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- 701. Solid State Commun. 60, 867-870 (1986) , “Antisite defects in plastically-deformed GaAs: An alternative analysis”, R. BrayA revision is presented of the accepted view that the observed increease in electron paramagnetic resonance (EPR) with plastic deformation in GaAs is due to the generation of As antisite defects. It is proposed instead that only compensating deep acceptor defects are generated. The increase of the... (Read more)
- 702. Solid State Commun. 58, 811 (1986) , “ESR Investigation of MnCu Pairs in Silicon”, H. Dietrich, H. Vollmer and R. LabuschThe new ESR spectra are observed after co-diffusion of Mn and Cu in Si. The experimentally observed spins are interpreted as (MnCu)+ and (MnCu)−-pairs with axial (1 1 1)-symmetry. To our knowledge these are the first ESR-identified, Cu-related centres in silicon. (Read more)
- 703. Sov. Phys. JETP 64, 612 (1986) , “Spin-Dependent Effects Due to Triplet Centers in Irradiated Silicon”, L. S. Vlasenko, M. P. Vlasenko, V. N. Lomasov, V. A. Khramtsov.A study has been made of the optical polarization of nuclei and spin-dependent photoconductivity in silicon crystals containing structural defects which are in excited triplet states when illuminated, with a nonequilibrium distribution of the populations of magnetic sublevels. Mixing of triplet states differing iin spin projection is necessary for the onset of an optical polarization of nuclei as the nuclei participate in a hyperfine interaction with the triplet centers. A correlation is found between the angular distribution and the temperature dependence of the intensities of the ESR lines of triplet centers and of the degree of optical polarization of the nuclei. It is shown that the saturation of the ESR transition of the triplet centers leads to a change in the photoconductivity of silicon crystals. A similar change in photoconductivity is obsserved at anticrossing of the magnetic sublevels of triplet centers.
- 704. Sov. Phys. Semicond. 20, 688 (1986) , “Spin-Dependent Recombination and Low-Frequency ESR Spectroscopy of Impurities and Defects in Silicon”, L. S. Vlasenko, V. A. Khramtsov.the change in the photoconductivity of silicon crystals due to saturation of ESR transition in paramagnetic recombination centers was used to record the ESR spectra of radiation defects in weakly irradiated silicon crystals. The ESR spectra of samples with defect concentration below 1012 cm-3 were recorded on the basis of a change in the Q factor of the spectrometer resonator because of a change in the photocarrier density at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photocarrierdensity at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photoconductivity of the samples were detected in the absence of a resonance alternating field at values of a static magnetic field corresponding to the points of intersection of magnetic sublevels of the paramagnetic centers with spin S > 1/2. The proposed experimental method was used to record a number of new ESR spectra of irradiated silicon crystals.
- 705. Sov. Phys. Solid State 28, 1862 (1986) , “Electron States Having Spin S ≥ 1 at Dislocations in Silicon”, M. N. Zolotukhin.The kinetics of restoration of the ESR spectrum fine structure lines in silicon crystals containing dislocations is the same for bound spins at dislocations as for the ESR dark spectrum of broken (dangling) bonds at dislocations after illumination of the crystal has ended. It is of the barrier type and is controlled by hole capture at the broken-bond level. The fine structure of the dislocation ESR spectrum is determined by the defect structure of the dislocations, which depends considerably on the way in which they were formed in the crystals.
- 706. Superlatt. Microstruct. 2, 273-278 (1986) , “Electron states in GaAs/Ga1−xAlxAs heterostructures: Subband Landau-levels*1”, G. Lommer, F. Malcher and U. RösslerNonparabolicities (3,4) of the bulk band structure are taken into account in the calculation of subband Landau-levels in the n-inversion layer of GaAs/Ga1−xAlxAs heterostructures. We calculate the deviation of the cyclotron mass from the isotropic parabolic band case (2) for magnetic fields... (Read more)
- 707. Appl. Phys. Lett. 47, 970 (1985) , “Identification of EL2 in GaAs”, H. J. von Bardeleben, D. Stievenard, J. C. Bourgoin, A. HuberCombining electron paramagnetic resonance under optical excitation, deep level transient spectroscopy, electron irradiation, annealing, and quenching on LEC semi-insulating GaAs and lightly Si-doped material grown in the same way as the semi-insulating material, we have shown that (i) the irradiated... (Read more)
- 708. Appl. Phys. Lett. 46, 781 (1985) , “Photoresponse of the AsGa antisite defect in as-grown GaAs”, M. Baeumler, U. Kaufmann, and J. WindscheifThe photoresponse of the As + Ga" align="middle"> antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown semi-insulating GaAs as a function of illumination time and photon energy h. The As + Ga" align="middle"> EPR signal intensity... (Read more)
- 709. J. Phys. C: Solid State Phys. 18, 2623 (1985) , “Magnetic resonance spectroscopy in semiconducting diamond”, C. A. J. Ammerlaan, R. van KempIn type-IIb semiconducting diamond an electron paramagnetic resonance spectrum, which is labelled C-NL1, is observed. For detection of the resonance low sample temperatures (T<4K) and the application of a large uniaxial stress (P approximately=1 GPa) are required. The spectrum can be analysed... (Read more)
- 710. JETP Lett. 42, 38 (1985) , “Nonresonant Spin-Dependent Conductivity in Silicon”, L. S. Vlasenko, V. A. Khramtsov.A nonresonant change has been discovered in the photoconductivity of irradiated silicon crystals in a weak magnetic field. This new effect is shown to result from a spin-dependent recombination of photoexcited carriers through triplet centers. A change in the photoconductivity in the absence of a resonant alternating magnetic field arises at anticrossing points of magnetic sublevels of triplet centers. (Read more)
- 711. Mater. Res. Soc. Symp. Proc. 46, 525 (1985) , “Electronic Ground State of Iron-Acceptor Pairs in Silicon”, C. A. J. Ammerlaan, J. J. van Kooten.Iron-acceptor impurity pairs, consisting of a positively charged iron ion trapped on an interstitial site in the vicinity of an ionized acceptor, in silicon were observed by electron paramagneric resonance for all common acceptor dopants (B, Al, Ga, In). The Zeeman splittings of these pairs, to which both spin and orbital momenta contribute, cover the range between 1.1 and 6.4. An interpretation of these spectroscopic spliting factors is presented, shich considers the effects of the crystal field - of cubic, axial, or lower symmetry - and of spin-orbit interaction on the 4F ground state of the iron ion in a (3d)7 configuration. It is not due to a dynamical Jahn-Teller effect. nor due to hybridization. Rather, it is proposed that a significant reduction, by about 80%, of the orbital magnetism arises from covalency.
