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- 201. Solid-State Electronics 19, 611 (1976) , “Thermal Emission Rates and Activation Energies of Electrons at Tantalum Centers in Silicon”, Kenji Miyata and C. T. SahThe thermal emission rates and activation energies of electrons trapped at the two Ta donor centers in n-type silicon are determined from transient capacitance measurements on Schottky barrier diodes made on phosphorus and tantalum doubly doped silicon crystals. The thermal activation energies are... (Read more)
- 202. Radiat. Eff. 29, 7 (1976) , “Photo-EPR Experiments on Defects in Irradiated Silicon”, Y. H. Lee, T. D. Bilash, J. W. Corbett.The defect electrical levels for eight EPR spectra (Si-A10, -A14, -A15, -A16, -G7, -G16, -P2, -P4) are determined from optical bleaching experiments via electron paramagnetic resonance. The defect energy levels are all located near the middle of the band gap in between Ec -0.40 eV and Ev +0.40 eV.
- 203. Sov. Phys. Semicond. 10, 1339 (1976) , “Radiation Damage in Silicon Resulting from Complete Stopping of 30 MeV Protons”, Yu. V. Gorelkinski?, V. O. Sigle, V. A. Botvin.The ESR method was usedin a study of radiation defects created in single-crystal silicon by 30 MeV protons. The distribution of the paramagnetic centers was determined as a function of the proton energy between 30 and ~10 MeV. It was established that in this range of energies the rates of introduction of centers with high (~10 keV) and low (~100 eV) threshold energies of formation were independent of the proton energy. The structure of the radiation damage was determined by investigating the ESR spectra of samples with high phosphorus concentrations (~1017-1018 cm-3) after irradiation with various proton doses. For comparison, measurements were made also on silicon samples irradiated with fast reactor neutrons. The probabilities of formation of disordered regions by recoil nuclei of energies exceeding ~10 keV were approximately equal in the proton (30 MeV) and neutron irradiation cases. However, when silicon was bombarded with protons, about 80% of the divacancies (Si-G7 centers) formfed were located outside the disordered regions.
- 204. Solid State Commun. 20, 881 (1976) , “ESR in Iron Doped Silicon Crystals under Stress”, M. Berke, E. Weber and H. AlexanderH. Luft and B. ElschnerThe spin lattice coefficients C11 and C44 characterizing the crystal field under stress are measured for neutral iron at interstitial sites in silicon. The coefficients are one order of magnitude larger than for Fe3+ in MgO. Both C11 and C44 turn out to be negative. (Read more)
- 205. J. Magn. Res. 21, 387 (1976) , “The Divacancy in Silicon: Spin-Lattice Relaxation and Passage Effects in Electron Paramagnetic Resonance”, C. A. J. Ammerlaan, A. van der Wiel.The longitudinal spin-lattice relaxation time T1 of the divacancy in silicon, in its positively charged state, was determined in the temperature region between 10 and 30 K. The study was made by measuring the line shape and amplitude of the electron paramagnetic resonance spectrum of V+2 (the Si-G6 spectrum) in a static magnetic field of 8.24 kOe. the passage conditions in observing the resonances were varied through the transition from adiabatic fast (ωmT1 > 1) to adiabatic slow (ωmT1 < 1) with respect to the audiofrequency (ωm) modulation field. Explicit formulas are derived to describe line shape and amplitude of the resonance in the transition region around ωmT1 = 1. The spin-lattice relaxation time found is given by T1(s) = 3.4 × 105 × T(K)-6.6, which demonstrates that the Raman two-phonon process is the active relaxation mechanism..
- 206. Sov. Phys. Semicond. 9, 1303 (1975) , “Characteristics of Radiation Damage in Silicon Bombarded with U235 Fission Fragments”, Zh. S. Takibaev, Yu. V. Gorelkinskii, V. F. Grishchenko, N. N. Gerasimenko.the ESR method was used in a study of the properties of radiation defects in silicon bombarded with U235 fission fragments. The source of these fragments was uranium dioxide irradiated, together with silicon, by reactor neutrons. It was established that the main defects generated by fission fragments were tetravacancies (called Si-P3 centers) and centers associated with amorphization (VV centers). An analysis of the distribution function of the concentration of paramagnetic centers demonstrated that individual fission fragments were capable of creating point defects in densities sufficient for the formation of an isolated amorphous region in Si. A continuous amorphous layer near the surface of an Si crystal was observed when the fission fragment density was ~1015cm-2. An estimate was obtained of the rate of introduction of paramagnetic centers whose average value was ~104cm-1 per fragment. The ESR signal disappeared completely after annealing at ~600℃.
- 207. Lattice Defects in Semiconductors 23, 126-148 (1975) , Institute of Physics, London , “Lattice Defects in Ion-Implanted Semiconductors”, L. C. Kimerling, J. M. Poate.This paper summerizes the current status of ion implantation damage research in semiconductors. We have attempted to review the recent interesting measurements and theories. the damage process is traced from the production mechanism to the structural and electrical properties of the defects and their annealing characteristics. Defect-impurity interactions and lattice site location of the implanted ion are discussed. New areas of research such as enhanced diffusion, gettering and mixing phenomena are discussed.
- 208. Solid State Commun. 16, 171 (1975) , “On the Role of Defect Charge State in the Stability of Point Defects in Silicon”, L. C. Kimerling, H. M. DeAngelis, J. W. Diebold.Defect annealing in 1-MeV electron-irradiated, phosphorus-doped silicon is studied. Charge state effects are explored directly using a p-n junction structure. A defect state which is associated with the E center (phosphorus-vacancy pair) is found to disappear at approximately 150°C with an... (Read more)
- 209. Sov. Phys. JETP 42, 1073 (1975) , “ESR and Spin Relaxation of Deep Centers in Semiconductors in the Presence of Photoelectrons (Si:Fe0)”, M. F. De?gen, V. Ya. Bratus, B. E. Vugme?ster, I. M. Zaritski?, A. A. Zolotukhin, A. A. Konchits, L. S. Milevski?.An investigation was made of the influence of photoelectrons on the ESR and spin relaxation of deep centers in semiconductors in the specific case of Si:Fe0. It was established that the appearance of conduction electrons generatd by optical illumination reduced the ESR signal intensity and gave rise to photoelectron-stimulated spectral diffusion in an inhomogeneously broadened ESR line of Fe0.Heating photoelectronsby an electric field resulted in a further reduction in the ESR signal of Fe0 because of an increase in the effective temperature of the photoelectrons. The observed behavior was explained by exchange scattering of photoelectrons on Fe0 center. Allowance for photoelectron recombination process made it possible to explain the reduction in the ESR signal whhich occurred as a result of optical illumination. A new mechanism of spectral diffusion in inhomogeneously broadened ESR lines was suggested: this diffusion was due to double exchange scattering of carriers by paramagnetic centers. A comparison of the theory with experiment yielded the cross section for the exchange scattering of electrons by Fe0 impurities and the dependence of the spin-lattice relaxation time of hot photoelectrons on their effective temperature.
