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- 501. Appl. Phys. Lett. 60, 1857 (1992) , “Spin Dependent Recombination in Pt-Doped Silicon p-n Junctions”, P. Christmann, C. Wetzel, B. K. Meyer, A. Asenov, A. Endrös.Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep... (Read more)
- 502. J. Appl. Phys. 72, 3095 (1992) , “Complexing in Silicon Induced by Surface Reactions: Electron Paramagnetic Resonance Detection of a 6-Platinum Cluster”, M. Höhne and U. JudaComplexing of 5dn impurities from supersaturated solutions in silicon occurs during thermal processing at intermediate temperatures subsequent to fast or retarded quenching. Doping of silicon with 5dn transition-metal ions in a wet... (Read more)
- 503. J. Appl. Phys. 72, 211 (1992) , “Autler–Townes effect of the photoexcited diamond nitrogen-vacancy center in its triplet ground state”, Xing-Fei He, Peter T. H. Fisk, and Neil B. MansonThe AutlerTownes effect in nuclear magnetic resonance (NMR) and electron paramagnetic resonance has been observed using recently developed Raman heterodyne techniques. The measurements were carried out on the nitrogen-vacancy color center in diamond, where the 3A"... (Read more)
- 504. J. Appl. Phys. 71, 4615 (1992) , “Paramagnetic defects in neutron-irradiated GaP”, T. Benchiguer, A. Goltzené, B. Mari, and C. SchwabAiming at a better understanding of intrinsic defects in III-V compounds, we reinvestigate fast-neutron-irradiated GaP. The surprising result is the observation of a similar spectrum, formerly ascribed to Asi-related defects in GaAs. Annealing experiments suggest this spectrum... (Read more)
- 505. J. Lumin. 53, 88 (1992) , “Frequency-dependent dephasing of N-V centers in diamond”, Eric van Oort and Max GlasbeekIn this paper, we report on high-resolution magneto-optical double-resonance experiments on the 3A →3E zero-phonon line (ZPL) transition of the N-V center in diamond. It is demonstrated that hole burning of the ZPL absorption (at 637 nm) is achieved by resonant microwave excitation of the... (Read more)
- 506. J. Lumin. 53, 49 (1992) , “Raman heterodyne studies of the nitrogen-vacancy centre in diamond”, Neil B. Manson, Xing-Fei He and Peter T. H. FiskThe Raman heterodyne detected EPR and NMR frequencies associated with the nitrogen-vacancy centre in diamond are found to be consistent with those for a spin-triplet ground state with the following spin-Hamiltonian parameters g = 2.0028, gn = 0.4036, D = 2.88 GHz, |A||| = 2.3 MHz, |A| = 2.1 MHz and... (Read more)
- 507. J. Non-Cryst. Solids 149, 137-160 (1992) , “Electron spin resonance characterization of self-trapped holes in amorphous silicon dioxide”, David L. GriscomThe electron spin resonance spectra of radiation-induced self-trapped holes (STHs) in amorphous silicon dioxide are isolated by isochromal annealing experiments and computer simulation analyses. Two distinct components, denoted STH1 and STH2 (plus a third component intermediate between the two),... (Read more)
- 508. J. Opt. Soc. Am. B 9, 768 (1992) , “Origin of persistent hole burning of N-V centers in diamond”, D. Redman, S. Brown, S. C. RandNew satellite features and antiholes in the persistent hole-burning spectrum of N–V centers in diamond, as well as their dependences on applied electric fields and frequency within the inhomogeneous absorption line, are reported. These results, together with reassignments of spin states of this center, permit an understanding of the origin of the satellite holes as well as of possible mechanisms for the persistent hole-burning phenomenon itself. In addition we report narrow optical interference fringes in heterodyne-detected spectra of persistent spectral holes in the N–V defect center in diamond and discuss a recent suggestion for high-resolution Ramsey-fringe hole-burning spectroscopy of solids based on phase-separated fields. (Read more)
- 509. J. Phys.: Condens. Matter 4, 8119 (1992) , “ENDOR studies on the N1 di-nitrogen centre in diamond”, A. Cox, M. E. Newton, J. M. BakerNew ENDOR measurements on the N1 centre confirm the N-C-N+ model for the defect. The N+ is in a substitutional site with approximately tetrahedral symmetry. The N-C fragment of the centre resembles the P1 centre, with slightly larger unpaired electron density on the nitrogen,... (Read more)
- 510. J. Phys.: Condens. Matter 4, 2651 (1992) , “ENDOR and high-temperature EPR of the N3 centre in natural type Ib diamonds”, J. A. van Wyk, J. H. N. Loubsert, M. E. Newton, J. M. BakerThe N3 is a single paramagnetic electron centre observed in type Ib diamonds. It has monoclinic symmetry below 200 degrees C and becomes axially symmetric at higher temperatures. It displays an unusual hyperfine structure which is shown to be from a single 14N nucleus. The... (Read more)
- 511. Phys. Rev. B 46, 5303 (1992) , “Cross-relaxation effects in the 2.818-eV zero-phonon emission in brown diamond”, I. Hiromitsu, J. Westra, and M. GlasbeekIn brown diamond, the long-lived emission at 2.818 eV is known to be due to a localized center in the photoexcited triplet state. In this paper, the emission intensity of the 2.818-eV center is studied as a function of the strength of an externally applied magnetic field. The cross-relaxation (CR)... (Read more)
- 512. Phys. Rev. B 46, 4582 (1992) , “Aluminum Incorporation in the Si-NL10 Thermal Donor”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe role of aluminum dopants in the creation and properties of the Si-NL10 center was investigated by means of electron-nuclear-double-resonance techniques. At least 10 different Si-NL10 species were identified, and their generation kinetics were studied in detail. Possible transformation mechanisms... (Read more)