- 712. Mater. Res. Soc. Symp. Proc. 46, 39 (1985) , “Electronic Defect Characterization”, H. G. Grimmeiss.Knowledge concerning the electronic properties of defects is crucial for the understanding of the behaviour of these defects in semiconductors. Considering the important role defects play in most currently used devices it is not surprising that a great number of different measurement techniques have been developed with the aim of not only quantitatively determining the electronic parameters but also of identifying the defect chemically and evaluating the local environment of such defects. In most cases this goal can not be achieved by applying only a single (defect property) measureing technique. In this paper an attempt is made, using two different examples. to show what achivements in defect characterization and identification can be obtained by combining two or more different measurement techniques. The first example is a single substitutional impurity, sulfur in silicon, while the second example deals with a more complex defect, the oxygen-vacancy center in silicon. In both cases a number of techniques such as different junction space charge measurements, Hall effect, absorption, ESR, photo-ESR, ENDOR photoconductivity, irradiaton and annealing processes, and even theory were used to study the defect. The advantages and limitations of various methodologies will be discussed.
- 713. Mater. Res. Soc. Symp. Proc. 46, 263 (1985) , “Identity of the NL8 EPR Spectrum with Thermal Donors in Silicon”, K. M. Lee, J. M. Trombetta, G. D. Watkins.The effect of uniaxial stress on the NL8 EPR spectrum in 450℃ heat-treated silicon containing thermal donors (TD's) is described. Changes in the relative amplitudes of the NL8 spectral components are interpreted as arising from electronic redistribution between the differently oriented defects. These changes are consistant in sign and magnitude with those predicted for TD+ from observed stress effects on the TD IR and DLTS spectra.
- 714. Mater. Res. Soc. Symp. Proc. 46, 237 (1985) , “ENDOR-Investigation of Al++ and Al++-Al- Pairs in Silicon”, J. R. Niklas, J. M. Spaeth, G. D. Watkins.With Electron Nuclear Double Resonance (ENDOR) ligand superhyperfine (shf) interactions were investigated for 7 neighbor shells of the interstitial Al++ center (Si-G18) and for 10 neighbor shells of the Al++-Al- pair center (Si-G19). All shells of the interstitial center exhibit undistorted Td symmetry confirming the defect model derived from earlier experiments. In the pair center the shf interaction of the Al++ with the neighboring Al nucleus shows a pure [111]-symmetry, also the shf interactions with the outer Si-neighbor shells exactly reflect this axial [111]-symmetry of the defect. The magnitude of the quadrupole interaction of the neighboring Al nucleus clearly shows, that this nucleus is a nearest neighbor of the Al++. From the angular dependence and the intensity ratios of ENDOR lines of the pair center it can be excluded that any additional impurity is associated with the Al++-Al- pair at least within the first 3 neighbor shells of the Al++. The influence of the Al- neighbor on the hyperfine axes of the first [111] Si-neighbors is negligible and is also remarkably small for the other Si-neighbors. The magnitudes of the ligand shf interactions gor the pair center are closely related to those of the Al++ center. A comparison of these values for both centers allows a definite assignment of the measured shf interactions to their corresponding neighbor shells for the Al++ center.
- 715. Phys. Lett. A 110, 157 (1985) , “EPR of Neutral Vacancy-Helium Centers in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevIn this letter we report the first observation by EPR of helium-associated defects in solid. Two new (S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and... (Read more)
- 716. Phys. Rev. B 32, 7129 (1985) , “Electron-Nuclear Double Resonance of Titanium in Silicon: 29Si ENDOR”, D. A. van Wezep, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The Si-NL29 EPR spectrum, which is associated with the positive charge state of interstitial titanium in silicon, was investigated by electron-nuclear double resonance. Hyperfine-interaction parameters of 17 shells of silicon neighbors, comprised of 214 atoms, could be determined. These parameters... (Read more)
- 717. Phys. Rev. B 32, 6965 (1985) , “Reduced g factor subband Landau levels in AlGaAs/GaAs heterosructures”, G. Lommer, F. Malcher, and U. RösslerThe reduction of the g factor of subband Landau levels in the n-inversion channel of AlGaAs/GaAs heterostructures, which has been observed in electron-spin-resonance experiments by Stein, von Klitzing, and Weimann [Phys. Rev. Lett. 51, 130 (1983)], can be explained quantitatively by the taking into... (Read more)
- 718. Phys. Rev. B 32, 6571 (1985) , “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon”, P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel.Energy levels of defect states introduced by plastic deformation of n-type silicon have been studied by capacitance transient spectroscopy. From the observed properties of the defects, it is concluded that two different types of defects are produced. The first type is interpreted as point defects... (Read more)
- 719. Phys. Rev. Lett. 55, 2340 (1985) , “Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of EL2?”, G. A. Baraff and M. SchluterWe have used the Green's-function technique to carry out electronic-structure and total-energy calculations for the gallium vacancy in GaAs and for the nearest-neighbor (arsenic vacancy)-(arsenic antisite) pair which results when an adjacent arsenic atom hops over and fills the gallium vacancy. The... (Read more)
- 720. phys. stat. sol. (a) 92, K53 (1985) , “Low Symmetry Centre in Silicon”, A. V. Dvurechenskii, V. V. Suprunchik.Investigation of the defect formation in heavily doped silicon irradiated by high dose of electrons have led to the discovery of new types of defects /1, 2/. The present note is the next one of this series. A new centre is investigated in p-type silicon irradiated by neutrons. (Read more)Si| EPR neutron-irradiation| A5 C1 H8 P3 P6 Sii Vsi interstitial p-type triclinic vacancy .inp files: Si/H8/H8.inp | last update: Takahide Umeda
- 721. phys. stat. sol. (b) 130, K51 (1985) , “New EPR Spectrum in Helium-Implanted Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi, A. A. Kim.Recently /1 to 4/ a unique class of electron-vibronic photoluminescence spectra in silicon has been found. These spectra have been observed exclusively after noble gas (in particular, helium) ion implantation and partial annealing, above 200 ℃. Tkachev et al. /1, 3/ have suggested that noble gas... (Read more)
- 722. Rev. Sci. Instrum. 56, 2050 (1985) , “Application of a microwave preamplifier to an ESR spectrometer”, Günter GramppThe aim of this investigation was to measure the sensitivity improvement reached on a commercial homodyne X-band ESR spectrometer by installing a microwave GaAsFET type preamplifier (8.59.6 GHz). Up to a power level of 1 mW a factor of 3 was obtained in signal improvement.... (Read more)
