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- 1. Solid-State Electronics 7, 811 (1964) , “Permanent degradation of GaAs tunnel diodes*1”, Robert D. Gold, Leonard R. WeisbergPermanent degradation of GaAs tunnel diodes is observed during normal operation at room temperature. This degradation is characterised by a large decrease in peak current, and is quantitatively correlated with a widening of the junction space charge region. The degradation is caused by the flow of... (Read more)
- 2. J. Appl. Phys. 35, 379-397 (1964) , “Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide”, R. N. Hall and J. H. RacetteThe solubilities of substitutional and interstitial copper (Cus and Cui) have been measured in intrinsic and extrinsic n- and p-type Ge, Si, and GaAs, using Cu64. These measurements show that Cus is a triple acceptor in... (Read more)
- 3. Surf. Sci. 5, 267-282 (1966) , “Electron paramagnetic resonance study on silicon, germanium, and gallium arsenide surfaces interacting with adsorbed oxygen*1”, P. Chan , A. SteinemannWhen exposed to various oxygen containing gases, powdered samples of Si, Ge, InAs, and GaAs show an EPR signal at g = 2.0027. Adsorption of gaseous mixtures containing oxygen broadens the line. This is attributed to dipolar interaction between the paramagnetic centres created below the semiconductor... (Read more)
- 4. Solid State Commun. 7, ⅱ‐ⅲ (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G Ribbing
- 5. J. Phys. Chem. Solids 30, 2419-2425 (1969) , “ESR-resonances in doped GaAs and GaP*1”, S. Haraldson , C-G. RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system GaP:Si... (Read more)
- 6. J. Appl. Phys. 40, 4902 (1969) , “EPR Study of Lithium-Diffused, Mn-Doped GaAs”, Reuben S. TitleAn EPR study of the Mn spectra in Li-diffused Mn-doped GaAs is presented. The EPR spectra show that the symmetry at the Mn site is orthorhombic. This thus indicates association between the Mn and Li impurities. A model is proposed which is consistent with the observed symmetry at the Mn site, the... (Read more)
- 7. Appl. Phys. Lett. 17, 109 (1970) , “JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE”, I. Hayashi, M. B. Panish, P. W. Foy, and S. SumskiDouble-heterostructure GaAsAlx Ga1x As injection lasers which operate continuously at heat-sink temperatures as high as 311°K have been fabricated by liquid-phase epitaxy. Thresh-olds for square diodes as low as 100 A/cm2 and for Fabry-Perot... (Read more)
- 8. Phys. Rev. B 3, 2918 (1971) , “Electron-Paramagnetic-Resonance Study of Clean and Oxygen-Exposed Surfaces of GaAs, AlSb, and Other III-V Compounds”, D. J. Miller and D. HanemanClean surfaces of p-type GaP, GaAs, GaSb, and InAs and n-type GaAs, AlSb, and GaSb have been prepared by crushing in ultrahigh vacuum (10-9 Torr) and measured by the electron-paramagnetic-resonance technique at room temperature and 77°K. A small clean-surface signal was found. When... (Read more)
- 9. Appl. Phys. Lett. 23, 469 (1973) , “Defect structure introduced during operation of heterojunction GaAs lasers”, P. Petroff and R. L. HartmanThe nature and origin of the defects responsible for the rapid degradation of stripe geometry GaAsGaAlAs double-heterostructure lasers have been identified by transmission electron microscopy. These defects are formed by a three-dimensional dislocation network which originates at a dislocation... (Read more)
- 10. Phys. Lett. A 50, 49-50 (1974) , “Hyperfine interaction of adsorbed O2− with GaAs surface atoms”, G. H. Stauss , J. J. KrebsEPR measurement of the hyperfine interaction between Ga nuclei and O2− ions adsorbed on clean GaAs is reported. The surface Ga atomic orbital concerned has an almost purely p character. (Read more)
- 11. J. Appl. Phys. 45, 3899 (1974) , “Rapid degradation phenomenon in heterojunction GaAlAs-GaAs lasers”, P. Petroff and R. L. HartmanThe rapid degradation phenomenon in Ga1xAlxAsGaAs DH lasers has been associated with the growth of a dislocation network during the device operation. The nature of these defects has been analyzed by transmission electron microscopy in an effort to... (Read more)
- 12. Sov. Phys. Semicond. 9, 104 (1975) , “Comparison of the results of an investigation of ESR signals and high-temperature measurements of the Hall effect and electrical conductivity of iron-doped GaAs samplesr”, N. I. Suchkova , N. N. Solov'ev
- 13. Sov. Phys. Semicond. 10, 637 (1976) , “Influence of oxygen on properties of gallium arsenide doped with transition metals”, D. G. Andrianov, . M. Omel'yanovski?, E. P. Rashevskaya, N. I. Suchkova
- 14. Sov. Phys. Semicond. 10, 899 (1976) , “Influence of the potential relief in gallium arsenide on optical charging of paramagnetic centers”, D. P. Erchak, V. F. Stel'makh, V. D. Tkachev, G. G. Fedoruk
- 15. Solid State Commun. 20, 143-146 (1976) , “Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESR”, U. Kaufmann and J. SchneiderThe Cr+ ESR spectrum has been observed in GaAs: Cr after near i.r. excitation. The ESR photo-excitation and quenching spectra are used to establish a model for the Cr centers which is consistent with photoconductivity, photo-thermopower, and photocapacitance studies as well as with optical... (Read more)
