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- 1. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. SullivanA rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)
- 2. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 3. J. Appl. Phys. 102, 103514 (2007) , AIP , “Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies”, A. K. Mishra, S. K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha, and D. DasDefects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by photoluminescence (PL) and positron annihilation spectroscopy (PAS) techniques. The as-prepared sample was heat treated at different temperatures to obtain nanocrystals in the size range of 19–39 ... (Read more)
- 4. J. Appl. Phys. 101, 023516 (2007) , “Effect of screw dislocation density on optical properties in n-type wurtzite GaN”, Jeong Ho You and H. T. JohnsonThe effect of open-core screw dislocations on photoluminescence in n-doped wurtzite GaN epilayer is studied computationally and compared with experimental data. A k•p Hamiltonian calculation domain is set up to contain a dipole of open-core screw dislocations, and its size... (Read more)
- 5. Phys. Rev. B 75, 085423 (2007) , “Room-temperature atmospheric oxidation of Si nanocrystals after HF etching”, X. D. Pi, L. Mangolini, S. A. Campbell, and U. KortshagenThe effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic... (Read more)
- 6. Phys. Rev. B 75, 085205 (2007) , “Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements”, M. G. Silly, P. Jaffrennou, J. Barjon, J.-S. Lauret, F. Ducastelle, A. Loiseau, E. Obraztsova, B. Attal-Tretout, and E. RosencherCathodoluminescence and photoluminescence spectroscopies have been performed on hexagonal boron nitride powders. The combination of these techniques allows us to analyze the two observed luminescence bands. A deep-level UV emission at about 4 eV is attributed to defects or impurities, and a... (Read more)
- 7. Phys. Rev. Lett. 98, 206406 (2007) , “Role of Intermolecular Coupling in the Photophysics of Disordered Organic Semiconductors: Aggregate Emission in Regioregular Polythiophene”, Jenny Clark, Carlos Silva, Richard H. Friend, and Frank C. SpanoWe address the role of excitonic coupling on the nature of photoexcitations in the conjugated polymer regioregular poly(3-hexylthiophene). By means of temperature-dependent absorption and photoluminescence spectroscopy, we show that optical emission is overwhelmingly dominated by weakly coupled H... (Read more)
- 8. Appl. Phys. Lett. 89, 262118 (2006) , “p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors”, X. J. Wu, D. Z. Shen, Z. Z. Zhang, J. Y. Zhang, K. W. Liu, B. H. Li, Y. M. Lu, D. X. Zhao, and B. YaoCd1−xFexS thin films with different Fe contents were grown on c-plane sapphire by low-pressure metal organic chemical vapor deposition. The resistivity of the thin films was found to increase with the addition of more Fe contents into the... (Read more)
- 9. Appl. Phys. Lett. 89, 211114 (2006) , “Site selective studies of Er3+ emission centers in Er-implanted 6H-SiC”, V. Glukhanyuk and A. KozaneckiIn this work the high resolution site selective photoluminescence (PL) using Fourier transform spectrometer and PL excitation spectra near 1.54 µm in Er-implanted 6H-SiC were investigated. Direct evidence for the existence of three different Er3+ emitting centers... (Read more)
- 10. Appl. Phys. Lett. 89, 173108 (2006) , “Midgap luminescence centers in single-wall carbon nanotubes created by ultraviolet illumination”, Konstantin Iakoubovskii, Nobutsugu Minami, Yeji Kim, Kanae Miyashita, Said Kazaoui, and Balakrishnan NaliniThe authors report the effect of ultraviolet (UV) illumination on optical properties of single-wall carbon nanotubes (SWCNTs) isolated using various dispersants. It is demonstrated that even weak UV light (~1 mW/cm2) can irreversibly alter the SWCNT structure, thus resulting in the... (Read more)
- 11. Appl. Phys. Lett. 89, 092107 (2006) , “Photoluminescence studies of impurity transitions in AlGaN alloys”, N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centersisolated cation vacancy with three negative charges... (Read more)
