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- 201. Phys. Rev. B 79, 075201 (2009) , “First-principles studies of small arsenic interstitial complexes in crystalline silicon”, Yonghyun Kim, Taras A. Kirichenko, Ning Kong, Graeme Henkelman, and Sanjay K. BanerjeeWe present a first-principles study of the structure and dynamics of small As-interstitial complexes (AsI2, As2I2, AsI3, and As2I3) in crystalline Si. These complexes can be important components of stable As-interstitial clusters or... (Read more)
- 202. Phys. Rev. B 79, 075207 (2009) , “EPR study of local symmetry sites of Ce3+ in Pb1−xCexA (A=S, Se, and Te)”, X. Gratens, V. Bindilatti, V. A. Chitta, N. F. Oliveira, and Jr.The local site symmetry of Ce3+ ions in the diluted magnetic semiconductors Pb1−xCexA (A=S, Se, and Te) has been investigated by electron-paramagnetic resonance (EPR). The experiments were carried out on single crystals with cerium... (Read more)
- 203. Phys. Rev. Lett. 102, 075506 (2009) , “Proton Tunneling: A Decay Channel of the O-H Stretch Mode in KTaO3”, E. J. Spahr, L. Wen, M. Stavola, L. A. Boatner, L. C. Feldman, N. H. Tolk, and G. LüpkeThe vibrational lifetimes of the O-H and O-D stretch modes in the perovskite oxide KTaO3 are measured by pump-probe infrared spectroscopy. Both stretch modes are exceptionally long lived and exhibit a large “reverse” isotope effect, due to a phonon-assisted proton-tunneling process, which involves the O-Ta-O bending motion. The excited-state tunneling rate is found to be 7 orders of magnitude larger than from the ground state in the proton conducting oxide, BaCeO3 [Phys. Rev. B 60, R3713 (1999)]. (Read more)
- 204. Phys. Rev. Lett. 82, 113 - 116 (1999) , “First-Principles Study of Structural Bistability in Ga- and In-Doped CdF2”, C. H. Park and D. J. ChadiWe have identified the microscopic structures for the shallow and deep donor states of Ga and In donor impurities in CdF2 through first-principles calculations. The deep state arises from a large [100]-axis atomic displacement of a donor. It has all the properties of a DX center; i.e., it... (Read more)
- 205. Phys. Rev. Lett. 82, 1883 - 1886 (1999) , “Identification of Vacancy-Impurity Complexes in Highly n-Type Si”, K. Saarinen, J. Nissilä, H. Kauppinen, M. Hakala, M. J. Puska, P. Hautojärvi, and C. CorbelWe show that the detailed atomic structure of vacancy-impurity complexes in Si can be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies complexed with a single impurity, V-P and V-As, are identified in electron irradiated Si. The... (Read more)
- 206. Appl. Phys. Lett. 93, 072102 (2008) , AIP , “Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor”, L. H. Willems van Beveren, H. Huebl, D. R. McCamey, T. Duty, A. J. Ferguson, R. G. Clark, and M. S. BrandtWe report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At millikelvin temperatures, continuous wave spectra were obtained up to 40 ... (Read more)
- 207. Phys. Rev. Lett. 82, 2552 - 2555 (1999) , “Residual Native Shallow Donor in ZnO”, D. C. Look, J. W. Hemsky, and J. R. SizeloveHigh-energy electron irradiation in ZnO produces shallow donors at about EC-30 meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial ZnI or a... (Read more)
- 208. Phys. Rev. Lett. 82, 2111 - 2114 (1999) , “Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon”, A. Resende, R. Jones, S. Öberg, and P. R. BriddonFirst-principles local-density formalism cluster theory is used to determine the structure of Au- and Ag-hydrogen complexes in Si. The theory, with an empirical correction, is then applied to extract their donor and acceptor levels and these are compared with capacitance transient spectroscopic... (Read more)
- 209. Phys. Rev. Lett. 82, 3276 - 3279 (1999) , “Universality of the Bond-Breaking Mechanism in Defect Bistability: Observation of Open Volume in the Deep States of In and Ga in CdF2”, J. Nissilä, K. Saarinen, P. Hautojärvi, A. Suchocki, and J. M. LangerPositron annihilation experiments reveal an open-volume defect in the deep state atomic configurations of bistable donors In and Ga in CdF2. The size of the open volume is at least half of a monovacancy. The results are similar to those obtained previously for the DX centers in the... (Read more)
- 210. Phys. Rev. Lett. 82, 3819 - 3822 (1999) , “Direct Evidence of Phosphorus-Defect Complexes in n-Type Amorphous Silicon and Hydrogenated Amorphous Silicon”, Mihail P. Petkov, Marc H. Weber, Kelvin G. Lynn, Richard S. Crandall, and Vinita J. GhoshWe use positron annihilation spectroscopy (PAS) to identify the phosphorus-defect complex (*D-) in n-type hydrogenated amorphous Si ( a-Si:H). The positrons are attracted and localized at the small open volume associated with the dangling bond defects. The radiation detected... (Read more)
- 211. Phys. Rev. Lett. 82, 4870 - 4873 (1999) , “Theory of the Nucleation, Growth, and Structure of Hydrogen-Induced Extended Defects in Silicon”, F. A. Reboredo, M. Ferconi, and S. T. PantelidesImplantation and plasma indiffusion of H in crystalline Si are known to induce planar defects (platelets) whose structure has remained elusive. We report extensive first-principles calculations that reveal mechanisms for the nucleation and growth of aggregates of second-neighbor hydrogenated... (Read more)
- 212. Phys. Rev. Lett. 83, 372 - 375 (1999) , “Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica”, Peter E. Blöchl and James H. StathisHydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, are analyzed using first-principles calculations. Energetics and charge-state levels of oxygen vacancies, hydrogen, and their complexes in the silica framework are mapped out. The neutral hydrogen... (Read more)
- 213. Appl. Phys. Lett. 94, 061910 (2009) , “Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy”, M. J. Wang, L. Yuan, C. C. Cheng, C. D. Beling, and K. J. ChenDefect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180... (Read more)
- 214. Phys. Rev. Lett. 102, 065502 (2009) , “Transition Metal Impurities on the Bond-Centered Site in Germanium”, S. Decoster, S. Cottenier, B. De Vries, H. Emmerich, U. Wahl, J. G. Correia, and A. VantommeWe report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the... (Read more)
- 215. Phys. Rev. Lett. 83, 1351 - 1354 (1999) , “Symmetry of Molecular H2 in Si from a Uniaxial Stress Study of the 3618.4 cm-1 Vibrational Line”, J. Anna Zhou and Michael StavolaUniaxial stress has been used in conjunction with vibrational spectroscopy to probe the structure and microscopic properties of interstitial H2 in Si. The stress splitting pattern observed for the 3618.4 cm -1 line assigned to H2 is consistent with triclinic (... (Read more)
- 216. Phys. Rev. Lett. 83, 1990 - 1993 (1999) , “Thermally Activated Reorientation of Di-interstitial Defects in Silicon”, Jeongnim Kim, Florian Kirchhoff, Wilfried G. Aulbur, John W. Wilkins, Furrukh S. Khan, and Georg KresseWe propose a di-interstitial model for the P6 center commonly observed in ion-implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center from low-temperature C1h to... (Read more)
- 217. Phys. Rev. Lett. 83, 1799 - 1801 (1999) , “Planar Self-Interstitial in Silicon”, M. M. De Souza, C. K. Ngw, M. Shishkin, and E. M. Sankara NarayananThe aim of this paper is to demonstrate, for the first time, the possible existence of planar point defect silicon self-interstitials in the {311} plane. The results offer a plausible explanation as to why self-interstitials aggregate to form {311} defect clusters during ion implantation. These... (Read more)
