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- 501. Phys. Rev. B 34, 3610-3619 (1986) , “Dipolar interactions between dangling bonds at the (111) Si-SiO2 interface”, K. L. Brower, T. J. HeadleyIn this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
- 502. Phys. Rev. B 34, 4511 (1986) , “Spin Delocalization of Interstitial Iron in Silicon”, D. A. van Wezep, T. Gregorkiewicz, E. G. Sieverts, and C. A. J. AmmerlaanThe apparent contradiction between a covalently delocalized picture of the Si:Fei0 system, suggested among others by the large reduction of the central nucleus hyperfine interaction parameter as compared to the free ion, and the localized picture as has emerged from the... (Read more)
- 503. Phys. Rev. B 34, 7192 (1986) , “Identification of a defect in a semiconductor: EL2 in GaAs”, H. J. von Bardeleben, D. Stiévenard, D. Deresmes, A. Huber, J. C. BourgoinWe present here a complete set of experimental results, obtained by electron paramagnetic resonance (EPR) and deep-level transient spectroscopy (DLTS), on the so-called EL2 defect in GaAs. It is obtained on semi-insulating materials and specially doped materials grown as semi-insulating ones, which... (Read more)
- 504. Phys. Rev. B 34, 7524-7533 (1986) , “Fundamental radiation-induced defect centers in synthetic fused silicas: Atomic chlorine, delocalized E' centers, and a triplet state”, D. L. Griscom and E. J. FriebeleA series of synthetic fused silicas of diverse OH contents was subjected to 100-keV x irradiations at 77 K and investigated by electron-spin-resonance techniques at ?110 K or higher temperatures. Spectra were recorded at X-band frequencies (?9.2–9.3 GHz) both as the first derivative of absorption... (Read more)
- 505. Phys. Lett. A 118, 347 (1986) , “An EPR study of a new C2 symmetry defect in neutron-irradiated silicon”, E. Wu, J. C. Mao, S. X. Wu, M. X. Yan, G. G. Qin.A new defect, labeled Si-PK4, has been observed with EPR in neutron-irradiated FZ-silicon grown in argon. Its g tensor reveals that Si-PK4 has monoclinic-II symmetry (C2 point group) with one symmetry axis pointing to 100. According to the empirical classification of g... (Read more)
- 506. JETP Lett. 43, 255 (1986) , “Combined Resonance at Dislocations in Silicon”, V. V. Kveder, V. Ya. Kravchenko, T. R. Mchedlidze, Yu. A. Osipyan, D. E. Khmelnitski?, A. I. Shalynin.A combined resonance corresponding to transitions between Zeeman levels of electrons trapped in a one-dimensional dislocation band has been observed in plastically deformed silicon. The electrons are trapped by virtue of their motion along a dislocation under the influence of an rf electric field. (Read more)
- 507. J. Phys. C: Solid State Phys. 18, L795 (1986) , “0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time”, K Thonke, A Hangleiter, J Wagner and R SauerHighly excited states of the 0.79 eV luminescent defect observed in photoluminescence excitation (PLE) measurements are interpreted as effective-mass (EMT) states of a pseudo-donor with Ei=38.3 meV. The interpretation implies that the 1s ground state of the donor electron is fivefold... (Read more)
- 508. J. Phys. C: Solid State Phys. 19, 6211 (1986) , “Charge-trapping properties of germanium in crystalline quartz”, W Hayes and T J L JenkinGermanium impurity in alpha -quartz as a well known deep electron trap and hence makes possible the study of hole trapping processes by EPR techniques. The authors have carried out an EPR study of SiO2:Ge X-irradiated in a microwave cavity at 4K and show that Ge is an amphoteric impurity... (Read more)
- 509. J. Phys. C: Solid State Phys. 19, 6417 (1986) , “EPR of defects in silicon-on-insulator structures formed by ion implantation. I. O+ implantation”, R. C. Barklie, A. Hobbs, P. L. F. Hemment, K. Reeson.EPR measurements at X band and room temperature have been made of defects produced by implanting (100) and (111) silicon wafers with doses >1018 O- cm-2 using 300 keV O- and 400 keV O2+ ions and an implantation temperature of... (Read more)
- 510. J. Phys. C: Solid State Phys. 19, 841 (1986) , “Carbon-related radiation damage centres in Czochralski silicon”, G Davies, A S Oates, R C Newman, R Woolley, E C Lightowlers, M J Binns and J G WilkesWe show that the intensity of the 790 meV electronic absorption line and the C(3) vibrational line at 865 cm-1 correlate in Czochralski (CZ) silicon regardless of carbon concentrations, radiation doses and stages of annealing. Three weak vibrational lines at 529, 550 and 742... (Read more)
- 511. J. Appl. Phys. 59, 3255-3266 (1986) , “Thermodynamic and Kinetic Considerations on the Equilibrium Shape for Thermally Induced Microdefects in Czochralski Silicon”, W. A. Tiller, S. Hahn, F. A. Ponce.Using thermodynamic and kinetic considerations, we explain the quasiequilibrium, morphological, and structural characteristics of thermally induced oxide precipitates in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon/silica interface is used to explain the... (Read more)
