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- 1. J. Appl. Phys. 30, 1195 (1959) , “Paramagnetic Resonance in Electron Irradiated Silicon”, G. Bemski.Electron spin resonance has been observed in n-type silicon irradiated with 0.5-Mev electrons. The particular resonance lines discussed here appear only in pulled crystals which contain about 1018 oxygen atoms per cm3. The lines do not appear in floating zone crystals... (Read more)Si| EPR electron-irradiation| A Oxygen Silicon pair(=2) vacancy .inp files: Si/V-O | last update: Takahide Umeda
- 2. Phys. Rev. Lett. 7, 314 (1961) , “Silicon Divacancy and Its Direct Production by Electron Irradiation”, J. W. Corbett and G. D. WatkinsTo date two defects produced in radiation damage of silicon hava been identified.These defects are a vacancy-oxygeon pair and a vacancy-phosphorous pair. They were identified largely by their associated electron spin resonance spectra and have been labeled the Si-A and Si-E... (Read more)Si| EPR electron-irradiation| G6 Silicon pair(=2) vacancy .inp files: Si/V2+ | last update: Takashi Fukushima
- 3. Phys. Rev. 121, 1001 (1961) , “Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center”, G. D. Watkins, J. W. Corbett.The Si-A center is a major, radiation-damage defect produced in "pulled" silicon by a room temperature irradiation. As a result of studies described in this paper (I), and the following one (II), it is concluded that this center is a lattice vacancy with an oxygen atom impurity bridging two of the... (Read more)
- 4. Phys. Rev. 132, 648 (1963) , “Spin-1 Centers in Neutron-Irradiated Silicon”, Wun Jung and G. S. NewellElectron paramagnetic resonance was used to study a number of fast-neutron-induced defects formed in pile-irradiated silicon and to follow their concentrations as a function of annealing. Measurements were made at 300, 77, and 4.2°K on samples which had attained intrinsic resistivity during... (Read more)
- 5. J. Phys. Soc. Jpn. sppl. II, 18, 22 (1963) , “An EPR Study of the Lattice Vacancy in Silicon”, G. D. Watkins.An EPR spectrum is observed in silicon which is identified as arising from the isolated lattice vacancy. It is observed in p-type silicon which has been irradiated in situ at~40ºK by 1.5 Mev electrons. A simple molecular orbital treatment of the vacancy is outlined which describes many of the features of the spectrum and predicts the observed anisotrophy as resulting from a Jahn-Teller distortion. Studies of the disappearance of the vacancy vs anneal are described and interpreted in terms of long range migration of the vacancy and subsequent trapping by other defects. The activation energy for vacancy motion is determined to be 0.33±.03 ev in p-type material. Further study is required in n-type silicon before an unambiguous interpretation of the emergence of vacancy-impurity pairs can be made.
- 6. Phys. Rev. 134, A1359 (1964) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center”, G. D. Watkins, J. W. Corbett.The Si-E center is one of the dominant defects produced by electron irradiation in phosphorus-doped vacuum floating zone silicon. It introduces an acceptor level at ?(Ec-0.4) eV and gives rise to an electron paramagnetic resonance when this level does not contain an electron. As a result... (Read more)
- 7. Phys. Rev. 135, A1381-A1385 (1964) , “New Oxygen Infrared Bands in Annealed Irradiated Silicon”, J. W. Corbett, G. D. Watkins, and R. S. McDonaldInfrared and electron-spin-resonance measurements on the recovery of silicon irradiated with 1.5-MeV electrons are presented. In the infrared measurements the disappearance of the previously reported 829-cm-1 (12?) oxygen vibration band is followed, and the appearance and subsequent... (Read more)
- 8. Radiation Damage in Semiconductors 97-113 (1965) , Dunod, Paris , “A Review of EPR Studies in Irradiated Silicon”, G. D. Watkins.1. INTRODUCTION (p.97): 2. THE EPR EXPERIMENT (p.97): 3. RESULTS (p.99): A. The lattice Vacancy (p.99), B. Vacancies Trapped by Other Defects (p.102), C. Vacancy Motion (p.103), D. Interstitial Defects (p.103), E. Other Spectra (p.105), 4. SUMMARY AND CONCLUSION (p.110): 5.ACKNOWLEDGMENTS (p.110):
- 9. Phys. Rev. 138, A543 (1965) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy”, G. D. Watkins and J. W. CorbettTwo electron paramagnetic resonance spectra produced in silicon by 1.5-MeV electron irradiation are described. Labeled Si-G6 and Si-G7, they are identified as arising from the singly positive and singly negative charged states of the divacancy, respectively. The observed hyperfine interactions with... (Read more)
- 10. Phys. Rev. 138, A555 (1965) , “Production of Divacancies and Vacancies by Electron Irradiation of Silicon”, J. W. Corbett and G. D. WatkinsA study is described of the dependence of the room-temperature production of divacancies and vacancies in silicon upon the energy of the bombarding electrons over the range 0.7-56 MeV. For the divacancy, the Si-G6 electron-paramagnetic-resonance spectrum associated with the singly positively charged... (Read more)
- 11. Phys. Rev. 155, 802 (1967) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair”, G. D. Watkins.An EPR spectrum produced in aluminum-doped silicon by 1.5-MeV electron irradiation is described. Labeled Si G9, it is identified as arising from an aluminum-vacancy pair, presumably formed when a mobile lattice vacancy is trapped by substitutional aluminum. The resonance is observed only upon... (Read more)
- 12. Phys. Rev. 174, 881 (1968) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs”, Edward L. Elkin and G. D. WatkinsTwo EPR spectra are observed in irradiated silicon (designated Si-G23 and Si-G24) which are identified with the neutral charge states of a lattice vacancy adjacent to a substitutional arsenic or antimony atom, respectively. EPR and ENDOR studies reveal a high degree of similarity between these... (Read more)
- 13. Solid State Commun. 8, 1359-1361 (1970) , “Electron paramagnetic resonance associated with Zn vacancies in neutron-irradiated ZnO”, A. L. Taylor, G. Filipovich and G. K. LindebergLines in the EPR spectrum of ZnO crystals irradiated by 3.6 × 1018cm−2 fast neutrons are ascribed to holes on oxygen atoms in the basal plane of O4 tetrahedra which surround Zn vacancies. (Read more)
