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- 401. Appl. Phys. Lett. 42, 961 (1983) , “Kinetics of self-interstitials generated at the Si/SiO2 interface”, K. Taniguchi and D. A. Antoniadis and Y. MatsushitaThe kinetics of self-interstitials in silicon were investigated by monitoring oxidation stacking faults on backside oxidized silicon wafers in the temperature range 11001200 °C in a wet O2 ambient. The diffusion coefficient and thermal equilibrium concentration of... (Read more)
- 402. Appl. Phys. Lett. 43, 1111 (1983) , “29Si hyperfine structure of unpaired spins at the Si/SiO2 interface”, K. L. BrowerThe hyperfine spectrum associated with unpaired electrons at the (111) Si/SiO2 interface (Pb centers) is reported for the first time. Electron paramagnetic resonance measurements indicate that the hyperfine interaction S··I arises from the... (Read more)
- 403. Appl. Phys. Lett. 43, 563-565 (1983) , “Characteristic electronic defects at the Si-SiO2 interface”, N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, P. J. CaplanOn unannealed, thermally oxidized silicon, electron spin resonance reveals an oriented interface defect which is termed the Pb center and identified as the trivalent silicon defect. Deep level transient spectroscopy (DLTS) reveals two broad characteristic peaks in the... (Read more)
- 404. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 405. Surf. Sci. 141, 255-284 (1984) , “X AND K BAND ESR STUDY OF THE Pb INTERFACE CENTRES IN THERMALLY OXIDIZED p-TYPE (001)Si WAFERS AT LOW TEMPERATURES AND INFLUENCE OF MEDIUM-DOSE As+ ION IMPLANTATION”, A. Stesmans, J. Braet, J. Witters, R. F. DekeersmaeckerElectron spin resonance (ESR) experiments have been carried out at cryogenic temperatures (4.2 T 35 K) and room temperatures at 9.0 and 20.9 GHz on the Pb0 and Pb1 (commonly referred to as Pb) spin-active defects residing at the Si/SiO2 interface. The ESR lineshapes were shown to display gaussian... (Read more)
- 406. Sov. Phys. Solid State 26, 66 (1984) , “EPR Study of Si-S1-Center Optical Excitation and Relaxation Processes in Irradiated Silicon”, L. S. Vlasenko, I. M. Zaritskii, A. A. Konchits, B. D. Shanina.For the first time transition processes in the excited state of the neutral oxygen-containing vacancy in silicon (Si-S1 center) were studied by EPR over a wide temperature range (2.5-100 K). By comparing the experimental results with theory, it was established that the formation of the excited triplet state occurs with participation of photoexcited current carriers in contrast with a number of similar systems where excitation takes place within the centers. The different spins in the triplet state are due to the selective nature of their decay processes while the formation processes are nonselective. The temperature dependence above 20 K of dynamic system characteristics is determined by the inclusion of an intrinsic spin-relaxation mechanism of triplet states.
- 407. Sov. Phys. Semicond. 18, 1102 (1984) , “Electron Spin Resonance of Defects in Si:Al Irradiated with Large Electron Doses”, A. V. Dvurechenski?, B. P. Kashnikov, V. V. Suprunchik.Silicon containing aluminium in concentrations 6×1017-5×1018 cm-3 and irradiated with 1MeV electrons in doses of 1×1018-2×1020 cm-2 was found to have a new paramagnetic center designated H5. The ESR method was used to analyze the structure of the H5 center, which showed that the center has a spin of 1/2 and a {110} symmetry. The principal components of the g tensor and their orientations relative to the crystallographic axis were determined: g1=2.0063, g2=2.0005, g3=2.0036(±0.0001), θ=13±2°, where θ is the angle between the [110] and g1 directions, where both g1 and g2 lie in a (110) plane and g3||[110]. A hyperfine structure appeared because of the interaction of an unpaired electron with two inequivalent nuclei of the 29Si isotope and with the 27Al nucleus. The constant of the hyperfine interaction with the 27Al nucleus was (4.0±0.7)×10-4 cm-1. The hyperfine initeraction tensor for one of the 29Si nuclei was found to be axially symmetric and its principal values were detemined: A⊥=41.6×10-4 and A||= 62.5×10-4 cm-1. The densities of the wave function of the unpaired electron at each of the 29Si atoms(~24%) of which 15% is in the s state and 85% in the p state) and at 27Al(0.3%) were found. An analysis of the results obtained led to the conclusion that the H5 center consists of a divacancy and an interstitial aluminium atom located in a {110} plane. The unpaired electron is located on an extended orbital of the divacancy (representing about 50% of the wave funcrion densiry.
