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- 101. J. Appl. Phys. 43, 3499-3506 (1972) , “Electron Paramagnetic Resonance of the lattice Damage in Oxygen-Implanted Silicon”, K.L. Brower and Wendland BeezholdThe nature of the lattice damage produced at room temperature in ion-implanted intrinsic and n-type silicon has been studied as a function of 160-keV O+ ion fluence using electron paramagnetic resonance (EPR). The known EPR spectra observed were the negative divacancy (Si-G7), the... (Read more)Si| EPR ion-implantation neutron-irradiation| 31P D G7 Oxygen P3 Phosphorus S1 S2 SL2 Silicon amorphous vacancy .inp files: Si/SL2 | last update: Takahide Umeda
- 102. Phys. Rev. B 5, 4274 (1972) , “17O Hyperfine Structure of the Neutral (S=1) Vacancy-Oxygen Center in Ion-Implanted Silicon”, K. L. Brower.The intensity of the 17O hyperfine spectrum associated with the 28Si-17O-28Si isotopic configuration of the vacancy-oxygen (Si-S1) center was enhanced by ion implantation of 17O into silicon. The Si-S1 17O hyperfine spectrum was... (Read more)Si| EPR ion-implantation| 17O Oxygen SL1 pair(=2) vacancy .inp files: Si/V-O* | last update: Takahide Umeda
- 103. Appl. Phys. Lett. 15, 267 (1969) , “Electron Paramagnetic Resonance in Ion Implanted Silicon”, D. F. Daly, K. A. Pickar.Electron paramagnetic resonance spectra of radiation damage centers in silicon have been observed following implantation with nitrogen and phosphorous ions. Two of these spectra have narrow lines and can be fitted to anisotropic g-tensors and zero field splitting tensors. One is a new... (Read more)
- 104. Appl. Phys. Lett. 15, 208 (1969) , “Electron Paramagnetic Resonance of Defects in Ion-Implanted Silicon”, K. L. Brower, F. L. Vook, and J. A. BordersThe first EPR measurements of the identity of defects in an ion-implanted layer (< 15 000 Å) are reported. The SiP3 center is the dominant paramagnetic defect produced at room temperature by 400-keV O+ implantation in Al- and B-doped Lopex Si, and it anneals below 200°C. The... (Read more)
- 105. Phys. Lett. 25A, 232 (1967) , “Paramagnetic Centres in Proton-Irradiated Silicon”, H. Lütgemeier and K. SchnitzkeAs in the case of neutron irradiation P1, P3 and P6 centres occur in silicon after irradiation with protons of 3 MeV. A new centre is observed which is axially symmetric along the [111] axis and has the eigenvalues g|| = 2.0010 and g = 2.0103. (Read more)
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