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- 601. Phys. Rev. B 74, 104303 (2006) , “Nitrogen-vacancy center in diamond: Model of the electronic structure and associated dynamics”, N. B. Manson, J. P. Harrison, and M. J. SellarsSymmetry considerations are used in presenting a model of the electronic structure and the associated dynamics of the nitrogen-vacancy center in diamond. The model accounts for the occurrence of optically induced spin polarization, for the change of emission level with spin polarization and for new... (Read more)
- 602. Phys. Rev. B 74, 100201(R) (2006) , “Direct spectroscopic observation of the atomic-scale mechanisms of clustering and homogenization of rare-earth dopant ions in vitreous silica”, Sabyasachi Sen, Rafail Rakhmatullin, Ruslan Gubaidullin, and Andreas PöpplStructural aspects of clustering of rare earth ions in oxide glasses have been studied for the last several years in relation to their applications in photonics. However, the mechanism of homogenization of the spatial distribution of rare earth ions by codoping, typically with Al or P, is still not... (Read more)
- 603. Phys. Rev. B 74, 085201 (2006) , “Hydrogen dynamics and light-induced structural changes in hydrogenated amorphous silicon”, T. A. Abtew and D. A. DraboldWe use accurate first-principles methods to study the network dynamics of hydrogenated amorphous silicon, including the motion of hydrogen. In addition to studies of atomic dynamics in the electronic ground state, we also adopt a simple procedure to track the H dynamics in light-excited states.... (Read more)
- 604. Phys. Rev. B 74, 081201 (2006) , “Design of shallow acceptors in ZnO: First-principles band-structure calculations”, Jingbo Li, Su-Huai Wei, Shu-Shen Li, and Jian-Bai Xiap-type doping is a great challenge for the full utilization of ZnO as short-wavelength optoelectronic material. Due to a large electronegative characteristic of oxygen, the ionization energy of acceptors in ZnO is usually too high. By analyzing the defect wave-function character, we propose... (Read more)
- 605. Phys. Rev. B 74, 075332 (2006) , “Point defects on the (110) surfaces of InP, InAs, and InSb: A comparison with bulk”, A. Höglund, C. W. M. Castleton, M. Göthelid, B. Johansson,, and S. MirbtThe basic properties of point defects, such as local geometries, positions of charge-transfer levels, and formation energies, have been calculated using density-functional theory, both in the bulk and on the (110) surface of InP, InAs, and InSb. Based on these results we discuss the electronic... (Read more)
- 606. Phys. Rev. B 74, 064116 (2006) , “Charge centers in CaF2: Ab initio calculation of elementary physical properties”, M. Letz and L. ParthierCharge centers in ionic crystals provide a channel for elementary interaction between electromagnetic radiation and the lattice. We calculate the electronic ground-state energies which are needed to create a charge centernamely an F center and an H center. In good agreement with... (Read more)
- 607. Phys. Rev. B 74, 064105 (2006) , “Defect formation in LaGa(Mg,Ni)O3–δ: A statistical thermodynamic analysis validated by mixed conductivity and magnetic susceptibility measurements”, E. N. Naumovich, V. V. Kharton, A. A. Yaremchenko, M. V. Patrakeev, D. G. Kellerman, D. I. Logvinovich, and V. L. KozhevnikovA statistical thermodynamic approach to analyze defect thermodynamics in strongly nonideal solid solutions was proposed and validated by a case study focused on the oxygen intercalation processes in mixed-conducting LaGa0.65Mg0.15Ni0.20O3δ... (Read more)
- 608. Phys. Rev. B 74, 054111 (2006) , “EPR investigation of iron-related centers in 57Fe-doped KTaO3”, P. G. Baranov, A. G. Badalyan, D. V. Azamat, V. A. Trepakov, A. P. Bundakova, E. A. Ruzanova, V. S. Vikhnin, H. Hesse, and S. E. KapphanThree dominant iron centers are studied in the as-grown 57Fe-doped single KTaO3 crystals. For each of the centers, which were labeled as rhombic FeTa3+ and two axial Fe-related centers FeK3+-OI and (Fe). The... (Read more)
- 609. Phys. Rev. B 74, 045217 (2006) , “Vacancy clustering and diffusion in silicon: Kinetic lattice Monte Carlo simulations”, Benjamin P. Haley, Keith M. Beardmore, and Niels Grønbech-JensenDiffusion and clustering of lattice vacancies in silicon as a function of temperature, concentration, and interaction range are investigated by kinetic lattice Monte Carlo simulations. It is found that higher temperatures lead to larger clusters with shorter lifetimes on average, which grow by... (Read more)
- 610. Phys. Rev. B 74, 045213 (2006) , “Hyperfine interaction and magnetoresistance in organic semiconductors”, Y. Sheng, T. D. Nguyen, G. Veeraraghavan, Ö. Mermer, M. Wohlgenannt, S. Qiu, and U. ScherfWe explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. We deduce a simple fitting formula from the hyperfine Hamiltonian that relates the saturation field of the OMAR traces to the hyperfine coupling constant. We compare the... (Read more)
- 611. Phys. Rev. B 74, 045211 (2006) , “Auger recombination and biexcitons in Cu2O: A case for dark excitonic matter”, J. I. Jang and J. P. WolfeThe lifetime of excitons in Cu2O decreases significantly at high gas densities. This effect has been attributed to an Auger recombination process between two excitons, resulting in a loss rate given by 1=An, where A is the Auger constant and n... (Read more)
