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- 901. Solid State Commun. 96, 397 (1995) , “Oxidation temperature dependent restructuring of the Pb defect at the (1 1 1) Si/SiO2 interface”, A. Stesmans.Previous electron spin resonance work has unveiled distinct variations in g|| of the Pb interface defects (oSi=Si3) in (1 1 1) Si/SiO2 structures upon upwards crossing of the oxidation temperature range Tox = 750–850°C. These are a drop in g|| of δg|| 0.00008 and a collapse... (Read more)
- 902. Semicond. Sci. Technol. 10, 1645 (1995) , “Deep levels in silicon after iron silicide formation”, U Erlesand and M OstlingDeep level transient spectroscopy (DLTS) characterization was performed after forming iron silicides on silicon by a solid state reaction at 450-850 degrees C. No deep levels were discovered in n-type silicon when the reaction took place on cleaned previously unprocessed wafers. When the silicide... (Read more)
- 903. Semicond. Sci. Technol. 10, 977 (1995) , “EPR and ENDOR Observation of Orthorhombic Au-Li and Pt-Li Pairs in Silicon: on the Problem of the Observation of Isolated AuSi0 with Magnetic Resonance”, S. Greulich-Weber, P. Alteheld, J. Reinke, H. Weihrich, H. Overhof, J. M. Spaeth.We report the observation of orthorhombic Au-Li and Pt-Li pairs in Si using EPR and ENDOR techniques and also MCDA spectroscopy. The EPR spectra alone could be mistaken as being due to orthorhombic isolated point defects and ENDOR is required to detect the Li partner of the pair. Comparison of the... (Read more)
- 904. Physica B 205, 87-90 (1995) , “Magnetism of interacting donors in zinc-blende GaN”, M. FanciulliThe temperature dependence of the paramagnetic susceptibility of donor centers in zinc-blende GaN thin films observed by monitoring the integral intensity of the electron paramagnetic resonance (EPR) absorption has been analyzed using the donor-molecule model. The theoretical predictions are... (Read more)
- 905. Physica B 211, 23-29 (1995) , “Solid state experiments in megagauss fields”, N. Miura, H. Nojiri, Y. Shimamoto and Y. ImanakaThis paper presents a brief review on recent experiments of solid state physics in very high magnetic fields up to 550 T produced by electromagnetic flux compression and the single-turn coil technique, focusing on magneto-optical spectroscopy in semiconductors, low-dimensional magnetic systems and... (Read more)
- 906. Physica B 215, 404 (1995) , “Microwave Conductivity and Spin Resonance of Si-nK Centers at Dislocation Dipoles in Silicon”, A. A. Konchits, B. D. Shanina.Non-resonance microwave absorption (NRMA) due to microwave conductivity (MC) of Czochralski-grown silicon crystal has been studied. The temperature dependence of the MC was measured in the temperature range from 1.7 to 40 K in darkness as well as under the interband light. Exponential growth of the... (Read more)
- 907. phys. stat. sol. (b) 189, K1 (1995) , “Charge States of Interstitial Defects in Implanted Silicon and Their Annealing Temperatures”, M. Jadan, N. I. Berezhnov, A. R. Chelyadinskii.In radiation physics of silicon a "vacancy" period has persisted for quite a long time. From a number of investigations it has been inferred that a divacancy is the main defect, stable at room temperature in silicon irradiated by fast neutrons and irons[1 to 3]. The concentrations of stable... (Read more)
- 908. Phys. Rev. Lett. 74, 2030 (1995) , “Role of Hydrogen in the Formation and Structure of the Si-NL10 Thermal Donor”, Yu. V. Martynov, T. Gregorkiewecz, C. A. J. Ammerlaan.Microscopic evidence of a prominent role of hydrogen in the formation and structure of the Si- NL10 thermal donor is presented. Hyperfine interactions with the 1H nucleus have been detected and analyzed by means of electron-nuclear double resonance (ENDOR) and field-scanned ENDOR. Based... (Read more)
- 909. Phys. Rev. B 51, 11117 (1995) , “Optical cross section for the EL2?EL2* metastable transformation”, N. Radić and B. Å antićA simple and accurate method for the determination of the σ* optical cross section governing the EL2→EL2* transformation kinetics in GaAs is proposed. Previously reported σ* values are critically examined and corrected properly. The obtained absolute values of... (Read more)
- 910. Phys. Rev. B 51, 16721 (1995) , “Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and Deep-Level Transient Spectroscopy”, V. Kveder, T. Sekiguchi, K. Sumino.Dislocation loops consisting of long and straight segments of 60° and screw parts were introduced in p-type Si by deformation under a high stress at a relatively low temperature. Electronic states associated with such dislocations were investigated by means of electric-dipole spin resonance, with... (Read more)
- 911. Phys. Rev. B 51, 16741 (1995) , “Optical detection of magnetic resonance of nitrogen and nickel in high-pressure synthetic diamond”, M. H. Nazare, P. W. Mason, G. D. Watkins, H. KandaDiamonds grown by the temperature-gradient method using a nickel catalyst exhibit a luminescence spectrum that is dominated by a broad band with sharp lines around 2.56 eV. We report optical detection of magnetic resonance of substitutional N0 and substitutional Ni- in this... (Read more)
- 912. Phys. Rev. B 51, 16746 (1995) , “Electron-Paramagnetic-Resonance Identification of Hydrogen-Passivated Sulfur Centers in Silicon”, I. S. Zevenbergen, T. Gregorkiewicz, and C. A. J. AmmerlaanTwo centers are detected in hydrogenated sulfur-doped silicon by means of electron paramagnetic resonance. Both defects, labeled for further reference Si-NL54 and Si-NL55, are very similar and have trigonal symmetry; to better resolve the spectra, the field-scanned electron nuclear double resonance... (Read more)