- 14. Phys. Lett. A 33, 1-2 (1970) , “ESR spectra of the zinc vacancy in ZnO”, D. Galland and A. HerveElectron irradiated ZnO single crystals show anisotropic ESR spectra corresponding to a spin and a spin 1 hole centers. Tehy are respectively identified as the negative and the neutral charge states of the zinc vacancy. (Read more)
- 15. Phys. Rev. B 4, 1968 (1971) , “Electron Paramagnetic Resonance of the Neutral (S=1) One-Vacancy-Oxygen Center in Irradiated Silicon”, K. L. Brower.A new EPR spectrum, labeled Si-S1, has been observed in electron- or neutron-irradiated, n- or p-type, crucible-grown silicon under illumination with approximately band-gap light. The Si-S1 spectrum consists primarily of a fine-structure spectrum and a 29Si hyperfine spectrum. By... (Read more)
- 16. Radiat. Eff. 15, 77 (1972) , “New EPR Spectra in Neutron-Irradiated Silicon”, Y. H. Lee, Y. M. Kim, J. W. Corbett.Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the giving rise to these spectra.
- 17. Phys. Rev. B 5, 3988 (1972) , “Electron-Paramagnetic-Resonance Detection of Optically Induced Divacancy Alignment in Silicon”, C. A. J. Ammerlaan, G. D. Watkins.An EPR study was made of the divacancy in silicon, produced by 1.5-MeV electron irradiation at room temperature, under illumination with polarized light. A light-induced alignment of divacancies among the various Jahn-Teller distortion directions in the lattice is observed for the singly positively... (Read more)
- 18. Phys. Rev. B 5, 4274 (1972) , “17O Hyperfine Structure of the Neutral (S=1) Vacancy-Oxygen Center in Ion-Implanted Silicon”, K. L. Brower.The intensity of the 17O hyperfine spectrum associated with the 28Si-17O-28Si isotopic configuration of the vacancy-oxygen (Si-S1) center was enhanced by ion implantation of 17O into silicon. The Si-S1 17O hyperfine spectrum was... (Read more)Si| EPR ion-implantation| 17O Oxygen SL1 pair(=2) vacancy .inp files: Si/V-O* | last update: Takahide Umeda
- 19. J. Appl. Phys. 43, 3499-3506 (1972) , “Electron Paramagnetic Resonance of the lattice Damage in Oxygen-Implanted Silicon”, K.L. Brower and Wendland BeezholdThe nature of the lattice damage produced at room temperature in ion-implanted intrinsic and n-type silicon has been studied as a function of 160-keV O+ ion fluence using electron paramagnetic resonance (EPR). The known EPR spectra observed were the negative divacancy (Si-G7), the... (Read more)Si| EPR ion-implantation neutron-irradiation| 31P D G7 Oxygen P3 Phosphorus S1 S2 SL2 Silicon amorphous vacancy .inp files: Si/SL2 | last update: Takahide Umeda
- 20. Phys. Rev. B 8, 2810 (1973) , “EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster (V5-)”, Y. H. Lee, J. W. Corbett.EPR studies are carried out for the float-zone intrinsic silicon irradiated with reactor neutrons up to the total fluence 1018 n/cm2. Details of the Si29 hyperfine structure and of the g tensor in the P-1 spectrum are observed with respect to temperature from 77 to... (Read more)Si| EPR neutron-irradiation| 29Si P1 Silicon cluster(>3) vacancy .inp files: Si/V5- | last update: Takahide Umeda
- 21. Solid State Commun. 14, 953-956 (1974) , “Temperature dependence of the ESR spectrum of the zinc vacancy in ZnO”, D. Galland and A. HerveThe temperature dependence of the spectrum of two trapped hole centers introduced by electron irradiation in ZnO is described. The results firmly establish the identification of these centers as being two slightly inequivalent configurations of the zinc vacancy in its negative charge state. (Read more)
- 22. Phys. Rev. B 9, 4351-4361 (1974) , “EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress”, Young-Hoon Lee and James W. CorbettThe stress effect in an EPR study is first treated rigorously in terms of the piezospectroscopic tensor, taking account of the local symmetry of a defect. It is found that the degree of alignment (n?/n?) provides incisive information on the structure of a defect; in general, a... (Read more)
- 23. Solid State Commun. 16, 171 (1975) , “On the Role of Defect Charge State in the Stability of Point Defects in Silicon”, L. C. Kimerling, H. M. DeAngelis, J. W. Diebold.Defect annealing in 1-MeV electron-irradiated, phosphorus-doped silicon is studied. Charge state effects are explored directly using a p-n junction structure. A defect state which is associated with the E center (phosphorus-vacancy pair) is found to disappear at approximately 150°C with an... (Read more)
- 24. Phys. Rev. B 12, 4383 (1975) , “Defects in Irradiated Silicon: EPR of the Tin-Vacancy Pair”, G. D. Watkins.An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S=1. Studies versus wavelength of illumination indicate that it has a donor level at ?Ev+0.35 eV. Analysis of the... (Read more)
- 25. Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London , “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon”, G. D. Watkins.EPR studies of silicon irradiated at 20.4 K and 4.2 K by 1.5 MeV and 46 MeV electrons are described. In 46 MeV irradiations the dominant defects formed appear to be divavancies and other multiple defect aggregates which liberate vacancies throughout the anneal to room temperature as they reorder, recombine, etc. For 1.5 MeV irradiations group III atoms play a vital role in p- and n-type materials in trapping interstitials and stabilizing damage. Carbon and oxygen are not effective interstitial traps at these temperatures. Evidence of limited vacancy migration during irradiation is also cited. Two distinct excited configurations of vacancy-oxygen pairs are identified as precursors to A-centre formation in n-type silicon. The kinetics for their conversion to A-centres depends strongly upon the Fermi level as does the isolated vacancy migration energy whhich is measured to be 0.18 ± 0.02 eV for the Vï¼ charge state. The vacancy has four charge states, V+, V0, Vï¼ and Vï¼. Kinetics for hole release from V+ reveals an activation barrier of 0.057 eV. The concentration of V+ at 20.4 K in boron-doped material indicates the corresponding donor level even closer to the band edge, approximately EV + 0.039 eV. Jahn-Teller energies for V0, V+, and Vï¼ are estimated from stress-alignment studies and confirmed to be large. Kinetics studies for reorientation from one Jahn-Teller distortion to another are also described for each charge state.