- 218. Phys. Rev. Lett. 83, 3852 - 3855 (1999) , “Large Pairing Jahn-Teller Distortions Around Divacancies in Crystalline Silicon”, Serdar Öğüt and James R. ChelikowskyAb initio atomic and electronic structures of neutral (V2 0) and charged (V2 +,V2 -,V2 2-) Si divacancies are investigated using bulk-terminated clusters with up to ≈320 Si atoms. For the first... (Read more)
- 219. Phys. Rev. Lett. 83, 3254 - 3257 (1999) , “Magnetospectroscopy of Acceptors in “Blue” Diamonds”, Hyunjung Kim, A. K. Ramdas, S. Rodriguez, M. Grimsditch, and T. R. AnthonyThe Zeeman effect of the Δ′ [1s(p3/2):Γ8→1s(p1/2):Γ7] Raman line of boron acceptors in diamond exhibits the predicted eight components and four transitions within the Γ8 multiplet, discovered under diverse polarization... (Read more)
- 220. Phys. Rev. Lett. 83, 4582 - 4585 (1999) , “Alloy Splitting of Gold and Platinum Acceptor Levels in SiGe”, L. Dobaczewski, K. Gościński, K. Bonde Nielsen, A. Nylandsted Larsen, J. Lundsgaard Hansen, and A. R. PeakerLaplace transform deep level transient spectroscopy was used to study the acceptor levels of platinum and gold diffused into dilute (0– 5% Ge) SiGe alloys. We show that Ge atoms in the first and in the second shell of atoms surrounding the impurity perturb the electronic properties of the Au and... (Read more)
- 221. Phys. Rev. Lett. 83, 4345 - 4348 (1999) , “First-Principles Study of Boron Diffusion in Silicon”, W. Windl, M. M. Bunea, R. Stumpf, S. T. Dunham, and M. P. MasquelierIn this Letter we investigate boron diffusion as a function of the Fermi-level position in crystalline silicon using ab initio calculations. Based on our results, a new mechanism for B diffusion mediated by Si self-interstitials is proposed. Rather than kick out of B into a mobile channel, we find a... (Read more)
- 222. Phys. Rev. Lett. 83, 4140 - 4143 (1999) , “Spontaneous Symmetry Breaking of Acceptors in “Blue” Diamonds”, Hyunjung Kim, A. K. Ramdas, S. Rodriguez, M. Grimsditch, and T. R. AnthonyThe electronic Raman transition between the lower 1s(p3/2) and the higher 1s(p1/2) state of a hole bound to a boron acceptor in diamond, examined under the high resolution of a Fabry-Pérot interferometer, reveals a doublet separated by (0.81±0.15) cm-1, indicative... (Read more)
- 223. Phys. Rev. Lett. 83, 5294 - 5297 (1999) , “Novel Muonium State in CdS”, J. M. Gil, H. V. Alberto, R. C. Vilão, J. Piroto Duarte, P. J. Mendes, L. P. Ferreira, N. Ayres de Campos, A. Weidinger, J. Krauser, Ch. Niedermayer, and S. F. CoxA new type of muonium defect center has been observed in undoped CdS below 20 K. The hyperfine interaction amounts only to approximately 10-4 of the vacuum value, and is shown to have axial symmetry along the Cd-S bond direction. Results suggest that the muon is close to the sulfur... (Read more)
- 224. Phys. Rev. Lett. 84, 1495 - 1498 (2000) , “Lattice Location and Stability of Ion Implanted Cu in Si”, U. Wahl, A. Vantomme, G. Langouche, J. G. Correia, and ISOLDE CollaborationWe report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of β- particles emitted by the radioactive isotope 67Cu was monitored following room temperature implantation into Si single crystals and annealing up... (Read more)
- 225. Phys. Rev. B 79, 014102 (2009) , “Vacancy defect positron lifetimes in strontium titanate”, R. A. Mackie, S. Singh, J. Laverock, S. B. Dugdale, and D. J. KeebleThe results of positron-annihilation lifetime spectroscopy measurements on undoped, electron-irradiated, and Nb-doped SrTiO3 single crystals are reported. Perfect lattice and vacancy defect positron lifetimes were calculated using two different first-principles schemes. The Sr-vacancy... (Read more)
- 226. Phys. Rev. Lett. 84, 3137 - 3140 (2000) , “Electron-Irradiation-Induced Radiolytic Oxygen Generation and Microsegregation in Silicon Dioxide Polymorphs”, Marion A. StevensThe first direct in situ observations of the production and microsegregation of radiolytic interstitial oxygen resulting from electron beam irradiation of crystal and amorphous oxygen deficient SiO2 polymorphs has been made using cathodoluminescence (CL) microanalysis (spectroscopy and... (Read more)
- 227. Phys. Rev. Lett. 84, 4926 - 4929 (2000) , “Overcoordinated Hydrogens in the Carbon Vacancy: Donor Centers of SiC”, A. Gali, B. Aradi, P. Deák, W. J. Choyke, and N. T. SonEpitaxial silicon carbide is likely to contain hydrogen and vacancies ( V); therefore, V+nH complexes are likely to influence its electronic properties. Using ab initio calculations we show that neutral and positive H atoms are trapped by carbon vacancies ( VC) in three-center bonds with... (Read more)
- 228. Phys. Rev. B 78, 235204 (2008) , “Symmetry of the phosphorus donor in diamond from first principles”, Bozidar Butorac and Alison MainwoodPhosphorus is the only donor in diamond which can be used technologically. Several ab initio theoretical models have been published on substitutional phosphorus, and most of them have predicted that it should have tetrahedral or trigonal symmetry. Recent ab initio calculations... (Read more)
- 229. Phys. Rev. B 78, 235203 (2008) , “Electron paramagnetic resonance of sulfur at a split-vacancy site in diamond”, J. M. BakerIn natural diamonds a sulfur-related paramagnetic center labeled W31 has been previously tentatively assigned to an interstitial sulfur species in a positive charge state. However, we show by combining an assessment of available experimental data and density-functional simulations that the hyperfine... (Read more)
- 230. Phys. Rev. B 78, 233201 (2008) , “Gallium interstitial in irradiated germanium: Deep level transient spectroscopy”, Vl. Kolkovsky, M. Christian Petersen, A. Mesli, J. Van Gheluwe, P. Clauws, and A. Nylandsted LarsenTwo electronic levels at 0.34 eV above the valence band and 0.32 eV below the conduction band, in gallium doped, p-type Ge irradiated with 2 MeV electrons have been studied by deep level transient spectroscopy (DLTS) with both majority- and minority-carrier injections, and Laplace DLTS... (Read more)
- 231. Phys. Rev. Lett. 101, 247604 (2008) , “Measurement of Cu(II) Copper Defect Dipoles in Ferroelectric PbTiO3 Using Electron-Nuclear Double Resonance”, R. R. Garipov, J.-M. Spaeth, and D. J. KeeblePoint defects associated with Cu(II) in ferroelectric PbTiO3 were determined using pulsed electron-nuclear double resonance (ENDOR). Three centers were observed, and neighbor 207Pb superhyperfine tensors to the third shell of equivalent Pb ions measured. The ENDOR angular... (Read more)
- 232. J. Appl. Phys. 105, 013504 (2009) , “Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices”, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Akio Takano, Kentarou Sawano, and Yasuhiro ShirakiWe investigated the contributions of neutral and charged silicon self-interstitials to self- and boron diffusion during transient enhanced diffusion in silicon. We simultaneously observed self- and boron diffusion in silicon using natSi/28Si isotope superlattices. A calculation... (Read more)
- 233. Angew. Chem. Int. Ed. 47, (2008) , Wily , “Ag@AgCl: A Highly Efficient and Stable Photocatalyst Active under Visible Light”, PengWang, Baibiao Huang,* Xiaoyan Qin, Xiaoyang Zhang, Ying Dai, JiyongWei, and Myung-Hwan Whangbo
- 234. Phys. Rev. Lett. 85, 417 - 420 (2000) , “Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State of ZnS- in Si”, H. Schroth, K. Laßmann, S. Voß, and H. BrachtElectric-dipole spin resonance of the deep acceptor ZnS- in Si reveals close Γ8 and Γ7 ground states with zero-field separation of only 0.31 meV as compared to the 43 meV of the two valence bands. With Landé's formula for the g factors of a... (Read more)