- 723. Solid State Commun. 53, 1135 (1985) , “Electron Paramagnetic Resonance on Shallow Acceptor Impurities in Silicon”, R. van Kemp, C. A. J. Ammerlaan.The shallow acceptor impurities boron, aluminum, gallium and indium in silicon were investigated by electron paramagnetic resonance (EPR) using a K-band superheterodyne spectrometer. The EPR spectra of these impurities were observed at low temperatures (1.4K < T < 4.2K) under conditions of zero and small values of external uniaxial stress. the observed angular dependence of the resonance lines can be analyzed using the effective spin Hamiltonian H = HB + Hε with J = 3/2 [1], HB = ?, Hε = ?. By making a least squares fit to the experimental data, the g-values g1' and g2' and the deformation potential parameters b' and d' were obtained. Under a variety of conditions peculiar line shapes and width were observed. We considered teh following mechanism to explain the observed characteristics of the resonance lines: double and triple quantum transitions, linear and quadratic effects of strain, dynamic Jahn-Teller distortion, transition probabilities and the effect of relaxation time on spin dynamics. Double and triple quantum transitions can occur in this system because j = 3/2. They can be recognized because their intensity is proportional to the square and the cube, respectively, of the microwave power. However, in the experiment no such dependence on the microwave power was found. The expressions thus obtained can account qualitatively for the line width and asymmetry when it is assumed that the strain distribution in the crystal is approximately Gaussian. These effects can not account for a peculiar narrow dip that is present in the centers of the resonance lines with ΔMj = 1 and ΔMj = 2 [2]. A dynamic Jahn-Teller distortion of the acceptor atoms would have result that there are no sites with strain zero. Together with the random strains present in the crystal, the effect will be a shift of intensity away from the magnetic field at which the center of the line occurs. Calculation of the transition probabilities for the ΔMj = 1, 2, 3 transitions showed that these do not become very small in any of the cases. An explanation of the dip in the center of the resonance line can be offered in the following way [3]. The broad resonance lines for the ΔMj = 1 and ΔMj = 2 transitions are a superposition of spin packets which are shifted due to the random internal strains. For small values of the strains, packets will overlap, allowing a form of cross-relaxation to occur. this results in broadening of the homofeneous width and smaller intensity at the centerof the resonance line. (Read more)
- 724. Sov. Phys. Semicond. 19, 1198 (1985) , “Nonorientable Divacancies in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.The electron spin resonance method was used in na investigation of heavily doped n-type silicon [phosphorus concentration NP = (2-10)×1018 cm-3] irradiated with reactor neutrons in doses 5×1017-4×1019 cm-2. In addition to the spectra of the familiar G7 (divacancy) and P3 (tetravacancy) centers, the investigated samples exhibited two new spectra denoted by H9 and H10. The parameters of the spin Hamiltonian of these spectra were determined. According to the results obtained, the H9 spectrum was due to nonorientable divacancies located in zones of strong lattice deformation zones was ε ≥ 10-3. It was postulated that H10 is a vacancy-type defect with a paramagnetic electron localized on a broken bond of a silicon atom. Some of the characteristics of the P3 and P6 spectra observed for heavily doped n-type silicon indicated that the manifestation of these centers depends on the Fermi level position.
- 725. Sov. Phys. Solid State 27, 1093 (1985) , “Electron Spin Resonance of Strain Probes in Gadolinium-Doped Silicon”, A. A. Buga?, V. E. Kustov, Yu. G. Semenov, V. I. Shakhovtsov, V. L. Shindich.The angular dependences of the ESR line width were studied for interstitial Fe0 and Mn0 in gadolinium-doped silicon. It was found that the addition of gadolinium causes considerable internal elastic deformations of the crystal. A theoretical calculation is given whereby the mean deformation charge density can be determined from the measured ESR line widths of strain--sensitive centers.
- 726. Appl. Phys. Lett. 44, 96-98 (1984) , “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, P. M. Lenahan and P. V. DressendorferWe find that two paramagnetic ``trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures. Applied Physics Letters is copyrighted by The American Institute of Physics. ... (Read more)
- 727. Appl. Phys. Lett. 44, 907 (1984) , “Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs”, K. Elliott, R. T. Chen, S. G. Greenbaum, R. J. WagnerWe have identified the electron paramagnetic resonance (EPR) spectrum of the As on a Ga site (AsGa) defect in bulk undoped liquid encapsulated Czochralski grown GaAs. The intensity of the EPR signal can be correlated with the concentration of compensating carbon acceptors in the GaAs... (Read more)
- 728. J. Appl. Phys. 56, 3394 (1984) , “Electron paramagnetic resonance spectroscopy of fast neutron-generated defects in GaAs”, A. Goltzene, B. Meyer, C. Schwab, S. G. Greenbaum, R. J. Wagner, T. A. KennedyA series of fast neutron-irradiated GaAs samples (neutron fluence range of 2×10152.5×1017 cm2) has been investigated by electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra at 9 GHz exhibit a broad (~1 kG) Lorentzian singlet at... (Read more)
- 729. J. Appl. Phys. 56, 2844-2849 (1984) , “Electronic traps and Pb centers at the Si/SiO2 interface: Band-gap energy distribution”, E. H. Poindexter, G. J. Gerardi, M. -E. Rueckel, P. J. Caplan, N. M. Johnson, D. K. BiegelsenEnergy distribution of Pb centers (·SiSi3) and electronic traps (Dit) at the Si/SiO2 interface in metal-oxide-silicon (MOS) structures was examined by electric-field-controlled electron paramagnetic resonance (EPR)... (Read more)
- 730. J. Appl. Phys. 56, 2655 (1984) , “Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materials”, G. M. Martin, E. Estève, P. Langlade, and S. Makram-EbeidFast neutron irradiation of n-GaAs mainly induces two deep electron traps in the band gap. The first of these is referred to as EL6 and has an energy level at Ec 0.35 eV, where Ec is the conduction band minimum; the second one has a wide... (Read more)
- 731. J. Non-Cryst. Solids 66, 133-138 (1984) , “Local order and defects in MBE-grown a-GaAs”, S. G. Greenbaum, D. J. Treacy, B. V. Shanabrook, J. Comas and S. G. BishopElectron spin resonance (ESR), and 71Ga and 75As nuclear magnetic resonance (NMR) measurements have been performed on a 20μ thick film of a-GaAs deposited on a SiO2 substrate by molecular beam epitaxy. The ESR spectrum exhibits the four-line S=1/2, I=3/2 hyperfine pattern characteristic of the... (Read more)
- 732. J. Phys. C: Solid State Phys. 17, L911 (1984) , “ENDOR Investigation of Se+ in Silicon”, S. Greulich-Weber, J. R. Niklas, J. -M. Spaeth.Se+ donors in silicon from deep level impurities. They were investigated with electron nuclear double resonance (ENDOR). The superhyperfine (SHF) interactions with eight shells of 29Si neighbour nuclei were analysed and it was confirmed that the electron spin is... (Read more)