- 16. Appl. Phys. Lett. 29, 461 (1976) , “Dislocation climb model in compound semiconductors with zinc blende structure”, P. M. Petroff and L. C. KimerlingA new dislocation climb model is proposed for compound semiconductors with the zinc blende structure. Within the model a supersaturation of only one type of point defect is needed for the dislocation climb process. Consideration of the forces involved suggest that in compound semiconductors grown by... (Read more)
- 17. Appl. Phys. Lett. 29, 605 (1976) , “Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser material”, B. Monemar and G. R. WoolhouseWe have observed and analyzed a very rapid form of degradation caused by the optical excitation of GaAs/GaAlAs DH laser material. It consists of the very rapid (50 µ/sec) development of 110-oriented lines originating at a mechanically damaged area and restricted to the optically excited area.... (Read more)
- 18. Sov. Phys. Solid State 19, 100 (1977) , “Impurity states of iron group ions in gallium arsenide and silicon”, E. S. Demidov
- 19. Sov. Phys. Semicond. 11, 426 (1977) , “Magnetic and optical properties of Ni3+ and Co2+ ions of 3d7 configuration in gallium arsenide”, D. G. Andrianov, N. I. Suchkova, A. S. Savel'ev, E. P. Rashevskaya, M. A. Filippov
- 20. Phys. Rev. B 15, 17 (1977) , “EPR of Cr(3d3) in GaAsevidence for strong Jahn-Teller effects”, J. J. Krebs and G. H. StaussThe X-band EPR spectrum of Cr3+(3d3) has been observed in semi-insulating Cr-doped GaAs at 5 K. The Cr is assumed to be substitutional for Ga. The S=3 / 2 center has an orthorhombic (C2ν) symmetry spin Hamiltonian... (Read more)
- 21. Phys. Rev. B 15, 816 (1977) , “Optical detection of conduction-electron spin resonance in GaAs, Ga1-xInxAs, and Ga1-xAlxAs”, Claude Weisbuch and Claudine HermannThe optical detection of conduction-electron spin resonance (CESR) is performed in GaAs, Ga1-xInxAs, and Ga1-xAlxAs alloys. The measured g factor of GaAs is g*=-0.44±0.02. The good precision obtained permits a fruitful comparison with theory.... (Read more)
- 22. Phys. Rev. B 16, 971 (1977) , “EPR of Cr2+ (3d4) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion”, J. J. Krebs and G. H. StaussThe spin-Hamiltonian parameters and low-temperature behavior of Cr2+ in GaAs are found to correspond closely to those in II-VI zinc-blende compounds, suggesting the occurrence of a static Jahn-Teller distortion. Observation of photoinduced charge conversion among Cr2+,... (Read more)
- 23. Phys. Rev. B 16, 974 (1977) , “EPR study of Fe3+ and Cr2+ in InP”, G. H. Stauss, J. J. Krebs, and R. L. HenryAt 4.5 K, Fe3+ (3d5) displays a cubic-symmetry EPR spectrum in InP similar to that in related III-V semiconductors, with parameters g=2.0235(10) and a=+221(2)×10-4 cm-1. Optical transitions near 0.75 and 1.13 eV produce transient decreases in the... (Read more)
- 24. Phys. Lett. A 60, 355-357 (1977) , “Hyperfine structure in the EPR spectrum of O−2 on GaAs surfaces”, D. J. Miller , D. HanemanIt is shown that a previous interpretation of hyperfine structure in the O−2 — GaAs surface EPR spectrum is incorrect. The experimental spectrum is reproduced and re-interpreted in a consistent way. The surface Ga orbital is almost entirely p-like. (Read more)
- 25. Jpn. J. Appl. Phys. 16, 233 (1977) , “Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs-(GaAl)As Double Heterostructure Laser”, Taibun Kamejima, Koichi Ishida, Junji MatsuiBy applying uniaxial stresses of the order of 108-9 dyn/cm2 to (GaAs-(GaAl)As DH lasers in addition to the forward bias current, the development of <110> straight dark lines is observed in the electron beam induced junction current mode using an SEM. They are identified... (Read more)
- 26. J. Appl. Phys. 48, 3950 (1977) , “Defect structure of 100 dark lines in the active region of a rapidly degraded Ga1–xAlxAs LED”, Osamu Ueda, Shoji Isozumi, Tsuyoshi Kotani, and Toyoshi YamaokaThe 100 dark-line defects (DLD's) in the active region of a rapidly degraded Ga1xAlxAs LED were observed by transmission electron microscopy (TEM). Dislocation networks, which contain dislocation dipoles and a number of dislocation loops, were associated... (Read more)
- 27. IEEE J. Quantum Electron. QE-13, 564 (1977) , “The New Origin of Dark-Line Defects in Planar-Stripe DH Lasers”, HIDEO SAITO, TSUYOSHI KAWAKAMI
- 28. Appl. Phys. Lett. 30, 368 (1977) , “The origin of dislocation climb during laser operation”, S. O'Hara, P. W. Hutchinson, P. S. DobsonThe origin of the dislocation climb which takes place in the presence of electron-hole recombination in laser structuresis discussed. TEM studies on lasers which have been degraded by either forward bias or by optical pumping show that the climb dipoles are extrinsic in both cases. In addition,... (Read more)
- 29. Surf. Sci. 75, 681-688 (1978) , “EPR centres at a gas-solid interface induced by a microwave gas plasma”, B. P. Lemke and D. HanemanDetails are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O−3 were induced on the surfaces at 100 K. The powder... (Read more)