- 235. Sov. Phys. Solid State 31, 1376 (1989) , “Equivalent States of Muonium and Hydrogen in Silicon”, R. B. Gelfand, V. A. Gordeev, Yu. V. Gorelkinski?, R. F. Konopleva, S. A. Kuten, A. V. Mudry?, N. N. Nevinny?, Yu. V. Obukhov, V. I. Rapoport, A. G. Ulyashin, V. G. Firsov.An experimental investigation was made of the hydrogenic states having an anisotropic hyperfine structure, which were formed in silicon single crystals as a result of implantation of high-energy muons and protons. The characteristics of the states of "anomalous" muonium (Mu*) and a hydrogen center (Si-AA9, investigated by the methods of muon spin rotation (μSR) and electron spin resonance (ESR) in silicon allowing for the isotopic effect, were found to be similar. This was the basis for hypothesizing the existence of two equivalent structures in silicon (Mu*) and Si-AA9), differing only with respect to the mass of the hydrogenic atom occuring in each of the centers. Semiemprecal cluster calculations were made of the electronic structure of the se centers under conditions of hydrogen (muonium) localization at different lattice interstices. The parameters of the hyperfine interaction and the electronic g factors of the impurity atom were calculated. The most probable configuration of the Mu* and Si-AA9 complexes, and their charge state were established.
- 236. Appl. Phys. A 48, 59 (1989) , “Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy ”, Th. Wichert, M. Deicher, G. Grbel, R. Keller, N. Schulz and H. SkudlikThe formation of molecule-like complexes, consisting of a defect and a radioactive 111In atom, is studied using the perturbed γγ angular correlation technique (PAC). The complexes are characterized by their defect specific electric field gradients which also contain information on the geometry of the formed complexes. Whereas the complex is formed with the111In atom, its electric field gradient is measured after the decay of the radioactive 111In atom to 111Cd. Formation and dissolution of the molecule-like complexes is pursued for a variety of different conditions, such as sample temperature, dopant concentration and position of the Fermi level. In particular, the interaction of In atoms with the following defects in Si was investigated: Intrinsic defects, created by particle irradiation; substitutional donor atoms (P, As, Sb, Bi); and interstitial impurity atoms (Li, H, and an unidentified X defect); especially, the latter ones are known to passivate acceptor atoms in Si. Methodology and specific properties of the PAC technique will be illustrated with the help of these examples. (Read more)
- 237. Semicond. Sci. Technol. 4, 1000 (1989) , “The .Si ≡ Si3 defect at various (111)Si/SiO2 and (111)Si/Si3N4 interfaces”, A. Stesmans.The low-temperature (2 ≤ T ≤ 45 K) X- and K-band electron spin resonance (ESR) properties of the Si/SiO2 interfacial (111) PbO defect-identified with .Si ≡ Si3 and with the unpaired sp3 hybrid along (111)-as localised at three 'different'... (Read more)
- 238. Solid State Commun. 70, 807 (1989) , “EPR Identification of a Trigonal FeIn Defect in Silicon”, P. Omling, P. Emanuelsson, W. Gehlhoff and H. G. GrimmeissA new electron paramagnetic resonance signal is observed in silicon which has been co-doped with indium and iron. The spectrum shows trigonal symmetry, and the involvement of one Fe and one In atom is proven from the observed hyperfine interactions. The defect is identified as an InS-Fei pair... (Read more)
- 239. phys. stat. sol. (b) 156, 325 (1989) , “EPR of Lithium-Induced Silicon-5dn Pairs in Silicon”, M. Höhne.A platinum-analogue to the lithium-induced silicon-gold pair, previously investigated, is now detected by EPR. The results underline the close similarity of platinum- and gold-related defects in silicon and suggest a remark concerning the absence of an EPR-proof of the isolated gold defect, contrary... (Read more)
- 240. Jpn. J. Appl. Phys. 28, 142 (1989) , “Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon”, A. Hara, T. Fukuda, T. Miyabo, I. Hirai.We observed the electron spin resonance of oxygen-nitrogen complexes (ONCs) and found that they have C2V symmetry. Although they contain nitrogen, hyperfine interaction (hf) with nitrogen cannot be clearly observed. These characters of ONCs resemble thermal donors (TDs) very closely. (Read more)
- 241. J. Phys.: Condens. Matter 1, 35 (1989) , “The Structure of Chalcogen Pairs in Silicon”, S. Greulich-Weber, J. R. Niklas, J. M. Spaeth.The chalcogen pair centres (S-S)+ and (Se-Se)+ in Si were investigated with electron-nuclear double resonance (ENDOR). It was possible to resolve the superhyperfine interactions with 16 shells ((S-S)+) and 20 shells ((Se-Se)+) of 29Si neighbours... (Read more)
- 242. Solid State Commun. 67, 573 (1988) , “ESR investigations of CrCu and CrAu pairs in silicon”, D. Rodewald, S. Severitt, H. Vollmer and R. LabuschA new ESR spectrum ist observed after co-diffusion of Cr and Cu in Si. Because of its axial [111]-symmetry and its spin S = 3/2 it is interpreted as a (Cr1 Cus)° pair. (Read more)
- 243. Solid State Commun. 65, 1039 (1988) , “Paramagnetic resonance of a Se-Al complex in silicon”, A. B. van Oosten and C. A. J. AmmerlaanIn selenium diffused, aluminum doped silicon a new electron paramagnetic resonance (EPR) spectrum, Si-NL31, was observed as a broad structure superposed on the selenium pair resonance. The EPR spectrum could not be analyzed directly, but an intense 27Al electron nuclear double resonance... (Read more)
- 244. Phys. Stat. Sol. (b) 145, 609 (1988) , “Electron Paramagnetic Resonance of the Mn40 Cluster in Silicon”, J. Kreissl, W. Gehlhoff.In high-resistivity p-type and n-type silicon doped with manganese the Mn40 cluster is identified by EPR. The spectrum shows a characteristic hyperfine structure and an angular dependence of fine structure at 20 K. The analysis of the spectrum yield the assumption of the... (Read more)
- 245. Sov. Phys. Semicond. 22, 666 (1988) , “Low-Symmetry Interstitial Defect in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.the ESR method was used in detection and investigation of a new paramagnetic center (designated H12 by the present authors) in silicon irradiated with large neutron doses. The concentration of the H12 centers was ~1016cm-3 when the radiation does was ~1019cm-2; it was independent of the nature of the dopant and the crystal growth method. The angular dependence of the ESR spectrum was described by a spin Hamiltonian with an electron spin s = 1/2 and a ĝ tensor characterized by the C1 (or Ci) symmetry. The hyperfine structure of the H12 spectrum included three groups of lines which correspond to one, two, and two or three sites in the zeroth, first, and second "shells" of the defects, respectively. High-temperature (T = 100-200 ℃) uniaxial compression resulted in partial reorientation of the defect, which was characterized by an activation energy Ea ~1 eV and a frequency factor ν0~1013 s-1. The structure of the immediate environment of the defect, its symmetry, and the similarity of the hyperfine structure parameters and of the ĝ tensor of the H12 and P6 spectra (the latter representing a complex of two interstitial atoms) were used, together with the nature and magnitude of teh response of the ESR spectrum to uniaxial compression, to propose a model of the H12 defect in the form of a complex of three interstitial atoms (I3+).