- 513. Phys. Rev. B 46, 4544 (1992) , “Electron-Paramagnetic-Resonance Identification of Silver Centers in Silicon”, N. T. Son, V. E. Kustov, T. Gregorkiewicz, and C. A. J. AmmerlaanThe observation of silver in silicon by electron paramagnetic resonance (EPR) is reported. In p-type silicon doped with silver, several EPR spectra were detected. Three of these, which are labeled Si-NL42, Si-NL43, and Si-NL44, exhibit hyperfine structure with splitting into two components of equal... (Read more)
- 514. Phys. Rev. B 46, 1882 (1992) , “Charge-State-Dependent Activation Energy for Diffusion of Iron in Silicon”, H. Takahashi, M. Suezawa, and K. SuminoPrecipitation of neutral iron (Fe0) in n-type silicon (Si) and the generation of iron-acceptor pairs controlled by diffusion of positively charged iron (Fe+) in p-type Si are investigated by means of electron spin resonance (ESR). The temperature range in which the diffusion of... (Read more)
- 515. Phys. Rev. B 46, 12266-12277 (1992) , “Measurement of the effect of pretreatment and adsorption on the electrical properties of ZnO powders using a microwave-Hall-effect technique”, Byung-Ki Na, M. Albert Vannice, Arden B. WaltersMicrowave-Hall-effect (MHE) and electrical conductivity measurement techniques can now be used to obtain absolute values of the electrical properties of semiconductor powders under different controlled conditions. A commercial ESR spectrometer was modified to conduct MHE experiments and a network... (Read more)
- 516. Phys. Rev. B 46, 10600 (1992) , “Cross-relaxation dynamics of the N-V center in diamond as studied via optically detected microwave recovery transients”, I. Hiromitsu, J. Westra, M. GlasbeekThe N-V center in diamond is a nitrogen-vacancy pair defect with an electronic triplet spin ground state. Upon optical excitation and in the presence of an applied magnetic field, two subensembles of N-V centers with different spin temperatures are created at liquid-helium temperatures. For certain... (Read more)
- 517. Phys. Rev. B 45, 5883 (1992) , “Electron Paramagnetic Resonance of a Platinum Pair Complex in Silicon”, M. Höhne.EPR measurements of hydrogen-treated Si:Pt single crystals reveal a pair of equivalent Pt ions on next-nearest-neighbor sites. The g values and hyperfine parameters differ essentially from those of a previously detected Pt pair center; therefore, an additional constituent in at least one of the... (Read more)
- 518. Phys. Rev. B 45, 5699 (1992) , “Optical detection of magnetic resonance in the photoexcited triplet state of a deep center in diamond”, J. Westra, R. Sitters, and M. GlasbeekFrom an optically detected magnetic resonance study of the 2.818-eV zero-phonon emission in brown diamond, direct evidence for the existence of a photoexcited phosphorescent triplet state in diamond has been obtained. The emission is attributed to a deep-center triplet state with spin-Hamiltonian... (Read more)
- 519. Phys. Rev. B 45, 4344 (1992) , “Dipolar Interaction between [111] Pb Defects at the (111)Si/SiO2 Interface Revealed by Electron-Spin Resonance”, G. Van Gorp, A. Stesmans.A method is outlined to vary reproducibly the density of [111] Pb centers (?Si?Si3 defects with an unpaired sp3 orbital perpendicular to the interface) at the thermal (111)Si/SiO2 interface (grown at ?920 °C; 1.1 atm O2) using alternate non–Iin... (Read more)
- 520. Phys. Rev. B 45, 4122 (1992) , “First-principles study of fully relaxed vacancies in GaAs”, K. Laasonen, R. M. Nieminen, and M. J. PuskaThe structural and electronic properties of vacancies in GaAs have been studied using ab initio molecular dynamics. The atomic structures of vacancies in different charge states have been optimized by using a simulated-annealing procedure. The neighbor-atom relaxations are modest for neutral, singly... (Read more)
- 521. Phys. Rev. B 45, 3372 (1992) , “Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy”, H. J. von Bardeleben, M. O. Manasreh, D. C. Look, K. R. Evans, C. E. StutzElectron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The... (Read more)
- 522. Phys. Rev. B 45, 3349 (1992) , “Magnetic circular dichroism and optical detection of electron paramagnetic resonance of the SbGa heteroantisite defect in GaAs:Sb”, P. Omling, D. M. Hofmann, M. Kunzer, M. Baeumler, U. KaufmannIn an investigation of GaAs doped with Sb to a concentration of ≊1×1019 cm-3, the electron-paramagnetic-resonance (EPR) signal of the SbGa heteroantisite defect has been optically detected by monitoring the microwave-induced changes in the... (Read more)
- 523. Phys. Rev. B 45, 3287 (1992) , “Vacancy-Model Interpretation of EPR Spectrum of Si:Pt-”, F. G. Anderson, F. S. Ham, G. D. Watkins.The vacancy model for platinum in silicon as proposed by Watkins postulates a neutral Pt atom in the 5d10 electronic configuration occupying a negatively charged lattice vacancy, so that electronic properties of Pt- should be similar to those of the isolated vacancy... (Read more)
- 524. Phys. Rev. B 45, 3279 (1992) , “EPR Investigation of Pt- in Silicon”, F. G. Anderson, R. F. Milligan, G. D. Watkins.Using EPR we have resolved the question of whether the dominant Pt- defect in silicon consists of an isolated platinum ion or a platinum-platinum pair. We have measured the uniaxial-stress-induced shifts in the g values and find that the stress-coupling tensor shows the defect symmetry to... (Read more)
- 525. Phys. Rev. B 45, 1645 (1992) , “Electron-paramagnetic-resonance observation of gallium vacancy in electron-irradiated p-type GaAs”, Y. Q. Jia, H. J. von Bardeleben, D. Stievenard, C. DelerueWe report an observation by electron paramagnetic resonance (EPR) of the gallium vacancy defect in GaAs. The defect is observed after electron irradiation of p-type GaAs. The gallium vacancy defect shows trigonal symmetry; its spin-Hamiltonian parameters are determined as S=1/2,... (Read more)
