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- 701. J. Appl. Phys. 67, R1 (1990) , “Deep donor levels (DX centers) in III-V semiconductors”, P. M. MooneyDX centers, deep levels associated with donors in III-V semiconductors, have been extensively studied, not only because of their peculiar and interesting properties, but also because an understanding of the physics of these deep levels is necessary in order to determine the usefulness... (Read more)
- 702. J. Appl. Phys. 68, 1358 (1990) , “Strong correlation between new donors and rodlike defects formed at 650 °C in phosphorus-doped, carbon-lean Czochralski silicon preannealed at 450 °C”, Yoichi Kamiura, Fumio Hashimoto, and Minoru YonetaEvidence is presented for strong correlation between new donors and rodlike defects generated at 650 °C in phosphorus-doped, carbon-lean Czochralski silicon preannealed at 450 °C. It is proposed that there are, in general, several types of new donors depending on experimental conditions, and... (Read more)
- 703. IEEE Trans. Nucl. Sci. 37, 1650-1657 (1990) , “Spin dependent recombination: A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 704. IBM J.RES. DEVELOP. 34, 227-242 (1990) , “Internal probing of submicron FETs and photoemission using individual oxide traps”, P. Restle, A. Gnudi
- 705. Hyperfine Interactions 64, 535 (1990) , “Temperature dependence of muon-decay positron channeling in semiconductors ”, Simmler H.1 Eschle P.1 Keller H.1 Kndig W.1 Odermatt W.1 Patterson B. D.1 Pmpin B.1 Savi? I. M.1 Schneider J. W.1 Straumann U.1 and Trul P.1Planar channeling data ofμ +-decay positrons in various semiconductors are reported. Together with the extensive spectroscopic data supplied by transverse μSR, the location of the different states of the hydrogen pseudo-isotopeμ+ e- (muonium) can be identified by means of planar simulations. In high purity silicon as well as in gallium arsenide a thermally activated site transition is observed which can be assigned to a transition between different muonium states. (Read more)
- 706. Hyperfine Interactions 64, 561 (1990) , “Final states in Si and GaAs via RF ?SR spectroscopy ”, Kreitzman S. R.1 Pfiz T.1 Sun-Mack S.2 Riseman T. M.1 Brewer J. H.1 Williams D. Ll.1 and Estle T. L.3The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu* states at any temperature. However, our results on the diamagnetic final state (μ f+) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu* and Mu. We observe a full μ f+ fraction at 317 K when the Mu relaxation rate is above 10 μs-1. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu* and Mu to a μ+ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively (Read more)
- 707. Appl. Phys. Lett. 57, 162 (1990) , “Chemical Kinetics of Hydrogen and (111) Si-SiO2 Interface Defects”, K. L. Brower and S. M. MyersElectron paramagnetic resonance (EPR) measurements and theoretical considerations have yielded a unified model for the hydrogen chemistry of silicon dangling bond Pb defects at the (111) Si-SiO2 interface. Previous EPR measurements indicated that passivation of... (Read more)
- 708. Appl. Phys. Lett. 57, 2663 (1990) , “Maximum density of Pb centers at the (111) Si/SiO2 interface after vacuum anneal”, A. Stesmans and G. Van GorpThe density of interfacial [111]Pb centers, i.e., 0SiSi3 defects with unpaired bond along [111], has been accurately determined by K-band electron spin resonance at 4.3 K on (111)Si/SiO2 structures using various oxidation conditions.... (Read more)
- 709. Sov. Phys. Solid State 33, 1326 (1991) , “Electron Spin Resonance of an Excited Triplet State of a Divacancy in Silicon”, M. P. Vlasenko, L. S. Vlasenko.
- 710. Sov. Phys. Solid State 33, 1409 (1991) , “Electron paramagnetic resonance of phosphorus in diamond”, N. D. Samsonenko, V. V. Toki?, S. V. Gorban’
- 711. Solid-State Electronics 34, 835 (1991) , “Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes”, F. C. Rong, W. R. Buchwald, E. H. Poindexter, W. L. Warren , D. J. KeebleThis paper presents a new model for spin-dependent recombination and generation processes based on the electrical detection of magnetic resonance in semiconductor p-n junction diodes. Based on a modified Shockley-Read recombination statistics, this model differs from those models previously proposed... (Read more)
- 712. Solid State Commun. 78, 321 (1991) , “Shallow donor in buried oxide Si-On-insulator structures revealed by γ-irradiation-induced electron spin resonance activation”, A. Stesmans.Si-on-insulator structures formed by implantation of oxygen (SIMOX) in a single step to a dose 1.8 × 1018 O+ cm−2 into p-type (0 0 1) Si and high temperature annealing have been studied by K-band electron spin resonance (ESR) at 4.3–31 K. γ-irradiation to a dose of 1 Mrad... (Read more)
- 713. Solid State Commun. 79, 119 (1991) , “Oxygen Interaction with Defects at the Si/SiO2 Interface”, J. H. Stathis, S. Rigo, I. Trimaille.Using 17O-enriched thermal oxide on silicon, we have measured the hyperfine interaction between dangling bonds at the (111) interface (Pb centers) and oxygen. Our analysis shows that the Pb center interacts with a single oxygen atom in the SiO2. (Read more)
- 714. Solid State Commun. 80, 439 (1991) , “Electron paramagnetic resonance of nickel in silicon — II. hyperfine and quadrupole interactions”, N. T. Son, A. B. van Oosten and C. A. J. AmmerlaanAn electron paramagnetic resonance (EPR) study on n-type silicon doped with nickel enriched to 88.1% 61Ni is presented. The structure due to the 61Ni isotope with nuclear spin I = 3/2 was investigated. The EPR spectrum with the appearance of "forbidden" lines can be described by a spin... (Read more)
