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- 1. Phys. Rev. 90, 988 (1953) , “Electron Spin Resonance in a Silicon Semiconductor”, A. M. Portis, A. F. Kip, C. Kittel, W. H. Brattain.We hava observed electron spin resonance absorption in the 9000Mc/sec range in a powdered n type silicon semiconductor specimen at temperatures between 4ºK and 300ºK.We belive this is the first occasion that electron spin resonance has been reported for a semiconductor.The preliminary... (Read more)
- 2. Phys. Rev. 94, 1392 (1954) , “Spin Resonance of Donors in Silicon”, R. C. Fletcher, W. A. Yager, G. L. Pearson, A. N. Holden, W. T. Read, and F. R. MerrittResonance absorption belived associated with the spin of electrons bound to Group V donor atoms has been observed in several different examples of silicon.The absorption was measured on a Zeeman modulation spectrometer operating at a frequancy of 24000 Mc/sec.The samples were cut from single... (Read more)
- 3. Phys. Rev. 95, 1686 (1954) , “Electron Spin Resonance of an Impurity Level in Silicon”, A. Honig and A. F. KipThe saturation of the microwave transition J=0→1 of CH3Sl35 has been measured by the method of Baird and Bird1.The resulte constitute the first measurement on saturation of a rotational absorption line,all other microwave saturation measurements having been... (Read more)
- 4. Nature 173, 439 (1954) , “PARAMAGNETIC RESONANCE IN NEUTRON-IRRADIATED DIAMOND AND SMOKY QUARITZ”, Dr. J. H. E. Griffiths, J. Owen, I. M. WardThe nature of lattice defects in neutron-irradiated diamond is a problem of current interest. These defects are known to cause changes in some of the physical properties1 and give rise to a paramagnetic absorption spectrum. We have measured this spectrum in the temperature-range 20º-290ºK., using wave-lengths of 1-2 and 3-1 cm. There are many closely spaced lines, of which two main types can be distinguished. (Read more)
- 5. Phys. Rev. 103, 501 (1956) , “Polarization of Phosphorus Nuclei in Silicon”, G. Feher and E. A. GereIn the preceding Letter a scheme for polarizing unclei was described.This letter deals with the experimental verificationof the scheme. (Read more)
- 6. Phys. Rev. 103, 834 (1956) , “Observation of Nuclear Magnetic Resonances via the Electron Spin Resonance Line”, G. Feher.The double-frequency resonance method reported recently in connection with a unclear polarization schemehas been extended to observe unclear transitions and thereby determine hyperfine interactions and unclear g values. (Read more)
- 7. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
- 8. Phys. Rev. 107, 1462 (1957) , “Spin and Magnetic Moment of P32 by the Electron Nuclear Double-Resonance Technique”, G. Feher, C. S. Fuller, E. A. Gere.The spin and magnetic moment of 14-day P32 with dtermined by the electron unclear double resonance (ENDOR) technique.The P32 obtained from Oak Ridge was diffused into high-resistivity silicon plates having a total volume of 0.25 cm3. (Read more)
- 9. Phys. Rev. Lett. 1, 295 (1958) , “Spin of Fe57”, G. W. Ludwig, H. H. Woodbury, R. O. Carlson.The spin of the stable isotope Fe57 has been directly observed to be 1/2 from the electron spin resonance spectrum of iron-doped silicon.Samples were prepared by alloying several milligrams of ironenriched to contain 84.1% Fe57 onto silicon crystals 3mm×3mm×10mm.The iron was... (Read more)
- 10. Phys. Rev. 109, 1172 (1958) , “Hfs Anomaly of Sb121 and Sb123 Determined by the Electron Nuclear Double Resonance Technique”, J. Eisinger, G. Feher.The ratios of the hyperfine interaction constants "a" and the nuclear g factors of the stable isotopes of antimony have been measured. From these measurements the hyperfine structure anomaly, defined as ?=(a121/a123)(g123/g121)-1, was found to be... (Read more)
- 11. Phys. Rev. 109, 221 (1958) , “Spontaneous Emission of Radiation from an Electron Spin System”, G. Feher, J. P. Gordon, E. Buehler, E. A. Gere, and C. D. ThurmondIt was pointed out by Combrission,Honig,and Townes that under certain conditions energy which has been stored in a spin system may be spontaneously and coherently radiated into a resonant cavity at the Larmor precession frequency of the spins.In this note we wish to report the direct observation of... (Read more)
- 12. Phys. Rev. Lett. 2, 39 (1959) , “ELECTRON SPIN RESONANCE OF ACCEPTOR STATES IN DIAMOND”, W. V. Smith, I. L. Gelles, and P. P. SorokinPrevious work reporting electron spin resonance in diamond has been concerned exclusively with paramagnetic centers produced by irradiation with fast neutrons. Using standard resonance techniques we have recently detected at room temperature a family of weak, narrow resonance lines near g=2... (Read more)
- 13. Phys. Rev. 114, 1219 (1959) , “Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique”, G. Feher.The ground-state wave function of the antimony, phosphorus, and arsenic impurities in silicon has been investigated by means of the electron nuclear double resonance (ENDOR) method. By this method the hyperfine interactions of the donor electron with the Si29 nuclei situated at different... (Read more)
- 14. Phys. Rev. 114, 1245 (1959) , “Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects”, G. Feher and E. A. GereThe different relaxation processes that connect the four energy levels in phosphorus doped silicon have been investigated experimentally. The relaxation time Ts (?ms=1, ?mI=0) was found to be independent of phosphorus concentration below ?1016... (Read more)