- 408. Sov. Phys. Semicond. 18, 162 (1984) , “Problem of the charge state of manganese impurities in GaAs:Mn”, D. G. Andrianov, Yu. A. Grigor'ev, S. O. Klimonski?, A. S. Savel'ev, S. M. Yakubenya
- 409. Sov. Phys. Semicond. 18, 49 (1984) , “Influence of rare-earth elements on the carrier mobility in epitaxial InP and InGaAs films”, N. T. Bagraev, L. S. Vlasenko, K. A. Gatsoev, A. T. Gorelenok, A. V. Kamanin, V. V. Mamutin, B. V. Pushny, V. K. Tibilov, Yu. P. Tolparov, A. E. Shubin
- 410. Solid State Commun. 51, 127 (1984) , “Carbon and Oxygen Isotope Effects in the 0.79 eV Defect Photoluminescence Spectrum in Irradiated Silicon ”, K. Thonke, G. D. Watkins$ and R. SauerThe 0.79 eV photoluminescence spectrum known to emerge in oxygen-rich irradiated silicon is studied in 13C and 18O enriched crystals. The peincipal no-phonon transition at 0.79 eV splits onto a doublet in the 13C enriched sample in a way directly demonstrating that one carbon atom per center is optically active. In contrast, no isotope effects are observed in the local mode replicicas. Doping the silicon with 18O slightly influences two local mode replicas giving the first direct evidence that oxygen is involved in the defect. (Read more)
- 411. Solid State Commun. 51, 665 (1984) , “ESR of Selenium Pairs (Se+2) in Silicon”, R. Wrner, O. F. Schirmer.A slight anisotropy of the Se+2 ESR is resolved, revealing [111] axial symmetry. The pair groundstate is a2u in D3d symmetry, consistent with the almost complete s-character at the Se sites. The value of g|| is correlated with the binding energy of... (Read more)
- 412. Solid State Commun. 51, 951 (1984) , “Electron Paramagnetic Resonance of a Nitrogen-Related Centre in Electron Irradiated Silicon”, M. Sprenger, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanThe observation by electron paramagnetic resonance of a centre related to nitrogen as an impurity in silicon is reported. While all previously reported nitrogen-related centres in silicon were produced by nitrogen implantation, the present centre is observed after electron irridiation of... (Read more)
- 413. phys. stat. sol. (a) 82, 235 (1984) , “Nature of Thermal Donors in Silicon Crystals”, M. Suezawa, K. SuminoThe formation process of thermal donors in Czochralski-grown silicon crystals at 471.3 ℃ is studied by means of the optical absorption at a low temperature. The development of six kinds of thermal donors, termed TD-1 through TD-6, is followed separately. Experimental results obtained are analyzed... (Read more)
- 414. phys. stat. sol. (a) 82, 533 (1984) , “The Effect of Heat Treatment on Compensated CZ Silicon”, P. I. Baranskii, V. M. Babich, N. P. Baran, A. A. Bugay, Yu. P. Dotsenko, V. B. Kovalchuk.Thermally induced donors in Czochralski-grown p-Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed. (Read more)
- 415. phys. stat. sol. (a) 86, 313 (1984) , “New EPR Defects in Si<Al>”, A. V. Dvurechenskii, B. P. Kashnikov, V. V. Suprunchik.Two new paramagnetic centres, labeled Si-H5 and Si-H6 are found in silicon containing aluminium (6 × 1017 to 5 × 1018 cm-3) and irradiated with high dose of 1 Me V electrons (up to 2 × 1020 cm-2). Spin-Hamiltonian constants of the Si-H5... (Read more)
- 416. Phys. Rev. Lett. 52, 1814 (1984) , “Microscopic Theory of Atomic Diffusion Mechanisms in Silicon ”, Roberto Car*, Paul J. Kelly?, Atsushi Oshiyama?, and Sokrates T. PantelidesWe report self-consistent Green's-function total-energy calculations which provide, for the first time, a firm theoretical framework for understanding the microscopic mechanisms of atomic diffusion in Si. We find that the self-interstitial has negative-U properties, roughly the same formation energy... (Read more)
- 417. Phys. Rev. Lett. 52, 851 (1984) , “Optical Properties of As-Antisite and EL2 Defects in GaAs”, B. K. Meyer, J.-M. Spaeth, M. SchefflerThis Letter reports the first application of an ESR-tagged magnetic circular dichroism measurement to a paramagnetic deep-level defect in a semiconductor. In semi-insulating GaAs two new absorption bands are found at 1.05 and 1.29 eV. Both bands are identified as intracenter electronic transitions... (Read more)
- 418. Phys. Rev. Lett. 53, 1187 (1984) , “Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAs”, D. M. Hofmann, B. K. Meyer, F. Lohse, and J. -M. SpaethThis Letter reports on the first optically detected electron-nuclear double-resonance (ENDOR) measurements of a paramagnetic semiconductor defect in which ligand hyperfine interactions could be resolved. In semi-insulating GaAs: Cr the ENDOR lines of the first-shell 75As neighbors of the... (Read more)
- 419. Phys. Rev. Lett. 53, 1364 (1984) , “Observation of Co-Dimer Formation during Thermal Annealing of Co-Implanted Si ”, G. Langouche, M. de Potter, and D. SchroyenThe formation of Co dimers is observed in a Mössbauer-spectroscopy study of the thermal annealing of Co-implanted Si. The amount of dimers is found to depend strongly on the annealing temperature, on the implantation dose, and on the Si doping. At measuring temperatures between 4 and 300 K... (Read more)
- 420. Phys. Rev. B 29, 2819 (1984) , “Electron Paramagnetic Resonance of Pt- in Silicon: Isolated Substitutional Pt Versus Pt-Pt Pairs”, R. F. Milligan, F. G. Anderson, G. D. Watkins.We report a study of the EPR line shape for Pt- in silicon as a function of the relative abundance of the magnetic (I=1/2) isotope 195Pt. The structure recently noted by Henning and Egelmeers [Phys. Rev. B 27, 4002 (1983)] is insensitive to the 195Pt abundance and... (Read more)
- 421. Phys. Rev. B 30, 2260 (1984) , “Theory of electronically stimulated defect migration in semiconductors ”, Sokrates T. Pantelides, Atsushi Oshiyama*, Roberto Car?, and Paul J. Kelly?We develop a theory for carrier-capture-enhanced, recombination-enhanced, and athermal defect migration in semiconductors. Contrary to assumptions made recently in describing such processes in Si, we find that knowledge of energy levels or even total energies at only the initial equilibrium and... (Read more)