- 512. Appl. Phys. Lett. 48, 1000 (1986) , “Configurationally multistable defect in silicon”, A. Chantre and L. C. KimerlingWe report the isolation of a new defect in n-type silicon following room-temperature electron irradiation. Using deep level transient spectroscopy (DLTS) combined with minority-carrier injection at 250 K, we show that the DLTS peak usually ascribed to the phosphorus-vacancy pair hides a... (Read more)
- 513. Appl. Phys. Lett. 48, 1270 (1986) , “Capture and emission kinetics of individual Si:SiO2 interface states ”, M. J. Kirton and M. J. UrenBy studying the random telegraph signals in the drain current of small area metal-oxide-semiconductor field-effect transistors as a function of temperature, we show that carrier capture into individual interface states takes place via a multiphonon process. We demonstrate that the interface trap... (Read more)
- 514. Appl. Phys. Lett. 48, 1282 (1986) , “Photoresponse of the EL2 absorption in undoped semi-insulating GaAs”, B. Dischler, F. Fuchs, and U. KaufmannThe response of the EL2 absorption band to monochromatic secondary illumination has been studied in undoped semi-insulating GaAs. Photoinduced changes of the absorption band are spectrally nonuniform. In... (Read more)
- 515. Appl. Phys. Lett. 48, 972-974 (1986) , “Electron spin resonance of [1-11], [-111], and [11-1] oriented dangling orbital Pb0 defects at the (111) Si/SiO2 interface”, A. StesmansThe observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0SiSi3) with dangling bonds positioned along [11], [11], and [11] from low-temperature (T30 K) electron spin resonance measurements is reported. This is connected with... (Read more)
- 516. Appl. Phys. Lett. 49, 348-350 (1986) , “Interface traps and Pb centers in oxidized (100) silicon wafers”, G. J. Gerardi, E. H. Poindexter, P. J. Caplan, N. M. JohnsonThe band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0,... (Read more)
- 517. Appl. Catalysis 21, 133-147 (1986) , “Investigation on the state of copper in copper-zinc oxide biphasic catalyst by EPR and adsorption microcalorimetry”, E. Giamello, B. Fubini and P. LauroBinary Cu---ZnO catalysts active for methanol synthesis and the CO shift reaction were studied by EPR and by adsorption calorimetry. The EPR spectrum of Cu(II) in the calcined catalyst (CuO---ZnO) was studied, and also its evolution on reduction of the calcined into the reduced form... (Read more)
- 518. Deep Centers in Semiconductors 399 (1986) , ed. by S. T. Pantelides, Gordon and Breach, New York. , “The Mid-Gap Donor Level EL2 in Gallium Arsenide”, G. M. Martin, S. Makram-Ebeid
- 519. Sov. Phys. Semicond. 21, 29 (1987) , “Vacancy-Impurity Defect with Spatially Separated Components in Electron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich, B. P. Kashnikov.The ESR metod was used to study heavily doped n-type silicon (dopant concentrarions up to 2×1018 cm-3) irradiated with large doses of 1 MeV electrons. The G16 spectrum dominated the results obtained. A superhyperfine structure (SHFS) was observed in the spectrum: it corresponded to the hyperfine interaction of a paramagnetic electron with nuclei of the 29Si silicon isotope which were located in four shells. A numerical analysis of the spectra yielded the SHFS line intensities and the numbers of equivalent sites in the shells: three sites in the first shell, one in the second, two in the third, and five or six in the fourth. A study of the G16 spectrum under unaxial compression conditions at temperatures 150-500 K revealed two activation energies (EA1 ≈ 0.25, EA2 ≈ 1.4 eV ) representing the process of reorientation of the investigated defect. The results obtained were used to propose a model of the G16 center. This was a vacancy-impurity complex in which the vacancy was localized in the second coordination sphere relative to the impurity atom. The mechanism resulting in a spatial separation of the components in this defect was considered. It was assumed that the impurity atom occuring in the G16 center was carbon.
- 520. Sov. Phys. JETP 66, 838 (1987) , “Combined Electron Resonance in a One-Dimensional Dislocation Band”, V. V. Kveder, T. R. Mchedlidze, Yu. A. Osipyan, A. I. Shalynin.The intensity and width of the combined electron resonance line for dislocations in silicon are investigated as functions of temperature, microwave electric field, and illumination. the resonance intensity grows as T-2.4 with decreasing temperature; this indicates that the electron mobility increases, and hence that band conduction rather than hoppimg along dislocations is the primary conduction mechanism. The energy of the dislocation band is found, and the saturation and width of the line are discussed
- 521. Solid State Commun. 61, 199 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun and Qin Guo-gangA new defect, labled as Si-PK1, has been observed with EPR (Electron Paramagnetic Resonance) in neutron irradiated FZ-Si grown in argon, hydrogen and vacuum. Its symmetry has been determined to be triclinic symmetry, the lowest possible symmetry. Si-PK1 has not been observed in CZ-Si. It is not related to any common impurities in Si, like oxygen, carbon, phosphorus and boron, and it should be an intrinsic defect. Combining with the empirical classification of g tensor, it is concluded that Si-PK1 may be a multi-vacancy cluster.
