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- 1. Phys. Rev. B 75, 195206 (2007) , “Effect of defect-enhanced molecular oxygen adsorption on the imbalance of hole versus electron mobility in conjugated polymers”, Chi-Ken Lu, Shu-Ting Pi, and Hsin-Fei MengThe generally observed higher hole mobility relative to electron mobility in conjugated polymers is explained with the defects and adsorbed molecular oxygen. Adsorption of the extrinsic molecular oxygen leads to that electrons are bound more tightly than holes by the traps in the originally... (Read more)
- 2. Phys. Rev. B 75, 033301 (2007) , “Microscopic evidence for evolution of superconductivity by effective carrier doping in boron-doped diamond: 11B-NMR study”, H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, T. Oguchi, and H. KawaradaWe have investigated the superconductivity discovered in boron-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower... (Read more)
- 3. Phys. Rev. Lett. 98, 216803 (2007) , “High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality, and Perspectives”, G. Herranz, M. Basletić, M. Bibes, C. Carrétéro, E. Tafra, E. Jacquet, K. Bouzehouane, C. Deranlot, A. Hamzić, J.-M. Broto, A. Barthélémy, and A. FertWe have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures... (Read more)
- 4. Phys. Rev. Lett. 98, 186804 (2007) , “Room-Temperature Electron Spin Dynamics in Free-Standing ZnO Quantum Dots”, William K. Liu, Kelly M. Whitaker, Alyssa L. Smith, Kevin R. Kittilstved, Bruce H. Robinson, and Daniel R. GamelinConduction band electrons in colloidal ZnO quantum dots have been prepared photochemically and examined by electron paramagnetic resonance spectroscopy. Nanocrystals of 4.6 nm diameter containing single S-shell conduction band electrons have g*=1.962 and a room-temperature... (Read more)
- 5. Phys. Rev. Lett. 98, 026802 (2007) , “Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy”, Shoji Yoshida, Yuya Kanitani, Ryuji Oshima, Yoshitaka Okada, Osamu Takeuchi, and Hidemi ShigekawaThe doping characteristics and carrier transport in a GaAs p-n junction were visualized with a ~10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The dynamics of minority carriers under operating conditions, such as recombination, diffusion, and electric... (Read more)
- 6. J. Appl. Phys. 100, 063706 (2006) , “Effect of dislocations on minority carrier diffusion length in practical silicon solar cells”, Thomas Kieliba, Stephan Riepe, and Wilhelm WartaIn 1998, Donolato presented an analytical model describing the effect of dislocation density on minority carrier effective diffusion length [J. Appl. Phys. 84, 2656 (1998)]. While this analysis was derived for a "semi-infinite" specimen, our objective is the appropriate description... (Read more)
- 7. J. Appl. Phys. 100, 013501 (2006) , “Contactless electromodulation spectroscopy of AlGaN/GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance”, R. Kudrawiec, M. Syperek, M. Motyka, J. Misiewicz, R. Paszkiewicz, B. Paszkiewicz, M. T?acza?aPhotoreflectance (PR) and contactless electroreflectance (CER) spectroscopies have been applied to study optical transitions in undoped and Si-doped AlGaN/GaN heterostructures at room temperature. Spectral features related to excitonic and band-to-band absorptions in GaN layer and band-to-band... (Read more)
- 8. Phys. Rev. B 74, 245216 (2006) , “Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors”, Hideharu MatsuuraThe density (NA) and energy level (EA) of an acceptor in a p-type wide-band-gap semiconductor (e.g., SiC, GaN, and diamond) are determined by a least-squares fit of the charge neutrality equation to the temperature dependence of the hole... (Read more)
- 9. Phys. Rev. B 74, 245201 (2006) , “Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC”, Antonio Ferreira da Silva, Julien Pernot, Sylvie Contreras, Bo E. Sernelius, Clas Persson, and Jean CamasselThe electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10–700 K for nitrogen concentrations between 3.5×1015 and 5×1019 cm−3. For the highest doped samples, a good agreement is found between the... (Read more)
- 10. Phys. Rev. B 74, 235104 (2006) , “Longitudinal and transverse diffusion of conduction-electron spins on stacks of fluoranthene radical cations”, David Saez de Jauregui, Jürgen Gmeiner, and Elmar DormannThe temperature dependence and anisotropy of the conduction-electron spin diffusion coefficient D(T) of three single crystals of the organic conductor (fluoranthene)2PF6 with defect content varying between 7×10−5 and 1% per formula unit have... (Read more)
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Updated at 2010-07-20 16:50:39
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