- 422. Phys. Rev. B 30, 4564 (1984) , “Electron Paramagnetic Resonance on Iron-Acceptor Pairs in Silicon”, J. J. van Kooten, G. A. Weller, and C. A. J. AmmerlaanExperimental data obtained by electron paramagnetic resonance on silicon doped with aluminum and iron are presented. After quenching the sample and a short stay at room temperature, two spectra, labeled Si-NL27 and Si-NL28, were observed. It is concluded that the spectra originate from two Fe-A1... (Read more)
- 423. Phys. Rev. B 30, 6292 (1984) , “Electron Nuclear Double Resonance of Interstitial Iron in Silicon”, S. Greulich-Weber, J. R. Niklas, E. R. Weber, J. -M. Staeth.We report on the first electron nuclear double-resonance investigation of an interstitial deep-level defect in silicon. For interstitial iron the superhyperfine interactions with six shells of neighbor nuclei comprising 42 silicon atoms could be resolved and determined. The localization of the two... (Read more)
- 424. Phys. Rev. B 30, 931 (1984) , “Optical-pumping study of spin-dependent recombination in GaAs”, Daniel PagetOptical-pumping techniques provide a convenient way to study-dependent recombination (SDR) processes at deep impurity centers in semiconductors. Indeed, by changing the polarization of excitation light, it is possible to modify the photoelectron spin polarization in a controlled way. This produces a... (Read more)
- 425. Nucl. Instrum. Methods Phys. Res. B 1, 427-430 (1984) , “Fast neutron damage in tetrahedral ANB8−N Compounds: Effects of ionicity”, A. Goltzene, B. Meyer , C. SchwabIrradiation of crystals with neutrons of high energy leads to the formation of different types of defects, such as point defects or extended defects, like clusters or even amorphous regions in the displacement spike. Their nature and their creation yields depend on the chemical nature of the... (Read more)
- 426. Jpn. J. Appl. Phys. 23, 1594 (1984) , “DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy”, Masami Tachikawa, Masashi Mizuta, Hiroshi KukimotoDeep levels, the so-called DX centers, in the AlxGa1-xAs alloy system grown by liquid-phase epitaxy (LPE) were investigated by junction-capacitance spectroscopy. The dependence of the activation energy of the DX center in Sn-doped... (Read more)
- 427. J. Phys. Chem. 88, 5255-5260 (1984) , “Dynamic Interchange among Three States of Phosphorus (4+) in ?-Quartz. 2.”, Y. Uchida, J. Isoya, J. A. WeilThe dynamic process due to electron jumping among three states with different sp hybrid directions in the quasitetrahedral P4+ center [PO4]0 in a-quartz has been investigated by 10-GHz electron paramagnetic resonance, over the temperature range 40 to 400 K. The relative populations (mole fractions ƒІ and ƒІІ) of the ground state P(І) and two degenerate thermally excited states P(ІІ) were determined from the measured EPR absorption line intensity ratios and from the line positions of the averaged state P(A), respectively, in the slow and fast kinetic regions. The temperature dependence of the mole fractions has been explained by considering vibrational sublevels in the potential well describing each state. The jump rate was also obtained, via EPR absorption line-width analysis based on the Bloch equations, in both the slow and the fast regions. The characteristic parameters of the dynamic process, Le., energy separation and vibrational sublevels of the ground and excited states, and barrier height between these, have been determined. (Read more)
- 428. J. Phys. C: Solid State Phys. 17, 2943 (1984) , “ODMR of recombination centres in crystalline quartz”, W Hayes, M J Kane, O Salminen, R L Wood and S P DohertyThe well known 2.8 eV luminescence band in quartz has been studied using optically detected magnetic resonance (ODMR). A triplet state with a very large fine-structure splitting is found to contribute to the emission. The principle axes of the triplet are identified. The possibility that the... (Read more)
- 429. J. Phys. C: Solid State Phys. 17, L233 (1984) , “Persistent spectral hole burning of colour centres in diamond”, R. T. Harley, M. J. Henderson, R. M. MacfarlaneFour zero-phonon lines of defect centres in diamond (GR1 (741 nm), N-V (637 nm), H4 (496 nm) and N3 (415 nm)) have been shown to exhibit persistent spectral hole burning. The phenomenon appears to be a rather general one in diamond and should prove very powerful for elucidation of the nature of... (Read more)
- 430. J. Phys. C: Solid State Phys. 17, L911 (1984) , “ENDOR Investigation of Se+ in Silicon”, S. Greulich-Weber, J. R. Niklas, J. -M. Spaeth.Se+ donors in silicon from deep level impurities. They were investigated with electron nuclear double resonance (ENDOR). The superhyperfine (SHF) interactions with eight shells of 29Si neighbour nuclei were analysed and it was confirmed that the electron spin is... (Read more)
- 431. J. Non-Cryst. Solids 66, 133-138 (1984) , “Local order and defects in MBE-grown a-GaAs”, S. G. Greenbaum, D. J. Treacy, B. V. Shanabrook, J. Comas and S. G. BishopElectron spin resonance (ESR), and 71Ga and 75As nuclear magnetic resonance (NMR) measurements have been performed on a 20μ thick film of a-GaAs deposited on a SiO2 substrate by molecular beam epitaxy. The ESR spectrum exhibits the four-line S=1/2, I=3/2 hyperfine pattern characteristic of the... (Read more)
- 432. J. Appl. Phys. 55, 3495-3499 (1984) , “Hole traps and trivalent silicon centers in metal/oxide/silicon devices”, P. M. Lenahan and P. V. DressendorferWe report electron spin resonance (ESR) measurements of E-center (a ``trivalent silicon'' center in SiO2) density as well as capacitance versus voltage (C-V) measurements on -irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of... (Read more)