- 522. Solid State Commun. 61, 199-202 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun, Qin Guo-gang
- 523. Solid State Commun. 64, 1489 (1987) , “Electron Paramagnetic Resonance of an Fe-Fe Pair in Silicon”, J. J. van Kooten, E. G. Sieverts and C. A. J. AmmerlaanThe electron paramagnetic resonance spectrum Si-NL24, which is associated with an iron-iron impurity pair and was earlier observed in electron-irradiated silicon, was produced as a quenched-in defect spectrum. Contrary to previous work we could resolve the complete angular dependence of the spectrum... (Read more)
- 524. Semicond. Sci. Technol. 2, 1 (1987) , “A new model of deep donor centres in AlxGa1-xAs”, J. C. M. Henning, J. P. M. AnsemsSpectroscopic investigations of Si-doped AlxGa1-xAs reveal that the deep donor ('DX centre') exhibits an electron-phonon interaction of moderate strength. The Huang-Rhys factor turns out to be 0.5 and the dominant coupling is with the LO1 phonons. These data lead to... (Read more)
- 525. Physica B+C 146, 176-186 (1987) , “Lattice relaxations at substitutional impurities in semiconductors”, Matthias SchefflerThe positions of the crystal nuclei in the surrounding of substitutional impurities in Si and GaAs have been calculated using density-functional theory together with the local-density approximation for exchange and correlation and the total-energy gradient approach. These investigations give a... (Read more)
- 526. Phys. Rev. Lett. 58, 1448 (1987) , “Selective Generation of Oriented Defects in Glasses: Application to SiO2”, J. H. StathisThe use of polarized light to generate oriented paramagnetic centers in glass is discussed. Analytic expressions are derived for the resultant EPR lineshape, and are compared to experimental results obtained for a-SiO2. Analysis of the EPR anisotropy provides information concerning the... (Read more)
- 527. Phys. Rev. Lett. 59, 1702 (1987) , “Oxygen Incorporation in Thermal-Donor Centers in Silicon”, T. Gregorkiewicz, D. A. van Wezep, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe paper presents for the first time microscopic evidence for the presence of oxygen in thermal donor centers in silicon. The evidence as obtained by electron nuclear double resonance on the magnetic isotope 17O is conclusive. (Read more)
- 528. Phys. Rev. Lett. 59, 240 (1987) , “Electronic Structure of the Neutral Manganese Acceptor in Gallium Arsenide”, J. Schneider, U. Kaufmann, W. Wilkening, M. Baeumler, F. KöhlA new maganese-related isotropic electron-spin-resonance signal at g=2.77 has been observed in GaAs. It is shown to arise from the neutral Mn acceptor, Mn0. The analysis gives an answer to the longstanding question of whether the structure of Mn0 correponds to the... (Read more)
- 529. Phys. Rev. Lett. 60, 2183 (1987) , “Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2?”, Jaroslaw Dabrowski, Matthias SchefflerWe performed parameter-free, self-consistent calculations of the electronic structures, total energies, and forces of the As antisite, of an As-interstitial-Ga-vacancy defect pair, and of various configurations between these limits. The total-energy surface exhibits an interesting metastability. The... (Read more)
- 530. Phys. Rev. B 35, 1566 (1987) , “Vacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements”, M. Sprenger, S. H. Muller, E. G. Sieverts, and C. A. J. AmmerlaanThe isolated vacancy in silicon has been studied with magnetic resonance spectroscopy. The EPR spectrum labeled Si-G2, identified as arising from the negative charge state of the vacancy, has been investigated by electron-nuclear double resonance. Hyperfine interactions between the unpaired defect... (Read more)
- 531. Phys. Rev. B 35, 1582 (1987) , “Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon”, M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanIn electron-irradiated boron-doped silicon the electron paramagnetic resonance spectrum Si-G10 has been studied. Earlier this spectrum had tentatively been identified with a boron-vacancy complex in a next-nearest-neighbor configuration. With electron-nuclear double resonance the hyperfine and... (Read more)
- 532. Phys. Rev. B 35, 3810 (1987) , “EPR Studies of Heat-Treatment Centers in p-Type Silicon”, T. Gregorkiewicz, D. A. van Wezep, H. H. P. Th. Bekman, C. A. J. Ammerlaan.The influence of acceptor doping (B,Al,Ga,In) on heat-treatment (HT) centers in oxygen-rich silicon was studied by means of EPR and resistivity measurements. EPR studies revealed that spectra Si-NL8 and Si-NL10 were practically the only ones which could be related to HT centers. They could be... (Read more)
- 533. Phys. Rev. B 36, 1332 (1987) , “Arsenic antisite defect AsGa and EL2 in GaAs”, B. K. Meyer, D. M. Hofmann, J. R. Niklas, and J.-M. SpaethThe microscopic structure of the paramagnetic anion antisite defect in semi-insulating GaAs was determined by optically detected electron-nuclear double resonance (ODENDOR). It is an arsenic-antisite–arsenic-interstitial (AsGa-Asi) pair. It is shown, by optically detected ESR... (Read more)
- 534. Phys. Rev. B 36, 3528 (1987) , “Electron-Nuclear Double Resonance of Interstitial Chromium in Silicon”, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanThe positively charged state of interstitial chromium in silicon was investigated using electron-nuclear double resonance. We have found the hyperfine interaction of the impurity electrons with nine shells of surrounding silicon neighbors containing 102 atoms. The well-resolved fine structure due to... (Read more)
- 535. Phys. Rev. B 36, 5982 (1987) , “Temperature dependence of hyperfine coupling of the anion antisite in III-V compounds”, A. Mauger, H. J. von Bardeleben, J. C. Bourgoin, M. LannooTemperature-dependent electron-paramagnetic-resonance experiments have been performed on the arsenic antisite defect in electron-irradiated GaAs. The 4.5% decrease of the central hyperfine coupling constant A upon heating from 4 to 250 K is much too large to be attributable to the thermal expansion... (Read more)