- 246. Sov. Phys. JETP 67, 1697 (1988) , “Electric-Dipole Spin Resonance of Localized Electron States at Dislocation Dipoles in Undeformed Oxygen-Containing Silicon”, V. M. Babich, N. P. Baran, A. A. Bugai, A. A. Konchits, B. D. Shanina.An electric-dipole spin resonance (EDSR) of new local centers at dislocation dipoles, formed as a result of prolonged annealing of undeformed silicon, was observed for the first time and investigated. At low temperatures (1.7-40 K) such undeformed silicon samples exhibited considerable microwave conductivity, the behavior of which was correlated with that of EDSR of new (Si-2K and Si-3K) centers. The intensity and profile of the EDSR signals due to these centers depended on the intensity and orientation of the E1 component of the microwave field and the absorption lines were in the form of asymmetric dispersion curves. Both the resonant and the microwave conductivity disappeared (reversibly) as a result of interband illumination and irreversibly as a result of ultrasonic excitation of considerable amplitude, electron or gamma-ray bombardment, or annealing at T ≥ 1150 K. The Rashba and Sheka theory of the EDSR was modified for the case of local dislocation centers. A theory was developed of the profile of the EDSR lines, which accounts completely for the experimental results.
- 247. phys. stat. sol. (b) 130, K51 (1985) , “New EPR Spectrum in Helium-Implanted Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi, A. A. Kim.Recently /1 to 4/ a unique class of electron-vibronic photoluminescence spectra in silicon has been found. These spectra have been observed exclusively after noble gas (in particular, helium) ion implantation and partial annealing, above 200 ℃. Tkachev et al. /1, 3/ have suggested that noble gas... (Read more)
- 248. Sov. Phys. JETP 66, 838 (1987) , “Combined Electron Resonance in a One-Dimensional Dislocation Band”, V. V. Kveder, T. R. Mchedlidze, Yu. A. Osipyan, A. I. Shalynin.The intensity and width of the combined electron resonance line for dislocations in silicon are investigated as functions of temperature, microwave electric field, and illumination. the resonance intensity grows as T-2.4 with decreasing temperature; this indicates that the electron mobility increases, and hence that band conduction rather than hoppimg along dislocations is the primary conduction mechanism. The energy of the dislocation band is found, and the saturation and width of the line are discussed
- 249. J. Phys. C: Solid State Phys. 20, 841 (1987) , “Self-ENDOR of Vanadium in Silicon”, J. J. van Kooten, D. van Kootwijk, C. A. J. Ammerlaan.Self-ENDOR measurements for the 51V isotope of double-positive vanadium in silicon are presented. The spin-Hamiltonian parameters have been determined. For an adequate description of the spectrum it was necessary to include a higher-order hyperfine term of the type S3I in the... (Read more)
- 250. Solid State Commun. 64, 1489 (1987) , “Electron Paramagnetic Resonance of an Fe-Fe Pair in Silicon”, J. J. van Kooten, E. G. Sieverts and C. A. J. AmmerlaanThe electron paramagnetic resonance spectrum Si-NL24, which is associated with an iron-iron impurity pair and was earlier observed in electron-irradiated silicon, was produced as a quenched-in defect spectrum. Contrary to previous work we could resolve the complete angular dependence of the spectrum... (Read more)
- 251. Phys. Lett. A 125, 354 (1987) , “EPR Evidence of Helium-Oxygen-Vacancy Complexes in Crystalline Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevTwo new (S = 1) EPR spectra, labeled Si-AA7 and Si-AA8, arise from a helium-associated defect in crystalline silicon. Both are produced only in Czochralski-grown silicon by helium ion implantation at ≈ 20°C followed by annealing at ≈ 180°C and are stable to ≈... (Read more)Si| EPR| AA10 AA7 AA8 Helium vacancy .inp files: Si/V-He-O2 Si/AA10 Si/V-He-O1 | last update: Takeo Kitamura
- 252. Sov. Phys. Semicond. 21, 29 (1987) , “Vacancy-Impurity Defect with Spatially Separated Components in Electron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich, B. P. Kashnikov.The ESR metod was used to study heavily doped n-type silicon (dopant concentrarions up to 2×1018 cm-3) irradiated with large doses of 1 MeV electrons. The G16 spectrum dominated the results obtained. A superhyperfine structure (SHFS) was observed in the spectrum: it corresponded to the hyperfine interaction of a paramagnetic electron with nuclei of the 29Si silicon isotope which were located in four shells. A numerical analysis of the spectra yielded the SHFS line intensities and the numbers of equivalent sites in the shells: three sites in the first shell, one in the second, two in the third, and five or six in the fourth. A study of the G16 spectrum under unaxial compression conditions at temperatures 150-500 K revealed two activation energies (EA1 ≈ 0.25, EA2 ≈ 1.4 eV ) representing the process of reorientation of the investigated defect. The results obtained were used to propose a model of the G16 center. This was a vacancy-impurity complex in which the vacancy was localized in the second coordination sphere relative to the impurity atom. The mechanism resulting in a spatial separation of the components in this defect was considered. It was assumed that the impurity atom occuring in the G16 center was carbon.
