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- 651. Phys. Rev. B 73, 134112 (2006) , “EPR g-tensor of paramagnetic centers in yttria-stabilized zirconia from first-principles calculations”, F. Pietrucci, M. Bernasconi, C. Di Valentin, F. Mauri, and C. J. PickardIn order to assign the defect responsible for the experimental electron paramagnetic resonance (EPR) signal with trigonal symmetry (T center), we have studied the properties of different paramagnetic centers in yttria-stabilized cubic zirconia by computing the EPR g-tensor from density... (Read more)
- 652. Phys. Rev. B 73, 125206 (2006) , “Atomistic simulations on the thermal stability of the antisite pair in 3C- and 4H-SiC”, M. Posselt, F. Gao, W. J. WeberThe thermal stability of the first-neighbor antisite pair configurations in 3C- and 4H-SiC is investigated by atomic-level computer simulations. First, the structure and energetics of these defects are determined in order to check the accuracy of the interatomic potential employed. The results are... (Read more)
- 653. Phys. Rev. B 73, 125205 (2006) , “First-principles study of native defects in anatase TiO2”, Sutassana Na-Phattalung, M. F. Smith, Kwiseon Kim, Mao-Hua Du, Su-Huai Wei, S. B. Zhang, and Sukit LimpijumnongNative point defects in anatase TiO2 are investigated by using first-principles pseudopotential calculations based on density-functional theory (DFT). Antisite defects, namely, Ti-antisite (TiO) and O-antisite (OTi), have high formation energies and are hence... (Read more)
- 654. Phys. Rev. B 73, 125204 (2006) , “Optically detected magnetic resonance studies of point defects in Ga(Al)NAs”, I. P. Vorona, T.Mchedlidze, D. Dagnelund, I. A. Buyanova, W. M. Chen, K. KöhlerAn optically detected magnetic resonance (ODMR) study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates is presented. A number of grown-in defects were observed which act as nonradiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian... (Read more)
- 655. Phys. Rev. B 73, 125203 (2006) , “Origin of brown coloration in diamond”, L. S. Hounsome, R. Jones, P. M. Martineau, D. Fisher, M. J. Shaw, P. R. Briddon, and S. ÖbergMeasurements of the absorption spectra of brown natural type IIa diamond as well as brown nitrogen-doped CVD diamond are reported. These are largely featureless and increase almost monotonically from about 15.5 eV. It is argued that the brown coloration is due to an extended defect and not to... (Read more)
- 656. Phys. Rev. B 73, 121306 (2006) , “Resistively detected NMR in a two-dimensional electron system near mu = 1: Clues to the origin of the dispersive lineshape”, L. A. Tracy, J. P. Eisenstein, L. N. Pfeiffer, and K. W. WestResistively detected nuclear magnetic resonance (NMR) measurements on 2D electron systems near the =1 quantum Hall state are reported. In contrast to recent results of Gervais et al. [Phys. Rev. Lett. 94, 196803 (2005)], a dispersive line shape is found at all radio-frequency powers studied... (Read more)
- 657. Phys. Rev. B 73, 115208 (2006) , “Evidence for a trigonal dimer of antibonding hydrogen in crystalline silicon”, R. N. Pereira and B. Bech NielsenThe infrared absorption spectra recorded on silicon crystals implanted with protons at cryogenic temperatures reveal three lines at 812, 1608, and 1791 cm1, which originate from the excitation of local vibrational modes of a H defect. Measurements carried out on crystals subjected... (Read more)
- 658. Phys. Rev. B 73, 115207 (2006) , “First-principles study of migration mechanisms and diffusion of oxygen in zinc oxide”, Paul Erhart and Karsten AlbeWe have performed density-functional theory calculations in conjunction with the climbing image nudged elastic band method in order to study the self-diffusion of oxygen in zinc oxide. To this end, we have derived the complete set of migration paths for vacancies as well as interstitials in wurtzite... (Read more)
- 659. Phys. Rev. B 73, 115204 (2006) , “Platelets and the 110a0/4 {001} stacking fault in diamond”, J. P. Goss, P. R. Briddon, R. Jones, M. I. HeggieElectron microscopy reveals the presence of {001} platelets in annealed, nitrogen containing diamond. These extended planar defects give rise to a large displacement of the surrounding material, are correlated with luminescence and optical absorption, and are characterized by the B... (Read more)