- 536. Phys. Rev. B 36, 6202 (1987) , “Photoelectron Paramagnetic Resonance of Pt- in Silicon”, P. Omling, P. Emanuelsson, H. G. Grimmeiss.The Pt- center in silicon has been identified by its characteristic electron-paramagnetic-resonance (EPR) signal. From photo-EPR measurements, the optical cross sections of holes for the Pt(0/-) transition have been determined at T=4.2 K. A comparison with corresponding optical cross... (Read more)
- 537. Phys. Rev. B 36, 7726 (1987) , “Photoresponse of the FR3 electron-spin-resonance signal in GaAs”, U. Kaufmann, W. Wilkening, and M. BaeumlerThe photoresponse of the FR3 electron-spin-resonance (ESR) signal in GaAs has been studied. Excitation and quenching of the FR3 ESR is shown to result from the optically induced charge exchange between the FR3 center and the AsGa antisite. The FR3 ESR can be persistently excited with... (Read more)
- 538. Phys. Rev. B 36, 9638-9648 (1987) , “Theory of the Pb center at the <111> Si/SiO2 interface”, A. H. EdwardsWe present a series of semiempirical calculations on threefold-coordinated silicon at the ?111? Si/SiO2 interface. These were performed on finite clusters of atoms with use of hydrogen terminators in an unrestricted Hartree-Fock formalism wherein we include lattice relaxations. We have... (Read more)
- 539. Phys. Lett. A 125, 354 (1987) , “EPR Evidence of Helium-Oxygen-Vacancy Complexes in Crystalline Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevTwo new (S = 1) EPR spectra, labeled Si-AA7 and Si-AA8, arise from a helium-associated defect in crystalline silicon. Both are produced only in Czochralski-grown silicon by helium ion implantation at ≈ 20°C followed by annealing at ≈ 180°C and are stable to ≈... (Read more)Si| EPR| AA10 AA7 AA8 Helium vacancy .inp files: Si/V-He-O2 Si/AA10 Si/V-He-O1 | last update: Takeo Kitamura
- 540. Nucl. Instrum. Methods Phys. Res. 22, 553-555 (1987) , “Ion channeling study of damage in neutron irradiated GaAs”, K. Kuriyama, M. Satoh, M. Yahagi, K. Iwamura, C. Kim, T. Kawakubo, K. Yoneda and I. KimuraThe lattice disorder in GaAs produced by fast neutrons with a fluence of 7 × 1017 n cm−2 has been investigated with 1.5-MeV 4He+ channeling and electron spin resonance (ESR) measurements. The slight change in the 100-aligned yield for irradiated crystals indicates that each primary... (Read more)
- 541. Microscopy of semiconducting materials 39 (1987) , The Institute of Physics,London,A.G. Cullis and P.D. Augustus , “Defects induced by oxygen precipitation in silicon : a new hypothesis involving hexagonal silicon”, A bourret
- 542. Microscopy of semiconducting materials 463 (1987) , The Institute of Pysics,London,Noble M. Johnson, Stephen G. Bishop, George D. Watkins , “Metal impurities at the SIO2-Si interface”, K Honda,T Nakanishi,A Ohsawa,N Toyokura
- 543. Jpn. J. Appl. Phys. 26, L273 (1987) , “Determination of Al Composition and DLTS Measurements of AlxGa1-xSb on GaSb Substrate”, Yoshikazu Takeda, Xiao Cheng Gong, Yu Zhu, Akio SasakiDLTS (Deep Level Transient Spectroscopy) measurements have been carried out to investigate the electron-trap levels in Te-doped AlxGa1-xSb over a composition range from 0 to 0.4. Deep electron-traps were not detected in Te-doped n-type GaSb and AlGaSb with Al... (Read more)
- 544. J. Vac. Sci. Technol. B 5, 762 (1987) , “Observation of optically detected magnetic resonance signals in AlxGa1–xAs”, M. G. Spencer, T. A. Kennedy, R. Magno, J. GriffinOptically detected magnetic resonance (ODMR) techniques which utilize weak spin effects on deep photoluminescence have been applied to MBE AlxGa1xAs. ODMR [unlike conventional electron paramagnetic resonance (EPR)] experiments is ideally suited for thin... (Read more)
- 545. J. Phys. C: Solid State Phys. 20, 841 (1987) , “Self-ENDOR of Vanadium in Silicon”, J. J. van Kooten, D. van Kootwijk, C. A. J. Ammerlaan.Self-ENDOR measurements for the 51V isotope of double-positive vanadium in silicon are presented. The spin-Hamiltonian parameters have been determined. For an adequate description of the spectrum it was necessary to include a higher-order hyperfine term of the type S3I in the... (Read more)
- 546. J. Phys. C: Solid State Phys. 20, L367 (1987) , “Micro-emulsions in oil-water-surfactant mixtures: an Ising lattice gas model”, Kan Chen, C Ebner, C Jayaprakash and R PanditAn Ising lattice gas model is constructed for oil-water-surfactant mixtures. The phase diagram of this model is obtained by using mean-field theory and Monte Carlo simulations. The paramagnetic phase displays microstructures similar to those found in laboratory micro-emulsions. Also oil-rich,... (Read more)
- 547. J. Appl. Phys. 62, 4305-4308 (1987) , “Fundamental differences between thick and thin oxides subjected to high electric fields”, William L. Warren and P. M. LenahanWe observe atomic scale differences in the response of thin and thick oxides subjected to high electric fields. In stressed thick oxides, we observe the generation of a ``trivalent silicon'' trapped hole center, termed E; in stressed thin oxides no E centers were... (Read more)
- 548. J. Appl. Phys. 62, 4404 (1987) , “Electron-Paramagnetic-Resonance Study of Heat-Treatment Centers in n-Type Silicon”, H. H. P. Th. Bekman, T. Gregorkiewicz, D. A. van Wezep, and C. A. J. AmmerlaanDonor formation in heat-treated phosphorus-doped Czochralski-grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both ``thermal-donor-'' and ``new-donor''-formation temperature regions (470 and 650 °C, respectively) have been investigated. The results... (Read more)
