the Si-SiO2 interface”, M. Lannoo, D. Vuillaume, D. Deresmes , D. StiévenardWe propose an improved theory of the spin dependent recombination at defects in p-n junctions. This theory accounts for the experimental observations on the Pb center at the Si-SiO2 interface. (Read more)
- 564. Appl. Phys. Lett. 52, 1161 (1988) , “Spin-dependent recombination in irradiated Si/SiO2 device structures”, R. L. Vranch, B. Henderson, M. PepperWe report studies of spin-dependent recombination at the Si/SiO2 interface in electron irradiated (100) and (111) p-channel metal-oxide-silicon field-effect transistors and metal-oxide-silicon wafers. Electron spin resonance transitions on the Pb center... (Read more)
- 565. Appl. Phys. Lett. 63, 352 (1993) , “General expression for the electrically detected magnetic resonance signal from semiconductors”, Z. Xiong and D. J. MillerA general expression is obtained for the electrically detected magnetic resonance (EDMR) signal from semiconductors based on the electron-hole pair model. The expression is applicable for all values of the trapping, dissociation, and recombination rates of the levels involved. Measurements of the... (Read more)
- 566. Solid-State Electronics 34, 835 (1991) , “Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes”, F. C. Rong, W. R. Buchwald, E. H. Poindexter, W. L. Warren , D. J. KeebleThis paper presents a new model for spin-dependent recombination and generation processes based on the electrical detection of magnetic resonance in semiconductor p-n junction diodes. Based on a modified Shockley-Read recombination statistics, this model differs from those models previously proposed... (Read more)
- 567. J. Non-Cryst. Solids 198-200, 267 (1996) , “Semiclassical model of electrically detected magnetic resonance in undoped a-Si:H”, K. Lips, C. Lerner and W. FuhsA simple model for spin-dependent photoconductivity is presented based on rate equations for the density of spin pairs in singlet and triplet configuration. The pairs are formed by electrons localized in the conduction band tail and neutral dangling bonds (e—D°). We take into... (Read more)
- 568. Phys. Rev. B 6, 436 (1972) , “Spin-Dependent Recombination on Silicon Surface”, Daniel J. LepineIt is shown that, in pure silicon, the recombination time of photocreated excess carriers depends on the relative spin orientation of the carriers and of the recombination centers. This is evidenced by the observed decrease of the photoconductivity when the magnetization of the recombination centers... (Read more)
- 569. Rev. Sci. Instrum. 71, 486 (2000) , “Development and evaluation of an electrically detected magnetic resonance spectrometer operating at 900 MHz”, Toshiyuki Sato, Hidekatsu Yokoyama, Hiroaki Ohya, Hitoshi KamadaAn optimized design for an electrically detected magnetic resonance (EDMR) spectrometer is described. The bias and detection circuits were fabricated according to this design. The noise generated in the instrument was calculated from theory and by performing experiment. It was shown that the... (Read more)
- 570. J. Appl. Phys. 49, 2401-2406 (1978) , “Resistance changes induced by electron-spin resonance in ion-implanted Si : P system”, K. Murakami, S. Namba, N. Kishimoto, K. Masuda, K. GamoThe ESR-induced changes in the dc resistance, /||ESR, of P-ion-implanted silicon have been observed for the first time. The transfer of absorbed Zeeman energy at liquid-He temperature has been investigated. The /||ESR signals observed were a narrow line with a g value of... (Read more)
- 571. J. Appl. Phys. 77, 1546 (1995) , “Electrical Detection of Electron Paramagnetic Resonance: New Possibilities for the Study of Point Defects”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.An investigation of the possibilities to measure electron paramagnetic resonance (EPR) with electrical detection (EDEPR) by measuring the microwave or radio frequency-induced change of the photoconductivity of various bulk Si samples containing shallow and deep level defects is presented. It was... (Read more)