- 660. Phys. Rev. B 73, 115203 (2006) , “Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica”, S. Agnello and L. NuccioThe effects of isochronal thermal treatments on three -irradiation-induced point defects, named the E, ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO2). ODC(II) is investigated by means of photoluminescence spectroscopy,... (Read more)
- 661. Phys. Rev. B 73, 115202 (2006) , “Annealing of electron-, proton-, and ion-produced vacancies in Si”, S. Dannefaer, V. Avalos, D. Kerr, R. Poirier, V. Shmarovoz, and S. H. ZhangPositron lifetime and Doppler measurements were performed on float-zone-refined and variously doped Czochralski-grown Si. The samples were irradiated by various particles (e, p, Kr) with energies between 2 MeV and 245 MeV. Electron or proton irradiation gave rise to... (Read more)
- 662. Phys. Rev. B 73, 113202 (2006) , “Demonstration of the effect of uniaxial stress on the electronic structure of bond-centered muonium in Si”, K. H. Chow, B. Hitti, and J. S. LordWe demonstrate that compressive uniaxial stress modifies the electronic structure of bond-centered muonium (MuBC0" align="middle">) in Si. The stress was applied along the 100 direction of the sample and results in a significant change in the hyperfine parameters of... (Read more)
- 663. Phys. Rev. B 73, 085204 (2006) , “Theory of boron aggregates in diamond: First-principles calculations”, J. P. Goss and P. R. BriddonIt is well known that nitrogen forms aggregates in diamond. However, little is known regarding aggregation of boron, an impurity that can be incorporated in very high concentrations. In this paper we present the results of first-principles calculations regarding the structure and properties of... (Read more)
- 664. Phys. Rev. B 73, 081203(R) (2006) , “Muonium in InSb: Shallow acceptor versus deep trap or recombination center”, V. G. Storchak, D. G. Eshchenko, J. H. Brewer, S. P. Cottrell, and R. L. LichtiThe bound state of a muonium atom has been detected in both n-type and p-type InSb using a high-field µSR technique. The hyperfine constant obtained for this isotropic center (AT=2464±1 MHz), roughly half that of a Mu atom in vacuum, is... (Read more)
- 665. Phys. Rev. B 73, 075201 (2006) , “Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC”, N. T. Son, A. Henry, J. Isoya, M. Katagiri, T. Umeda, A. Gali, E. JanzénContinuous-wave (cw) electron paramagnetic resonance (EPR) at both X-band and W-band frequencies, pulsed-EPR, and pulsed electron nuclear double resonance (ENDOR) were used to study phosphorus shallow donors in 3C-, 4H-, and 6H-SiC doped with phosphorus (P) during... (Read more)
- 666. Phys. Rev. B 73, 073302 (2006) , “Origin of Pb1 center at SiO2/Si(100) interface: First-principles calculations”, K. Kato, T. Yamasaki, T. UdaBased on first-principles calculations, we studied the generation behavior of Pb centers at SiO2/Si interfaces, especially for Pb1 centers, under oxidation of Si(100) surfaces. Pb1 centers were found to be formed... (Read more)
- 667. Phys. Rev. B 73, 045208 (2006) , “Characterization of Eδ and triplet point defects in oxygen-deficient amorphous silicon dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of γ-ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (Eγ, Eδ, and triplet) and one... (Read more)
- 668. Phys. Rev. B 73, 033204 (2006) , “Electrical characterization of metastable carbon clusters in SiC: A theoretical study”, A. Gali, N. T. Son, E. JanznFirst-principles calculations carried out in 3C- and 4H-SiC show that small metastable carbon clusters can be created in irradiated SiC. The metastable carbon clusters possess occupation levels in the p-type as well as in the n-type 4H-SiC. Depending on the... (Read more)
- 669. Phys. Rev. B 73, 024117 (2006) , “Defect properties and p-type doping efficiency in phosphorus-doped ZnO”, Woo-Jin Lee, Joongoo Kang, and K. J. ChangBased on first-principles pseudopotential calculations, we investigated the electronic structure of various P-related defects in ZnO and the p-type doping efficiency for two forms of P dopant sources such as P2O5 and Zn3P2. As compared to N dopants,... (Read more)