- 715. Semicond. Sci. Technol. 6, B111 (1991) , “Metastable defects in silicon: hints for DX and EL2?”, G. D. WatkinsA review is given of defects that display metastability in silicon, with emphasis on those that have been identified and the various mechanisms that they reveal for the phenomenon. Pair defects described include interstitial-iron-substitutional-group-III-acceptors and ones formed by interstitial... (Read more)
- 716. Semicond. Sci. Technol. 6, B70 (1991) , “Bistability, local symmetries and charge states of Sn-related donors in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy”, D. L. Williamson, P. GibartThe bistable character of Sn donors AlxGa1-xAs for x>0.2 or in GaAs under pressure >2.4 GPa has been studied by 119Sn Mossbauer spectroscopy (MS). The shallow Sn donor state and the deep Sn DX state are observed to exist simultaneously and are readily... (Read more)
- 717. Semicond. Sci. Technol. 6, B9 (1991) , “Comparison of three DX structural calculations presented at Thessaloniki”, G. A. BaraffThree structural calculations of the DX centre presented at Thessaloniki are of especial interest. Although they were carried out using nominally the same calculational apparatus, namely first-principles pseudopotentials, local density approximation, large unit cells etc, the three reached vastly... (Read more)
- 718. Rev. Sci. Instrum. 62, 2969 (1991) , “Electron paramagnetic resonance Q-band bridge with GaAs field-effect transistor signal amplifier and low-noise Gunn diode oscillator”, James S. Hyde, M. E. Newton, Robert A. Strangeway, Theodore G. Camenisch, and W. FronciszA Varian Q-band E-110 microwave bridge for electron paramagnetic resonance (EPR) spectroscopy has been modified by addition of a low-phase noise Gunn diode oscillator of our own design, a low-noise GaAs field-effect transistor microwave signal amplifier, and a balanced mixer requiring high... (Read more)
- 719. Physica B 170, 155 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V.Gorelkinskii, N.N.NevinnyiA review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 ± 0.04 eV with a second-order pre-exponential factor, K0 = (1.25 ± 2.5) × 10-7 cm3/s. A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.
- 720. Physica B 170, 155-167 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V. Gorelkinskii, N.N. Nevinnyi
- 721. phys. stat. sol. (b) 164, 503 (1991) , “EPR of New Platinum-Related Complexes in Silicon I. Defects of Symmetry C1h Formed at Intermediate Temperatures”, M. Höhne, W. Gehlhoff.The variety of Pt-related complex defects in silicon is enlarged by EPR detection of a new group of defects, each of them containing one Pt ion. They are formed by different annealing procedures, including a step at intermediate temperatures. Two of the new complexes exhibit an EPR spectroscopic... (Read more)
- 722. phys. stat. sol. (b) 165, 189 (1991) , “EPR of New Platinum-Related Complexes in Silicon. II. Coexistence of a Tetragonal Jahn-Teller System and a Nearly Trigonal System in One Pair”, M. Höhne, W. Gehlhoff.A spectroscopic peculiarity of two Pt-related complex defects is interpreted for both of them by assuming one Pt ion in a crystal field, which is tetragonal, though another defect is trigonally coordinated. This coexistence is discussed in the framework of a static Jahn-Teller effect. Wave... (Read more)
- 723. phys. stat. sol. (a) 123, 357 (1991) , “Formation of New Donors and Structural Defects During Low-Temperature Oxygen Precipitation in CZ-Grown Silicon”, Y. Kamiura, F. Hashimoto, M. YonetaIt is demonstrated for the first time that the well known enhancement effects of carbon and low-temperature preannealing on the new donor (ND) generation at 650 °C may be ascribed to the formation of three kinds of NDs, which can be distinguished by their characteristic deep-level transient... (Read more)
- 724. Phys. Rev. Lett. 66, 2360 (1991) , “Deep State of Hydrogen in Crystalline Silicon: Evidence for Metastability”, B. Holm, K. Bonde Nielsen, and B. Bech NielsenAfter proton implantation into n-type silicon at 45 K, a bistable hydrogen center with a band-gap level Ec-Et=0.16 eV is observed by deep-level transient spectroscopy. The center anneals at ?100 K under zero bias with a decay constant ?=(3.0×1012... (Read more)
- 725. Phys. Rev. Lett. 66, 3028 (1991) , “Silicide formation and the generation of point defects in silicon ”, B. G. Svensson and M. O. Aboelfotoh and J. L LindströmThe annealing behavior of the divacancy (V2) acceptor levels in silicon is investigated with the use of Schottky-barrier structures formed by the deposition of copper on n-type silicon irradiated with 2-MeV electrons. At temperatures below ∼150 °C an anomalously high annealing rate of... (Read more)
- 726. Phys. Rev. Lett. 66, 774 (1991) , “Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure”, J. A. Wolk, M. B. Kruger, J. N. Heyman, W. Walukiewicz, R. Jeanloz, E. E. HallerWe report the observation of a local vibrational mode (LVM) in hydrostatically stressed, Si-doped GaAs. The corresponding infrared absorption peak is distinct from the SiGa shallow-donor LVM peak and is assigned to the Si DX center. The relative intensities of the Si DX LVM and the Si... (Read more)
- 727. Phys. Rev. Lett. 67, 112 (1991) , “Photoluminescence Studies of the EL2 Defect in Gallium Arsenide under External Perturbations”, M. K. Nissen, A. Villemaire, and M. L. W. ThewaltThe fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full Td symmetry and hence support the isolated-arsenic-antisite model of EL2.... (Read more)
