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- 71. Physica E 6, 798-801 (2000) , “An experimental and theoretical study of the electron spin resonance mechanism in AlGaAs/GaAs”, R. Meisels, F. Kuchar and M. KriechbaumThe electron spin resonance (ESR) of the 2DES in AlGaAs/GaAs is investigated at millimeterwave frequencies and is shown to be dominantly a magnetic dipole transition. Strain-induced contributions to the electric dipole transition rate can be neglected. The origin of the change of the resistance due... (Read more)
- 72. J. Magn. Reson. 136, 207-210 (1999) , “A Cryogenically Coolable Microwave Limiter”, George A. Rinard, Richard W. Quine , Gareth R. EatonA microwave (ca. 3 GHz) limiter, constructed using a GaAs PIN diode and microstrip impedance transformation circuit, limited 300-ns long 11-W microwave pulses to 70 mW at ca. 4.2 K. This limiter was implemented in a pulsed electron paramagnetic resonance (EPR) spectrometer to protect a low-noise microwave preamplifier from the high-power pulses. (Read more)
- 73. Jpn. J. Appl. Phys. 37, 1939-1944 (1999) , “Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs”, T. Shinagawa, T. OkumuraHydrogen-related metastable defects (M3/M4) in n-GaAs were studied in relation to the EL2 center. We found that the M3/M4 defects were observed only in the crystals containing the EL2 center in the as-grown state after exposure to a hydrogen plasma. The EL3 level, which was tentatively assigned as... (Read more)
- 74. Mater. Res. Soc. Symp. Proc. 573, 107 (1999) , “ELECTRICAL AND OPTICAL STUDY OF CHARGE TRAPS AT PASSIVATED GaAs SURFACES”, Y. Mochizuki
- 75. Phys. Rev. B 60, 8304 (1999) , “Mn impurity in Ga1-xMnxAs epilayers”, J. Szczytko, A. Twardowski, K. ?wi?tek, M. Palczewska, M. Tanaka, T. Hayashi, K. AndoElectron paramagnetic resonance was measured in Ga1-xMnxAs/GaAs epilayers with 0.002<~x<~0.01. Data were taken as a function of magnetic field orientation at low temperatures. The observed spectra were attributed to ionized Mn acceptor A-. No neutral Mn... (Read more)
- 76. Physica B 273-274, 7-14 (1999) , “Self-interstitials in semiconductors: what we are learning from interstitial Zn in ZnSe”, G. D. Watkins , K. H. ChowInterstitial Zn+i has been observed in ZnSe by optical detection of EPR to be on-center in either Td interstitial site – that surrounded by four Se atoms, (Zni)+Se, or by four Zn atoms, (Zni)+Zn. This can be understood by a simple universal model which predicts stability for an interstitial... (Read more)
- 77. Solid State Commun. 110, 593-598 (1999) , “Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulating GaAs”, S. A. Goodman, F. K. Koschnick, Ch. Weber, J. -M. Spaeth and F. D. AuretThe defects introduced in a bulk semi-insulating (SI) GaAs by a 6-MeV proton irradiation at 300 K were investigated with the electron paramagnetic resonance (EPR) detected via the magnetic circular dichroism of the optical absorption. EL2 defects (EL20 and EL2+) are introduced by proton irradiation... (Read more)
- 78. J. Appl. Phys. 84, 6782 (1998) , “Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition”, T. Ishiyama, E. Katayama, K. Murakami, K. Takahei, A. TaguchiWe have performed electron spin resonance (ESR) measurements on Er-doped GaAs grown with oxygen codoping by metal organic chemical vapor deposition. An isotropic line (an effective g value, g = 5.95) which had been already reported was observed in samples without oxygen codoping. On... (Read more)
- 79. Phys. Rev. B 58, 7707 (1998) , “Optically detected magnetic resonance study of an arsenic-antisite–arsenic-vacancy complex in GaAs”, F. K. Koschnick, K.-H. Wietzke, and J.-M. SpaethAn arsenic-antisite-related defect produced in n-type GaAs by 2 MeV electron irradiation was investigated using magnetic circular dichroism of the optical absorption (MCDA), MCDA-detected electron paramagnetic resonance (MCDA-EPR), and MCDA-detected electron-nuclear double resonance (MCDA-ENDOR). In... (Read more)
- 80. J. Cryst. Growth 174, 751-756 (1997) , “Investigation of the interfacial quality and the influence of different substrates in ZnSe homoepitaxy”, H. Wenisch, T. Behr, J. Kreissl, K. Schüll, D. Siche, H. Hartmann , D. HommelZnSe substrates grown by the seeded chemical vapour transport and recrystallization as well as by the Bridgman method are compared for their use in molecular beam epitaxy. Intrinsic and extrinsic defects were analysed by low-temperature photoluminescence and especially by... (Read more)
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