- 210. Sov. Phys. Semicond. 8, 1049 (1975) , “Interaction of Hydrogen Atoms and Radiation Defects in the Case of H+ Ion Implantation in Silicon”, V. A. Botvin, Yu. V. Gorelkinskii, V. A. Kudryashev, V. O. Sigle.In an earlier paper1 we demonstrated that paramagnetic defects (Si-B2) were formed as a result of implantation of hydrogen ions in silicon single crystals. We also showed that implanted hydrogen atoms participated in the formation of these defects. Additional experiments were carried out in order to determine the interaction between the implanted hydrogen atoms and defects and to find the influence of these atoms on the recovery of the carrier density.
- 211. Lattice Defects in Semiconductors 23, 433-438 (1975) , Institute of Physics, London , “The EPR Spectra in Silicon with Dislocations”, H. Alexander, M. Kenn, B. Nordhofen, E. Weber.Plastic deformation introducing about 109cm-2 dislocations in silicon gives rise to a complex EPR signal. It consists of a group of central lines around g = 2 and a zero field splitting multiplet of 14 pairs of lines. At low temperature (≤30 K) the g tensor of the four most prominent central lines was determined. The lines belong to the same (broken bond type) centre Si-K1 in diffeerent orientations. The axes of this centre are oriented in an unusual manner. beginning at 60 K additional central lines appear, one of which can be ascribed to the existence of dangling bonds normal to the glide plane of the dislocations. The fine structure multiplet is due to a centre (Si-K2) with its g axes parallel to [011],[011],[100];[011] is the direction of the Burgers vector of most of the dislocations and the axis of a nearly axially symmetric D tensor. The splitting parameter changes strongly with temperature between 60 K and 225 K, where the multiplet disappears. Possible causes for the splitting are discussed.
- 212. Solid State Commun. 14, 735 (1974) , “On the Magnetic Properties of Dislocations in Silicon”, U. Schmidt, E. Weber, H. Alexander, W. Sander.The anisotropy of a group of equidistant lines in the EPR spectrum of plastically deformed Si can be described as line splitting in a nearly axial crystal field, the axis being parallel to the Burgers vector of the dislocations. We suppose that the spins of the unpaired electrons in the core of the... (Read more)
- 213. Solid State Commun. 15, 1781 (1974) , “EPR evidence of the self-interstitials in neutron-irradiated silicon*1”, Y. H. Lee, J. W. Corbett.Detailed studies on Si---P6 spectrum show that the spectrum has an unusual g-tensor symmetry (monoclinic II) and a large stress alignment (n/n|| = 17). A number of defect models for this spectrum were considered; two (<100> split-interstitial and <100> di-interstitial) are briefly discussed here.... (Read more)
- 214. Radiat. Eff. 22, 169 (1974) , “New EPR Spectra in Neutron-Irradiated Silicon (II)”, Y. H. Lee, P. R. Brosious, J. W. Corbett.Four new EPR spectra, arising from intrinsic defects in silicon created by neutron-irradiation, are resolved. Each spectrum is briefly discussed. Further detailed studies are required to establish defect models.
- 215. Phys. Lett. A 49, 425 (1974) , “An orientation-dependent defect in ion-implanted silicon*1”, Y. H. Lee, P. R. Brosious, J. W. Corbett.A new EPR spectrum is resolved in the N+-implanted silicon, and this center can be produced only by the (110) channeling ions in the region underneath the amorphous layer. (Read more)
- 216. Infra-red studies of crystal defects 1-169 (1973) , Taylor and Francis,London , R. C. NewmanFOREWORD PREFACE 1. INTRODUCTION 2. INFRA-RED ABSORTION FROM A LATTICE CONTAINING POINT DEFECTS. 2.1. Normal Models of Vibration. 2.1.1. The one-dimensional linear chain. 2.1.2. The three-dimensional problem. 2.2. Infra-red Absorption due to Defects in Homopolar Crystals. 2.3. Absorption Measurements. 3. VIBRATIONS OF AN ANHARMONIC LOCAL OSCILLATOR. 3.1. The Sperical Oscillator (R3±Symmetry). 3.2. The Cubic Oscillator. 3.2.1. Oh Symmetry. 3.2.2. Td Symmetry. 3.3. The Trigonal Oscillator. 3.3.1. C3v Symmetry. 3.3.2. D3d Symmetry. 3.4. The Tetragonal Oscillator. 3.4.1. C4v Symmetry. 3.4.2. D4h Symmetry. 3.5. Resume and Result for other Point Symmetries. 4. LOCALIZED VIBRATIONS OF HYDROGEN AND DEUTERIUM IN THE ALKALINE EARTH FLUORIDES. 4.1. Isolated H- and D- Ions on F- Sites (Td Symmetry). 4.1.1. Reductions in symmetry due to the application of a uniaxial stress or an eletric field. 4.2. Other Local Mode Absorption due to H- Ions in Normally Undoped Crystals. 4.3. H- Ions in Crystals containing Rare-earth Ions. 4.3.1. Compensation of R.E.3+ by interstitial H- ions. 4.3.2. Divalent rare-earth hydrogen pairs. 4.3.3. R.E.3+-H- complexes in crystals containing oxygen. 4.4. Other Effects of Irradiation and Absorption due to Neutral Hydrogen. 4.5. The Electron-Phonon Interaction for a Rare-earth Hydrogen pair. 5. HYDROGEN IONS IN ALKALI HALIDE CRYSTALS. 5.1. Pure Crystals. 5.2. U centres in Mixed Halides. 5.2.1. Experimental observations. 5.2.2. Theoretical models. 5.3. Interstitial H- ions. 6. ONE-PHONON INFRA-RED ABSORPTION IN SILICON. 6.1. Neutral Impurities. 6.1.1. Isolated interstitial oxygen. 6.1.2. Absorption due to isolated substitutional impurities. 6.2.2. Boron paired with substitutional impurities. 6.2.3. Boron paired with lithium. 7. IRRADIATION DAMAGE IN SILICON. 7.1. The Oxygen-vacancy Centre. 7.2. Carbon-doped Silicon. 7.3. Germanium-doped Silicon. 7.4. Boron-doped Silicon. 7.5. Neutron Irradiations. 7.6. Ion-implantation studies. 7.7. Concluding Remarks. 8. ONE-PHONON ABSORPTION IN GERMANIUM. 8.1. Neutral Impurities. 8.1.1. Substitutional elements. 8.1.2. Oxygen impurities. 8.2. Electrically Active Impurities. 8.3. Irradiation Damage Bands. 9. COMPOUND III-V SEMICONDUCTORS. 9.1. GAllium Phosphide. 9.2. Gallium Arsenide. 9.2.1. Silicon and boron-doped crystals. 9.2.2. Lithium and copper-diffused crystals. 9.2.3. Crystals containing other impurities. 9.2.4. Ion implantation and other impurities. 9.3. Local Mode Absorption in other III-V Compounds. 9.4. Compensation of Experimental Results with Theory. REFERENCES