- 728. Phys. Rev. Lett. 67, 1149 (1991) , “Structure of Gold in Silicon”, G. D. Watkins, M. Kleverman, A. Thilderkvist, and H. G. GrimmeissDetailed information on the electronic structure of the neutral substitutional gold center in silicon (Au0) has been revealed from Zeeman studies of the donor and acceptor excitation spectra at 793 and 611 meV, respectively. The center is paramagnetic, S=1/2, with g??2.8 and... (Read more)
- 729. Phys. Rev. Lett. 67, 2517 (1991) , “Experimental evidence for excitonic mechanism of defect generation in high-purity silica”, T. E. Tsai and D. L. GriscomDirect evidence for the creation of oxygen-vacancy, oxygen-interstitial pairs in SiO2 glasses by an excitonic mechanism is developed from an electron-spin-resonance study of high-purity fused silicas exposed to highly focused 6.4-eV excimer laser light. (Read more)
- 730. Phys. Rev. Lett. 67, 3420 (1991) , “Spin Dynamics and Electronic States of N-V Centers in Diamond by EPR and Four-Wave-Mixing Spectroscopy”, D. A. Redman, S. Brown, R. H. Sands, S. C. RandA new phase-modulation technique for nonlinear laser spectroscopy is applied with a relative resolving power in the sub-Hz range to measure fundamental relaxation processes of the N-V center in diamond. Complementary EPR experiments versus temperature establish the spin character of the ground state... (Read more)
- 731. Phys. Rev. B 43, 14569 (1991) , “Kinetics of holes optically excited from the AsGa EL2 midgap level in semi-insulating GaAs”, G. Hendorfer and U. KaufmannElectron paramagnetic resonance (EPR) has been used to study the growth of the dominant acceptor EPR signals FR1 and GR2 in undoped semi-insulating GaAs under illumination as well as their spontaneous intensity changes when the light is switched off. These studies locate the FR1 level at... (Read more)
- 732. Phys. Rev. B 43, 4028 (1991) , “Electronic structure of interstitial carbon in silicon ”, Morgan Besson and Gary G. DeLeoWe report the results of electronic structure calculations for the carbon interstitial in silicon in the positive, neutral, and negative charge states. We have used two self-consistent complementary cluster approaches. The modified neglect of diatomic differential overlap method produces reliable... (Read more)
- 733. Phys. Rev. B 43, 6569 (1991) , “Optically detected magnetic resonance of dislocations in silicon”, V. Kveder, P. Omling, H. G. Grimmeiss, Yu. A. OsipyanThe observation of optically detected magnetic resonance (ODMR) signals directly correlated with dislocations in silicon is reported. The ODMR signals are identified as resonances from free electrons, dangling bonds, and quasifree holes bound to a one-dimensional potential in straight dislocations.... (Read more)
- 734. Phys. Rev. B 44, 10525 (1991) , “Electronic structure and electron-paramagnetic-resonance properties of intrinsic defects in GaAs”, C. DelerueThe electronic structure of vacancies, antisites, self-interstitials, and some related complex defects in GaAs is calculated using a self-consistent semiempirical tight-binding technique. In particular, we give the electron densities on the various atoms to predict the... (Read more)
- 735. Phys. Rev. B 44, 11353 (1991) , “O Environment of Unpaired Si Bonds (Pb Defects) at the (111)Si/SiO2 Interface”, A. Stasmans, K. Vanheusden.The immediate oxygen environment in the silica side of the [111]Pb defect (an interfacial ?Si?Si3 defect with an unpaired sp3-like hybrid perpendicular to the interface) has been revealed from 17O hyperfine (HF) structure electron-spin-resonance... (Read more)
- 736. Phys. Rev. B 44, 11486-11489 (1991) , “Reorientation of the B-H complex in silicon by anelastic relaxation experiments”, G. Cannelli, R. Cantelli, M. Capizzi, C. Coluzza, F. Cordero, A. Frova, A. Lo PrestiThe elastic energy loss between 60 and 300 K was measured in SiBxHy at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time... (Read more)
- 737. Phys. Rev. B 44, 3012 (1991) , “Magnetic-resonance studies of interstitial Mn in GaP and GaAs”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz, and C. A. J. AmmerlaanWe report the observation of an additional electron-paramagnetic-resonance (EPR) center in neutron-irradiated GaP. The center labeled as GaP-NL1 was further investigated with the electron-nuclear double-resonance technique. We also observed another, similar EPR center in GaAs doped with Mn, which we... (Read more)
- 738. Phys. Rev. B 44, 3409 (1991) , “Hydrogen States Probed by Electron-Spin Resonance of Phosphorus Donors in Silicon”, Kouichi Murakami, Hiromitsu Suhara, Shigeru Fujita, and Kohzoh MasudaHydrogen in phosphorus-doped silicon has been investigated, by monitoring shallow donor P by electron-spin resonance (ESR). Significant broadening in motionally narrowed ESR lines is first observed in Si samples treated with hydrogen plasma. It is found from the donor-concentration dependence that... (Read more)
- 739. Phys. Rev. B 44, 3678 (1991) , “Electron-Paramagnetic-Resonance Identification of the Manganese-Gallium Pair in Silicon”, J. Kreissl, K. Irmscher, W. Gehlhoff, P. Omling, P. Emanuelsson.An electron-paramagnetic-resonance (EPR) investigation of silicon doped with gallium and manganese shows a defect-related spectrum with trigonal symmetry. The proof that Mn and Ga are involved in the defect is based on the observed hyperfine interactions. A complicated fine-structure behavior... (Read more)
- 740. Phys. Rev. B 44, 6125 (1991) , “Electron-Paramagnetic-Resonance Identification of a Trigonal Chromium-Indium Pair in Silicon”, P. Emanuelsson, P. Omling, H. G. Grimmeiss, J. Kreissl, W. Gehlhoff.An EPR spectrum in silicon doped with chromium and indium is reported. The spectrum, which shows a complicated fine and hyperfine structure could be identified as originating in a chromium-indium pair of trigonal symmetry. The fine structure corresponds to transitions within the... (Read more)