- 733. J. Phys. C: Solid State Phys. 17, L233 (1984) , “Persistent spectral hole burning of colour centres in diamond”, R. T. Harley, M. J. Henderson, R. M. MacfarlaneFour zero-phonon lines of defect centres in diamond (GR1 (741 nm), N-V (637 nm), H4 (496 nm) and N3 (415 nm)) have been shown to exhibit persistent spectral hole burning. The phenomenon appears to be a rather general one in diamond and should prove very powerful for elucidation of the nature of... (Read more)
- 734. J. Phys. Chem. 88, 5255-5260 (1984) , “Dynamic Interchange among Three States of Phosphorus (4+) in ?-Quartz. 2.”, Y. Uchida, J. Isoya, J. A. WeilThe dynamic process due to electron jumping among three states with different sp hybrid directions in the quasitetrahedral P4+ center [PO4]0 in a-quartz has been investigated by 10-GHz electron paramagnetic resonance, over the temperature range 40 to 400 K. The relative populations (mole fractions ƒІ and ƒІІ) of the ground state P(І) and two degenerate thermally excited states P(ІІ) were determined from the measured EPR absorption line intensity ratios and from the line positions of the averaged state P(A), respectively, in the slow and fast kinetic regions. The temperature dependence of the mole fractions has been explained by considering vibrational sublevels in the potential well describing each state. The jump rate was also obtained, via EPR absorption line-width analysis based on the Bloch equations, in both the slow and the fast regions. The characteristic parameters of the dynamic process, Le., energy separation and vibrational sublevels of the ground and excited states, and barrier height between these, have been determined. (Read more)
- 735. Nucl. Instrum. Methods Phys. Res. B 1, 427-430 (1984) , “Fast neutron damage in tetrahedral ANB8−N Compounds: Effects of ionicity”, A. Goltzene, B. Meyer , C. SchwabIrradiation of crystals with neutrons of high energy leads to the formation of different types of defects, such as point defects or extended defects, like clusters or even amorphous regions in the displacement spike. Their nature and their creation yields depend on the chemical nature of the... (Read more)
- 736. Phys. Rev. B 30, 931 (1984) , “Optical-pumping study of spin-dependent recombination in GaAs”, Daniel PagetOptical-pumping techniques provide a convenient way to study-dependent recombination (SDR) processes at deep impurity centers in semiconductors. Indeed, by changing the polarization of excitation light, it is possible to modify the photoelectron spin polarization in a controlled way. This produces a... (Read more)
- 737. Phys. Rev. B 30, 6292 (1984) , “Electron Nuclear Double Resonance of Interstitial Iron in Silicon”, S. Greulich-Weber, J. R. Niklas, E. R. Weber, J. -M. Staeth.We report on the first electron nuclear double-resonance investigation of an interstitial deep-level defect in silicon. For interstitial iron the superhyperfine interactions with six shells of neighbor nuclei comprising 42 silicon atoms could be resolved and determined. The localization of the two... (Read more)
- 738. Phys. Rev. B 30, 4564 (1984) , “Electron Paramagnetic Resonance on Iron-Acceptor Pairs in Silicon”, J. J. van Kooten, G. A. Weller, and C. A. J. AmmerlaanExperimental data obtained by electron paramagnetic resonance on silicon doped with aluminum and iron are presented. After quenching the sample and a short stay at room temperature, two spectra, labeled Si-NL27 and Si-NL28, were observed. It is concluded that the spectra originate from two Fe-A1... (Read more)
- 739. Phys. Rev. B 29, 2819 (1984) , “Electron Paramagnetic Resonance of Pt- in Silicon: Isolated Substitutional Pt Versus Pt-Pt Pairs”, R. F. Milligan, F. G. Anderson, G. D. Watkins.We report a study of the EPR line shape for Pt- in silicon as a function of the relative abundance of the magnetic (I=1/2) isotope 195Pt. The structure recently noted by Henning and Egelmeers [Phys. Rev. B 27, 4002 (1983)] is insensitive to the 195Pt abundance and... (Read more)
- 740. Phys. Rev. Lett. 53, 1187 (1984) , “Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAs”, D. M. Hofmann, B. K. Meyer, F. Lohse, and J. -M. SpaethThis Letter reports on the first optically detected electron-nuclear double-resonance (ENDOR) measurements of a paramagnetic semiconductor defect in which ligand hyperfine interactions could be resolved. In semi-insulating GaAs: Cr the ENDOR lines of the first-shell 75As neighbors of the... (Read more)
- 741. Phys. Rev. Lett. 52, 851 (1984) , “Optical Properties of As-Antisite and EL2 Defects in GaAs”, B. K. Meyer, J.-M. Spaeth, M. SchefflerThis Letter reports the first application of an ESR-tagged magnetic circular dichroism measurement to a paramagnetic deep-level defect in a semiconductor. In semi-insulating GaAs two new absorption bands are found at 1.05 and 1.29 eV. Both bands are identified as intracenter electronic transitions... (Read more)
- 742. phys. stat. sol. (a) 86, 313 (1984) , “New EPR Defects in Si<Al>”, A. V. Dvurechenskii, B. P. Kashnikov, V. V. Suprunchik.Two new paramagnetic centres, labeled Si-H5 and Si-H6 are found in silicon containing aluminium (6 × 1017 to 5 × 1018 cm-3) and irradiated with high dose of 1 Me V electrons (up to 2 × 1020 cm-2). Spin-Hamiltonian constants of the Si-H5... (Read more)
- 743. phys. stat. sol. (a) 82, 533 (1984) , “The Effect of Heat Treatment on Compensated CZ Silicon”, P. I. Baranskii, V. M. Babich, N. P. Baran, A. A. Bugay, Yu. P. Dotsenko, V. B. Kovalchuk.Thermally induced donors in Czochralski-grown p-Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed. (Read more)
- 744. Solid State Commun. 51, 951 (1984) , “Electron Paramagnetic Resonance of a Nitrogen-Related Centre in Electron Irradiated Silicon”, M. Sprenger, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanThe observation by electron paramagnetic resonance of a centre related to nitrogen as an impurity in silicon is reported. While all previously reported nitrogen-related centres in silicon were produced by nitrogen implantation, the present centre is observed after electron irridiation of... (Read more)
- 745. Solid State Commun. 51, 665 (1984) , “ESR of Selenium Pairs (Se+2) in Silicon”, R. Wrner, O. F. Schirmer.A slight anisotropy of the Se+2 ESR is resolved, revealing [111] axial symmetry. The pair groundstate is a2u in D3d symmetry, consistent with the almost complete s-character at the Se sites. The value of g|| is correlated with the binding energy of... (Read more)
- 746. Sov. Phys. Semicond. 18, 49 (1984) , “Influence of rare-earth elements on the carrier mobility in epitaxial InP and InGaAs films”, N. T. Bagraev, L. S. Vlasenko, K. A. Gatsoev, A. T. Gorelenok, A. V. Kamanin, V. V. Mamutin, B. V. Pushny, V. K. Tibilov, Yu. P. Tolparov, A. E. Shubin
- 747. Sov. Phys. Semicond. 18, 162 (1984) , “Problem of the charge state of manganese impurities in GaAs:Mn”, D. G. Andrianov, Yu. A. Grigor'ev, S. O. Klimonski?, A. S. Savel'ev, S. M. Yakubenya