- 572. Appl. Phys. Lett. 68, 1102 (1996) , “Electrical Detection of Electron Nuclear Double Resonance in Silicon”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.Electrical detection of electron nuclear double resonance (EDENDOR) is demonstrated using shallow P donors in silicon. The EDENDOR spectra are compared with conventional ENDOR spectra. With EDENDOR, both the 31P hyperfine as well as 29Si superhyperfine interactions could be... (Read more)
- 573. Appl. Phys. Lett. 76, 2280 (2000) , “Defects in planar Si pn junctions studied with electrically detected magnetic resonance”, T. Wimbauer, K. Ito, Y. Mochizuki, M. Horikawa, T. Kitano, M. S. Brandt, M. StutzmannWe report electrically detected magnetic resonance (EDMR) measurements on planar Si pn junctions which were isolated via local oxidation of silicon (LOCOS). The investigations of the as-fabricated diodes show the presence of various defects. We observe Pb centers at... (Read more)
- 574. Mater. Sci. Forum 143-147, 1337 (1994) , “Electrically detected electron paramagnetic resonance”, S.Greulich-Weber
- 575. Appl. Phys. Lett. 58, 1620 (1991) , “Excitons and light-induced degradation of amorphous hydrogenated silicon”, Martin S. Brandt and Martin StutzmannExcitonic states involved in electronic transport of undoped amorphous hydrogenated silicon (a-Si:H) are observed using spin-dependent photoconductivity (SDPC). Upon light soaking the excitonic signal decreases with regard to the SDPC signal due to recombination via dangling bonds. It has... (Read more)
- 576. Phys. Rev. B 68, 245105 (2003) , “Theory of time-domain measurement of spin-dependent recombination with pulsed electrically detected magnetic resonance”, Christoph Boehme and Klaus LipsThe theoretical foundations of the time domain measurement of spin-dependent charge carrier recombination by means of pulsed electrically detected magnetic resonance (EDMR) are outlined. Pulsed EDMR is based on the transient measurement of electrical currents in semiconductors after a coherent... (Read more)
- 577. Phys. Rev. Lett. 91, 246603 (2003) , “Electrical Detection of Spin Coherence in Silicon”, Christoph Boehme and Klaus LipsExperimental evidence is presented showing that photocurrents in silicon can be used as highly sensitive readout probes for coherent spin states of localized electrons, the prime candidates for quantum bits in various semiconductor based quantum computer concepts. Conduction electrons are subjected... (Read more)
- 578. J. Appl. Phys. 90, 6026-6031 (2001) , “Oxygen-Related Defects in Low-Dose Separation-by-Implanted Oxygen Wafers Probed by Monoenergetic Positron Beams”, A. Uedono, Z. Q. Chen, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, T. Mikado.The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined from measurements of Doppler broadening spectra of the annihilation radiation. Vacanyoxygen complexes were introduced by implanting 180-keV oxygen at (26)×1017 ... (Read more)
- 579. Phys. Rev. B 8, 2810 (1973) , “EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster (V5-)”, Y. H. Lee, J. W. Corbett.EPR studies are carried out for the float-zone intrinsic silicon irradiated with reactor neutrons up to the total fluence 1018 n/cm2. Details of the Si29 hyperfine structure and of the g tensor in the P-1 spectrum are observed with respect to temperature from 77 to... (Read more)Si| EPR neutron-irradiation| 29Si P1 Silicon cluster(>3) vacancy .inp files: Si/V5- | last update: Takahide Umeda
- 580. Mater. Sci. Eng. B 73, 60-63 (2000) , “EPR study of He-implanted Si”, B. Pivac, B. Rakvin, R. Tonini, F. Corni and G. OttavianiElectron paramagnetic resonance has been used to study the influence of thermal treatments on defect evolution in helium-implanted Czochralski single-crystal silicon. It is shown that the thermal treatment induces helium migration and capturing by vacancy clusters that transform into pressurized... (Read more)
- 581. Physica B 302-303, 212-219 (2001) , “Magnetic resonance studies of shallow donor centers in hydrogenated Cz–Si crystals”, B. Langhanki, S. Greulich-Weber, J. –M. Staeth, V. P. Markevich, L. I. Murin, T. Mchedlidze, M. Suezawa.A complex magnetic resonance study (EPR, electrically detected EPR, ENDOR) of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1–D3) were observed earlier by means of infrared absorption measurements in hydrogenated... (Read more)