- 217. Radiation damage and defects in semiconductors 284 (1973) , The Institute of Physics,London, , “The influence of oxygen and acceptor impurities on the annealing of radiation defects in p-type silicon ”, V.S Vavilov,B.N Mukashev,A.V SpitsynBoth crucible-grown and float-zoned p-type silicon crystals, doped either with boron, gallium or aluminium, were irraadiated at 78 or 300 K by 1.5 MeV electrons and then were annealed at temperatures up to 700 K. Data on the concentration of radiation defects and their energy levels were derived from Hall coefficient and conductivity measurements. In the lowest oxygen content samples, a prominent carrier concentration recovery stage,located at T>360 K, was observed and was observed and was shown to be associated with annealing of the Ev+0.45 eV level radiation defects. The annealing activation energy increased practically linearly with the atomic size of the impurity. Therefore it is suggested that the defects in question are complexes of vacancies with acceptor impurity atoms.
- 218. Jpn. J. Appl. Phys. 12, 1307 (1973) , “ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation”, K. Murakami, K. Masuda, K. Gamo, S. Namba.Paramagnetic defects have been studied over a wide dose range. At doses>6×1014 P+/cm2, only one isotropic spectrum of g=2.0062±0.0004 which characterizes a continuous amorphous layer is observed. At doses between 0.1 and... (Read more)
- 219. Sov. Phys. Semicond. 6, 1453 (1973) , “Paramagnetic Centers in Silicon Irradiated with Heavy Charged Particles”, V. A. Botvin, Yu. V. Gorelkinskii, V. O. Sigle, M. A. Chubisov.The ESR method was used to study paramagnetic centers generated in silicon single crystals by irradiation with 37-MeV α particles or 9-MeV protons at 273ºK. The experiments were carried out on silicon grown by the floating-zone and Czochralski methods and doped with P31, B11, and A27. The existence of Si-P3, Si-P1, Si-P4, Si-P5, Si-S1 (Si-B2), and Si-S2 centers was established in the proton-irradiated samples. The Si-S1 and Si-S2 centers were not found in the α-irradiated silicon. The characteristics of isochronous annealing of the various centers were determined. The distribution of the paramagnetic centers along the trajectories of the incident particles was determined by successive removal of silicon layers from the irradiated side. The rates of introduction of the paramagnetic centers by α particles and protons were estimated.
- 220. Jpn. J. Appl. Phys. 10, 52-62 (1971) , “Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I”, Y. NishiThree kinds of paramagnetic centers named PA, PB and PC have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. PA (g=∼2.000, ΔH=∼4 Oe), and PB having anisotropic g-value... (Read more)
- 221. Radiat. Eff. 15, 77 (1972) , “New EPR Spectra in Neutron-Irradiated Silicon”, Y. H. Lee, Y. M. Kim, J. W. Corbett.Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the giving rise to these spectra.
- 222. Sov. Phys. Semicond. 5, 1930 (1972) , “EPR of Zinc Atoms in p-Type Silicon”, V. B. Ginodman, P. S. Gladkov, B. G. Zhurkin, B. V. Kornilov.Zinc is a double accepter in silicon and it introduces two levels, E + 0.31 and E + 0.55 eV, into forbidden band [1,2]. The electrical and optical properties of zinc-doped silicon have been investigated by several workers [2-4]. A brief report of the observation of EPR in silicon is given in [5,6]: in these investigations the magnetic field H was perpendicular to the axis of compression of a crystal. Uniaxial compression gave rise to a structure in EPR spectrum of Zn67 and this structure was attributed to the hyperfine interaction of an unpaired hole with the magnetic moment of the Zn67 nucleus. The present paper describes the result of an investigation of the EPR of the Zn- state of zinc in p-type silicon doped with zinc in p-type silicon doped with zinc and phosphorus. The investigation was carried out at liquid helium temperature.
- 223. Radiat. Eff. 8, 229 (1971) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon by EPR Measurements”, B. Goldstein.Single crystal sylicon, both with and without oxygen, has been diffused with lithium to concentrations ~1017/cm3, irradiated woth 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presene of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li---one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiatioin at 40ºK followecd by annealing at higher temperatures show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK---just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitial which produce a (Li-O-interstitial) complex in O-containing Si, and (Li-interstitial) complex in O-free Si.
- 224. Radiat. Eff. 8, 203 (1971) , “An EPR Study of Fast Neutron Radiation Damage in Silicon”, D. F. Daly, H. E. Noffke.Using electron paramagnetic resonance (EPR) the indensity of the point defects produced by fast neutron irradiation of silicon at room temperature has been determined and the concentration of each defect has been measured. Irradiations were perfrmed at an unmoderated fast burst reactor to assure that damage from gamma irradiation could be neglected and that all the obsserved damage could be attributed to desplacements by fast neutrons. Total fast neutron fluence between 1.2×1015 n/cm2 and 7×1015 n/cm2 was used. The initial rate of removal of the phosphorus donor agrees with the initial carrier removal. However, the production rate for the paramagnetic damage centers is approximately 10 per cent of the carrier removal and less than 1 per cent of the estimated number of displacements per neutron collision. For samples containing approcimately 1016 phosphorus donoers/cm3, the neutral spectrum is observed simultaneously with the negative divacancy spectrum (Si-G7) in both crucible-grown and float-zone crystals. According to the energy level scheme determined for these spectra in electron irradiation silicon, these spectra cannot appear simultaneously if the sample is in equilibrium and uniformly irradiated. From the observation of these spectra, it is concluded that the damage concentrarion and hence the depth of the Fermi level is nonuniform on a microscopic scale. These results are interpreted according to the cluster model for the neutron damage. The cluster consists of a core of damaged silicon with the Fermi level at the center of the band gap and a surrounding space charge region. Outside the space charge region, the Fermi level is the same as in undamaged silicon. It is concluded that the low production rate of the point defects and the non-uniform Fermi level constitute microscopic evidence for the defect cluster model of fast neutron damage in silicon.