- 612. Phys. Rev. B 74, 045208 (2006) , “Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy”, G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, and M. GrundmannHigh-quality single crystals of ZnO in the as-grown and N+ ion-implanted states have been investigated using a combination of three experimental techniquesnamely, positron lifetime/slow positron implantation spectroscopy accompanied by theoretical calculations of the positron... (Read more)
- 613. Phys. Rev. B 74, 045204 (2006) , “Donor-acceptor pairs in the confined structure of ZnO nanocrystals”, Serguei B. Orlinskii, Hubert Blok, and Jan SchmidtThe electron paramagnetic resonance signal of an exchange-coupled pair consisting of a shallow interstitial Li donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From electron nuclear double resonance experiments it is concluded that the... (Read more)
- 614. Phys. Rev. B 74, 045202 (2006) , “Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors”, Anderson Janotti, David Segev, and Chris G. Van de WalleUsing first-principles methods based on density functional theory within the local density approximation (LDA) we calculate the structural and electronic properties of wurtzite MgO, ZnO, and CdO, and discuss their similarities and dissimilarities with the corresponding Group-III nitrides AlN, GaN,... (Read more)
- 615. Phys. Rev. B 74, 035309 (2006) , “Structure of the interface between ultrathin SiO2 films and 4H-SiC(0001)”, Mark Schürmann, Stefan Dreiner, Ulf Berges, and Carsten WestphalThe interface between ultrathin SiO2 films and 4H-SiC(0001) has been studied by x-ray photoelectron spectroscopy (XPS) and photoelectron diffraction. The investigation was performed for two different films. An ordered silicate layer showed a clear (×)R30°... (Read more)
- 616. Phys. Rev. B 74, 035213 (2006) , “Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique”, Takashi Kita and Osamu WadaWe have studied bound exciton states of isoelectronic centers of nitrogen-doped GaAs by photoluminescence (PL) spectroscopy. The nitrogen doping has been performed in an atomically controlled way using the (3×3) nitrogen stable surface on GaAs(001), which has succeeded in forming a series of... (Read more)
- 617. Phys. Rev. B 74, 035210 (2006) , “Density-functional electronic structure calculations for native defects and Cu impurities in CdS”, Kazume Nishidate, Takuya Sato, Yuta Matsukura, Mamoru Baba, and Masayuki HasegawaWe performed density-functional electronic structure calculations for wurtzite CdS with native defects and Cu impurity. We investigate formation energies and ionization levels of the defects in various charge states. Our results reveal that the S vacancy is a double donor with the strongly localized... (Read more)
- 618. Phys. Rev. B 74, 035208 (2006) , “Ultranarrow photoluminescence transitions of nitrogen cluster bound excitons in dilute GaAsN”, D. Karaiskaj, A. Mascarenhas, M. Adamcyk, E. C. Young, and T. TiedjeHigh resolution photoluminescence spectroscopy on heavily doped GaAs:N reveals the existence of excitons bound to a nitrogen cluster. The observed transitions are exceedingly sharp, similar to those observed for excitons bound to nitrogen pairs in high quality GaAs with the narrowest transition... (Read more)
- 619. Phys. Rev. B 74, 035205 (2006) , “Mechanisms of arsenic clustering in silicon”, F. F. Komarov, O. I. Velichko, V. A. Dobrushkin, and A. M. MironovA model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms... (Read more)
- 620. Phys. Rev. B 74, 035202 (2006) , “Computation of the Stark effect in P impurity states in silicon”, A. Debernardi, A. Baldereschi, and M. FanciulliWe compute within the effective-mass theory and without adjustable parameters the Stark effect for shallow P donors in Si with anisotropic band structure. Valley-orbit coupling is taken into account in a nonperturbative way and scattering effects of the impurity core are included to properly... (Read more)
- 621. Phys. Rev. B 74, 035112 (2006) , “Charge localization or itineracy at LaAlO3/SrTiO3 interfaces: Hole polarons, oxygen vacancies, and mobile electrons”, R. Pentcheva and W. E. PickettWhile correlated electron behavior is to be expected at oxide interfaces (IFs) involving Mott insulators, we show how strong correlations in the oxygen 2p states may be necessary to account for observed insulating behavior at charged (001)-IFs between the band insulators LaAlO3 and... (Read more)
- 622. Phys. Rev. B 74, 033309 (2006) , “Effect of the triplet state on the random telegraph signal in Si n-MOSFETs”, Enrico Prati, Marco Fanciulli, Giorgio Ferrari, and Marco SampietroWe report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude... (Read more)
- 623. Phys. Rev. B 74, 033304 (2006) , “5-7-5 line defects on As/Si(100): A general stress-relief mechanism for V/IV surfaces”, W. E. McMahon, Iskander G. Batyrev, T. Hannappel, J. M. Olson, and S. B. ZhangAn entire family of nano-scale trenches, ridges, and steps has been observed experimentally on AsH3-exposed Si(100). Some of these line structures have been observed previously, but their structures have remained a mystery. Theoretical modeling shows that they are all based upon the same... (Read more)
- 624. Phys. Rev. B 74, 024106 (2006) , “Oxygen-vacancy-related dielectric anomaly in CaCu3Ti4O12: Post-sintering annealing studies”, C. C. Wang and L. W. ZhangThe influence of post-sintering annealing on the dielectric properties of CaCu3Ti4O12 was investigated in the temperature range form 200 to 400 K. A dielectric peak featuring thermally activated Debye-like behavior was observed around 340 K (100 Hz). This peak... (Read more)