- 12. Appl. Phys. Lett. 89, 082102 (2006) , “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO”, V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. PhillipsThe influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of... (Read more)
- 13. Appl. Phys. Lett. 89, 061103 (2006) , “Field induced photoluminescence quenching and enhancement of CdSe nanocrystals embedded in SiO2”, A. W. Achtstein, H. Karl, and B. StritzkerThe authors describe the operation of an electro-optical photoluminescence quenching device based on CdSe nanoclusters formed using sequential ion implantation of Cd+ and Se+ in thermally grown SiO2 on silicon. A sample geometry consisting of a semitransparent gold... (Read more)
- 14. Appl. Phys. Lett. 89, 044107 (2006) , “Photoluminescence imaging of silicon wafers”, T. Trupke, R. A. Bardos, M. C. Schubert, and W. WartaPhotoluminescence imaging is demonstrated to be an extremely fast spatially resolved characterization technique for large silicon wafers. The spatial variation of the effective minority carrier lifetime is measured without being affected by minority carrier trapping or by excess carriers in space... (Read more)
- 15. Appl. Phys. Lett. 89, 041916 (2006) , “Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process”, Dong Wang, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, and Masahiko NakamaeCrystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5 °C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased... (Read more)
- 16. Appl. Phys. Lett. 89, 031902 (2006) , “Anti-Stokes photoluminescence in ZnO microcrystal”, Weitao Cao, Weimin Du, Fuhai Su, and Guohua LiLow temperature (10 K) strong anti-Stokes photoluminescence (ASPL) of ZnO microcrystal excited by low power cw 532 nm laser is reported here. Energy upconversion of 1.1 eV is obtained in our experiment with no conventional nonlinear effect. Through the study of the normal photoluminescence and... (Read more)
- 17. Appl. Phys. Lett. 88, 191904 (2006) , “Luminescence from Nd- and Dy-ion-implanted 4H–SiC”, Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, and Teruaki MotookaCathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4HSiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after... (Read more)
- 18. Appl. Phys. Lett. 88, 161905 (2006) , “Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence”, M. Yoshikawa, R. Sugie, M. Murakami, T. Matsunobe, K. Matsuda, and H. IshidaWe developed a tapping-mode-scanning near-field optical microscope to measure near-field photoluminescence (SNOM-PL) with nanometer spatial resolution using an ultraviolet laser, and we measured the defect distribution of a Si-doped GaN film. The obtained result was compared with one measured by... (Read more)
- 19. Appl. Phys. Lett. 88, 141919 (2006) , “Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals”, D. C. Reynolds, C. W. Litton, T. C. Collins, J. E. Hoelscher, J. NauseDonor-acceptor (D-A) pair spectra have been observed in the photoluminescence radiative recombination of selected donor bound exciton complexes in zinc oxide (ZnO) single crystals that have been ion implantation doped with H and Zn atoms and subsequently annealed in a nitrogen (N2)... (Read more)
- 20. J. Appl. Phys. 100, 123519 (2006) , “Origin of deep level defect related photoluminescence in annealed InP”, Youwen Zhao, Zhiyuan Dong, Shanshan Miao, Aihong Deng, Jun Yang, and Bo WangDeep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), thermally stimulated current (TSC), deep level transient spectroscopy (DLTS), and positron annihilation lifetime (PAL). A noticeable broad PL peak centered at 1.3 eV has been observed in the InP... (Read more)
- 21. J. Appl. Phys. 100, 114303 (2006) , “Influence of paramagnetic defects on multicolored luminescence from nanocrystalline silicon”, Keisuke Sato and Kenji HirakuriWe report on the correlation between paramagnetic defects and the luminescent properties of nanocrystalline silicon (nc-Si) using electron spin resonance (ESR) and photoluminescence measurements. Nanocrystalline silicon having particle sizes from 1.9 to 3.0 nm exhibited continuous luminescence... (Read more)
- 22. J. Appl. Phys. 100, 104901 (2006) , “Photoluminescence and photoconductivity in CdTe crystals doped with Bi”, E. Saucedo, C. M. Ruiz, V. Bermúdez, E. Dieguez, E. Gombia, A. Zappettini, A. Baraldi, and N. V. SochinskiiDefect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at... (Read more)