- 526. Phys. Rev. B 45, 1436 (1992) , “EPR identification of the negatively charged vacancy in diamond”, J. Isoya, H. Kanda, Y. Uchida, S. C. Lawson, S. Yamasaki, H. Itoh, Y. MoritaElectron-paramagnetic-resonance and electron-nuclear-double-resonance (ENDOR) methods are used to identify the negatively charged state of the isolated vacancy in electron-irradiated synthetic diamond crystals. The Td symmetry is confirmed by determining the arrangement of both nearest... (Read more)
- 527. Phys. Rev. Lett. 69, 3185 (1992) , “Paramagnetic State of the Isolated Gold Impurity in Silicon”, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanThe paper reports on the observation of the electron paramagnetic resonance spectrum of the isolated substitutional gold impurity in silicon. The spectrum has orthorhombic I (C2v) symmetry and an effective spin S=1/2. It has been detected in silver-doped samples with gold being introduced... (Read more)
- 528. Phys. Rev. Lett. 69, 1580 (1992) , “Linear Stark and Nonlinear Zeeman Coupling to the Ground State of Effective Mass Acceptors in Silicon”, Andreas Köpf and Kurt LassmannIt is shown by dielectric resonance absorption at 60 GHz that there is a linear coupling of the electric field to the ground state of effective mass acceptors in Si reflecting the lower Td symmetry in the central portion of the ground-state wave function. The coupling increases strongly... (Read more)
- 529. Phys. Rev. Lett. 68, 1582 (1992) , “Breathing-Mode Relaxation Associated with Electron Emission and Capture Processes of EL2 in GaAs”, G. A. Samara, D. W. Vook, J. F. GibbonsAnalysis of the effects of hydrostatic pressure on the electronic emission and capture properties of the (0/+) and (+/++) deep levels of the EL2 defect in GaAs leads to the following conclusions: (1) Both levels move higher in the band gap with pressure; (2) relatively large inward (outward) lattice... (Read more)
- 530. Rev. Sci. Instrum. 63, 5742 (1992) , “Sensitive electron paramagnetic resonance spectrometer for studying defects in semiconductors”, H. E. Altink, T. Gregorkiewicz, and C. A. J. AmmerlaanThe construction of a state-of-the-art electron paramagnetic resonance spectrometer for application to the studies of defects in semiconductors is described. The spectrometer is of superheterodyne type with low-frequency modulation of the magnetic field and working in dispersion. The use of a... (Read more)
- 531. Rev. Sci. Instrum. 63, 4251 (1992) , “Saturation recovery electron paramagnetic resonance spectrometer”, Richard W. Quine, Sandra S. Eaton, and Gareth R. EatonA versatile saturation recovery accessory based on a small, special-purpose timing controller and an efficient mix of coaxial and waveguide microwave components has been added to a commercial electron paramagnetic resonance (EPR) spectrometer. The spectrometer was designed for study of the spin... (Read more)
- 532. Appl. Phys. A 53, 147 (1991) , “Iron-Aluminum Pairs in Silicon”, S. Greulich-Weber, A. Grger, J. M. Spaeth, H. Overhof.Iron-aluminum pairs in silicon are investigated with conventional and optically detected electron paramagnetic resonance (EPR). For the trigonal and orthorhombic pairs known from previous EPR measurements we found for the first time optical absorption bands by measuring their magnetic circular dichroism of the absorption (MCDA). Direct experimental evidence is presented for the configurational bistability of both pairs by showing that the MCDA of the trigonal configuration can be transformed into that of the orthorhombic configuration by the combined effect of light and temperature. A new trigonal pair was discovered by conventional EPR having the same EPR intensity as the known one. Total energy calculations of various (Fei-Als) pair configurations show that two trigonal (Fei-Als)0 pairs with different Fei-Als separations have almost the same binding energy and should occur with the same probability. Fei + is always on a tetrahedral interstitial site, while Als - is nearest neighbor along <111> in one pair, second nearest neighbor in the other one with one silicon lattice site in between. (Read more)
- 533. Appl. Phys. Lett. 59, 2281 (1991) , “Electron-paramagnetic-resonance study of the isolated arsenic antisite in electron irradiated GaAs and its relation to the EL2 center”, F. C. Rong, W. R. Buchwald, M. Harmatz, E. H. Poindexter, W. L. WarrenArsenic antisites produced in GaAs by room-temperature electron irradiation (RTEI) are examined by electron paramagnetic resonance (EPR). For the first time, this RTEI antisite, which has been believed to be the isolated antisite, is found to be metastable. The most efficient photon energy for... (Read more)
- 534. Appl. Phys. Lett. 59, 1890 (1991) , “New Carbon Related Defects Formed in Nitrogen Rich Czochralski Silicon Crystals”, Akito Hara and Akira OhsawaWe studied some electrical properties of silicon crystals containing carbon, nitrogen, and oxygen. Nitrogen-oxygen complexes are formed in nitrogen- and oxygen-rich silicon crystals. However, we found that carbon suppresses the formation of nitrogen-oxygen complexes. Moreover, new shallow... (Read more)
- 535. Appl. Phys. Lett. 59, 1870 (1991) , “Paramagnetic nitrogen in chemical vapor deposition diamond thin films”, M. Hoinkis, E. R. Weber, M. I. Landstrass, M. A. Plano, S. Han, D. R. KaniaElectron-paramagnetic-resonance (EPR) studies demonstrate the presence of nitrogen point defects in microwave-assisted chemical vapor deposition (CVD) diamond thin films. Polycrystalline powder pattern EPR spectra are interpreted with g=2.0023, A=114.0 MHz, and... (Read more)