- 913. Phys. Rev. B 51, 1928 (1995) , “Carbon and silicon vacancies in electron-irradiated 6H-SiC”, S. Dannefaer, D. Craigen, D. KerrPositron-lifetime and Doppler-broadening spectroscopies were used to investigate vacancies formed by 2.2- and 10-MeV electrons. Carbon vacancies yield a positron lifetime of 160 ps, only 15 ps longer than the bulk lifetime, and the Doppler-broadening S parameter is very close to that for the bulk.... (Read more)
- 914. Phys. Rev. B 51, 9612 (1995) , “Microscopic Structure and Multiple Charge States of a PtH2 Complex in Si”, S. J. Uftring, M. Stavola, P. M. Williams, G. D. Watkins.The structure and electrical properties of a PtH2 complex in Si have been studied by vibrational spectroscopy and electron paramagnetic resonance (EPR). The PtH2 complex has been found to introduce two levels in the Si band gap. One level was identified previously and lies near... (Read more)
- 915. Phys. Rev. B 52, 1144 (1995) , “Electron Paramagnetic Resonance Versus Spin-Dependent Recombination: Excited Triplet States of Structural Defects in Irradiated Silicon”, L. S. Vlasenko, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan.Upon illumination some structural defects in irradiated silicon can be excited into the metastable triplet S=1 states. These triplet states can be involved in the excess-carriers recombination process. This paper provides a theoretical treatment of spin-dependent recombination (SDR) via an excited... (Read more)
- 916. Phys. Rev. B 52, 12657 (1995) , “Magnetic-resonance measurements on the 5A2 excited state of the neutral vacancy in diamond”, J. A. van Wyk, O. D. Tucker, M. E. Newton, J. M. Baker, G. S. Woods, P. SpearThe ground state of the neutral vacancy in diamond is diamagnetic and therefore has not been studied by electron paramagnetic resonance (EPR). We report the observation of EPR from the 5A2 excited state of the neutral vacancy by EPR when illuminating an electron-irradiated... (Read more)
- 917. Phys. Rev. B 52, 16575 (1995) , “Vacancy Model for Substitutional Ni-, Pd-, Pt-, and Au0 in Silicon”, G. D. Watkins, P. M. Williams.The vacancy model for the electronic structure in silicon of substitutional transition elements near the end of the 3d, 4d, and 5d series is described and a simplified theoretical treatment for their paramagnetic properties is presented. It is concluded that the complete set of such impurities for... (Read more)
- 918. Phys. Rev. B 52, 4998 (1995) , “Aggregate Defects of Gold and Platinum with Lithium in Silicon: I. Magnetic Resonance Investigations”, P. Alteheld, S. Greulich-Weber, J. –M. Spaeth, H. Weihrich, H. Overhof, M. Höhne.Trigonal and orthorhombic Au (Pt) defects in Si additionally doped with Li and P, previously investigated with electron paramagnetic resonance (EPR), are shown to be aggregate defects involving substitutional Au (Pt) and interstitial Li. The small Li hyperfine interactions, not resolved in EPR,... (Read more)
- 919. Phys. Rev. B 52, 5007 (1995) , “Aggregate Defects of Gold and Platinum with Lithium in Silicon: II. Electronic-Structure Calculations”, H. Weihrich, H. Overhof, P. Alteheld, S. Greulich-Weber, J. –M. Spaeth.We present ab initio total energy calculations for aggregate defects of the noble metals Pt or Au with Li. The calculations are performed in the local spin density approximation to the density-functional theory using the linear-muffin-tin-orbital method in the atomic spheres approximation. We... (Read more)
- 920. Jpn. J. Appl. Phys. 34, 3418 (1995) , “Hydrogen-like Ultrashallow Thermal Donors in Silicon Crystals”, A. Hara.I investigated the electrical properties of annealed carbon- and nitrogen-rich Czochralski-grown silicon crystals using optical absorption and electron spin resonance, and I discovered the formation of a new kind of hydrogen-like donors,... (Read more)
- 921. Jpn. J. Appl. Phys. 34, 5483-5488 (1995) , “Effects of Grown-in Hydrogen on Lifetime of Czochralski Silicon Crystals ”, Akito HaraI studied the effects of grown-in hydrogen on the lifetime of Czochralski-grown silicon crystals. It was found that grown-in hydrogen degraded the electrical properties of Czochralski-grown silicon crystals by enhancing the formation of recombination centers, which had a high thermal stability... (Read more)
- 922. J. Appl. Phys. 77, 1546 (1995) , “Electrical Detection of Electron Paramagnetic Resonance: New Possibilities for the Study of Point Defects”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.An investigation of the possibilities to measure electron paramagnetic resonance (EPR) with electrical detection (EDEPR) by measuring the microwave or radio frequency-induced change of the photoconductivity of various bulk Si samples containing shallow and deep level defects is presented. It was... (Read more)
- 923. J. Appl. Phys. 77, 6205 (1995) , “Dissociation Kinetics of Hydrogen-Passivated (100) Si/SiO2 Interface Defects” J. H. Stathis.”, J. H. StathisThe activation energy for thermal dissociation of hydrogen from silicon dangling-bond defects (Pb centers) has been measured using both (111)- and (100)-oriented samples. The behavior of each of the three Pb varieties [P111b"... (Read more)
- 924. J. Appl. Phys. 77, 837 (1995) , “Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si”, Hisayoshi Itoh, Masahito Yoshikawa, Isamu Nashiyama, Hajime Okumura, Shunji Misawa, Sadafumi YoshidaPhotoluminescence (PL) has been used to study defects introduced by 1-MeV-electron irradiation in cubic silicon carbide (3C-SiC) films epitaxially grown on Si substrates by means of chemical vapor deposition. A dominant PL line of 1.913 eV observed in 3C-SiC irradiated with electrons was found to... (Read more)