- 26. Z. Physik B 23, 171-181 (1976) , “Intrinsic Defects in Electron Irradiated Zinc Oxide”, B. Schallenberge, A. Hausmann
- 27. Phys. Rev. B 13, 2511 (1976) , “EPR of a Trapped Vacancy in Boron-Doped Silicon”, G. D. Watkins.An S=1/2 EPR spectrum, labeled Si-G10, is tentatively identified as a lattice vacancy trapped by substitutional boron in silicon. It is produced in boron-doped vacuum floating-zone silicon by 1.5-MeV-electron irradiation at 20.4 K followed by an anneal at ? 180 K, where the isolated vacancy... (Read more)
- 28. Phys. Rev. B 13, 2653 (1976) , “EPR Studies of Defects in Electron-Irradiated Silicon: A Triplet State of Vacancy-Oxygen Complexes”, Young-Hoon Lee and James W. CorbettThree new EPR spectra (Si-A 14, -A 15, and -A 16) and two previously known spectra (Si-P2 and -P4) are observed for the first time in electron-irradiated silicon. The microscopic defect models are established as multivacancy-oxygen complexes with the oxygen(s) in Si-O-Si structure inside the ... (Read more)
- 29. Appl. Phys. Lett. 29, 265 (1976) , “EPR Evidence for a Positively Charged Vacancy-Oxygen Defect in Silicon”, Paul R. BrosiousA new EPR spectrum, labeled Si-I3, has been observed in electron-irradiated n-type Czochralski silicon illuminated with approximately band-gap light. The g-tensor symmetry, the g shifts from the free-electron value, and the temperature dependence of the spectrum amplitude lead to the... (Read more)
- 30. Phys. Lett. A 60, 55 (1977) , “Oxygen-vibrational bands in irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.A correlation is made between the EPR spectra and the IR absorption bands for the known multivacancy-oxygen complexes in irradiated silicon. (Read more)
- 31. Solid State Commun. 28, 221 (1978) , “On the Production of Paramagnetic Defects in Silicon by Electron Irradiation”, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanMonocrystalline silicon samples of different impurity contents have been irradiated with 1.5 MeV electrons in order to produce divacancies in their negative charge state. In these samples different combinations of defects have been observed with electron paramagnetic resonance. The conditions for... (Read more)
- 32. J. Vac. Sci. Technol. 15, 1298-1310 (1978) , “Reactions of oxygen with ZnO–100-surfaces”, W. GöpelInvestigations are reported on the reaction of oxygen with electrostatic neutral ZnO100-surfaces studied by means of AES, LEED, EPR, thermal desorption spectroscopy, and isotopic exchange as well as changes in the surface conductivity and work function. Geometric and electronic structures of... (Read more)
- 33. Sov. Phys. Solid State 23, 2126 (1981) , “Electron spin resonance of exchange-coupled vacancy pairs in hexagonal silicon carbide”, V. S. Va?ner, V. A. ll’in
- 34. Solid State Commun. 43, 41 (1982) , “The Neutral Divacancy in Silicon”, E. G. Sieverts, J. W. Corbett.Extended Hückel Theory calculations have been carried out on a cluster of silicon atoms to examine the relative stability of two configurations of the divacancy: (1) two vacancies on adjacent sites, i.e. the "normal" divacancy configuration; and (2) two vacancies separated by two... (Read more)
- 35. Phys. Rev. Lett. 51, 423 (1983) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, Katsumi Tanimura, Takeshi Tanaka, and Noriaki ItohThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 36. Phys. Lett. A 99, 117 (1983) , “Low-Symmetry EPR Center in Hydrogen-Implanted Silicon”, Yu.V. Gorelkinskii, N.N. NevinnyiA new S = 1/2 EPR spectrum, labeled Si-AA2, arises from a negative-charge-state defect which has a low symmetry(C1). It is produced in crystalline silicon by hydrogen implantation at ≈20°C followed by annealing at ≈580°C and disappears completely at 700°C. The kinetics... (Read more)Si| EPR ion-implantation| 29Si AA2 C1 Hydrogen Si-H Vsi cluster(>3) p-type triclinic vacancy .inp files: Si/AA2/AA2.inp | last update: Takahide Umeda
- 37. J. Appl. Phys. 54, 179-183 (1983) , “The Mechanism of the Enhancement of Divacancy Production by Oxygen During Electron Irradiation of Silicon. II. Computer Modeling”, G. S. Oehrlein, I. Krafcsik, J. L. Lindström, A. E. Jaworowski, and J. W. CorbettNumerical tests of possible models for the oxygen dependence of the divacancy introduction rate in silicon electron irradiated at room temperature were performed on a computer. Only the model in which oxygen traps Si self-interstitials can reproduce all the experimental data. Our modeling results... (Read more)
- 38. phys. stat. sol. (a) 86, 313 (1984) , “New EPR Defects in Si<Al>”, A. V. Dvurechenskii, B. P. Kashnikov, V. V. Suprunchik.Two new paramagnetic centres, labeled Si-H5 and Si-H6 are found in silicon containing aluminium (6 × 1017 to 5 × 1018 cm-3) and irradiated with high dose of 1 Me V electrons (up to 2 × 1020 cm-2). Spin-Hamiltonian constants of the Si-H5... (Read more)
- 39. phys. stat. sol. (a) 92, K53 (1985) , “Low Symmetry Centre in Silicon”, A. V. Dvurechenskii, V. V. Suprunchik.Investigation of the defect formation in heavily doped silicon irradiated by high dose of electrons have led to the discovery of new types of defects /1, 2/. The present note is the next one of this series. A new centre is investigated in p-type silicon irradiated by neutrons. (Read more)Si| EPR neutron-irradiation| A5 C1 H8 P3 P6 Sii Vsi interstitial p-type triclinic vacancy .inp files: Si/H8/H8.inp | last update: Takahide Umeda