- 15. Phys. Rev. 115, 1546 (1959) , “Electron-Spin Resonance of Nitrogen Donors in Diamond”, W. V. Smith, P. P. Sorokin, I. L. Gelles, and G. J. LasherElectron-spin resonance of bound substitutional nitrogen donors in diamond is observed and discussed. The g factor is isotropic at 2.00240.0005. For a given donor, one of the C-N bond directions is a hyperfine axis with constants A=40.8 oersteds, B=29.2 oersteds. There are thus four types of... (Read more)
- 16. J. Phys. Chem. Solids 8, 490 (1959) , “Spin resonance of deep level impurities in germanium and silicon”, G. W. Ludwig, H. H. Woodbury and R. O. CarlsonElectron spin resonance measurements have been reported for nickel and manganesein germanium.We have been studying several deep level impurities in germanium and silicon be resonance tecniques,but only two system,nickel in germanium and manganese in silicon,will be discussed here. (Read more)
- 17. J. Appl. Phys. 30, 1195 (1959) , “Paramagnetic Resonance in Electron Irradiated Silicon”, G. Bemski.Electron spin resonance has been observed in n-type silicon irradiated with 0.5-Mev electrons. The particular resonance lines discussed here appear only in pulled crystals which contain about 1018 oxygen atoms per cm3. The lines do not appear in floating zone crystals... (Read more)Si| EPR electron-irradiation| A Oxygen Silicon pair(=2) vacancy .inp files: Si/V-O | last update: Takahide Umeda
- 18. J. Appl. Phys. 30, 1198 (1959) , “Spin Resonance in Electron Irradiated Silicon”, G. D. Watkins, J. W. Corbett, and R. M. WalkerThe spin resonance behavior in room temperature irradiated n-type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method. The dominant spectrum in each is discussed. The defects giving rise to the spectra are... (Read more)
- 19. Phys. Rev. Lett. 5, 309 (1960) , “Paramagnetic Resonance Absorption from Acceptors in Silicon”, G. Feher, J. C. Hensel, and E. A. GereIn the past,several attempts to observe the paramagnetic absorption from acceptors in silicon were unsuccessful.The reasons for this failure were pointed out by Kohn and are associated with the degeneracy of the valence band in silicon.We wish to report in this Letter the observation of the... (Read more)
- 20. Phys. Rev. Lett. 5, 425 (1960) , “Resonant Spin-Spin Interaction between Donors and Acceptors in Silicon”, R. A. Levy.A reduction of the direct relaxation time of donor electrons in silicon,belived to be due to a resonant spin-spin interaction with a background acceptor resonance line,has been observed in compensated silicon containing approximately 5×1015 phosphorus donor/cm3 and... (Read more)
- 21. Phys. Rev. Lett. 5, 96 (1960) , “Vacancy Interactions in Silicon”, H. H. Woodbury and G. W. LudwigThe production and properties of vacancies in silicon are subjects upon which much empirical work has been done.For the most part the interpretation of the data in terms of detailed models has been inconclusive.Recently the interaction of radiation-induced defects(suggested to be vacancies)with... (Read more)
- 22. Phys. Rev. 117, 102 (1960) , “Spin Resonance of Transition Metals in Silicon”, H. H. Woodbury and G. W. LudwigSpin resonance measurements are reported for various charge states of four transition metals in silicon, namely for V++, Cr+, Mn-, Mn++, and Fe0. In each case the g tensor and the hyperfine interaction with the impurity nucleus are isotropic.... (Read more)Si| EPR| Iron Manganese Vanadium .inp files: Si/Mn- Si/Fe Si/Mn4 Si/Vanadium | last update: Masatoshi Sasaki
- 23. Phys. Rev. 117, 1286 (1960) , “Magnetic Moment of Fe57”, G. W. Ludwig, H. H. Woodbury.An electron-nuclear double resonance study has been made on the spectrum of neutral iron atoms in silicon. These measurements lead to a value of +0.09030.0007 nm for the magnetic moment of Fe57. (Read more)
- 24. Phys. Rev. 117, 1287 (1960) , “Magnetic Moment of Au197”, H. H. Woodbury, G. W. Ludwig.Chromium-gold and maganese-gold impurity pairs in silicon have been observed by electron spin resonance techniques. Electron-nuclear double resonance studies of the gold hyperfine structure lead to a value of 0.14390.0004 nm for the magnetic moment of Au197. (Read more)
- 25. Phys. Rev. 118, 939 (1960) , “Cross Relaxation Studies in Diamond”, P. P. Sorokin, G. J. Lasher, and I. L. GellesA microwave double resonance experiment performed on the paramagnetic nitrogen centers in diamond shows that in this system cross relaxation occurs via a four spin flip mechanism which exactly conserves Zeeman energy. In this process, which was first postulated by Bloembergen and co-workers in their... (Read more)
- 26. Phys. Rev. Lett. 7, 240 (1961) , “Splitting of Electron Spin Resonance Lines by an Applied Electric Field”, G. W. Ludwig and H. H. WoodburyNuclei or paramagnetic irons in many solids occupy sites which lack inversion symmetry. Bloembergen has recently called attention to the possibility of observing shifts, proportional to the applied electric field ε, in the energy levels of such systems. Consistent with Bloembergen's ideas,Kushida... (Read more)