- 30. Solid State Commun. 25, 1113-1116 (1978) , “ESR assessment of 3d7 transition metal impurity states in GaP, GaAs and InP”, U. Kaufmann , J. SchneiderPhoto-sensitive electron spin resonance of the 3d7-ions Fe+, Co2+, Ni3+ has been detected and analysed in GaP, GaAs and InP. For GaP : Ni3+, hyperfine interaction with the four nearest P31-ligands could be resolved. (Read more)
- 31. Phys. Rev. B 17, 2081 (1978) , “ESR of the doubly ionized Cr acceptor and infrared luminescence of Cr in GaP:Cr”, U. Kaufmann and W. H. KoschelAfter optical excitation a broad isotropic electron-spin-resonance (ESR) signal with g=1.999 has been observed in chromium-doped GaP. It is attributed to an isolated Cr+ (3d5) center, presumably on a Ga site, which may be viewed as the doubly ionized Cr acceptor. The low-energy... (Read more)
- 32. J. Vac. Sci. Technol. 15, 1267 (1978) , “Wave functions and (110) surface structure of III–V compounds”, D. J. Miller and D. HanemanNew electron paramagnetic resonance determinations of the dangling orbital on Ga atoms on the cleavage surfaces of GaP are compared with corresponding data for GaAs and A1Sb. Using a bond-orbital approach the (110) surface structure for all three compounds is reconstructed, with the surface cation... (Read more)
- 33. Surf. Sci. 82, 102-108 (1979) , “Structure of IlI–V compound (110) surface regions from EPR data and elastic energy minimisation calculations”, D. J. Miller and D. HanemanThe structure of the first several layers of the (110) surfaces of GaAs, AlSb and GaP are obtained by two methods. In the first, electron paramagnetic resonance data is combined with bond orbital considerations to yield first layer reconstructions. In the second method, the surface energy is... (Read more)
- 34. Sov. Phys. Solid State 21, 1852 (1979) , “Nature of paramagnetic centers in iron-doped GaAs and GaP”, V. I. Kirillov , V. V. Teslenko
- 35. Solid State Commun. 32, 205-208 (1979) , “The origin of sharp near infrared transitions in chromium doped III–V semiconductors”, A. M. WhiteIt is contended that the sharp emission and absorption lines seen in GaAs:Cr and GaP:Cr at 0.839 eV and 1.029 eV are due to a type of excitonic recombination at isoelectronic sites involving chromium. This assignment contrasts strongly with the widely accepted model involving an internal d-d... (Read more)
- 36. Solid State Commun. 32, 399-401 (1979) , “Pulsed far-infrared spectroscopy of GaAs:Cr at high magnetic fields in the field-modulation mode”, R. J. Wagner and A. M. WhiteA magnetic field-modulation technique has been developed for sensitive far infrared electron paramagnetic resonance (EPR) spectroscopy on Cr2+ centers in GaAs. A hundred-fold improvement in signal-to-noise ratio relative to non-modulation techniques was obtained. The results of this experiment have... (Read more)
- 37. Phys. Rev. B 19, 1015 (1979) , “Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-doped AlxGa1-xAs”, D. V. Lang, R. A. Logan, M. JarosPhotocapacitance measurements have been used to determine the electron photoionization cross section of the centers responsible for persistent photoconductivity in Te-doped AlxGa1-xAs. The cross-section data, which have been obtained at various temperatures and for crystals of... (Read more)
- 38. Phys. Rev. B 20, 795 (1979) , “Effects of uniaxial stress and temperature variation on the Cr2+ center in GaAs”, J. J. Krebs and G. H. StaussThe effects both of applied uniaxial stress and of temperature variation on the EPR spectrum of Cr2+ in GaAs have been studied. The rapid stress-induced alignment of the Cr2+ centers at 4.2 K shows that the observed tetragonal symmetry is due to the Jahn-Teller effect as was... (Read more)
- 39. J. Appl. Phys. 50, 3721 (1979) , “Catastrophic damage of AlxGa1–xAs double-heterostructure laser material”, C. H. Henry, P. M. Petroff, R. A. Logan, and F. R. MerrittWe carry out a detailed study of catastrophic degradation (CD) in DH laser material from which we reach two conclusions. First, local melting occurs and is due to intense nonradiative recombination of minority carriers at a cleaved surface or at a defect. The minority carriers are generated by... (Read more)
- 40. J. Appl. Phys. 50, 5425 (1979) , “EPR investigations of the defect chemistry of semi-insulating GaAs : Cr”, A. Goltzené, G. Poiblaud, and C. SchwabThe effects of some heat treatments under various atmospheres (vacuum, As, Ga2O3, or H2) on GaAs : Cr samples have been investigated by EPR. The equilibria between the two valence states Cr + and Cr2 + seem to depend on various parameters such... (Read more)
- 41. J. Appl. Phys. 50, 6251 (1979) , “EPR determination of the concentration of chromium charge states in semi-insulating GaAs : Cr”, G. H. Stauss, J. J. Krebs, S. H. Lee, and E. M. SwiggardChromium can assume three different charge states in semi-insulating GaAs :Cr. An EPR-optical method is described which allows the Cr concentration in each of these states to be quantitatively determined. Typical results are given for a number of Cr-doped GaAs samples. Journal of Applied... (Read more)