- 748. Sov. Phys. Semicond. 18, 1102 (1984) , “Electron Spin Resonance of Defects in Si:Al Irradiated with Large Electron Doses”, A. V. Dvurechenski?, B. P. Kashnikov, V. V. Suprunchik.Silicon containing aluminium in concentrations 6×1017-5×1018 cm-3 and irradiated with 1MeV electrons in doses of 1×1018-2×1020 cm-2 was found to have a new paramagnetic center designated H5. The ESR method was used to analyze the structure of the H5 center, which showed that the center has a spin of 1/2 and a {110} symmetry. The principal components of the g tensor and their orientations relative to the crystallographic axis were determined: g1=2.0063, g2=2.0005, g3=2.0036(±0.0001), θ=13±2°, where θ is the angle between the [110] and g1 directions, where both g1 and g2 lie in a (110) plane and g3||[110]. A hyperfine structure appeared because of the interaction of an unpaired electron with two inequivalent nuclei of the 29Si isotope and with the 27Al nucleus. The constant of the hyperfine interaction with the 27Al nucleus was (4.0±0.7)×10-4 cm-1. The hyperfine initeraction tensor for one of the 29Si nuclei was found to be axially symmetric and its principal values were detemined: A⊥=41.6×10-4 and A||= 62.5×10-4 cm-1. The densities of the wave function of the unpaired electron at each of the 29Si atoms(~24ï¼…) of which 15ï¼… is in the s state and 85ï¼… in the p state) and at 27Al(0.3ï¼…) were found. An analysis of the results obtained led to the conclusion that the H5 center consists of a divacancy and an interstitial aluminium atom located in a {110} plane. The unpaired electron is located on an extended orbital of the divacancy (representing about 50ï¼… of the wave funcrion densiry.
- 749. Sov. Phys. Solid State 26, 66 (1984) , “EPR Study of Si-S1-Center Optical Excitation and Relaxation Processes in Irradiated Silicon”, L. S. Vlasenko, I. M. Zaritskii, A. A. Konchits, B. D. Shanina.For the first time transition processes in the excited state of the neutral oxygen-containing vacancy in silicon (Si-S1 center) were studied by EPR over a wide temperature range (2.5-100 K). By comparing the experimental results with theory, it was established that the formation of the excited triplet state occurs with participation of photoexcited current carriers in contrast with a number of similar systems where excitation takes place within the centers. The different spins in the triplet state are due to the selective nature of their decay processes while the formation processes are nonselective. The temperature dependence above 20 K of dynamic system characteristics is determined by the inclusion of an intrinsic spin-relaxation mechanism of triplet states.
- 750. Surf. Sci. 141, 255-284 (1984) , “X AND K BAND ESR STUDY OF THE Pb INTERFACE CENTRES IN THERMALLY OXIDIZED p-TYPE (001)Si WAFERS AT LOW TEMPERATURES AND INFLUENCE OF MEDIUM-DOSE As+ ION IMPLANTATION”, A. Stesmans, J. Braet, J. Witters, R. F. DekeersmaeckerElectron spin resonance (ESR) experiments have been carried out at cryogenic temperatures (4.2 T 35 K) and room temperatures at 9.0 and 20.9 GHz on the Pb0 and Pb1 (commonly referred to as Pb) spin-active defects residing at the Si/SiO2 interface. The ESR lineshapes were shown to display gaussian... (Read more)
- 751. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 752. Appl. Phys. Lett. 43, 563-565 (1983) , “Characteristic electronic defects at the Si-SiO2 interface”, N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, P. J. CaplanOn unannealed, thermally oxidized silicon, electron spin resonance reveals an oriented interface defect which is termed the Pb center and identified as the trivalent silicon defect. Deep level transient spectroscopy (DLTS) reveals two broad characteristic peaks in the... (Read more)
- 753. Appl. Phys. Lett. 43, 1111 (1983) , “29Si hyperfine structure of unpaired spins at the Si/SiO2 interface”, K. L. BrowerThe hyperfine spectrum associated with unpaired electrons at the (111) Si/SiO2 interface (Pb centers) is reported for the first time. Electron paramagnetic resonance measurements indicate that the hyperfine interaction S··I arises from the... (Read more)
- 754. J. Appl. Phys. 54, 6594 (1983) , “Electron Spin Resonance Study of Oxygen Donors in Silicon Crystals”, M. Suezawa, K. Sumino, M. Iwaizumi.Measurements have been conducted on the electron spin resonance due to various types of oxygen donors (thermal, new, and deformation-induced donors) in Czochralski-grown silicon crystals of n type. g tensors determined for these donors all coincide well with that for phosphorus, the... (Read more)
- 755. J. Non-Cryst. Solids 58, 165-178 (1983) , “Electron paramagnetic resonance of Cu2+ and V4+ ions in borate glasses”, L. D. Bogomolova , V. A. JachkinThe EPR spectra of Cu2+ and V4+ ions have been studied in binary RO---B2O3 glasses (where R = Ba, Sr, Pb and Zn) and in ternary PbO---ZnO---B2O3 glasses. The main results of an EPR study of alkali-borate glasses are briefly reviewed. Three distinct EPR spectra of Cu2+ ions in barium-borate glasses... (Read more)
- 756. J. Phys. C: Solid State Phys. 16, 1501 (1983) , “Electron spin resonance of a di-nitrogen centre in Cape yellow type Ia diamonds”, J. A. van Wyk, J. H. N. LoubserA di-nitrogen centre has been observed in gem quality Cape yellow diamonds while illuminated with ultraviolet light. Analysis of the spectrum shows that the paramagnetic electron is localised on two neighbouring nitrogens along (111) directions, which suggests that it is most likely a derivative of... (Read more)
- 757. Phys. Lett. A 99, 117 (1983) , “Low-Symmetry EPR Center in Hydrogen-Implanted Silicon”, Yu.V. Gorelkinskii, N.N. NevinnyiA new S = 1/2 EPR spectrum, labeled Si-AA2, arises from a negative-charge-state defect which has a low symmetry(C1). It is produced in crystalline silicon by hydrogen implantation at ≈20°C followed by annealing at ≈580°C and disappears completely at 700°C. The kinetics... (Read more)Si| EPR ion-implantation| 29Si AA2 C1 Hydrogen Si-H Vsi cluster(>3) p-type triclinic vacancy .inp files: Si/AA2/AA2.inp | last update: Takahide Umeda
- 758. Phys. Rev. B 27, 4002 (1983) , “Strain-Modulated ESR Study of Pt- in Silicon”, J. C. M. Henning, E. C. J. Egelmeers.Early electron-spin-resonance (ESR) studies by Woodbury and Ludwig on the Pt acceptor in Si have been refined and extended. The strain dependence of the spectroscopic splitting tensor g? has been measured using the strain-modulated electron-spin-resonance technique. The symmetry of the center proves... (Read more)
- 759. Phys. Rev. Lett. 51, 130 (1983) , “Electron Spin Resonance on GaAs-AlxGa1-xAs Heterostructures”, D. Stein, K. v. Klitzing, G. WeimannPhotoconductivity measurements on GaAs-AlxGa1-xAs heterostructures with photon energies 0.05 meV<hν<0.14 meV show resonance structures with a half-width of less than 0.002 meV in the magnetic field range 3 T<B<8 T. The resonances are only observed at magnetic... (Read more)
- 760. phys. stat. sol. (b) 119, K117 (1983) , “Gold-related EPR centres of low symmetry in silicon”, M. Höhne.The most important gold-related centre in silicon works incognito: It produces levels which are well known /1/. The acceptor level EC-0.55 eV and the donor level EV+0.35 eV are caused by different states of the same defect, as was als orecentlr affirmed /2, 3/. This defect is... (Read more)
- 761. phys. stat. sol. (b) 115, 443 (1983) , “EPR of Iron-Boron Centres in Silicon”, W. Gehlhoff, K. H. Segsa.The EPR spectra of one type of iron-boron centres detected in low-resistivity B-doped p-silicon after iron doping are investigated in detail. The spectra are characterized by a dominating zerofield splitting and a resolved SHF structure due to the interaction with the boron isotopes and arise from... (Read more)
