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- 501. Sov. Phys. Solid State 31, 1376 (1989) , “Equivalent States of Muonium and Hydrogen in Silicon”, R. B. Gelfand, V. A. Gordeev, Yu. V. Gorelkinski?, R. F. Konopleva, S. A. Kuten, A. V. Mudry?, N. N. Nevinny?, Yu. V. Obukhov, V. I. Rapoport, A. G. Ulyashin, V. G. Firsov.An experimental investigation was made of the hydrogenic states having an anisotropic hyperfine structure, which were formed in silicon single crystals as a result of implantation of high-energy muons and protons. The characteristics of the states of "anomalous" muonium (Mu*) and a hydrogen center (Si-AA9, investigated by the methods of muon spin rotation (μSR) and electron spin resonance (ESR) in silicon allowing for the isotopic effect, were found to be similar. This was the basis for hypothesizing the existence of two equivalent structures in silicon (Mu*) and Si-AA9), differing only with respect to the mass of the hydrogenic atom occuring in each of the centers. Semiemprecal cluster calculations were made of the electronic structure of the se centers under conditions of hydrogen (muonium) localization at different lattice interstices. The parameters of the hyperfine interaction and the electronic g factors of the impurity atom were calculated. The most probable configuration of the Mu* and Si-AA9 complexes, and their charge state were established.
- 502. Appl. Phys. Lett. 53, 508 (1988) , “Passivation of Paramagnetic Si-SiO2 Interface States with Molecular Hydrogen”, K. L. Brower.Dry thermal oxides were grown on (111) silicon substrates at 850 °C. The Pb centers associated with this (111) Si-SiO2 interface were observed with electron paramagnetic resonance to be stable under subsequent annealing in vacuum up to at least 850 °C. The... (Read more)
- 503. Appl. Phys. Lett. 53, 1711 (1988) , “Observation of iron pileup and reduction of SiO2 at the Si-SiO2 interface”, Yoichi Kamiura and Fumio Hashimoto and Motohiro IwamiIt was found by secondary-ion mass spectrometry in-depth profiling technique that approximately 1×1020 iron atoms/cm3 accumulated at the Si-SiO2 interface of oxidized silicon crystals where iron was introduced by the indiffusion prior to the oxidation at 1000... (Read more)
- 504. Appl. Phys. Lett. 52, 1161 (1988) , “Spin-dependent recombination in irradiated Si/SiO2 device structures”, R. L. Vranch, B. Henderson, M. PepperWe report studies of spin-dependent recombination at the Si/SiO2 interface in electron irradiated (100) and (111) p-channel metal-oxide-silicon field-effect transistors and metal-oxide-silicon wafers. Electron spin resonance transitions on the Pb center... (Read more)
- 505. Phys. Rev. B 38, 9674-9685 (1988) , “Hyperfine interactions in cluster models of the Pb defect center”, M. Cook, C. T. WhiteHyperfine interactions in the Pb center (denoted schematically as Si3?Si?) at the Si(111)/SiO2 interface have been studied with use of spin-polarized self-consistent multiple-scattering X? calculations on Si22H21/Si6O18... (Read more)
- 506. Phys. Rev. B 38, 9657 (1988) , “Kinetics of H2 Passivation of Pb Centers at the (111) Si-SiO2 Interface”, K. L. Brower.This paper is concerned with the determination of the kinetic parameters and the chemical reactions that characterize the passivation of Pb centers with molecular hydrogen. Pb centers are paramagnetic defects at the (111) Si-SiO2 interface. In this study... (Read more)
- 507. Phys. Rev. B 38, 6308 (1988) , “EPR Observation of a Platinum Pair Complex in Si”, H. J. von Bardeleben, D. Stiévenard, M. Brousseau, J. Barrau.We report the observation of a (Pt-Pt) pair in Si. The defect is paramagnetic, with a g tensor of C2v symmetry and principal values of g[110]=2.1869, g[1¯10]=1.5181, and g[001]=1.6317. The central hyperfine spectra show interaction with two equivalent Pt ions. This defect gives rise to an... (Read more)
- 508. Phys. Rev. B 38, 3998 (1988) , “Microscopic Structure of the NL10 Heat-Treatment Center in Silicon: Study of Electron-Nuclear Double Resonance”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe defect center giving rise to the Si-NL10 EPR spectrum has been investigated by the electron-nuclear double-resonance (ENDOR) technique. Three separate experiments have been performed: oxygen ENDOR of 17O nuclei, aluminum ENDOR of 27Al, and field-stepped ENDOR. As a result a... (Read more)
- 509. Phys. Rev. B 38, 3395-3399 (1988) , “Electrical and Optical Properties of Defects in Silicon Introduced by High-Temperature Electron Irradiation”, Jian-Guo Xu, Fang Lu, and Heng-Hui Sun2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy Ec-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present... (Read more)
- 510. Phys. Rev. B 38, 1589 (1988) , “Motional Effects between On-Center and Off-Center Substitutional Nitrogen in Silicon”, Kouichi Murakami, Hitoshi Kuribayashi, and Kohzoh MasudaWe have found for the first time that the hyperfine splitting of the ESR of off-center substitutional nitrogen in silicon increases with increasing the temperature above ? 150 K. A model is proposed in which a hypothetical on-center substitutional N site exists in an adiabatic potential-energy... (Read more)
- 511. Phys. Rev. B 38, 13291 (1988) , “Sulfur Pair in Silicon: 33S Electron-Nuclear Double Resonance”, A. B. van Oosten, C. A. J. Ammerlaan.Sulfur pairs in silicon are studied by electron paramagnetic resonance (EPR) and by 33S electron-nuclear double resonance. The trigonal symmetry and electron spin S=(1/2 are experimentally established. For magnetic field B parallel to the [111] pair axis, the EPR intensity is strongly... (Read more)
- 512. Phys. Rev. B 37, 8949 (1988) , “Electron-Nuclear Double Resonance of Interstitial Positively Charged Iron in Silicon”, J. J. van Kooten, E. G. Sieverts, and C. A. J. AmmerlaanThe positively charged state of interstitial iron in silicon was studied by means of electron-nuclear double resonance. We have found hyperfine interactions of the impurity electrons with eight shells of silicon neighbors containing 98 atoms. Because the ground state of interstitial Fe+... (Read more)
- 513. Phys. Rev. B 37, 7268 (1988) , “Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR”, D. A. van Wezep, C. A. J. AmmerlaanThe electron-nuclear double-resonance spectra of interstitial 47Ti+ and 49Ti+ in silicon have been measured at 4.2 K. Spin Hamiltonians for these systems were determined and had to include hyperfine contributions of the type S3I and... (Read more)