- 670. Phys. Rev. B 73, 014111 (2006) , “Structure of SiO2/4H-SiC interface probed by positron annihilation spectroscopy”, M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Miyashita, R. Suzuki, T. OhdairaThe structure of the SiO2/4H-SiC interface produced by dry oxidation has been studied using positron annihilation spectroscopy using energy-variable slow positron beams. Based on the Doppler broadening shape and wing parameter (S-W) correlation, the interface layer was... (Read more)
- 671. Phys. Rev. Lett. 97, 256603 (2006) , “Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance”, Kazuhiro Marumoto, Shin-ichi Kuroda, Taishi Takenobu,, and Yoshihiro IwasaAn electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to... (Read more)
- 672. Phys. Rev. Lett. 97, 256602 (2006) , “Bistability-Mediated Carrier Recombination at Light-Induced Boron-Oxygen Complexes in Silicon”, Mao-Hua Du, Howard M. Branz, Richard S. Crandall, and S. B. ZhangA first-principles study of the BO2 complex in B-doped Czochralski Si reveals a defect-bistability-mediated carrier recombination mechanism, which contrasts with the standard fixed-level Shockley-Read-Hall model of recombination. An O2 dimer distant from B causes only weak... (Read more)
- 673. Phys. Rev. Lett. 97, 255902 (2006) , “Atomistic Mechanism of Boron Diffusion in Silicon”, Davide De Salvador, Enrico Napolitani, Salvatore Mirabella, Gabriele Bisognin, Giuliana Impellizzeri, Alberto Carnera, and Francesco PrioloB diffuses in crystalline Si by reacting with a Si self-interstitial (I) with a frequency g and so forming a fast migrating BI complex that can migrate for an average length λ. We experimentally demonstrate that both g and λ strongly depend on the free hole... (Read more)
- 674. Phys. Rev. Lett. 97, 227401 (2006) , “Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States”, A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. HallerWe resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine... (Read more)
- 675. Phys. Rev. Lett. 97, 226401 (2006) , “Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)”, Magnus Hedström, Arno Schindlmayr, Günther Schwarz, and Matthias SchefflerWe propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at... (Read more)
- 676. Phys. Rev. Lett. 97, 176404 (2006) , “Stark Tuning of Donor Electron Spins in Silicon”, F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, and S. A. LyonWe report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the... (Read more)
- 677. Phys. Rev. Lett. 97, 166803 (2006) , “Electronic Structure of Defect States in Hydroxylated and Reduced Rutile TiO2(110) Surfaces”, Cristiana Di Valentin, Gianfranco Pacchioni, and Annabella SelloniIt has been experimentally observed that a bridging oxygen vacancy on the rutile TiO2(110) surface introduces localized Ti3+ 3d1 states about 1 eV below the conduction band which are not removed upon dissociation of a water molecule and formation of a pair of... (Read more)
- 678. Phys. Rev. Lett. 97, 166402 (2006) , “Phosphorus Donors in Highly Strained Silicon”, Hans Huebl, Andre R. Stegner, Martin Stutzmann, Martin S. Brandt, Guenther Vogg, Frank Bensch, Eva Rauls, and Uwe GerstmannThe hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si1-xGex substrates with x0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT... (Read more)
- 679. Phys. Rev. Lett. 97, 155901 (2006) , “Proton Diffusion Mechanism in Amorphous SiO2”, Julien Godet and Alfredo PasquarelloWe study proton diffusion in amorphous SiO2 from the atomic scale to the long-range percolative regime. Ab initio molecular dynamics suggest that the dominant atomic process consists in cross-ring interoxygen hopping assisted by network vibrations. A statistical analysis accounting... (Read more)
- 680. Phys. Rev. Lett. 97, 137206 (2006) , “Electron Spin Resonance of Proton-Irradiated Graphite”, Kyu Won Lee and Cheol Eui LeeIn the case of colossal magnetoresistance in the perovskite manganites, "double exchange" mediated by the itinerant spins is believed to play a key role in the ferromagnetism. In contrast, the conventional "Heisenberg" interaction, i.e., direct (unmediated) interaction between... (Read more)