- 40. Phys. Lett. A 110, 157 (1985) , “EPR of Neutral Vacancy-Helium Centers in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevIn this letter we report the first observation by EPR of helium-associated defects in solid. Two new (S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and... (Read more)
- 41. Solid State Commun. 61, 199-202 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun, Qin Guo-gang
- 42. Phys. Rev. B 35, 1582 (1987) , “Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon”, M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanIn electron-irradiated boron-doped silicon the electron paramagnetic resonance spectrum Si-G10 has been studied. Earlier this spectrum had tentatively been identified with a boron-vacancy complex in a next-nearest-neighbor configuration. With electron-nuclear double resonance the hyperfine and... (Read more)
- 43. Phys. Lett. A 125, 354 (1987) , “EPR Evidence of Helium-Oxygen-Vacancy Complexes in Crystalline Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevTwo new (S = 1) EPR spectra, labeled Si-AA7 and Si-AA8, arise from a helium-associated defect in crystalline silicon. Both are produced only in Czochralski-grown silicon by helium ion implantation at ≈ 20°C followed by annealing at ≈ 180°C and are stable to ≈... (Read more)Si| EPR| AA10 AA7 AA8 Helium vacancy .inp files: Si/V-He-O2 Si/AA10 Si/V-He-O1 | last update: Takeo Kitamura
- 44. Phys. Rev. B 38, 12752(R) (1988) , “Formation energies, abundances, and the electronic structure of native defects in cubic SiC”, C. Wang, J. Bernholc, R. F. DavisThe relative abundance of native point defects in cubic SiC has been studied via ab initio calculations as a function of composition and the Fermi-level position. For Si-rich cubic SiC, the SiC antisite is the dominant defect in n-type material, while the carbon vacancy, which is a double... (Read more)
- 45. Phys. Rev. B 38, 3395-3399 (1988) , “Electrical and Optical Properties of Defects in Silicon Introduced by High-Temperature Electron Irradiation”, Jian-Guo Xu, Fang Lu, and Heng-Hui Sun2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy Ec-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present... (Read more)
- 46. J. Appl. Phys. 66, 4529 (1989) , “Electron spin resonance in electron-irradiated 3C-SiC”, Hisayoshi Itoh, Naohiro Hayakawa, Isamu Nashiyama, Eiichiro SakumaElectron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a g value of... (Read more)
- 47. Physica B 170, 155-167 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V. Gorelkinskii, N.N. Nevinnyi
- 48. Phys. Rev. Lett. 67, 2517 (1991) , “Experimental evidence for excitonic mechanism of defect generation in high-purity silica”, T. E. Tsai and D. L. GriscomDirect evidence for the creation of oxygen-vacancy, oxygen-interstitial pairs in SiO2 glasses by an excitonic mechanism is developed from an electron-spin-resonance study of high-purity fused silicas exposed to highly focused 6.4-eV excimer laser light. (Read more)
- 49. Phys. Rev. B 46, 12335 (1992) , “Microscopic mechanism of atomic diffusion in Si under pressure ”, Osamu Sugino and Atsushi OshiyamaWe have performed the first-principles total-energy calculations on the atomic diffusion of group-V impurities in Si, and have revealed the pressure effect on the activation energy of the diffusion. For the vacancy mechanism, the activation energies for P, As, and Sb decrease with pressure. For the... (Read more)
- 50. Proc. symp. on the degradation od electronic devices due to device operation as well as crystalline and process-induced defects 94-1, 221-234 (1994) , ECS (ISBN:1-56677-037-8) , “Spin dependent recombination in Si p-n junctions”, B. K. Meyer , P. Christmann , W. Stadler, H. Overhof, J.-M. Spaeth, S. Greulich-Weber, B. Stich
- 51. J. Non-Cryst. Solids 179, 1-9 (1994) , “The many varieties of E′ centers: a review”, Robert A. WeeksThree varieties of E′ centers with a spin state, S = 1/2, and with a G-tensor, Gx Gy 2.0003, Gz 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz. The atomic structure of two of these had an hydrogen ion (proton) in nearby sites and hence... (Read more)
- 52. Phys. Rev. B 51, 1928 (1995) , “Carbon and silicon vacancies in electron-irradiated 6H-SiC”, S. Dannefaer, D. Craigen, D. KerrPositron-lifetime and Doppler-broadening spectroscopies were used to investigate vacancies formed by 2.2- and 10-MeV electrons. Carbon vacancies yield a positron lifetime of 160 ps, only 15 ps longer than the bulk lifetime, and the Doppler-broadening S parameter is very close to that for the bulk.... (Read more)
- 53. J. Appl. Phys. 77, 837 (1995) , “Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si”, Hisayoshi Itoh, Masahito Yoshikawa, Isamu Nashiyama, Hajime Okumura, Shunji Misawa, Sadafumi YoshidaPhotoluminescence (PL) has been used to study defects introduced by 1-MeV-electron irradiation in cubic silicon carbide (3C-SiC) films epitaxially grown on Si substrates by means of chemical vapor deposition. A dominant PL line of 1.913 eV observed in 3C-SiC irradiated with electrons was found to... (Read more)
