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- 1. J. Appl. Phys. 99, 083510 (2006) , “Capture barrier for DX centers in gallium doped Cd1–xMnxTe”, Ewa Placzek-Popko, Anna Nowak, Jan Szatkowski, and Kazimierz SieranskiWe report on the capture barrier for the gallium related DX center in Cd0.99Mn0.01Te. In order to determine the barrier height, two methods were applied: an analysis of the persistent photoconductivity decay and the optical deep level transient spectroscopy... (Read more)
- 2. Phys. Rev. B 45, 5933 (1992) , “Magnetic circular dichroism of the DX center in Al0.35Ga0.65As:Te”, R. E. Peale, Y. Mochizuki, H. Sun, G. D. WatkinsMagneto-optical absorption spectra of 0.4-mm-thick, single-crystal Al0.35Ga0.65As:Te give evidence for two bleachable absorbers, one of which is identified as the DX center. The bleached-state absorption coefficient and magnetic circular dichroism (MCD), measured from 0.66 to... (Read more)
- 3. Phys. Rev. B 45, 13745 (1992) , “Validity of the broken-bond model for the DX center in GaAs”, Mineo Saito, Atsushi Oshiyama, Osamu SuginoThe validity of the broken-bond model for the DX center is examined by performing supercell calculations within the local-density approximation for column-IV donors in GaAs. We confirm that the broken-bond geometry is the most stable among the atomic structures accompanied with large lattice... (Read more)
- 4. J. Phys. Soc. Jpn. 60, 3093 (1991) , “First Principle Calculation of the DX-CenterGround-States in GaAs, AlxGa1-xAs Alloysand AlAs/GaAs Superlattices”, Eiichi Yamaguchi, Kenji Shiraishi, Takahisa OhnoThe atomistic nature of the deep donor levels referred to as DX centers in GaAs, AlxGa1-xAs alloys and AlAs/GaAs superlattices is investigated by applying the ab initio self-consistent pseudopotential method to 64-atom super cells. The total energy and... (Read more)
- 5. Phys. Rev. Lett. 66, 774 (1991) , “Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure”, J. A. Wolk, M. B. Kruger, J. N. Heyman, W. Walukiewicz, R. Jeanloz, E. E. HallerWe report the observation of a local vibrational mode (LVM) in hydrostatically stressed, Si-doped GaAs. The corresponding infrared absorption peak is distinct from the SiGa shallow-donor LVM peak and is assigned to the Si DX center. The relative intensities of the Si DX LVM and the Si... (Read more)
- 6. Semicond. Sci. Technol. 6, B9 (1991) , “Comparison of three DX structural calculations presented at Thessaloniki”, G. A. BaraffThree structural calculations of the DX centre presented at Thessaloniki are of especial interest. Although they were carried out using nominally the same calculational apparatus, namely first-principles pseudopotentials, local density approximation, large unit cells etc, the three reached vastly... (Read more)
- 7. Semicond. Sci. Technol. 6, B70 (1991) , “Bistability, local symmetries and charge states of Sn-related donors in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy”, D. L. Williamson, P. GibartThe bistable character of Sn donors AlxGa1-xAs for x>0.2 or in GaAs under pressure >2.4 GPa has been studied by 119Sn Mossbauer spectroscopy (MS). The shallow Sn donor state and the deep Sn DX state are observed to exist simultaneously and are readily... (Read more)
- 8. Semicond. Sci. Technol. 6, B111 (1991) , “Metastable defects in silicon: hints for DX and EL2?”, G. D. WatkinsA review is given of defects that display metastability in silicon, with emphasis on those that have been identified and the various mechanisms that they reveal for the phenomenon. Pair defects described include interstitial-iron-substitutional-group-III-acceptors and ones formed by interstitial... (Read more)
- 9. J. Appl. Phys. 67, R1 (1990) , “Deep donor levels (DX centers) in III-V semiconductors”, P. M. MooneyDX centers, deep levels associated with donors in III-V semiconductors, have been extensively studied, not only because of their peculiar and interesting properties, but also because an understanding of the physics of these deep levels is necessary in order to determine the usefulness... (Read more)
- 10. Jpn. J. Appl. Phys. 29, L388 (1990) , “Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si”, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoDX centers in GaAs codoped with Ge and Si have been investigated under a hydrostatic pressure, where Ge acts as a DX center, and Si as a shallow donor. It is demonstrated that the number of electrons trapped by the Ge DX center at 22 kbar increases with Si concentration and tends to saturate at a... (Read more)
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