- 582. Rev. Sci. Instrum. 48, 135-141 (1977) , “EPR Techniques for Studying Defects in Silicon”, K. L. Brower.Due to long spin-lattice relaxation times and low defect concentrations, the EPR study of defects in irradiated silicon requires special experimental capabilities. The superheterodyne spectrometer described in this paper, which has been used in numerous defect studies, can detect 1010... (Read more)
- 583. J. Appl. Phys. 59, 3255-3266 (1986) , “Thermodynamic and Kinetic Considerations on the Equilibrium Shape for Thermally Induced Microdefects in Czochralski Silicon”, W. A. Tiller, S. Hahn, F. A. Ponce.Using thermodynamic and kinetic considerations, we explain the quasiequilibrium, morphological, and structural characteristics of thermally induced oxide precipitates in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon/silica interface is used to explain the... (Read more)
- 584. J. Appl. Phys. 43, 3499-3506 (1972) , “Electron Paramagnetic Resonance of the lattice Damage in Oxygen-Implanted Silicon”, K.L. Brower and Wendland BeezholdThe nature of the lattice damage produced at room temperature in ion-implanted intrinsic and n-type silicon has been studied as a function of 160-keV O+ ion fluence using electron paramagnetic resonance (EPR). The known EPR spectra observed were the negative divacancy (Si-G7), the... (Read more)Si| EPR ion-implantation neutron-irradiation| 31P D G7 Oxygen P3 Phosphorus S1 S2 SL2 Silicon amorphous vacancy .inp files: Si/SL2 | last update: Takahide Umeda
- 585. J. Appl. Phys. 91, 8919-8941 (2002) , “Transient Enhanced Diffusion of Boron in Si”, S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander, H. E. Maes.On annealing a boron implanted Si sample at ~800 °C, boron in the tail of the implanted profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more. After annealing for a sufficiently long time, the enhanced diffusion saturates. The enhanced diffusion is... (Read more)
- 586. J. Appl. Phys. 89, 5997-6001 (2001) , “Oxygen Recoil Implant from SiO2 Layers into Single-Crystalline Silicon”, G. Wang, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch, P. Merrill, R. Bleiler.It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted... (Read more)
- 587. Phys. Rev. B 38, 3395-3399 (1988) , “Electrical and Optical Properties of Defects in Silicon Introduced by High-Temperature Electron Irradiation”, Jian-Guo Xu, Fang Lu, and Heng-Hui Sun2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy Ec-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present... (Read more)
- 588. J. Appl. Phys. 54, 179-183 (1983) , “The Mechanism of the Enhancement of Divacancy Production by Oxygen During Electron Irradiation of Silicon. II. Computer Modeling”, G. S. Oehrlein, I. Krafcsik, J. L. Lindström, A. E. Jaworowski, and J. W. CorbettNumerical tests of possible models for the oxygen dependence of the divacancy introduction rate in silicon electron irradiated at room temperature were performed on a computer. Only the model in which oxygen traps Si self-interstitials can reproduce all the experimental data. Our modeling results... (Read more)
- 589. Phys. Rev. B 61, 2657 (2000) , “Divacancy-Tin Complexes in Electron-Irradiated Silicon Studied by EPR”, M. Fanciulli, J. R. Byberg.n- and p-type float-zone silicon containing 1018-cm-3 tin were irradiated with 2 MeV electrons to a dose of 1018 cm-2 and subsequently examined by electron paramagnetic resonance (EPR). The p-type material yields only the well-known Si-G29 signal due to... (Read more)
- 590. Mater. Sci. Eng. B 71, 249 (2000) , “New (S=1) EPR AA17 center in silicon — microplatelets or precursor of platelets?”, Yu. V. Gorelkinskii, Kh. A. Abdullin, B. N. Mukashev.New (S=1) EPR spectrum (labeled Si-AA17) is observed in irradiated high-purity hydrogen-contained silicon after annealing at ≥200°C. The AA17 defect has D3d symmetry with g=2.0028, g=2.0106; A(29Si)=175.0 MHz, A=89.0 MHz; and D=±33.6 MHz, D=±16.8 MHz. It is paramagnetic in a... (Read more)