- 42. J. Appl. Phys. 50, 6334 (1979) , “The sulfur-related trap in GaAs1–xPx”, R. A. Craven and D. FinnA systematic study has been made of the deep level introduced into GaAs1xPx alloy material by S doping. Conclusive documentation of the linear relationship between S concentration and the deep-level trap concentration is presented for x?0.4. The... (Read more)
- 43. J. Appl. Phys. 50, 6643 (1979) , “TEM observation of catastrophically degraded Ga1–xAlxAs double-heterostructure lasers”, Osamu Ueda, Hajime Imai, Tsuyoshi Kotani, Koichi Wakita, Hideho SaitoDefect structures of degraded GaAs/Ga1xAlxAs double-heterostructure (DH) lasers applied with pulsed current under high current density are studied by transmission electron microscopy. Several kinds of defects are observed corresponding to the 110 dark-line... (Read more)
- 44. J. Appl. Phys. 50, 765 (1979) , “Defect structure of degraded Ga1–xAlxAs double-heterostructure light-emitting diodes”, Osamu Ueda, Shoji Isozumi, Shigenobu Yamakoshi, and Tsuyoshi KotaniThe defect structure of degraded Ga1xAlxAs double-heterostructure (DH) light-emitting diodes (LED's) was investigated by electroluminescence (EL) topography and transmission electron microscopy (TEM). Two types of dark-line defects (DLD's), 100 DLD's and 110... (Read more)
- 45. Solid State Commun. 36, 15-17 (1980) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs , G. H. Stauss , A. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a submillimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g = 2.04 ± 0.01 at . The hyperfine interaction parameter | A | ([ = 3/2) is 0.090 ± 0.001 cm-1. The spectrum is attributed to the As... (Read more)
- 46. Solid State Commun. 36, 897-900 (1980) , “EPR measurements on chromium doped GaAs, GaP and InP”, N. K. Goswami, R. C. Newman and J. E. WhitehouseEPR measurements have been made on chromium doped GaAs samples at 4.2 K. An n-type sample doped with chromium and silicon was irradiated with 2 MeV electrons to lower the Fermi level. No resonance from substitutional Cr+ (3d5) was detected, although the Crs 2+ spectrum was observed. The generally... (Read more)
- 47. Phys. Rev. B 22, 2050 (1980) , “GaAs:Cr3+(3d3)an orthorhombic Jahn-Teller center with a stress-dependent reorientation rate”, G. H. Stauss and J. J. KrebsThe Cr3+(3d3) EPR center in GaAs has been investigated using controlled uniaxial stress at temperatures from 1.8 to 4.2 K. Stresses up to 1200 kg/cm2 were applied along the [001], [111], [110], and [112] axes. The rapidity of stress alignment of the distortions at... (Read more)
- 48. Phys. Rev. B 22, 3141 (1980) , “New EPR data and photoinduced changes in GaAs:Cr. Reinterpretation of the “second-acceptor” state as Cr4+”, G. H. Stauss, J. J. Krebs, S. H. Lee, and E. M. SwiggardSeveral samples with Fermi levels ranging from the valence to the conduction band show that the resonance previously attributed to Cr1+ is due to Cr4+, and no additional signal is observed under conditions where Cr1+ would be expected to exist. The double-acceptor... (Read more)
- 49. J. Appl. Phys. 51, 419 (1980) , “Optically induced transient electron paramagnetic resonance phenomena in GaAs:Cr”, A. M. White, J. J. Krebs, and G. H. StaussThe dynamics of EPR spectra of the charge states of Cr in GaAs during and following optical excitation are profoundly determined by the presence of other traps. Transients are slow, nonexponential, not thermally activated, and sample dependent. We show that the instability of Cr1 + and... (Read more)
- 50. Solid State Commun. 40, 285-289 (1981) , “Anion antisite defects in GaAs and GaP”, T. L. Reinecke and P. J. Lin-ChungThe electronic properties of anion antisite defects and the related ideal cation vacancies are calculated based on tight-binding Hamiltonians and using a novel recursion method. For the antisite defects symmetric A1 states are found in the upper part of the fundamental gaps, and for the ideal... (Read more)
- 51. Solid State Commun. 40, 473-477 (1981) , “The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR”, N. K. Goswami, R. C. Newman and J. E. WhitehouseN-type GaAs doped with sulphur (2.8 × 1018 cm-3) has been subjected to 2 MeV electron irradiation in stages at room temperature and examined by the EPR technique. When the free carrier absorption is first eliminated no EPR signal is detected. After further irradiation, the spectrum of the As... (Read more)
- 52. Phys. Rev. B 23, 3920 (1981) , “Charge transfer Cr3+(3d3)?Cr2+(3d4) in chromium-doped GaAs”, G. Martinez, A. M. Hennel, W. Szuszkiewicz, M. Balkanski, B. ClerjaudResults on the absorption and electron paramagnetic resonance measurements on chromium-doped GaAs are reported. For p-type samples the main optical transitions are shown to be due to a photoionization process which has been measured as a function of temperature and hydrostatic pressure. A model,... (Read more)