- 549. J. Appl. Phys. 62, 4786 (1987) , “The capture barrier of the DX center in Si-doped AlxGa1–xAs”, P. M. Mooney, N. S. Caswell, and S. L. WrightWe report measurements of the capture barrier for the DX center in Si-doped AlxGa1xAs as a function of the alloy composition. A model of the capture process which requires a distribution of capture barrier heights has been fit to the data for... (Read more)
- 550. Appl. Phys. Lett. 50, 1450 (1987) , “Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films”, W. E. CarlosElectron spin resonance measurements of silicon-on-insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer.... (Read more)
- 551. Appl. Phys. Lett. 50, 1663-1665 (1987) , “Electron spin resonance observation of defects in device oxides damaged by soft x rays”, B. B. Triplett, T. Takahashi, and T. SuganoWe report the use of vacuum soft x-ray (VXR) exposure to efficiently generate paramagnetic defects in thin oxide layers. The VXR technique allows the observation of an E related defect called the 74-G doublet in quantities as large as the E. This defect is the first paramagnetic... (Read more)
- 552. Appl. Phys. Lett. 50, 1733 (1987) , “Pentavacancies in Plastically Deformed Silicon”, M. Brohl, C. Kisielowski-Kemmerich, and H. AlexanderHigh-pressure/low-temperature plastic deformation of silicon leads to the appearance of new electron spin resonance active centers. One of them could be identified to be the pentavacancy Si-P1, which also can be produced by irradiation. Depending on the deformation axis the defect occurs in... (Read more)
- 553. Appl. Phys. Lett. 51, 1103 (1987) , “Identification of an Interstitial Carbon-Interstitial Oxygen Complex in Silicon”, J. M. Trombetta and G. D. WatkinsAn electron paramagnetic resonance spectrum, observed in electron irradiated silicon and labeled Si-G15, is shown to originate from the same carbon-oxygen complex as does the well studied C-line photoluminescence spectrum with zero-phonon line at 0.79 eV.... (Read more)
- 554. Appl. Phys. Lett. 51, 1155 (1987) , “Identification of a bistable defect in silicon: The carbon interstitial-carbon substitutional pair”, L. W. Song, B. W. Benson, and G. D. WatkinsBy using a combination of deep level transient spectroscopy (DLTS) and electron paramagnetic resonance techniques applied to samples of varying compositions, we identify the bistable defect at Ec 0.17 eV in irradiated n-type silicon as a carbon... (Read more)
- 555. Appl. Phys. Lett. 51, 256 (1987) , “Interstitial defect reactions in silicon”, M. T. Asom, J. L. Benton, R. Sauer, and L. C. KimerlingDeep level transient spectroscopy has been employed in a study of impurity-interstitial defect reactions in silicon following room-temperature electron irradiation. Three defects have been isolated and identified from their reactions and electrical properties as... (Read more)
- 556. Sov. Phys. Semicond. 22, 408 (1988) , “Electron spin resonance of bound holes in GaAs:Mn”, V. F. Masterov, K. F. Shtel'makh, M. N. Barbashov
- 557. Sov. Phys. Semicond. 22, 666 (1988) , “Low-Symmetry Interstitial Defect in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.the ESR method was used in detection and investigation of a new paramagnetic center (designated H12 by the present authors) in silicon irradiated with large neutron doses. The concentration of the H12 centers was ~1016cm-3 when the radiation does was ~1019cm-2; it was independent of the nature of the dopant and the crystal growth method. The angular dependence of the ESR spectrum was described by a spin Hamiltonian with an electron spin s ï¼ 1/2 and a Ä tensor characterized by the C1 (or Ci) symmetry. The hyperfine structure of the H12 spectrum included three groups of lines which correspond to one, two, and two or three sites in the zeroth, first, and second "shells" of the defects, respectively. High-temperature (T ï¼ 100-200 ℃) uniaxial compression resulted in partial reorientation of the defect, which was characterized by an activation energy Ea ~1 eV and a frequency factor ν0~1013 s-1. The structure of the immediate environment of the defect, its symmetry, and the similarity of the hyperfine structure parameters and of the Ä tensor of the H12 and P6 spectra (the latter representing a complex of two interstitial atoms) were used, together with the nature and magnitude of teh response of the ESR spectrum to uniaxial compression, to propose a model of the H12 defect in the form of a complex of three interstitial atoms (I3+).
- 558. Sov. Phys. JETP 67, 1697 (1988) , “Electric-Dipole Spin Resonance of Localized Electron States at Dislocation Dipoles in Undeformed Oxygen-Containing Silicon”, V. M. Babich, N. P. Baran, A. A. Bugai, A. A. Konchits, B. D. Shanina.An electric-dipole spin resonance (EDSR) of new local centers at dislocation dipoles, formed as a result of prolonged annealing of undeformed silicon, was observed for the first time and investigated. At low temperatures (1.7-40 K) such undeformed silicon samples exhibited considerable microwave conductivity, the behavior of which was correlated with that of EDSR of new (Si-2K and Si-3K) centers. The intensity and profile of the EDSR signals due to these centers depended on the intensity and orientation of the E1 component of the microwave field and the absorption lines were in the form of asymmetric dispersion curves. Both the resonant and the microwave conductivity disappeared (reversibly) as a result of interband illumination and irreversibly as a result of ultrasonic excitation of considerable amplitude, electron or gamma-ray bombardment, or annealing at T ≥ 1150 K. The Rashba and Sheka theory of the EDSR was modified for the case of local dislocation centers. A theory was developed of the profile of the EDSR lines, which accounts completely for the experimental results.
