Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 1. Physica B 308-310, 691 (2001) , “Contactless studies of semi-insulating 4H–SiC”, W. E. Carlos, W. J. Moore, G. C. B Braga, J. A. Freitas, Jr. , E. R. Glaser and B. V. ShanabrookSemi-insulating (SI) silicon carbide is important for applications in high-power, high-frequency electronics, such as SiC MESFETs and GaN FETs. In this work, we discuss the use of low-temperature electron paramagnetic resonance (EPR), room- and low-temperature FTIR and photoluminescence as potential... (Read more)
- 2. Phys. Rev. B 64, 235202 (2001) , “Photosensitive electron paramagnetic resonance spectra in semi-insulating 4H SiC crystals”, E. N. Kalabukhova, S. N. Lukin, A. Saxler, W. C. Mitchel, S. R. Smith, J. S. Solomon, A. O. EvwarayePhotosensitive electron paramagnetic resonance (EPR) investigations of unintentionally doped, semi-insulating (s.i.) 4H–SiC have been made at 37 GHz and 77 K including photoexcitation and photoquenching experiments. In the dark the EPR spectrum consists of a low intensity line due to boron on the... (Read more)
- 3. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5×1018 to 5.0×1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
- 4. Mater. Sci. Eng. 93, 39-48 (2002) , “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. MolnarWe will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN single quantum well (SQW) light emitting diodes (LEDs) through magnetic resonance techniques. Electron paramagnetic resonance (EPR) and... (Read more)
- 5. Appl. Phys. Lett. 80, 410 (2002) , “The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance”, M. E. Zvanut and V. V. KonovalovPhotoinduced electron paramagnetic resonance studies performed on nominally semi-insulating, high purity 4H-SiC have revealed charge transfer from an intrinsic defect (ID) to both the shallow boron acceptor and nitrogen donor. At 4 K, incident photon energy between 1.0 and 1.7 eV produces an... (Read more)
- 6. Physica B 340-342, 15-24 (2003) , “Defects in SiC”, E. Janzén, I. G. Ivanov, N. T. Son, B. Magnusson, Z. Zolnai, A. Henry, J. P. Bergman, L. Storasta, F. CarlssonRecent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H–SiC in the dipole approximation are derived and the ionization energy for the N donor at... (Read more)
- 7. Physica B 340-342, 156 (2003) , “Electrical and multifrequency EPR study of nonstoichiometric defects in 4H-SiC”, E. N. Kalabukhova, S. N. Lukin, D. V. Savchenko and W. C. MitchelTwo paramagnetic intrinsic defects P and ND1 have been studied in both C-rich n-type 4H-SiC and undoped semi-insulating (s.i.) 4H-SiC in the dark and under illumination of the s.i. sample with light at 140 and 37 GHz in the temperature interval from 4.2 to 77 K. Photo EPR and Hall effect... (Read more)
- 8. Phys. Rev. B 68, 12102 (2003) , “240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grown 4H SiC”, Valery V. Konovalov, Mary Ellen Zvanut, Johan van Tol240 GHz electron paramagnetic resonance (EPR) measurements of as-grown nominally semi-insulating 4H SiC detected two well-separated centers ID1 and ID2. The EPR parameters of ID1 and ID2 coincide with that of EI5 and EI6 centers previously detected in 2-MeV electron-irradiated p-type... (Read more)
- 9. Phys. Rev. B 69, 115210 (2004) , “Optical and magnetic properties of Mn in bulk GaN”, A. Wolos, M. Palczewska, M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, M. Bockowski, I. Grzegory, S. PorowskiWe report results of electron paramagnetic resonance, magnetization, and optical absorption studies of bulk GaN crystals doped with Mn and, for some samples, codoped with Mg acceptor. The experiments performed show that the charge state of the Mn ion in GaN depends on the Fermi level position in the... (Read more)
- 10. Mater. Sci. Forum 457-460, 437 (2004) , “Defects in high-purity semi-insulating SiC”, N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, E. Janzén
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)