- 514. Phys. Rev. B 37, 6887 (1988) , “State and motion of hydrogen in crystalline silicon”, Peter Deák, Lawrence C. Snyder, and James W. CorbettThe open-shell version of the modified intermediate neglect-of-differential-overlap molecular-orbital method has been used to obtain the equilibrium positions of H, H+, and H2 in a 32-atom cyclic silicon cluster. Two shells of silicon neighbors around the defect have been... (Read more)
- 515. Phys. Rev. B 37, 6353 (1988) , “Interaction of deuterium with defects in silicon studied by means of channeling ”, B. Bech NielsenThe lattice location of deuterium ion-implanted at low temperatures into silicon has been studied by means of the channeling technique. The channeling analysis is carried out at 30 K along the major axes and planes by means of the D(3He,p)4He nuclear reaction. Irradiation at 30... (Read more)
- 516. Phys. Rev. Lett. 61, 2786 (1988) , “Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon”, Michael Stavola, K. Bergman, S. J. Pearton, and J. LopataThe motion of hydrogen in the B-H complex in silicon has been studied. An applied stress is used to produce a preferential alignment of the B-H complex at temperatures sufficiently high for the H to move within the complex (above ∼60 K). This alignment of the complexes is detected by comparing the... (Read more)
- 517. Phys. Rev. Lett. 61, 227 (1988) , “Si-NL10: Paramagnetic Acceptor State of the Silicon Thermal Donor”, H. H. P. Th. Bekman, T. Gregorkiewicz, and C. A. J. AmmerlaanElectron paramagnetic resonance studies on several donor- and acceptor-doped, oxygen-rich, silicon samples have been performed. The intensity of the spectrum Si-NL10 has been investigated as a function of heat-treatment time, temperature, and illumination. The results provide evidence for an... (Read more)
- 518. Phys. Rev. Lett. 60, 460 (1988) , “Bistable Defect in Silicon: The Interstitial-Carbon-Substitutional-Carbon Pair”, L. W. Song, X. D. Zhan, B. W. Benson, G. D. Watkins.By combining several spectroscopic techniques, we have observed a new type of bistable center in electron-irradiated silicon and have identified it as an interstitial-carbon–substitutional-carbon pair. The positive and negative charge states of the defect share a common stable configuration which... (Read more)
- 519. Phys. Rev. Lett. 60, 321 (1988) , “Lattice Location of Deuterium Interacting with the Boron Acceptor in Silicon”, B. Bech Nielsen and J. U. AndersenThe lattice location of deuterium diffused into boron-doped silicon has been studied by means of channeling. After removal of a 0.2-μm-thick surface layer, it is found that 87% of the deuterium atoms occupy near-bond-center sites, whereas the remaining 13% are located close to tetrahedral sites. It... (Read more)
- 520. Phys. Rev. Lett. 60, 224 (1988) , “29Si Hyperfine Structure of Anomalous Muonium in Silicon: Proof of the Bond-Centered Model”, R. F. Kiefl* and M. Celio,T. L. Estle,S. R. Kreitzman, G. M. Luke, and T. M. Riseman,E. J. AnsaldoThe 29Si hyperfine structure of the anomalous muonium center in silicon has been resolved in muonspin-rotation spectra. The spectra of the weak 29Si satellite lines show that there are two equivalent Si neighbors on the symmetry axis with large positive p-like spin densities.... (Read more)
- 521. Phys. Rev. Lett. 60, 1422 (1988) , “Theory of hydrogen passivation of shallow-level dopants in crystalline silicon”, K. J. Chang and D. J. ChadiThe stable structures, vibrational modes, and passivation mechanisms of an interstitial hydrogen atom in boron- and phosphorus-doped crystalline silicon are determined by an ab initio pseudopotential method. Our calculated formation energies for passivated H-B and H-P complexes are 2.5 and 2.0 eV,... (Read more)
- 522. Phys. Stat. Sol. (b) 145, 609 (1988) , “Electron Paramagnetic Resonance of the Mn40 Cluster in Silicon”, J. Kreissl, W. Gehlhoff.In high-resistivity p-type and n-type silicon doped with manganese the Mn40 cluster is identified by EPR. The spectrum shows a characteristic hyperfine structure and an angular dependence of fine structure at 20 K. The analysis of the spectrum yield the assumption of the... (Read more)
- 523. Solid State Commun. 67, 573 (1988) , “ESR investigations of CrCu and CrAu pairs in silicon”, D. Rodewald, S. Severitt, H. Vollmer and R. LabuschA new ESR spectrum ist observed after co-diffusion of Cr and Cu in Si. Because of its axial [111]-symmetry and its spin S = 3/2 it is interpreted as a (Cr1 Cus)° pair. (Read more)
- 524. Solid State Commun. 65, 1039 (1988) , “Paramagnetic resonance of a Se-Al complex in silicon”, A. B. van Oosten and C. A. J. AmmerlaanIn selenium diffused, aluminum doped silicon a new electron paramagnetic resonance (EPR) spectrum, Si-NL31, was observed as a broad structure superposed on the selenium pair resonance. The EPR spectrum could not be analyzed directly, but an intense 27Al electron nuclear double resonance... (Read more)
- 525. Sov. Phys. JETP 67, 1697 (1988) , “Electric-Dipole Spin Resonance of Localized Electron States at Dislocation Dipoles in Undeformed Oxygen-Containing Silicon”, V. M. Babich, N. P. Baran, A. A. Bugai, A. A. Konchits, B. D. Shanina.An electric-dipole spin resonance (EDSR) of new local centers at dislocation dipoles, formed as a result of prolonged annealing of undeformed silicon, was observed for the first time and investigated. At low temperatures (1.7-40 K) such undeformed silicon samples exhibited considerable microwave conductivity, the behavior of which was correlated with that of EDSR of new (Si-2K and Si-3K) centers. The intensity and profile of the EDSR signals due to these centers depended on the intensity and orientation of the E1 component of the microwave field and the absorption lines were in the form of asymmetric dispersion curves. Both the resonant and the microwave conductivity disappeared (reversibly) as a result of interband illumination and irreversibly as a result of ultrasonic excitation of considerable amplitude, electron or gamma-ray bombardment, or annealing at T ≥ 1150 K. The Rashba and Sheka theory of the EDSR was modified for the case of local dislocation centers. A theory was developed of the profile of the EDSR lines, which accounts completely for the experimental results.