- 27. Phys. Rev. Lett. 7, 314 (1961) , “Silicon Divacancy and Its Direct Production by Electron Irradiation”, J. W. Corbett and G. D. WatkinsTo date two defects produced in radiation damage of silicon hava been identified.These defects are a vacancy-oxygeon pair and a vacancy-phosphorous pair. They were identified largely by their associated electron spin resonance spectra and have been labeled the Si-A and Si-E... (Read more)Si| EPR electron-irradiation| G6 Silicon pair(=2) vacancy .inp files: Si/V2+ | last update: Takashi Fukushima
- 28. Phys. Rev. 121, 1001 (1961) , “Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center”, G. D. Watkins, J. W. Corbett.The Si-A center is a major, radiation-damage defect produced in "pulled" silicon by a room temperature irradiation. As a result of studies described in this paper (I), and the following one (II), it is concluded that this center is a lattice vacancy with an oxygen atom impurity bridging two of the... (Read more)
- 29. Phys. Rev. 124, 1068 (1961) , “Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes”, D. K. Wilson, G. Feher.The excited states of the antimony, phosphorus, and arsenic impurities in silicon have been investigated by subjecting samples to a uniaxial stress and observing the change in the electron spin resonance spectrum. The experiments were performed at 1.25K and ?9000 Mc/sec on silicon samples subjected... (Read more)
- 30. J. Appl. Phys. 32, 1854 (1961) , “Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical Damage”, G. K. Walters and T. L. EstleElectron spin resonance characteristics of a number of materials subjected to violent mechanical treatment are reported. A line with g=2.0055 observed in silicon is attributed to defects introduced near the surface by mechanical damage. The resonance properties are uninfluenced by... (Read more)
- 31. J. Appl. Phys. 32, 1854 (1961) , “Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical Damage”, G. K. Walters and T. L. EstleElectron spin resonance characteristics of a number of materials subjected to violent mechanical treatment are reported. A line with g=2.0055 observed in silicon is attributed to defects introduced near the surface by mechanical damage. The resonance properties are uninfluenced by... (Read more)
- 32. Solid State Physics 13, 223-304 (1962) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Electron Spin Resonance in Semiconductors”, G. W. Ludwig, H. H. Woodbury.I. Introduction (p.223): II. The Resonance Technique (p.226): 1. The Spin Hamiltonian (p.226), 2. The Spin Resonance Spectrum (p.231), 3. Experimental Techniques (p.237), III. Resonance Studies in Silicon (p.243): 4. Shallow Donor Impurities (p.244), 5. Shallow Acceptor Impurities (p.259), 6. Transition Metal Ions (p.263), 7. Impurity Pairs (p.273), 8. Radiation Damage Centers (p.280), IV.Resonance Studies in Other Semiconductors (p.286): 9. Germanium (p.286), 10. Graphite and Diamond (p.290), 11. Silicon Carbide (p.293), 12. Indium Antimonide and Gallium Phosphide (p.294), 13. Zinc Sulfide and Related Semiconductors (p.295), Acknowledgments (p.304)
- 33. Phys. Rev. 126, 466 (1962) , “Spin Resonance of Pd and Pt in Silicon”, H. H. Woodbury and G. W. LudwigThe transition metals Pd and Pt usually occur in diamagnetic form. However, in silicon both Pd and Pt act as acceptor impurities; the ions Pd- and Pt- are paramagnetic and have been studied by electron spin resonance. Both ions have a [001] and two mutually perpendicular [110]... (Read more)
- 34. Phys. Rev. 128, 1605 (1962) , “Electron Spin Resonance in Neutron-Irradiated Silicon”, M. Nisenoff and H. Y. FanElectron spin resonance produced in silicon by fast neutron irradiation was studied. The temperature of the samples during the irradiation was about 50C. Different spectra were observed depending on the Fermi level in the irradiated sample. Samples with the Fermi level near the middle of the energy... (Read more)
- 35. Nature 194, 829 (1962) , “DIAMONDS CONTAINING CONTROLLABLE IMPURITY CONCENTRATIONS”, C. M. Huggins, P. CannonThe presence of cosiderable quantities of impurities in natural diamond has recently been confirmed1,2. This led Frank3 to remark that multiple techniques of examination must be used on such material. In view of the report of Yoneda4 concerning possible effects of nitrogen on the X-ray diffraction patterns of diamond, it seems worth-while to us to comment further on some of the results which we have gained by the deliberate introduction of a given impurity into laboratory-grown diamond. We shall limit ourselves to a qualitative examination of the electron spin resonance spectra of a few specimens, in the belief that the profundity of the effects suffices to establish that progress in this area is now limited by the composition variability of natural diamond. (Read more)
- 36. Phys. Rev. Lett. 10, 220 (1963) , “ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OF THE VACANCY IN DIAMOND”, John A. Baldwin, Jr.Griffiths, Owen, and Ward reported that diamonds exposed to reactor neutrons developed an intense isotropic electron paramagnetic resonance (EPR) absorption lone whose g value was very close to that of the free electron. They found that a similar line was produced by 1-MeV electrons. The work herein... (Read more)