- 559. Solid State Commun. 65, 1039 (1988) , “Paramagnetic resonance of a Se-Al complex in silicon”, A. B. van Oosten and C. A. J. AmmerlaanIn selenium diffused, aluminum doped silicon a new electron paramagnetic resonance (EPR) spectrum, Si-NL31, was observed as a broad structure superposed on the selenium pair resonance. The EPR spectrum could not be analyzed directly, but an intense 27Al electron nuclear double resonance... (Read more)
- 560. Solid State Commun. 67, 573 (1988) , “ESR investigations of CrCu and CrAu pairs in silicon”, D. Rodewald, S. Severitt, H. Vollmer and R. LabuschA new ESR spectrum ist observed after co-diffusion of Cr and Cu in Si. Because of its axial [111]-symmetry and its spin S = 3/2 it is interpreted as a (Cr1 Cus)° pair. (Read more)
- 561. Phys. Stat. Sol. (b) 145, 609 (1988) , “Electron Paramagnetic Resonance of the Mn40 Cluster in Silicon”, J. Kreissl, W. Gehlhoff.In high-resistivity p-type and n-type silicon doped with manganese the Mn40 cluster is identified by EPR. The spectrum shows a characteristic hyperfine structure and an angular dependence of fine structure at 20 K. The analysis of the spectrum yield the assumption of the... (Read more)
- 562. Phys. Rev. Lett. 60, 1422 (1988) , “Theory of hydrogen passivation of shallow-level dopants in crystalline silicon”, K. J. Chang and D. J. ChadiThe stable structures, vibrational modes, and passivation mechanisms of an interstitial hydrogen atom in boron- and phosphorus-doped crystalline silicon are determined by an ab initio pseudopotential method. Our calculated formation energies for passivated H-B and H-P complexes are 2.5 and 2.0 eV,... (Read more)
- 563. Phys. Rev. Lett. 60, 2183 (1988) , “Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2?”, Jaroslaw Dabrowski, Matthias SchefflerWe performed parameter-free, self-consistent calculations of the electronic structures, total energies, and forces of the As antisite, of an As-interstitial-Ga-vacancy defect pair, and of various configurations between these limits. The total-energy surface exhibits an interesting metastability. The... (Read more)
- 564. Phys. Rev. Lett. 60, 2187 (1988) , “Metastability of the Isolated Arsenic-Antisite Defect in GaAs”, D. J. Chadi and K. J. ChangWe propose that a neutral As-antisite defect in GaAs has a stable fourfold and a metastable, threefold interstitial configuration differing by 0.24 eV in their energies. The barrier height from the metastable to the normal state is calculated to be 0.34 eV. The metastable geometry is predicted to... (Read more)
- 565. Phys. Rev. Lett. 60, 224 (1988) , “29Si Hyperfine Structure of Anomalous Muonium in Silicon: Proof of the Bond-Centered Model”, R. F. Kiefl* and M. Celio,T. L. Estle,S. R. Kreitzman, G. M. Luke, and T. M. Riseman,E. J. AnsaldoThe 29Si hyperfine structure of the anomalous muonium center in silicon has been resolved in muonspin-rotation spectra. The spectra of the weak 29Si satellite lines show that there are two equivalent Si neighbors on the symmetry axis with large positive p-like spin densities.... (Read more)
- 566. Phys. Rev. Lett. 60, 321 (1988) , “Lattice Location of Deuterium Interacting with the Boron Acceptor in Silicon”, B. Bech Nielsen and J. U. AndersenThe lattice location of deuterium diffused into boron-doped silicon has been studied by means of channeling. After removal of a 0.2-μm-thick surface layer, it is found that 87% of the deuterium atoms occupy near-bond-center sites, whereas the remaining 13% are located close to tetrahedral sites. It... (Read more)
- 567. Phys. Rev. Lett. 60, 460 (1988) , “Bistable Defect in Silicon: The Interstitial-Carbon-Substitutional-Carbon Pair”, L. W. Song, X. D. Zhan, B. W. Benson, G. D. Watkins.By combining several spectroscopic techniques, we have observed a new type of bistable center in electron-irradiated silicon and have identified it as an interstitial-carbon–substitutional-carbon pair. The positive and negative charge states of the defect share a common stable configuration which... (Read more)
- 568. Phys. Rev. Lett. 61, 1650 (1988) , “Electrical Detection of Nuclear Magnetic Resonance in GaAs-AlxGa1-xAs Heterostructures”, M. Dobers, K. v. Klitzing, J. Schneider, G. Weimann, K. PloogThe experimental investigation of the electron spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures via the ESR-induced change of magnetoresistivity reveals hysteresis and long-persisting memory effects. We have been able to prove the nuclear... (Read more)
- 569. Phys. Rev. Lett. 61, 227 (1988) , “Si-NL10: Paramagnetic Acceptor State of the Silicon Thermal Donor”, H. H. P. Th. Bekman, T. Gregorkiewicz, and C. A. J. AmmerlaanElectron paramagnetic resonance studies on several donor- and acceptor-doped, oxygen-rich, silicon samples have been performed. The intensity of the spectrum Si-NL10 has been investigated as a function of heat-treatment time, temperature, and illumination. The results provide evidence for an... (Read more)
- 570. Phys. Rev. Lett. 61, 2786 (1988) , “Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon”, Michael Stavola, K. Bergman, S. J. Pearton, and J. LopataThe motion of hydrogen in the B-H complex in silicon has been studied. An applied stress is used to produce a preferential alignment of the B-H complex at temperatures sufficiently high for the H to move within the complex (above ∼60 K). This alignment of the complexes is detected by comparing the... (Read more)
- 571. Phys. Rev. B 37, 1043 (1988) , “Characterization of DX center in the indirect AlxGa1-xAs alloy”, M. Mizuta, K. MoriThe behavior of the DX center in AlxGa1-xAs (x?0.6) doped with Si and Se was investigated through photo-Hall measurements. The simultaneous existence of the shallow (metastable) and deep DX levels has been proven by the observation of persistent photoconductivity (PPC) whose... (Read more)
- 572. Phys. Rev. B 37, 6353 (1988) , “Interaction of deuterium with defects in silicon studied by means of channeling ”, B. Bech NielsenThe lattice location of deuterium ion-implanted at low temperatures into silicon has been studied by means of the channeling technique. The channeling analysis is carried out at 30 K along the major axes and planes by means of the D(3He,p)4He nuclear reaction. Irradiation at 30... (Read more)