- 625. Phys. Rev. B 73, 33201 (2006) , “Manganese on various lattice sites in (Ga,Mn)As investigated using electron paramagnetic resonance”, T. WeiersThe differences between variously doped and grown samples of manganese-doped GaAs have been studied and set in relation to the magnetic and electronic properties of these materials. For interion exchange and contrary to the resolved hyperfine and crystal field contributions from the ionized acceptor... (Read more)
- 626. Phys. Rev. B 73, 245415 (2006) , “Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes”, A. GaliSilicon carbide nanotubes have a great potential for application in chemical sensors in harsh environment or in biological sensors. It is of interest to explore the electronic properties of these nanotubes, and how those are modified in the presence of impurities. It is well known that nitrogen and... (Read more)
- 627. Phys. Rev. B 73, 245211 (2006) , “Hydrogen and muonium in diamond: A path-integral molecular dynamics simulation”, Carlos P. Herrero, Rafael Ramírez, and Eduardo R. HernándezIsolated hydrogen, deuterium, and muonium in diamond have been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 100 to 800 K. Interatomic interactions were modeled by a... (Read more)
- 628. Phys. Rev. B 73, 245210 (2006) , “First-principles investigation of a bistable boron-oxygen interstitial pair in Si”, A. Carvalho, R. Jones, M. Sanati, S. K. Estreicher, J. Coutinho, and P. R. BriddonLocal density functional calculations are used to predict and compare the properties of the two distinct interstitial boron-interstitial oxygen (BiOi) complexes recently reported in the literature. The electronic and free energies, as well as the small... (Read more)
- 629. Phys. Rev. B 73, 245207 (2006) , “Photoionization measurement of deep defects in single-crystalline CVD diamond using the transient-current technique”, J. Isberg, A. Tajani, and D. J. TwitchenWe have adopted the transient-current technique as a sensitive method to detect small concentrations of charged defects in diamond and to study its photoionization spectrum. It is found that ionized impurity concentrations in the interval 1091013 cm3 can... (Read more)
- 630. Phys. Rev. B 73, 245203 (2006) , “Diffusion mechanisms for silicon di-interstitials”, Yaojun A. Du, Richard G. Hennig, and John W. WilkinsTight-binding molecular dynamics and density-functional simulations on silicon seeded with a di-interstitial reveal its detailed diffusion mechanisms. The lowest-energy di-interstitial performs a translation/rotation diffusion-step with a barrier of 0.3 eV and a prefactor of 11 THz followed by a... (Read more)
- 631. Phys. Rev. B 73, 235213 (2006) , “Donor-vacancy complexes in Ge: Cluster and supercell calculations”, J. Coutinho, S. Öberg, V. J. B. Torres, M. Barroso, R. Jones, and P. R. BriddonWe present a comprehensive spin-density functional modeling study of the structural and electronic properties of donor-vacancy complexes (PV, AsV, SbV, and BiV) in Ge crystals. Special attention is paid to spurious results which are related to the choice of the boundary... (Read more)
- 632. Phys. Rev. B 73, 235211 (2006) , “Ab initio calculations for the interconversion of optically active defects in amorphous silica”, M. M. G. Alemany and James R. ChelikowskyUsing ab initio calculations on clusters, we have identified a new reaction path between the dicoordinated silicon atom defect and the paramagnetic Egamma[prime]" align="middle"> center in amorphous silica. Under ionizing irradiation, the dicoordinated silicon atom... (Read more)
- 633. Phys. Rev. B 73, 235209 (2006) , “Temperature dependence of the vibrational spectrum of a Li-OH complex in ZnO: Infrared absorption experiments and theory”, Kevin R. Martin, Philip Blaney, Gang Shi, Michael Stavola, and W. Beall FowlerConsiderable interest has developed in the potential use of IIVI oxides as electronic and optical materials. In several cases, alkali atoms have been suggested as dopants. We report on the theoretical and experimental investigation of infrared and vibrational properties of a Li-OH complex in... (Read more)
- 634. Phys. Rev. B 73, 235206 (2006) , “LSDA+U study of cupric oxide: Electronic structure and native point defects”, Dangxin Wu and Qiming ZhangA first-principles study on strongly correlated monoclinic cupric oxide CuO has been performed by using the LSDA+U method. The optimized structural parameters of the crystal CuO are in good agreement with the experimental data. The electronic structures and magnetic properties calculated from the... (Read more)
- 635. Phys. Rev. B 73, 233204 (2006) , “Point defects in Ce-doped Y3Al5O12 crystal scintillators”, C. L. Wang, D. Solodovnikov, and K. G. LynnDefect properties of Ce-doped and undoped Y3Al5O12 (YAG) crystals were studied by Doppler broadening of positron annihilation rays and thermoluminescence (TL) as a function of temperature (25300 °C). The positron diffusion length L+ was... (Read more)
- 636. Phys. Rev. B 73, 214113 (2006) , “Point-defect recombination efficiency at grain boundaries in irradiated SiC”, Andrea Moriani and Fabrizio CleriWe studied the atomic-scale mechanisms of radiation damage recovery, by molecular dynamics simulations of irradiation cascades in a -SiC model system, containing one general (001) twist grain boundary in the direction approximately perpendicular to the cascade. The (001) grain boundary has a... (Read more)
