« Previous
1
Next »
(2 hits, 1/1)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 1. Phys. Rev. B 75, 075306 (2007) , “Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)”, G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. DamilanoThe optical properties of vertically stacked self-assembled GaN/AlN quantum dots (QD's) grown on Si substrates were studied by means of temporally and spatially resolved cathodoluminescence (CL). An analysis of the CL spectra, thermal activation energies, and measured decay times of the QD... (Read more)
- 2. J. Appl. Phys. 99, 011101 (2006) , “Degradation of hexagonal silicon-carbide-based bipolar devices”, M. Skowronski and S. HaOnly a few years ago, an account of degradation of silicon carbide high-voltage p-i-n diodes was presented at the European Conference on Silicon Carbide and Related Compounds (Kloster Banz, Germany, 2000). This report was followed by the intense effort of multiple groups... (Read more)
« Previous
1
Next »
(2 hits, 1/1)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)