- 53. Phys. Rev. B 23, 5335 (1981) , “Deep-level optical spectroscopy in GaAs”, A. Chantre, G. Vincent, D. BoisAn experimental method which we call deep-level optical spectroscopy (DLOS) is described. It is based on photostimulated capacitance transients measurements after electrical, thermal, or optical excitation of the sample, i.e., a diode. This technique provides the spectral distribution of both... (Read more)
- 54. Appl. Phys. Lett. 39, 747 (1981) , “Optical assessment of the main electron trap in bulk semi-insulating GaAs”, G. M. MartinNear-infrared optical absorption in undoped bulk GaAs ingots is shown to be due essentially to the presence of the main deep donor EL2. Measurement of the corresponding absorption represents the first known method of quantitative determination of that level in semi-insulating material. Furthermore,... (Read more)
- 55. Solid State Commun. 44, 285-286 (1982) , “Neutron-transmutation doping of GaAs — as studied by ESR”, J. Schneider and U. Kaufmann.Neutron (n0) transmutation doping of GaAs has been monitored by electron spin resonance (ESR). Strong evidence was obtained that, apart from fast neutron impact, AsGa antisite defects are also created by the γ- and β-emissions following thermal n0-capture. The AsGa defects, forming deep... (Read more)
- 56. Solid State Commun. 44, 369-372 (1982) , “Electronic structure calculation of Mn-doped GaAs”, Arnaldo Dal Pino, Jr. Adalberto Fazzio and JoséR. LeiteThe molecular cluster model, within the framework of the self-consistent field multiple scattering Xα method, is applied to calculate the electronic structure of a Mn substitutional impurity in GaAs. The charge states Mn3+, with spin configurations S = 0 and 2, and Mn2+, with S = 5/2, were... (Read more)
- 57. Phys. Rev. Lett. 49, 1728 (1982) , “Positive Identification of the Cr4+ → Cr3+ Thermal Transition in GaAs”, D. C. Look, S. Chaudhuri, L. EavesTemperature-dependent Hall-effect measurements on two Cr-doped GaAs samples show a dominant center at E1=0.324-1.4×10-4T eV, with respect to the valence-band edge. By comparison with secondary-ion mass spectroscopy measurements of the Cr concentration, and recent EPR... (Read more)
- 58. Phys. Rev. B 25, 7731 (1982) , “Electron paramagnetic resonance parameters of substitutional Cr2+ impurity in GaAs by a cluster approach”, M. H. de A. Viccaro, S. Sundaram, and R. R. SharmaA cluster treatment incorporating Jahn-Teller distortion and covalency effects has been given for a substitutional Cr2+ impurity in GaAs to interpret the g factors and zero-field splitting parameters. Significant charge-transfer effects have been found to be present in this system. The g... (Read more)
- 59. Phys. Rev. B 26, 2296 (1982) , “Confirmation of the EPR identification of Cr4+ 3d2 in p-type Cr-doped GaAs by means of applied uniaxial stress”, J. J. Krebs and G. H. StaussUniaxial stress has been used to study the isotropic Cr-related EPR center in p-type GaAs: Cr. Stress linearly splits the EPR line into two components, showing that the center is due to substitutional Cr4+ 3d2 rather than interstitial Cr1+ 3d5. The stress... (Read more)
- 60. Nucl. Instrum. Methods Phys. Res. 199, 61-73 (1982) , “Comparison of nuclear and optical methods in the study of amorphized semiconductors and insulators”, Gerhard GötzThe damage and amorphization of implanted silicon is reported. The results of backscattering measurements (RBS) are presented and compared with results of optical measurements and EPR investigations. At low implantation temperatures the amount and depth distribution of the damage can be described by... (Read more)
- 61. J. Appl. Phys. 53, 4541 (1982) , “Electron paramagnetic resonance of extended defects in semi-insulating GaAs”, A. Goltzene, B. Meyer, and C. SchwabThe temperature dependence, over the 4.2100 K range, of the narrow EPR line, labeled X, with an isotropic value of g = 2.002 has been investigated in a semi-insulating GaAs:Cr sample. From its Curie-Weiss behavior, leading to a (T+13.1)1 law, it is... (Read more)
- 62. J. Appl. Phys. 53, 6140 (1982) , “Identification of AsGa antisites in plastically deformed GaAs”, E. R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider, T. WosinskiAsGa antisite defects formed during plastic deformation of GaAs are identified by electron paramagnetic resonance (EPR) measurements. From photo-EPR results it can be concluded that the two levels of this double donor are located near Ec 0.75 eV and... (Read more)
- 63. Appl. Phys. Lett. 40, 342 (1982) , “Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors”, J. Lagowski, H. C. Gatos, J. M. Parsey, K. Wada, M. Kaminska, and W. WalukiewiczThe concentration of the major electron trap (0.82 eV below the conduction band) in GaAs (Bridgman grown) was found to increase with increasing As pressure during growth. It was further found that (for a given As pressure) the concentration of this trap decreased with increasing concentration of... (Read more)
- 64. Sov. Phys. Semicond. 17, 412 (1983) , “Excited states of the Fe3+ ion in gallium arsenide and phosphide”, E. S. Demidov, A. A. Ezhevski?, and V. V. Karzanov.