- 37. Phys. Rev. 132, 648 (1963) , “Spin-1 Centers in Neutron-Irradiated Silicon”, Wun Jung and G. S. NewellElectron paramagnetic resonance was used to study a number of fast-neutron-induced defects formed in pile-irradiated silicon and to follow their concentrations as a function of annealing. Measurements were made at 300, 77, and 4.2K on samples which had attained intrinsic resistivity during... (Read more)
- 38. Nature 198, 981 (1963) , “Electron Spin Resonance in Neutron-irradiated Diamond”, E. A. Faulkner, E. W. J. Mitchell, P. W. WhippeyRecent work has shown that the nature of the electron spin resonance spectrum observed in irradiated diamond depends on the type and amount of irradiation. Faulkner and Lomer used comparatively heavy doses of 2-MeV electrons (up to 8×1019 electron cm-3) and distinguished four systems, all of which show a g-value which is isotropic and equal to the free-spin value within 0-2 per cent: (a) asingle line of width about 5 gauss; (b) a system of 24 lines with symmentry axes near the <221> directions, and a D-value of 0-14 cm-1; (c) a system of 6 lines with symmentry axes along the <100> directions and a D-value of 0-14 cm-1; (d) a broad absorption with a half-power width of about 70 gauss, showing a complicated anisotropic structure. (Read more)
- 39. J. Phys. Chem. Solids 24, 1 (1963) , “A new paramagnetic center in electron irradiated silicon*1”, G. Bemski, B. Szymanski.Electron irradiation of silicon produces paramagnetic centers in n-type silicon. Experiments are described in which a new paramagnetic center is observed. In contrast to the two previously studied centers, electrons of 0.5 MeV energy do not produce the new center. The dependence of the rate of... (Read more)
- 40. J. Phys. Chem. Solids 24, 1467 (1963) , “Spin and combined resonance on acceptor centres in Ge and Si type crystals—I Paramagnetic resonance in strained and unstrained crystals”, G. L. Bir, E. I. Butikov, G. E. Pikus.A theory of paramagnetic resonance on acceptor centres in deformed and non-deformed Ge and Si type crystals is developed. The splitting of the ground state under the action of the deformation and magnetic field is determined and the probability of transitions between levels is estimated. Using the... (Read more)
- 41. Phys. Rev. 134, A1359 (1964) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center”, G. D. Watkins, J. W. Corbett.The Si-E center is one of the dominant defects produced by electron irradiation in phosphorus-doped vacuum floating zone silicon. It introduces an acceptor level at ?(Ec-0.4) eV and gives rise to an electron paramagnetic resonance when this level does not contain an electron. As a result... (Read more)
- 42. Phys. Rev. 134, A265 (1964) , “Electron Spin Resonance Experiments on Shallow Donors in Germanium”, D. K. WilsonAt liquid helium temperatures, spin resonance of localized donor electrons has been observed in phorphorus-, arsenic-, and bismuth-doped germanium. The presence of hyperfine splitting confirms the singlet as the ground state for all three. The separation of the excited triplet states has been... (Read more)
- 43. Phys. Rev. 135, A1381-A1385 (1964) , “New Oxygen Infrared Bands in Annealed Irradiated Silicon”, J. W. Corbett, G. D. Watkins, and R. S. McDonaldInfrared and electron-spin-resonance measurements on the recovery of silicon irradiated with 1.5-MeV electrons are presented. In the infrared measurements the disappearance of the previously reported 829-cm-1 (12?) oxygen vibration band is followed, and the appearance and subsequent... (Read more)
- 44. Sov. Phys. Solid State 6, 2460 (1965) , “DISTRIBUTION OF PARAMAGNETIC NITROGEN CENTERS IN SOME TYPE-I DIAMONDS”, N. D. Samsonenko
- 45. Solid State Commun. 3, 307 (1965) , “EXCHANGE INTERACTION EFFECTS IN THE E.S.R. SPECTRUM OF SUBSTITUTIONAL NITROGEN IN DIAMOND”, J. H. N. Loubser, W. P. van Ryneveld and L. du PreezThe E.S.R. lines due to substitutional nitrogen in synthetic diamond powders, heavily doped with nitrogen, were found to exhibit the characteristic features of exchange interaction. In the coats of natural diamonds additional lines due to exchange interaction between triads of nitrogen atoms were... (Read more)
- 46. Solid State Commun. 3, 357 (1965) , “Elektronenspin-Resonanz in Verformtem Silizium”, H. Alexander, R. Labusch and W. SanderBei 800°C verformte Silizium-Kristalle zeigen ein Elektronenspinresonanz-Signal, dessen Intensität mit der Versetzungsdichte zunimmt. Wir vermuten, daβ dieses Signal von ungepaarten Elektronen im Kern von Versetzungen stammt. Durch die Verformung wird die Bildung von Atomgruppen in... (Read more)
- 47. Radiation Damage in Semiconductors 97-113 (1965) , Dunod, Paris , “A Review of EPR Studies in Irradiated Silicon”, G. D. Watkins.1. INTRODUCTION (p.97): 2. THE EPR EXPERIMENT (p.97): 3. RESULTS (p.99): A. The lattice Vacancy (p.99), B. Vacancies Trapped by Other Defects (p.102), C. Vacancy Motion (p.103), D. Interstitial Defects (p.103), E. Other Spectra (p.105), 4. SUMMARY AND CONCLUSION (p.110): 5.ACKNOWLEDGMENTS (p.110):
- 48. Phys. Rev. 137, A1520 (1965) , “Paramagnetic Resonance Study of a Deep Donor in Silicon”, G. W. Ludwig.The impurity sulfur acts as a double donor in silicon. Assuming the ion to be substitutional, S+ is analogous to neutral phosphorus, except that the binding energy of the donor electron is much greater. Here we report paramagnetic resonance absorption of S+, including a... (Read more)Si| EPR| Iron S Sulfur U donor n-type .inp files: Si/Sulfur Si/FeS Si/Sulfur2 Si/Sulfur3 | last update: Takahide Umeda