- 526. Sov. Phys. Semicond. 22, 666 (1988) , “Low-Symmetry Interstitial Defect in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.the ESR method was used in detection and investigation of a new paramagnetic center (designated H12 by the present authors) in silicon irradiated with large neutron doses. The concentration of the H12 centers was ~1016cm-3 when the radiation does was ~1019cm-2; it was independent of the nature of the dopant and the crystal growth method. The angular dependence of the ESR spectrum was described by a spin Hamiltonian with an electron spin s ï¼ 1/2 and a Ä tensor characterized by the C1 (or Ci) symmetry. The hyperfine structure of the H12 spectrum included three groups of lines which correspond to one, two, and two or three sites in the zeroth, first, and second "shells" of the defects, respectively. High-temperature (T ï¼ 100-200 ℃) uniaxial compression resulted in partial reorientation of the defect, which was characterized by an activation energy Ea ~1 eV and a frequency factor ν0~1013 s-1. The structure of the immediate environment of the defect, its symmetry, and the similarity of the hyperfine structure parameters and of the Ä tensor of the H12 and P6 spectra (the latter representing a complex of two interstitial atoms) were used, together with the nature and magnitude of teh response of the ESR spectrum to uniaxial compression, to propose a model of the H12 defect in the form of a complex of three interstitial atoms (I3+).
- 527. Appl. Phys. Lett. 51, 256 (1987) , “Interstitial defect reactions in silicon”, M. T. Asom, J. L. Benton, R. Sauer, and L. C. KimerlingDeep level transient spectroscopy has been employed in a study of impurity-interstitial defect reactions in silicon following room-temperature electron irradiation. Three defects have been isolated and identified from their reactions and electrical properties as... (Read more)
- 528. Appl. Phys. Lett. 51, 1155 (1987) , “Identification of a bistable defect in silicon: The carbon interstitial-carbon substitutional pair”, L. W. Song, B. W. Benson, and G. D. WatkinsBy using a combination of deep level transient spectroscopy (DLTS) and electron paramagnetic resonance techniques applied to samples of varying compositions, we identify the bistable defect at Ec 0.17 eV in irradiated n-type silicon as a carbon... (Read more)
- 529. Appl. Phys. Lett. 51, 1103 (1987) , “Identification of an Interstitial Carbon-Interstitial Oxygen Complex in Silicon”, J. M. Trombetta and G. D. WatkinsAn electron paramagnetic resonance spectrum, observed in electron irradiated silicon and labeled Si-G15, is shown to originate from the same carbon-oxygen complex as does the well studied C-line photoluminescence spectrum with zero-phonon line at 0.79 eV.... (Read more)
- 530. Appl. Phys. Lett. 50, 1733 (1987) , “Pentavacancies in Plastically Deformed Silicon”, M. Brohl, C. Kisielowski-Kemmerich, and H. AlexanderHigh-pressure/low-temperature plastic deformation of silicon leads to the appearance of new electron spin resonance active centers. One of them could be identified to be the pentavacancy Si-P1, which also can be produced by irradiation. Depending on the deformation axis the defect occurs in... (Read more)
- 531. Appl. Phys. Lett. 50, 1450 (1987) , “Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films”, W. E. CarlosElectron spin resonance measurements of silicon-on-insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer.... (Read more)
- 532. J. Appl. Phys. 62, 4404 (1987) , “Electron-Paramagnetic-Resonance Study of Heat-Treatment Centers in n-Type Silicon”, H. H. P. Th. Bekman, T. Gregorkiewicz, D. A. van Wezep, and C. A. J. AmmerlaanDonor formation in heat-treated phosphorus-doped Czochralski-grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both ``thermal-donor-'' and ``new-donor''-formation temperature regions (470 and 650 °C, respectively) have been investigated. The results... (Read more)
- 533. J. Phys. C: Solid State Phys. 20, 841 (1987) , “Self-ENDOR of Vanadium in Silicon”, J. J. van Kooten, D. van Kootwijk, C. A. J. Ammerlaan.Self-ENDOR measurements for the 51V isotope of double-positive vanadium in silicon are presented. The spin-Hamiltonian parameters have been determined. For an adequate description of the spectrum it was necessary to include a higher-order hyperfine term of the type S3I in the... (Read more)
- 534. Microscopy of semiconducting materials 463 (1987) , The Institute of Pysics,London,Noble M. Johnson, Stephen G. Bishop, George D. Watkins , “Metal impurities at the SIO2-Si interface”, K Honda,T Nakanishi,A Ohsawa,N Toyokura
- 535. Microscopy of semiconducting materials 39 (1987) , The Institute of Physics,London,A.G. Cullis and P.D. Augustus , “Defects induced by oxygen precipitation in silicon : a new hypothesis involving hexagonal silicon”, A bourret
- 536. Phys. Lett. A 125, 354 (1987) , “EPR Evidence of Helium-Oxygen-Vacancy Complexes in Crystalline Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevTwo new (S = 1) EPR spectra, labeled Si-AA7 and Si-AA8, arise from a helium-associated defect in crystalline silicon. Both are produced only in Czochralski-grown silicon by helium ion implantation at ≈ 20°C followed by annealing at ≈ 180°C and are stable to ≈... (Read more)Si| EPR| AA10 AA7 AA8 Helium vacancy .inp files: Si/V-He-O2 Si/AA10 Si/V-He-O1 | last update: Takeo Kitamura
- 537. Phys. Rev. B 36, 9638-9648 (1987) , “Theory of the Pb center at the <111> Si/SiO2 interface”, A. H. EdwardsWe present a series of semiempirical calculations on threefold-coordinated silicon at the ?111? Si/SiO2 interface. These were performed on finite clusters of atoms with use of hydrogen terminators in an unrestricted Hartree-Fock formalism wherein we include lattice relaxations. We have... (Read more)
- 538. Phys. Rev. B 36, 6202 (1987) , “Photoelectron Paramagnetic Resonance of Pt- in Silicon”, P. Omling, P. Emanuelsson, H. G. Grimmeiss.The Pt- center in silicon has been identified by its characteristic electron-paramagnetic-resonance (EPR) signal. From photo-EPR measurements, the optical cross sections of holes for the Pt(0/-) transition have been determined at T=4.2 K. A comparison with corresponding optical cross... (Read more)
- 539. Phys. Rev. B 36, 3528 (1987) , “Electron-Nuclear Double Resonance of Interstitial Chromium in Silicon”, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanThe positively charged state of interstitial chromium in silicon was investigated using electron-nuclear double resonance. We have found the hyperfine interaction of the impurity electrons with nine shells of surrounding silicon neighbors containing 102 atoms. The well-resolved fine structure due to... (Read more)