- 925. J. Appl. Phys. 78, 2411 (1995) , “Native defects in low-temperature GaAs and the effect of hydrogenation”, R. E. Pritchard, S. A. McQuaid, L. Hart, R. C. Newman, J. Mäkinen, H. J. von Bardeleben, M. MissousA range of experimental techniques has been used to measure point defect concentrations in GaAs layers grown at low temperatures (250 °C) by molecular-beam epitaxy (LT-GaAs). The effects of doping on these concentrations has been investigated by studying samples containing shallow acceptors (Be)... (Read more)
- 926. J. Appl. Phys. 78, 3077 (1995) , “Generation and Dissociation of Complexes of Iron and Phosphorus Atoms in Silicon”, Hideki Takahashi, Masashi Suezawa, and Koji SuminoTo examine the possibility of generating complexes of iron and phosphorus atoms in silicon, neutral interstitial iron in phosphorus doped silicon crystals with various concentrations were measured with the electron spin resonance (ESR) method after cooling from high temperature at various cooling... (Read more)
- 927. J. Appl. Phys. 78, 3874 (1995) , “The erbium-impurity interaction and its effects on the 1.54 µm luminescence of Er3 + in crystalline silicon”, F. Priolo, G. Franzò, S. Coffa, A. Polman, S. Libertino, R. Barklie, D. Carey.We have studied the effect of erbium-impurity interactions on the 1.54 µm luminescence of Er3 + in crystalline Si. Float-zone and Czochralski-grown (100) oriented Si wafers were implanted with Er at a total dose of ~1×1015/cm2. Some samples were also... (Read more)
- 928. J. Appl. Phys. 78, 7059 (1995) , “Characterization of heavily B-doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance”, P. Gonon, E. Gheeraert, A. Deneuville, F. Fontaine, L. Abello, G. LucazeauHeavily B-doped polycrystalline diamond films ([B]~" align="bottom">1019 cm3) are studied by Raman spectroscopy and electron spin resonance. The formation of an impurity band is accompanied by a Fano-type interference for the one-phonon scattering. Bands at 1200 and 500... (Read more)
- 929. Diamond Relat. Mater. 4, 177 (1995) , “Photoinduced absorption lines related to nickel impurity in annealed synthetic diamonds”, A. P. Yelisseyev and V. A. NadolinnyThe absorption lines at 539.9, 546.6 and 552.9 nm induced by visible or UV light illumination in synthetic diamonds annealed at T 2000 K and 5.5 GPa have been studied. The lines are associated with two different nitrogen-nickel defects, while the photoinduction effect is a result of internal... (Read more)
- 930. Diamond Relat. Mater. 4, 508 (1995) , “Effective correlation energies for defects in a-C:H from a comparison of photelectron yield and electron spin resonance experiments”, J. Ristein, J. Schäfer and L. LeyAmorphous hydrogenated carbon films (a-C:H) were deposited by r.f. plasma CVD from methane, varying the self bias potential of the substrate electrode by means of the r.f. power coupled into the discharge. Films were characterized by IR and optical spectroscopy, confirming a transition from... (Read more)
- 931. Diamond Relat. Mater. 4, 877 (1995) , “Properties of diffused diamond films with n-type conductivity”, Galina Popovici, M. A. Prelas, T. Sung, S. Khasawinah, A. A. Melnikov, V. S. Varichenko, A. M. Zaitsev, A. V. Denisenko and W. R. FahrnerHigh quality, freestanding "white" CVD diamond films, 230 μm thick, polished on both sides and with resistivity 1014Ω cm were used for diffusion of impurities to obtain n-type conductivity. Diffusion of lithium, oxygen and chlorine was performed under a bias. Auger analysis was... (Read more)
- 932. Appl. Phys. Lett. 66, 1364 (1995) , “Semi-insulating 6H–SiC grown by physical vapor transport”, H. McD. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel, M. RothSemi-insulating 6HSiC crystals have been achieved by using controlled doping with deep-level vanadium impurities. High resistivity undoped and semi-insulating vanadium-doped single-crystals with diameters up to 50 mm were grown by physical vapor transport using an induction-heated, cold-wall... (Read more)
- 933. Appl. Phys. Lett. 66, 1521 (1995) , “Temperature dependent electrically detected magnetic resonance studies on silicon pn diodes”, P. Christmann, W. Stadler, and B. K. MeyerWe report on electrically detected magnetic resonance (EDMR) studies in silicon pn diodes in the temperature range from 30 to 300 K. In the range from 150 to 300 K the resonance effect is, as usually observed, much larger than expected by spin polarization. From 150 K down to 30 K the spin... (Read more)
- 934. Appl. Phys. Lett. 67, 1280 (1995) , “Impact of Pb doping on the optical and electronic properties of ZnO powders”, K. Vanheusden, W. L. Warren, J. A. Voigt, C. H. Seager, and D. R. TallantElectron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic powders. We observe a decrease in the 2.26 eV emission peak and a concomitant smearing of the band edges, narrowing the effective gap of the... (Read more)
- 935. Appl. Phys. Lett. 67, 2179-2181 (1995) , “Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2”, J F. Conley, Jr., P. M. Lenahan, A. J. Lelis, T. R. OldhamWe provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can ``switch'' charge state in response to changes in the voltage applied to the gate of a... (Read more)
- 936. Thin Solid Films 274, 50 (1996) , “Structural characterization of CVD diamond films using the ESR method”, Yoshiyuki Show, Mitsuo Iwase and Tomio IzumiThe early deposition stages of diamond films have been studied in detail as a function of growth time, using electron spin resonance methods. The defect center in the non-diamond phase carbon region (g = 2.003, ΔHpp = 8–14 Oe was observed from a sample deposited for 10 min. The defect... (Read more)