- 741. Mater. Sci. Forum 83-87, 887 (1991) , “Defects in Semisonductors 16”, K. Krambrock, J.-M. Spaeth
- 742. J. Phys.: Condens. Matter 3, 3591 (1991) , “ENDOR studies on the W7 di-nitrogen centre in brown diamond”, M. E. Newton, J. M. BakerA new technique, involved rapid and repeated sweeping of radio-frequency irradiation through a wide frequency range, has been used to enhance the ENDOR signal of the W7 di-nitrogen centre in diamond. This allowed the determination of the following magnetic hyperfine and electric quadrupole... (Read more)
- 743. J. Phys.: Condens. Matter 3, 3605 (1991) , “Models for the di-nitrogen centres found in brown diamond”, M. E. Newton, J. M. BakerNo new experiments are reported in this paper: the paper comprises a re-interpretation of published EPR data of the various di-nitrogen centres in brown diamond, including the new ENDOR results of the authors' previous paper on the W7 centre (see ibid., vol.3, p.3591, 1991). The new evidence about... (Read more)
- 744. J. Phys. Soc. Jpn. 60, 3093 (1991) , “First Principle Calculation of the DX-CenterGround-States in GaAs, AlxGa1-xAs Alloysand AlAs/GaAs Superlattices”, Eiichi Yamaguchi, Kenji Shiraishi, Takahisa OhnoThe atomistic nature of the deep donor levels referred to as DX centers in GaAs, AlxGa1-xAs alloys and AlAs/GaAs superlattices is investigated by applying the ab initio self-consistent pseudopotential method to 64-atom super cells. The total energy and... (Read more)
- 745. J. Lumin. 48-49, 803 (1991) , “Microwave-induced line-narrowing of the N-V defect absorption in diamond”, E. van Oort, B. van der Kamp, R. Sitter and M. GlasbeekFor the diamond N-V center results of optically detected magnetic resonance experiments are reported using narrow-band laser excitation. Strain-induced splittings of the 3A ground state are observed in the ODMR spectra. In addition, an internal strain-induced lifting of the orbital degeneracy in the... (Read more)
- 746. J. Appl. Phys. 69, 175 (1991) , “Electron Spin Resonance of Defects in Silicon-on-Insulator Structures Formed by Oxygen Implantation: Influence of ? Irradiation”, A. Stesmans, A. G. Revesz, H. L. Hughes.Silicon-on-insulator structures obtained by single-step implantation of oxygen followed by high temperature annealing were studied by K-band electron spin resonance (ESR) at 4.331 K. The spectrum has a strong line at g=2.0059±0.0001 with a spin density of... (Read more)
- 747. J. Appl. Phys. 70, 2220 (1991) , “Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films”, W. L. Warren, P. M. Lenahan, J. KanickiWe have investigated the effects of different post-deposition temperature anneals and N-H concentrations, on the generation of ultraviolet (UV)-induced two-coordinated nitrogen dangling bonds in plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films using electron spin resonance... (Read more)
- 748. J. Appl. Phys. 70, 346 (1991) , “Structural identification of the silicon and nitrogen dangling-bond centers in amorphous silicon nitride”, W. L. Warren, F. C. Rong, E. H. Poindexter, G. J. Gerardi, J. KanickiWe report the observation of both silicon and nitrogen paramagnetic defect centers using X-band and Q-band electron spin resonance microwave excitation frequencies. By using two different microwave frequencies along with a computer analysis of the resonance lineshapes, we have been... (Read more)
- 749. J. Appl. Phys. 70, 5401-5403 (1991) , “Deep-level transient spectroscopy on p-type silicon crystals containing tungsten impurities”, Toshio Ando, Seiichi Isomae, and Chusuke MunakataTungsten deep levels are investigated to clarify energies, which are inconsistent among current research. Hole traps located at 0.41 eV above the top of the valence band are determined to be due to tungsten impurities. The concentration of hole traps is almost one-third of that of the tungsten... (Read more)
- 750. Appl. Surf. Sci. 48-49, 478-482 (1991) , “ESR studies on luminescent ZnS:Mn films and CdS---ZnS:Mn superlattices deposited on a GaAs(100) substrate by hot-wall epitaxy”, Takato Nakamura, Yoji Takeuchi, Hitoshi Muramatsu , Hiroshi Fujiyasu , Yoichiro NakanishiLuminescent ZnS:Mn thin films and CdS---ZnS:Mn superlattices on a GaAs(100) substrate prepared by the hot-wall epitaxy technique have been examined by means of electron spin resonance (ESR) spectroscopy. It was observed that the lowest energy transition assigned to M1 = −5/2 splits into... (Read more)
- 751. Appl. Surf. Sci. 50, 273-276 (1991) , “Interstitial Mn as a new donor in GaP and GaAs: an EPR study”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz , C. A. J. AmmerlaanWe report the observation of a new electron paramagnetic resonance centre in neutron-irradiated GaP and a similar new EPR centre in Mn-doped GaAs. Both centres have been identified as interstitial Mn and act as a donor. To our knowledge this is the first observation by EPR of an interstitial... (Read more)
- 752. Appl. Surf. Sci. 50, 277-280 (1991) , “Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-EPR”, T. Benchiguer, E. Christoffel, A. Goltzené, B. Mari, B. Meyer and C. SchwabWe have compared two different models which give account for the photoquenching behaviour of the As+Ga-related defects. The first model is based on the so-called metastability of the centre and the second one on an electrical charge transfer, resulting from the trapping of the photo-generated... (Read more)
- 753. Appl. Phys. Lett. 56, 949 (1991) , “Evidence for the existence of a negatively charged hydrogen species in plasma-treated n-type Si”, A. J. Tavendale, S. J. Pearton, A. A. WilliamsWe demonstrate the drift of a donor-passivating hydrogen species under the action of the electric field in the depletion region of a reverse-biased Au/n-Si Schottky diode hydrogenated by exposure to a low-frequency discharge. The redistribution is explained by the unidirectional drift of a... (Read more)