- 591. Phys. Rev. B 61, 7448-7458 (2000) , “Hydrogen passivation of the selenium double donor in silicon:?A study by magnetic resonance”, P. T. Huy, C. A. J. Ammerlaan, T. Gregorkiewicz, D. T. Don.The passivation by hydrogen of selenium double donors in silicon has been investigated by magnetic resonance. Hydrogen was introduced by heat treatment at high temperatures in an atmosphere of water vapor. Two spectra were observed, labeled Si-NL60 and Si-NL61 for further reference, both showing... (Read more)
- 592. Phys. Rev. B 61, 4659-4666 (2000) , “Identification of the Oxygen-Vacancy Defect Containing a Single Hydrogen Atom in Crystalline Silicon”, P. Johannesen, B. Bech Nielsen, J. R. Byberg.Float-zone and Czochralski-grown silicon crystals have been implanted with protons or deuterons at ?50 K. Electron paramagnetic resonance measurements reveal a new signal in the spectrum of the Czochralski-grown (oxygen-rich) material. This signal is strongly temperature dependent, displaying a... (Read more)
- 593. Phys. Rev. B 61, 1918 (2000) , “EPR investigation of manganese clusters in silicon”, J. Martin, J. Wedekind, H. Vollmer, and R. LabuschManganese centers were investigated in silicon specimens with initial doping concentrations between 1.5×1015 P cm-3 and 6×1015 B cm-3. All known Mn centers could be observed but the cluster Mni3Mni was missing in highly-boron-doped... (Read more)
- 594. Mater. Sci. Eng. B 71, 263 (2000) , “Comparison of Electronic Structure and Properties of Hydrogen-Associated and Thermal Double Donors in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and B. PajotInfrared (IR) and electron paramagnetic resonance (EPR) studies of quenching-dependent hydrogen-related double donor (HDD) formed in proton-implanted n-Si and p-Si upon annealing above 300°C were carried out. IR data taken at liquid He and N2 reveal that quenching-dependent IR absorption lines... (Read more)
- 595. Phys. Rev. B 71, 245203 (2005) , “Electrical Activity of Er and Er-O Centers in Silicon”, D. Prezzi, T. A. G. Eberlein, R. Jones, J. S. Filhol, J. Coutindo, M. J. Shaw, P. R. Briddon.Spin-polarized density functional calculations are carried out on Er and Er-oxygen defects in crystalline Si. We find that the interstitial site is favored but the diffusion barrier of Eri is only 1.9 eV, and inevitably Eri forms complexes with impurities and... (Read more)
- 596. Phys. Rev. B 71, 115204 (2005) , “Electron Spin Resonance Study of Paramagnetic Centers in Neutron-Irradiated Heat-Treated Silicon”, D. Pierreux and A. StesmansElectron spin resonance (ESR) was used to study neutron-induced defects in silicon as functions of anneal temperature Tan. For Tan below 200 °C, the ESR response is dominated by the Si-P3 and Si-P6 spectra, as observed before. At Tan=200 ... (Read more)
- 597. Phys. Rev. B 63, 233202 (2001) , “Tetrahedral Mni4 Cluster in Silicon”, J. Wedekind, H. Vollmer, R. Labusch.Mni40 clusters were investigated by electron paramagnetic resonance in silicon specimens with initial doping concentrations between 1.5×1015?P cm-3 and 5×1016?B cm-3. In n-type samples and in intrinsic samples, we obtained the EPR... (Read more)
- 598. Appl. Phys. Lett. 78, 1571 (2001) , “Hydrogen Passivation and Activation of Oxygen Complexes in Silicon”, S. N. Rashkeev, M. Di Ventra, and S. T. PantelidesWe report first-principles calculations in terms of which we describe the role of hydrogen in passivating or activating oxygen complexes in Si. In particular we find that attaching H to a pre-existing oxygen cluster can change the electric activity of the cluster. Furthermore, the addition of a... (Read more)
- 599. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
- 600. Physica B 302-303, 249-256 (2001) , “Hydrogen-Enhanced Clusterization of Intrinsic Defects and Impurities in Silicon”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, M. F. Tamendarov and S. Zh. TokmoldinFormation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)
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