- 536. Appl. Phys. Lett. 58, 502 (1991) , “Photoluminescence and magnetic resonance studies of Er3 + in MeV ion-implanted GaAs”, P. B. Klein, F. G. Moore, and H. B. DietrichThe effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3 + electron paramagnetic resonance (EPR) signal as well as the Er3 + and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3... (Read more)
- 537. Appl. Phys. Lett. 58, 2144 (1991) , “Electron Paramagnetic Resonance of a Multistable Inaterstitial-Carbon-Substitutional-Phosphorus Pair in Silicon”, X. D. Zhan and G. D. WatkinsTwo new electron paramagnetic resonance centers are reported, Si-L8 and Si-L9, which are identified with the stable and one of the four metastable configurations, respectively, of a multistable defect recently discovered by deep level transient capacitance spectroscopy in electron-irradiated... (Read more)
- 538. Appl. Phys. Lett. 58, 1742 (1991) , “Electron spin resonance study of laser-annealed (Zn,Mn)O ceramics”, Katsuyasu Kawano, Ryouhei Nakata, and Minoru SumitaInvestigations have been made on the effects of pulse laser annealing on the ceramics (Zn,Mn)O by means of electron spin resonance (ESR) measurements. A remarkable change in the ESR spectrum was observed after annealing by a Nd:YAG pulse laser (=1.064 µm, 57 J/cm2). It... (Read more)
- 539. Appl. Phys. Lett. 58, 1641 (1991) , “Fundamental chemical differences among Pb defects on (111) and (100) silicon”, J. H. Stathis, L. Dori.Using electron spin resonance, a single defect (called Pb0) is observed at the Si(111)/SiO2 interface, whereas two different defects (called Pb0 and Pb1) are observed at the Si(100)/SiO2 interface. While... (Read more)
- 540. Appl. Surf. Sci. 50, 277-280 (1991) , “Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-EPR”, T. Benchiguer, E. Christoffel, A. Goltzené, B. Mari, B. Meyer and C. SchwabWe have compared two different models which give account for the photoquenching behaviour of the As+Ga-related defects. The first model is based on the so-called metastability of the centre and the second one on an electrical charge transfer, resulting from the trapping of the photo-generated... (Read more)
- 541. Appl. Surf. Sci. 50, 273-276 (1991) , “Interstitial Mn as a new donor in GaP and GaAs: an EPR study”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz , C. A. J. AmmerlaanWe report the observation of a new electron paramagnetic resonance centre in neutron-irradiated GaP and a similar new EPR centre in Mn-doped GaAs. Both centres have been identified as interstitial Mn and act as a donor. To our knowledge this is the first observation by EPR of an interstitial... (Read more)
- 542. Appl. Surf. Sci. 48-49, 478-482 (1991) , “ESR studies on luminescent ZnS:Mn films and CdS---ZnS:Mn superlattices deposited on a GaAs(100) substrate by hot-wall epitaxy”, Takato Nakamura, Yoji Takeuchi, Hitoshi Muramatsu , Hiroshi Fujiyasu , Yoichiro NakanishiLuminescent ZnS:Mn thin films and CdS---ZnS:Mn superlattices on a GaAs(100) substrate prepared by the hot-wall epitaxy technique have been examined by means of electron spin resonance (ESR) spectroscopy. It was observed that the lowest energy transition assigned to M1 = −5/2 splits into... (Read more)
- 543. J. Appl. Phys. 70, 346 (1991) , “Structural identification of the silicon and nitrogen dangling-bond centers in amorphous silicon nitride”, W. L. Warren, F. C. Rong, E. H. Poindexter, G. J. Gerardi, J. KanickiWe report the observation of both silicon and nitrogen paramagnetic defect centers using X-band and Q-band electron spin resonance microwave excitation frequencies. By using two different microwave frequencies along with a computer analysis of the resonance lineshapes, we have been... (Read more)
- 544. J. Appl. Phys. 70, 2220 (1991) , “Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films”, W. L. Warren, P. M. Lenahan, J. KanickiWe have investigated the effects of different post-deposition temperature anneals and N-H concentrations, on the generation of ultraviolet (UV)-induced two-coordinated nitrogen dangling bonds in plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films using electron spin resonance... (Read more)
- 545. J. Appl. Phys. 69, 175 (1991) , “Electron Spin Resonance of Defects in Silicon-on-Insulator Structures Formed by Oxygen Implantation: Influence of ? Irradiation”, A. Stesmans, A. G. Revesz, H. L. Hughes.Silicon-on-insulator structures obtained by single-step implantation of oxygen followed by high temperature annealing were studied by K-band electron spin resonance (ESR) at 4.331 K. The spectrum has a strong line at g=2.0059±0.0001 with a spin density of... (Read more)
- 546. J. Lumin. 48-49, 803 (1991) , “Microwave-induced line-narrowing of the N-V defect absorption in diamond”, E. van Oort, B. van der Kamp, R. Sitter and M. GlasbeekFor the diamond N-V center results of optically detected magnetic resonance experiments are reported using narrow-band laser excitation. Strain-induced splittings of the 3A ground state are observed in the ODMR spectra. In addition, an internal strain-induced lifting of the orbital degeneracy in the... (Read more)
- 547. J. Phys.: Condens. Matter 3, 3605 (1991) , “Models for the di-nitrogen centres found in brown diamond”, M. E. Newton, J. M. BakerNo new experiments are reported in this paper: the paper comprises a re-interpretation of published EPR data of the various di-nitrogen centres in brown diamond, including the new ENDOR results of the authors' previous paper on the W7 centre (see ibid., vol.3, p.3591, 1991). The new evidence about... (Read more)