- 762. Physica 117B&118B, 9 (1983) , “Deep Levels in Semiconductors”, G. D. Watkins.The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states. The interaction at the substitutional site is best considered as an interaction tends to repel deep a1 and t2 levels from the gap. When the levels are present, they are mostly vacancy-like and the defect is likely to display the large lattice relaxations characteristic of the vacancy. (Read more)
- 763. Physica 116B, 583 (1983) , “Investigations of Well Defined Dislocations in Silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. Weber.The velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420ºC in the resolved shear stress range 30<τ<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60º dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on Ï„, but also on the elastic strain of the lattice. In the second part the paper reviews EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 764. Physica 116B, 564 (1983) , “Experimental Tests of Non-Thermal Effect for Pulsed-Laser Annealing by Time-Resolved Reflectivity and EPR Measurements”, K. Murakami, K. Masuda, Y. Aoyagi, S. Namba.Experimental tests of non-thermal effect for pulsed laser annealing (PLA) of semiconductor have been done by means of two techniques. One is time-resolved reflectivity measurement during single 30-ps PLA of amorphous GaAs. An anomalous dynamic behavior is observed at an energy-density window, i.e, a reflectivity dip appears after the disappearance of the high reflectivity phase, concomitant with final production of a new amorphous GaAs state. This result cannot be interpreted in terms of the simple thermal effect. The other is EPR measurement of Si samples which are implanted and then annealed by 40-ns pulsed laser. No EPR results of N donors in Si support positively a non-thermal effect, while it is difficult to explain EPR results of laser-induced paramagnetic defects only by the simple thermal annealing model. (Read more)
- 765. Physica 116B, 332 (1983) , “The Structure of the Pt- Center in Silicon”, J. C. M. Henning.Electron spin resonance (ESR), strain-moduled electron spin resonance (SMESR) and infrared absorption (IR) experiments are reported on the platinum accepter (Pt-) in silicon. It turns out that in the concentration range 1016 < [Pt] < 1017 cm-3 Pt is exclusively present as substitutional-interstitial (Ptb-Pti) pairs. In n-type material the charge state may be either Pt--Ptio or Ptso-Ptio, depending on the Fermi energy. (Read more)
- 766. Physica 116B, 306 (1983) , “ESR of Fe-S Pairs in Silicon”, O. F. Schirmer.The ESR of a new Fe-S center in Si is reported. It is shown that the g-values of three of the known Fe-S pairs are determined by exchange interaction of the angular momentum of Feio with that of a nearby S = 1/2 ion, which is likely to be S+ or (S-S)+. The analysis uses an analogy to the O2--centers in the alkali halides. Orbach relaxation of the ESR of the new Fe-S center shows that an excited state lines 8.4 meV above the groundstate. (Read more)
- 767. Physica 116B, 281 (1983) , “Excited Triplet States of Defects and Optical Nuclear Polarization in Silicon”, L. S. Vlasenko.Using the nuclear magnetic resonance (NMR) and electron spin resonance (ESR) techniques the processes of the optical polarization of the electron and nuclear spinis have been studied iin silicon containing the structure defects of various kinds. It has been established that such structure defects as radiation defects, thermal defects, nad dislocations to be under illumination in photo-excited triplet states with nonequilibrium spin polarizaton are respoonsibke for the appearance of the strong nuclear polarization independent on the light polarization. (Read more)
- 768. Physica 116B, 258 (1983) , “Origin of the 0.97 eV Luminescence in Irradiated Silicon”, K. P. Odonnell, K. M. Lee, G. D. Watkins.Optical detection of magnetic resonance studies are described for the well-studied optical center with zero phonon line at 0.97 eV in irradiated silicon. Analysis of the S = 1 ODMR spin Hamiltonian reveals a low symmetry (C1h) center and a resolved 29Si hyperfine interaction with a single silicon atom. In a specially enriched 13C doped sample we find additional hf interactions with two equivalent carbon atoms. At elevated temperatures, the defect reorients easily from one C1h distortion to another around a common <111> axis; during this reorientation the spin density remains located on the same silicon atom and the same carbon pair. Froom these results we construct a model comprising two adjacent (substitutional) carbon atoms and an interstitial silicon atom which has distorted out from a bond-centered position We conclude that the same defect gives rise to the Si-G11 EPR spectrum when positively charged. (Read more)
- 769. Physica B 116, 583-593 (1983) , “Investigations of well defined dislocations in silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. WeberThe velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420°C in the resolved shear stress range 30 <Ï„<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60° dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on Ï„, but also on the elastic strain of the lattice. In the second part the papers review EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 770. Physica B+C 116, 564-569 (1983) , “Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements”, K. Murakami, K. Masuda, Y. Aoyagi and S. NambaExperimental tests of non-thermal effect for pulsed laser annealing (PLA) of semiconductors have been done by means of two techniques. One is time-resolved reflectivity measurement during single 30-ps PLA of amorphous GaAs. An anomalous dynamic behavior is observed at an energy-density window, i.e.,... (Read more)
- 771. Solid State Commun. 47, 631 (1983) , “Hyperfine Interactions from EPR of Iron in Silicon”, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan, E. R. Wever.At high microwave power very well resolved EPR spectra from isolated neutral interstitial iron atoms in silicon can be observed. From these spectra hyperfine interactions with at least three shells of neighbouring lattice sites, containing 18 or 22 atoms, can be determined. The localization of the... (Read more)
- 772. Solid State Commun. 46, 121 (1983) , “ENDOR Investigation of Tellurium Donors in Silicon”, J. R. Niklas and J. M. SpaethParamagnetic Te+ donors in silicon form deep level impurities. They were investigated with electron nuclear double resonance (ENDOR). The superhyperfine interaction with 12 shells of 29Si nuclei could be determined and it was confirmed that S = 1/2. 10 % of the unpaired spin... (Read more)
- 773. Sov. Phys. Semicond. 17, 796 (1983) , “Investigation of structure defects in the GaAs:Mn system by the ESR method”, V. F. Masterov, S. B. Mikhrin, B. E. Samorukov, K. F. Shtel'makh
- 774. Sov. Phys. Semicond. 17, 412 (1983) , “Excited states of the Fe3+ ion in gallium arsenide and phosphide”, E. S. Demidov, A. A. Ezhevski?, and V. V. Karzanov.
