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- 126. J. Appl. Phys. 101, 086106 (2007) , “Electron irradiation induced deep centers in hydrothermally grown ZnO”, Z.-Q. Fang, B. Claflin, D. C. Look, and G. C. FarlowAn n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ~108 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation... (Read more)
- 127. J. Appl. Phys. 101, 083529 (2007) , “Low temperature diffusion of impurities in hydrogen implanted silicon”, S. Personnic, K. K. Bourdelle, F. Letertre, A. Tauzin, F. Laugier, R. Fortunier, and H. KlockerThe effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen, carbon, and fluorine during low temperature, 450 °C, isothermal anneals. Their fast migration... (Read more)
- 128. J. Appl. Phys. 101, 073706 (2007) , “Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy”, M. Asghar, I. Hussain, H. S. Noor, F. Iqbal, Q. Wahab, and A. S. BhattiCharacterization of dominant electron trap in as-grown SiC epilayers has been carried out using deep level transient spectroscopy. Two electron traps E1 and Z1 at Ec−0.21 and Ec−0.61 are observed, respectively;... (Read more)
- 129. J. Appl. Phys. 101, 054511 (2007) , “Annealing of 60Co gamma radiation-induced damage in n-GaN Schottky barrier diodes”, G. A. Umana-Membreno, J. M. Dell, G. Parish, B. D. Nener, L. Faraone, S. Keller, and U. K. MishraThe effect of isochronal thermal annealing on Ni/n-GaN Schottky barrier diodes exposed to a total accumulated gamma-ray dose of 21 Mrad(Si) has been investigated using capacitance-voltage (C-V) and current-voltage (I-V) measurements, while capacitance deep-level... (Read more)
- 130. J. Appl. Phys. 101, 053716 (2007) , “Compensation mechanism in high purity semi-insulating 4H-SiC”, W. C. Mitchel, William D. Mitchell, H. E. Smith, G. Landis, S. R. Smith, and E. R. GlaserA study of deep levels in high purity semi-insulating 4H-SiC has been made using temperature dependent Hall effect (TDH), thermal and optical admittance spectroscopies, and secondary ion mass spectrometry (SIMS). Thermal activation energies from TDH varied from a low of 0.55 eV to a high of... (Read more)
- 131. J. Appl. Phys. 101, 053709 (2007) , “Impacts of growth parameters on deep levels in n-type 4H-SiC”, Katsunori Danno, Tsutomu Hori, and Tsunenobu KimotoDeep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy. The Z1/2 and EH6/7 centers are dominant in epilayers grown with low C/Si ratios during chemical vapor deposition. By increasing the C/Si ratio, the... (Read more)
- 132. J. Appl. Phys. 101, 046107 (2007) , “Dopant dependence on passivation and reactivation of carrier after hydrogenation”, N. Fukata, S. Sato, H. Morihiro, K. Murakami, K. Ishioka, M. Kitajima, and S. HishitaThe formation of hydrogen (H)-related complexes and H effects on boron (B) and phosphorus (P) dopants was investigated in B- or P-doped silicon (Si) crystal treated with high concentration of H. The reactivation process of dopant carriers by annealing after hydrogenation was significantly different... (Read more)
- 133. J. Appl. Phys. 101, 024324 (2007) , “Electron paramagnetic resonance in transition metal-doped ZnO nanowires”, A. O. Ankiewicz, M. C. Carmo, N. A. Sobolev, W. Gehlhoff, E. M. Kaidashev, A. Rahm, M. Lorenz, and M. GrundmannThe wide-band-gap zinc oxide-based diluted magnetic semiconductors currently attract considerable attention due to their possible use in spintronic devices. In this work, we studied ZnO nanowire samples synthesized on 10×10 mm2 a-plane sapphire substrates by high-pressure... (Read more)
- 134. J. Appl. Phys. 101, 024101 (2007) , “Defect states in the high-dielectric-constant gate oxide HfSiO4”, K. Xiong, Y. Du, K. Tse, and J. RobertsonHafnium silicate has a high dielectric constant and is a leading candidate to act as a gate dielectric. The defect energy levels have been calculated. The oxygen vacancy is found to give rise to Si-like levels which lie within the band gap of Si. The vacancy states are very localized and are... (Read more)