- 433. J. Appl. Phys. 55, 825 (1984) , “Early stages of oxygen segregation and precipitation in silicon”, A. Bourret, J. Thibault-Desseaux, and D. N. SeidmanThe early stages of oxygen segregation at dislocation and precipitation in the bulk have been investigated by high-resolution electron microscopy in Czochralski grown silicon. Two kinds of precipitates are observed: a crystalline silica phase, coesite, and an amorphous phase. Both forms coexist... (Read more)
- 434. J. Appl. Phys. 55, 852 (1984) , “Stress relaxation in unirradiated and in helium ion bombarded glass plates: Dimensional stability”, William PrimakThe deformation of thin glass plates during bombardment with 140-keV He + ions was measured with an external capacitor. The contour of the plates was determined interferometrically before irradiation, after irradiation, and after aging for several years. These results showed that the... (Read more)
- 435. J. Appl. Phys. 56, 1670 (1984) , “Oxygen-related thermal donors in silicon: A new structural and kinetic model”, A. Ourmazd and W. Schr?ter and A. BourretA structural model for the oxygen-related thermal donors produced at moderate temperatures (<500 °C) is presented, where electrical activity commences with clusters containing five or more oxygen atoms and arises from a silicon atom at the center of the cluster. The donor activity of a... (Read more)
- 436. J. Appl. Phys. 56, 2655 (1984) , “Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materials”, G. M. Martin, E. Estève, P. Langlade, and S. Makram-EbeidFast neutron irradiation of n-GaAs mainly induces two deep electron traps in the band gap. The first of these is referred to as EL6 and has an energy level at Ec 0.35 eV, where Ec is the conduction band minimum; the second one has a wide... (Read more)
- 437. J. Appl. Phys. 56, 2844-2849 (1984) , “Electronic traps and Pb centers at the Si/SiO2 interface: Band-gap energy distribution”, E. H. Poindexter, G. J. Gerardi, M. -E. Rueckel, P. J. Caplan, N. M. Johnson, D. K. BiegelsenEnergy distribution of Pb centers (·SiSi3) and electronic traps (Dit) at the Si/SiO2 interface in metal-oxide-silicon (MOS) structures was examined by electric-field-controlled electron paramagnetic resonance (EPR)... (Read more)
- 438. J. Appl. Phys. 56, 3394 (1984) , “Electron paramagnetic resonance spectroscopy of fast neutron-generated defects in GaAs”, A. Goltzene, B. Meyer, C. Schwab, S. G. Greenbaum, R. J. Wagner, T. A. KennedyA series of fast neutron-irradiated GaAs samples (neutron fluence range of 2×10152.5×1017 cm2) has been investigated by electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra at 9 GHz exhibit a broad (~1 kG) Lorentzian singlet at... (Read more)
- 439. Appl. Phys. Lett. 44, 228-230 (1984) , “Optically induced electron spin resonance and spin-dependent recombination in Si/SiO2”, B. HendersonIn state-of-the-art Si/SiO2 wafers the concentration of paramagnetic interface states (1010 cm2) is almost too low to be detected by electron spin resonance (ESR). This letter describes experiments which show that the ESR signal of singly occupied dangling bond... (Read more)
- 440. Appl. Phys. Lett. 44, 514 (1984) , “Infrared spectrum of interstitial oxygen in silicon”, Michael StavolaA stress-induced dichroism study of the 1106-cm1 and 515-cm1 modes of interstitial oxygen in silicon has been undertaken in order to assign the 515-cm1 mode. It has been found that the 515-cm1 mode is due to the symmetric stretching... (Read more)
- 441. Appl. Phys. Lett. 44, 907 (1984) , “Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs”, K. Elliott, R. T. Chen, S. G. Greenbaum, R. J. WagnerWe have identified the electron paramagnetic resonance (EPR) spectrum of the As on a Ga site (AsGa) defect in bulk undoped liquid encapsulated Czochralski grown GaAs. The intensity of the EPR signal can be correlated with the concentration of compensating carbon acceptors in the GaAs... (Read more)
- 442. Appl. Phys. Lett. 44, 96-98 (1984) , “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, P. M. Lenahan and P. V. DressendorferWe find that two paramagnetic ``trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures. Applied Physics Letters is copyrighted by The American Institute of Physics. ... (Read more)
- 443. Sov. Phys. Solid State 27, 1093 (1985) , “Electron Spin Resonance of Strain Probes in Gadolinium-Doped Silicon”, A. A. Buga?, V. E. Kustov, Yu. G. Semenov, V. I. Shakhovtsov, V. L. Shindich.The angular dependences of the ESR line width were studied for interstitial Fe0 and Mn0 in gadolinium-doped silicon. It was found that the addition of gadolinium causes considerable internal elastic deformations of the crystal. A theoretical calculation is given whereby the mean deformation charge density can be determined from the measured ESR line widths of strain--sensitive centers.
- 444. Sov. Phys. Semicond. 19, 1198 (1985) , “Nonorientable Divacancies in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.The electron spin resonance method was used in na investigation of heavily doped n-type silicon [phosphorus concentration NP = (2-10)×1018 cm-3] irradiated with reactor neutrons in doses 5×1017-4×1019 cm-2. In addition to the spectra of the familiar G7 (divacancy) and P3 (tetravacancy) centers, the investigated samples exhibited two new spectra denoted by H9 and H10. The parameters of the spin Hamiltonian of these spectra were determined. According to the results obtained, the H9 spectrum was due to nonorientable divacancies located in zones of strong lattice deformation zones was ε ≥ 10-3. It was postulated that H10 is a vacancy-type defect with a paramagnetic electron localized on a broken bond of a silicon atom. Some of the characteristics of the P3 and P6 spectra observed for heavily doped n-type silicon indicated that the manifestation of these centers depends on the Fermi level position.