- 548. J. Phys.: Condens. Matter 3, 3591 (1991) , “ENDOR studies on the W7 di-nitrogen centre in brown diamond”, M. E. Newton, J. M. BakerA new technique, involved rapid and repeated sweeping of radio-frequency irradiation through a wide frequency range, has been used to enhance the ENDOR signal of the W7 di-nitrogen centre in diamond. This allowed the determination of the following magnetic hyperfine and electric quadrupole... (Read more)
- 549. Phys. Rev. B 44, 6125 (1991) , “Electron-Paramagnetic-Resonance Identification of a Trigonal Chromium-Indium Pair in Silicon”, P. Emanuelsson, P. Omling, H. G. Grimmeiss, J. Kreissl, W. Gehlhoff.An EPR spectrum in silicon doped with chromium and indium is reported. The spectrum, which shows a complicated fine and hyperfine structure could be identified as originating in a chromium-indium pair of trigonal symmetry. The fine structure corresponds to transitions within the... (Read more)
- 550. Phys. Rev. B 44, 3678 (1991) , “Electron-Paramagnetic-Resonance Identification of the Manganese-Gallium Pair in Silicon”, J. Kreissl, K. Irmscher, W. Gehlhoff, P. Omling, P. Emanuelsson.An electron-paramagnetic-resonance (EPR) investigation of silicon doped with gallium and manganese shows a defect-related spectrum with trigonal symmetry. The proof that Mn and Ga are involved in the defect is based on the observed hyperfine interactions. A complicated fine-structure behavior... (Read more)
- 551. Phys. Rev. B 44, 3409 (1991) , “Hydrogen States Probed by Electron-Spin Resonance of Phosphorus Donors in Silicon”, Kouichi Murakami, Hiromitsu Suhara, Shigeru Fujita, and Kohzoh MasudaHydrogen in phosphorus-doped silicon has been investigated, by monitoring shallow donor P by electron-spin resonance (ESR). Significant broadening in motionally narrowed ESR lines is first observed in Si samples treated with hydrogen plasma. It is found from the donor-concentration dependence that... (Read more)
- 552. Phys. Rev. B 44, 3012 (1991) , “Magnetic-resonance studies of interstitial Mn in GaP and GaAs”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz, and C. A. J. AmmerlaanWe report the observation of an additional electron-paramagnetic-resonance (EPR) center in neutron-irradiated GaP. The center labeled as GaP-NL1 was further investigated with the electron-nuclear double-resonance technique. We also observed another, similar EPR center in GaAs doped with Mn, which we... (Read more)
- 553. Phys. Rev. B 44, 11353 (1991) , “O Environment of Unpaired Si Bonds (Pb Defects) at the (111)Si/SiO2 Interface”, A. Stasmans, K. Vanheusden.The immediate oxygen environment in the silica side of the [111]Pb defect (an interfacial ?Si?Si3 defect with an unpaired sp3-like hybrid perpendicular to the interface) has been revealed from 17O hyperfine (HF) structure electron-spin-resonance... (Read more)
- 554. Phys. Rev. B 44, 10525 (1991) , “Electronic structure and electron-paramagnetic-resonance properties of intrinsic defects in GaAs”, C. DelerueThe electronic structure of vacancies, antisites, self-interstitials, and some related complex defects in GaAs is calculated using a self-consistent semiempirical tight-binding technique. In particular, we give the electron densities on the various atoms to predict the... (Read more)
- 555. Phys. Rev. B 43, 14569 (1991) , “Kinetics of holes optically excited from the AsGa EL2 midgap level in semi-insulating GaAs”, G. Hendorfer and U. KaufmannElectron paramagnetic resonance (EPR) has been used to study the growth of the dominant acceptor EPR signals FR1 and GR2 in undoped semi-insulating GaAs under illumination as well as their spontaneous intensity changes when the light is switched off. These studies locate the FR1 level at... (Read more)
- 556. Phys. Rev. Lett. 67, 3420 (1991) , “Spin Dynamics and Electronic States of N-V Centers in Diamond by EPR and Four-Wave-Mixing Spectroscopy”, D. A. Redman, S. Brown, R. H. Sands, S. C. RandA new phase-modulation technique for nonlinear laser spectroscopy is applied with a relative resolving power in the sub-Hz range to measure fundamental relaxation processes of the N-V center in diamond. Complementary EPR experiments versus temperature establish the spin character of the ground state... (Read more)
- 557. Phys. Rev. Lett. 67, 2517 (1991) , “Experimental evidence for excitonic mechanism of defect generation in high-purity silica”, T. E. Tsai and D. L. GriscomDirect evidence for the creation of oxygen-vacancy, oxygen-interstitial pairs in SiO2 glasses by an excitonic mechanism is developed from an electron-spin-resonance study of high-purity fused silicas exposed to highly focused 6.4-eV excimer laser light. (Read more)
- 558. Phys. Rev. Lett. 67, 1149 (1991) , “Structure of Gold in Silicon”, G. D. Watkins, M. Kleverman, A. Thilderkvist, and H. G. GrimmeissDetailed information on the electronic structure of the neutral substitutional gold center in silicon (Au0) has been revealed from Zeeman studies of the donor and acceptor excitation spectra at 793 and 611 meV, respectively. The center is paramagnetic, S=1/2, with g??2.8 and... (Read more)
- 559. Phys. Rev. Lett. 67, 112 (1991) , “Photoluminescence Studies of the EL2 Defect in Gallium Arsenide under External Perturbations”, M. K. Nissen, A. Villemaire, and M. L. W. ThewaltThe fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full Td symmetry and hence support the isolated-arsenic-antisite model of EL2.... (Read more)
- 560. Phys. Rev. Lett. 66, 2360 (1991) , “Deep State of Hydrogen in Crystalline Silicon: Evidence for Metastability”, B. Holm, K. Bonde Nielsen, and B. Bech NielsenAfter proton implantation into n-type silicon at 45 K, a bistable hydrogen center with a band-gap level Ec-Et=0.16 eV is observed by deep-level transient spectroscopy. The center anneals at ?100 K under zero bias with a decay constant ?=(3.0×1012... (Read more)