- 937. Thin Solid Films 281-282, 275 (1996) , “Formation of paramagnetic defects in CVD diamond films (ESR study)”, Y. Show, Y. Nakamura, T. Izumi, M. Deguchi, M. Kitabatake, T. Hirao, Y. Mori, A. Hatta, T. Ito and A. HirakiParamagnetic defects in CVD (Chemical Vapor Deposition) diamond films were studied using the Electron Spin Resonance (ESR) method. Furthermore, the correlation between defects and electrical resistance of conductive layers on CVD the diamond surface were investigated using ESR and van der Pauw... (Read more)
- 938. Surf. Sci. 352-354, 793 (1996) , “Pb1 defect study and chemical characterization of the Si(001)---SiO2 interface in oxidized porous silicon”, J. L. Cantin, M. Schoisswohl, H. J. von Bardeleben, F. Rochet, G. Dufour.In comparison with oxidized bulk crystals, we show that the morphology of oxidized porous silicon can offer a unique opportunity of measuring suboxide distribution by conventional XPS and to characterize thoroughly interfacial defects by EPR. (Read more)
- 939. Surf. Sci. 361-362, 55-58 (1996) , “Electron spin resonance in AlGaAs/GaAs in the regime of fractional filling”, R. Meisels, I. Kulac, G. Sundaram, F. Kuchar, B. D. McCombe, G. Weimann , W. SchlappWe have studied the electron spin resonance (ESR) at millimeterwave frequencies in high mobility AlGaAs/GaAs samples for the first time at filling factors v < 1 outside the v = 1 resistance minimum. The magnetic field dependence of the ESR measured at T = 1.6 K agrees with the calculations made... (Read more)
- 940. Solid State Commun. 97, 255 (1996) , “Comparative Analysis of the H2 Passivation of Interface Defects at the (100)Si/SiO2 Interface Using Electron Spin Resonance”, A. Stesmans.The passivation with molecular hydrogen in the range 213–234°C of the interfacial Pb0 and Pb1 defects in (100)Si/SiO2, thermally grown at low temperature (<750°C), has been analyzed by K-band electron spin resonance. The passivation kinetics are found to be well described by the... (Read more)
- 941. Semiconductors 30, 1055 (1996) , “Detection of Paramagnetic Recombination Centers in Irradiated Silicon p-n Jundtions”, M. M. Afanas’ev, M. P. Vlasenko, V. N. Lomasov, A. V. Militsyn.
- 942. Semiconductors 30, 552 (1996) , “Anomalous excitation in the ESR spectrum of the Fe3+ ion in GaAs”, A. A. Ezhevski?, S. J. H. M. van Gisbergen, C. A. J. Ammerlaan
- 943. Semicond. Sci. Technol. 11, 1696-1703 (1996) , “Metastable oxygen - silicon interstitial complex in crystalline silicon”, Kh. A. Abdullin, B. N. Mukashev, Yu. V. Gorelkinskii.A new metastable complex in monocrystalline silicon irradiated at with protons has been studied. Electron paramagnetic resonance (EPR) Si-AA13 ( symmetry) and Si-AA14 ( symmetry) spectra as well as the known Si-A18 spectrum originate from different molecular configurations of the complex. A... (Read more)
- 944. Radiat. Meas. 26, 131-137 (1996) , “Effect of oxide additives on radiolytic decomposition of zirconium and thorium nitrates”, N. G. Joshi, A. N. Garg, V. Natarajan and M. D. SastryGamma ray-induced decomposition of the binary mixtures of zirconium and thorium nitrates with 2.5, 5 and 10 mol% of V2O5, PbO, ThO2, ZrO2, and MnO2 has been studied at different doses up to 260 kGy. Radiation chemical yield G(NO2−)-values are enhanced by V2O5, PbO, and ThO2 but are decreased... (Read more)
- 945. Prog. Surf. Sci. 51, 263-408 (1996) , “Scanning tunneling microscopy study of fullerenes”, T. Sakurai, X. -D. Wang, Q. K. Xue, Y. Hasegawa, T. Hashizume and H. ShinoharaScanning tunneling microscopy investigations of adsorption and film growth of various fullerenes on semiconductor and metal surfaces are reviewed. The fullerenes being studied are C60, C70, C84, Sc@C82 and Y@C82 and the substrates being used for adsorption are Si (111), Si (100), Ge (111), GaAs... (Read more)
- 946. Proc. SPIE 2780, 133-136 (1996) , “Digital analysis of photo-induced current transients in semi-insulating GaAs and InP”, Pawel Kaminski, Michal Pawlowski, Robert Cwirko, M. Palczewska, Roman KozlowskiDigital PITS technique was applied to study deep-level defects in semi-insulating GaAs and InP. The studies were completed by measurements of ESR spectra on the same wafers.... (Read more)
- 947. phys. stat. sol. (a) 154, 219 (1996) , “Microstructure Evolution and Defect Incorporation in Highly Oriented and Textured CVD Diamond Films”, Y. von Kaenel, J. Stiegler, E. Blank, O. Chauvet, Ch. Hellwig, K. PlamannA series of highly oriented and textured microwave CVD diamond films, where only the deposition time was varied, was deposited on silicon wafers in order to follow the evolution of the microstructure and defect content with film thickness. SEM, XRD, Raman spectroscopy, luminescence measurements, and... (Read more)
- 948. phys. stat. sol. (a) 157, 405 (1996) , “On the Nature of Deep Donors Created at 450 C in Boron-Doped p-Si”, V. M. Babich, N. P. Baran, M. Ya. Valakh, V. L. Kiritsa, G. Yu. Rudko.It is shown that the boron impurity in oxygen-rich p-Si is involved in the formation of electrically active complexes, namely, deep thermal donors, during thermal annealing at T = 450°C. The conclusion is based on experimental results obtained by several techniques such as Hall measurements,... (Read more)
- 949. Phys. Solid State 38, 549 (1996) , “Identification of Intrinsic Interstitial Complexes in Silicon by EPR”, G. O. Tozhibaev, Sh. M. Makhkamov, Yu. V. Gorelkinski?, N. A. Tursunov, M. A. Makhov.Although a large number of experimental papers on defect center states in silicon have been published, there is still not enough information on intrinsic interstitial defects. Of the large number of defects identified by EPR signals in irradiated silicon, only four centers (Si-G25, Si-A5, Si-B3, and Si-P6) are related to intrinsic interstitial complexes of silicon.
