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- 51. Phys. Rev. B 67, 165325 (2003) , “Temperature dependence and mechanism of electrically detected ESR at the v=1 filling factor of a two-dimensional electron system”, Eugene Olshanetsky, Joshua D. Caldwell, Manyam Pilla, Shu-chen Liu, Clifford R. Bowers, Jerry A. Simmons, John L. RenoElectrically detected electron spin resonance (EDESR) signals were acquired as a function of temperature in the 0.34.2 K temperature range in an AlGaAs/GaAs multiple-quantum-well sample at the = 1 filling factor at 5.7 T. In the particular sample studied, the linewidth is approximately... (Read more)
- 52. Physica B 340, 362 (2003) , Elsevier , “Deep levels in rhodium-doped p-type MOCVD GaAs ”, A. Majid, M. Zafar Iqbal, A. Dadgar, D. Bimbergp-type GaAs epilayers grown by metal-organic chemical vapour deposition (MOCVD) technique, doped in situ with rhodium (Rh) impurity, have been studied by deep level transient spectroscopy (DLTS). A composite peak consisting of emission signals from at least two deep levels in the lower-half band gap is identified with Rh. This peak is resolved using double-correlation DLTS (DDLTS) measurements, providing the clear energy positions of the Rh-related deep levels as Ev+0.35 eV and Ev+0.51 eV. Emission rate signatures and other parameters are reported for these deep levels. They are observed to show electric-field dependent emission signatures. No significant minority carrier (electron) deep level could be clearly identified with Rh due to the presence of significant inadvertent features in the injection DLTS spectrum. Results are compared with our earlier study of Rh-doped, n-type, MOCVD GaAs. (Read more)
- 53. Physica B 340, 358 (2003) , “Osmium related deep levels in n-type GaAs ”, M. Zafar Iqbal, A. Majid, A. Dadgar, D. BimbergDeep levels due to 5d transition metal, osmium (Os), in n-type GaAs epitaxial layers grown by metal-organic vapour-phase epitaxy are investigated using deep level transient spectroscopy (DLTS). Two clear and prominent peaks are observed in majority carrier (electron) emission spectra in GaAs:Os samples in addition to a weaker, broad feature at higher temperatures, which are absent in the Os-free, reference samples. The well-resolved, prominent peaks are attributed to deep levels associated with Os impurity having activation energies Ec−0.28 eV and Ec−0.41 eV at a junction electric field of not, vert, similar1.4×105 V/cm. Both of these peaks are found to be field dependent. Detailed data on emission rate signatures, apparent electron capture cross-sections and defect concentrations are reported for these levels. No Os-related deep level peaks could be clearly delineated in minority-carrier injection DLTS, at this stage, although some evidence is found for a low-energy deep level band. (Read more)
- 54. Physica E 17, 320-321 (2003) , “Temperature dependence of electrically detected ESR at filling factor ν=1 in a 2DEG”, Eugene Olshanetsky, Manyam Pilla, Joshua D. Caldwell, Clifford R. Bowers, Jerry A. Simmons and John L. RenoElectrically detected electron spin resonance (ESR) was measured as a function of temperature for 0.3–4.2 K in a AlGaAs/GaAs multiple quantum well sample at filling factor ν=1. The ESR amplitude exhibits a maximum at about 2.2 K and vanishes with increased or decreased temperature. To... (Read more)
- 55. Polyhedron 22, 225-233 (2003) , “Study on guanidino–carboxylate interactions in copper(II) ternary complexes of guanidinoacetic acid with glutamic and aspartic acids”, Jussara Lopes de Miranda and Judith FelcmanThe possibility of occurrence of biological relevant guanidino–carboxylate interactions was investigated in ternary systems involving guanidinoacetic (Gaa) and glutamic acid (Glu), aspartic acid (Asp) or glycine (Gly). The study was done in solution using potentiometry, ultraviolet visible... (Read more)
- 56. Semiconductors 37, 918 (2003) , “The Relaxation of the Neutral State of Manganese in Gallium Arsenide”, V. F. Masterov, K. F. Shtel'makh, V. P. Maslov, S. B. Mikhrin, B. E. SamorukovResults of investigations of the longitudinal magnetic relaxation of the neutral state of the Mn0 center in GaAs are presented. Relaxation mechanisms were determined from the broadening of the electron-spinresonance line in the temperature range of 3.4–8.2 K and from the variation in the nuclear relaxation rate in the range of 36–310 K. The nuclear relaxation investigation demonstrates that the electron relaxation is governed by the interaction between lattice vibrations and local vibrations of the center. This allows one to represent the electron relaxation at low temperatures as the consequence of anharmonicity of local vibrations of the electron dipole moment of the Mn0 center. (Read more)
- 57. Semiconductors 37, 872 (2003) , “ESR of Interacting Manganese Centers in Gallium Arsenide”, K. F. Shtel'makh, M. P. Korobkov, I. G. OzerovESR of Mn-doped GaAs is studied. The results indicate the presence of an interstitial impurity state in GaAs:Mn which is involved in the Coulomb interaction with the substitutional Mn states. Analysis of the temperature variations of ESR spectra and the values of the g factor shows that the interstitial center has a d5 electron configuration. The substitutional Mn create a strong random crystal field at the interstitial Mn ion. The results can be explained by assuming the existence of a nonzero dipole moment in the neutral state of Mn. (Read more)
- 58. Phys. Rev. B 66, 45201 (2002) , “Single ion anisotropy of Mn-doped GaAs measured by electron paramagnetic resonance”, O. M. Fedorych, E. M. Hankiewicz, Z. Wilamowski, J. SadowskiAn electron-paramagnetic-resonance (EPR) study of molecular-beam-epitaxy-grown Mn-doped GaAs is presented. The resolved fine structure in insulating Ga1-xMnxAs allows us to evaluate the crystal-field parameters of the spin Hamiltonian. The exchange narrowing of the structure,... (Read more)
- 59. Phys. Rev. B 64, 41307 (2001) , “Gate-controlled electron spin resonance in GaAs/AlxGa1-xAs heterostructures”, H. W. Jiang, Eli YablonovitchThe electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that... (Read more)
- 60. Phys. Rev. B 64, 201308 (2001) , “Magnetic-field pinning of a dynamic electron-spin-resonance line in a GaAs/AlxGa1-xAs heterostructure”, Chris Hillman, H. W. JiangElectrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under microwave and radio-frequency double excitations, we have observed that the ESR line can be... (Read more)
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