- 135. J. Appl. Phys. 101, 023516 (2007) , “Effect of screw dislocation density on optical properties in n-type wurtzite GaN”, Jeong Ho You and H. T. JohnsonThe effect of open-core screw dislocations on photoluminescence in n-doped wurtzite GaN epilayer is studied computationally and compared with experimental data. A k•p Hamiltonian calculation domain is set up to contain a dipole of open-core screw dislocations, and its size... (Read more)
- 136. J. Appl. Phys. 101, 023515 (2007) , “He induced nanovoids for point-defect engineering in B-implanted crystalline Si”, E. Bruno, S. Mirabella, F. Priolo, E. Napolitani, C. Bongiorno, and V. RaineriIn this paper we present a systematic study on the formation of He ion implantation induced nanovoids in Si and how they influence the self-interstitial (Is) supersaturation, thus affecting the diffusion and electrical activation of implanted boron in crystalline silicon. We implanted He ions... (Read more)
- 137. J. Appl. Phys. 101, 013902 (2007) , “An electron paramagnetic resonance study of n-type Zn1−xMnxO: A diluted magnetic semiconductor”, A. Ben Mahmoud, H. J. von Bardeleben, J. L. Cantin, E. Chikoidze, and A. MaugerWe present the results of an electron paramagnetic resonance study of homogeneous single phase Zn1−xMnxO thin films with Mn concentrations varying between x=0.07 and x=0.34. Our results show antiferromagnetic (AF) coupling in the entire... (Read more)
- 138. J. Appl. Phys. 101, 013707 (2007) , “Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC”, W. C. Mitchel, W. D. Mitchell, G. Landis, H. E. Smith, Wonwoo Lee, and M. E. ZvanutThe electronic levels of vanadium in semi-insulating 4H- and 6H-SiC have been reinvestigated using temperature dependent Hall effect and resistivity measurements at temperatures up to 1000 K in conjunction with electron paramagnetic resonance (EPR) and optical absorption measurements... (Read more)
- 139. J. Appl. Phys. 101, 013703 (2007) , “Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si”, B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers, and L. ColomboElectron spin resonance measurements on 4 and 40 nm thick (HfO2)0.6(SiO2)0.4 and (HfO2)0.4(SiO2)0.6 high-κ films on (100)Si wafers detected Pb0 and Pb1... (Read more)
- 140. Jpn. J. Appl. Phys. 46, L57 (2007) , “Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching”, Hisashi Shima, Fumiyoshi Takano, Yukio Tamai, Hiro Akinaga, and Isao H. Inoue.The resistance switching in Pt/Co–O/Pt trilayers has been successfully demonstrated. The trilayers were prepared by radio-frequency magnetron sputtering. The partial pressure of oxygen during sputtering and the post thermal process for the trilayer are crucial to realize the reproducible resistance switching. By adjusting oxygen partial pressure as well as post-annealing temperature and time, large resistance switching was steadily obtainable in both the as deposited and post-annealed Pt/Co–O/Pt trilayers. The resistance switching ratio exceeds 103, being sufficiently large for the resistance random access memory (RRAM). Co–O is regarded as a very promising oxide for RRAM having compatibilities with the conventional complementary metal–oxide semiconductor process. (Read more)
- 141. Phys. Rev. B 76, 233204 (2007) , “Room-temperature annealing of vacancy-type defect in high-purity n-type Si”, J. H. Bleka, E. V. Monakhov, B. G. Svensson, and B. S. AvsetElectron-irradiated p+-n−-n+ diodes produced from low-doped high-purity Si wafers were found, by deep-level transient spectroscopy (DLTS), to have a prominent defect, labeled E4, with an energy level 0.37 eV below the... (Read more)