- 681. Phys. Rev. Lett. 97, 135901 (2006) , “Vacancy-Assisted Diffusion in Silicon: A Three-Temperature-Regime Model”, Damien Caliste and Pascal PochetIn this Letter we report kinetic lattice Monte Carlo simulations of vacancy-assisted diffusion in silicon. We show that the observed temperature dependence for vacancy migration energy is explained by the existence of three diffusion regimes for divacancies. This characteristic has been rationalized... (Read more)
- 682. Phys. Rev. Lett. 97, 135502 (2006) , “29Si Hyperfine Structure of the Eα Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report a study by electron paramagnetic resonance on the Eα point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on γ-ray irradiated oxygen-deficient materials and pointed out that the 29Si... (Read more)
- 683. Phys. Rev. Lett. 97, 116101 (2006) , “Oxygen Migration, Agglomeration, and Trapping: Key Factors for the Morphology of the Si-SiO2 Interface”, L. Tsetseris and S. T. PantelidesThe measured activation energies for oxide growth rates at the initial and late stages of oxidation of Si are 2 and 1.2 eV, respectively. These values imply that oxidation can proceed at temperatures much smaller than the 800 °C normally used to obtain devices with exceptionally smooth... (Read more)
- 684. Phys. Rev. Lett. 97, 106802 (2006) , “Role of Pr Segregation in Acceptor-State Formation at ZnO Grain Boundaries”, Yukio Sato, James P. Buban, Teruyasu Mizoguchi, Naoya Shibata, Masatada Yodogawa, Takahisa Yamamoto, and Yuichi IkuharaThe role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to... (Read more)
- 685. Phys. Rev. Lett. 97, 106402 (2006) , “E Center in Silicon Has a Donor Level in the Band Gap”, A. Nylandsted Larsen, A. Mesli, K. Bonde Nielsen, H. Kortegaard Nielsen, L. Dobaczewski, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergIt has been an accepted fact for more than 40 years that the E center in Si (the group-V impurityvacancy pair)one of the most studied defects in semiconductorshas only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction... (Read more)
- 686. Phys. Rev. Lett. 97, 087601 (2006) , “Polarization and Readout of Coupled Single Spins in Diamond”, R. Hanson, F. M. Mendoza, R. J. Epstein, and D. D. AwschalomWe study the coupling of a single nitrogen-vacancy center in diamond to a nearby single nitrogen defect at room temperature. The magnetic dipolar coupling leads to a splitting in the electron spin resonance frequency of the nitrogen-vacancy center, allowing readout of the state of a single nitrogen... (Read more)
- 687. Phys. Rev. Lett. 97, 066602 (2006) , “Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well”, Junya Matsunami, Mitsuaki Ooya, and Tohru OkamotoThe resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the... (Read more)
- 688. Phys. Rev. Lett. 97, 066101 (2006) , “Structure and Interconversion of Oxygen-Vacancy-Related Defects on Amorphous Silica”, Chin-Lung Kuo and Gyeong S. HwangAtomic structure and structural stability of neutral oxygen vacancies on amorphous silica are investigated using combined Monte Carlo and density functional calculations. We find that, unlike their bulk counterparts, the Si-Si dimer configuration of surface oxygen vacancies is likely to be unstable... (Read more)
- 689. Phys. Rev. Lett. 97, 016102 (2006) , “Scaling and Universality of Roughening in Thermal Oxidation of Si(001)”, Hiroo Omi, Hiroyuki Kageshima, and Masashi UematsuBy analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 °C in an Ar atmosphere containing a small fraction of O2. We also show... (Read more)
- 690. Phys. Rev. Lett. 96, 55501 (2006) , “Divacancy in 4H-SiC”, N. T. Son, P. Carlsson, J. ul Hassan, E. Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, H. ItohElectron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground... (Read more)
- 691. Phys. Rev. Lett. 96, 205504 (2006) , “First-Principles Study of the Diffusion of Hydrogen in ZnO”, M. G. Wardle, J. P. Goss, and P. R. BriddonZinc oxide, a wide-gap semiconductor, typically exhibits n-type conductivity even when nominally undoped. The nature of the donor is contentious, but hydrogen is a prime candidate. We present ab initio calculations of the migration barrier for H, yielding a barrier of less than ~0.5 ... (Read more)