- 49. Phys. Rev. 138, A543 (1965) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy”, G. D. Watkins and J. W. CorbettTwo electron paramagnetic resonance spectra produced in silicon by 1.5-MeV electron irradiation are described. Labeled Si-G6 and Si-G7, they are identified as arising from the singly positive and singly negative charged states of the divacancy, respectively. The observed hyperfine interactions with... (Read more)
- 50. Phys. Rev. 138, A555 (1965) , “Production of Divacancies and Vacancies by Electron Irradiation of Silicon”, J. W. Corbett and G. D. WatkinsA study is described of the dependence of the room-temperature production of divacancies and vacancies in silicon upon the energy of the bombarding electrons over the range 0.7-56 MeV. For the divacancy, the Si-G6 electron-paramagnetic-resonance spectrum associated with the singly positively charged... (Read more)
- 51. J. Phys. Soc. Jpn. 20, 1447 (1965) , “Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures”, S. Maekawa, N. Kinoshita.Effects of exchange and motion on electron spin resonance spectrum of phosphorus doped Si with concentration of 3×1016cm-3~3×1019cm-3 were investigated at liquid helium temperatures and at about 9300 Mc/sec. At lower concentrations, the intensity of... (Read more)
- 52. J. Chem. Phys. 42, 1898 (1965) , “Irradiation Damage in Type I Diamond”, H. B. Dyer and L. du PreezIn addition to the GRI and uv bands induced in all diamond by 0.78-MeV electron irradiation, another optical absorption feature, which we have named the ND1 band, is found in all Type I diamonds. A single EPR line appears to be associated with the ND1 band.It is suggested that the ND1 center arises... (Read more)
- 53. Brit. J. Appl. Phys. 16, 457 (1965) , “New lines in the electron spin resonance spectrum of substitutional nitrogen donors in diamond”, J. H. N. Loubser, L. du PreezThe electron spin resonance lines of nitrogen impurity in diamond found by Smith, Sorokin, Gelles and Lasher have been re-examined in special samples and at low energy densities. (Read more)
- 54. Surf. Sci. 5, 267-282 (1966) , “Electron paramagnetic resonance study on silicon, germanium, and gallium arsenide surfaces interacting with adsorbed oxygen*1”, P. Chan , A. SteinemannWhen exposed to various oxygen containing gases, powdered samples of Si, Ge, InAs, and GaAs show an EPR signal at g = 2.0027. Adsorption of gaseous mixtures containing oxygen broadens the line. This is attributed to dipolar interaction between the paramagnetic centres created below the semiconductor... (Read more)
- 55. Phys. Rev. Lett. 17, 428 (1966) , “Direct Observation of Lithium-Defect Interaction in Silicon by Electron Paramagnetic Resonance Measurements”, Bernard GoldsteinElectron paramagnetic resonance measurements have been used to observe directly the interaction of lithium with damage centers produced by electron irrsadiation in n-type, floatzone silicon. The silicon is characterized by low oxygen concentrations, with lithium as the predominant... (Read more)
- 56. Phys. Rev. 149, 687 (1966) , “Electron Paramagnetic Resonance and Electrical Properties of the Dominant Paramagnetic Defect in Electron-Irradiated p-Type Silicon”, N. Almeleh, B. Goldstein.Lattice defects having strong paramagnetic resonances are introduced into p-type silicon that has been bombarded with electrons. We have studied the paramagnetic properties and growth of the dominant defect so introduced (the K center) as functions of electron flux and bombardment energy under... (Read more)
- 57. Nature 210, 1037 (1966) , “Electron Spin Resonance Spectra associated with Nitrogen in Diamonds”, H. J. Bower, M. C. R. SymonsMANY diamonds show an electron spin resonance spectrum which has been attributed to the presence of single nitrogen atoms substituted for carbon at a diamond lattice site. Smith etal.1 found four types of nitrogen donors, equally abundant and differing only in their hyperfine axes, these being the four C–N bond directions. They measured the hyperfine coupling constants for 14N(I=1), and for 13C(I = ½) in the nearest neighbour positions (denoted centre I). Loubser and du Preez2 found additional lines in the spectrum, which they attributed to interaction of the unpaired electron with carbon-13 at other lattice sites (centres II, III and IV). The hyperfine coupling constants are recorded in Table 1, together with the orbital populations. These populations were obtained using values of |ψ2s(0)|2 and
-3>2p calculated from self-consistent-field atomic wave functions derived by Mayers and by Roothaan and Clementi (see ref. 3). (We have omitted any correction for the δ+ charge on nitrogen and the δ- charge on carbon: this would increase the spin density on carbon at the expense of the nitrogen.) (Read more) - 58. Nature 210, 692 (1966) , “DISTRIBUTION OF SUBSTITUTIONAL NITROGEN DONORS IN SYNTHETIC DIAMONDS”, M. J. A. Smith, B. R. Angel, R. G. EmmonsConsiderable attention has been devoted to the study of nitrogen impurity in natural diamonds using the technique of electron spin resonance1-3. The spectrum obtained in due to the unpaired electron provided by the substitutional nitrogen atom and the main feature is a triplet at g = 2.0024 caused by interaction with the nitrogen nucleus which has a spin of unity. The distribution of nitrogen is variable and would seem to depend on the method by which the diamond was formed. (Read more)