- 54. Appl. Phys. Lett. 67, 1280 (1995) , “Impact of Pb doping on the optical and electronic properties of ZnO powders”, K. Vanheusden, W. L. Warren, J. A. Voigt, C. H. Seager, and D. R. TallantElectron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic powders. We observe a decrease in the 2.26 eV emission peak and a concomitant smearing of the band edges, narrowing the effective gap of the... (Read more)
- 55. J. Appl. Phys. 79, 7983-7990 (1996) , “Mechanisms behind green photoluminescence in ZnO phosphor powders”, K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, B. E. GnadeWe explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green... (Read more)
- 56. Appl. Phys. Lett. 68, 403 (1996) , “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors”, K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. VoigtBy combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders.... (Read more)
- 57. Phys. Rev. Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”, B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen
- 58. Phys. Rev. B 55, 2863 (1997) , “Optically detected magnetic resonance studies of defects in electron-irradiated 3C SiC layers”, N. T. Son, E. Sörman, W. M. Chen, C. Hallin, O. Kordina, B. Monemar, and E. JanzénDefects in electron-irradiated 3C SiC were studied by optically detected magnetic resonance (ODMR). In addition to the isotropic L2 center previously reported, an ODMR spectrum labeled L3, with a trigonal symmetry and an effective electron spin S=1, was observed after annealing at ?750 °C. The g... (Read more)
- 59. Phys. Rev. B 56, 7384 (1997) , “Negatively charged Si vacancy in 4H SiC: A comparison between theory and experiment”, T. Wimbauer, B. K. Meyer, A. Hofstaetter, A. Scharmann, H. OverhofWe use electron paramagnetic resonance and electron nuclear double resonance to identify the negatively charged Si vacancy in neutron-irradiated 4H SiC. The identification is based on resolved ligand hyperfine interactions with carbon and silicon nearest and next nearest neighbors and on the... (Read more)
- 60. phys. stat. sol. (b) 210, 13 (1998) , “Neutral Vacancies in Group-IV Semiconductors”, A. Zywietz, J. Furthmüller, F. BechstedtAb initio plane-wave-supercell calculations are performed for the neutral monovacancies in silicon, silicon carbide and diamond using ultrasoft non-normconserving Vanderbilt pseudopotentials. We study the structure, the energetics and the single-particle energy spectrum. The local symmetry, the... (Read more)
- 61. Phys. Rev. Lett. 80, 317-320 (1998) , “Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2 by Electronic Excitation”, H. Hosono, H. Kawazoe, N. MatsunamiConcentrations of defects in amorphous SiO2 created by implantation of 10 MeV protons were examined. The depth profile of Si-Si bonds, E? centers, or peroxy radicals (PORs) was close to that of electronic energy loss. Interstitial O2 molecules were identified and... (Read more)
- 62. Phys. Rev. B 57, 1607 (1998) , “Electronic structure of the deep boron acceptor in boron-doped 6H-SiC”, A. v. Duijn-Arnold, T. Ikoma, O. G. Poluektov, P. G. Baranov, E. N. Mokhov, J. SchmidtA high-frequency (95 GHz) and conventional-frequency (9.3 GHz) pulsed electron paramagnetic resonance and electron-nuclear double resonance (ENDOR) study is reported on the deep boron acceptor in 6H-SiC. The results support a model in which the deep boron acceptor consists of a boron on a silicon... (Read more)
- 63. J. Non-Cryst. Solids 239, 16-48 (1998) , “Optically active oxygen-deficiency-related centers in amorphous silicon dioxide”, Linards SkujaThe spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic... (Read more)GeO2 SiO2| EPR PL gamma-irradiation optical-spectroscopy| 0.5-1.0eV 1.0eV~ 1H 2.0eV~ 3.0eV~ 4.0eV~ 5.0eV~(larger) Chlorine E' E'-alpha E'-betha E'-delta E'-gamma Germanium H(I) H(II) Hydrogen ODC ODC(I) ODC(II) OHC Oxygen POR Silicon amorphous dangling-bond dielectric interstitial pair(=2) surface triplet vacancy | last update: Takahide Umeda
- 64. Appl. Phys. A 67, 209 (1998) , “Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance”, A. Kawasuso, H. Itoh, N. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama, S. Okada, H. Okumura, S. YoshidaPositron lifetime and electron spin resonance (ESR) measurements were performed for 1-MeV electronirradiated cubic silicon carbide (3C-SiC). From a comparison of the annealing behaviors of positron lifetime and ESR signal, we identified the annihilation of positrons localized at single-negative silicon vacancies. The positron lifetime at silicon vacancies was first determined experimentally to be 188|±|4 ps. This value agrees well with the theoretical positron lifetime for silicon vacancies [G. Brauer et al. Phys. Rev. B 54, 2512 (1996)]. The trapping coefficient of singlenegative silicon vacancies was also derived. (Read more)
- 65. Semicond. Sci. Technol. 14, 1141 (1999) , “Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC”, N. T. Son, P. N. Hai, Mt. Wagner, W. M. Chen, A. Ellison, C. Hallin, B. Monemar, E. Janzén