- 561. phys. stat. sol. (b) 165, 189 (1991) , “EPR of New Platinum-Related Complexes in Silicon. II. Coexistence of a Tetragonal Jahn-Teller System and a Nearly Trigonal System in One Pair”, M. Höhne, W. Gehlhoff.A spectroscopic peculiarity of two Pt-related complex defects is interpreted for both of them by assuming one Pt ion in a crystal field, which is tetragonal, though another defect is trigonally coordinated. This coexistence is discussed in the framework of a static Jahn-Teller effect. Wave... (Read more)
- 562. phys. stat. sol. (b) 164, 503 (1991) , “EPR of New Platinum-Related Complexes in Silicon I. Defects of Symmetry C1h Formed at Intermediate Temperatures”, M. Höhne, W. Gehlhoff.The variety of Pt-related complex defects in silicon is enlarged by EPR detection of a new group of defects, each of them containing one Pt ion. They are formed by different annealing procedures, including a step at intermediate temperatures. Two of the new complexes exhibit an EPR spectroscopic... (Read more)
- 563. Physica B 170, 155-167 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V. Gorelkinskii, N.N. Nevinnyi
- 564. Rev. Sci. Instrum. 62, 2969 (1991) , “Electron paramagnetic resonance Q-band bridge with GaAs field-effect transistor signal amplifier and low-noise Gunn diode oscillator”, James S. Hyde, M. E. Newton, Robert A. Strangeway, Theodore G. Camenisch, and W. FronciszA Varian Q-band E-110 microwave bridge for electron paramagnetic resonance (EPR) spectroscopy has been modified by addition of a low-phase noise Gunn diode oscillator of our own design, a low-noise GaAs field-effect transistor microwave signal amplifier, and a balanced mixer requiring high... (Read more)
- 565. Solid State Commun. 80, 439 (1991) , “Electron paramagnetic resonance of nickel in silicon — II. hyperfine and quadrupole interactions”, N. T. Son, A. B. van Oosten and C. A. J. AmmerlaanAn electron paramagnetic resonance (EPR) study on n-type silicon doped with nickel enriched to 88.1% 61Ni is presented. The structure due to the 61Ni isotope with nuclear spin I = 3/2 was investigated. The EPR spectrum with the appearance of "forbidden" lines can be described by a spin... (Read more)
- 566. Solid State Commun. 79, 119 (1991) , “Oxygen Interaction with Defects at the Si/SiO2 Interface”, J. H. Stathis, S. Rigo, I. Trimaille.Using 17O-enriched thermal oxide on silicon, we have measured the hyperfine interaction between dangling bonds at the (111) interface (Pb centers) and oxygen. Our analysis shows that the Pb center interacts with a single oxygen atom in the SiO2. (Read more)
- 567. Solid State Commun. 78, 321 (1991) , “Shallow donor in buried oxide Si-On-insulator structures revealed by γ-irradiation-induced electron spin resonance activation”, A. Stesmans.Si-on-insulator structures formed by implantation of oxygen (SIMOX) in a single step to a dose 1.8 × 1018 O+ cm−2 into p-type (0 0 1) Si and high temperature annealing have been studied by K-band electron spin resonance (ESR) at 4.3–31 K. γ-irradiation to a dose of 1 Mrad... (Read more)
- 568. Sov. Phys. Solid State 33, 1409 (1991) , “Electron paramagnetic resonance of phosphorus in diamond”, N. D. Samsonenko, V. V. Toki?, S. V. Gorban’
- 569. Sov. Phys. Solid State 33, 1326 (1991) , “Electron Spin Resonance of an Excited Triplet State of a Divacancy in Silicon”, M. P. Vlasenko, L. S. Vlasenko.
- 570. Appl. Phys. Lett. 57, 2663 (1990) , “Maximum density of Pb centers at the (111) Si/SiO2 interface after vacuum anneal”, A. Stesmans and G. Van GorpThe density of interfacial [111]Pb centers, i.e., 0SiSi3 defects with unpaired bond along [111], has been accurately determined by K-band electron spin resonance at 4.3 K on (111)Si/SiO2 structures using various oxidation conditions.... (Read more)
- 571. Appl. Phys. Lett. 57, 162 (1990) , “Chemical Kinetics of Hydrogen and (111) Si-SiO2 Interface Defects”, K. L. Brower and S. M. MyersElectron paramagnetic resonance (EPR) measurements and theoretical considerations have yielded a unified model for the hydrogen chemistry of silicon dangling bond Pb defects at the (111) Si-SiO2 interface. Previous EPR measurements indicated that passivation of... (Read more)
- 572. J. Appl. Phys. 67, 2462 (1990) , “NL10 Defects Formed in Czochralski Silicon Crystals”, Akito Hara, Iesada Hirai, and Akira OhsawaThe electron spin resonance of defects formed in high-resistivity Czochralski silicon crystals annealed at 470 °C were observed. Defects with C2v symmetry in nitrogen in-diffused crystals annealed for less than about 50 h were observed. With annealing for more than about... (Read more)
- 573. J. Cryst. Growth 102, 701-705 (1990) , “Influence of In-Doping on dislocations in Liquid Encapsulated Czochralski (LEC) grown gallium arsenide”, J. Wu, P. G. Mo and G. Y. WangS. Benakki, E. Christoffel, A. Goltzene and C. SchwabJ. R. Wang and C. H. LeeIn this study, the dislocation distribution in In-doped GaAs crystals is investigated by KOH etching. EPR (electron paramagnetic resonance) measurements are made on plastically deformed In-doped crystals. A mechanism for the elimination of dislocations by doping GaAs crystals with indium atoms is... (Read more)
- 574. J. Lumin. 45, 26 (1990) , “ANOMALOUS LINESHAPES IN RAMAN HETERODYNE DETECTED EPR”, P. T. H. Fisk, X. -F. He, K. Holliday and N. B. MansonAn unusual lineshape has been observed in the Raman heterodyne NMR and EPR signals associated with a nitrogen-vacancy centre in diamond. This lineshape is shown to result from power broadening effects and can be expected as a general result from any Raman heterodyne signal where the transition under... (Read more)