- 23. J. Appl. Phys. 100, 083512 (2006) , “Spectroscopy and optically stimulated luminescence of Al2O3:C using time-resolved measurements”, E. G. Yukihara and S. W. S. McKeeverThis paper reports the observation of ultraviolet (UV) emission at 335 nm in the optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al2O3:C) and presents results on the investigation of the OSL properties of this band, including its dose response, time... (Read more)
- 24. J. Appl. Phys. 100, 083106 (2006) , “Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition”, Zhizhong Yuan, Dongsheng Li, Minghua Wang, Peiliang Chen, Daoren Gong, Lei Wang, and Deren YangRoom temperature photoluminescence (PL) properties of the Tb3+ ion implanted nonstoichiometric silicon nitride (Tb3+:SiNx) and silicon dioxide (Tb3+:SiOx) were studied. The films were deposited by plasma-enhanced chemical vapor... (Read more)
- 25. J. Appl. Phys. 100, 073702 (2006) , “Size and shape effects on excitons and biexcitons in single InAs/InP quantum dots”, N. Chauvin, B. Salem, G. Bremond, G. Guillot, C. Bru-Chevallier, and M. GendrySingle InAs quantum dots grown on an InP vicinal substrate are studied using polarized microphotoluminescence. The study of electron-hole exchange energy splitting reveals that the energy splitting is influenced by quantum confinement. The biexciton binding energies found for single dots grown on... (Read more)
- 26. J. Appl. Phys. 100, 073501 (2006) , “Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon”, R. Harding, G. Davies, J. Tan, P. G. Coleman, C. P. Burrows, and J. Wong-LeungDefect centers generated in crystalline silicon by MeV Si implants have been investigated by a combination of photoluminescence, variable-energy positron annihilation measurements, depth profiling by etching, annealing studies, and the dependence on impurities. The broad 935 meV photoluminescence... (Read more)
- 27. J. Appl. Phys. 100, 043706 (2006) , “Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC”, W. C. Mitchel, W. D. Mitchell, Z. Q. Fang, D. C. Look, S. R. Smith, H. E. Smith, Igor Khlebnikov, Y. I. Khlebnikov, C. Basceri, and C. BalkasTemperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique... (Read more)
- 28. J. Appl. Phys. 100, 034318 (2006) , “Electric-field-induced quenching of photoluminescence in photoconductive organic thin film structures based on Eu3+ complexes”, J. Kalinowski, W. Stampor, M. Cocchi, D. Virgili, and V. FattoriA large electric field effect on photoluminescence (PL) from electroluminescent emitters sandwiched between two high-work-function electrodes is reported and a model of the effect formulated. We examine the PL behavior of Eu3+ complex-based organic thin films subjected to increasing... (Read more)
- 29. J. Appl. Phys. 100, 023712 (2006) , “Exciton migration in organic thin films”, Y. C. Zhou, Y. Wu, L. L. Ma, J. Zhou, X. M. Ding, and X. Y. HouLimitations of the analytical method for calculating the exciton distribution in organic thin films, attributed to the improper boundary conditions when the organic film approaches the exciton diffusion length, were analyzed by comparison with an exciton random walk simulation. The random walk... (Read more)
- 30. J. Appl. Phys. 100, 023529 (2006) , “Visible and near-infrared photoluminescences of europium-doped titania film”, C. W. Jia, E. Q. Xie, J. G. Zhao, Z. W. Sun, and A. H. PengEu3+-doped TiO2 films were prepared on silicon substrates by sol-gel method. Anatase and rutile phases appear when the samples were heat treated in oxygen atmosphere at 500 and 900 °C, respectively. Photoluminescence (PL) properties were investigated under the excitation... (Read more)
- 31. J. Appl. Phys. 100, 023109 (2006) , “Exciton fine structure and biexciton binding energy in single self-assembled InAs/AlAs quantum dots”, D. Sarkar, H. P. van der Meulen, J. M. Calleja, J. M. Becker, R. J. Haug, and K. PierzThe exciton and biexciton emissions of a series of single quantum dots of InAs in an AlAs matrix have been studied. These emissions consist of linear cross polarized doublets showing large values of both the biexciton binding energy and the fine-structure splitting. At increasing exciton emission... (Read more)