- 66. phys. stat. sol. (b) 210, 13 (1999) , “Neutral Vacancies in Group-IV Semiconductors”, A. Zywietz, J. Furthmüller, F. BechstedtAb initio plane-wave-supercell calculations are performed for the neutral monovacancies in silicon, silicon carbide and diamond using ultrasoft non-normconserving Vanderbilt pseudopotentials. We study the structure, the energetics and the single-particle energy spectrum. The local symmetry, the... (Read more)
- 67. Phys. Rev. Lett. 83, 372 (1999) , “Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica”, Peter E. Blöchl and James H. StathisHydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, are analyzed using first-principles calculations. Energetics and charge-state levels of oxygen vacancies, hydrogen, and their complexes in the silica framework are mapped out. The neutral hydrogen... (Read more)
- 68. Phys. Rev. B 59, 10603 (1999) , “Defect characterization in electron-irradiated 6H-SiC by positron annihilation”, A. Polity, S. Huth, M. LausmannIsochronal annealing investigations in electron-irradiated 6H-SiC were correlated with temperature-dependent measurements of positron lifetime. It turned out that the positron trapping at temperatures up to 300 K was dominated by the trapping in shallow positron traps. These defects were already... (Read more)
- 69. Phys. Rev. B 59, 10823-10829 (1999) , “Defect energy levels in electron-irradiated and deuterium-implanted 6H silicon carbide”, M. O. Aboelfotoh, J. P. DoyleUsing deep-level transient spectroscopy, we studied defect energy levels and their annealing behavior in nitrogen-doped 6H-SiC epitaxial layers irradiated with 2-MeV electrons and implanted with 300-KeV deuterium or hydrogen at room temperature. Five levels located at Ec-0.34,... (Read more)
- 70. Phys. Rev. B 59, 12900 (1999) , “Electron-paramagnetic-resonance measurements on the divacancy defect center R4/W6 in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. BanholzerElectron-paramagnetic-resonance (EPR) studies in radiation damaged diamond enriched to 5% 13C have resulted in the identification of the nearest-neighbor divacancy center. It is the isotopic enrichment, and consequent observation of 13C hyperfine lines, that has permitted the... (Read more)
- 71. Phys. Rev. B 59, 15166 (1999) , “Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure”, A. Zywietz, J. Furthmüller, and F. BechstedtWe present results of first-principles calculations for the neutral and charged Si and C monovacancies in cubic (3C) and hexagonal (4H) SiC. The calculations are based on the density functional theory in the local-density approximation as well as local spin density approximation. Explicitly a... (Read more)
- 72. Mater. Sci. Eng. B 61-62, 202 (1999) , “Carbon-vacancy related defects in 4H- and 6H-SiC”, N. T. Son, W. M. Chen, J. L. Lindström, B. Monemar, E. JanzénElectron paramagnetic resonance (EPR) was used to study intrinsic defects in 4H- and 6H-SiC irradiated with 2.5 MeV electrons with doses ranging from 1×1017 to 2×1018 cm−2. In p-type 4H- and 6H-SiC, the dominant EPR signal, labeled EI1, associates with a defect centre having a low... (Read more)
- 73. Phys. Rev. B 61, 12602 (2000) , “Phosphorus-related deep donor in SiC”, A. Gali, P. Deák, P. R. Briddon, R. P. Devaty, W. J. ChoykeTwo phosphorus centers in SiC, an isolated P atom substituting for Si (PSi) and a Si-site P-atom adjacent to a carbon vacancy (PSi+VC) are investigated by first principle calculations. It is shown that PSi+VC produces a singly occupied donor... (Read more)
- 74. Phys. Rev. B 61, 13655 (2000) , “Intravacancy transition energies in 3C- and 4H-SiC”, A. Zywietz, J. Furthmüller, F. BechstedtSpin-polarized ab initio calculations are used to determine energy differences between ground and excited states of silicon and carbon vacancies in 3C- and 4H-SiC. The calculated transition energies are compared with recent findings from photoluminescence and magnetic-resonance experiments. (Read more)
- 75. Phys. Rev. B 61, 2657 (2000) , “Divacancy-Tin Complexes in Electron-Irradiated Silicon Studied by EPR”, M. Fanciulli, J. R. Byberg.n- and p-type float-zone silicon containing 1018-cm-3 tin were irradiated with 2 MeV electrons to a dose of 1018 cm-2 and subsequently examined by electron paramagnetic resonance (EPR). The p-type material yields only the well-known Si-G29 signal due to... (Read more)
- 76. Phys. Rev. B 61, 4659-4666 (2000) , “Identification of the Oxygen-Vacancy Defect Containing a Single Hydrogen Atom in Crystalline Silicon”, P. Johannesen, B. Bech Nielsen, J. R. Byberg.Float-zone and Czochralski-grown silicon crystals have been implanted with protons or deuterons at ?50 K. Electron paramagnetic resonance measurements reveal a new signal in the spectrum of the Czochralski-grown (oxygen-rich) material. This signal is strongly temperature dependent, displaying a... (Read more)
- 77. Phys. Rev. B 62, 10126 (2000) , “Proton-implantation-induced defects in n-type 6H- and 4H-SiC: An electron paramagnetic resonance study”, H. J. von Bardeleben, J. L. Cantin, I. Vickridge, G. BattistigThe microscopic structure and introduction rate of point defects in n-type 6H- and 4H-SiC generated by room-temperature proton implantation have been studied by the electron paramagnetic resonance technique. In order to selectively study the effects of defect introduction in the trace region, 12-MeV... (Read more)