- 637. Phys. Rev. B 73, 205205 (2006) , “Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1–xNx alloys: A microphotoluminescence study”, P. H. Tan, X. D. Luo, Z. Y. Xu, Y. Zhang, A. Mascarenhas, H. P. Xin, C. W. Tu, and W. K. GeUsing microphotoluminescence (µ-PL), in dilute N GaAs1xNx alloys, we observe a PL band far above the bandgap E0 with its peak energy following the so-called E+ transition, but with contribution from perturbed... (Read more)
- 638. Phys. Rev. B 73, 205203 (2006) , “First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects”, Paul Erhart, Karsten Albe, and Andreas KleinDensity-functional theory (DFT) calculations of intrinsic point defect properties in zinc oxide were performed in order to remedy the influence of finite-size effects and the improper description of the band structure. The generalized gradient approximation (GGA) with empirical self-interaction... (Read more)
- 639. Phys. Rev. B 73, 195209 (2006) , “Electrical activity of the PtH2 complex in silicon: High-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique”, Vl. Kolkovsky, O. Andersen, L. Dobaczewski, A. R. Peaker, and K. Bonde NielsenHigh-resolution Laplace deep-level spectroscopy combined with the uniaxial stress technique has been used to study stress-energy piezospectroscopic tensor components of the platinum-dihydrogen complex in silicon. The effect of stress on the defect has been observed either as the stress-induced... (Read more)
- 640. Phys. Rev. B 73, 195206 (2006) , “Relaxations and bonding mechanism in Hg1–xCdxTe with mercury vacancy defect: First-principles study”, L. Z. Sun, Xiaoshuang Chen, Y. L. Sun, X. H. Zhou, Zh. J. Quan, He Duan, and Wei LuThe structural and electronic properties of the mercury vacancy defect in Hg1xCdxTe have been studied by combining the full-potential linear augmented plane wave and plane-wave pseudopotential method base on the density functional theory. Structural... (Read more)
- 641. Phys. Rev. B 73, 195204 (2006) , “Hydrogen migration in single crystal and polycrystalline zinc oxide”, N. H. NickelHydrogen diffusion in single crystal and polycrystalline zinc oxide was investigated by deuterium diffusion and hydrogen effusion experiments. Deuterium concentration depth profiles were measured as a function of the passivation temperature, while in H effusion experiments the molecular hydrogen... (Read more)
- 642. Phys. Rev. B 73, 193203 (2006) , “Theoretical study of the phosphorus vacancy in ZnGeP2”, Xiaoshu Jiang, M. S. Miao, and Walter R. L. LambrechtFirst-principles calculations are presented for the phosphorus vacancy VP in ZnGeP2, using full-potential linearized muffin-tin orbital supercell local density functional theory calculations. We find the VP to have a high energy of formation compared to... (Read more)
- 643. Phys. Rev. B 73, 193202 (2006) , “First-principles study of point defects in rutile TiO2–x”, Eunae Cho, Seungwu Han, Hyo-Shin Ahn, Kwang-Ryeol Lee, Seong Keun Kim, and Cheol Seong HwangWe report our first-principles results on point defects in TiO2 in the rutile phase. Both the oxygen vacancy and titanium interstitial are considered. The size effect of the supercell has been examined and the localized state associated with the oxygen vacancy turns out to be sensitive to... (Read more)
- 644. Phys. Rev. B 73, 184122 (2006) , “Off-center instability in SrCl2:Fe+: Role of unoccupied 4p orbitals”, P. García-Fernández, J. A. Aramburu, M. T. Barriuso, and M. MorenoRecent electron nuclear double resonance experiments on the Fe(II) center in SrCl2:Fe+ have unambiguously demonstrated that an isolated Fe+ impurity (without any close defect) undergoes a big off-center motion along 001 type directions. As Fe+ in... (Read more)
- 645. Phys. Rev. B 73, 184105 (2006) , “Iron-oxygen vacancy defect association in polycrystalline iron-modified PbZrO3 antiferroelectrics: Multifrequency electron paramagnetic resonance and Newman superposition model analysis”, Hrvoje Metri, Rüdiger-A. Eichel, Klaus-Peter Dinse, Andrew Ozarowski, Johan van Tol, Louis Claude Brunel, Hans Kungl, Michael J. Hoffmann, Kristin A. Schönau, Michael Knapp, and Hartmut FuessBy utilizing multifrequency electron paramagnetic resonance (EPR) spectroscopy, the iron functional center in Fe3+-modified polycrystalline lead zirconate (PbZrO3) was studied. The single phase polycrystalline sample remained orthorhombic and antiferroelectric down to 20 K as... (Read more)
- 646. Phys. Rev. B 73, 174103 (2006) , “Electron-trapping centers and interstitials in chlorinated SrCl2:Fe single crystals”, D. Ghica, S. V. Nistor, E. Goovaerts, D. Schoemaker, H. Vrielinck, and F. CallensElectron-trapped Fe+-type centers, produced by x-ray irradiation at 80 K and further annealing at higher temperatures in iron-doped SrCl2 single crystals grown in chlorine gas, have been investigated by electron paramagnetic resonance. The Fe+(III) and... (Read more)
- 647. Phys. Rev. B 73, 165212 (2006) , “Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques”, Karl Johnston, Martin O. Henry, Deirdre McCabe, Enda McGlynn, Marc Dietrich, Eduardo Alves, and Matthew XiaThe results of photoluminescence measurements on ZnO implanted with stable and radioactive isotopes of Zn and Ga are presented. The donor-related exciton feature I8 at 3.3600 eV is suggested to be due to bound exciton recombination at Ga donors. The I1 line at... (Read more)
- 648. Phys. Rev. B 73, 165209 (2006) , “Vacancy-impurity pairs in relaxed Si1–xGex layers studied by positron annihilation spectroscopy”, M. Rummukainen, J. Slotte, K. Saarinen, H. H. Radamson, J. Hållstedt, and A. Yu. KuznetsovPositron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be... (Read more)