- 950. Phys. Rev. Lett. 77, 4600 (1996) , “Electronic Structure of Band-Tail Electrons in a Si:H”, T. Umeda, S. Yamasaki, J. Isoya, A. Matsuda, and K. TanakaElectronic structures of the light-induced electron spin resonance (LESR) centers in undoped a-Si:H have been investigated by means of pulsed ESR techniques. Overlapping LESR signals of g = 2.004 and 2.01 have been experimentally deconvoluted by using the difference in spin-lattice relaxation time... (Read more)Si| EPR| Silicon amorphous band-tail n-type p-type .inp files: Si/band-tail | last update: Takahide Umeda
- 951. Phys. Rev. B 53, 12570 (1996) , “Electron Paramagnetic Resonance of a Au-Au Pair in Heat-Treated Silicon”, P. M. Williams, P. W. Mason, and G. D. WatkinsTwo previously unreported electron paramagnetic resonance centers of C2v symmetry, labeled Si-LAu1 and Si-LAu2, are observed in p-type gold-doped silicon after a heat treatment at 1250 °C. For one of them, Si-LAu2, complex resolved hyperfine structure reveals the presence of two... (Read more)
- 952. Phys. Rev. B 53, 13427 (1996) , “Electronic structure of the N-V center in diamond: Experiments”, A. Lenef, S. W. Brown, D. A. Redman, S. C. Rand, J. Shigley, E. FritschQuantum-beat spectroscopy has been used to observe excited states of the N-V center in diamond. For the 1.945-eV optical transition, direct evidence is presented for the existence of GHz-scale fine structure, together with a much larger 46-cm-1 level splitting in the E state. An... (Read more)
- 953. Phys. Rev. B 53, 13441 (1996) , “Electronic structure of the N-V center in diamond: Theory”, A. Lenef, S. C. RandAb initio calculations have been made of possible excited electronic structure of the N-V center in diamond. Molecular-orbital basis states for a center of C3v symmetry with n=2, 4, or 6 active electrons, which account fully for spin symmetries of the wave functions, were constructed to... (Read more)
- 954. Phys. Rev. B 54, 10508 (1996) , “Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study”, J. Kreissl, W. Ulrici, M. El-Metoui, A.-M. Vasson, A. Vasson, A. GavaixIn order to clarify the nature of the neutral Mn acceptor in GaP, we have carried out optical-absorption and electron-paramagnetic-resonance (EPR) experiments using both conventional and thermally detected EPR on semi-insulating GaP:Mn. In thermal equilibrium at low temperatures, all the manganese... (Read more)
- 955. Phys. Rev. B 54, 10543 (1996) , “Fourier-Transform Photoluminescence Spectroscopy of Excitons Bound to Group-III Acceptors in Silicon: Zeeman Effect”, V. A. Karasyuk, M. L. W. Thewalt, S. An, E. C. Lightowlers, A. S. Kaminskii.Photoluminescence of excitons bound to Al, Ga, In, and Tl acceptors in Si was studied at liquid-He temperatures in magnetic fields up to 14.5 T with ?001?, ?111?, and ?110? orientations with 0.0025-meV spectral resolution. All details of the Zeeman spectra for every field orientation, with up to 30... (Read more)
- 956. Phys. Rev. B 54, 6988 (1996) , “Electron-paramagnetic-resonance measurements on the di-<001>-split interstitial center (R1) in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, O. D. Tucker, T. R. Anthony, W. F. BanholzerElectron-paramagnetic-resonance (EPR) studies in electron-irradiated diamond enriched with 5% 13C have resulted in identification of the di-?001?-split interstitial center. It is the isotopic enrichment and the consequent observation of 13C hyperfine satellites that have... (Read more)
- 957. Phys. Rev. B 54, 7874 (1996) , “Nitrogen-related dopant and defect states in CVD diamond”, E. Rohrer, C. F. O. Graeff, R. Janssen, C. E. Nebel, M. Stutzmann, H. Güttler, R. ZachaiSubbandgap absorption of chemical-vapor-deposition diamond films, with nitrogen contents varying from 10 to 132 ppm has been explored by the constant-photoconductivity method (CPM), photothermal-deflection spectroscopy (PDS) and electron spin resonance (ESR). The spectra measured by PDS increase... (Read more)
- 958. Phys. Rev. B 54, 7881 (1996) , “Hydrogen-related defects in polycrystalline CVD diamond”, X. Zhou, G. D. Watkins, K. M. McNamara Rutledge, R. P. Messmer, S. ChawlaBy simulating the line shapes of a commonly observed S=1/2 electron paramagnetic resonance (EPR) center in polycrystalline chemical vapor deposited (CVD) diamond at 9.8, 14, 20, and 35 GHz, we conclude that the EPR signal, which we label H1, results from a unique defect with a single hydrogen atom... (Read more)
- 959. Phys. Rev. B 54, R11129 (1996) , “Thermally Induced Interface Degradation in (111) Si/SiO2 Traced by Electron Spin Resonance”, A. Stesmans, V. V. Afanas’ev.Thermal post-oxidation interface degradation in (111) Si/SiO2 has been isolated by electron-spin resonance (ESR) as a permanent Pb (Si ? Si3) interface defect creation. This process, initiating from ?640 °C onward, reveals interface breakdown on an atomic scale as... (Read more)
- 960. Phys. Rev. B 54, R6803 (1996) , “Infrared Absorption in Silicon from Shallow Thermal Donors Incorporating Hydrogen and a Link to the NL10 Paramagnetic Resonance Spectrum”, R. C. Newman, J. H. Tucker, N. G. Semaltianos, E. C. Lightowlers, T. Gregorkiewicz, I. S. Zevenbergen, C. A. J. Ammerlaan.Shallow thermal donors (STDs), generated in Czochralski silicon, annealed at 470°C in a hydrogen plasma, and detected by their infrared (IR) electronic absorption, have ground states that shift slightly (?0.1 cm-1) to smaller binding energies, when deuterium is introduced instead of... (Read more)
- 961. Phys. Lett. A 213, 89-92 (1996) , “Ground-state zero-field splitting of Mn2+ ions in ZnO and CdSe crystals”, Xiao-Yu KuangZnO and CdSe crystals have similar hexagonal wurtzite structures with a contraction along the c-axis of the crystal, but contrary electronic fine structures for ZnO:Mn2+ (D < 0) and CdSe:Mn2+ (D > 0) have been found in EPR experiments. We demonstrate that the ground-state splitting in ZnO:Mn2+... (Read more)