- 445. Solid State Commun. 53, 1135 (1985) , “Electron Paramagnetic Resonance on Shallow Acceptor Impurities in Silicon”, R. van Kemp, C. A. J. Ammerlaan.The shallow acceptor impurities boron, aluminum, gallium and indium in silicon were investigated by electron paramagnetic resonance (EPR) using a K-band superheterodyne spectrometer. The EPR spectra of these impurities were observed at low temperatures (1.4K < T < 4.2K) under conditions of zero and small values of external uniaxial stress. the observed angular dependence of the resonance lines can be analyzed using the effective spin Hamiltonian H = HB + Hε with J = 3/2 [1], HB = ?, Hε = ?. By making a least squares fit to the experimental data, the g-values g1' and g2' and the deformation potential parameters b' and d' were obtained. Under a variety of conditions peculiar line shapes and width were observed. We considered teh following mechanism to explain the observed characteristics of the resonance lines: double and triple quantum transitions, linear and quadratic effects of strain, dynamic Jahn-Teller distortion, transition probabilities and the effect of relaxation time on spin dynamics. Double and triple quantum transitions can occur in this system because j = 3/2. They can be recognized because their intensity is proportional to the square and the cube, respectively, of the microwave power. However, in the experiment no such dependence on the microwave power was found. The expressions thus obtained can account qualitatively for the line width and asymmetry when it is assumed that the strain distribution in the crystal is approximately Gaussian. These effects can not account for a peculiar narrow dip that is present in the centers of the resonance lines with ΔMj = 1 and ΔMj = 2 [2]. A dynamic Jahn-Teller distortion of the acceptor atoms would have result that there are no sites with strain zero. Together with the random strains present in the crystal, the effect will be a shift of intensity away from the magnetic field at which the center of the line occurs. Calculation of the transition probabilities for the ΔMj = 1, 2, 3 transitions showed that these do not become very small in any of the cases. An explanation of the dip in the center of the resonance line can be offered in the following way [3]. The broad resonance lines for the ΔMj = 1 and ΔMj = 2 transitions are a superposition of spin packets which are shifted due to the random internal strains. For small values of the strains, packets will overlap, allowing a form of cross-relaxation to occur. this results in broadening of the homofeneous width and smaller intensity at the centerof the resonance line. (Read more)
- 446. Rev. Sci. Instrum. 56, 2050 (1985) , “Application of a microwave preamplifier to an ESR spectrometer”, Günter GramppThe aim of this investigation was to measure the sensitivity improvement reached on a commercial homodyne X-band ESR spectrometer by installing a microwave GaAsFET type preamplifier (8.59.6 GHz). Up to a power level of 1 mW a factor of 3 was obtained in signal improvement.... (Read more)
- 447. Prog. Surf. Sci. 20, 9-103 (1985) , “Chemisorption and charge transfer at ionic semiconductor surfaces: Implications in designing gas sensors”, W. GopelA detailed atomistic understanding of charge transfer reactions between semiconductor surfaces and adsorbing particles is essential for designing gas sensors or metal-oxide catalysts.This will be demonstrated in a discussion of thermodynamically or kinetically controlled solid/gas interactions at... (Read more)
- 448. phys. stat. sol. (b) 130, K51 (1985) , “New EPR Spectrum in Helium-Implanted Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi, A. A. Kim.Recently /1 to 4/ a unique class of electron-vibronic photoluminescence spectra in silicon has been found. These spectra have been observed exclusively after noble gas (in particular, helium) ion implantation and partial annealing, above 200 ℃. Tkachev et al. /1, 3/ have suggested that noble gas... (Read more)
- 449. phys. stat. sol. (a) 92, K53 (1985) , “Low Symmetry Centre in Silicon”, A. V. Dvurechenskii, V. V. Suprunchik.Investigation of the defect formation in heavily doped silicon irradiated by high dose of electrons have led to the discovery of new types of defects /1, 2/. The present note is the next one of this series. A new centre is investigated in p-type silicon irradiated by neutrons. (Read more)Si| EPR neutron-irradiation| A5 C1 H8 P3 P6 Sii Vsi interstitial p-type triclinic vacancy .inp files: Si/H8/H8.inp | last update: Takahide Umeda
- 450. Phys. Rev. Lett. 55, 2204 (1985) , “Identification of the 0.82-eV Electron Trap, EL2 in GaAs, as an Isolated Antisite Arsenic Defect”, M. Kami?ska, M. Skowro?ski, W. KuszkoEL2 is a technologically important deep level in GaAs whose identification has been the subject of intense study. In this paper we present uniaxial stress and magnetic field experiments which establish for the first time that EL2 has tetrahedral symmetry and is, therefore, an isolated point defect.... (Read more)
- 451. Phys. Rev. Lett. 55, 2340 (1985) , “Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of EL2?”, G. A. Baraff and M. SchluterWe have used the Green's-function technique to carry out electronic-structure and total-energy calculations for the gallium vacancy in GaAs and for the nearest-neighbor (arsenic vacancy)-(arsenic antisite) pair which results when an adjacent arsenic atom hops over and fills the gallium vacancy. The... (Read more)
- 452. Phys. Rev. B 31, 5525-5528 (1985) , “Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon”, N. M. JohnsonExperimental results are presented which identify the following chemical reaction as being responsible for compensation of shallow-acceptor impurities when single-crystal silicon is exposed to monatomic hydrogen: A-+h++H0↔(AH)0, where A-... (Read more)
- 453. Phys. Rev. B 31, 5561 (1985) , “Donorlike excited states of the thermally induced 0.767-eV (P line) defect in oxygen-rich silicon ”, J. Wagner and A. D?rnen and R. SauerPhotoluminescence-excitation spectroscopy with a KCl: Tl color-center laser is performed on the thermally induced defect in oxygen-rich silicon which emits the 0.767-eV (P) no-phonon line. We find two sets of excited states. One set 20-30 meV above the P transition is identified with... (Read more)
- 454. Phys. Rev. B 32, 530 (1985) , “Muonium centers in GaAs and GaP ”, R. F. Kiefl, J. W. Schneider, H. Keller, W. K?ndig, W. Odermatt, and B. D. Patterson, and K. W. Blazey and T. L. Estle and S. L. RudazThe authors present the first observation of muon spin rotation for normal (Mu) and anomalous (Mu*) muonium centers in compound semiconductors, specifically GaP and GaAs. As in the elemental semiconductors, the muonium defect centers are characterized by a large isotropic hyperfine... (Read more)