- 540. Phys. Rev. B 35, 3810 (1987) , “EPR Studies of Heat-Treatment Centers in p-Type Silicon”, T. Gregorkiewicz, D. A. van Wezep, H. H. P. Th. Bekman, C. A. J. Ammerlaan.The influence of acceptor doping (B,Al,Ga,In) on heat-treatment (HT) centers in oxygen-rich silicon was studied by means of EPR and resistivity measurements. EPR studies revealed that spectra Si-NL8 and Si-NL10 were practically the only ones which could be related to HT centers. They could be... (Read more)
- 541. Phys. Rev. B 35, 1582 (1987) , “Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon”, M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanIn electron-irradiated boron-doped silicon the electron paramagnetic resonance spectrum Si-G10 has been studied. Earlier this spectrum had tentatively been identified with a boron-vacancy complex in a next-nearest-neighbor configuration. With electron-nuclear double resonance the hyperfine and... (Read more)
- 542. Phys. Rev. B 35, 1566 (1987) , “Vacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements”, M. Sprenger, S. H. Muller, E. G. Sieverts, and C. A. J. AmmerlaanThe isolated vacancy in silicon has been studied with magnetic resonance spectroscopy. The EPR spectrum labeled Si-G2, identified as arising from the negative charge state of the vacancy, has been investigated by electron-nuclear double resonance. Hyperfine interactions between the unpaired defect... (Read more)
- 543. Phys. Rev. Lett. 59, 1702 (1987) , “Oxygen Incorporation in Thermal-Donor Centers in Silicon”, T. Gregorkiewicz, D. A. van Wezep, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe paper presents for the first time microscopic evidence for the presence of oxygen in thermal donor centers in silicon. The evidence as obtained by electron nuclear double resonance on the magnetic isotope 17O is conclusive. (Read more)
- 544. Solid State Commun. 64, 1489 (1987) , “Electron Paramagnetic Resonance of an Fe-Fe Pair in Silicon”, J. J. van Kooten, E. G. Sieverts and C. A. J. AmmerlaanThe electron paramagnetic resonance spectrum Si-NL24, which is associated with an iron-iron impurity pair and was earlier observed in electron-irradiated silicon, was produced as a quenched-in defect spectrum. Contrary to previous work we could resolve the complete angular dependence of the spectrum... (Read more)
- 545. Solid State Commun. 61, 199-202 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun, Qin Guo-gang
- 546. Sov. Phys. JETP 66, 838 (1987) , “Combined Electron Resonance in a One-Dimensional Dislocation Band”, V. V. Kveder, T. R. Mchedlidze, Yu. A. Osipyan, A. I. Shalynin.The intensity and width of the combined electron resonance line for dislocations in silicon are investigated as functions of temperature, microwave electric field, and illumination. the resonance intensity grows as T-2.4 with decreasing temperature; this indicates that the electron mobility increases, and hence that band conduction rather than hoppimg along dislocations is the primary conduction mechanism. The energy of the dislocation band is found, and the saturation and width of the line are discussed
- 547. Sov. Phys. Semicond. 21, 29 (1987) , “Vacancy-Impurity Defect with Spatially Separated Components in Electron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich, B. P. Kashnikov.The ESR metod was used to study heavily doped n-type silicon (dopant concentrarions up to 2×1018 cm-3) irradiated with large doses of 1 MeV electrons. The G16 spectrum dominated the results obtained. A superhyperfine structure (SHFS) was observed in the spectrum: it corresponded to the hyperfine interaction of a paramagnetic electron with nuclei of the 29Si silicon isotope which were located in four shells. A numerical analysis of the spectra yielded the SHFS line intensities and the numbers of equivalent sites in the shells: three sites in the first shell, one in the second, two in the third, and five or six in the fourth. A study of the G16 spectrum under unaxial compression conditions at temperatures 150-500 K revealed two activation energies (EA1 ≈ 0.25, EA2 ≈ 1.4 eV ) representing the process of reorientation of the investigated defect. The results obtained were used to propose a model of the G16 center. This was a vacancy-impurity complex in which the vacancy was localized in the second coordination sphere relative to the impurity atom. The mechanism resulting in a spatial separation of the components in this defect was considered. It was assumed that the impurity atom occuring in the G16 center was carbon.
- 548. Appl. Phys. Lett. 49, 348-350 (1986) , “Interface traps and Pb centers in oxidized (100) silicon wafers”, G. J. Gerardi, E. H. Poindexter, P. J. Caplan, N. M. JohnsonThe band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0,... (Read more)
- 549. Appl. Phys. Lett. 48, 972-974 (1986) , “Electron spin resonance of [1-11], [-111], and [11-1] oriented dangling orbital Pb0 defects at the (111) Si/SiO2 interface”, A. StesmansThe observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0SiSi3) with dangling bonds positioned along [11], [11], and [11] from low-temperature (T30 K) electron spin resonance measurements is reported. This is connected with... (Read more)
- 550. Appl. Phys. Lett. 48, 1270 (1986) , “Capture and emission kinetics of individual Si:SiO2 interface states ”, M. J. Kirton and M. J. UrenBy studying the random telegraph signals in the drain current of small area metal-oxide-semiconductor field-effect transistors as a function of temperature, we show that carrier capture into individual interface states takes place via a multiphonon process. We demonstrate that the interface trap... (Read more)
- 551. Appl. Phys. Lett. 48, 1000 (1986) , “Configurationally multistable defect in silicon”, A. Chantre and L. C. KimerlingWe report the isolation of a new defect in n-type silicon following room-temperature electron irradiation. Using deep level transient spectroscopy (DLTS) combined with minority-carrier injection at 250 K, we show that the DLTS peak usually ascribed to the phosphorus-vacancy pair hides a... (Read more)
- 552. J. Appl. Phys. 59, 3255-3266 (1986) , “Thermodynamic and Kinetic Considerations on the Equilibrium Shape for Thermally Induced Microdefects in Czochralski Silicon”, W. A. Tiller, S. Hahn, F. A. Ponce.Using thermodynamic and kinetic considerations, we explain the quasiequilibrium, morphological, and structural characteristics of thermally induced oxide precipitates in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon/silica interface is used to explain the... (Read more)