- 649. Phys. Rev. B 73, 165202 (2006) , “Radiation damage in silicon exposed to high-energy protons”, Gordon Davies, Shusaku Hayama, Leonid Murin, Reinhard Krause-Rehberg, Vladimir Bondarenko, Asmita Sengupta, Cinzia Davia, and Anna KarpenkoPhotoluminescence, infrared absorption, positron annihilation, and deep-level transient spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 GeV/c protons in crystalline silicon. The irradiation doses and the concentrations of carbon and oxygen in the samples... (Read more)
- 650. Phys. Rev. B 73, 161201(R) (2006) , “Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models”, A. Mattausch, M. Bockstedte, O. Pankratov, J. W. Steeds, S. Furkert, J. M. Hayes, W. Sullivan, N. G. WrightRecent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C3)Si and the U photoluminescence center in 6H-SiC [Evans et al., Phys. Rev. B 66, 35204... (Read more)
- 651. Phys. Rev. B 73, 134112 (2006) , “EPR g-tensor of paramagnetic centers in yttria-stabilized zirconia from first-principles calculations”, F. Pietrucci, M. Bernasconi, C. Di Valentin, F. Mauri, and C. J. PickardIn order to assign the defect responsible for the experimental electron paramagnetic resonance (EPR) signal with trigonal symmetry (T center), we have studied the properties of different paramagnetic centers in yttria-stabilized cubic zirconia by computing the EPR g-tensor from density... (Read more)
- 652. Phys. Rev. B 73, 125206 (2006) , “Atomistic simulations on the thermal stability of the antisite pair in 3C- and 4H-SiC”, M. Posselt, F. Gao, W. J. WeberThe thermal stability of the first-neighbor antisite pair configurations in 3C- and 4H-SiC is investigated by atomic-level computer simulations. First, the structure and energetics of these defects are determined in order to check the accuracy of the interatomic potential employed. The results are... (Read more)
- 653. Phys. Rev. B 73, 125205 (2006) , “First-principles study of native defects in anatase TiO2”, Sutassana Na-Phattalung, M. F. Smith, Kwiseon Kim, Mao-Hua Du, Su-Huai Wei, S. B. Zhang, and Sukit LimpijumnongNative point defects in anatase TiO2 are investigated by using first-principles pseudopotential calculations based on density-functional theory (DFT). Antisite defects, namely, Ti-antisite (TiO) and O-antisite (OTi), have high formation energies and are hence... (Read more)
- 654. Phys. Rev. B 73, 125204 (2006) , “Optically detected magnetic resonance studies of point defects in Ga(Al)NAs”, I. P. Vorona, T.Mchedlidze, D. Dagnelund, I. A. Buyanova, W. M. Chen, K. KöhlerAn optically detected magnetic resonance (ODMR) study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates is presented. A number of grown-in defects were observed which act as nonradiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian... (Read more)
- 655. Phys. Rev. B 73, 125203 (2006) , “Origin of brown coloration in diamond”, L. S. Hounsome, R. Jones, P. M. Martineau, D. Fisher, M. J. Shaw, P. R. Briddon, and S. ÖbergMeasurements of the absorption spectra of brown natural type IIa diamond as well as brown nitrogen-doped CVD diamond are reported. These are largely featureless and increase almost monotonically from about 15.5 eV. It is argued that the brown coloration is due to an extended defect and not to... (Read more)
- 656. Phys. Rev. B 73, 121306 (2006) , “Resistively detected NMR in a two-dimensional electron system near mu = 1: Clues to the origin of the dispersive lineshape”, L. A. Tracy, J. P. Eisenstein, L. N. Pfeiffer, and K. W. WestResistively detected nuclear magnetic resonance (NMR) measurements on 2D electron systems near the =1 quantum Hall state are reported. In contrast to recent results of Gervais et al. [Phys. Rev. Lett. 94, 196803 (2005)], a dispersive line shape is found at all radio-frequency powers studied... (Read more)
- 657. Phys. Rev. B 73, 115208 (2006) , “Evidence for a trigonal dimer of antibonding hydrogen in crystalline silicon”, R. N. Pereira and B. Bech NielsenThe infrared absorption spectra recorded on silicon crystals implanted with protons at cryogenic temperatures reveal three lines at 812, 1608, and 1791 cm1, which originate from the excitation of local vibrational modes of a H defect. Measurements carried out on crystals subjected... (Read more)
- 658. Phys. Rev. B 73, 115207 (2006) , “First-principles study of migration mechanisms and diffusion of oxygen in zinc oxide”, Paul Erhart and Karsten AlbeWe have performed density-functional theory calculations in conjunction with the climbing image nudged elastic band method in order to study the self-diffusion of oxygen in zinc oxide. To this end, we have derived the complete set of migration paths for vacancies as well as interstitials in wurtzite... (Read more)
- 659. Phys. Rev. B 73, 115204 (2006) , “Platelets and the 110a0/4 {001} stacking fault in diamond”, J. P. Goss, P. R. Briddon, R. Jones, M. I. HeggieElectron microscopy reveals the presence of {001} platelets in annealed, nitrogen containing diamond. These extended planar defects give rise to a large displacement of the surrounding material, are correlated with luminescence and optical absorption, and are characterized by the B... (Read more)
- 660. Phys. Rev. B 73, 115203 (2006) , “Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica”, S. Agnello and L. NuccioThe effects of isochronal thermal treatments on three -irradiation-induced point defects, named the E, ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO2). ODC(II) is investigated by means of photoluminescence spectroscopy,... (Read more)