- 775. Appl. Phys. Lett. 41, 542-544 (1982) , “Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface”, P. M. Lenahan and P. V. DressendorferElectron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic Pb centers with bais. We conclude that... (Read more)
- 776. Appl. Phys. Lett. 41, 251-253 (1982) , “Defects and impurities in thermal oxides on silicon”, K. L. Brower, P. M. Lenahan, and P. V. DressendorferOxides grown at 1100 °C in dry oxygen for 60 min to a thickness of 1350 Å on silicon with and without subsequent forming gas anneals were 60Co irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic... (Read more)
- 777. Appl. Phys. Lett. 40, 342 (1982) , “Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors”, J. Lagowski, H. C. Gatos, J. M. Parsey, K. Wada, M. Kaminska, and W. WalukiewiczThe concentration of the major electron trap (0.82 eV below the conduction band) in GaAs (Bridgman grown) was found to increase with increasing As pressure during growth. It was further found that (for a given As pressure) the concentration of this trap decreased with increasing concentration of... (Read more)
- 778. J. Appl. Phys. 53, 6140 (1982) , “Identification of AsGa antisites in plastically deformed GaAs”, E. R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider, T. WosinskiAsGa antisite defects formed during plastic deformation of GaAs are identified by electron paramagnetic resonance (EPR) measurements. From photo-EPR results it can be concluded that the two levels of this double donor are located near Ec 0.75 eV and... (Read more)
- 779. J. Appl. Phys. 53, 4541 (1982) , “Electron paramagnetic resonance of extended defects in semi-insulating GaAs”, A. Goltzene, B. Meyer, and C. SchwabThe temperature dependence, over the 4.2100 K range, of the narrow EPR line, labeled X, with an isotropic value of g = 2.002 has been investigated in a semi-insulating GaAs:Cr sample. From its Curie-Weiss behavior, leading to a (T+13.1)1 law, it is... (Read more)
- 780. J. Cryst. Growth 59, 363-369 (1982) , “Electron spin resonance and cathodoluminescence in ZnO”, T. Wada, S. Kikuta, M. Kiba, K. Kiyozumi, T. Shimojo and M. KakehiThe ZnO samples were prepared by firing at 900°C, finely powdered material under different degrees of reduction. Measurements of the green cathodoluminescence (CL) were done by using a vacuum fluorescent display. The g values of ESR spectrum measured from the powders at 77 K were g|| =... (Read more)
- 781. J. Cryst. Growth 59, 357-362 (1982) , “Magnetic resonance studies of shallow donors in zinc oxide”, C. Gonzalez, D. Block, R. T. Cox and A. HervéShallow donors in ZnO were studied by electron spin resonance (ESR) and optically detected magnetic resonance (ODMR). Indium and gallium donors were identified by their hyperfine structure. They have g|| = 1.957 and g = 1.956 and the hyperfine constants are A(69Ga)=4.2 and A(115In)=36.6 G. The ESR... (Read more)
- 782. J. Phys. C: Solid State Phys. 15, L981 (1982) , “Carbon-12 hyperfine interaction of the unique carbon of the P2 (ESR) or N3 (optical) centre in diamond”, J. A. van WykThe latest model proposed for the P2 centre shows that the paramagnetic electron is associated mainly with one carbon atom. The observation of the carbon-13 hyperfine interaction with this carbon is reported, and the appropriate hyperfine parameters for this interaction are given. (Read more)
- 783. J. Phys. D: Appl. Phys. 15, L183 (1982) , “Optically active nickel in synthetic diamond”, A. T. Collins, P. M. SpearDiamonds grown using a nickel catalyst-solvent have vibronic absorption systems with zero-phonon lines at 1.883 and 2.51 eV, and show absorption at the Raman frequency (1332 cm-1) in the defect-induced one-phonon absorption spectrum. Circumstantial evidence suggests that these... (Read more)
- 784. Nucl. Instrum. Methods Phys. Res. 199, 61-73 (1982) , “Comparison of nuclear and optical methods in the study of amorphized semiconductors and insulators”, Gerhard GötzThe damage and amorphization of implanted silicon is reported. The results of backscattering measurements (RBS) are presented and compared with results of optical measurements and EPR investigations. At low implantation temperatures the amount and depth distribution of the damage can be described by... (Read more)
- 785. Phys. Rev. A 25, 1272 (1982) , “Muonium in diamond”, E. Holzschuh, W. Kündig, P. F. Meier, B. D. Patterson, J. P. F. Sellschop, M. C. Stemmet, H. AppelTwo muonium states have been found in diamond. "Normal" muonium shows an isotropic hyperfine interaction with a coupling constant A/h=3711±21 MHz. "Anomalous" muonium is described by a ?111? axially symmetric spin Hamiltonian with coupling constants extrapolated to 0 K |A?|/h=167.98±0.06... (Read more)
- 786. Phys. Rev. B 26, 6040 (1982) , “Deep-Level Nitrogen Centers in Laser-Annealed Ion-Implanted Silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study dealing with the means for introducing substitutional N into silicon and the structure of N centers is presented in this paper. Nitrogen can be introduced into crystalline silicon by N+ implantation and subsequent pulsed-ruby-laser annealing.... (Read more)
- 787. Phys. Rev. B 26, 2296 (1982) , “Confirmation of the EPR identification of Cr4+ 3d2 in p-type Cr-doped GaAs by means of applied uniaxial stress”, J. J. Krebs and G. H. StaussUniaxial stress has been used to study the isotropic Cr-related EPR center in p-type GaAs: Cr. Stress linearly splits the EPR line into two components, showing that the center is due to substitutional Cr4+ 3d2 rather than interstitial Cr1+ 3d5. The stress... (Read more)