- 225. Solid State Commun. 8, 175 (1970) , “Low temperature electron irradiation of silicon containing carbon ”, A. R. Bean and R. C. NewmanPrevious work has shown that irradiation of silicon at low temperatures leads to the formation of a centre giving rise to local mode absorption bands at 922 and 932 cm-1; this centre has been ascribed to a carbon-oxygen complex with a trapped silicon interstitial in an adjacent site. It... (Read more)
- 226. Sov. Phys. Semicond. 2, 688 (1968) , “Electron Paramagnetic Resonance of Boron in Dislocation-Free Silicon Crystals”, B. G. Zhurkin, N. A. Penin, N. N. Sibeldin.A study was made of the dependence of the EPR line of boron in uncompensated p-type silicon on the uniaxial compression, the concentration of boron in dislocation-free crystals, and on the dislocation density. It was found that an increase in the concentration of boron from 2・1016 to 1.5・1018 cm-3 broadened the resonance line. When the dislocation density was increased from zero to 2・105 cm-2, the resonance line broadened to more than twice its original width. The experiments were carried out at T = 4.2ºK and the compressive forces were applied along the [111] and [110]. The line width was practically independent of the direction of compression. The results obtained were in qualitative agreement with the theory.
- 227. Radiation Damage in Semiconductors 97-113 (1965) , Dunod, Paris , “A Review of EPR Studies in Irradiated Silicon”, G. D. Watkins.1. INTRODUCTION (p.97): 2. THE EPR EXPERIMENT (p.97): 3. RESULTS (p.99): A. The lattice Vacancy (p.99), B. Vacancies Trapped by Other Defects (p.102), C. Vacancy Motion (p.103), D. Interstitial Defects (p.103), E. Other Spectra (p.105), 4. SUMMARY AND CONCLUSION (p.110): 5.ACKNOWLEDGMENTS (p.110):
- 228. J. Phys. Soc. Jpn. 20, 1447 (1965) , “Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures”, S. Maekawa, N. Kinoshita.Effects of exchange and motion on electron spin resonance spectrum of phosphorus doped Si with concentration of 3×1016cm-3~3×1019cm-3 were investigated at liquid helium temperatures and at about 9300 Mc/sec. At lower concentrations, the intensity of... (Read more)
- 229. J. Phys. Soc. Jpn. sppl. II, 18, 22 (1963) , “An EPR Study of the Lattice Vacancy in Silicon”, G. D. Watkins.An EPR spectrum is observed in silicon which is identified as arising from the isolated lattice vacancy. It is observed in p-type silicon which has been irradiated in situ at~40ºK by 1.5 Mev electrons. A simple molecular orbital treatment of the vacancy is outlined which describes many of the features of the spectrum and predicts the observed anisotrophy as resulting from a Jahn-Teller distortion. Studies of the disappearance of the vacancy vs anneal are described and interpreted in terms of long range migration of the vacancy and subsequent trapping by other defects. The activation energy for vacancy motion is determined to be 0.33±.03 ev in p-type material. Further study is required in n-type silicon before an unambiguous interpretation of the emergence of vacancy-impurity pairs can be made.
- 230. Solid State Physics 13, 223-304 (1962) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Electron Spin Resonance in Semiconductors”, G. W. Ludwig, H. H. Woodbury.I. Introduction (p.223): II. The Resonance Technique (p.226): 1. The Spin Hamiltonian (p.226), 2. The Spin Resonance Spectrum (p.231), 3. Experimental Techniques (p.237), III. Resonance Studies in Silicon (p.243): 4. Shallow Donor Impurities (p.244), 5. Shallow Acceptor Impurities (p.259), 6. Transition Metal Ions (p.263), 7. Impurity Pairs (p.273), 8. Radiation Damage Centers (p.280), IV.Resonance Studies in Other Semiconductors (p.286): 9. Germanium (p.286), 10. Graphite and Diamond (p.290), 11. Silicon Carbide (p.293), 12. Indium Antimonide and Gallium Phosphide (p.294), 13. Zinc Sulfide and Related Semiconductors (p.295), Acknowledgments (p.304)
- 231. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
- 232. phys. stat. sol. (a) 157, 405 (1996) , “On the Nature of Deep Donors Created at 450 C in Boron-Doped p-Si”, V. M. Babich, N. P. Baran, M. Ya. Valakh, V. L. Kiritsa, G. Yu. Rudko.It is shown that the boron impurity in oxygen-rich p-Si is involved in the formation of electrically active complexes, namely, deep thermal donors, during thermal annealing at T = 450°C. The conclusion is based on experimental results obtained by several techniques such as Hall measurements,... (Read more)
- 233. phys. stat. sol. (b) 86, 119 (1978) , “Nonrandom Strain in "crushed" silicon. EPR of thermally excited lithium donors”, M. Höhne.Si:Li single crystals with crushed surface layers are investigated by EPR. Measurements at 1.5 K show that these layers, which contain in the outer part also the dangling bond centre with g = 2.0055, nearly preserve their crystalline order, but exhibit strains preferentially perpendicular to the... (Read more)
- 234. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 235. phys. stat. sol. (b) 164, 503 (1991) , “EPR of New Platinum-Related Complexes in Silicon I. Defects of Symmetry C1h Formed at Intermediate Temperatures”, M. Höhne, W. Gehlhoff.The variety of Pt-related complex defects in silicon is enlarged by EPR detection of a new group of defects, each of them containing one Pt ion. They are formed by different annealing procedures, including a step at intermediate temperatures. Two of the new complexes exhibit an EPR spectroscopic... (Read more)
- 236. phys. stat. sol. (b) 165, 189 (1991) , “EPR of New Platinum-Related Complexes in Silicon. II. Coexistence of a Tetragonal Jahn-Teller System and a Nearly Trigonal System in One Pair”, M. Höhne, W. Gehlhoff.A spectroscopic peculiarity of two Pt-related complex defects is interpreted for both of them by assuming one Pt ion in a crystal field, which is tetragonal, though another defect is trigonally coordinated. This coexistence is discussed in the framework of a static Jahn-Teller effect. Wave... (Read more)
- 237. phys. stat. sol. (b) 210, 13 (1999) , “Neutral Vacancies in Group-IV Semiconductors”, A. Zywietz, J. Furthmüller, F. BechstedtAb initio plane-wave-supercell calculations are performed for the neutral monovacancies in silicon, silicon carbide and diamond using ultrasoft non-normconserving Vanderbilt pseudopotentials. We study the structure, the energetics and the single-particle energy spectrum. The local symmetry, the... (Read more)