- 32. J. Appl. Phys. 100, 013518 (2006) , “Photoluminescence analysis on the indium doped Cd0.9Zn0.1Te crystal”, Qiang Li, Wanqi Jie, Li Fu, Ge Yang, Gangqiang Zha, Tao Wang, and Dongmei ZengPhotoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAPs) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the... (Read more)
- 33. J. Appl. Phys. 99, 113520 (2006) , “Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment”, A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, and S. AshokHydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural... (Read more)
- 34. J. Appl. Phys. 99, 103502 (2006) , “Correlation of Mn local structure and photoluminescence from CdS:Mn nanoparticles”, Huijuan Zhou, Detlev M. Hofmann, Helder R. Alves, and Bruno K. MeyerThe structure and luminescence properties of Mn2+ in CdS nanoparticles are studied. Electron paramagnetic resonance measurements show the existence of three distinct Mn2+ centers with different local structures in CdS nanocrystals: Mn ions substitutionally incorporated on Cd... (Read more)
- 35. J. Appl. Phys. 99, 093511 (2006) , “Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC”, Z. Q. Zhong, D. X. Wu, M. Gong, O. Wang, S. L. Shi, S. J. Xu, X. D. Chen, C. C. Ling, S. Fung, C. D. Beling, G. Brauer, W. Anwand, and W. SkorupaLow-temperature photoluminescence spectroscopy has revealed a series of features labeled S1, S2, S3 in n-type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S1,... (Read more)
- 36. J. Appl. Phys. 99, 093505 (2006) , “Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects”, S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T. Sota, A. Tsukazaki, A. Ohtomo, and M. KawasakiThe internal quantum efficiency (int) of the near-band-edge (NBE) excitonic photoluminescence (PL) in ZnO epilayers was significantly improved by eliminating point defects, as well as by the use of ZnO high-temperature-annealed self-buffer layer (HITAB) on a ScAlMgO4 substrate... (Read more)
- 37. J. Appl. Phys. 99, 093108 (2006) , “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC”, S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. ChichibuHigh-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature. The orange-yellow light emission due to the recombination of donor-acceptor pairs (DAPs) has a broad spectrum with a peak wavelength of 576 nm and a... (Read more)
- 38. J. Appl. Phys. 99, 073517 (2006) , “Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates”, S. L. Lu, D. S. Jiang, J. M. Dai, C. L. Yang, H. T. He, W. K. Ge, J. N. Wang, K. Chang, J. Y. Zhang, and D. Z. ShenMagnetophotoluminescence properties of Zn0.88Mn0.12Se thin films grown by metal-organic chemical vapor deposition on GaAs substrates are investigated in fields up to 10 T. The linewidth of the excitonic luminescence peaks decreases with the increasing magnetic field (<1 ... (Read more)
- 39. J. Appl. Phys. 99, 066102 (2006) , “Photoluminescence of wurtzite ZnO under hydrostatic pressure”, S. J. Chen, Y. C. Liu, C. L. Shao, C. S. Xu, Y. X. Liu, L. Wang, B. B. Liu, and G. T. ZouPhotoluminescence (PL) spectra of single-crystal ZnO bulk under hydrostatic pressure are studied using the diamond-anvil-cell technique at room temperature. The PL spectrum of ZnO single crystal taken at atmospheric pressure was dominated by a strong near-band-edge exciton emission. The emission... (Read more)
- 40. J. Appl. Phys. 99, 063709 (2006) , “Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates”, X. Q. Zhang, Z. G. Yao, S. H. Huang, Ikuo Suemune, and H. KumanoHigh-quality ZnO thin films have been grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Free-exciton absorption and exciton-LO phonon absorption peaks are observed in the films at room temperature, indicating that the exciton states are stable even at room temperature. Three... (Read more)
- 41. J. Appl. Phys. 99, 053516 (2006) , “Correlation between Zn vacancies and photoluminescence emission in ZnO films”, A. Zubiaga, J. A. García, F. Plazaola, F. Tuomisto, K. Saarinen, J. Zuñiga Pérez, and V. Muñoz-SanjoséPhotoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying... (Read more)