- 455. Phys. Rev. B 32, 6571 (1985) , “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon”, P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel.Energy levels of defect states introduced by plastic deformation of n-type silicon have been studied by capacitance transient spectroscopy. From the observed properties of the defects, it is concluded that two different types of defects are produced. The first type is interpreted as point defects... (Read more)
- 456. Phys. Rev. B 32, 6965 (1985) , “Reduced g factor subband Landau levels in AlGaAs/GaAs heterosructures”, G. Lommer, F. Malcher, and U. RösslerThe reduction of the g factor of subband Landau levels in the n-inversion channel of AlGaAs/GaAs heterostructures, which has been observed in electron-spin-resonance experiments by Stein, von Klitzing, and Weimann [Phys. Rev. Lett. 51, 130 (1983)], can be explained quantitatively by the taking into... (Read more)
- 457. Phys. Rev. B 32, 7129 (1985) , “Electron-Nuclear Double Resonance of Titanium in Silicon: 29Si ENDOR”, D. A. van Wezep, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The Si-NL29 EPR spectrum, which is associated with the positive charge state of interstitial titanium in silicon, was investigated by electron-nuclear double resonance. Hyperfine-interaction parameters of 17 shells of silicon neighbors, comprised of 214 atoms, could be determined. These parameters... (Read more)
- 458. Phys. Lett. A 110, 157 (1985) , “EPR of Neutral Vacancy-Helium Centers in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevIn this letter we report the first observation by EPR of helium-associated defects in solid. Two new (S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and... (Read more)
- 459. Microscopic identification of electronic defects in semiconductors 453 (1985) , Materials Research Socirty Symposia Proceedings,Noble M. Johnson, Stephen G. Bishop, George D. Watkins , “Excitation spectroscopy on silicon using color center lasers : study of the thermally induced p line (0.767eV) defect”, J Wagner,A Dornen,R Sauer
- 460. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 461. Mater. Res. Soc. Symp. Proc. 46, 237 (1985) , “ENDOR-Investigation of Al++ and Al++-Al- Pairs in Silicon”, J. R. Niklas, J. M. Spaeth, G. D. Watkins.With Electron Nuclear Double Resonance (ENDOR) ligand superhyperfine (shf) interactions were investigated for 7 neighbor shells of the interstitial Al++ center (Si-G18) and for 10 neighbor shells of the Al++-Al- pair center (Si-G19). All shells of the interstitial center exhibit undistorted Td symmetry confirming the defect model derived from earlier experiments. In the pair center the shf interaction of the Al++ with the neighboring Al nucleus shows a pure [111]-symmetry, also the shf interactions with the outer Si-neighbor shells exactly reflect this axial [111]-symmetry of the defect. The magnitude of the quadrupole interaction of the neighboring Al nucleus clearly shows, that this nucleus is a nearest neighbor of the Al++. From the angular dependence and the intensity ratios of ENDOR lines of the pair center it can be excluded that any additional impurity is associated with the Al++-Al- pair at least within the first 3 neighbor shells of the Al++. The influence of the Al- neighbor on the hyperfine axes of the first [111] Si-neighbors is negligible and is also remarkably small for the other Si-neighbors. The magnitudes of the ligand shf interactions gor the pair center are closely related to those of the Al++ center. A comparison of these values for both centers allows a definite assignment of the measured shf interactions to their corresponding neighbor shells for the Al++ center.
- 462. Mater. Res. Soc. Symp. Proc. 46, 263 (1985) , “Identity of the NL8 EPR Spectrum with Thermal Donors in Silicon”, K. M. Lee, J. M. Trombetta, G. D. Watkins.The effect of uniaxial stress on the NL8 EPR spectrum in 450℃ heat-treated silicon containing thermal donors (TD's) is described. Changes in the relative amplitudes of the NL8 spectral components are interpreted as arising from electronic redistribution between the differently oriented defects. These changes are consistant in sign and magnitude with those predicted for TD+ from observed stress effects on the TD IR and DLTS spectra.
- 463. Mater. Res. Soc. Symp. Proc. 46, 39 (1985) , “Electronic Defect Characterization”, H. G. Grimmeiss.Knowledge concerning the electronic properties of defects is crucial for the understanding of the behaviour of these defects in semiconductors. Considering the important role defects play in most currently used devices it is not surprising that a great number of different measurement techniques have been developed with the aim of not only quantitatively determining the electronic parameters but also of identifying the defect chemically and evaluating the local environment of such defects. In most cases this goal can not be achieved by applying only a single (defect property) measureing technique. In this paper an attempt is made, using two different examples. to show what achivements in defect characterization and identification can be obtained by combining two or more different measurement techniques. The first example is a single substitutional impurity, sulfur in silicon, while the second example deals with a more complex defect, the oxygen-vacancy center in silicon. In both cases a number of techniques such as different junction space charge measurements, Hall effect, absorption, ESR, photo-ESR, ENDOR photoconductivity, irradiaton and annealing processes, and even theory were used to study the defect. The advantages and limitations of various methodologies will be discussed.
- 464. Mater. Res. Soc. Symp. Proc. 46, 525 (1985) , “Electronic Ground State of Iron-Acceptor Pairs in Silicon”, C. A. J. Ammerlaan, J. J. van Kooten.Iron-acceptor impurity pairs, consisting of a positively charged iron ion trapped on an interstitial site in the vicinity of an ionized acceptor, in silicon were observed by electron paramagneric resonance for all common acceptor dopants (B, Al, Ga, In). The Zeeman splittings of these pairs, to which both spin and orbital momenta contribute, cover the range between 1.1 and 6.4. An interpretation of these spectroscopic spliting factors is presented, shich considers the effects of the crystal field - of cubic, axial, or lower symmetry - and of spin-orbit interaction on the 4F ground state of the iron ion in a (3d)7 configuration. It is not due to a dynamical Jahn-Teller effect. nor due to hybridization. Rather, it is proposed that a significant reduction, by about 80%, of the orbital magnetism arises from covalency.