- 238. Phys. Rev. B 43, 6569 (1991) , “Optically detected magnetic resonance of dislocations in silicon”, V. Kveder, P. Omling, H. G. Grimmeiss, Yu. A. OsipyanThe observation of optically detected magnetic resonance (ODMR) signals directly correlated with dislocations in silicon is reported. The ODMR signals are identified as resonances from free electrons, dangling bonds, and quasifree holes bound to a one-dimensional potential in straight dislocations.... (Read more)
- 239. Phys. Rev. B 51, 16721 (1995) , “Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and Deep-Level Transient Spectroscopy”, V. Kveder, T. Sekiguchi, K. Sumino.Dislocation loops consisting of long and straight segments of 60 and screw parts were introduced in p-type Si by deformation under a high stress at a relatively low temperature. Electronic states associated with such dislocations were investigated by means of electric-dipole spin resonance, with... (Read more)
- 240. Solid State Commun. 73, 393 (1990) , “Electron paramagnetic resonance of nickel in silicon. — I. Identification of spectrum”, L. S. Vlasenko, N. T. Son, A. B. van Oosten, C. A. J. Ammerlaan, A. A. Lebedev, E. S. Taptygov, V. A. KhramtsovResults are reported on the paramagnetic resonance spectrum recently identified with the negatively charged state of substitutional nickel in n-type silicon. Studies were made on the presence of the spectrum in silicon with different concentrations of phosphorus doping and under various conditions... (Read more)
- 241. Appl. Phys. Lett. 70, 1137 (1997) , “In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon”, Satoshi Yamasaki, Takahide Umeda, Junichi Isoya, and Kazunobu TanakaIn situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the... (Read more)
- 242. Appl. Phys. Lett. 91, 122109 (2007) , “Determining the defect parameters of the deep aluminum-related defect center in silicon”, Philipp Rosenits, Thomas Roth, Stefan W. Glunz, and Svetlana BeljakowaThrough a combined application of two characterization methods, deep-level transient spectroscopy and lifetime spectroscopy, the lifetime-limiting defect level in intentionally aluminum-contaminated Czochralski silicon has been analyzed and a complete set of defect parameters could be obtained. This... (Read more)
- 243. J. Appl. Phys. 96, 3721 (2004) , “Fluorine-enhanced boron deffusion induced by fluorine postimplantation in silicon”, Taiji NodaIn this article, the postimplanted fluorine effect on boron transient-enhanced diffusion (TED) and dose loss during a 750°C annealing is shown. 19F implants at 2 keV, after 11B implant at an energy of 1 keV,3×1014/cm2, have been investigated in... (Read more)
- 244. Nucl. Instrum. Methods Phys. Res. B 230, 220 (2005) , “Interaction between implanted fluorine atoms and point defects in preamorphized silicon”, G.Impellizzeri and J.H.R.dos Santos and S.Mirabella and E.Napolitani and A.Carnera and F.Priolo
- 245. Appl. Phys. Lett. 86, 101905 (2005) , “Mechanisms of B deactivation contol by F co-implantation”, N.E.B.Cowern and B.Colombeau and J.Benson and A.J.smith and W.Lerch and S.Paul and T.Graf and F.Cristiano and X.Hebras and D.BolzeThermal annealing after preamorphization and solid-phase epitaxy of ultrashallow B implants leads to deactivation and diffusion driven by interstitials released from end-of-range defects. F inhibits these processes by forming small clusters that trap interstitials. A competing BF interaction... (Read more)
- 246. Appl. Phys. Lett. 89, 052114 (2006) , “Fluorine-vacancy complexes in ultrashallow B-implanted Si”, D.A.Abdulmalik and P.G.oleman and N.E.B.Cowern and A.J.Smith and B.J.Sealy and W.Lerch and S.Paul and F.CristianoShallow fluorine-vacancy (FV) complexes in Si have been directly observed using variable-energy positron annihilation spectroscopy and secondary ion mass spectrometry. The FV complexes, introduced to combat the deactivation and transient-enhanced diffusion of ultrashallow boron, were observed in... (Read more)
- 247. Appl. Phys. Lett. 85, 1538 (2004) , “Observation of fluorine-vacancy complexes in silicon”, P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison, M. E. LawWe show direct evidence, obtained by positron annihilation spectroscopy, for the complexing of fluorine with vacancies in silicon. Both float zone and Czochralski silicon wafers were implanted with 30 keV fluorine ions to a fluence of 2×1014 ions/cm2, and studied in the... (Read more)
- 248. J. Appl. Phys. 102, 013530 (2007) , “Fluorine-vacancy complexes in Si-SiGe-Si structures”, D. A. Abdulmalik, P. G. Coleman, H. A. W. El Mubarek, and P. AshburnFluorine-vacancy (FV) complexes have been directly observed in the Si0.94Ge0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffusion in the SiGe layer via... (Read more)
- 249. Phys. Rev. Lett. 98, 265502 (2007) , “Monovacancy and Interstitial Migration in Ion-Implanted Silicon”, P. G. Coleman and C. P. BurrowsThe migration of monovacancies (V0) and self-interstitials (I) has been observed in ion-implanted low-doped float-zone silicon by variable-energy positron annihilation spectroscopy. V0 and I were created by the in situ implantation of ~20 keV... (Read more)
- 250. Phys. Rev. Lett. 98, 117202 (2007) , “Density-Functional Theory Study of Half-Metallic Heterostructures: Interstitial Mn in Si”, Hua Wu, Peter Kratzer, and Matthias SchefflerUsing density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer δ doping of interstitial Mn (Mnint) are half-metallic. For Mnint concentrations of 1/2 or 1 layer, the states induced in the band... (Read more)
- 251. Phys. Rev. B 75, 113201 (2007) , “Local structure around Mn atoms in Si crystals implanted with Mn+ studied using x-ray absorption spectroscopy techniques”, A. Wolska, K. Lawniczak-Jablonska, M. Klepka, M. S. Walczak, and A. MisiukThe local order around Mn atoms in the Mn-implanted Si samples, with ferromagnetic properties, has been investigated by use of x-ray-absorption spectroscopy techniques. Analysis of both extended x-ray-absorption fine structure and x-ray absorption near-edge structure spectra clearly indicates that... (Read more)
- 252. Phys. Rev. B 74, 235317 (2006) , “Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K”, Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchi, Kei Takashina, Hiroshi Yamaguchi, Kazuma Hiratsuka, Seiji Horiguchi, Hiroshi Inokawa, and Yasuo TakahashiWe investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. We focus on transistors with phosphorus donor concentrations higher than those previously studied, where we expect conduction to rely on donor... (Read more)