- 553. J. Phys. C: Solid State Phys. 19, 841 (1986) , “Carbon-related radiation damage centres in Czochralski silicon”, G Davies, A S Oates, R C Newman, R Woolley, E C Lightowlers, M J Binns and J G WilkesWe show that the intensity of the 790 meV electronic absorption line and the C(3) vibrational line at 865 cm-1 correlate in Czochralski (CZ) silicon regardless of carbon concentrations, radiation doses and stages of annealing. Three weak vibrational lines at 529, 550 and 742... (Read more)
- 554. J. Phys. C: Solid State Phys. 19, 6417 (1986) , “EPR of defects in silicon-on-insulator structures formed by ion implantation. I. O+ implantation”, R. C. Barklie, A. Hobbs, P. L. F. Hemment, K. Reeson.EPR measurements at X band and room temperature have been made of defects produced by implanting (100) and (111) silicon wafers with doses >1018 O- cm-2 using 300 keV O- and 400 keV O2+ ions and an implantation temperature of... (Read more)
- 555. J. Phys. C: Solid State Phys. 18, L795 (1986) , “0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time”, K Thonke, A Hangleiter, J Wagner and R SauerHighly excited states of the 0.79 eV luminescent defect observed in photoluminescence excitation (PLE) measurements are interpreted as effective-mass (EMT) states of a pseudo-donor with Ei=38.3 meV. The interpretation implies that the 1s ground state of the donor electron is fivefold... (Read more)
- 556. JETP Lett. 43, 255 (1986) , “Combined Resonance at Dislocations in Silicon”, V. V. Kveder, V. Ya. Kravchenko, T. R. Mchedlidze, Yu. A. Osipyan, D. E. Khmelnitski?, A. I. Shalynin.A combined resonance corresponding to transitions between Zeeman levels of electrons trapped in a one-dimensional dislocation band has been observed in plastically deformed silicon. The electrons are trapped by virtue of their motion along a dislocation under the influence of an rf electric field. (Read more)
- 557. Phys. Lett. A 118, 347 (1986) , “An EPR study of a new C2 symmetry defect in neutron-irradiated silicon”, E. Wu, J. C. Mao, S. X. Wu, M. X. Yan, G. G. Qin.A new defect, labeled Si-PK4, has been observed with EPR in neutron-irradiated FZ-silicon grown in argon. Its g tensor reveals that Si-PK4 has monoclinic-II symmetry (C2 point group) with one symmetry axis pointing to 100. According to the empirical classification of g... (Read more)
- 558. Phys. Rev. B 34, 4511 (1986) , “Spin Delocalization of Interstitial Iron in Silicon”, D. A. van Wezep, T. Gregorkiewicz, E. G. Sieverts, and C. A. J. AmmerlaanThe apparent contradiction between a covalently delocalized picture of the Si:Fei0 system, suggested among others by the large reduction of the central nucleus hyperfine interaction parameter as compared to the free ion, and the localized picture as has emerged from the... (Read more)
- 559. Phys. Rev. B 34, 3610-3619 (1986) , “Dipolar interactions between dangling bonds at the (111) Si-SiO2 interface”, K. L. Brower, T. J. HeadleyIn this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
- 560. Phys. Rev. B 34, 3610 (1986) , “Dipolar Interactions between Dangling Bonds at the (111) Si-SiO2 Interface”, K. L. Brower, T. J. Headley.In this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
- 561. Phys. Rev. B 34, 1381 (1986) , “Paramagnetic Resonance of a New-Oxygen-Donor Related Center in Silicon”, R. Wörner and O. F. SchirmerIn Czochralski-grown silicon annealed in the temperature range between 650 and 800 °C, an anisotropic electron-spin resonance (ESR) spectrum was observed. Analysis of the angular dependence reveals monoclinic (Cs) symmetry of the representative g tensor, with one of the principal axes... (Read more)
- 562. Phys. Rev. B 33, 4471 (1986) , “Strain broadening of the dangling-bond resonance at the (111) Si-SiO2 interface”, K. L. BrowerIt is observed that the linewidth and line shape of the Zeeman resonance associated with dangling bonds at the (111)Si-SiO2 interface (Pb centers) vary with the direction of the applied magnetic field. An analysis of the line shape of this resonance indicates that it can be... (Read more)
- 563. Phys. Rev. Lett. 57, 611 (1986) , “Thermal Donors in Silicon: A Study with ENDOR”, J. Michel, J. R. Niklas, and J. -M. SpaethENDOR experiments on paramagnetic thermal donors are presented for the first time. They show that the ESR spectra of all thermal donors identified by ir bands are superimposed in one narrow line ("NL8"). Only 29Si superhyperfine interactions were found and determined for up to seven... (Read more)
- 564. phys. stat. sol. (b) 138, 337 (1986) , “A Silicon-Gold Pair in Silicon Investigated by EPR”, M. Höhne.A new gold-related defect in silicon is observed after IR irradiation. Though a thermal treatment including additional doping with lithium is necessary for the production of this centre, the lithium obviously does not participate in the paramagnetic state. The paramagnetic state is mainly localized... (Read more)
- 565. Solid State Commun. 58, 811 (1986) , “ESR Investigation of MnCu Pairs in Silicon”, H. Dietrich, H. Vollmer and R. LabuschThe new ESR spectra are observed after co-diffusion of Mn and Cu in Si. The experimentally observed spins are interpreted as (MnCu)+ and (MnCu)−-pairs with axial (1 1 1)-symmetry. To our knowledge these are the first ESR-identified, Cu-related centres in silicon. (Read more)
- 566. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 567. Sov. Phys. Solid State 28, 1862 (1986) , “Electron states having spin S ≥ 1 at dislocations in silicon”, M. N. Zolotukhin
- 568. Sov. Phys. JETP 64, 612 (1986) , “Spin-Dependent Effects Due to Triplet Centers in Irradiated Silicon”, L. S. Vlasenko, M. P. Vlasenko, V. N. Lomasov, V. A. Khramtsov.A study has been made of the optical polarization of nuclei and spin-dependent photoconductivity in silicon crystals containing structural defects which are in excited triplet states when illuminated, with a nonequilibrium distribution of the populations of magnetic sublevels. Mixing of triplet states differing iin spin projection is necessary for the onset of an optical polarization of nuclei as the nuclei participate in a hyperfine interaction with the triplet centers. A correlation is found between the angular distribution and the temperature dependence of the intensities of the ESR lines of triplet centers and of the degree of optical polarization of the nuclei. It is shown that the saturation of the ESR transition of the triplet centers leads to a change in the photoconductivity of silicon crystals. A similar change in photoconductivity is obsserved at anticrossing of the magnetic sublevels of triplet centers.