- 59. Jpn. J. Appl. Phys. 5, 333 (1966) , “Electron Spin Resonance in SiO2 Grown on Silicon”, Y. NishiRecently there has been much interest in the behavior of space charge in SiO2 on silicon. Based on the generation and motion of charged species,structural models have been proposed by Seraphimet al. and by Revesz. In the present study electron spin resonance absorption has been... (Read more)
- 60. J. Catalysis 5, 314-324 (1966) , “ESR investigation of gas-solid interactions* The oxygen-zinc oxide system”, K.M. SancierESR measurements were combined with determinations of the amount of oxygen adsorbed or desorbed on ZnO in order to investigate the relationship between the solid state electronic properties of a semiconductor catalyst and the amounts and the nature of the adsorbed oxygen species. (Read more)
- 61. J. Catalysis 6, 411-418 (1966) , “Radiation-induced catalytic conversions : Organic compounds adsorbed on solids of different electronic properties”, G. M. Zhabrova, V. I. Vladimirova, B. M. Kadenatsi, V. B. Kazanskii , G. B. PariiskiiThe low-temperature radiation-induced conversions of methanol and cyclohexane adsorbed on solids were investigated. The solids used were dielectrics (SiO2, silica-alumina, Al2O3, KF), semiconductors (ZnO, NiO), and metals (Pt, Pd). The samples were irradiated by γ-rays from Co60 at a dose rate... (Read more)
- 62. Sov. Phys. Solid State 8, 1842 (1967) , “REORIENTATION OF THE JAHN-TELLER DISTORTION IN NITROGEN IMPURITY CENTERS IN DIAMOND”, L. A. Shulman, I. M. Zaritskii, G. A. Podzyarei
- 63. Phys. Rev. 155, 802 (1967) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair”, G. D. Watkins.An EPR spectrum produced in aluminum-doped silicon by 1.5-MeV electron irradiation is described. Labeled Si G9, it is identified as arising from an aluminum-vacancy pair, presumably formed when a mobile lattice vacancy is trapped by substitutional aluminum. The resonance is observed only upon... (Read more)
- 64. Phys. Lett. A 25, 726 (1967) , “Die bildung paramagnetischer zentren längs der reichweite von protonen in silizium”, H. Lütgemeier and K. SchnitzkeA new isotropic center S2 is observed at the end of the range of photons in silicon. By etching the irradiated samples in steps of a few microns, the dependency of the production rate of the centers S1, S2, P1 and P3 was investigated. (Read more)
- 65. Phys. Lett. 25A, 232 (1967) , “Paramagnetic Centres in Proton-Irradiated Silicon”, H. Lütgemeier and K. SchnitzkeAs in the case of neutron irradiation P1, P3 and P6 centres occur in silicon after irradiation with protons of 3 MeV. A new centre is observed which is axially symmetric along the [111] axis and has the eigenvalues g|| = 2.0010 and g = 2.0103. (Read more)
- 66. J. Catalysis 9, 331-335 (1967) , “ESR evidence of CO oxidation by more than one oxygen species sorbed on ZnO”, Kenneth M. SancierAn approach is described for investigating the nature of sorbed oxygen species on a semiconductor catalyst surface and for determining their relative reactivities in a heterogeneous oxidation reaction. Experimental information as to the types of oxygen species on ZnO with presorbed oxygen, ZnO... (Read more)
- 67. J. Appl. Phys. 38, 337 (1967) , “Electron Spin Resonance in Semiconducting Diamonds”, M. D. BellElectron spin resonance (ESR) was studied in five semiconducting diamonds in the temperature range 108°370°K and at 4.2°K. The g factor is 2.0030±0.0003, and the linewidth varies from 0.3 to 8 Oe at room temperature. The number of spins contributing to the ESR... (Read more)
- 68. Brit. J. Appl. Phys. 18, 1029 (1967) , “The dynamic Jahn - Teller and other effects in the high-temperature electron spin resonance spectrum of nitrogen in diamond”, J. H. N. Loubser, W. P. van RyneveldThe re-orientation of the Jahn-Teller distortion of the C-N bond in diamond containing substitutional nitrogen was observed, through its effect on shape of the hyperfine lines of the nitrogen electron spin resonance spectrum, in the range 600-1230°K. The weak satellite lines due to... (Read more)
- 69. Sov. Phys. Solid State 9, 1545 (1968) , “EXCHANGE PAIRS OF NITROGEN IMPURITIES IN DIAMOND”, L. A. Shulman, I. M. Zaritskii, K. A. Tikhonenko
- 70. Sov. Phys. Semicond. 2, 688 (1968) , “Electron Paramagnetic Resonance of Boron in Dislocation-Free Silicon Crystals”, B. G. Zhurkin, N. A. Penin, N. N. Sibeldin.A study was made of the dependence of the EPR line of boron in uncompensated p-type silicon on the uniaxial compression, the concentration of boron in dislocation-free crystals, and on the dislocation density. It was found that an increase in the concentration of boron from 2・1016 to 1.5・1018 cm-3 broadened the resonance line. When the dislocation density was increased from zero to 2・105 cm-2, the resonance line broadened to more than twice its original width. The experiments were carried out at T = 4.2ºK and the compressive forces were applied along the [111] and [110]. The line width was practically independent of the direction of compression. The results obtained were in qualitative agreement with the theory.