- 661. Phys. Rev. B 73, 115202 (2006) , “Annealing of electron-, proton-, and ion-produced vacancies in Si”, S. Dannefaer, V. Avalos, D. Kerr, R. Poirier, V. Shmarovoz, and S. H. ZhangPositron lifetime and Doppler measurements were performed on float-zone-refined and variously doped Czochralski-grown Si. The samples were irradiated by various particles (e, p, Kr) with energies between 2 MeV and 245 MeV. Electron or proton irradiation gave rise to... (Read more)
- 662. Phys. Rev. B 73, 113202 (2006) , “Demonstration of the effect of uniaxial stress on the electronic structure of bond-centered muonium in Si”, K. H. Chow, B. Hitti, and J. S. LordWe demonstrate that compressive uniaxial stress modifies the electronic structure of bond-centered muonium (MuBC0" align="middle">) in Si. The stress was applied along the 100 direction of the sample and results in a significant change in the hyperfine parameters of... (Read more)
- 663. Phys. Rev. B 73, 085204 (2006) , “Theory of boron aggregates in diamond: First-principles calculations”, J. P. Goss and P. R. BriddonIt is well known that nitrogen forms aggregates in diamond. However, little is known regarding aggregation of boron, an impurity that can be incorporated in very high concentrations. In this paper we present the results of first-principles calculations regarding the structure and properties of... (Read more)
- 664. Phys. Rev. B 73, 081203(R) (2006) , “Muonium in InSb: Shallow acceptor versus deep trap or recombination center”, V. G. Storchak, D. G. Eshchenko, J. H. Brewer, S. P. Cottrell, and R. L. LichtiThe bound state of a muonium atom has been detected in both n-type and p-type InSb using a high-field µSR technique. The hyperfine constant obtained for this isotropic center (AT=2464±1 MHz), roughly half that of a Mu atom in vacuum, is... (Read more)
- 665. Phys. Rev. B 73, 075201 (2006) , “Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC”, N. T. Son, A. Henry, J. Isoya, M. Katagiri, T. Umeda, A. Gali, E. JanzénContinuous-wave (cw) electron paramagnetic resonance (EPR) at both X-band and W-band frequencies, pulsed-EPR, and pulsed electron nuclear double resonance (ENDOR) were used to study phosphorus shallow donors in 3C-, 4H-, and 6H-SiC doped with phosphorus (P) during... (Read more)
- 666. Phys. Rev. B 73, 073302 (2006) , “Origin of Pb1 center at SiO2/Si(100) interface: First-principles calculations”, K. Kato, T. Yamasaki, T. UdaBased on first-principles calculations, we studied the generation behavior of Pb centers at SiO2/Si interfaces, especially for Pb1 centers, under oxidation of Si(100) surfaces. Pb1 centers were found to be formed... (Read more)
- 667. Phys. Rev. B 73, 045208 (2006) , “Characterization of Eδ and triplet point defects in oxygen-deficient amorphous silicon dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of γ-ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (Eγ, Eδ, and triplet) and one... (Read more)
- 668. Phys. Rev. B 73, 033204 (2006) , “Electrical characterization of metastable carbon clusters in SiC: A theoretical study”, A. Gali, N. T. Son, E. JanznFirst-principles calculations carried out in 3C- and 4H-SiC show that small metastable carbon clusters can be created in irradiated SiC. The metastable carbon clusters possess occupation levels in the p-type as well as in the n-type 4H-SiC. Depending on the... (Read more)
- 669. Phys. Rev. B 73, 024117 (2006) , “Defect properties and p-type doping efficiency in phosphorus-doped ZnO”, Woo-Jin Lee, Joongoo Kang, and K. J. ChangBased on first-principles pseudopotential calculations, we investigated the electronic structure of various P-related defects in ZnO and the p-type doping efficiency for two forms of P dopant sources such as P2O5 and Zn3P2. As compared to N dopants,... (Read more)
- 670. Phys. Rev. B 73, 014111 (2006) , “Structure of SiO2/4H-SiC interface probed by positron annihilation spectroscopy”, M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Miyashita, R. Suzuki, T. OhdairaThe structure of the SiO2/4H-SiC interface produced by dry oxidation has been studied using positron annihilation spectroscopy using energy-variable slow positron beams. Based on the Doppler broadening shape and wing parameter (S-W) correlation, the interface layer was... (Read more)
- 671. Phys. Rev. Lett. 97, 256603 (2006) , “Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance”, Kazuhiro Marumoto, Shin-ichi Kuroda, Taishi Takenobu,, and Yoshihiro IwasaAn electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to... (Read more)
- 672. Phys. Rev. Lett. 97, 256602 (2006) , “Bistability-Mediated Carrier Recombination at Light-Induced Boron-Oxygen Complexes in Silicon”, Mao-Hua Du, Howard M. Branz, Richard S. Crandall, and S. B. ZhangA first-principles study of the BO2 complex in B-doped Czochralski Si reveals a defect-bistability-mediated carrier recombination mechanism, which contrasts with the standard fixed-level Shockley-Read-Hall model of recombination. An O2 dimer distant from B causes only weak... (Read more)
- 673. Phys. Rev. Lett. 97, 255902 (2006) , “Atomistic Mechanism of Boron Diffusion in Silicon”, Davide De Salvador, Enrico Napolitani, Salvatore Mirabella, Gabriele Bisognin, Giuliana Impellizzeri, Alberto Carnera, and Francesco PrioloB diffuses in crystalline Si by reacting with a Si self-interstitial (I) with a frequency g and so forming a fast migrating BI complex that can migrate for an average length λ. We experimentally demonstrate that both g and λ strongly depend on the free hole... (Read more)
