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- 101. Appl. Phys. Lett. 67, 1280 (1995) , “Impact of Pb doping on the optical and electronic properties of ZnO powders”, K. Vanheusden, W. L. Warren, J. A. Voigt, C. H. Seager, and D. R. TallantElectron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic powders. We observe a decrease in the 2.26 eV emission peak and a concomitant smearing of the band edges, narrowing the effective gap of the... (Read more)
- 102. J. Appl. Phys. 77, 837 (1995) , “Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si”, Hisayoshi Itoh, Masahito Yoshikawa, Isamu Nashiyama, Hajime Okumura, Shunji Misawa, Sadafumi YoshidaPhotoluminescence (PL) has been used to study defects introduced by 1-MeV-electron irradiation in cubic silicon carbide (3C-SiC) films epitaxially grown on Si substrates by means of chemical vapor deposition. A dominant PL line of 1.913 eV observed in 3C-SiC irradiated with electrons was found to... (Read more)
- 103. Appl. Phys. Lett. 63, 2673 (1993) , “Observation of optically detected magnetic resonance in GaN films”, E. R. Glaser, T. A. Kennedy, H. C. Crookham, J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, J. N. KuzniaOptically detected magnetic resonance has been observed from GaN. Two magnetic resonances have been detected on the 2.2 eV-deep photoluminescence band. The first resonance is sharp [full width at half-maximum (FWHM) ~2.2 mT] with g=1.9515±0.0002 and... (Read more)
- 104. J. Appl. Phys. 74, 5901-5903 (1993) , “The nature of donor conduction in n-GaN”, M. Asif Khan, D. T. Olson, J. N. Kuznia, W. E. Carlos, J. A. Freitas, JrSingle crystal GaN thin films resulting from various deposition techniques are usually dominated by residual donors. To date, the true nature of this donor conduction is not known. Nitrogen vacancies, residual oxygen, and growth defects are cited as potential causes for the residual n-type... (Read more)
- 105. Phys. Rev. B 43, 6569 (1991) , “Optically detected magnetic resonance of dislocations in silicon”, V. Kveder, P. Omling, H. G. Grimmeiss, Yu. A. OsipyanThe observation of optically detected magnetic resonance (ODMR) signals directly correlated with dislocations in silicon is reported. The ODMR signals are identified as resonances from free electrons, dangling bonds, and quasifree holes bound to a one-dimensional potential in straight dislocations.... (Read more)
- 106. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 107. Physica B 116, 583-593 (1983) , “Investigations of well defined dislocations in silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. WeberThe velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420°C in the resolved shear stress range 30 <Ï„<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60° dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on Ï„, but also on the elastic strain of the lattice. In the second part the papers review EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 108. J. Lumin. 12-13, 441-445 (1976) , “ESR and luminescence of trapped hole centers in ZnO and SnO2”, E. Mollwo , D. ZwingelIn SnO2 single crystals acceptor centers are found upon incorporation of Al3+ and Ga3+ ions at cation sites. After UV-excitation, holes, trapped at these centers, give rise to polarized luminescence and thermoluminescence. The structure of the centers is analysed by ESR and compared with similar... (Read more)
- 109. Phys. Rev. B 7, 4547 (1973) , “Raman Scattering and Photoluminescence in Boron-Doped and Arsenic-Doped Silicon”, J. M. Cherlow, R. L. Aggarwal, and B. LaxThe deformation potentials and g values of the ground state of the boron acceptor in silicon have been determined from a study of the stress and Zeeman splitting of the electronic Raman scattering in this material. The stress splitting of the Raman line results from a twofold splitting of the... (Read more)
- 110. Solid State Commun. 8, 1559-1563 (1970) , “The yellow luminescence of zinc oxide”, O. F. Schirmer and D. ZwingelFrom a simultaneous observation of the ESR of the paramagnetic Li center and the yellow emission of ZnO, especially its polarization, it is concluded that this luminescence band is due to a recombination of an electron with the neutral Li acceptor. (Read more)
- 111. Phys. Rev. 133, A1163 (1964) , “Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption”, W. J. Choyke, D. R. Hamilton, and Lyle PatrickAbsorption measurements of cubic SiC at 4.2°K show that the absorption edge is due to indirect, exciton-creating transitions, with an exciton energy gap of 2.390 eV. The energies of the phonons participating in these transitions are 46, 79, 94, and 103 meV, and suggest that the conduction-band... (Read more)
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