- 253. Phys. Rev. B 74, 235301 (2006) , “Precursor mechanism for interaction of bulk interstitial atoms with Si(100)”, Xiao Zhang, Min Yu, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan, Richard D. Braatz, and Edmund G. SeebauerIn the same way that gases react with surfaces from above, solid-state point defects such as interstitial atoms can react from below. Little attention has been paid to this form of surface chemistry. Recent bulk self-diffusion measurements near the Si(100) surface have quantified Si interstitial... (Read more)
- 254. Phys. Rev. B 74, 235209 (2006) , “Comparison of two methods for circumventing the Coulomb divergence in supercell calculations for charged point defects”, A. F. Wright and N. A. ModineDensity-functional-theory calculations were performed for the unrelaxed +2 Si vacancy and +2 self-interstitial utilizing periodic boundary conditions and two different methods—the uniform background charge method and the local moment counter charge method—for circumventing the divergence... (Read more)
- 255. Phys. Rev. B 74, 205324 (2006) , “Surface smoothness of plasma-deposited amorphous silicon thin films: Surface diffusion of radical precursors and mechanism of Si incorporation”, Mayur S. Valipa, Tamas Bakos, and Dimitrios MaroudasWe present a detailed analysis of the fundamental atomic-scale processes that determine the surface smoothness of hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of molecular-dynamics (MD) simulations of radical precursor migration on surfaces... (Read more)
- 256. Phys. Rev. B 74, 205202 (2006) , “Structural model of amorphous silicon annealed with tight binding”, N. Bernstein, J. L. Feldman,, and M. FornariWe present a model of amorphous silicon generated by extensive annealing of a continuous random network structure using a molecular dynamics simulation with forces computed by a tight-binding total energy method. We also produce a refined model by relaxing the annealed model using density functional... (Read more)
- 257. Phys. Rev. B 74, 174115 (2006) , “Modeling of damage generation mechanisms in silicon at energies below the displacement threshold”, Iván Santos, Luis A. Marqués, and Lourdes PelazWe have used molecular dynamics simulation techniques to study the generation of damage in Si within the low-energy deposition regime. We have demonstrated that energy transfers below the displacement threshold can produce a significant amount of damage, usually neglected in traditional radiation... (Read more)
- 258. Phys. Rev. Lett. 98, 227401 (2007) , “Formation of Hydrogen Impurity States in Silicon and Insulators at Low Implantation Energies”, T. Prokscha, E. Morenzoni, D. G. Eshchenko, N. Garifianov, H. Glückler, R. Khasanov, H. Luetkens, and A. SuterThe formation of hydrogenlike muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz, and sapphire. By varying the initial energy of positive muons... (Read more)
- 259. Phys. Rev. B 74, 153311 (2006) , “Electron transport in laterally confined phosphorus δ layers in silicon”, S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. ShenTwo-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport of such quasi-one-dimensional systems with and without a perpendicular magnetic field was characterized at cryogenic... (Read more)
- 260. Phys. Rev. B 74, 195202 (2006) , “Interstitial-mediated mechanisms of As and P diffusion in Si: Gradient-corrected density-functional calculations”, Scott A. Harrison, Thomas F. Edgar, and Gyeong S. HwangGradient-corrected density-functional calculations are used to determine the structure, stability, and diffusion of arsenic-interstitial and phosphorus-interstitial pairs in the positive, neutral, and negative charge states. For both cases, our calculations show that the neutral pair will be... (Read more)
- 261. Phys. Rev. B 74, 184108 (2006) , “Interpreting Mössbauer spectra reflecting an infinite number of sites: An application to Fe1−xSi synthesized by pulsed laser annealing”, A. Falepin, S. Cottenier, C. M. Comrie, and A. VantommeWe present a study on the interpretation of conversion electron Mössbauer spectra reflecting an infinite number of sites, in casu Mössbauer spectroscopy on Fe1−xSi layers on Si, synthesized by pulsed laser annealing. These spectra display a broad... (Read more)
- 262. Phys. Rev. B 75, 195209 (2007) , “Mechanism and energetics of self-interstitial formation and diffusion in silicon”, Ramakrishnan Vaidyanathan, Michael Y. L. Jung, and Edmund G. SeebauerRecent work has suggested that prior determinations of diffusion mechanism and point defect thermodynamics in silicon have been affected by nonequilibrium effects stemming from uncontrolled adsorption-induced suppression of a pathway for defect creation at the surface. Through silicon self-diffusion... (Read more)
- 263. Phys. Rev. B 75, 193203 (2007) , “Hf defects in c-Si and their importance for the HfO2/Si interface: Density-functional calculations”, Wanderlã L. Scopel, Antônio J. R. da Silva, and A. FazzioWe have studied, using ab initio density functional theory calculations, substitutional and interstitial Hf impurities in c-Si, for various charge states. Our results indicate that (1) the tetrahedral interstitial defect is energetically more favorable than the substitutional and (2)... (Read more)
- 264. Phys. Rev. B 75, 144103 (2007) , “Multiscale modeling of point defects in Si-Ge(001) quantum wells”, B. Yang and V. K. TewaryA computationally efficient hybrid Green's function (GF) technique is developed for multiscale modeling of point defects in a trilayer lattice system that links seamlessly the length scales from lattice (subnanometers) to continuum (bulk). The model accounts for the discrete structure of the lattice... (Read more)
- 265. Phys. Rev. B 75, 035211 (2007) , “Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon”, H. Bracht, H. H. Silvestri, I. D. Sharp, and E. E. HallerWe report the diffusion of boron, arsenic, and phosphorus in silicon isotope multilayer structures at temperatures between 850 °C and 1100 °C. The diffusion of all dopants and self-atoms at a given temperature is modeled with the same setting of all native-point-defect-related parameters.... (Read more)
