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- 1. J. Appl. Phys. 100, 043703 (2006) , “Combined optical and electrical studies of the effects of annealing on the intrinsic states and deep levels in a self-assembled InAs quantum-dot structure”, S. W. Lin, A. M. Song, N. Rigopolis, B. Hamilton, A. R. Peaker, and M. MissousThe effects of postgrowth rapid thermal annealing on the electronic states in a relatively long wavelength (~1.3 µm), self-assembled InAs/GaAs quantum-dot structure are investigated. We combine optical and electrical experiments, i.e., photoluminescence (PL) and deep-level transient... (Read more)
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Updated at 2010-07-20 16:50:39
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