- 962. Mater. Sci. Eng. B 36, 133 (1996) , “EPR of Interstitial Hydrogen in Silicon: Uniaxial Stress Experiments”, Yu. V. Gorelkinskii and N. N. NevinnyiThis paper deals with an electron paramagnetic resonance (EPR) study of the Si-AA9 EPR center, which has been previously identified as arising from a 111 bond-centered (BC) interstitial hydrogen in the neutral charge state (H0) and is a hydrogenic analog of the anomalous state of muonium (Mu*) in... (Read more)
- 963. Mater. Sci. Eng. B 36, 77 (1996) , “New Oxygen-Related EPR Spectra in Proton-Irradiated Silicon”, Kh. A. Abdullin, B. N. Mukashev, A. M. Makhov and Yu. V. GorelkinskiiAn electron-paramagnetic resonance (EPR) study of proton-irradiated silicon has revealed two new EPR spectra labeled Si-AA13 and Si-AA14. Spectrum AA13 has C3v symmetry (g = 1.9985 and g = 2.0024 ± 0.0002), AA14 C1 symmetry. These spectra correspond to positive (B+) and negative (B−)... (Read more)
- 964. Mater. Sci. Eng. B 38, 138 (1996) , “Process development for III–V nitrides”, S. J. Pearton, C. R. Abernathy, F. Ren, R. J. Shul, S. P. Kilcoyne, M. Hagerott-Crawford, J. C. Zolper, R. G. Wilson, R. G. Schwartz and J. M. ZavadaAdvances in GaN-based electronic and photonic devices requires improved patterning methods, better Ohmic contacts and higher p-type dopong levels. In this paper, new developments in dry and wet etching. Ohmic contacts and epitaxial growth of III–V nitrides are reported. We find that high ion... (Read more)
- 965. Mater. Sci. Eng. B 42, 213-216 (1996) , “Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients”, P. Kamiński, R. Ćwirko, M. Palczewska and R. KozłowskiA new digital approach to PICTS technique was applied to study deep levels in undoped SI GaAs and Fe-doped InP. For SI Fe-doped InP, the 0.64-eV trap related to Fe2 + /Fe3 + acceptor level as well as the 0.53-eV trap attributed to a native defect, were observed. For SI undoped GaAs, three traps: T1... (Read more)
- 966. Mater. Res. Soc. Symp. Proc. 395, 657 (1996) , “Spin-dependent transport in GaN Light emitting diodes”, M.S.Brandt , N.M.Reinacher , O.Ambacher , M.Stutzmann
- 967. Jpn. J. Appl. Phys. 35, 3937 (1996) , “Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon”, N. Fukata, S. Sasaki, S. Fujimura, H. Haneda, K. Murakami.We have studied hydrogen passivation of phosphorus (P) donors and hydrogen states in heavily doped n-type silicon by electron spin resonance (ESR) of P donors and conduction electrons. A remote-treatment method of atomic hydrogen was used for the introduction of H atoms. The hydrogen... (Read more)
- 968. JETP 83, 829 (1996) , “Influence of the Splitting of Dislocations on the g Factor of Holes in a One-Dimensional Dislocation Band”, V. V. Kveder, A. I. Shalynin, É. A. Shte?nman, A. N. Izotov.
- 969. J. Phys.: Condens. Matter 8, 837 (1996) , “An electron paramagnetic resonance investigation of paramagnetic defects in diamond films grown by chemical vapour deposition”, D. F. Talbot-Ponsonby, M. E. Newton, J. M. Baker, G. A. Scarsbrook, R. S. Sussmann, C. J. H. WortDefects in free-standing diamond films grown by microwave-plasma-assisted chemical vapour deposition have been studied by electron paramagnetic resonance (EPR). The EPR spectra observed for the as-grown material each consisted of two distinguishable Lorentzian lines at g = 2.0028(2), along with... (Read more)
- 970. J. Phys.: Condens. Matter 8, L505 (1996) , “Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing”, A. Stesmans, V. V. Afanas’ev.The generation of paramagnetic interfacial defects (Si ) in standard thermal by thermal processing has been studied in the temperature range . Besides consolidating the well known dissociation (activation) process (prominent from approximately onward) of pre-existing entities, electron spin... (Read more)
- 971. J. Non-Cryst. Solids 198-200, 267 (1996) , “Semiclassical model of electrically detected magnetic resonance in undoped a-Si:H”, K. Lips, C. Lerner and W. FuhsA simple model for spin-dependent photoconductivity is presented based on rate equations for the density of spin pairs in singlet and triplet configuration. The pairs are formed by electrons localized in the conduction band tail and neutral dangling bonds (e—D°). We take into... (Read more)
- 972. J. Lumin. 66&67, 462 (1996) , “Spin-Dependent Dynamical Processes of Excited States in Semiconductors”, J. –M. Spaeth.Semiconductors with donors and acceptors can be brought into excited states by illumination with above-band-gap light. In a magnetic field, the recombination of donor electrons and acceptor holes is spin-dependent and can be used to detect electron paramagnetic resonance electrically (EDEPR).... (Read more)
- 973. J. Appl. Phys. 79, 7983-7990 (1996) , “Mechanisms behind green photoluminescence in ZnO phosphor powders”, K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, B. E. GnadeWe explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green... (Read more)
- 974. J. Appl. Phys. 79, 9250 (1996) , “Defect-dipole alignment and tetragonal strain in ferroelectrics”, W. L. Warren, G. E. Pike, K. Vanheusden, D. Dimos, B. A. Tuttle, J. RobertsonWe show the alignment of defect dipoles along the direction of the spontaneous polarization in polycrystalline Pb(Zr,Ti)O3 and BaTiO3 ferroelectric ceramics using electron paramagnetic resonance (EPR). The alignment is demonstrated via orientation dependent paramagnetic centers... (Read more)