- 573. Phys. Rev. B 37, 6887 (1988) , “State and motion of hydrogen in crystalline silicon”, Peter Deák, Lawrence C. Snyder, and James W. CorbettThe open-shell version of the modified intermediate neglect-of-differential-overlap molecular-orbital method has been used to obtain the equilibrium positions of H, H+, and H2 in a 32-atom cyclic silicon cluster. Two shells of silicon neighbors around the defect have been... (Read more)
- 574. Phys. Rev. B 37, 7268 (1988) , “Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR”, D. A. van Wezep, C. A. J. AmmerlaanThe electron-nuclear double-resonance spectra of interstitial 47Ti+ and 49Ti+ in silicon have been measured at 4.2 K. Spin Hamiltonians for these systems were determined and had to include hyperfine contributions of the type S3I and... (Read more)
- 575. Phys. Rev. B 37, 8298 (1988) , “Evidence for large lattice relaxation at the DX center in Si-doped AlxGa1-xAs”, P. M. Mooney, G. A. Northrop, T. N. Morgan, H. G. GrimmeissNew measurements of the energy dependence of the photoionization cross section of the DX center in Si-doped AlxGa1-xAs are reported. With the use of a tunable infrared laser which provides sufficient light intensity in a very narrow wavelength range, the photoionization cross... (Read more)
- 576. Phys. Rev. B 37, 8949 (1988) , “Electron-Nuclear Double Resonance of Interstitial Positively Charged Iron in Silicon”, J. J. van Kooten, E. G. Sieverts, and C. A. J. AmmerlaanThe positively charged state of interstitial iron in silicon was studied by means of electron-nuclear double resonance. We have found hyperfine interactions of the impurity electrons with eight shells of silicon neighbors containing 98 atoms. Because the ground state of interstitial Fe+... (Read more)
- 577. Phys. Rev. B 38, 12752(R) (1988) , “Formation energies, abundances, and the electronic structure of native defects in cubic SiC”, C. Wang, J. Bernholc, R. F. DavisThe relative abundance of native point defects in cubic SiC has been studied via ab initio calculations as a function of composition and the Fermi-level position. For Si-rich cubic SiC, the SiC antisite is the dominant defect in n-type material, while the carbon vacancy, which is a double... (Read more)
- 578. Phys. Rev. B 38, 13291 (1988) , “Sulfur Pair in Silicon: 33S Electron-Nuclear Double Resonance”, A. B. van Oosten, C. A. J. Ammerlaan.Sulfur pairs in silicon are studied by electron paramagnetic resonance (EPR) and by 33S electron-nuclear double resonance. The trigonal symmetry and electron spin S=(1/2 are experimentally established. For magnetic field B parallel to the [111] pair axis, the EPR intensity is strongly... (Read more)
- 579. Phys. Rev. B 38, 1589 (1988) , “Motional Effects between On-Center and Off-Center Substitutional Nitrogen in Silicon”, Kouichi Murakami, Hitoshi Kuribayashi, and Kohzoh MasudaWe have found for the first time that the hyperfine splitting of the ESR of off-center substitutional nitrogen in silicon increases with increasing the temperature above ? 150 K. A model is proposed in which a hypothetical on-center substitutional N site exists in an adiabatic potential-energy... (Read more)
- 580. Phys. Rev. B 38, 3395-3399 (1988) , “Electrical and Optical Properties of Defects in Silicon Introduced by High-Temperature Electron Irradiation”, Jian-Guo Xu, Fang Lu, and Heng-Hui Sun2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy Ec-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present... (Read more)
- 581. Phys. Rev. B 38, 3998 (1988) , “Microscopic Structure of the NL10 Heat-Treatment Center in Silicon: Study of Electron-Nuclear Double Resonance”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe defect center giving rise to the Si-NL10 EPR spectrum has been investigated by the electron-nuclear double-resonance (ENDOR) technique. Three separate experiments have been performed: oxygen ENDOR of 17O nuclei, aluminum ENDOR of 27Al, and field-stepped ENDOR. As a result a... (Read more)
- 582. Phys. Rev. B 38, 4388 (1988) , “Sign of the hyperfine parameters of anomalous muonium in diamond”, W. Odermatt, Hp. Baumeler, H. Keller, W. Kündig, B. D. Patterson, J. W. Schneider, J. P. F. Sellschop, M. C. Stemmet, S. Connell, D. P. SpencerObservations with the muon-spin-rotation (?SR) technique of the thermally activated transition from the isotropic muonium state Mu to the anisotropic muonium state Mu* in diamond are used to determine the sign of the Mu* hyperfine constants. It is found that the isotropic part... (Read more)
- 583. Phys. Rev. B 38, 5453 (1988) , “Electron-spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures”, M. Dobers, K. v. Klitzing, G. WeimannElectron-spin resonance affects the magnetoresistivity of GaAs-AlxGa1-xAs heterostructures. With microwave frequencies of up to 70 GHz we studied systematically the spin splitting of the Landau levels in magnetic fields up to 14.5 T. The resonances within a certain Landau level... (Read more)
- 584. Phys. Rev. B 38, 6003 (1988) , “EL2 and the electronic structure of the AsGa-Asi pair in GaAs: The role of lattice distortion in the properties of the normal state”, G. A. Baraff, M. Lannoo, and M. SchlüterThe proposal that in its normal state EL2 is an AsGaAsi pair with a [111] axis and two-bond-length separation is tested by performing electronic structure calculations for that defect pair. The Asi is allowed to minimize its energy by moving along the [111] axis. Its... (Read more)
- 585. Phys. Rev. B 38, 6308 (1988) , “EPR Observation of a Platinum Pair Complex in Si”, H. J. von Bardeleben, D. Stiévenard, M. Brousseau, J. Barrau.We report the observation of a (Pt-Pt) pair in Si. The defect is paramagnetic, with a g tensor of C2v symmetry and principal values of g[110]=2.1869, g[1¯10]=1.5181, and g[001]=1.6317. The central hyperfine spectra show interaction with two equivalent Pt ions. This defect gives rise to an... (Read more)