- 253. J. Phys. C: Solid State Phys. 19, 841 (1986) , “Carbon-related radiation damage centres in Czochralski silicon”, G Davies, A S Oates, R C Newman, R Woolley, E C Lightowlers, M J Binns and J G WilkesWe show that the intensity of the 790 meV electronic absorption line and the C(3) vibrational line at 865 cm-1 correlate in Czochralski (CZ) silicon regardless of carbon concentrations, radiation doses and stages of annealing. Three weak vibrational lines at 529, 550 and 742... (Read more)
- 254. Sov. Phys. Solid State 28, 1862 (1986) , “Electron States Having Spin S ≥ 1 at Dislocations in Silicon”, M. N. Zolotukhin.The kinetics of restoration of the ESR spectrum fine structure lines in silicon crystals containing dislocations is the same for bound spins at dislocations as for the ESR dark spectrum of broken (dangling) bonds at dislocations after illumination of the crystal has ended. It is of the barrier type and is controlled by hole capture at the broken-bond level. The fine structure of the dislocation ESR spectrum is determined by the defect structure of the dislocations, which depends considerably on the way in which they were formed in the crystals.
- 255. Phys. Lett. A 118, 347 (1986) , “An EPR study of a new C2 symmetry defect in neutron-irradiated silicon”, E. Wu, J. C. Mao, S. X. Wu, M. X. Yan, G. G. Qin.A new defect, labeled Si-PK4, has been observed with EPR in neutron-irradiated FZ-silicon grown in argon. Its g tensor reveals that Si-PK4 has monoclinic-II symmetry (C2 point group) with one symmetry axis pointing to 100. According to the empirical classification of g... (Read more)
- 256. Phys. Lett. A 59, 238 (1976) , “An EPR study of optical absorption of the oxygen-vacancy pair in electron-irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.The negative charge state of the vacancy-oxygen pair (Si-B1) in irradiated silicon was populated by illumination with polarized light, from which the direction of the electric dipole moment was determined to be near 110 perpendicular to the (Si-O-Si) bond axis. Energy dependence of the alignment... (Read more)
- 257. Sov. Phys. Semicond. 20, 688 (1986) , “Spin-Dependent Recombination and Low-Frequency ESR Spectroscopy of Impurities and Defects in Silicon”, L. S. Vlasenko, V. A. Khramtsov.the change in the photoconductivity of silicon crystals due to saturation of ESR transition in paramagnetic recombination centers was used to record the ESR spectra of radiation defects in weakly irradiated silicon crystals. The ESR spectra of samples with defect concentration below 1012 cm-3 were recorded on the basis of a change in the Q factor of the spectrometer resonator because of a change in the photocarrier density at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photocarrierdensity at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photoconductivity of the samples were detected in the absence of a resonance alternating field at values of a static magnetic field corresponding to the points of intersection of magnetic sublevels of the paramagnetic centers with spin S > 1/2. The proposed experimental method was used to record a number of new ESR spectra of irradiated silicon crystals.
- 258. Sov. Phys. JETP 64, 612 (1986) , “Spin-Dependent Effects Due to Triplet Centers in Irradiated Silicon”, L. S. Vlasenko, M. P. Vlasenko, V. N. Lomasov, V. A. Khramtsov.A study has been made of the optical polarization of nuclei and spin-dependent photoconductivity in silicon crystals containing structural defects which are in excited triplet states when illuminated, with a nonequilibrium distribution of the populations of magnetic sublevels. Mixing of triplet states differing iin spin projection is necessary for the onset of an optical polarization of nuclei as the nuclei participate in a hyperfine interaction with the triplet centers. A correlation is found between the angular distribution and the temperature dependence of the intensities of the ESR lines of triplet centers and of the degree of optical polarization of the nuclei. It is shown that the saturation of the ESR transition of the triplet centers leads to a change in the photoconductivity of silicon crystals. A similar change in photoconductivity is obsserved at anticrossing of the magnetic sublevels of triplet centers.
- 259. J. Electrochem. Soc. 132, 3034 (1985) , “Quantitative Spectroscopy of Interstitial Oxygen in Silicon”, B. Pajot and H. J. Stein and B. Cales and C. NaudQuantitative data are presented on the infrared (IR) absorption of interstitial oxygen in oxygen-rich silicon using Fourier transform spectroscopy. Besides the wel-known and 1106 cm-1 room temperature IR bands, due to the symmetric and antisymmetric vibrations of the Si2O entity, respectively, three other bands at 1227, 1720, and 1013 cm-1 are reported, whose intensities are scaled with those of the 515 and 1106 cm-1 bands. The band at 1227 cm-1 has often been confused with an oxygen precipitate band observed at 1225 cm-1 in annealed silicon. Evidence is given that the 1227 cm-1 band is related to interstitial oxygen. It is also shown that another band at 1720 cm-1 is a combination of the antisymmetric mode of Si2O with a phonon combination of the silicon lattice. A weak band at 1013 cm-1 is reported for the first time, and it is attributed to an overtone of the 515 cm-1 mode. (Read more)
- 260. JETP Lett. 43, 255 (1986) , “Combined Resonance at Dislocations in Silicon”, V. V. Kveder, V. Ya. Kravchenko, T. R. Mchedlidze, Yu. A. Osipyan, D. E. Khmelnitski?, A. I. Shalynin.A combined resonance corresponding to transitions between Zeeman levels of electrons trapped in a one-dimensional dislocation band has been observed in plastically deformed silicon. The electrons are trapped by virtue of their motion along a dislocation under the influence of an rf electric field. (Read more)
- 261. phys. stat. sol. (b) 138, 337 (1986) , “A Silicon-Gold Pair in Silicon Investigated by EPR”, M. Höhne.A new gold-related defect in silicon is observed after IR irradiation. Though a thermal treatment including additional doping with lithium is necessary for the production of this centre, the lithium obviously does not participate in the paramagnetic state. The paramagnetic state is mainly localized... (Read more)
- 262. Solid State Commun. 58, 811 (1986) , “ESR Investigation of MnCu Pairs in Silicon”, H. Dietrich, H. Vollmer and R. LabuschThe new ESR spectra are observed after co-diffusion of Mn and Cu in Si. The experimentally observed spins are interpreted as (MnCu)+ and (MnCu)−-pairs with axial (1 1 1)-symmetry. To our knowledge these are the first ESR-identified, Cu-related centres in silicon. (Read more)
- 263. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 264. JETP Lett. 42, 38 (1985) , “Nonresonant Spin-Dependent Conductivity in Silicon”, L. S. Vlasenko, V. A. Khramtsov.A nonresonant change has been discovered in the photoconductivity of irradiated silicon crystals in a weak magnetic field. This new effect is shown to result from a spin-dependent recombination of photoexcited carriers through triplet centers. A change in the photoconductivity in the absence of a resonant alternating magnetic field arises at anticrossing points of magnetic sublevels of triplet centers. (Read more)
- 265. Mater. Res. Soc. Symp. Proc. 46, 237 (1985) , “ENDOR-Investigation of Al++ and Al++-Al- Pairs in Silicon”, J. R. Niklas, J. M. Spaeth, G. D. Watkins.With Electron Nuclear Double Resonance (ENDOR) ligand superhyperfine (shf) interactions were investigated for 7 neighbor shells of the interstitial Al++ center (Si-G18) and for 10 neighbor shells of the Al++-Al- pair center (Si-G19). All shells of the interstitial center exhibit undistorted Td symmetry confirming the defect model derived from earlier experiments. In the pair center the shf interaction of the Al++ with the neighboring Al nucleus shows a pure [111]-symmetry, also the shf interactions with the outer Si-neighbor shells exactly reflect this axial [111]-symmetry of the defect. The magnitude of the quadrupole interaction of the neighboring Al nucleus clearly shows, that this nucleus is a nearest neighbor of the Al++. From the angular dependence and the intensity ratios of ENDOR lines of the pair center it can be excluded that any additional impurity is associated with the Al++-Al- pair at least within the first 3 neighbor shells of the Al++. The influence of the Al- neighbor on the hyperfine axes of the first [111] Si-neighbors is negligible and is also remarkably small for the other Si-neighbors. The magnitudes of the ligand shf interactions gor the pair center are closely related to those of the Al++ center. A comparison of these values for both centers allows a definite assignment of the measured shf interactions to their corresponding neighbor shells for the Al++ center.