- 569. Sov. Phys. Semicond. 20, 688 (1986) , “Spin-Dependent Recombination and Low-Frequency ESR Spectroscopy of Impurities and Defects in Silicon”, L. S. Vlasenko, V. A. Khramtsov.the change in the photoconductivity of silicon crystals due to saturation of ESR transition in paramagnetic recombination centers was used to record the ESR spectra of radiation defects in weakly irradiated silicon crystals. The ESR spectra of samples with defect concentration below 1012 cm-3 were recorded on the basis of a change in the Q factor of the spectrometer resonator because of a change in the photocarrier density at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photocarrierdensity at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photoconductivity of the samples were detected in the absence of a resonance alternating field at values of a static magnetic field corresponding to the points of intersection of magnetic sublevels of the paramagnetic centers with spin S > 1/2. The proposed experimental method was used to record a number of new ESR spectra of irradiated silicon crystals.
- 570. Sov. Phys. Solid State 28, 1862 (1986) , “Electron States Having Spin S ≥ 1 at Dislocations in Silicon”, M. N. Zolotukhin.The kinetics of restoration of the ESR spectrum fine structure lines in silicon crystals containing dislocations is the same for bound spins at dislocations as for the ESR dark spectrum of broken (dangling) bonds at dislocations after illumination of the crystal has ended. It is of the barrier type and is controlled by hole capture at the broken-bond level. The fine structure of the dislocation ESR spectrum is determined by the defect structure of the dislocations, which depends considerably on the way in which they were formed in the crystals.
- 571. Appl. Phys. Lett. 46, 882 (1985) , “Atomic deuterium passivation of boron acceptor levels in silicon crystals”, J. C. Mikkelsen, Jr.B-doped Si wafers were subjected to atomic-deuterium (D) plasmas to simulate the reactions of atomic hydrogen with substitutional B acceptor levels. Secondary ion mass spectrometry was used to profile the in- and out-diffusion of D, and spreading resistance was used to measure the distribution of... (Read more)
- 572. Appl. Phys. Lett. 46, 787 (1985) , “Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon”, N. M. Johnson and M. D. MoyerIt was recently proposed that hydrogen compensation of shallow-acceptor impurities in single-crystal silicon is due to the diffusion of both monatomic oxygen and hydrogen into silicon which combine at acceptor sites to form neutral acceptor-OH complexes. It is shown here that oxygen does not diffuse... (Read more)
- 573. Defects and defect processes in nonmetallic solids 1-464 (1985) , John.Wiley and sons , W. Hayes, A.M. Stoneham. WileyCHAPTER1. Electronic Properties CHAPTER2. Interatomic Forces and Atomic Motions CHAPTER3. Lattice Defects CHAPTER4. Spectroscopy of Solids CHAPTER5. Electronic Properties of Point Defects CHAPTER6. Radiation-Induced defect processes CHAPTER7. Properties of Surfaces CHAPTER8. Special Systems APPENDIX: Notation for Defects PHYSICAL CONSTANTS; Units and Conversion Factors SUPPLEMENTARY READING REFERENCES INDEX
- 574. J. Appl. Phys. 57, 1783 (1985) , “Annealing kinetics of the gold-iron complex in silicon”, S. D. Brotherton, P. Bradley, and A. GillGold and iron are known to interact in silicon at temperatures below ~400 °C to form gold-iron pairs with band-gap energy levels of Ev +0.434 eV and Ec 0.354 eV. In this work, the details of the formation and dissociation of these pairs... (Read more)
- 575. J. Electrochem. Soc. 132, 3034 (1985) , “Quantitative Spectroscopy of Interstitial Oxygen in Silicon”, B. Pajot and H. J. Stein and B. Cales and C. NaudQuantitative data are presented on the infrared (IR) absorption of interstitial oxygen in oxygen-rich silicon using Fourier transform spectroscopy. Besides the wel-known and 1106 cm-1 room temperature IR bands, due to the symmetric and antisymmetric vibrations of the Si2O entity, respectively, three other bands at 1227, 1720, and 1013 cm-1 are reported, whose intensities are scaled with those of the 515 and 1106 cm-1 bands. The band at 1227 cm-1 has often been confused with an oxygen precipitate band observed at 1225 cm-1 in annealed silicon. Evidence is given that the 1227 cm-1 band is related to interstitial oxygen. It is also shown that another band at 1720 cm-1 is a combination of the antisymmetric mode of Si2O with a phonon combination of the silicon lattice. A weak band at 1013 cm-1 is reported for the first time, and it is attributed to an overtone of the 515 cm-1 mode. (Read more)
- 576. J. Electrochem. Soc. 132, 1707 (1985) , “Determination of Conversion Factor for Infrared Measurement of Oxygen in Silicon”, T. Iizuka, S. Takasu, M. Tajima, T. Arai, T. Nozaki, N. Inoue, and M. WatanabeA reliable conversion factor for the infrared absorptiometry of oxygen in silicon has been determined by round-robininfrared measurement followed by charged particle activation analysis with the 16O(3He,p)18F reaction. As for theround-robin samples, 70 dislocation-free CZ silicon wafers with oxygen contents ranging from 3 to 20 × 1017 at.-cm-3 andthicknesses of 2, 1, and 0.5 mm were carefully prepared by five organizations. A good linear relationship has been obtainedbetween the absorption coefficient and the oxygen content. The relationship is expressed as [oxygen concentration (at.-cm-3)] = (3.03 ± 0.02) × 1017 × [absorption coefficient (cm-1)]. (Read more)
- 577. J. Phys. C: Solid State Phys. 18, L967 (1985) , “Thermal donors in silicon: oxygen clusters or self-interstitial aggregates”, R C NewmanThere is a long-standing view that small aggregates of oxygen impurities in silicon produced by heat treatments at 450 degrees C are the defects that act as thermal donors. Recently it has been established that these treatments also lead to the generation of self-interstitials. It is now suggested... (Read more)
- 578. JETP Lett. 42, 38 (1985) , “Nonresonant Spin-Dependent Conductivity in Silicon”, L. S. Vlasenko, V. A. Khramtsov.A nonresonant change has been discovered in the photoconductivity of irradiated silicon crystals in a weak magnetic field. This new effect is shown to result from a spin-dependent recombination of photoexcited carriers through triplet centers. A change in the photoconductivity in the absence of a resonant alternating magnetic field arises at anticrossing points of magnetic sublevels of triplet centers. (Read more)
- 579. Jpn. J. Appl. Phys. 24, 279 (1985) , “Solubility and Diffusion Coefficient of Oxygen in Silicon ”, Yoshiko Itoh and Tadashi NozakiThe solubility and diffusion coefficient of oxygen in silicon between 1000°C and 1375°C were examined by charged particle activation analysis with the 16O(3He, p)18F reaction, in which oxygen was activated with an equal probability over the depth of up to 250... (Read more)
- 580. Mater. Res. Soc. Symp. Proc. 46, 525 (1985) , “Electronic Ground State of Iron-Acceptor Pairs in Silicon”, C. A. J. Ammerlaan, J. J. van Kooten.Iron-acceptor impurity pairs, consisting of a positively charged iron ion trapped on an interstitial site in the vicinity of an ionized acceptor, in silicon were observed by electron paramagneric resonance for all common acceptor dopants (B, Al, Ga, In). The Zeeman splittings of these pairs, to which both spin and orbital momenta contribute, cover the range between 1.1 and 6.4. An interpretation of these spectroscopic spliting factors is presented, shich considers the effects of the crystal field - of cubic, axial, or lower symmetry - and of spin-orbit interaction on the 4F ground state of the iron ion in a (3d)7 configuration. It is not due to a dynamical Jahn-Teller effect. nor due to hybridization. Rather, it is proposed that a significant reduction, by about 80%, of the orbital magnetism arises from covalency.