- 65. Sov. Phys. Semicond. 17, 796 (1983) , “Investigation of structure defects in the GaAs:Mn system by the ESR method”, V. F. Masterov, S. B. Mikhrin, B. E. Samorukov, K. F. Shtel'makh
- 66. Physica B+C 116, 564-569 (1983) , “Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements”, K. Murakami, K. Masuda, Y. Aoyagi and S. NambaExperimental tests of non-thermal effect for pulsed laser annealing (PLA) of semiconductors have been done by means of two techniques. One is time-resolved reflectivity measurement during single 30-ps PLA of amorphous GaAs. An anomalous dynamic behavior is observed at an energy-density window, i.e.,... (Read more)
- 67. Phys. Rev. Lett. 51, 130 (1983) , “Electron Spin Resonance on GaAs-AlxGa1-xAs Heterostructures”, D. Stein, K. v. Klitzing, G. WeimannPhotoconductivity measurements on GaAs-AlxGa1-xAs heterostructures with photon energies 0.05 meV<hν<0.14 meV show resonance structures with a half-width of less than 0.002 meV in the magnetic field range 3 T<B<8 T. The resonances are only observed at magnetic... (Read more)
- 68. J. Appl. Phys. 54, 161 (1983) , “Quantitative measurements of recombination enhanced dislocation glide in gallium arsenide”, Koji Maeda, Miwa Sato, Akihisa Kubo, and Shin TakeuchiEffects of 30-keV electron-beam irradiation on dislocation glide were investigated for - and -dislocations in bulk n-GaAs single crystals by cathodoluminescence microscopy using a scanning electron microscope with a bending apparatus in it. At high temperatures above... (Read more)
- 69. IEEE Transactions on Electron Devices ED-30, 321 (1983) , “Positive Feedback Model of Defect Formation in Gradually Degraded GaAlAs Light Emitting Devices”, KAZUO KONDO, OSAMU UEDA, SHOJI ISOZUMI, SHIGENOBU YAMAKOSHI, KENZO AKITA, TSUYOSHI KOTANI
- 70. Sov. Phys. Semicond. 18, 162 (1984) , “Problem of the charge state of manganese impurities in GaAs:Mn”, D. G. Andrianov, Yu. A. Grigor'ev, S. O. Klimonski?, A. S. Savel'ev, S. M. Yakubenya
- 71. Sov. Phys. Semicond. 18, 49 (1984) , “Influence of rare-earth elements on the carrier mobility in epitaxial InP and InGaAs films”, N. T. Bagraev, L. S. Vlasenko, K. A. Gatsoev, A. T. Gorelenok, A. V. Kamanin, V. V. Mamutin, B. V. Pushny, V. K. Tibilov, Yu. P. Tolparov, A. E. Shubin
- 72. Phys. Rev. Lett. 52, 851 (1984) , “Optical Properties of As-Antisite and EL2 Defects in GaAs”, B. K. Meyer, J.-M. Spaeth, M. SchefflerThis Letter reports the first application of an ESR-tagged magnetic circular dichroism measurement to a paramagnetic deep-level defect in a semiconductor. In semi-insulating GaAs two new absorption bands are found at 1.05 and 1.29 eV. Both bands are identified as intracenter electronic transitions... (Read more)
- 73. Phys. Rev. Lett. 53, 1187 (1984) , “Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAs”, D. M. Hofmann, B. K. Meyer, F. Lohse, and J. -M. SpaethThis Letter reports on the first optically detected electron-nuclear double-resonance (ENDOR) measurements of a paramagnetic semiconductor defect in which ligand hyperfine interactions could be resolved. In semi-insulating GaAs: Cr the ENDOR lines of the first-shell 75As neighbors of the... (Read more)
- 74. Phys. Rev. B 30, 931 (1984) , “Optical-pumping study of spin-dependent recombination in GaAs”, Daniel PagetOptical-pumping techniques provide a convenient way to study-dependent recombination (SDR) processes at deep impurity centers in semiconductors. Indeed, by changing the polarization of excitation light, it is possible to modify the photoelectron spin polarization in a controlled way. This produces a... (Read more)
- 75. Nucl. Instrum. Methods Phys. Res. B 1, 427-430 (1984) , “Fast neutron damage in tetrahedral ANB8−N Compounds: Effects of ionicity”, A. Goltzene, B. Meyer , C. SchwabIrradiation of crystals with neutrons of high energy leads to the formation of different types of defects, such as point defects or extended defects, like clusters or even amorphous regions in the displacement spike. Their nature and their creation yields depend on the chemical nature of the... (Read more)
- 76. Jpn. J. Appl. Phys. 23, 1594 (1984) , “DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy”, Masami Tachikawa, Masashi Mizuta, Hiroshi KukimotoDeep levels, the so-called DX centers, in the AlxGa1-xAs alloy system grown by liquid-phase epitaxy (LPE) were investigated by junction-capacitance spectroscopy. The dependence of the activation energy of the DX center in Sn-doped... (Read more)
- 77. J. Non-Cryst. Solids 66, 133-138 (1984) , “Local order and defects in MBE-grown a-GaAs”, S. G. Greenbaum, D. J. Treacy, B. V. Shanabrook, J. Comas and S. G. BishopElectron spin resonance (ESR), and 71Ga and 75As nuclear magnetic resonance (NMR) measurements have been performed on a 20μ thick film of a-GaAs deposited on a SiO2 substrate by molecular beam epitaxy. The ESR spectrum exhibits the four-line S=1/2, I=3/2 hyperfine pattern characteristic of the... (Read more)