- 465. Jpn. J. Appl. Phys. 24, 279 (1985) , “Solubility and Diffusion Coefficient of Oxygen in Silicon ”, Yoshiko Itoh and Tadashi NozakiThe solubility and diffusion coefficient of oxygen in silicon between 1000°C and 1375°C were examined by charged particle activation analysis with the 16O(3He, p)18F reaction, in which oxygen was activated with an equal probability over the depth of up to 250... (Read more)
- 466. Jpn. J. Appl. Phys. 24, L143 (1985) , “Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System”, Masashi Mizuta, Masami Tachikawa, Hiroshi Kukimoto, Shigeru MinomuraAn experimental result that the DX center appears in GaAs:Si and GaAsd:Sn under hydrostatic pressure of about 30 kbars has been obtained for the first time. This indicates clearly that the DX center in the AlGaAs alloy system is due to a substitutional donor itself (not a complex referred to as... (Read more)
- 467. JETP Lett. 42, 38 (1985) , “Nonresonant Spin-Dependent Conductivity in Silicon”, L. S. Vlasenko, V. A. Khramtsov.A nonresonant change has been discovered in the photoconductivity of irradiated silicon crystals in a weak magnetic field. This new effect is shown to result from a spin-dependent recombination of photoexcited carriers through triplet centers. A change in the photoconductivity in the absence of a resonant alternating magnetic field arises at anticrossing points of magnetic sublevels of triplet centers. (Read more)
- 468. J. Phys. C: Solid State Phys. 18, 2623 (1985) , “Magnetic resonance spectroscopy in semiconducting diamond”, C. A. J. Ammerlaan, R. van KempIn type-IIb semiconducting diamond an electron paramagnetic resonance spectrum, which is labelled C-NL1, is observed. For detection of the resonance low sample temperatures (T<4K) and the application of a large uniaxial stress (P approximately=1 GPa) are required. The spectrum can be analysed... (Read more)
- 469. J. Phys. C: Solid State Phys. 18, L967 (1985) , “Thermal donors in silicon: oxygen clusters or self-interstitial aggregates”, R C NewmanThere is a long-standing view that small aggregates of oxygen impurities in silicon produced by heat treatments at 450 degrees C are the defects that act as thermal donors. Recently it has been established that these treatments also lead to the generation of self-interstitials. It is now suggested... (Read more)
- 470. J. Electrochem. Soc. 132, 1707 (1985) , “Determination of Conversion Factor for Infrared Measurement of Oxygen in Silicon”, T. Iizuka, S. Takasu, M. Tajima, T. Arai, T. Nozaki, N. Inoue, and M. WatanabeA reliable conversion factor for the infrared absorptiometry of oxygen in silicon has been determined by round-robininfrared measurement followed by charged particle activation analysis with the 16O(3He,p)18F reaction. As for theround-robin samples, 70 dislocation-free CZ silicon wafers with oxygen contents ranging from 3 to 20 × 1017 at.-cm-3 andthicknesses of 2, 1, and 0.5 mm were carefully prepared by five organizations. A good linear relationship has been obtainedbetween the absorption coefficient and the oxygen content. The relationship is expressed as [oxygen concentration (at.-cm-3)] = (3.03 ± 0.02) × 1017 × [absorption coefficient (cm-1)]. (Read more)
- 471. J. Electrochem. Soc. 132, 3034 (1985) , “Quantitative Spectroscopy of Interstitial Oxygen in Silicon”, B. Pajot and H. J. Stein and B. Cales and C. NaudQuantitative data are presented on the infrared (IR) absorption of interstitial oxygen in oxygen-rich silicon using Fourier transform spectroscopy. Besides the wel-known and 1106 cm-1 room temperature IR bands, due to the symmetric and antisymmetric vibrations of the Si2O entity, respectively, three other bands at 1227, 1720, and 1013 cm-1 are reported, whose intensities are scaled with those of the 515 and 1106 cm-1 bands. The band at 1227 cm-1 has often been confused with an oxygen precipitate band observed at 1225 cm-1 in annealed silicon. Evidence is given that the 1227 cm-1 band is related to interstitial oxygen. It is also shown that another band at 1720 cm-1 is a combination of the antisymmetric mode of Si2O with a phonon combination of the silicon lattice. A weak band at 1013 cm-1 is reported for the first time, and it is attributed to an overtone of the 515 cm-1 mode. (Read more)
- 472. J. Appl. Phys. 24, L689 (1985) , “Photo-Electron Paramagnetic Resonance Study of AsGa Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry”, Noriaki Tsukada, Toshio Kikuta, Koichi IshidaThe photoresponses of the antisite defect AsGa+ electron paramagnetic resonance signal have been investigated in as-grown, undoped, semi-insulating GaAs crystals grown from melts of different As atoms fractions. The observed photoresponses are well explained by assumting... (Read more)
- 473. J. Appl. Phys. 57, 1523 (1985) , “Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers”, Osamu Ueda, Kiyohide Wakao, Akio Yamaguchi, Shoji Isozumi, and Satoshi KomiyaRapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photoluminescence topography and transmission electron microscopy. 100" align="middle">-dark-line defects and 110" align="middle">-dark-line defects... (Read more)
- 474. J. Appl. Phys. 57, 1783 (1985) , “Annealing kinetics of the gold-iron complex in silicon”, S. D. Brotherton, P. Bradley, and A. GillGold and iron are known to interact in silicon at temperatures below ~400 °C to form gold-iron pairs with band-gap energy levels of Ev +0.434 eV and Ec 0.354 eV. In this work, the details of the formation and dissociation of these pairs... (Read more)
- 475. J. Appl. Phys. 57, 5176 (1985) , “Damage center formation in SiO2 thin films by fast electron irradiation”, R. L. PfefferThe concentrations of E centers (ESR-active oxygen vacancies) produced by 30160 keV electron irradiation have been measured in thermal SiO2 films at doses far exceeding any previously reported. The dependences of these concentrations on electron energy and fluence were... (Read more)