- 575. J. Non-Cryst. Solids 116, 289-292 (1990) , “Bleaching of peroxy radical in SiO2 glass with 5 eV light*1”, H. Hosono, R. A. WeeksPeroxy radical (POR) in SiO2 glass has been found to be bleached out by illumination with 5 eV light without accompanying changes in E′ and non-bridging oxygen hole centers. An absorption band centered at 4.8 eV (FWHM; ≈ 0.8 eV is also bleached together with POR. It is suggested that... (Read more)
- 576. Opt. Lett. 15, 983 (1990) , “Raman heterodyne detection of electron paramagnetic resonance”, K. Holliday, X. -F. He, P. T. H. Fisk, N. B. MansonWe report the detection of an electron paramagnetic resonance signal using Raman heterodyne spectroscopy, a rf –optical double-resonance technique. The signals are associated with the nitrogen-vacancy center in diamond, which has a spin-triplet ground state. A three-line spectrum associated with the nitrogen hyperfine structure is observed for various magnetic field strengths and crystal orientations. (Read more)
- 577. Opt. Lett. 15, 1094 (1990) , “Raman heterodyne detected electron-nuclear-double-resonance measurements of the nitrogen-vacancy center in diamond”, N. B. Manson, X. -F. He, P. T. H. FiskWe report two new applications of the Raman heterodyne detection technique. Raman heterodyne detected electron-nuclear double resonance and a double rf resonance technique are used to obtain the hyperfine structure of the nitrogen-vacancy center in diamond. (Read more)
- 578. Phys. Rev. B 42, 9843 (1990) , “EPR studies of interstitial Ni centers in synthetic diamond crystals”, J. Isoya, H. Kanda, Y. UchidaTwo new electron-paramagnetic-resonance (EPR) spectra, tentatively labeled NIRIM-1 and NIRIM-2, have been studied using synthetic diamond crystals grown from the Ni solvent to which various amounts of nitrogen getters (Ti, Zr) and/or boron were added. The NIRIM-1 spectrum (g=2.0112) having the... (Read more)diamond| EPR| NIRIM1 NIRIM2 .inp files: diamond/NIRIM1 diamond/NIRIM2 | last update: Masatoshi Sasaki
- 579. Phys. Rev. B 42, 8605 (1990) , “Low-field optically detected magnetic resonance of a coupled triplet-doublet defect pair in diamond”, Eric van Oort, Paul Stroomer, and Max GlasbeekMicrowave-induced changes in the optical emission of the N-V center in diamond have previously been attributed to magnetic resonance of the defect in its 3A ground state [E. van Oort et al., J. Phys. C 21, 4385 (1988)]. In this paper, the focus is on the origin of the hyperfine splittings... (Read more)
- 580. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbon–substitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon ‘‘molecule’’... (Read more)
- 581. Phys. Rev. B 42, 5759 (1990) , “EPR Identification of the Single-Acceptor State of Interstitial Carbon in Silicon”, L. W. Song and G. D. WatkinsAn EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the... (Read more)
- 582. Phys. Rev. B 42, 3765 (1990) , “Observation of dipolar interactions between Pb0 defects at the (111) Si/SiO2 interface”, A. Stesmans, G. Van GorpDipole-dopole (DD) interactions between Pb0 (Si?Si3) defects at the two-dimensional (2D) (111) Si/SiO2 interface are revealed by electron-spin resonance. A DD fine-structure doublet develops with increasing [Pb0] resulting in a line shape characteristic of... (Read more)
- 583. Phys. Rev. B 42, 3461 (1990) , “EPR evidence for As interstitial-related defects in semi-insulating GaAs”, E. Christoffel, T. Benchiguer, A. Goltzené, C. Schwab, Wang Guangyu, Wu JuWe report the analysis of the residual paramagnetic structure appearing in semi-insulating GaAs after microwave saturation of the AsGa-related spectrum and most intense after preliminary plastic deformation of the material. It is separable into two similar and correlated central hyperfine... (Read more)
- 584. Phys. Rev. B 42, 3444 (1990) , “Dissociation Kinetics of Hydrogen-Passivated (111) Si-SiO2 Interface Defects”, K. L. Brower.This paper is concerned with the chemical kinetics of the transformation of hydrogen-passivated interface defects (HPb centers) into paramagnetic Pb centers (?Si?Si3) at the (111) Si-SiO2 interface under vacuum thermal annealing. Float-zone (111) silicon... (Read more)
- 585. Phys. Rev. B 42, 1773 (1990) , “Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride”, William L. Warren and P. M. LenahanWe report the first observation of 14N nearest-neighbor hyperfine interactions with an unpaired electron on silicon dangling-bond centers, K centers, in silicon nitride generated by ultraviolet or gamma irradiation. We observe this interaction using electron-nuclear double-resonance... (Read more)
- 586. Phys. Rev. B 42, 1731 (1990) , “Electron-Paramagnetic-Resonance Identification of a Trigonal Manganese-Indium Pair in Silicon”, J. Kreissl, W. Gehlhoff, P. Omling, P. Emanuelsson.A new, defect-related electron-paramagnetic-resonance (EPR) spectrum in silicon doped with indium and manganese is reported. The spectrum shows trigonal symmetry, and the involvements of Mn and In in the defect are proven from the observed hyperfine interactions. A complicated and unusual... (Read more)
- 587. Phys. Rev. B 42, 11352-11354 (1990) , “Source of 17O hyperfine broadening of the Pb resonance associated with the (111) Si-SiO2 interface”, K. L. BrowerThe Pb center is primarily a silicon dangling-bond type of defect at the (111) Si-SiO2 interface that is observable with electron paramagnetic resonance (EPR). Dry oxidation at 750 °C of (111) silicon with O2 enriched with 17O (I=5/2) to 51.26% is observed... (Read more)