- 78. J. Appl. Phys. 56, 2655 (1984) , “Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materials”, G. M. Martin, E. Estève, P. Langlade, and S. Makram-EbeidFast neutron irradiation of n-GaAs mainly induces two deep electron traps in the band gap. The first of these is referred to as EL6 and has an energy level at Ec 0.35 eV, where Ec is the conduction band minimum; the second one has a wide... (Read more)
- 79. J. Appl. Phys. 56, 3394 (1984) , “Electron paramagnetic resonance spectroscopy of fast neutron-generated defects in GaAs”, A. Goltzene, B. Meyer, C. Schwab, S. G. Greenbaum, R. J. Wagner, T. A. KennedyA series of fast neutron-irradiated GaAs samples (neutron fluence range of 2×10152.5×1017 cm2) has been investigated by electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra at 9 GHz exhibit a broad (~1 kG) Lorentzian singlet at... (Read more)
- 80. Appl. Phys. Lett. 44, 907 (1984) , “Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs”, K. Elliott, R. T. Chen, S. G. Greenbaum, R. J. WagnerWe have identified the electron paramagnetic resonance (EPR) spectrum of the As on a Ga site (AsGa) defect in bulk undoped liquid encapsulated Czochralski grown GaAs. The intensity of the EPR signal can be correlated with the concentration of compensating carbon acceptors in the GaAs... (Read more)
- 81. Rev. Sci. Instrum. 56, 2050 (1985) , “Application of a microwave preamplifier to an ESR spectrometer”, Günter GramppThe aim of this investigation was to measure the sensitivity improvement reached on a commercial homodyne X-band ESR spectrometer by installing a microwave GaAsFET type preamplifier (8.59.6 GHz). Up to a power level of 1 mW a factor of 3 was obtained in signal improvement.... (Read more)
- 82. Phys. Rev. Lett. 55, 2204 (1985) , “Identification of the 0.82-eV Electron Trap, EL2 in GaAs, as an Isolated Antisite Arsenic Defect”, M. Kami?ska, M. Skowro?ski, W. KuszkoEL2 is a technologically important deep level in GaAs whose identification has been the subject of intense study. In this paper we present uniaxial stress and magnetic field experiments which establish for the first time that EL2 has tetrahedral symmetry and is, therefore, an isolated point defect.... (Read more)
- 83. Phys. Rev. Lett. 55, 2340 (1985) , “Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of EL2?”, G. A. Baraff and M. SchluterWe have used the Green's-function technique to carry out electronic-structure and total-energy calculations for the gallium vacancy in GaAs and for the nearest-neighbor (arsenic vacancy)-(arsenic antisite) pair which results when an adjacent arsenic atom hops over and fills the gallium vacancy. The... (Read more)
- 84. Phys. Rev. B 32, 6965 (1985) , “Reduced g factor subband Landau levels in AlGaAs/GaAs heterosructures”, G. Lommer, F. Malcher, and U. RösslerThe reduction of the g factor of subband Landau levels in the n-inversion channel of AlGaAs/GaAs heterostructures, which has been observed in electron-spin-resonance experiments by Stein, von Klitzing, and Weimann [Phys. Rev. Lett. 51, 130 (1983)], can be explained quantitatively by the taking into... (Read more)
- 85. Jpn. J. Appl. Phys. 24, L143 (1985) , “Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System”, Masashi Mizuta, Masami Tachikawa, Hiroshi Kukimoto, Shigeru MinomuraAn experimental result that the DX center appears in GaAs:Si and GaAsd:Sn under hydrostatic pressure of about 30 kbars has been obtained for the first time. This indicates clearly that the DX center in the AlGaAs alloy system is due to a substitutional donor itself (not a complex referred to as... (Read more)
- 86. J. Appl. Phys. 24, L689 (1985) , “Photo-Electron Paramagnetic Resonance Study of AsGa Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry”, Noriaki Tsukada, Toshio Kikuta, Koichi IshidaThe photoresponses of the antisite defect AsGa+ electron paramagnetic resonance signal have been investigated in as-grown, undoped, semi-insulating GaAs crystals grown from melts of different As atoms fractions. The observed photoresponses are well explained by assumting... (Read more)
- 87. J. Appl. Phys. 57, 1523 (1985) , “Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers”, Osamu Ueda, Kiyohide Wakao, Akio Yamaguchi, Shoji Isozumi, and Satoshi KomiyaRapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photoluminescence topography and transmission electron microscopy. 100" align="middle">-dark-line defects and 110" align="middle">-dark-line defects... (Read more)
- 88. J. Appl. Phys. 58, 2448 (1985) , “Thermal strain-induced degradation mechanism in the visible AlGaAs/GaAs laser”, M. Ikeda, O. Ueda, S. Komiya, and I. UmebuWe fabricated and life-tested visible AlGaAs/GaAs channeled-substrate-planar-type lasers and found that some are degraded within 100 h of operation. We investigated these using photoluminescence and transmission electron microscopic images. The characteristic features in photoluminescence images are... (Read more)