- 754. Appl. Phys. Lett. 58, 131 (1991) , “Quenched-in defect removal through silicide formation by rapid thermal processing”, Daniel MathiotWe report on a detailed study of the influence of TiSi2 silicidation on the formation of the quenched-in defects usually created by rapid thermal processing (RTP). It is shown that TiSi2 growth during RTP leads to a total removal of the defects, whereas the presence of... (Read more)
- 755. Appl. Phys. Lett. 58, 137 (1991) , “New application for isothermal capacitance transient spectroscopy: Identification of tunneling in semiconductor-insulator interfaces”, E. C. Paloura, J. Lagowski, and H. C. GatosThe GaAs-insulator interface is characterized by deep level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS). It is demonstrated that while DLTS can only detect transients with temperature-dependent emission rates, ICTS can detect temperature-independent... (Read more)
- 756. Appl. Phys. Lett. 58, 1620 (1991) , “Excitons and light-induced degradation of amorphous hydrogenated silicon”, Martin S. Brandt and Martin StutzmannExcitonic states involved in electronic transport of undoped amorphous hydrogenated silicon (a-Si:H) are observed using spin-dependent photoconductivity (SDPC). Upon light soaking the excitonic signal decreases with regard to the SDPC signal due to recombination via dangling bonds. It has... (Read more)
- 757. Appl. Phys. Lett. 58, 1641 (1991) , “Fundamental chemical differences among Pb defects on (111) and (100) silicon”, J. H. Stathis, L. Dori.Using electron spin resonance, a single defect (called Pb0) is observed at the Si(111)/SiO2 interface, whereas two different defects (called Pb0 and Pb1) are observed at the Si(100)/SiO2 interface. While... (Read more)
- 758. Appl. Phys. Lett. 58, 1742 (1991) , “Electron spin resonance study of laser-annealed (Zn,Mn)O ceramics”, Katsuyasu Kawano, Ryouhei Nakata, and Minoru SumitaInvestigations have been made on the effects of pulse laser annealing on the ceramics (Zn,Mn)O by means of electron spin resonance (ESR) measurements. A remarkable change in the ESR spectrum was observed after annealing by a Nd:YAG pulse laser (=1.064 µm, 57 J/cm2). It... (Read more)
- 759. Appl. Phys. Lett. 58, 2144 (1991) , “Electron Paramagnetic Resonance of a Multistable Inaterstitial-Carbon-Substitutional-Phosphorus Pair in Silicon”, X. D. Zhan and G. D. WatkinsTwo new electron paramagnetic resonance centers are reported, Si-L8 and Si-L9, which are identified with the stable and one of the four metastable configurations, respectively, of a multistable defect recently discovered by deep level transient capacitance spectroscopy in electron-irradiated... (Read more)
- 760. Appl. Phys. Lett. 58, 370 (1991) , “Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface”, M. Geddo, B. Pivac, A. Borghesi, and A. Stella and M. PedrottiThe oxygen content near epitaxial layer-substrate silicon interface was investigated using a micro Fourier transform infrared technique. Systematic measurements, performed in a transversal wafer cross-section configuration, clearly indicated the presence of interstitial oxygen in the epitaxial layer... (Read more)
- 761. Appl. Phys. Lett. 58, 502 (1991) , “Photoluminescence and magnetic resonance studies of Er3 + in MeV ion-implanted GaAs”, P. B. Klein, F. G. Moore, and H. B. DietrichThe effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3 + electron paramagnetic resonance (EPR) signal as well as the Er3 + and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3... (Read more)
- 762. Appl. Phys. Lett. 59, 1870 (1991) , “Paramagnetic nitrogen in chemical vapor deposition diamond thin films”, M. Hoinkis, E. R. Weber, M. I. Landstrass, M. A. Plano, S. Han, D. R. KaniaElectron-paramagnetic-resonance (EPR) studies demonstrate the presence of nitrogen point defects in microwave-assisted chemical vapor deposition (CVD) diamond thin films. Polycrystalline powder pattern EPR spectra are interpreted with g=2.0023, A=114.0 MHz, and... (Read more)
- 763. Appl. Phys. Lett. 59, 1890 (1991) , “New Carbon Related Defects Formed in Nitrogen Rich Czochralski Silicon Crystals”, Akito Hara and Akira OhsawaWe studied some electrical properties of silicon crystals containing carbon, nitrogen, and oxygen. Nitrogen-oxygen complexes are formed in nitrogen- and oxygen-rich silicon crystals. However, we found that carbon suppresses the formation of nitrogen-oxygen complexes. Moreover, new shallow... (Read more)
- 764. Appl. Phys. Lett. 59, 2281 (1991) , “Electron-paramagnetic-resonance study of the isolated arsenic antisite in electron irradiated GaAs and its relation to the EL2 center”, F. C. Rong, W. R. Buchwald, M. Harmatz, E. H. Poindexter, W. L. WarrenArsenic antisites produced in GaAs by room-temperature electron irradiation (RTEI) are examined by electron paramagnetic resonance (EPR). For the first time, this RTEI antisite, which has been believed to be the isolated antisite, is found to be metastable. The most efficient photon energy for... (Read more)
- 765. Appl. Phys. Lett. 59, 3165 (1991) , “Hydrogen diffusivities below room temperature in silicon evaluated from the photoinduced dissociation of hydrogen–carbon complexes”, Yoichi Kamiura, Minoru Yoneta, and Fumio HashimotoWe have evaluated hydrogen and deuterium diffusivities in silicon below room temperature (220–270 K) by analyzing the kinetics of photoinduced dissociation of a chemical etching introduced hydrogen (deuterium)–carbon complex. Under sufficiently strong illumination, the annihilation rate... (Read more)
