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- 1. J. Appl. Phys. 94, 3115 (2003) , American Institute of Physics , “Characteristics of deep levels associated with rhodium impurity in n-type GaAs”, M. Zafar Iqbal, A. Majid, Shah Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar and D. Bimberg.,Deep levels have been characterized in n-type GaAs crystalline films grown by metalorganic chemical vapor deposition, doped in situ with 4d transition metal, rhodium, using the deep level transient spectroscopy (DLTS) technique. Two prominent broad bands of deep levels are found... (Read more)
- 2. J. Appl. Phys. 99, 011101 (2006) , “Degradation of hexagonal silicon-carbide-based bipolar devices”, M. Skowronski and S. HaOnly a few years ago, an account of degradation of silicon carbide high-voltage p-i-n diodes was presented at the European Conference on Silicon Carbide and Related Compounds (Kloster Banz, Germany, 2000). This report was followed by the intense effort of multiple groups... (Read more)
- 3. Phys. Rev. Lett. 92, 175504 (2004) , “Driving Force of Stacking-Fault Formation in SiC p–i–n Diodes”, S. Ha, M. Skowronski, J. J. Sumakeris, M. J. Paisley, M. K. DasThe driving force of stacking-fault expansion in SiC pin diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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