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- 81. Nucl. Instrum. Methods Phys. Res. A 395, 76-80 (1997) , “Optical deep-level transient characterisation of gamma-irradiated semi-insulating gallium arsenide”, Say Teng Lai, Dimitri Alexiev, Claude Schwab , Ian DonnellyA unique optical deep-level transient conductance spectroscopy (ODLTCS) technique has been employed for studying undoped semi-insulating (SI) GaAs material. In the undoped SI GaAs, the Fermi-level first shifts towards gamma irradiation of the conduction band at low γ fluence and then towards... (Read more)
- 82. Phys. Rev. B 56, 7422 (1997) , “High-field spin resonance of weakly bound electrons in GaAs”, M. Seck, M. Potemski, and P. WyderElectron spin resonance (ESR) of shallow donor electrons in n-type GaAs has been observed by means of direct detection of microwave absorption at magnetic fields of 6–11 T. The ESR structure is smeared out over a magnetic field range of up to 1 T. The line shape is strongly asymmetric and depends... (Read more)
- 83. Phys. Rev. B 56, 10221 (1997) , “Optically detected electron-paramagnetic-resonance investigations of the substitutional oxygen defect in gallium arsenide”, F. K. Koschnick, M. Linde, M. V. B. Pinheiro, and J.-M. SpaethThe substitutional oxygen defect in GaAs has been investigated with magnetic circular dichroism of the absorption, optically detected electron paramagnetic resonance, and optically detected electron-nuclear double resonance (ODENDOR). The ODENDOR spectra can be explained with an oxygen atom... (Read more)
- 84. Rev. Sci. Instrum. 68, 2511 (1997) , “Sensitivity enhancement in magnetic circular dichroism of absorption-detected electron paramagnetic resonance with a mirror cavity”, F. K. KoschnickA mirror cavity was developed to improve the signal to noise (S/N) ratio of the measurement of the magnetic circular dichroism of the absorption (MCDA) and of the MCDA-detected electron paramagnetic resonance (EPR). In this cavity the measurement light beam passes through the sample several times... (Read more)
- 85. Solid State Commun. 102, 715-720 (1997) , “Nuclear spin relaxation in AlGaAs/GaAs heterostructures observed via optically detected magnetic resonance (ODMR) experiments”, M. Schreiner, H. Pascher, G. Denninger, S. A. Studenikin, G. Weimann and R. LöschThe resonant field at which an electron spin resonance (ESR) occurs may be shifted by an effective magnetic field, which is due to spin polarized nuclei. This shift, known as Overhausershift, is caused by the field of all polarized nuclei without respect to their isotopic number. Irradiation of the... (Read more)
- 86. Solid State Commun. 101, 219-223 (1997) , “Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property”, Y. J. Park, T. H. Yeom, I. -W. Park, S. H. Choh , S. -K. MinThe dependences of Cr2+ and Cr3+ electron paramagnetic resonance (EPR) signals as a function of Cr concentration have been investigated in conjunction with clarifying the atomic configuration for obtaining semi-insulating properties in a vertical gradient freeze (VGF)-GaAs single crystal codoped... (Read more)
- 87. Mater. Sci. Eng. B 42, 213-216 (1996) , “Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients”, P. Kamiński, R. Ćwirko, M. Palczewska and R. KozłowskiA new digital approach to PICTS technique was applied to study deep levels in undoped SI GaAs and Fe-doped InP. For SI Fe-doped InP, the 0.64-eV trap related to Fe2 + /Fe3 + acceptor level as well as the 0.53-eV trap attributed to a native defect, were observed. For SI undoped GaAs, three traps: T1... (Read more)
- 88. Phys. Rev. B 54, 10508 (1996) , “Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study”, J. Kreissl, W. Ulrici, M. El-Metoui, A.-M. Vasson, A. Vasson, A. GavaixIn order to clarify the nature of the neutral Mn acceptor in GaP, we have carried out optical-absorption and electron-paramagnetic-resonance (EPR) experiments using both conventional and thermally detected EPR on semi-insulating GaP:Mn. In thermal equilibrium at low temperatures, all the manganese... (Read more)
- 89. Proc. SPIE 2780, 133-136 (1996) , “Digital analysis of photo-induced current transients in semi-insulating GaAs and InP”, Pawel Kaminski, Michal Pawlowski, Robert Cwirko, M. Palczewska, Roman KozlowskiDigital PITS technique was applied to study deep-level defects in semi-insulating GaAs and InP. The studies were completed by measurements of ESR spectra on the same wafers.... (Read more)
- 90. Prog. Surf. Sci. 51, 263-408 (1996) , “Scanning tunneling microscopy study of fullerenes”, T. Sakurai, X. -D. Wang, Q. K. Xue, Y. Hasegawa, T. Hashizume and H. ShinoharaScanning tunneling microscopy investigations of adsorption and film growth of various fullerenes on semiconductor and metal surfaces are reviewed. The fullerenes being studied are C60, C70, C84, Sc@C82 and Y@C82 and the substrates being used for adsorption are Si (111), Si (100), Ge (111), GaAs... (Read more)
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