- 766. Appl. Phys. A 53, 147 (1991) , “Iron-Aluminum Pairs in Silicon”, S. Greulich-Weber, A. Grger, J. M. Spaeth, H. Overhof.Iron-aluminum pairs in silicon are investigated with conventional and optically detected electron paramagnetic resonance (EPR). For the trigonal and orthorhombic pairs known from previous EPR measurements we found for the first time optical absorption bands by measuring their magnetic circular dichroism of the absorption (MCDA). Direct experimental evidence is presented for the configurational bistability of both pairs by showing that the MCDA of the trigonal configuration can be transformed into that of the orthorhombic configuration by the combined effect of light and temperature. A new trigonal pair was discovered by conventional EPR having the same EPR intensity as the known one. Total energy calculations of various (Fei-Als) pair configurations show that two trigonal (Fei-Als)0 pairs with different Fei-Als separations have almost the same binding energy and should occur with the same probability. Fei + is always on a tetrahedral interstitial site, while Als - is nearest neighbor along <111> in one pair, second nearest neighbor in the other one with one silicon lattice site in between. (Read more)
- 767. Rev. Sci. Instrum. 63, 4251 (1992) , “Saturation recovery electron paramagnetic resonance spectrometer”, Richard W. Quine, Sandra S. Eaton, and Gareth R. EatonA versatile saturation recovery accessory based on a small, special-purpose timing controller and an efficient mix of coaxial and waveguide microwave components has been added to a commercial electron paramagnetic resonance (EPR) spectrometer. The spectrometer was designed for study of the spin... (Read more)
- 768. Rev. Sci. Instrum. 63, 5742 (1992) , “Sensitive electron paramagnetic resonance spectrometer for studying defects in semiconductors”, H. E. Altink, T. Gregorkiewicz, and C. A. J. AmmerlaanThe construction of a state-of-the-art electron paramagnetic resonance spectrometer for application to the studies of defects in semiconductors is described. The spectrometer is of superheterodyne type with low-frequency modulation of the magnetic field and working in dispersion. The use of a... (Read more)
- 769. Phys. Rev. Lett. 68, 1582 (1992) , “Breathing-Mode Relaxation Associated with Electron Emission and Capture Processes of EL2 in GaAs”, G. A. Samara, D. W. Vook, J. F. GibbonsAnalysis of the effects of hydrostatic pressure on the electronic emission and capture properties of the (0/+) and (+/++) deep levels of the EL2 defect in GaAs leads to the following conclusions: (1) Both levels move higher in the band gap with pressure; (2) relatively large inward (outward) lattice... (Read more)
- 770. Phys. Rev. Lett. 69, 1580 (1992) , “Linear Stark and Nonlinear Zeeman Coupling to the Ground State of Effective Mass Acceptors in Silicon”, Andreas Köpf and Kurt LassmannIt is shown by dielectric resonance absorption at 60 GHz that there is a linear coupling of the electric field to the ground state of effective mass acceptors in Si reflecting the lower Td symmetry in the central portion of the ground-state wave function. The coupling increases strongly... (Read more)
- 771. Phys. Rev. Lett. 69, 3185 (1992) , “Paramagnetic State of the Isolated Gold Impurity in Silicon”, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanThe paper reports on the observation of the electron paramagnetic resonance spectrum of the isolated substitutional gold impurity in silicon. The spectrum has orthorhombic I (C2v) symmetry and an effective spin S=1/2. It has been detected in silver-doped samples with gold being introduced... (Read more)
- 772. Phys. Rev. B 45, 11612 (1992) , “Theoretical studies on the core structure of the 450 °C oxygen thermal donors in silicon”, Peter Deák and Lawrence C. Snyder and James W. CorbettResults of molecular- and cyclic-cluster calculations using semiempirical Hamiltonians on a wide range of small oxygen complexes in crystalline silicon are reported. It is shown that a core involving (at most) two oxygens and a self-interstitial can explain the observed behavior of the... (Read more)
- 773. Phys. Rev. B 45, 13745 (1992) , “Validity of the broken-bond model for the DX center in GaAs”, Mineo Saito, Atsushi Oshiyama, Osamu SuginoThe validity of the broken-bond model for the DX center is examined by performing supercell calculations within the local-density approximation for column-IV donors in GaAs. We confirm that the broken-bond geometry is the most stable among the atomic structures accompanied with large lattice... (Read more)
- 774. Phys. Rev. B 45, 1436 (1992) , “EPR identification of the negatively charged vacancy in diamond”, J. Isoya, H. Kanda, Y. Uchida, S. C. Lawson, S. Yamasaki, H. Itoh, Y. MoritaElectron-paramagnetic-resonance and electron-nuclear-double-resonance (ENDOR) methods are used to identify the negatively charged state of the isolated vacancy in electron-irradiated synthetic diamond crystals. The Td symmetry is confirmed by determining the arrangement of both nearest... (Read more)
- 775. Phys. Rev. B 45, 1645 (1992) , “Electron-paramagnetic-resonance observation of gallium vacancy in electron-irradiated p-type GaAs”, Y. Q. Jia, H. J. von Bardeleben, D. Stievenard, C. DelerueWe report an observation by electron paramagnetic resonance (EPR) of the gallium vacancy defect in GaAs. The defect is observed after electron irradiation of p-type GaAs. The gallium vacancy defect shows trigonal symmetry; its spin-Hamiltonian parameters are determined as S=1/2,... (Read more)