- 674. Phys. Rev. Lett. 97, 227401 (2006) , “Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States”, A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. HallerWe resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine... (Read more)
- 675. Phys. Rev. Lett. 97, 226401 (2006) , “Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)”, Magnus Hedström, Arno Schindlmayr, Günther Schwarz, and Matthias SchefflerWe propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at... (Read more)
- 676. Phys. Rev. Lett. 97, 176404 (2006) , “Stark Tuning of Donor Electron Spins in Silicon”, F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, and S. A. LyonWe report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the... (Read more)
- 677. Phys. Rev. Lett. 97, 166803 (2006) , “Electronic Structure of Defect States in Hydroxylated and Reduced Rutile TiO2(110) Surfaces”, Cristiana Di Valentin, Gianfranco Pacchioni, and Annabella SelloniIt has been experimentally observed that a bridging oxygen vacancy on the rutile TiO2(110) surface introduces localized Ti3+ 3d1 states about 1 eV below the conduction band which are not removed upon dissociation of a water molecule and formation of a pair of... (Read more)
- 678. Phys. Rev. Lett. 97, 166402 (2006) , “Phosphorus Donors in Highly Strained Silicon”, Hans Huebl, Andre R. Stegner, Martin Stutzmann, Martin S. Brandt, Guenther Vogg, Frank Bensch, Eva Rauls, and Uwe GerstmannThe hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si1-xGex substrates with x0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT... (Read more)
- 679. Phys. Rev. Lett. 97, 155901 (2006) , “Proton Diffusion Mechanism in Amorphous SiO2”, Julien Godet and Alfredo PasquarelloWe study proton diffusion in amorphous SiO2 from the atomic scale to the long-range percolative regime. Ab initio molecular dynamics suggest that the dominant atomic process consists in cross-ring interoxygen hopping assisted by network vibrations. A statistical analysis accounting... (Read more)
- 680. Phys. Rev. Lett. 97, 137206 (2006) , “Electron Spin Resonance of Proton-Irradiated Graphite”, Kyu Won Lee and Cheol Eui LeeIn the case of colossal magnetoresistance in the perovskite manganites, "double exchange" mediated by the itinerant spins is believed to play a key role in the ferromagnetism. In contrast, the conventional "Heisenberg" interaction, i.e., direct (unmediated) interaction between... (Read more)
- 681. Phys. Rev. Lett. 97, 135901 (2006) , “Vacancy-Assisted Diffusion in Silicon: A Three-Temperature-Regime Model”, Damien Caliste and Pascal PochetIn this Letter we report kinetic lattice Monte Carlo simulations of vacancy-assisted diffusion in silicon. We show that the observed temperature dependence for vacancy migration energy is explained by the existence of three diffusion regimes for divacancies. This characteristic has been rationalized... (Read more)
- 682. Phys. Rev. Lett. 97, 135502 (2006) , “29Si Hyperfine Structure of the Eα Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report a study by electron paramagnetic resonance on the Eα point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on γ-ray irradiated oxygen-deficient materials and pointed out that the 29Si... (Read more)
- 683. Phys. Rev. Lett. 97, 116101 (2006) , “Oxygen Migration, Agglomeration, and Trapping: Key Factors for the Morphology of the Si-SiO2 Interface”, L. Tsetseris and S. T. PantelidesThe measured activation energies for oxide growth rates at the initial and late stages of oxidation of Si are 2 and 1.2 eV, respectively. These values imply that oxidation can proceed at temperatures much smaller than the 800 °C normally used to obtain devices with exceptionally smooth... (Read more)
- 684. Phys. Rev. Lett. 97, 106802 (2006) , “Role of Pr Segregation in Acceptor-State Formation at ZnO Grain Boundaries”, Yukio Sato, James P. Buban, Teruyasu Mizoguchi, Naoya Shibata, Masatada Yodogawa, Takahisa Yamamoto, and Yuichi IkuharaThe role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to... (Read more)
- 685. Phys. Rev. Lett. 97, 106402 (2006) , “E Center in Silicon Has a Donor Level in the Band Gap”, A. Nylandsted Larsen, A. Mesli, K. Bonde Nielsen, H. Kortegaard Nielsen, L. Dobaczewski, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergIt has been an accepted fact for more than 40 years that the E center in Si (the group-V impurityvacancy pair)one of the most studied defects in semiconductorshas only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction... (Read more)
- 686. Phys. Rev. Lett. 97, 087601 (2006) , “Polarization and Readout of Coupled Single Spins in Diamond”, R. Hanson, F. M. Mendoza, R. J. Epstein, and D. D. AwschalomWe study the coupling of a single nitrogen-vacancy center in diamond to a nearby single nitrogen defect at room temperature. The magnetic dipolar coupling leads to a splitting in the electron spin resonance frequency of the nitrogen-vacancy center, allowing readout of the state of a single nitrogen... (Read more)
- 687. Phys. Rev. Lett. 97, 066602 (2006) , “Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well”, Junya Matsunami, Mitsuaki Ooya, and Tohru OkamotoThe resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the... (Read more)
- 688. Phys. Rev. Lett. 97, 066101 (2006) , “Structure and Interconversion of Oxygen-Vacancy-Related Defects on Amorphous Silica”, Chin-Lung Kuo and Gyeong S. HwangAtomic structure and structural stability of neutral oxygen vacancies on amorphous silica are investigated using combined Monte Carlo and density functional calculations. We find that, unlike their bulk counterparts, the Si-Si dimer configuration of surface oxygen vacancies is likely to be unstable... (Read more)