- 588. Phys. Rev. B 41, 8560 (1990) , “Electron Paramagnetic Resonance Identification of the Orthorhombic Iron-Indium Pair in Silicon”, W. Gehlhoff, P. Emanuelsson, P. Omling, and H. G. GrimmeissA different EPR spectrum (Lu4) in silicon doped with indium and iron is reported together with an EPR spectrum previously observed by Ludwig and Woodbury. The two spectra show orthorhombic symmetry and are found to originate from the same FeIn pair. They are explained as transitions within the two... (Read more)
- 589. Phys. Rev. B 41, 5283 (1990) , “Fine structure of excitons in type-II GaAs/AlAs quantum wells”, H. W. van Kesteren, E. C. Cosman, W. A. J. A. van der Poel, C. T. FoxonOptically detected magnetic resonance in zero field as well as in a finite magnetic field has been used to study the excitons in type-II GaAs/AlAs quantum wells. The spectra are analyzed using the appropriate spin Hamiltonian for the quasi-two-dimensional indirect excitons. The electron-hole... (Read more)
- 590. Phys. Rev. B 41, 3905 (1990) , “Fourier-transform and continuous-wave EPR studies of nickel in synthetic diamond: Site and spin multiplicity”, J. Isoya, H. Kanda, J. R. Norris, J. Tang, M. K. BowmanPulsed, Fourier-transform, and continuous-wave electron paramagnetic resonance methods are used to study the g=2.0319 EPR signal in synthetic diamond crystals. This signal is from Ni which is found to be located at a substitutional site in the diamond lattice without detectable nearby charge... (Read more)
- 591. Phys. Rev. B 41, 12628 (1990) , “Comparative Study of Si-NL8 and Si-NL10 Thermal-Donor-Related EPR Centers”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe current status of the electron-paramagnetic-resonance and electron-nuclear double-resonance (ENDOR) studies of thermal-donor (TD) centers in silicon is critically reviewed. The structural models developed for the TD-related Si-NL8 and Si-NL10 heat-treatment centers are presented. On the basis of... (Read more)
- 592. Phys. Rev. B 41, 10206 (1990) , “Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures”, U. Kaufmann, W. Wilkening, P. M. Mooney, T. F. KuechWe report electron-paramagnetic-resonance results for the shallow effective-mass 1s(T2) state of the Si donor associated with the X valleys in indirect-band-gap (x≥0.4) AlxGa1-xAs:Si layers grown on GaAs. The data confirm definitely that the heteroepitaxial strain... (Read more)
- 593. Phys. Rev. Lett. 65, 207 (1990) , “First Observation of Paramagnetic Nitrogen Dangling-Bond Centers in Silicon Nitride”, William L. Warren, P. M. Lenahan, and Sean E. CurryWe report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of 14N hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electron’s wave function is almost... (Read more)
- 594. Phys. Rev. Lett. 65, 2046 (1990) , “Anion-Antisite-like Defects in III-V Compounds”, M. J. Caldas, J. Dabrowski, A. Fazzio, and M. SchefflerWe report ab initio calculations of total energies and electronic structures of P, As, and Sb donors in GaAs and InP. In the Td geometry, all these defects exhibit two donor states in the forbidden gap: an internal optical excitation energy of the order of 1 eV, and a Franck-Condon shift... (Read more)
- 595. Phys. Rev. Lett. 64, 3042 (1990) , “Microscopic identification and electronic structure of a di-hydrogen–vacancy complex in silicon by optical detection of magnetic resonance”, W. M. Chen, O. O. Awadelkaim, B. Monemar, J. L. Lindström, G. S. Oehrlein.We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine... (Read more)
- 596. phys. stat. sol. (a) 121, 63 (1990) , “Point Paramagnetic Defects in Diamond Irradiated by High-Energy Ions”, D. P. Erchak, R. B. Grelfand, N. M. Penina, V. F. Stelmakh, V. P. Tolstykh, A. G. Ulyashin, V. S. Varichenko, A. M. ZaitsevA series of highly oriented and textured microwave CVD diamond films, where only the deposition time was varied, was deposited on silicon wafers in order to follow the evolution of the microstructure and defect content with film thickness. SEM, XRD, Raman spectroscopy, luminescence measurements, and... (Read more)
- 597. Solid State Commun. 75, 115 (1990) , “Magnetic Resonance Spectroscopy of Zinc Doped Silicon”, H. E. Altink, T. Gregorkiewicz and C. A. J. AmmerlaanThe spin-Hamiltonian analysis is presented of five new electron paramagnetic resonance spectra observed in silicon after indiffusion of zinc impurity. On the basis of hyperfine interactions one of the spectra is identified with a monoclinic ZnCu pair, while another spectrum arises from a trigonal... (Read more)
- 598. Solid State Commun. 74, 1003 (1990) , “Observation of dipolar interactions in a dilute two-dimensional spin system: °Si ≡ Si3 defects at the (1 1 1)Si/SiO2 interface”, A. Stesmans, G. Van Gorp.K-band spectron spin resonance spectra measured at 4.3 K reveal for the first time dipole-dipole (DD) interaction effects between [1 1 1]Pb centers. These are °Si ≡ Si3 defects with unpaired sp3 hybrid |[1 1 1] located at the essentially 2-dimensional (1 1 1)Si/SiO2 interface. Both line... (Read more)
- 599. Solid State Commun. 73, 393 (1990) , “Electron paramagnetic resonance of nickel in silicon. — I. Identification of spectrum”, L. S. Vlasenko, N. T. Son, A. B. van Oosten, C. A. J. Ammerlaan, A. A. Lebedev, E. S. Taptygov, V. A. KhramtsovResults are reported on the paramagnetic resonance spectrum recently identified with the negatively charged state of substitutional nickel in n-type silicon. Studies were made on the presence of the spectrum in silicon with different concentrations of phosphorus doping and under various conditions... (Read more)
- 600. Sov. Phys. Semicond. 24, 851 (1990) , “Electron Spin Resonance of FeFeB Complexes in Silicon”, A. A. Ezhevski?, C. A. J. Ammerlaan.
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