- 776. Phys. Rev. B 45, 3279 (1992) , “EPR Investigation of Pt- in Silicon”, F. G. Anderson, R. F. Milligan, G. D. Watkins.Using EPR we have resolved the question of whether the dominant Pt- defect in silicon consists of an isolated platinum ion or a platinum-platinum pair. We have measured the uniaxial-stress-induced shifts in the g values and find that the stress-coupling tensor shows the defect symmetry to... (Read more)
- 777. Phys. Rev. B 45, 3287 (1992) , “Vacancy-Model Interpretation of EPR Spectrum of Si:Pt-”, F. G. Anderson, F. S. Ham, G. D. Watkins.The vacancy model for platinum in silicon as proposed by Watkins postulates a neutral Pt atom in the 5d10 electronic configuration occupying a negatively charged lattice vacancy, so that electronic properties of Pt- should be similar to those of the isolated vacancy... (Read more)
- 778. Phys. Rev. B 45, 3349 (1992) , “Magnetic circular dichroism and optical detection of electron paramagnetic resonance of the SbGa heteroantisite defect in GaAs:Sb”, P. Omling, D. M. Hofmann, M. Kunzer, M. Baeumler, U. KaufmannIn an investigation of GaAs doped with Sb to a concentration of ≊1×1019 cm-3, the electron-paramagnetic-resonance (EPR) signal of the SbGa heteroantisite defect has been optically detected by monitoring the microwave-induced changes in the... (Read more)
- 779. Phys. Rev. B 45, 3372 (1992) , “Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy”, H. J. von Bardeleben, M. O. Manasreh, D. C. Look, K. R. Evans, C. E. StutzElectron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The... (Read more)
- 780. Phys. Rev. B 45, 4122 (1992) , “First-principles study of fully relaxed vacancies in GaAs”, K. Laasonen, R. M. Nieminen, and M. J. PuskaThe structural and electronic properties of vacancies in GaAs have been studied using ab initio molecular dynamics. The atomic structures of vacancies in different charge states have been optimized by using a simulated-annealing procedure. The neighbor-atom relaxations are modest for neutral, singly... (Read more)
- 781. Phys. Rev. B 45, 4344 (1992) , “Dipolar Interaction between [111] Pb Defects at the (111)Si/SiO2 Interface Revealed by Electron-Spin Resonance”, G. Van Gorp, A. Stesmans.A method is outlined to vary reproducibly the density of [111] Pb centers (?Si?Si3 defects with an unpaired sp3 orbital perpendicular to the interface) at the thermal (111)Si/SiO2 interface (grown at ?920 °C; 1.1 atm O2) using alternate non–Iin... (Read more)
- 782. Phys. Rev. B 45, 5699 (1992) , “Optical detection of magnetic resonance in the photoexcited triplet state of a deep center in diamond”, J. Westra, R. Sitters, and M. GlasbeekFrom an optically detected magnetic resonance study of the 2.818-eV zero-phonon emission in brown diamond, direct evidence for the existence of a photoexcited phosphorescent triplet state in diamond has been obtained. The emission is attributed to a deep-center triplet state with spin-Hamiltonian... (Read more)
- 783. Phys. Rev. B 45, 5883 (1992) , “Electron Paramagnetic Resonance of a Platinum Pair Complex in Silicon”, M. Höhne.EPR measurements of hydrogen-treated Si:Pt single crystals reveal a pair of equivalent Pt ions on next-nearest-neighbor sites. The g values and hyperfine parameters differ essentially from those of a previously detected Pt pair center; therefore, an additional constituent in at least one of the... (Read more)
- 784. Phys. Rev. B 45, 5933 (1992) , “Magnetic circular dichroism of the DX center in Al0.35Ga0.65As:Te”, R. E. Peale, Y. Mochizuki, H. Sun, G. D. WatkinsMagneto-optical absorption spectra of 0.4-mm-thick, single-crystal Al0.35Ga0.65As:Te give evidence for two bleachable absorbers, one of which is identified as the DX center. The bleached-state absorption coefficient and magnetic circular dichroism (MCD), measured from 0.66 to... (Read more)
- 785. Phys. Rev. B 45, 9501-9504 (1992) , “New intrinsic defect in as-grown thermal SiO2 on (111)Si”, A. StesmansK-band electron-spin resonance (ESR) has revealed an isotropic signal of g=2.002 46±0.000 03 in as-prepared SiO2 thermally grown on (111)Si in dry O2 at 700–860°C. The spectrum comprises a symmetric central signal of peak-to-peak width ??pp=1.0 G amid a... (Read more)
- 786. Phys. Rev. B 46, 10600 (1992) , “Cross-relaxation dynamics of the N-V center in diamond as studied via optically detected microwave recovery transients”, I. Hiromitsu, J. Westra, M. GlasbeekThe N-V center in diamond is a nitrogen-vacancy pair defect with an electronic triplet spin ground state. Upon optical excitation and in the presence of an applied magnetic field, two subensembles of N-V centers with different spin temperatures are created at liquid-helium temperatures. For certain... (Read more)
- 787. Phys. Rev. B 46, 12266-12277 (1992) , “Measurement of the effect of pretreatment and adsorption on the electrical properties of ZnO powders using a microwave-Hall-effect technique”, Byung-Ki Na, M. Albert Vannice, Arden B. WaltersMicrowave-Hall-effect (MHE) and electrical conductivity measurement techniques can now be used to obtain absolute values of the electrical properties of semiconductor powders under different controlled conditions. A commercial ESR spectrometer was modified to conduct MHE experiments and a network... (Read more)
- 788. Phys. Rev. B 46, 12316 (1992) , “Zero-Field Optical Detection of Magnetic Resonance on a Metastable Sulfur-Pair-Related Defect in Silicon: Evidence for a Cu Constituent”, A. M. Frens, M. T. Bennebroek, J. Schmidt, W. M. Chen, B. Monemar.A metastable complex defect in S-doped silicon has been studied with zero-field optically-detected magnetic-resonance (ODMR) spectroscopy. The defect shows two characteristic photoluminescence (PL) spectra SA and SB, corresponding to two different geometric configurations 1 and... (Read more)