- 581. Mater. Res. Soc. Symp. Proc. 46, 39 (1985) , “Electronic Defect Characterization”, H. G. Grimmeiss.Knowledge concerning the electronic properties of defects is crucial for the understanding of the behaviour of these defects in semiconductors. Considering the important role defects play in most currently used devices it is not surprising that a great number of different measurement techniques have been developed with the aim of not only quantitatively determining the electronic parameters but also of identifying the defect chemically and evaluating the local environment of such defects. In most cases this goal can not be achieved by applying only a single (defect property) measureing technique. In this paper an attempt is made, using two different examples. to show what achivements in defect characterization and identification can be obtained by combining two or more different measurement techniques. The first example is a single substitutional impurity, sulfur in silicon, while the second example deals with a more complex defect, the oxygen-vacancy center in silicon. In both cases a number of techniques such as different junction space charge measurements, Hall effect, absorption, ESR, photo-ESR, ENDOR photoconductivity, irradiaton and annealing processes, and even theory were used to study the defect. The advantages and limitations of various methodologies will be discussed.
- 582. Mater. Res. Soc. Symp. Proc. 46, 263 (1985) , “Identity of the NL8 EPR Spectrum with Thermal Donors in Silicon”, K. M. Lee, J. M. Trombetta, G. D. Watkins.The effect of uniaxial stress on the NL8 EPR spectrum in 450℃ heat-treated silicon containing thermal donors (TD's) is described. Changes in the relative amplitudes of the NL8 spectral components are interpreted as arising from electronic redistribution between the differently oriented defects. These changes are consistant in sign and magnitude with those predicted for TD+ from observed stress effects on the TD IR and DLTS spectra.
- 583. Mater. Res. Soc. Symp. Proc. 46, 237 (1985) , “ENDOR-Investigation of Al++ and Al++-Al- Pairs in Silicon”, J. R. Niklas, J. M. Spaeth, G. D. Watkins.With Electron Nuclear Double Resonance (ENDOR) ligand superhyperfine (shf) interactions were investigated for 7 neighbor shells of the interstitial Al++ center (Si-G18) and for 10 neighbor shells of the Al++-Al- pair center (Si-G19). All shells of the interstitial center exhibit undistorted Td symmetry confirming the defect model derived from earlier experiments. In the pair center the shf interaction of the Al++ with the neighboring Al nucleus shows a pure [111]-symmetry, also the shf interactions with the outer Si-neighbor shells exactly reflect this axial [111]-symmetry of the defect. The magnitude of the quadrupole interaction of the neighboring Al nucleus clearly shows, that this nucleus is a nearest neighbor of the Al++. From the angular dependence and the intensity ratios of ENDOR lines of the pair center it can be excluded that any additional impurity is associated with the Al++-Al- pair at least within the first 3 neighbor shells of the Al++. The influence of the Al- neighbor on the hyperfine axes of the first [111] Si-neighbors is negligible and is also remarkably small for the other Si-neighbors. The magnitudes of the ligand shf interactions gor the pair center are closely related to those of the Al++ center. A comparison of these values for both centers allows a definite assignment of the measured shf interactions to their corresponding neighbor shells for the Al++ center.
- 584. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 585. Microscopic identification of electronic defects in semiconductors 453 (1985) , Materials Research Socirty Symposia Proceedings,Noble M. Johnson, Stephen G. Bishop, George D. Watkins , “Excitation spectroscopy on silicon using color center lasers : study of the thermally induced p line (0.767eV) defect”, J Wagner,A Dornen,R Sauer
- 586. Phys. Lett. A 110, 157 (1985) , “EPR of Neutral Vacancy-Helium Centers in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevIn this letter we report the first observation by EPR of helium-associated defects in solid. Two new (S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and... (Read more)
- 587. Phys. Rev. B 32, 7129 (1985) , “Electron-Nuclear Double Resonance of Titanium in Silicon: 29Si ENDOR”, D. A. van Wezep, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The Si-NL29 EPR spectrum, which is associated with the positive charge state of interstitial titanium in silicon, was investigated by electron-nuclear double resonance. Hyperfine-interaction parameters of 17 shells of silicon neighbors, comprised of 214 atoms, could be determined. These parameters... (Read more)
- 588. Phys. Rev. B 32, 6571 (1985) , “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon”, P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel.Energy levels of defect states introduced by plastic deformation of n-type silicon have been studied by capacitance transient spectroscopy. From the observed properties of the defects, it is concluded that two different types of defects are produced. The first type is interpreted as point defects... (Read more)
- 589. Phys. Rev. B 32, 530 (1985) , “Muonium centers in GaAs and GaP ”, R. F. Kiefl, J. W. Schneider, H. Keller, W. Kündig, W. Odermatt, and B. D. Patterson, and K. W. Blazey and T. L. Estle and S. L. RudazThe authors present the first observation of muon spin rotation for normal (Mu) and anomalous (Mu*) muonium centers in compound semiconductors, specifically GaP and GaAs. As in the elemental semiconductors, the muonium defect centers are characterized by a large isotropic hyperfine... (Read more)
- 590. Phys. Rev. B 31, 5561 (1985) , “Donorlike excited states of the thermally induced 0.767-eV (P line) defect in oxygen-rich silicon ”, J. Wagner and A. Dörnen and R. SauerPhotoluminescence-excitation spectroscopy with a KCl: Tl color-center laser is performed on the thermally induced defect in oxygen-rich silicon which emits the 0.767-eV (P) no-phonon line. We find two sets of excited states. One set 20-30 meV above the P transition is identified with... (Read more)
- 591. Phys. Rev. B 31, 5525-5528 (1985) , “Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon”, N. M. JohnsonExperimental results are presented which identify the following chemical reaction as being responsible for compensation of shallow-acceptor impurities when single-crystal silicon is exposed to monatomic hydrogen: A-+h++H0↔(AH)0, where A-... (Read more)