- 586. Phys. Rev. B 38, 9657 (1988) , “Kinetics of H2 Passivation of Pb Centers at the (111) Si-SiO2 Interface”, K. L. Brower.This paper is concerned with the determination of the kinetic parameters and the chemical reactions that characterize the passivation of Pb centers with molecular hydrogen. Pb centers are paramagnetic defects at the (111) Si-SiO2 interface. In this study... (Read more)
- 587. Phys. Rev. B 38, 9674-9685 (1988) , “Hyperfine interactions in cluster models of the Pb defect center”, M. Cook, C. T. WhiteHyperfine interactions in the Pb center (denoted schematically as Si3?Si?) at the Si(111)/SiO2 interface have been studied with use of spin-polarized self-consistent multiple-scattering X? calculations on Si22H21/Si6O18... (Read more)
- 588. Jpn. J. Appl. Phys. 27, 1808 (1988) , “ESR in Diamond Thin Films Synthesized by Microwave Plasma Chemical Vapor Deposition”, I. Watanabe, K. SugataA variety of diamond films of poor and good quality are synthesized by microwave plasma CVD from a mixture of hydrogen and CH4, CH3OH or C2H5OH. A comparative study on the ESR and Raman spectra of these films is performed. The diamond films of good quality... (Read more)
- 589. J. Phys. C: Solid State Phys. 21, 1869 (1988) , “Transient optical absorption and luminescence induced by band-to-band excitation in amorphous SiO2”, K Tanimura, C Itoh and N ItohThe transient optical absorption and luminescence induced by irradiation of amorphous SiO2 with an electron pulse have been measured. It is found that the transient optical absorption spectra do not depend on impurities and have a strong peak at 5.3 eV and a satellite peak at 4.2 eV. The... (Read more)
- 590. J. Phys. C: Solid State Phys. 21, 4385 (1988) , “Optically detected spin coherence of the diamond N-V centre in its triplet ground state”, E. van Oort, N. B. Manson, M. GlasbeekFor the N-V centre in type Ib diamond the optical detection of spin coherence in the 3A state is reported. The 3A-state lifetime is studied as a function of the light intensity used for the optical excitation of the N-V centre by means of spin-locking experiments. The... (Read more)
- 591. J. Phys. C: Solid State Phys. 21, L431 (1988) , “The model of a triplet self-trapped exciton in crystalline SiO2”, A L ShlugerMaking use of the self-consistent quantum chemical calculations dealing with the many-electron models of a crystal with a defect, the author has shown that the triplet exciton self-trapping in crystalline SiO2 occurs due to the displacement by about 0.3 AA of an oxygen ion from a regular... (Read more)
- 592. J. Non-Cryst. Solids 104, 85-94 (1988) , “Radiation damage in vitreous fused silica induced by MeV ion implantation*1”, Shi Chengru, Tan Manqi , T. A. TombrelloThe nature of E′1 defects in vitreous fused silica induced by high energy (1–17 MeV) Cl and F ion implantation in terms of ion fluence, ion energy, saturation behavior and annealing feature, has been studied and compared with results obtained after 2 MeV proton and 0.633 MeV... (Read more)
- 593. J. Electrochem. Soc. 135, 11C (1988) , “Degradation of III-V Opto-Electronic Devices”, O. Ueda
- 594. J. Chem. Phys. 88, 481 (1988) , “Neon matrix ESR investigation of 69,71GaAs + generated by the photoionization of laser vaporized GaAs(s)”, Lon B. Knight, Jr. and J. T. PettyThe first spectroscopic results are reported for the 69,71GaAs + cation radical generated by photoionizing GaAs (g) produced by the pulsed laser vaporization of GaAs (s). The GaAs + cation was trapped in neon matrices at 4 K for ESR investigations... (Read more)
- 595. J. Catalysis 111, 199-209 (1988) , “Structural analysis of ZnO/ZnCr2O4/Pd catalyst”, Lucio ForniThe ZnO/ZnCr2O4/Pd mixture is an effective catalyst for the preparation of pyrazines from diamines and glycols. The effects of the method of preparation, the Zn/Cr ratio, and the concentration of Pd have been studied by analyzing the catalyst structure using several techniques. In the coprecipitated... (Read more)
- 596. J. Appl. Phys. 63, 1086 (1988) , “Deep-level analysis in Te-doped GaAs0.62P0.38”, M. Kaniewska and J. KaniewskiDeep-level transient spectroscopy and photocapacitance techniques have been used to study the features of the main electron trap, with thermal activation energy equal to EB=0.39 eV, present in Te-doped GaAs0.62P0.38, obtained by vapor-phase epitaxy.... (Read more)
- 597. Appl. Phys. Lett. 52, 1161 (1988) , “Spin-dependent recombination in irradiated Si/SiO2 device structures”, R. L. Vranch, B. Henderson, M. PepperWe report studies of spin-dependent recombination at the Si/SiO2 interface in electron irradiated (100) and (111) p-channel metal-oxide-silicon field-effect transistors and metal-oxide-silicon wafers. Electron spin resonance transitions on the Pb center... (Read more)
- 598. Appl. Phys. Lett. 52, 1689 (1988) , “Hole photoionization cross sections of EL2 in GaAs”, P. Silverberg, P. Omling, and L. SamuelsonThe spectral dependence of the hole photoionization cross section 0p" align="middle"> of EL2 in GaAs has been determined in absolute numbers at T=78 and 295 K. From simultaneous measurements of the electron photoionization cross section 0n" align="middle">,... (Read more)
- 599. Appl. Phys. Lett. 52, 383 (1988) , “Direct evidence of the DX center link to the L-conduction-band minimum in GaAlAs”, E. Calleja, A. Gomez, and E. MuñozHydrostatic pressure techniques together with deep level transient spectroscopy (DLTS) measurements have shown that the Si-DX center in GaAlAs is linked to the L-conduction-band minimum. When hydrostatic pressure is applied to a 74% Al content sample, an exponential reduction of... (Read more)
- 600. Appl. Phys. Lett. 53, 1711 (1988) , “Observation of iron pileup and reduction of SiO2 at the Si-SiO2 interface”, Yoichi Kamiura and Fumio Hashimoto and Motohiro IwamiIt was found by secondary-ion mass spectrometry in-depth profiling technique that approximately 1×1020 iron atoms/cm3 accumulated at the Si-SiO2 interface of oxidized silicon crystals where iron was introduced by the indiffusion prior to the oxidation at 1000... (Read more)
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