- 266. Phys. Rev. B 75, 033303 (2007) , “Excitons in silicon nanocrystallites: The nature of luminescence”, Eleonora Luppi, Federico Iori, Rita Magri, Olivia Pulci, Stefano Ossicini, Elena Degoli, and Valerio OlevanoThe absorption and emission spectra of silicon nanocrystals up to 1 nm diameter have been calculated within a first-principles framework. Our calculations include geometry optimization and the many-body effects induced by the creation of an electron-hole pair. Starting from hydrogenated silicon... (Read more)
- 267. Phys. Rev. Lett. 98, 077601 (2007) , “Multiple-Pulse Coherence Enhancement of Solid State Spin Qubits”, W. M. Witzel and S. Das SarmaWe describe how the spin coherence time of a localized electron spin in solids, i.e., a solid state spin qubit, can be prolonged by applying designed electron spin resonance pulse sequences. In particular, the spin echo decay due to the spectral diffusion of the electron spin resonance frequency... (Read more)
- 268. Phys. Rev. Lett. 98, 055504 (2007) , “Ortho-Para Conversion of Interstitial H2 in Si”, M. Hiller, E. V. Lavrov, and J. WeberOrtho-para conversion of isolated interstitial H2 in single-crystalline Si is studied by Raman scattering. This process is suggested to be caused by the interaction of H2 with the nuclear magnetic moment of 29Si. At 77 K the ortho-to-para conversion rate is... (Read more)
- 269. Phys. Rev. B 75, 075316 (2007) , “Theoretical investigation of a Mn-doped Si/Ge heterostructure”, J. T. Arantes, Antônio J. R. da Silva, A. Fazzio, and A. AntonelliWe investigate, through ab initio density-functional theory calculations, the electronic and structural properties of neutral Mn impurities at tetrahedral interstitial and substitutional sites in both Si and Ge layers of a Si/Ge heterostructure. We conclude that substitutional Mn at the Ge... (Read more)
- 270. Phys. Rev. B 75, 075306 (2007) , “Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)”, G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. DamilanoThe optical properties of vertically stacked self-assembled GaN/AlN quantum dots (QD's) grown on Si substrates were studied by means of temporally and spatially resolved cathodoluminescence (CL). An analysis of the CL spectra, thermal activation energies, and measured decay times of the QD... (Read more)
- 271. Phys. Rev. B 75, 075304 (2007) , “Damage evolution in low-energy ion implanted silicon”, R. Karmouch, Y. Anahory, J.-F. Mercure, D. Bouilly, M. Chicoine, G. Bentoumi, R. Leonelli, Y. Q. Wang, and F. SchiettekatteThe annealing of damage generated by low-energy ion implantation in polycrystalline silicon (poly-Si) and amorphous silicon (a-Si) is compared. The rate of heat release between implantation temperature and 350–500 °C for Si implanted in both materials and for different ions implanted in... (Read more)
- 272. Phys. Rev. B 75, 075206 (2007) , “Isotope dependence of the vibrational lifetimes of light impurities in Si from first principles”, D. West and S. K. EstreicherThe vibrational lifetimes of a range of H-related defects and interstitial O (Oi) in Si, including isotopic substitutions, are calculated from first principles as a function of temperature. The theoretical approach is explained in detail. The vibrational lifetimes of... (Read more)
- 273. Phys. Rev. B 75, 075201 (2007) , “Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon”, O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte, and P. J. SimpsonWe present a detailed study of the comparative thermal evolutions of H- and D-related defects in silicon implanted with 2×1016 H or D/cm2, or coimplanted with 0.25×1016 He/cm2 and 0.7×1016 H/cm2, in both orders.... (Read more)
- 274. Phys. Rev. B 75, 085439 (2007) , “Real-space investigation of fast diffusion of hydrogen on Si(001) by a combination of nanosecond laser heating and STM”, C. H. Schwalb, M. Lawrenz, M. Dürr,, and U. HöferThe rearrangement of silicon dangling bonds induced by pulsed laser heating of monohydride-covered Si(001) surfaces has been studied by means of scanning tunneling microscopy (STM). The initial configurations, which were created by laser-induced thermal desorption, consist of isolated pairs of... (Read more)
- 275. Phys. Rev. B 75, 085423 (2007) , “Room-temperature atmospheric oxidation of Si nanocrystals after HF etching”, X. D. Pi, L. Mangolini, S. A. Campbell, and U. KortshagenThe effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic... (Read more)
- 276. Phys. Rev. B 75, 085203 (2007) , “Structural and magnetic properties of Mn-implanted Si”, Shengqiang Zhou, K. Potzger, Gufei Zhang, A. Mücklich, F. Eichhorn, N. Schell, R. Grötzschel, B. Schmidt, W. Skorupa, M. Helm, J. Fassbender, and D. GeigerStructural and magnetic properties in Mn-implanted, p-type Si were investigated. High resolution structural analysis techniques such as synchrotron x-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as-implanted samples. Depending on the Mn fluence,... (Read more)
- 277. Phys. Rev. Lett. 98, 096805 (2007) , “Observation of the Linear Stark Effect in a Single Acceptor in Si”, L. E. Calvet, R. G. Wheeler, and M. A. ReedThe Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and... (Read more)
- 278. Phys. Rev. Lett. 98, 095901 (2007) , “Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon”, Yasuo Shimizu, Masashi Uematsu, and Kohei M. ItohWe have determined silicon self-diffusivity at temperatures 735–875 °C based on the Raman shift of longitudinal optical phonon frequencies of diffusion annealed 28Si/30Si isotope superlattices. The activation enthalpy of 3.6 eV is obtained in such low temperature... (Read more)
- 279. Phys. Rev. Lett. 97, 256602 (2006) , “Bistability-Mediated Carrier Recombination at Light-Induced Boron-Oxygen Complexes in Silicon”, Mao-Hua Du, Howard M. Branz, Richard S. Crandall, and S. B. ZhangA first-principles study of the BO2 complex in B-doped Czochralski Si reveals a defect-bistability-mediated carrier recombination mechanism, which contrasts with the standard fixed-level Shockley-Read-Hall model of recombination. An O2 dimer distant from B causes only weak... (Read more)
- 280. Phys. Rev. Lett. 97, 255902 (2006) , “Atomistic Mechanism of Boron Diffusion in Silicon”, Davide De Salvador, Enrico Napolitani, Salvatore Mirabella, Gabriele Bisognin, Giuliana Impellizzeri, Alberto Carnera, and Francesco PrioloB diffuses in crystalline Si by reacting with a Si self-interstitial (I) with a frequency g and so forming a fast migrating BI complex that can migrate for an average length λ. We experimentally demonstrate that both g and λ strongly depend on the free hole... (Read more)