- 71. Solid State Commun. 6, 457-459 (1968) , “The cubic field parameter of ions in zinc oxide crystals”, A. HausmannZnO single crystals doped with Fe3+ or Mn2+ have been investigated by ESR at 35 kMc/s. The cubic field parameter |a| has been determined with greater accuracy than before. The values are |a| = 7.1 G and |a| = 46.8 G for Mn2+ and Fe3+ respectively. Further, considerations about the macroscopic... (Read more)
- 72. Phys. Rev. 170, 705 (1968) , “Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of Silicon”, D. Haneman.EPR measurements have been made on aligned cleavage faces of Si, prepared and studied in high vacuum (<10-9 Torr). The signal, observable after accumulation, is a single line at g=2.0055 with width 6 G, similar to that from vacuum-crushed powders. It is unaffected by oxygen exposures... (Read more)
- 73. Phys. Rev. 174, 881 (1968) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs”, Edward L. Elkin and G. D. WatkinsTwo EPR spectra are observed in irradiated silicon (designated Si-G23 and Si-G24) which are identified with the neutral charge states of a lattice vacancy adjacent to a substitutional arsenic or antimony atom, respectively. EPR and ENDOR studies reveal a high degree of similarity between these... (Read more)
- 74. J. Phys. Chem. Solids 29, 1369-1375 (1968) , “Paramagnetic resonance of ZnO:Mn++ single crystals”, A. Hausmann , H. HuppertzZnO single crystals doped with Mn++ have been investigated by ESR at 9.5 and 35 kMc/s. The measured spectra show minimal linewidth of 0.25 G. The resonances can theoretically be described by a spin Hamiltonian of axial symmetry of which the parameters have been determined with great accuracy.... (Read more)
- 75. J. Phys. Chem. Solids 29, 1407-1429 (1968) , “The structure of the paramagnetic lithium center in zinc oxide and beryllium oxide”, O. F. SchirmerIf ZnO and BeO crystals containing Li are irradiated with u.v. or X-rays, a paramagnetic defect center is created consisting of a hole captured at an O2− ion next to a substitutional Li+ impurity. Because of the polarity of the crystals, the hole assumes its lowest energy, if the... (Read more)
- 76. J. Catalysis 11, 317-325 (1968) , “ESR studies on ZnO---Cr2O3 catalysts”, M. RlekW. Gunsser , A. KnappwostThe effects of the conditions of preparation of ZnO---Cr2O3 catalysts on their ESR spectra have been investigated by means of a Q-band spectrometer. The linewidths of oxides prepared by a low-temperature decomposition of the respective hydroxides in nitrogen flow are large and exhibit concentration... (Read more)
- 77. J. Catalysis 12, 278-280 (1968) , “An ESR investigation of nitrobenzene adsorbed on zinc oxide”, V. V. Subba Rao, R. D. Iyengar and A. C. ZettlemoyerAn ESR study of the interaction of nitrobenzene with nonstoichiometric ZnO surfaces was made. A 3-line spectrum with g values 1.9840, 2.0055 and 2.0225 was observed and was identified as due to nitrobenzene anion radicals strongly held to the surface. An unidentified signal at g = 2.0050 was left... (Read more)
- 78. Surf. Sci. 13, 251-262 (1969) , “ESR studies of the interaction of O2, NO2, N2O, NO and Cl2 with zinc oxide”, R. D. Iyengar, V. V. Subba Rao , A. C. ZettlemoyerAn electron spin resonance study of the surface interaction of zinc oxide with oxygen, oxides of nitrogen (NO2, NO and N2O) and chlorine was made. Characteristic spectra obtained following adsorption of NO2 and NO were analyzed and attributed to rigidly adsorbed neutral molecules. Confirmation of... (Read more)
- 79. Sov. Phys. Solid State 10, 1789 (1969) , “THE STATE OF NITROGEN IMPURITIES IN SYNTHETIC DIAMONDS”, E. V. Sobolev, Yu. A. Litvin, N. D. Samsonenko, V. E. Ilin, S. V. Lenskaya, V. P. Butuzov
- 80. Sov. Phys. Solid State 11, 1104 (1969) , “ELECTRON PARAMAGNETIC RESONANCE OF IONIZED NITROGEN PAIRS IN DIAMOND”, M. Ya. Shcherbakova, E. V. Sobolev, N. D. Samsonenko, V. K. Aksenov
- 81. Solid State Commun. 7, 579-583 (1969) , “Paramagnetic resonance of Gd3+ in ZnO”, A. HausmannZnO single crystals doped with Gd3+ by diffusion have been investigated by ESR at 35kMc/s. The spectra can be understood by a spin-Hamiltonian of axial symmetry. Further, a hyperfine interaction with odd Gd isotopes has been detected. An asymmetry of one set of finestructure lines indicates a... (Read more)
- 82. Solid State Commun. 7, 651-655 (1969) , “Elektronenspinresonanz an kupferdotierten ZnO-einkristallen”, I. Broser and M. SchulzESR-Untersuchungen wurden an ZnO:Cu-Einkristallen zwischen 4,2 und 1,5°K durchgeführt. Die den natürlich vorkommenden Isotopen 63Cu und 65Cu entsprechenden Hyperfeinstrukturlinien hatten eine deutlich geringere Linienbreite verglichen mit bisherigen Messungen. Die... (Read more)
- 83. Solid State Commun. 7, ⅱ‐ⅲ (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G Ribbing
- 84. Phys. Rev. Lett. 23, 581 (1969) , “Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide”, M. H. Brodsky and R. S. TitleThe g values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a... (Read more)Ge Si SiC| EPR| Carbon D Germanium Silicon amorphous dangling-bond .inp files: Si/amorphous | last update: Takahide Umeda
- 85. Phys. Rev. 184, 739 (1969) , “Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR Measurements”, Edward B. Hale and Robert Lee MieherThe hyperfine interactions of Si29 lattice nuclei with ground-state donor electrons in arsenic-, phosphorus-, and antimony-doped silicon have been measured by electron-nuclear double resonance (ENDOR). Hyperfine constants are reported for each donor for about 20 shells containing a total... (Read more)
- 86. J. Phys. Chem. Solids 30, 2419-2425 (1969) , “ESR-resonances in doped GaAs and GaP*1”, S. Haraldson , C-G. RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system GaP:Si... (Read more)
- 87. J. Appl. Phys. 40, 3879 (1969) , “Three New Electron Spin Resonance Centers in Electron-Irradiated Silicon”, H. Horiye and E. G. WiknerElectron spin resonance (ESR) has been effectively used to study irradiation effects in silicon crystals. A good review paper on this subject is that of Watkins in which he lists 27 centers observed in irradiatedsilicon. The present paper describes three more centers which have not previously been... (Read more)