- 89. J. Appl. Phys. 58, 3996 (1985) , “Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy”, Osamu Ueda, Kiyohide Wakao, Satoshi Komiya, Akio Yamaguchi, Shoji Isozumi, and Itsuo UmebuCatastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray... (Read more)
- 90. Appl. Phys. Lett. 46, 781 (1985) , “Photoresponse of the AsGa antisite defect in as-grown GaAs”, M. Baeumler, U. Kaufmann, and J. WindscheifThe photoresponse of the As + Ga" align="middle"> antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown semi-insulating GaAs as a function of illumination time and photon energy h. The As + Ga" align="middle"> EPR signal intensity... (Read more)
- 91. Appl. Phys. Lett. 47, 970 (1985) , “Identification of EL2 in GaAs”, H. J. von Bardeleben, D. Stievenard, J. C. Bourgoin, A. HuberCombining electron paramagnetic resonance under optical excitation, deep level transient spectroscopy, electron irradiation, annealing, and quenching on LEC semi-insulating GaAs and lightly Si-doped material grown in the same way as the semi-insulating material, we have shown that (i) the irradiated... (Read more)
- 92. Superlatt. Microstruct. 2, 273-278 (1986) , “Electron states in GaAs/Ga1−xAlxAs heterostructures: Subband Landau-levels*1”, G. Lommer, F. Malcher and U. RsslerNonparabolicities (3,4) of the bulk band structure are taken into account in the calculation of subband Landau-levels in the n-inversion layer of GaAs/Ga1−xAlxAs heterostructures. We calculate the deviation of the cyclotron mass from the isotropic parabolic band case (2) for magnetic fields... (Read more)
- 93. Solid State Commun. 60, 867-870 (1986) , “Antisite defects in plastically-deformed GaAs: An alternative analysis”, R. BrayA revision is presented of the accepted view that the observed increease in electron paramagnetic resonance (EPR) with plastic deformation in GaAs is due to the generation of As antisite defects. It is proposed instead that only compensating deep acceptor defects are generated. The increase of the... (Read more)
- 94. Solid State Commun. 60, 871-872 (1986) , “The formation of arsenic antisite defects during plastic deformation of GaAs”, E. R. WeberThe electron paramagnetic resonance (EPR) signal of arsenic antisite defects increases after plastic deformation of GaAs. This has been attributed in the preceeding paper to the formation of only compensating acceptors rather than additional antisites. A critical discussion of this alternative model... (Read more)
- 95. Phys. Rev. B 33, 2890 (1986) , “Identification of the arsenic vacancy defect in electron-irradiated GaAs”, H. J. von Bardeleben and J. C. BourgoinWe report the systematic observation of a new electron-paramagnetic-resonance spectrum in a wide series of electron-irradiated GaAs crystals. The spectrum consists of a partially resolved multiplet of 700-G linewidth and an effective g factor of 2.00 for B∥[001] and 2.04 for B∥[110]. Comparison... (Read more)
- 96. Phys. Rev. B 33, 4320 (1986) , “DX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAs”, Atsushi Oshiyama, Shuhei OhnishiA new microscopic model for the origin of the DX center in Si-doped AlxGa1-xAs is proposed based on discrete variational X? cluster calculations. The calculated level structure shows that the antibonding A1 state of Si, which lies in the conduction bands as a... (Read more)
- 97. Phys. Rev. B 33, 5880 (1986) , “Antisite-related defects in plastically deformed GaAs”, P. Omling, E. R. Weber, L. SamuelsonOptical absorption measurements on plastically deformed GaAs show that the total extrinsic absorption increases with deformation, while the quenchable EL2 absorption stays constant. The nonquenchable extrinsic absorption is observed to be proportional to the EPR measured AsGa containing... (Read more)
- 98. Phys. Rev. B 34, 1360 (1986) , “Identification of the arsenic-antisite-arsenic-vacancy complex in electron-irradiated GaAs”, H. J. von Bardeleben, J. C. Bourgoin, and A. MiretWe report the observation by electron paramagnetic resonance of a new irradiation-induced defect in n-type GaAs. It is characterized by the spin Hamiltonian parameters S=1 / 2, g=1.97±0.06, A=0.068±0.004 cm-1, I=3 / 2 (100%) and attributed to the complex formed by an... (Read more)
- 99. Phys. Rev. B 34, 7192 (1986) , “Identification of a defect in a semiconductor: EL2 in GaAs”, H. J. von Bardeleben, D. Stivenard, D. Deresmes, A. Huber, J. C. BourgoinWe present here a complete set of experimental results, obtained by electron paramagnetic resonance (EPR) and deep-level transient spectroscopy (DLTS), on the so-called EL2 defect in GaAs. It is obtained on semi-insulating materials and specially doped materials grown as semi-insulating ones, which... (Read more)
- 100. Appl. Phys. Lett. 48, 1282 (1986) , “Photoresponse of the EL2 absorption in undoped semi-insulating GaAs”, B. Dischler, F. Fuchs, and U. KaufmannThe response of the EL2 absorption band to monochromatic secondary illumination has been studied in undoped semi-insulating GaAs. Photoinduced changes of the absorption band are spectrally nonuniform. In... (Read more)
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