- 789. Phys. Rev. B 46, 12335 (1992) , “Microscopic mechanism of atomic diffusion in Si under pressure ”, Osamu Sugino and Atsushi OshiyamaWe have performed the first-principles total-energy calculations on the atomic diffusion of group-V impurities in Si, and have revealed the pressure effect on the activation energy of the diffusion. For the vacancy mechanism, the activation energies for P, As, and Sb decrease with pressure. For the... (Read more)
- 790. Phys. Rev. B 46, 1882 (1992) , “Charge-State-Dependent Activation Energy for Diffusion of Iron in Silicon”, H. Takahashi, M. Suezawa, and K. SuminoPrecipitation of neutral iron (Fe0) in n-type silicon (Si) and the generation of iron-acceptor pairs controlled by diffusion of positively charged iron (Fe+) in p-type Si are investigated by means of electron spin resonance (ESR). The temperature range in which the diffusion of... (Read more)
- 791. Phys. Rev. B 46, 4312 (1992) , “Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon ”, W. Götz and G. Pensl and W. ZulehnerThermal donors (TDs) are generated in Czochralski (CZ) -grown silicon by heat treatments at temperatures around 470 °C. They form a family of individual species with differing ionization energies and act as double donors (TDx0, TDx+). Up to 11 species are already known. We... (Read more)
- 792. Phys. Rev. B 46, 4544 (1992) , “Electron-Paramagnetic-Resonance Identification of Silver Centers in Silicon”, N. T. Son, V. E. Kustov, T. Gregorkiewicz, and C. A. J. AmmerlaanThe observation of silver in silicon by electron paramagnetic resonance (EPR) is reported. In p-type silicon doped with silver, several EPR spectra were detected. Three of these, which are labeled Si-NL42, Si-NL43, and Si-NL44, exhibit hyperfine structure with splitting into two components of equal... (Read more)
- 793. Phys. Rev. B 46, 4582 (1992) , “Aluminum Incorporation in the Si-NL10 Thermal Donor”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe role of aluminum dopants in the creation and properties of the Si-NL10 center was investigated by means of electron-nuclear-double-resonance techniques. At least 10 different Si-NL10 species were identified, and their generation kinetics were studied in detail. Possible transformation mechanisms... (Read more)
- 794. Phys. Rev. B 46, 5303 (1992) , “Cross-relaxation effects in the 2.818-eV zero-phonon emission in brown diamond”, I. Hiromitsu, J. Westra, and M. GlasbeekIn brown diamond, the long-lived emission at 2.818 eV is known to be due to a localized center in the photoexcited triplet state. In this paper, the emission intensity of the 2.818-eV center is studied as a function of the strength of an externally applied magnetic field. The cross-relaxation (CR)... (Read more)
- 795. Mater. Sci. Forum 83-87, 1165-1170 (1992) , “Spin dependent recombination at deep centers in Si - electrically detected magnetic resonance”, P. Christmann , M. Bernauer , C. Wetzel , A. Asenov , B. K. Meyer , A. Endros
- 796. J. Phys.: Condens. Matter 4, 2651 (1992) , “ENDOR and high-temperature EPR of the N3 centre in natural type Ib diamonds”, J. A. van Wyk, J. H. N. Loubsert, M. E. Newton, J. M. BakerThe N3 is a single paramagnetic electron centre observed in type Ib diamonds. It has monoclinic symmetry below 200 degrees C and becomes axially symmetric at higher temperatures. It displays an unusual hyperfine structure which is shown to be from a single 14N nucleus. The... (Read more)
- 797. J. Phys.: Condens. Matter 4, 8119 (1992) , “ENDOR studies on the N1 di-nitrogen centre in diamond”, A. Cox, M. E. Newton, J. M. BakerNew ENDOR measurements on the N1 centre confirm the N-C-N+ model for the defect. The N+ is in a substitutional site with approximately tetrahedral symmetry. The N-C fragment of the centre resembles the P1 centre, with slightly larger unpaired electron density on the nitrogen,... (Read more)
- 798. J. Opt. Soc. Am. B 9, 768 (1992) , “Origin of persistent hole burning of N-V centers in diamond”, D. Redman, S. Brown, S. C. RandNew satellite features and antiholes in the persistent hole-burning spectrum of N–V centers in diamond, as well as their dependences on applied electric fields and frequency within the inhomogeneous absorption line, are reported. These results, together with reassignments of spin states of this center, permit an understanding of the origin of the satellite holes as well as of possible mechanisms for the persistent hole-burning phenomenon itself. In addition we report narrow optical interference fringes in heterodyne-detected spectra of persistent spectral holes in the N–V defect center in diamond and discuss a recent suggestion for high-resolution Ramsey-fringe hole-burning spectroscopy of solids based on phase-separated fields. (Read more)
- 799. J. Non-Cryst. Solids 149, 137-160 (1992) , “Electron spin resonance characterization of self-trapped holes in amorphous silicon dioxide”, David L. GriscomThe electron spin resonance spectra of radiation-induced self-trapped holes (STHs) in amorphous silicon dioxide are isolated by isochromal annealing experiments and computer simulation analyses. Two distinct components, denoted STH1 and STH2 (plus a third component intermediate between the two),... (Read more)
- 800. J. Lumin. 53, 49 (1992) , “Raman heterodyne studies of the nitrogen-vacancy centre in diamond”, Neil B. Manson, Xing-Fei He and Peter T. H. FiskThe Raman heterodyne detected EPR and NMR frequencies associated with the nitrogen-vacancy centre in diamond are found to be consistent with those for a spin-triplet ground state with the following spin-Hamiltonian parameters g = 2.0028, gn = 0.4036, D = 2.88 GHz, |A||| = 2.3 MHz, |A| = 2.1 MHz and... (Read more)
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