- 78. Phys. Rev. B 62, 10841 (2000) , “Vacancy defects in p-type 6H-SiC created by low-energy electron irradiation”, H. J. von Bardeleben, J. L. Cantin, L. Henry, M. F. BartheThe intrinsic defects in p-type 6H-SiC:Al generated by electron irradiation at 300 keV, which is close to the threshold of the silicon atom displacement, have been studied by electron paramagnetic resonance spectroscopy. We observed two dominant irradiation-induced paramagnetic defects:?(i) a... (Read more)
- 79. Phys. Rev. B 62, 6854 (2000) , “Spin state of vacancies: From magnetic Jahn-Teller distortions to multiplets”, A. Zywietz, J. Furthmüller, and F. BechstedtThe spin configuration of isoelectronic vacancies surrounded by first-row atoms is studied within density-functional theory (DFT) using the local spin density approximation. Allowing for a symmetry break in the electronic system, a mixed-spin state is found to be lowest in energy. It is accompanied... (Read more)
- 80. Phys. Rev. B 62, 8016 (2000) , “Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy”, C. C. Ling, C. D. Beling, S. Fungn-type 6H silicon carbide has been studied using positron lifetime spectroscopy with isochronal annealing temperatures of 400, 650, 900, 1200, and 1400 °C. In the as-grown sample, we have identified the VSi vacancy, the VCVSi divacancy, and probably the VC... (Read more)
- 81. Mater. Sci. Eng. B 71, 249 (2000) , “New (S=1) EPR AA17 center in silicon — microplatelets or precursor of platelets?”, Yu. V. Gorelkinskii, Kh. A. Abdullin, B. N. Mukashev.New (S=1) EPR spectrum (labeled Si-AA17) is observed in irradiated high-purity hydrogen-contained silicon after annealing at ≥200°C. The AA17 defect has D3d symmetry with g=2.0028, g=2.0106; A(29Si)=175.0 MHz, A=89.0 MHz; and D=±33.6 MHz, D=±16.8 MHz. It is paramagnetic in a... (Read more)
- 82. Mater. Sci. Eng. B 73, 60-63 (2000) , “EPR study of He-implanted Si”, B. Pivac, B. Rakvin, R. Tonini, F. Corni and G. OttavianiElectron paramagnetic resonance has been used to study the influence of thermal treatments on defect evolution in helium-implanted Czochralski single-crystal silicon. It is shown that the thermal treatment induces helium migration and capturing by vacancy clusters that transform into pressurized... (Read more)
- 83. J. Phys.: Condens. Matter 12, 3369 (2000) , “Local electronic structure around vacancies and vacancy-antisite complexes in ?-SiC”, G. Cubiotti, Yu. Kucherenko, A. Yaresko, A. Perlov, V. AntonovThe local electronic structure around vacancies and vacancy-antisite complexes in cubic SiC has been calculated by means of the LMTO (linear muffin-tin orbital) method and the supercell approach. In order to improve the description of the electronic structure near the energy gap, the... (Read more)
- 84. Physica B 302-303, 249-256 (2001) , “Hydrogen-Enhanced Clusterization of Intrinsic Defects and Impurities in Silicon”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, M. F. Tamendarov and S. Zh. TokmoldinFormation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)
- 85. Physica B 308-310, 621 (2001) , “Positively charged carbon vacancy in 6H–SiC: EPR study”, V. Ya. Bratus, I. N. Makeeva, S. M. Okulov, T. L. Petrenko, T. T. Petrenko and H. J. von BardelebenThe low-temperature X-band EPR study of Ky1 and Ky2 centers assigned to positively charged carbon vacancy (VC+) in two quasicubic sites of 6H–SiC crystal is presented. The CS symmetry, spin S=1/2 and close coincidence of the g-tensor components have been revealed. The principal values of... (Read more)
- 86. Physica B 308-310, 637 (2001) , “Calculation of hyperfine parameters of positively charged carbon vacancy in SiC”, T. T. Petrenko, T. L. Petrenko, V. Ya. Bratus and J. L. MongeTheoretical simulation of hyperfine parameters for the nearest and next-nearest neighbor atoms of VC+ in SiC has been performed for the cubic and hexagonal clusters. The gradient-corrected all-electron DFT calculations with Becke's three-parameter functional have been performed by the use of split... (Read more)
- 87. Phys. Rev. Lett. 87, 45502 (2001) , “Silicon Antisite in 4H SiC”, N. T. Son, P. N. Hai, E. JanzénElectron paramagnetic resonance spectrum with C3V symmetry and a spin S = 1/2 has been observed in p-type, electron-irradiated 4H SiC. Based on the observed 29Si hyperfine structures it is suggested that the defect is the isolated silicon antisite (SiC). The spin... (Read more)
- 88. Phys. Rev. B 63, 201201(R) (2001) , “Carbon vacancy-related defect in 4H and 6H SiC”, N. T. Son, P. N. Hai, E. JanzénAn electron paramagnetic resonance (EPR) spectrum was observed at temperatures above 25 K in p-type 4H and 6H SiC irradiated with electrons. The center has C3V symmetry with an electron spin S=1/2. Using high frequency (?95 GHz) EPR it was possible to obtain the detailed hyperfine... (Read more)
- 89. Phys. Rev. B 63, 245202 (2001) , “Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC”, B. Aradi, A. Gali, P. Deák, J. E. Lowther, N. T. Son, E. Janzén, W. J. ChoykeBased on ab initio density-functional calculations in supercells of 3C-SiC, the stable configurations of hydrogen and dihydrogen defects have been established. The calculated formation energies are used to give semiquantitative estimates for the concentration of hydrogen in SiC after chemical vapor... (Read more)