- 266. Mater. Res. Soc. Symp. Proc. 46, 263 (1985) , “Identity of the NL8 EPR Spectrum with Thermal Donors in Silicon”, K. M. Lee, J. M. Trombetta, G. D. Watkins.The effect of uniaxial stress on the NL8 EPR spectrum in 450℃ heat-treated silicon containing thermal donors (TD's) is described. Changes in the relative amplitudes of the NL8 spectral components are interpreted as arising from electronic redistribution between the differently oriented defects. These changes are consistant in sign and magnitude with those predicted for TD+ from observed stress effects on the TD IR and DLTS spectra.
- 267. Mater. Res. Soc. Symp. Proc. 46, 39 (1985) , “Electronic Defect Characterization”, H. G. Grimmeiss.Knowledge concerning the electronic properties of defects is crucial for the understanding of the behaviour of these defects in semiconductors. Considering the important role defects play in most currently used devices it is not surprising that a great number of different measurement techniques have been developed with the aim of not only quantitatively determining the electronic parameters but also of identifying the defect chemically and evaluating the local environment of such defects. In most cases this goal can not be achieved by applying only a single (defect property) measureing technique. In this paper an attempt is made, using two different examples. to show what achivements in defect characterization and identification can be obtained by combining two or more different measurement techniques. The first example is a single substitutional impurity, sulfur in silicon, while the second example deals with a more complex defect, the oxygen-vacancy center in silicon. In both cases a number of techniques such as different junction space charge measurements, Hall effect, absorption, ESR, photo-ESR, ENDOR photoconductivity, irradiaton and annealing processes, and even theory were used to study the defect. The advantages and limitations of various methodologies will be discussed.
- 268. Phys. Lett. A 110, 157 (1985) , “EPR of Neutral Vacancy-Helium Centers in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevIn this letter we report the first observation by EPR of helium-associated defects in solid. Two new (S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and... (Read more)
- 269. Sov. Phys. Semicond. 19, 1198 (1985) , “Nonorientable Divacancies in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.The electron spin resonance method was used in na investigation of heavily doped n-type silicon [phosphorus concentration NP = (2-10)×1018 cm-3] irradiated with reactor neutrons in doses 5×1017-4×1019 cm-2. In addition to the spectra of the familiar G7 (divacancy) and P3 (tetravacancy) centers, the investigated samples exhibited two new spectra denoted by H9 and H10. The parameters of the spin Hamiltonian of these spectra were determined. According to the results obtained, the H9 spectrum was due to nonorientable divacancies located in zones of strong lattice deformation zones was ε ≥ 10-3. It was postulated that H10 is a vacancy-type defect with a paramagnetic electron localized on a broken bond of a silicon atom. Some of the characteristics of the P3 and P6 spectra observed for heavily doped n-type silicon indicated that the manifestation of these centers depends on the Fermi level position.
- 270. Sov. Phys. Solid State 27, 1093 (1985) , “Electron Spin Resonance of Strain Probes in Gadolinium-Doped Silicon”, A. A. Buga?, V. E. Kustov, Yu. G. Semenov, V. I. Shakhovtsov, V. L. Shindich.The angular dependences of the ESR line width were studied for interstitial Fe0 and Mn0 in gadolinium-doped silicon. It was found that the addition of gadolinium causes considerable internal elastic deformations of the crystal. A theoretical calculation is given whereby the mean deformation charge density can be determined from the measured ESR line widths of strain--sensitive centers.
- 271. Mater. Res. Soc. Symp. Proc. 46, 525 (1985) , “Electronic Ground State of Iron-Acceptor Pairs in Silicon”, C. A. J. Ammerlaan, J. J. van Kooten.Iron-acceptor impurity pairs, consisting of a positively charged iron ion trapped on an interstitial site in the vicinity of an ionized acceptor, in silicon were observed by electron paramagneric resonance for all common acceptor dopants (B, Al, Ga, In). The Zeeman splittings of these pairs, to which both spin and orbital momenta contribute, cover the range between 1.1 and 6.4. An interpretation of these spectroscopic spliting factors is presented, shich considers the effects of the crystal field - of cubic, axial, or lower symmetry - and of spin-orbit interaction on the 4F ground state of the iron ion in a (3d)7 configuration. It is not due to a dynamical Jahn-Teller effect. nor due to hybridization. Rather, it is proposed that a significant reduction, by about 80%, of the orbital magnetism arises from covalency.