- 975. J. Appl. Phys. 80, 3435 (1996) , “Oxygen-Related 1-Platinum Defects in Silicon: An Electron Paramagnetic Resonance Study”, U. Juda, O. Scheerer, M. Höhne, H. Riemann, H.-J. Schilling, J. Donecker, and A. GerhardtA monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as... (Read more)
- 976. J. Appl. Phys. 80, 5234 (1996) , “Electron paramagnetic resonance of Nb-doped BaTiO3 ceramics with positive temperature coefficient of resistivity”, S. Jida, T. MikiParamagnetic centers in Nb-doped BaTiO3 ceramics are measured at 77500 K by electron paramagnetic resonance (EPR) for investigating the role of the centers on the well-known positive temperature coefficient of resistivity (PTCR) effect (PTCR at the Curie temperature). EPR detects... (Read more)
- 977. J. Appl. Phys. 80, 6198 (1996) , “Recombination-enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si”, S. Sakauchi, M. Suezawa, K. Sumino, H. Nakashima.We studied the recombination-enhanced Fe atom jump between the first (1st) and second (2nd) neighbor sites of FeAl and FeB pairs in Si. We first annealed specimens at 80 °C to generate Feacceptor pairs after doping of Fe. Concentrations of the 1st and 2nd neighbor... (Read more)
- 978. Diamond Relat. Mater. 5, 1113 (1996) , “Spatial distribution of impurity defects in synthetic diamonds obtained by the BARS technology1”, A. Yelisseyev, V. Nadolinny, B. Feigelson, S. Terentyev, S. NosukhinLuminescence and optical transmission topography reveal the inhomogeneities in distribution of impurity nitrogen and nickel-related defects in synthetic diamonds obtained in high-pressure apparatus of the split-sphere type (Russian acronym: BARS). Owing to considerable supersaturations and... (Read more)
- 979. Appl. Phys. Lett. 68, 1102 (1996) , “Electrical Detection of Electron Nuclear Double Resonance in Silicon”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.Electrical detection of electron nuclear double resonance (EDENDOR) is demonstrated using shallow P donors in silicon. The EDENDOR spectra are compared with conventional ENDOR spectra. With EDENDOR, both the 31P hyperfine as well as 29Si superhyperfine interactions could be... (Read more)
- 980. Appl. Phys. Lett. 68, 1669 (1996) , “Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2”, J. H. StathisA spin-dependent trap-assisted tunneling current has been detected in a thin (44.5 Å) SiO2 film. An electron paramagnetic resonance signal, obtained from the tunnel current, provides the first microscopic information regarding the identity of defects responsible for stress-induced... (Read more)
- 981. Appl. Phys. Lett. 68, 2076 (1996) , “Passivation of Pb0 and Pb1 Interface Defects in Thermal (100) Si/SiO2 with Molecular Hydrogen”, A. Stesmans.It is found that the passivation of both the Pb0 and Pb1 defects in (100)Si/SiO2 (grown at < 750 °C) with molecular H2 may well be described by the same defect- H2 reaction-limited kinetic model applying to... (Read more)
- 982. Appl. Phys. Lett. 68, 2123 (1996) , “Concentration of paramagnetic centers in boron doped polycrystalline diamond films”, E. Colineau, A. Deneuville, J. Mambou, and E. GheeraertThough no boron signal is identified, with respect to their boron content the narrow and broad components of the electron spin resonance signal in boron doped polycrystalline film decrease from 1018 to 1016 cm 3. This is ascribed to two different structural... (Read more)
- 983. Appl. Phys. Lett. 68, 2723 (1996) , “Revision of H2 passivation of Pb interface defects in standard (111)Si/SiO2”, A. Stesmans.Passivation with molecular H2 of Pb interface defects in thermal (111)Si/SiO2 (dry; 870 °C) over extended temperature (TH) and time (tH) ranges unveil nonexponential decay of [Pb] vs... (Read more)
- 984. Appl. Phys. Lett. 68, 403 (1996) , “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors”, K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. VoigtBy combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders.... (Read more)
- 985. Appl. Phys. Lett. 69, 2252 (1996) , “Hole traps in oxide layers thermally grown on SiC”, V. V. Afanas'ev and A. StesmansHole trapping in the oxides thermally grown on different polytypes of SiC (3C, 4H, 6H) was studied using photogeneration of charge carriers in SiO2 and electron-spin-resonance spectroscopy. Oxygen vacancy defects were found to be the dominant hole traps in the oxide. Generation of... (Read more)
- 986. Appl. Phys. Lett. 69, 3215 (1996) , “Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond”, C. F. O. Graeff, E. Rohrer, C. E. Nebel, M. Stutzmann, H. Güttler, R. ZachaiInvestigations of polycrystalline chemical vapor deposited diamond films by electron-spin-resonance (ESR), light-induced (L)ESR, and the constant photoconductivity method have identified dispersed substitutional nitrogen (P1 center) as the main paramagnetic form of N incorporated in the CVD diamond.... (Read more)
- 987. Appl. Phys. Lett. 69, 3836 (1996) , “Electron paramagnetic resonance characterization of diamond films fabricated with different methane concentrations”, D. J. Keeble, B. RamakrishnanElectron paramagnetic resonance (EPR) studies were performed on thin diamond films fabricated by hot-filament chemical vapor deposition using methane concentrations varying from 0.25% to 5%. The bulk spin concentration and the peak to peak linewidth for the characteristic g=2.0027(2) EPR... (Read more)
- 988. Appl. Phys. Lett. 69, 3854 (1996) , “Electron Paramagnetic Resonance of Erbium Doped Silicon”, J. D. Carey, J. F. Donegan, R. C. Barklie, F. Priolo, G. Frenzò, S. Coffa.Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 1015 Er/cm2. One sample was coimplanted with oxygen to give an impurity concentration of 1020 O/cm3 and 1019 Er/cm3. In this... (Read more)