- 42. J. Appl. Phys. 99, 013502 (2006) , “Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy”, Y. S. Jung, W. K. Choi, O. V. Kononenko, and G. N. PaninLuminescence properties of ZnO films, which have been epitaxially grown on c-sapphire (0001) substrates by plasma-assisted molecular beam epitaxy, are investigated by means of different excitation sources and their measurement conditions. With the increase of measurement temperature,... (Read more)
- 43. Phys. Rev. B 74, 235205 (2006) , “Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3 eV spectral region in Mg-doped GaN”, G. N. Aliev, S. Zeng, S. J. Bingham, D. Wolverson, J. J. Davies, T. Wang, and P. J. ParbrookOptically-detected magnetic resonance (ODMR) experiments on magnesium-doped GaN produced by metal-organic vapor phase epitaxy show a group of strong signals with large linewidths (in excess of 0.15 Tesla) obtained when monitoring photoluminescence in the region between 5000 Å and 6200 ... (Read more)
- 44. Phys. Rev. B 74, 235204 (2006) , “Bound excitons in Cu2O: Efficient internal free exciton detector”, J. I. Jang, Y. Sun, B. Watkins, and J. B. KettersonWe report the spectroscopic observation of bound excitons in natural Cu2O samples, which are generated by impurity capture of free excitons. Due to the broken symmetry of a bound exciton, its radiative recombination rate increases, causing a greatly enhanced luminescence intensity... (Read more)
- 45. Phys. Rev. B 74, 235201 (2006) , “Annealing of multivacancy defects in 4H-SiC”, W. E. Carlos, N. Y. Garces, E. R. Glaser, and M. A. FantonThe annealing behavior of defects observed in electron paramagnetic resonance (EPR) and photoluminescence (PL) is discussed. We consider the divacancy (the P6/P7 EPR centers) and a previously unreported EPR center that we suggest is a VC-VSi-VC... (Read more)
- 46. Phys. Rev. B 74, 233203 (2006) , “Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC”, A. Galeckas, A. Hallén, S. Majdi, J. Linnros, and P. PirouzWe report on electronic properties of single- and double-layer stacking faults in 4H-SiC and provide an insight into apparent distinctions of recombination-enhanced defect reactions at these faults. Photoluminescence imaging spectroscopy and deep-level transient spectroscopy experiments... (Read more)
- 47. Phys. Rev. B 74, 195205 (2006) , “Magnetopolaron effect on shallow donors in GaN”, A. Wysmoek, R. Stpniewski, M. Potemski, B. Chwalisz-Pitka, K. Pakua, J. M. Baranowski, D. C. Look, S. S. Park, and K. Y. LeeResonant interaction between longitudinal-optic (LO) phonons and electrons bound on shallow donors in GaN is studied using magnetoluminescence of neutral-donor bound excitons (D0X). The experiments were performed on high-quality freestanding GaN material and heteroepitaxial... (Read more)
- 48. Phys. Rev. B 74, 155310 (2006) , “Optical study of excitation and deexcitation of Tm in GaN quantum dots”, Thomas Andreev, Nguyen Quang Liem, Yuji Hori, Mitsuhiro Tanaka, Osamu Oda, Daniel Le Si Dang, Bruno Daudin, and Bruno GayralWe report on the optical properties of molecular beam epitaxy grown GaN quantum dots (QDs) doped with Tm. Under optical excitation above the fundamental energy of GaN QDs, the fundamental transition emission from the GaN QD host was not observed while bright emission from Tm3+ manifolds... (Read more)
- 49. Phys. Rev. B 74, 035213 (2006) , “Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique”, Takashi Kita and Osamu WadaWe have studied bound exciton states of isoelectronic centers of nitrogen-doped GaAs by photoluminescence (PL) spectroscopy. The nitrogen doping has been performed in an atomically controlled way using the (3×3) nitrogen stable surface on GaAs(001), which has succeeded in forming a series of... (Read more)
- 50. Phys. Rev. B 74, 035208 (2006) , “Ultranarrow photoluminescence transitions of nitrogen cluster bound excitons in dilute GaAsN”, D. Karaiskaj, A. Mascarenhas, M. Adamcyk, E. C. Young, and T. TiedjeHigh resolution photoluminescence spectroscopy on heavily doped GaAs:N reveals the existence of excitons bound to a nitrogen cluster. The observed transitions are exceedingly sharp, similar to those observed for excitons bound to nitrogen pairs in high quality GaAs with the narrowest transition... (Read more)
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