- 272. Solid State Commun. 51, 127 (1984) , “Carbon and Oxygen Isotope Effects in the 0.79 eV Defect Photoluminescence Spectrum in Irradiated Silicon ”, K. Thonke, G. D. Watkins$ and R. SauerThe 0.79 eV photoluminescence spectrum known to emerge in oxygen-rich irradiated silicon is studied in 13C and 18O enriched crystals. The peincipal no-phonon transition at 0.79 eV splits onto a doublet in the 13C enriched sample in a way directly demonstrating that one carbon atom per center is optically active. In contrast, no isotope effects are observed in the local mode replicicas. Doping the silicon with 18O slightly influences two local mode replicas giving the first direct evidence that oxygen is involved in the defect. (Read more)
- 273. phys. stat. sol. (a) 82, 235 (1984) , “Nature of Thermal Donors in Silicon Crystals”, M. Suezawa, K. SuminoThe formation process of thermal donors in Czochralski-grown silicon crystals at 471.3 ℃ is studied by means of the optical absorption at a low temperature. The development of six kinds of thermal donors, termed TD-1 through TD-6, is followed separately. Experimental results obtained are analyzed... (Read more)
- 274. Defects and defect processes in nonmetallic solids 1-464 (1985) , John.Wiley and sons , W. Hayes, A.M. Stoneham. WileyCHAPTER1. Electronic Properties CHAPTER2. Interatomic Forces and Atomic Motions CHAPTER3. Lattice Defects CHAPTER4. Spectroscopy of Solids CHAPTER5. Electronic Properties of Point Defects CHAPTER6. Radiation-Induced defect processes CHAPTER7. Properties of Surfaces CHAPTER8. Special Systems APPENDIX: Notation for Defects PHYSICAL CONSTANTS; Units and Conversion Factors SUPPLEMENTARY READING REFERENCES INDEX
- 275. Jpn. J. Appl. Phys. 19, L335 (1980) , “Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters ”, Hideyo Okushi and Yozo TokumaruA new measurement method for deep levels in semiconductors is proposed, by which the measurement of the transient change of capacitance is performed under an isothermal condition (Isothermal Capacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis... (Read more)
- 276. Sov. Phys. Semicond. 18, 1102 (1984) , “Electron Spin Resonance of Defects in Si:Al Irradiated with Large Electron Doses”, A. V. Dvurechenski?, B. P. Kashnikov, V. V. Suprunchik.Silicon containing aluminium in concentrations 6×1017-5×1018 cm-3 and irradiated with 1MeV electrons in doses of 1×1018-2×1020 cm-2 was found to have a new paramagnetic center designated H5. The ESR method was used to analyze the structure of the H5 center, which showed that the center has a spin of 1/2 and a {110} symmetry. The principal components of the g tensor and their orientations relative to the crystallographic axis were determined: g1=2.0063, g2=2.0005, g3=2.0036(±0.0001), θ=13±2°, where θ is the angle between the [110] and g1 directions, where both g1 and g2 lie in a (110) plane and g3||[110]. A hyperfine structure appeared because of the interaction of an unpaired electron with two inequivalent nuclei of the 29Si isotope and with the 27Al nucleus. The constant of the hyperfine interaction with the 27Al nucleus was (4.0±0.7)×10-4 cm-1. The hyperfine initeraction tensor for one of the 29Si nuclei was found to be axially symmetric and its principal values were detemined: A⊥=41.6×10-4 and A||= 62.5×10-4 cm-1. The densities of the wave function of the unpaired electron at each of the 29Si atoms(~24%) of which 15% is in the s state and 85% in the p state) and at 27Al(0.3%) were found. An analysis of the results obtained led to the conclusion that the H5 center consists of a divacancy and an interstitial aluminium atom located in a {110} plane. The unpaired electron is located on an extended orbital of the divacancy (representing about 50% of the wave funcrion densiry.
- 277. Solid State Commun. 51, 665 (1984) , “ESR of Selenium Pairs (Se+2) in Silicon”, R. Wrner, O. F. Schirmer.A slight anisotropy of the Se+2 ESR is resolved, revealing [111] axial symmetry. The pair groundstate is a2u in D3d symmetry, consistent with the almost complete s-character at the Se sites. The value of g|| is correlated with the binding energy of... (Read more)
- 278. Sov. Phys. Solid State 26, 66 (1984) , “EPR Study of Si-S1-Center Optical Excitation and Relaxation Processes in Irradiated Silicon”, L. S. Vlasenko, I. M. Zaritskii, A. A. Konchits, B. D. Shanina.For the first time transition processes in the excited state of the neutral oxygen-containing vacancy in silicon (Si-S1 center) were studied by EPR over a wide temperature range (2.5-100 K). By comparing the experimental results with theory, it was established that the formation of the excited triplet state occurs with participation of photoexcited current carriers in contrast with a number of similar systems where excitation takes place within the centers. The different spins in the triplet state are due to the selective nature of their decay processes while the formation processes are nonselective. The temperature dependence above 20 K of dynamic system characteristics is determined by the inclusion of an intrinsic spin-relaxation mechanism of triplet states.
- 279. Solid State Commun. 51, 951 (1984) , “Electron Paramagnetic Resonance of a Nitrogen-Related Centre in Electron Irradiated Silicon”, M. Sprenger, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanThe observation by electron paramagnetic resonance of a centre related to nitrogen as an impurity in silicon is reported. While all previously reported nitrogen-related centres in silicon were produced by nitrogen implantation, the present centre is observed after electron irridiation of... (Read more)
- 280. J. Phys. C: Solid State Phys. 17, L911 (1984) , “ENDOR Investigation of Se+ in Silicon”, S. Greulich-Weber, J. R. Niklas, J. -M. Spaeth.Se+ donors in silicon from deep level impurities. They were investigated with electron nuclear double resonance (ENDOR). The superhyperfine (SHF) interactions with eight shells of 29Si neighbour nuclei were analysed and it was confirmed that the electron spin is... (Read more)
- 281. phys. stat. sol. (a) 86, 313 (1984) , “New EPR Defects in Si<Al>”, A. V. Dvurechenskii, B. P. Kashnikov, V. V. Suprunchik.Two new paramagnetic centres, labeled Si-H5 and Si-H6 are found in silicon containing aluminium (6 × 1017 to 5 × 1018 cm-3) and irradiated with high dose of 1 Me V electrons (up to 2 × 1020 cm-2). Spin-Hamiltonian constants of the Si-H5... (Read more)
- 282. phys. stat. sol. (a) 82, 533 (1984) , “The Effect of Heat Treatment on Compensated CZ Silicon”, P. I. Baranskii, V. M. Babich, N. P. Baran, A. A. Bugay, Yu. P. Dotsenko, V. B. Kovalchuk.Thermally induced donors in Czochralski-grown p-Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed. (Read more)
- 283. phys. stat. sol. (a) 75, 473 (1983) , “Eigenschaften einiger störstellenkomplexe von gold in silizium”, H. LemkeThe properties of some ion pairs between donorsor doubke donors of the 3d-group and the acceptor gold are investigated by DLTS-and TSCa-techniques. The pair (Fe+Au-) is an accepter at Ec - 0.34 eV with rcn = 3 × 10-8... (Read more)
- 284. J. Phys. C: Solid State Phys. 16, 6197 (1983) , “Self-diffusion in intrinsic germanium and effects of doping on self-diffusion in germanium”, G Vogel, G Hettich and H MehrerSelf-diffusion in intrinsic germanium single crystals has been investigated over the temperature range 822-1163K using 71Ge as radioisotope and a sputtering technique for serial sectioning. The data can be described by a preexponential factor of (2.48±0.6)×10-3 m2... (Read more)
- 285. J. Phys. C: Solid State Phys. 16, L667 (1983) , “Self-interstitials and thermal donor formation in silicon: new measurements and a model for the defects”, R C Newman, A S Oates and F M LivingstonSilicon containing oxygen (1018 cm-3) and carbon (7×1017 cm-3) has been heated at 450 degrees C for times up to 600 h to generate thermal donors. Measurements indicate that for every two oxygen atoms that are precipitated there is generation of one... (Read more)