- 592. phys. stat. sol. (a) 92, K53 (1985) , “Low Symmetry Centre in Silicon”, A. V. Dvurechenskii, V. V. Suprunchik.Investigation of the defect formation in heavily doped silicon irradiated by high dose of electrons have led to the discovery of new types of defects /1, 2/. The present note is the next one of this series. A new centre is investigated in p-type silicon irradiated by neutrons. (Read more)Si| EPR neutron-irradiation| A5 C1 H8 P3 P6 Sii Vsi interstitial p-type triclinic vacancy .inp files: Si/H8/H8.inp | last update: Takahide Umeda
- 593. phys. stat. sol. (b) 130, K51 (1985) , “New EPR Spectrum in Helium-Implanted Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi, A. A. Kim.Recently /1 to 4/ a unique class of electron-vibronic photoluminescence spectra in silicon has been found. These spectra have been observed exclusively after noble gas (in particular, helium) ion implantation and partial annealing, above 200 ℃. Tkachev et al. /1, 3/ have suggested that noble gas... (Read more)
- 594. Solid State Commun. 53, 1135 (1985) , “Electron Paramagnetic Resonance on Shallow Acceptor Impurities in Silicon”, R. van Kemp, C. A. J. Ammerlaan.The shallow acceptor impurities boron, aluminum, gallium and indium in silicon were investigated by electron paramagnetic resonance (EPR) using a K-band superheterodyne spectrometer. The EPR spectra of these impurities were observed at low temperatures (1.4K < T < 4.2K) under conditions of zero and small values of external uniaxial stress. the observed angular dependence of the resonance lines can be analyzed using the effective spin Hamiltonian H = HB + Hε with J = 3/2 [1], HB = ?, Hε = ?. By making a least squares fit to the experimental data, the g-values g1' and g2' and the deformation potential parameters b' and d' were obtained. Under a variety of conditions peculiar line shapes and width were observed. We considered teh following mechanism to explain the observed characteristics of the resonance lines: double and triple quantum transitions, linear and quadratic effects of strain, dynamic Jahn-Teller distortion, transition probabilities and the effect of relaxation time on spin dynamics. Double and triple quantum transitions can occur in this system because j = 3/2. They can be recognized because their intensity is proportional to the square and the cube, respectively, of the microwave power. However, in the experiment no such dependence on the microwave power was found. The expressions thus obtained can account qualitatively for the line width and asymmetry when it is assumed that the strain distribution in the crystal is approximately Gaussian. These effects can not account for a peculiar narrow dip that is present in the centers of the resonance lines with ΔMj = 1 and ΔMj = 2 [2]. A dynamic Jahn-Teller distortion of the acceptor atoms would have result that there are no sites with strain zero. Together with the random strains present in the crystal, the effect will be a shift of intensity away from the magnetic field at which the center of the line occurs. Calculation of the transition probabilities for the ΔMj = 1, 2, 3 transitions showed that these do not become very small in any of the cases. An explanation of the dip in the center of the resonance line can be offered in the following way [3]. The broad resonance lines for the ΔMj = 1 and ΔMj = 2 transitions are a superposition of spin packets which are shifted due to the random internal strains. For small values of the strains, packets will overlap, allowing a form of cross-relaxation to occur. this results in broadening of the homofeneous width and smaller intensity at the centerof the resonance line. (Read more)
- 595. Sov. Phys. Semicond. 19, 1198 (1985) , “Nonorientable Divacancies in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.The electron spin resonance method was used in na investigation of heavily doped n-type silicon [phosphorus concentration NP = (2-10)×1018 cm-3] irradiated with reactor neutrons in doses 5×1017-4×1019 cm-2. In addition to the spectra of the familiar G7 (divacancy) and P3 (tetravacancy) centers, the investigated samples exhibited two new spectra denoted by H9 and H10. The parameters of the spin Hamiltonian of these spectra were determined. According to the results obtained, the H9 spectrum was due to nonorientable divacancies located in zones of strong lattice deformation zones was ε ≥ 10-3. It was postulated that H10 is a vacancy-type defect with a paramagnetic electron localized on a broken bond of a silicon atom. Some of the characteristics of the P3 and P6 spectra observed for heavily doped n-type silicon indicated that the manifestation of these centers depends on the Fermi level position.
- 596. Sov. Phys. Solid State 27, 1093 (1985) , “Electron Spin Resonance of Strain Probes in Gadolinium-Doped Silicon”, A. A. Buga?, V. E. Kustov, Yu. G. Semenov, V. I. Shakhovtsov, V. L. Shindich.The angular dependences of the ESR line width were studied for interstitial Fe0 and Mn0 in gadolinium-doped silicon. It was found that the addition of gadolinium causes considerable internal elastic deformations of the crystal. A theoretical calculation is given whereby the mean deformation charge density can be determined from the measured ESR line widths of strain--sensitive centers.
- 597. Appl. Phys. Lett. 44, 96-98 (1984) , “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, P. M. Lenahan and P. V. DressendorferWe find that two paramagnetic ``trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures. Applied Physics Letters is copyrighted by The American Institute of Physics. ... (Read more)
- 598. Appl. Phys. Lett. 44, 514 (1984) , “Infrared spectrum of interstitial oxygen in silicon”, Michael StavolaA stress-induced dichroism study of the 1106-cm1 and 515-cm1 modes of interstitial oxygen in silicon has been undertaken in order to assign the 515-cm1 mode. It has been found that the 515-cm1 mode is due to the symmetric stretching... (Read more)
- 599. Appl. Phys. Lett. 44, 228-230 (1984) , “Optically induced electron spin resonance and spin-dependent recombination in Si/SiO2”, B. HendersonIn state-of-the-art Si/SiO2 wafers the concentration of paramagnetic interface states (1010 cm2) is almost too low to be detected by electron spin resonance (ESR). This letter describes experiments which show that the ESR signal of singly occupied dangling bond... (Read more)
- 600. J. Appl. Phys. 56, 2844-2849 (1984) , “Electronic traps and Pb centers at the Si/SiO2 interface: Band-gap energy distribution”, E. H. Poindexter, G. J. Gerardi, M. -E. Rueckel, P. J. Caplan, N. M. Johnson, D. K. BiegelsenEnergy distribution of Pb centers (·SiSi3) and electronic traps (Dit) at the Si/SiO2 interface in metal-oxide-silicon (MOS) structures was examined by electric-field-controlled electron paramagnetic resonance (EPR)... (Read more)
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