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- 11. Appl. Phys. Lett. 89, 231901 (2006) , “Cathodoluminescence investigations of GaInNAs on GaAs(111)B”, J. Miguel-Sánchez, U. Jahn, A. Guzmán, and E. MuñozIn this work, we present a detailed cathodoluminescence characterization of GaInNAs quantum wells grown on GaAs(111)B. As-grown and annealed InGaAs and GaInNAs quantum wells were maeasured and compared by spatially resolved cathodoluminescence at different photon energies. In the case of... (Read more)
- 12. Appl. Phys. Lett. 89, 152910 (2006) , “Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment”, Hong-Liang Lu, Liang Sun, Shi-Jin Ding, Min Xu, David Wei Zhang, and Li-Kang WangAl2O3 thin films were deposited by atomic layer deposition on HF-cleaned and NH3 plasma-treated GaAs surfaces, respectively. The precursors used for Al2O3 films are trimethylaluminum and water. Effects of NH3 plasma pretreatment on... (Read more)
- 13. Appl. Phys. Lett. 89, 092103 (2006) , “Electron energy barriers at interfaces of GaAs(100) with LaAlO3 and Gd2O3”, V. V. Afanas'ev, A. Stesmans, R. Droopad, M.Passlack, L.F. Edge, D. G. SchlomElectron energy barriers at the interfaces of GaAs(100) with Gd2O3 appear to be insensitive to the Fermi level pinning indicating that charges at interface states are of marginal importance for the band alignment at semiconductor/insulator interfaces. The inferred conduction... (Read more)
- 14. Appl. Phys. Lett. 89, 061903 (2006) , “Nitrogen related vacancies in GaAs based quantum well superlattices”, J. Slotte, K. Saarinen, E.-M. Pavelescu, T. Hakkarainen, and M. PessaThe authors report on the influence of nitrogen incorporation on vacancies in GaAs based superlattices. The samples were molecular beam epitaxy grown on p-type GaAs substrates with the superlattice structure consisting of ten periods of quantum well material separated by GaAs buffers. Three... (Read more)
- 15. Appl. Phys. Lett. 89, 012505 (2006) , “Diffusion and clustering of substitutional Mn in (Ga,Mn)As”, Hannes Raebiger, Maria Ganchenkova, and Juhani von BoehmThe Ga vacancy mediated microstructure evolution of (Ga,Mn)As during growth and postgrowth annealing is studied using a multiscale approach. The migration barriers for the Ga vacancies and substitutional Mn together with their interactions are calculated using first principles, and temporal... (Read more)
- 16. J. Appl. Phys. 100, 083521 (2006) , “Thermally activated charge reversibility of gallium vacancies in GaAs”, Fedwa El-Mellouhi, Norm, and MousseauThe dominant charge state for the Ga vacancy in GaAs has been the subject of a long debate, with experiments suggesting −1, −2, or −3 as the best answer. We revisit this problem using ab initio calculations to compute the effects of temperature on the Gibbs free energy of... (Read more)
- 17. J. Appl. Phys. 100, 064910 (2006) , “Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy”, Yukiko Shimizu, Yusuke Mura, Akira Uedono, and Yoshitaka OkadaThe vacancy-type defects in Ga1yInyNxAs1x dilute nitride films grown by atomic H-assisted molecular beam epitaxy (H-MBE) were investigated. The positron annihilation measurements showed that the densities of... (Read more)
- 18. J. Appl. Phys. 100, 053516 (2006) , “Damage production in GaAs and GaAsN induced by light and heavy ions”, C. Björkas, K. Nordlund, K. Arstila, J. Keinonen, V. D. S. Dhaka, and M. PessaIon irradiation causes damage in semiconductor crystal structures and affects charge carrier dynamics. We have studied the damage production by high-energy (100 keV10 MeV) H, He, Ne, and Ni ions in GaAs and GaAs90N10 using molecular dynamics computer simulations. We... (Read more)
- 19. J. Appl. Phys. 100, 044503 (2006) , “Dislocation dynamics in strain relaxation in GaAsSb/GaAs heteroepitaxy”, B. Pérez Rodríguez and J. Mirecki MillunchickThe real-time stress evolution has been investigated during molecular-beam epitaxial growth of GaAs1xSbx/GaAs metamorphic buffer. These real-time data were obtained using an in situ multibeam optical sensor measurement and has been combined with... (Read more)
- 20. J. Appl. Phys. 100, 034503 (2006) , “Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates”, M. González, C. L. Andre, R. J. Walters, S. R. Messenger, J. H. Warner, J. R. Lorentzen, A. J. Pitera, E. A. Fitzgerald, and S. A. RingelThe effect of 2 MeV proton radiation on the introduction of deep levels in GaAs grown on compositionally graded SiGe/Si substrates was investigated using deep level transient spectroscopy (DLTS). Systematic comparisons were made with identical layers grown on both GaAs and Ge substrates to directly... (Read more)
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