- 286. Solid State Commun. 47, 631 (1983) , “Hyperfine Interactions from EPR of Iron in Silicon”, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan, E. R. Wever.At high microwave power very well resolved EPR spectra from isolated neutral interstitial iron atoms in silicon can be observed. From these spectra hyperfine interactions with at least three shells of neighbouring lattice sites, containing 18 or 22 atoms, can be determined. The localization of the... (Read more)
- 287. Solid State Commun. 46, 121 (1983) , “ENDOR Investigation of Tellurium Donors in Silicon”, J. R. Niklas and J. M. SpaethParamagnetic Te+ donors in silicon form deep level impurities. They were investigated with electron nuclear double resonance (ENDOR). The superhyperfine interaction with 12 shells of 29Si nuclei could be determined and it was confirmed that S = 1/2. 10 % of the unpaired spin... (Read more)
- 288. phys. stat. sol. (b) 115, 443 (1983) , “EPR of Iron-Boron Centres in Silicon”, W. Gehlhoff, K. H. Segsa.The EPR spectra of one type of iron-boron centres detected in low-resistivity B-doped p-silicon after iron doping are investigated in detail. The spectra are characterized by a dominating zerofield splitting and a resolved SHF structure due to the interaction with the boron isotopes and arise from... (Read more)
- 289. J. Phys. C: Solid State Phys. 15, 2059 (1982) , “Uniaxial stress analysis of the 0.79 eV vibronic band in irradiated silicon”, C P FoyThe 0.79 eV system is examined in absorption for the frst time and is found to consist of four lines between 0.79 and 0.8 eV. Uniaxial stress measurements on these four lines are reported and the symmetry of the centre is established as monoclinic I. The relative intensities of the stress-split... (Read more)
- 290. phys. stat. sol. (b) 109, 83 (1982) , “EPR Observation of an Au-Fe Complex in Silicon II Electronic Structure”, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan, R. L. Kleinhenz, J. W. Corbett.For a description of the Au-Fe complex which is discussed in Part I of this article, a model by Ludwig and Woodbury is adopted. This model does not allow for an analysis of the observed hyperfine interactions in a simple LCAO description. Instead a model of exchange coupled spins is proposed. The... (Read more)
- 291. Solid State Commun. 43, 41 (1982) , “The Neutral Divacancy in Silicon”, E. G. Sieverts, J. W. Corbett.Extended Hückel Theory calculations have been carried out on a cluster of silicon atoms to examine the relative stability of two configurations of the divacancy: (1) two vacancies on adjacent sites, i.e. the "normal" divacancy configuration; and (2) two vacancies separated by two... (Read more)
- 292. phys. stat. sol. (b) 112, 695 (1982) , “EPR Investigation of Manganese-Boron Pairs in Silicon”, J. Kreissl, W. Gehlhoff.After manganese doping of low-resistivity B-doped p-silicon an EPR centre is detected, which could be identified in accordance with Ludwig and Woodbury as a manganese-boron pair, where a interstitially incorporated Mn2+ ion is located in the immediate vicinity of a B- ion on a... (Read more)
- 293. phys. stat. sol. (b) 109, 525 (1982) , “Electron Paramagnetic Resonance of Gold in Silicon. II. Cluster Centres”, M. Höhne.The interpretation of the EPR spectrum suggests two alternative models: five gold atoms or three gold atoms with two boron atoms, respectively, form a cluster occupying lattice sites and adjacent interstitial sites. This cluster tends to further precipitation. Both of the paramagnetic gold-related... (Read more)
- 294. phys. stat. sol. (a) 68, 561 (1981) , “Thermally-Induced Defects in Silicon Containing Oxygen and Carbon”, N. S. Minaev, A. V. MudryiThermal defect generation processes are investigated in heat-treated (250 to 600 ºC, 1 to 500 h) silicon crystals by a low-temperature photoluminescence method. In the spectral range from 0.75 to 1.20 eV, a number of emission bands are found. Some of these bands have been already observed in the... (Read more)
- 295. Solid State Commun. 37, 371 (1981) , “A New EPR Center Due to Dislocations in Phosphorous Doped Silicon”, E. Weber and H. AlexanderIn plastically deformed, phosphorous doped silicon a new EPR center is found, Si-K7, which has to be ascribed to an impurity related defect in the dislocation core. From its concentration the accumulation of impurity atoms, supposedly phosphorous, in the dislocation core can be concluded. (Read more)
- 296. phys. stat. sol. (b) 108, 363 (1981) , “EPR Observation of an Au-Fe Complex in Silicon: I. Experimental Data”, R. L. Kleinhenz, Y. H. Lee, J. W. Corbett, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan.After quenching of Au-doped FZ silicon an anisotropic axially symmetric EPR spectrum is observed. The spectrum exhibits a hyperfine interaction with 197Au nuclei (I = 3/2). In samples which were intentionally doped with isotopically enriched 57Fe (I = 1/2) an additional... (Read more)
- 297. phys. stat. sol. (b) 103, 519 (1981) , “Investigation of the Dislocation Spin System in Silicon as Model of One-Dimensional Spin Chains”, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.Magnetic properties of the dislocation dangling bond (DDB) spin system in silicon crystals are investigated by means of the EPR technique at T = (1.3 to 150) K. Experimental results are obtained which enable one to develop a one-dimensional model of the spin system according to which the DDB chains... (Read more)
- 298. Hyperfine Interactions 7, 449 (1980) , “Mössbauer study of 119Sn Defects in Silicon from Ion Implantations of Radioactive 119In ”, Weyer G.1 Damgaard S.1 Petersen J. W.1 and Heinemeier J.Radioactive 119In+ions (T1/2 = 2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mössbauer emission spectra from the 24 keV γ-radiation of the daughter 119Sn have been measured by fast resonance-counting technique. Five independent lines, characterized by their hyperfine parameters and Debye temperatures, have been found in the spectra. From the bonding configurations, deduced for the Sn-impurity atoms, these are concluded to be located in four different defects in the silicon lattice. Simple models are proposed for the defects. (Read more)
- 299. Sov. Phys. Semicond. 14, 1277 (1980) , “Photo-Electron Spin Resonance of K Centers in Electron Irradiated Silicon”, L. S. Vlasenko, A. A. Lebedev, V. M. Rozhkov.The ESR method was used to study photoexcited K centers in n-type silicon irradiated with 30 MeV electrons. The investigation was carried out in the temperature range 77-160ºK. It was found that the ESR spectrum of the K centers appeared in electron-irradiated n-type silicon when this material was illuminated with light of photon energy hν > 0.76 eV and it was observed for a long time after the end of illumination. The use of longer light wavelength resulted in the disappearance (quenching) of the ESR spectrum of the K centers. A study was made of the kinetics of the excitation and quenching of the ESR spectra of the K centers by photons of different energies and the spectral dependence of the photoionization cross section of the K centers was recorded. The optical and thermal ionization energies of these centers. as well as the carriercapture cross sections were determined.
- 300. phys. stat. sol. (b) 99, 651 (1980) , “Electron Paramagnetic Resonance of Gold in Silicon.I. Single Atoms; Strong Nuclear Quadrupole Effect”, M. Höhne.In Si : Au rapidly quenched two centres are observed by EPR, the first of which is investigated in this paper. The spectrum is characterized by a dominating Zeeman interaction and by a nuclear quadrupole interaction large compared to the hyperfine interaction. Passage conditions depend on the... (Read more)
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