- 989. Solid State Commun. 101, 219-223 (1997) , “Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property”, Y. J. Park, T. H. Yeom, I. -W. Park, S. H. Choh , S. -K. MinThe dependences of Cr2+ and Cr3+ electron paramagnetic resonance (EPR) signals as a function of Cr concentration have been investigated in conjunction with clarifying the atomic configuration for obtaining semi-insulating properties in a vertical gradient freeze (VGF)-GaAs single crystal codoped... (Read more)
- 990. Solid State Commun. 101, 611-615 (1997) , “Identification of iron transition group trace impurities in GaN bulk crystals by electron paramagnetic resonance”, P. G. Baranov, I. V. Ilyin and E. N. MokhovWe report on the observation of electron paramagnetic resonance of iron, manganese and nickel trace impurities in bulk GaN crystals grown by the sublimation sandwich method. The resolved hyperfine structure due to interaction with 55Mn (I = 5/2) nuclei has been observed in GaN, allowing unambiguous... (Read more)
- 991. Solid State Commun. 102, 595 (1997) , “Thermally Activated Change of Symmetry of Carbon Related Center in Irradiated Silicon”, M. M. Afanasjev,R. Laiho, L. S. Vlasenko and M. P. VlasenkoTwo electron paramagnetic resonance (EPR) spectra related to the excited spin-1 state of a carbon-silicon-carbon complex are detected in irradiated silicon with microwave spin dependent photoconductivity measurements. They indicate transformation of the complex from monoclinic to trigonal symmetry... (Read more)
- 992. Solid State Commun. 102, 715-720 (1997) , “Nuclear spin relaxation in AlGaAs/GaAs heterostructures observed via optically detected magnetic resonance (ODMR) experiments”, M. Schreiner, H. Pascher, G. Denninger, S. A. Studenikin, G. Weimann and R. LöschThe resonant field at which an electron spin resonance (ESR) occurs may be shifted by an effective magnetic field, which is due to spin polarized nuclei. This shift, known as Overhausershift, is caused by the field of all polarized nuclei without respect to their isotopic number. Irradiation of the... (Read more)
- 993. Semicond. Sci. Technol. 12, 1404 (1997) , “Shallow Thermal Donors Associated with H, Al and N in Annealed Czochralski Silicon Distinguished by Infrared Spectroscopy”, R. E. Pritchard, M. J. Ashwin, J. H. Tucker, R. C. Newman, E. C. Lightowlers, T. Gregorkiewicz, I. S. Zevenbergen, C. A. J. Ammerlaan, R. Falster, M. J. Binns.Electronic transitions of shallow thermal donors (STDs) in aluminium-doped Czochralski (CZ) Si annealed at C have different energies from those of STDs observed in annealed, hydrogenated boron-doped CZ Si. A third type of STD is observed in boron-doped Si pre-heated in nitrogen gas and annealed... (Read more)
- 994. Rev. Sci. Instrum. 68, 1823 (1997) , “Magnetic Resonance Force Detection and Spectroscopy of Electron Spins in Phosphorus-Doped Silicon”, K. Wago, O. Züger, J. Wegener, R. Kendrick, C. S. Yannoni, and D. RugarElectron spin resonance (ESR) of phosphorus-doped silicon was detected using a low temperature magnetic resonance force microscope (MRFM). Force-detected ESR spectra were obtained using an amplitude or frequency modulated microwave field to cyclically saturate the spin magnetization. For a sample... (Read more)
- 995. Rev. Sci. Instrum. 68, 2511 (1997) , “Sensitivity enhancement in magnetic circular dichroism of absorption-detected electron paramagnetic resonance with a mirror cavity”, F. K. KoschnickA mirror cavity was developed to improve the signal to noise (S/N) ratio of the measurement of the magnetic circular dichroism of the absorption (MCDA) and of the MCDA-detected electron paramagnetic resonance (EPR). In this cavity the measurement light beam passes through the sample several times... (Read more)
- 996. Phys.Rev.Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”,he electron paramagnetic resonance spectrum of float-zone silicon recorded after implantation with protons contains a strongly temperature dependent signal from a vacancy-type defect. The signal displays monoclinic-I symmetry below 65 K and trigonal symmetry above 100 K. This symmetry change, together with a hyperfine splitting from a single proton, allows an unequivocal identification with VH0, the neutral charge state of a vacancy containing a single hydrogen atom. The striking similarity between the properties of VH0 and VP0 (the E center) corroborate our identification.
- 997. phys. stat. sol. (a) 159, R5 (1997) , “Electrically Detected Magnetic Resonance (EDMR) of Defects in GaN Light Emitting Diodes”, M.W.Bayerl , M.S.Brandt , M.StutzmannCompared to standard Electron Spin Resonance (ESR), EDMR has proven to be a more sensitive method in detecting paramagnetic states in semiconductors. Its application to electronic devices is particularly interesting because performance limitations in electrical transport can be correlated with... (Read more)
- 998. phys. stat. sol. (a) 162, 95-151 (1997) , “EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes”, S. Greulich-WeberInvestigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 999. Phys. Rev. Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”, B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen
- 1000. Phys. Rev. B 55, 16245 (1997) , “Electron Paramagnetic Resonance of Conduction-Band Electrons in Silicon”, C. F. Young, E. H. Poindexter, G. J. Gerardi, W. L. Warren, D. J. Keeble.The g value of conduction-band electrons in silicon was properly determined by using electron paramagnetic resonance. A linear empirical relationship was first found between the g values and the thermal ionization energies of several well-known group-V substitutional shallow donors in silicon. An... (Read more)
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