- 90. Phys. Rev. B 64, 245208 (2001) , “Ab initio and empirical-potential studies of defect properties in 3C-SiC”, Fei Gao, Eric J. Bylaska, William J. Weber, L. René CorralesDensity functional theory (DFT) is used to study the formation and properties of native defects in 3C-SiC. Extensive calculations have been carried out to determine the formation of point defects and the stability of self-interstitials. Although there is good agreement in the formation of vacancies... (Read more)
- 91. Phys. Rev. B 64, 245212 (2001) , “Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy-carbon antisite pair”, Th. Lingner, S. Greulich-Weber, J.-M. Spaeth, U. Gerstmann, E. Rauls, Z. Hajnal, Th. Frauenheim, H. OverhofWe investigated radiation-induced defects in neutron-irradiated and subsequently annealed 6H-silicon carbide (SiC) with electron paramagnetic resonance (EPR), the magnetic circular dichroism of the absorption (MCDA), and MCDA-detected EPR (MCDA-EPR). In samples annealed beyond the annealing... (Read more)
- 92. J. Phys.: Condens. Matter 13, 6203-6231 (2001) , “Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC”, L. Torpo, M. Marlo, T. E. M. Staab, R. M. NieminenWe present results of ab initio calculations for the electronic and atomic structures of monovacancies and antisite defects in 4H-SiC in all possible charge states. The calculations make use of a plane-wave pseudopotential method based on density-functional theory and the local spin-density... (Read more)
- 93. J. Appl. Phys. 90, 3377 (2001) , “Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy”, A. Kawasuso, F. Redmann, R. Krause-Rehberg, T. Frank, M. Weidner, G. Pensl, P. Sperr, H. ItohThe annealing behavior of defects in n-type 6H SiC epilayers irradiated with 2 MeV electrons have been studied using positron annihilation and deep level transient spectroscopy. Vacancy-type defects are annealed at 500700 °C and 12001400 °C. From the analysis of... (Read more)
- 94. J. Appl. Phys. 90, 6026-6031 (2001) , “Oxygen-Related Defects in Low-Dose Separation-by-Implanted Oxygen Wafers Probed by Monoenergetic Positron Beams”, A. Uedono, Z. Q. Chen, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, T. Mikado.The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined from measurements of Doppler broadening spectra of the annihilation radiation. Vacanyoxygen complexes were introduced by implanting 180-keV oxygen at (26)×1017 ... (Read more)
- 95. Appl. Phys. Lett. 79, 3950 (2001) , “Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy”, A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshäuser, H. ItohAnnealing behavior of vacancies and the Z1/2 levels in n-type 4HSiC epilayers after 2 MeV electron irradiation has been studied using positron annihilation and deep-level transient spectroscopy. Isochronal annealing studies indicate that silicon vacancy-related defects... (Read more)
- 96. Phys. Rev. Lett. 89, 185501 (2002) , “Identification of Lattice Vacancies on the Two Sublattices of SiC”, A. A. Rempel, W. Sprengel, K. Blaurock, K. J. Reichle, J. Major, and H.-E. SchaeferThe identification of atomic defects in solids is of pivotal interest for understanding atomistic processes and solid state properties. Here we report on the exemplary identification of vacancies on each of the two sublattices of SiC by making use of (i) electron irradiation, (ii) measurements of... (Read more)
- 97. Phys. Rev. B 65, 085202 (2002) , “Divacancy in 3C- and 4H-SiC: An extremely stable defect”, L. Torpo, T. E. M. Staab, R. M. NieminenUsing first-principles calculations for divacancy defects in 3C- and 4H-SiC, we determine their formation energies and stability, their ionization levels, and relaxed geometries (symmetry point groups) for neutral as well as for charged states. For 4H-SiC all four possible nearest-neighbor divacancy... (Read more)
- 98. Phys. Rev. B 66, 155214 (2002) , “Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC”, Mt. Wagner, N. Q. Thinh, N. T. Son, W. M. Chen, E. Janzén, P. G. Baranov, E. N. Mokhov, C. Hallin, J. L. LindströmThe silicon vacancy in its neutral charge state (VSi) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor... (Read more)
- 99. Phys. Rev. B 66, 235202 (2002) , “Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C3v symmetry in n-type 4H-SiC”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. IsoyaThe TV2a center, which was suggested to be the excited triplet state (S=1) of the neutral silicon vacancy related defect [Sörman et al., Phys. Rev. B 61, 2613 (2000)] in the electron-irradiated n-type 4H-SiC has been studied by continuous wave and pulsed electron paramagnetic resonance... (Read more)
- 100. Appl. Phys. Lett. 80, 410 (2002) , “The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance”, M. E. Zvanut and V. V. KonovalovPhotoinduced electron paramagnetic resonance studies performed on nominally semi-insulating, high purity 4H-SiC have revealed charge transfer from an intrinsic defect (ID) to both the shallow boron acceptor and nitrogen donor. At 4 K, incident photon energy between 1.0 and 1.7 eV produces an... (Read more)
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