- 788. Phys. Rev. B 25, 7731 (1982) , “Electron paramagnetic resonance parameters of substitutional Cr2+ impurity in GaAs by a cluster approach”, M. H. de A. Viccaro, S. Sundaram, and R. R. SharmaA cluster treatment incorporating Jahn-Teller distortion and covalency effects has been given for a substitutional Cr2+ impurity in GaAs to interpret the g factors and zero-field splitting parameters. Significant charge-transfer effects have been found to be present in this system. The g... (Read more)
- 789. Phys. Rev. B 25, 25 (1982) , “Electron Paramagnetic Resonance on Iron-Related Centers in Silicon”, Sara H. Muller, Gijs M. Tuynman, Eric G. Sieverts, and C. A. J. AmmerlaanThe behavior of interstitial iron in high-resistivity dislocation-free silicon has been studied by annealing and by electron irradiation and subsequent annealing. Annealing of iron-doped samples at temperatures above 120°C yielded one, new electron paramagnetic resonance (EPR) spectrum labeled... (Read more)
- 790. Phys. Rev. Lett. 49, 1728 (1982) , “Positive Identification of the Cr4+ → Cr3+ Thermal Transition in GaAs”, D. C. Look, S. Chaudhuri, L. EavesTemperature-dependent Hall-effect measurements on two Cr-doped GaAs samples show a dominant center at E1=0.324-1.4×10-4T eV, with respect to the valence-band edge. By comparison with secondary-ion mass spectroscopy measurements of the Cr concentration, and recent EPR... (Read more)
- 791. phys. stat. sol. (a) 72, 701-713 (1982) , “On the Energy Spectrum of Dislocations in Silicon”, V. V. Kveder, Yu. A. Osipyan, W. Schrter, G. Zoth.Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized... (Read more)
- 792. phys. stat. sol. (b) 112, 695 (1982) , “EPR Investigation of Manganese-Boron Pairs in Silicon”, J. Kreissl, W. Gehlhoff.After manganese doping of low-resistivity B-doped p-silicon an EPR centre is detected, which could be identified in accordance with Ludwig and Woodbury as a manganese-boron pair, where a interstitially incorporated Mn2+ ion is located in the immediate vicinity of a B- ion on a... (Read more)
- 793. phys. stat. sol. (b) 109, 83 (1982) , “EPR Observation of an Au-Fe Complex in Silicon II Electronic Structure”, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan, R. L. Kleinhenz, J. W. Corbett.For a description of the Au-Fe complex which is discussed in Part I of this article, a model by Ludwig and Woodbury is adopted. This model does not allow for an analysis of the observed hyperfine interactions in a simple LCAO description. Instead a model of exchange coupled spins is proposed. The... (Read more)
- 794. phys. stat. sol. (b) 109, 525 (1982) , “Electron Paramagnetic Resonance of Gold in Silicon. II. Cluster Centres”, M. Höhne.The interpretation of the EPR spectrum suggests two alternative models: five gold atoms or three gold atoms with two boron atoms, respectively, form a cluster occupying lattice sites and adjacent interstitial sites. This cluster tends to further precipitation. Both of the paramagnetic gold-related... (Read more)
- 795. Solid State Commun. 44, 369-372 (1982) , “Electronic structure calculation of Mn-doped GaAs”, Arnaldo Dal Pino, Jr. Adalberto Fazzio and JoséR. LeiteThe molecular cluster model, within the framework of the self-consistent field multiple scattering Xα method, is applied to calculate the electronic structure of a Mn substitutional impurity in GaAs. The charge states Mn3+, with spin configurations S = 0 and 2, and Mn2+, with S = 5/2, were... (Read more)
- 796. Solid State Commun. 44, 285-286 (1982) , “Neutron-transmutation doping of GaAs — as studied by ESR”, J. Schneider and U. Kaufmann.Neutron (n0) transmutation doping of GaAs has been monitored by electron spin resonance (ESR). Strong evidence was obtained that, apart from fast neutron impact, AsGa antisite defects are also created by the γ- and β-emissions following thermal n0-capture. The AsGa defects, forming deep... (Read more)
- 797. Solid State Commun. 43, 41 (1982) , “The Neutral Divacancy in Silicon”, E. G. Sieverts, J. W. Corbett.Extended Hückel Theory calculations have been carried out on a cluster of silicon atoms to examine the relative stability of two configurations of the divacancy: (1) two vacancies on adjacent sites, i.e. the "normal" divacancy configuration; and (2) two vacancies separated by two... (Read more)
- 798. Appl. Phys. Lett. 39, 706 (1981) , “Energy Levels and Solubility of Interstitial Chromium in Silicon”, H. Feichtinger and R. CzaputaThe electronic level of interstitial Cr in silicon according to the transition Cr0i" align="middle">Cr + i" align="middle">(3d63d5) was determined by correlating the electron paramagnetic resonance (EPR) signal of Cr + ... (Read more)
- 799. J. Appl. Phys. 52, 879-884 (1981) , “Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers”, E. H. Poindexter, P. J. Caplan, B. E. Deal, R. R. RazoukInterface states and electron spin resonance centers have been observed and compared in thermally oxidized (111) and (100) silicon wafers subjected to various processing treatments. The ESR Pb signal, previously assigned to interface ·SiSi3 defects on (111)... (Read more)
- 800. Phys. Rev. B 24, 4571 (1981) , “Tellurium Donors in Silicon”, H. G. Grimmeiss, E. Janzén, H. Ennen, O. Schirmer, J. Schneider, R. Wörner, C. Holm, E. Sirtl, P. Wagner.The electronic properties of chalcogens as dopants in silicon are discussed with emphasis on tellurium. Tellurium give rise to two dominant donor levels which have been studied by junction space-charge techniques, infrared absorption, and ESR. Both donor levels exhibit excited states (Rydberg series... (Read more)
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