- 281. Phys. Rev. Lett. 97, 227401 (2006) , “Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States”, A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. HallerWe resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine... (Read more)
- 282. J. Phys. Chem. Solids 24, 1467 (1963) , “Spin and combined resonance on acceptor centres in Ge and Si type crystals—I Paramagnetic resonance in strained and unstrained crystals”, G. L. Bir, E. I. Butikov, G. E. Pikus.A theory of paramagnetic resonance on acceptor centres in deformed and non-deformed Ge and Si type crystals is developed. The splitting of the ground state under the action of the deformation and magnetic field is determined and the probability of transitions between levels is estimated. Using the... (Read more)
- 283. Phys. Rev. Lett. 23, 581 (1969) , “Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide”, M. H. Brodsky and R. S. TitleThe g values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a... (Read more)Ge Si SiC| EPR| Carbon D Germanium Silicon amorphous dangling-bond .inp files: Si/amorphous | last update: Takahide Umeda
- 284. Phys. Rev. B 59, 13242 (1999) , “Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures ”, C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. SchfflerStrained Si/Si0.75Ge0.25 heterostructures, grown by solid source e-beam evaporation molecular-beam epitaxy on Si(100) substrates, have been studied by electrically detected magnetic resonance. Samples with a low-temperature mobility of about 105 cm2/V s... (Read more)
- 285. Appl. Phys. Lett. 88, 021901 (2006) , “H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98B0.02/Si structures”, L. Shao, Y. Lin, J. G. Swadener, J. K. Lee, Q. X. Jia, Y. Q. Wang, M. Nastasi, P. E. Thompson, N. D. Theodore, T. L. Alford, J. W. Mayer, P. Chen, S. S. LauAn approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related... (Read more)
- 286. Appl. Phys. Lett. 89, 011909 (2006) , “Unusual hydrogen distribution and its change in hydrogenated amorphous silicon prepared using bias electric-field molecular beam deposition”, Nobuyuki Matsuki, Satoshi Shimizu, Michio Kondo, and Akihisa MatsudaHydrogenated amorphous silicon (a-Si:H) films prepared using a molecular beam deposition (MBD) method show an unusually sharp, narrow infrared absorption peak at 20802090 cm1, which is thought to result from surface SiH species in the a-Si:H. The sharp, narrow... (Read more)
- 287. Appl. Phys. Lett. 90, 073507 (2007) , “Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise”, P. Magnone, F. Crupi, L. Pantisano, and C. PaceThe impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline... (Read more)
- 288. J. Appl. Phys. 101, 023515 (2007) , “He induced nanovoids for point-defect engineering in B-implanted crystalline Si”, E. Bruno, S. Mirabella, F. Priolo, E. Napolitani, C. Bongiorno, and V. RaineriIn this paper we present a systematic study on the formation of He ion implantation induced nanovoids in Si and how they influence the self-interstitial (Is) supersaturation, thus affecting the diffusion and electrical activation of implanted boron in crystalline silicon. We implanted He ions... (Read more)
- 289. Phys. Rev. Lett. 98, 026801 (2007) , “Surface Dangling-Bond States and Band Lineups in Hydrogen-Terminated Si, Ge, and Ge/Si Nanowires”, R. Kagimura, R. W. Nunes, and H. ChachamWe report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels ε(+/-)... (Read more)
- 290. J. Appl. Phys. 101, 013703 (2007) , “Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si”, B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers, and L. ColomboElectron spin resonance measurements on 4 and 40 nm thick (HfO2)0.6(SiO2)0.4 and (HfO2)0.4(SiO2)0.6 high-κ films on (100)Si wafers detected Pb0 and Pb1... (Read more)
- 291. Phys. Rev. B 75, 045210 (2007) , “Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon”, K. Kuitunen, K. Saarinen, and F. TuomistoWe have measured positron lifetime and Doppler broadening in highly As-doped silicon containing thermally generated V-As3 defect complexes (vacancy is surrounded by three arsenic atoms). We observe positron detrapping from the V-As3 defect complex and determine... (Read more)
- 292. Defects and radiation effects in semiconductors 19 (1981) , The Institute Physics,London,J. H. Albany , “Theory of silicon vacancy:an Anderson negative-U system”, G.A Braff and E.O Kane and M.schluter
- 293. Defects and radiation effects in semiconductors 199 (1981) , The Institute of Physics,London,J. H. Albany , “Negative-U for point defects in silicon”, G D Watkins,A P Chattaerjee,R D Harris
- 294. Defects and radiation effects in semiconductors 461 (1981) , The Institute of Physics,London, J. H. Albany , “Diffusion coefficient of self-interstitials determined by bulk stacking fault growth in cz silicon”, Kazumi Wada,Naohisa Inoue
- 295. Microscopy of semiconducting materials 463 (1987) , The Institute of Pysics,London,Noble M. Johnson, Stephen G. Bishop, George D. Watkins , “Metal impurities at the SIO2-Si interface”, K Honda,T Nakanishi,A Ohsawa,N Toyokura
- 296. Microscopy of semiconducting materials 39 (1987) , The Institute of Physics,London,A.G. Cullis and P.D. Augustus , “Defects induced by oxygen precipitation in silicon : a new hypothesis involving hexagonal silicon”, A bourret
- 297. Microscopic identification of electronic defects in semiconductors 453 (1985) , Materials Research Socirty Symposia Proceedings,Noble M. Johnson, Stephen G. Bishop, George D. Watkins , “Excitation spectroscopy on silicon using color center lasers : study of the thermally induced p line (0.767eV) defect”, J Wagner,A Dornen,R Sauer
- 298. Thermally stimulated relaxation in solids 93 (1979) , ,P. Braeunlish , “Space-charge spectroscopy in semiconductor”, D.V.Lang
- 299. Phys. Rev. B 74, 235214 (2006) , “Raman scattering study of H2 in Si”, M. Hiller, E. V. Lavrov, and J. WeberIsolated interstitial H2 and H2 bound to interstitial oxygen (O–H2) in single-crystalline Si are studied by Raman scattering. Two Raman signals at 3199(1) and 3193(1) cm−1 (T0 K) are identified as ro-vibrational transitions of... (Read more)
- 300. J. Electrochem. Soc. 136, 2025 (1989) , “Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry”, F. Schomann and K. Graff
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