- 692. Phys. Rev. Lett. 96, 196402 (2006) , “Nitrogen Vacancies as Major Point Defects in Gallium Nitride”, M. G. Ganchenkova and R. M. NieminenWe present results of ab initio calculations for vacancies and divacancies in GaN. Particular attention is paid to nitrogen vacancies and mixed Ga-N divacancies in negatively charged states, which in n-type GaN are found to be energetically comparable with gallium vacancies. We also... (Read more)
- 693. Phys. Rev. Lett. 96, 17203 (2006) , “Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co”, P. Sati, R. Hayn, R. Kuzian, S. Régnier, S. Schäfer, A. Stepanov, C. Morhain, C. Deparis, M. Laügt, M. Goiran, and Z. GolackiWe report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.0030.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in... (Read more)
- 694. Phys. Rev. Lett. 96, 145501 (2006) , “Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC”, T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. BockstedteThe metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. (Read more)SiC| ENDOR EPR Theory electron-irradiation optical-spectroscopy thermal-meas./anneal-exp.| -1 -2 1.0eV~ 13C 29Si C1h C3v Carbon Csi EI5/6 HEI1 HEI5/6 Nitrogen P6/7 SI5 Silicon Vc antisite bistable/metastable dangling-bond n-type pair(=2) semi-insulating vacancy .inp files: SiC/SI5_C1h SiC/SI5_80K SiC/SI5_100K | last update: Takashi Fukushima
- 695. Phys. Rev. Lett. 96, 035505 (2006) , “Mutual Passivation of Donors and Isovalent Nitrogen in GaAs”, Jingbo Li, Pierre Carrier, Su-Huai Wei, Shu-Shen Li, and Jian-Bai XiaWe study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, SiGa, GeGa, SAs, and SeAs, bind to N in GaAs:N, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such... (Read more)
- 696. Physica B 376-377, 486 (2006) , “Preferential substitution of Fe on physically equivalent Ga sites in GaN”, W. Gehlhoff, D. Azamat, U. Haboeck, A. HoffmannThe EPR spectra of Fe3+ in high-quality thick freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with numerous lines of different intensities provided by three different defects is observed for these nearly stress-free iron-doped samples.... (Read more)
- 697. Physica B 376-377, 358-361 (2006) , “Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC”, J. Isoya, M. Katagiri, T. Umeda, S. Koizumi, H. Kanda, N. T. Son, A. Henry, A. Gali, E. JanzénPhosphorus shallow donors having the symmetry lower than Td are studied by pulsed EPR. In diamond:P and 3C–SiC:P, the symmetry is lowered to D2d and the density of the donor wave function on the phosphorus atom exhibits a predominant p-character. In 4H–SiC:P with the site symmetry of... (Read more)
- 698. Physica B 376-377, 177 (2006) , Elsevier , “Micro-characterisation of Si wafers by high-pressure thermopower technique”, S.V. Ovsyannikov, V.V. Shchennikov Jr, N.A. Shaydarova, V. V. Shchennikov, A. Misiuk, D. Yang, I.V. Antonova, S.N. ShaminIn the present work a set of Czochralski-grown silicon wafers (Cz–Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region (0-20GPa). The shifts were observed in pressure of semiconductor–metal phase transition Pt determined from the S(P) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen cO (which is always present in Cz–Si) on the other hand. The dependence exhibited a maximum of Pt near cO~9×1017cm-3. (Read more)
- 699. Physica B 373, 182-193 (2006) , “Electron–nuclear double resonance and dynamic nuclear polarization in GaAs in the regime of the quantum Hall effect”, E. Olshanetsky, J.D. Caldwell, A.E. Kovalev, C.R. Bowers, J.A. Simmons , J.L. RenoElectron spin resonance (ESR) and electron-nuclear double resonance experiments were performed in the 2D electron systems of GaAs/AlxGa1−xAs quantum well and heterojunction samples in the vicinity of the unity filling factor in the regime of the quantum Hall effect. As is well known, the ESR... (Read more)
- 700. Superlatt. Microstruct. 39, 247-256 (2006) , “Optical and morphological features of bulk and homoepitaxial ZnO”, R. Yakimova, G.R. Yazdi, N.T. Son, I. Ivanov, M. Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov , B. SvenssonZnO substrate crystals from two different sources, and epitaxial layers have been studied by SEM, AFM, photoluminescence and EPR. Although fabricated by the same growth principle, i.e. the hydrothermal technique, the substrates differ in terms of purity and structural quality. In the PL spectra of... (Read more)
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