- 88. J. Appl. Phys. 40, 4902 (1969) , “EPR Study of Lithium-Diffused, Mn-Doped GaAs”, Reuben S. TitleAn EPR study of the Mn spectra in Li-diffused Mn-doped GaAs is presented. The EPR spectra show that the symmetry at the Mn site is orthorhombic. This thus indicates association between the Mn and Li impurities. A model is proposed which is consistent with the observed symmetry at the Mn site, the... (Read more)
- 89. Appl. Phys. Lett. 15, 208 (1969) , “Electron Paramagnetic Resonance of Defects in Ion-Implanted Silicon”, K. L. Brower, F. L. Vook, and J. A. BordersThe first EPR measurements of the identity of defects in an ion-implanted layer (< 15 000 Å) are reported. The SiP3 center is the dominant paramagnetic defect produced at room temperature by 400-keV O+ implantation in Al- and B-doped Lopex Si, and it anneals below 200°C. The... (Read more)
- 90. Appl. Phys. Lett. 15, 267 (1969) , “Electron Paramagnetic Resonance in Ion Implanted Silicon”, D. F. Daly, K. A. Pickar.Electron paramagnetic resonance spectra of radiation damage centers in silicon have been observed following implantation with nitrogen and phosphorous ions. Two of these spectra have narrow lines and can be fitted to anisotropic g-tensors and zero field splitting tensors. One is a new... (Read more)
- 91. Surf. Sci. 21, 1-11 (1970) , “ESR investigation of photodamage to zinc oxide powders*1”, K. M. SancierThe esr technique was used to investigate the effects of iron cyanide surface additives on photodamage to ZnO in powder form. The photodamage was monitored by the resonance at a g value of about 1.96, which is comprised of two independent resonances with g values of 1.9564 and 1.9600. The intensity... (Read more)
- 92. Sov. Phys. JETP 31, 677-679 (1970) , “Electron Paramagnetic Resonance in Plastically Deformed Silicon”, V. A. Grazhulis, Yu. A. Osipyan.Lightly doped silicon crystals were investigated experimentally by the electron paramagnetic resonance method. Paramagnetic centers, generated during plastic deformation of these crystals, were detected. The concentration of these centers increased monotonically with increasing degree of deformation. The EPR spectrum of these centers was anisotropic and had a partially resolved fine structure. The centers werestrongly annealed only at temperature T ≧ 600ºC and the activation energy of the annealing process was ~2 eV. It was concluded that these centers were due to electrons of broken bonds in the cores of dislocations with edge components.
- 93. Solid State Commun. 8, 1103-1106 (1970) , “ESR studies of Yb3+ impurities in zinc oxide”, P. Schreiber , A. HausmannIn zinc oxide single crystals after diffusion with Yb2O3 two ESR spectra of Yb3+ ions have been observed which are attributed to substitutional and possibly interstitial ions. The parameters of the spin Hamiltonian have been determined taking into account third order corrections and a relatively... (Read more)
- 94. Solid State Commun. 8, 1359-1361 (1970) , “Electron paramagnetic resonance associated with Zn vacancies in neutron-irradiated ZnO”, A. L. Taylor, G. Filipovich and G. K. LindebergLines in the EPR spectrum of ZnO crystals irradiated by 3.6 × 1018cm−2 fast neutrons are ascribed to holes on oxygen atoms in the basal plane of O4 tetrahedra which surround Zn vacancies. (Read more)
- 95. Solid State Commun. 8, 45-47 (1970) , “A note on the splitting of the ( →← -) line in the ESR spectrum of Fe3+ in ZnO”, I. D. Campbell , J. O. CopeIons of spin which occupy inequivalent cation sites in a wurtzite lattice show ESR line splitting. An analytical expression is derived which describes the dependence of the splitting of the ( →← -) line on crystal orientation. This expression provides a convenient method of deducing... (Read more)
- 96. Phys. Rev. B 1, 1908 (1970) , “Electron Paramagnetic Resonance of the Aluminum interstitial in Silicon”, Keith L. BrowerElectron-paramagnetic-resonance spectra of the Al++ interstitial (Si-G18) produced in aluminum-doped (p-type) silicon by room temperature or 4K electron irradiations are presented and show that the Al++ is located in the tetrahedral interstitial site. The hyperfine... (Read more)
- 97. Phys. Rev. B 1, 1986-1994 (1970) , “Electron Paramagnetic Resonance of V3 + Ions in Zinc Oxide”, G. Filipovich, A. L. Taylor, R. E. CoffmanThe paramagnetic resonance of trace amounts of V3+ in single-crystal hexagonal zinc oxide is reported. The EPR spectrum is fitted with an axially symmetric spin Hamiltonian with five empirically determined parameters: D, gII, g?, A, and B. The spin-Hamiltonian... (Read more)
- 98. Phys. Rev. B 1, 4071 (1970) , “Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in Silicon”, G. D. Watkins and Frank S. HamElectron-paramagnetic-resonance (EPR) and electron-nuclear double-resonance (ENDOR) spectra are reported for the first time for the isolated interstitial lithium shallow-donor center in silicon. In zero applied stress the EPR spectrum is complicated because of the fivefold orbital degeneracy... (Read more)
- 99. Phys. Rev. B 2, 4110 (1970) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon”, B. Goldstein.Single-crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ? 1017/cm3, irradiated with 1-1.5-MeV electrons, and the ensuing defects studied by EPR and electrical measurements. The presence of oxygen strongly affects the properties of... (Read more)Si| EPR electron-irradiation| Lithium RCA3 RCA4 n-type .inp files: Si/Li3 Si/Li4 | last update: Takahide Umeda
- 100. Phys. Lett. A 31, 147-148 (1970) , “ESR of electron irradiated ZnO confirmation of the F+ center”, J. M. Smith , W. E. VehseIrradiation of single crystals of ZnO with 2 MeV electrons produces a defect which has been identified by its ESR spectrum as an F+ center. A correlation between this center and the radiation induced optical absorption has been observed. (Read more)
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