- 689. Phys. Rev. Lett. 97, 016102 (2006) , “Scaling and Universality of Roughening in Thermal Oxidation of Si(001)”, Hiroo Omi, Hiroyuki Kageshima, and Masashi UematsuBy analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 °C in an Ar atmosphere containing a small fraction of O2. We also show... (Read more)
- 690. Phys. Rev. Lett. 96, 55501 (2006) , “Divacancy in 4H-SiC”, N. T. Son, P. Carlsson, J. ul Hassan, E. Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, H. ItohElectron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground... (Read more)
- 691. Phys. Rev. Lett. 96, 205504 (2006) , “First-Principles Study of the Diffusion of Hydrogen in ZnO”, M. G. Wardle, J. P. Goss, and P. R. BriddonZinc oxide, a wide-gap semiconductor, typically exhibits n-type conductivity even when nominally undoped. The nature of the donor is contentious, but hydrogen is a prime candidate. We present ab initio calculations of the migration barrier for H, yielding a barrier of less than ~0.5 ... (Read more)
- 692. Phys. Rev. Lett. 96, 196402 (2006) , “Nitrogen Vacancies as Major Point Defects in Gallium Nitride”, M. G. Ganchenkova and R. M. NieminenWe present results of ab initio calculations for vacancies and divacancies in GaN. Particular attention is paid to nitrogen vacancies and mixed Ga-N divacancies in negatively charged states, which in n-type GaN are found to be energetically comparable with gallium vacancies. We also... (Read more)
- 693. Phys. Rev. Lett. 96, 17203 (2006) , “Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co”, P. Sati, R. Hayn, R. Kuzian, S. Régnier, S. Schäfer, A. Stepanov, C. Morhain, C. Deparis, M. Laügt, M. Goiran, and Z. GolackiWe report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.0030.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in... (Read more)
- 694. Phys. Rev. Lett. 96, 145501 (2006) , “Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC”, T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. BockstedteThe metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. (Read more)SiC| ENDOR EPR Theory electron-irradiation optical-spectroscopy thermal-meas./anneal-exp.| -1 -2 1.0eV~ 13C 29Si C1h C3v Carbon Csi EI5/6 HEI1 HEI5/6 Nitrogen P6/7 SI5 Silicon Vc antisite bistable/metastable dangling-bond n-type pair(=2) semi-insulating vacancy .inp files: SiC/SI5_C1h SiC/SI5_80K SiC/SI5_100K | last update: Takashi Fukushima
- 695. Phys. Rev. Lett. 96, 035505 (2006) , “Mutual Passivation of Donors and Isovalent Nitrogen in GaAs”, Jingbo Li, Pierre Carrier, Su-Huai Wei, Shu-Shen Li, and Jian-Bai XiaWe study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, SiGa, GeGa, SAs, and SeAs, bind to N in GaAs:N, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such... (Read more)
- 696. Physica B 376-377, 486 (2006) , “Preferential substitution of Fe on physically equivalent Ga sites in GaN”, W. Gehlhoff, D. Azamat, U. Haboeck, A. HoffmannThe EPR spectra of Fe3+ in high-quality thick freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with numerous lines of different intensities provided by three different defects is observed for these nearly stress-free iron-doped samples.... (Read more)
- 697. Physica B 376-377, 358-361 (2006) , “Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC”, J. Isoya, M. Katagiri, T. Umeda, S. Koizumi, H. Kanda, N. T. Son, A. Henry, A. Gali, E. JanzénPhosphorus shallow donors having the symmetry lower than Td are studied by pulsed EPR. In diamond:P and 3C–SiC:P, the symmetry is lowered to D2d and the density of the donor wave function on the phosphorus atom exhibits a predominant p-character. In 4H–SiC:P with the site symmetry of... (Read more)
- 698. Physica B 376-377, 177 (2006) , Elsevier , “Micro-characterisation of Si wafers by high-pressure thermopower technique”, S.V. Ovsyannikov, V.V. Shchennikov Jr, N.A. Shaydarova, V. V. Shchennikov, A. Misiuk, D. Yang, I.V. Antonova, S.N. ShaminIn the present work a set of Czochralski-grown silicon wafers (Cz–Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region (0-20GPa). The shifts were observed in pressure of semiconductor–metal phase transition Pt determined from the S(P) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen cO (which is always present in Cz–Si) on the other hand. The dependence exhibited a maximum of Pt near cO~9×1017cm-3. (Read more)
- 699. Physica B 373, 182-193 (2006) , “Electron–nuclear double resonance and dynamic nuclear polarization in GaAs in the regime of the quantum Hall effect”, E. Olshanetsky, J.D. Caldwell, A.E. Kovalev, C.R. Bowers, J.A. Simmons , J.L. RenoElectron spin resonance (ESR) and electron-nuclear double resonance experiments were performed in the 2D electron systems of GaAs/AlxGa1−xAs quantum well and heterojunction samples in the vicinity of the unity filling factor in the regime of the quantum Hall effect. As is well known, the ESR... (Read more)
- 700. Superlatt. Microstruct. 39, 247-256 (2006) , “Optical and morphological features of bulk and homoepitaxial ZnO”, R. Yakimova, G.R. Yazdi, N.T. Son, I. Ivanov, M. Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov , B. SvenssonZnO substrate crystals from two different sources, and epitaxial layers have been studied by SEM, AFM, photoluminescence and EPR. Although fabricated by the same growth principle, i.e. the hydrothermal technique, the substrates differ in terms of purity and structural quality. In the PL spectra of... (Read more)
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