- 142. Phys. Rev. B 76, 233202 (2007) , “Evidence of a second acceptor state of the E center in Si1−xGex”, K. Kuitunen, F. Tuomisto, and J. SlotteWe have found evidence of a second acceptor state of the E center in Si1−xGex by using positron annihilation spectroscopy. To achieve this, we studied proton irradiated n-type Si1−xGex with a Ge content... (Read more)
- 143. Phys. Rev. B 76, 214114 (2007) , “Biradical states of oxygen-vacancy defects in α-quartz”, R. I. Mashkovtsev, D. F. Howarth, and J. A. WeilSeveral radiation defects with effective electron spin S=1 have been observed in synthetic α-quartz, using room-temperature (RT) electron paramagnetic resonance (EPR) spectroscopy. It turns out that these defects had better be considered as biradicals, i.e., pairs of S=1/2... (Read more)
- 144. Phys. Rev. B 76, 195203 (2007) , “Zn interstitial related donors in ammonia-treated ZnO powders”, J. Sann, J. Stehr, A. Hofstaetter, D. M. Hofmann, A. Neumann, M. Lerch, U. Haboeck, A. Hoffmann, and C. ThomsenZnO powder heat treated in NH3 atmosphere was investigated by electron paramagnetic resonance, photoluminescence, and Raman spectroscopy. We find that the treatment creates Zn interstitials (Zni) and complexes of Zn interstitials and nitrogen atoms substituting oxygen... (Read more)
- 145. Phys. Rev. B 76, 165209 (2007) , “Theoretical study of small silicon clusters in 4H-SiC”, T. Hornos, N. T. Son, E. Janzén, and A. GaliWe have studied the small clusters of silicon and carbon interstitials by ab initio supercell calculations in 4H-SiC. We found that silicon interstitials can form stable and electrically active complexes with each other or with a carbon interstitial. Local vibration modes and... (Read more)
- 146. Phys. Rev. B 76, 165207 (2007) , “Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN”, F. Tuomisto, V. Ranki, D. C. Look, and G. C. FarlowWe have used positron annihilation spectroscopy to study the introduction and recovery of point defects introduced by 0.45 and 2 MeV electron irradiation at room temperature in n-type GaN. Isochronal annealings were performed up to 1220 K. We observe vacancy defects with specific lifetime... (Read more)
- 147. Phys. Rev. B 76, 165202 (2007) , “Native point defects in ZnO”, Anderson Janotti and Chris G. Van de WalleWe have performed a comprehensive first-principles investigation of native point defects in ZnO based on density functional theory within the local density approximation (LDA) as well as the LDA+U approach for overcoming the band-gap problem. Oxygen deficiency, manifested in the form of... (Read more)
- 148. Phys. Rev. B 76, 155203 (2007) , “Ab initio study of lithium and sodium in diamond”, E. B. Lombardi, Alison Mainwood, and K. OsuchInterstitial lithium and sodium have been suggested as alternatives to phosphorus to achieve shallow n-type doping of diamond. Experimental results have, however, been contradictory. We report ab initio density functional theory modeling of lithium and sodium in diamond and show that... (Read more)
- 149. Phys. Rev. B 76, 125205 (2007) , “Formation of electron traps in amorphous silica”, Matteo Farnesi Camellone, Joachim C. Reiner, Urs Sennhauser, and Louis SchlapbachThe capture of an electron by a silicon atom in a defect-free bulk of amorphous silica (a-SiO2) has been investigated. Ab initio constrained dynamics has been applied to evaluate the energy barrier. The computed energy barrier involved in the mechanism was found to be 0.23 ... (Read more)
- 150. Phys. Rev. B 76, 125204 (2007) , “Interstitial Fe in Si and its interactions with hydrogen and shallow dopants”, M. Sanati, N. Gonzalez Szwacki, and S. K. EstreicherThe properties of interstitial iron in crystalline silicon and its interactions with hydrogen, shallow acceptors (B, Al, Ga, In, and Tl), and shallow donors (P and As) are calculated from first-principles in periodic supercells. The interactions between the {Fe,B} pair and interstitial hydrogen are... (Read more)
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