- 476. J. Appl. Phys. 58, 2448 (1985) , “Thermal strain-induced degradation mechanism in the visible AlGaAs/GaAs laser”, M. Ikeda, O. Ueda, S. Komiya, and I. UmebuWe fabricated and life-tested visible AlGaAs/GaAs channeled-substrate-planar-type lasers and found that some are degraded within 100 h of operation. We investigated these using photoluminescence and transmission electron microscopic images. The characteristic features in photoluminescence images are... (Read more)
- 477. J. Appl. Phys. 58, 3996 (1985) , “Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy”, Osamu Ueda, Kiyohide Wakao, Satoshi Komiya, Akio Yamaguchi, Shoji Isozumi, and Itsuo UmebuCatastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray... (Read more)
- 478. Defects and defect processes in nonmetallic solids 1-464 (1985) , John.Wiley and sons , W. Hayes, A.M. Stoneham. WileyCHAPTER1. Electronic Properties CHAPTER2. Interatomic Forces and Atomic Motions CHAPTER3. Lattice Defects CHAPTER4. Spectroscopy of Solids CHAPTER5. Electronic Properties of Point Defects CHAPTER6. Radiation-Induced defect processes CHAPTER7. Properties of Surfaces CHAPTER8. Special Systems APPENDIX: Notation for Defects PHYSICAL CONSTANTS; Units and Conversion Factors SUPPLEMENTARY READING REFERENCES INDEX
- 479. Appl. Phys. Lett. 46, 781 (1985) , “Photoresponse of the AsGa antisite defect in as-grown GaAs”, M. Baeumler, U. Kaufmann, and J. WindscheifThe photoresponse of the As + Ga" align="middle"> antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown semi-insulating GaAs as a function of illumination time and photon energy h. The As + Ga" align="middle"> EPR signal intensity... (Read more)
- 480. Appl. Phys. Lett. 46, 787 (1985) , “Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon”, N. M. Johnson and M. D. MoyerIt was recently proposed that hydrogen compensation of shallow-acceptor impurities in single-crystal silicon is due to the diffusion of both monatomic oxygen and hydrogen into silicon which combine at acceptor sites to form neutral acceptor-OH complexes. It is shown here that oxygen does not diffuse... (Read more)
- 481. Appl. Phys. Lett. 46, 882 (1985) , “Atomic deuterium passivation of boron acceptor levels in silicon crystals”, J. C. Mikkelsen, Jr.B-doped Si wafers were subjected to atomic-deuterium (D) plasmas to simulate the reactions of atomic hydrogen with substitutional B acceptor levels. Secondary ion mass spectrometry was used to profile the in- and out-diffusion of D, and spreading resistance was used to measure the distribution of... (Read more)
- 482. Appl. Phys. Lett. 47, 970 (1985) , “Identification of EL2 in GaAs”, H. J. von Bardeleben, D. Stievenard, J. C. Bourgoin, A. HuberCombining electron paramagnetic resonance under optical excitation, deep level transient spectroscopy, electron irradiation, annealing, and quenching on LEC semi-insulating GaAs and lightly Si-doped material grown in the same way as the semi-insulating material, we have shown that (i) the irradiated... (Read more)
- 483. Superlatt. Microstruct. 2, 273-278 (1986) , “Electron states in GaAs/Ga1−xAlxAs heterostructures: Subband Landau-levels*1”, G. Lommer, F. Malcher and U. R?sslerNonparabolicities (3,4) of the bulk band structure are taken into account in the calculation of subband Landau-levels in the n-inversion layer of GaAs/Ga1−xAlxAs heterostructures. We calculate the deviation of the cyclotron mass from the isotropic parabolic band case (2) for magnetic fields... (Read more)
- 484. Sov. Phys. Solid State 28, 1862 (1986) , “Electron States Having Spin S ≥ 1 at Dislocations in Silicon”, M. N. Zolotukhin.The kinetics of restoration of the ESR spectrum fine structure lines in silicon crystals containing dislocations is the same for bound spins at dislocations as for the ESR dark spectrum of broken (dangling) bonds at dislocations after illumination of the crystal has ended. It is of the barrier type and is controlled by hole capture at the broken-bond level. The fine structure of the dislocation ESR spectrum is determined by the defect structure of the dislocations, which depends considerably on the way in which they were formed in the crystals.
- 485. Sov. Phys. Semicond. 20, 688 (1986) , “Spin-Dependent Recombination and Low-Frequency ESR Spectroscopy of Impurities and Defects in Silicon”, L. S. Vlasenko, V. A. Khramtsov.the change in the photoconductivity of silicon crystals due to saturation of ESR transition in paramagnetic recombination centers was used to record the ESR spectra of radiation defects in weakly irradiated silicon crystals. The ESR spectra of samples with defect concentration below 1012 cm-3 were recorded on the basis of a change in the Q factor of the spectrometer resonator because of a change in the photocarrier density at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photocarrierdensity at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photoconductivity of the samples were detected in the absence of a resonance alternating field at values of a static magnetic field corresponding to the points of intersection of magnetic sublevels of the paramagnetic centers with spin S > 1/2. The proposed experimental method was used to record a number of new ESR spectra of irradiated silicon crystals.
- 486. Sov. Phys. JETP 64, 612 (1986) , “Spin-Dependent Effects Due to Triplet Centers in Irradiated Silicon”, L. S. Vlasenko, M. P. Vlasenko, V. N. Lomasov, V. A. Khramtsov.A study has been made of the optical polarization of nuclei and spin-dependent photoconductivity in silicon crystals containing structural defects which are in excited triplet states when illuminated, with a nonequilibrium distribution of the populations of magnetic sublevels. Mixing of triplet states differing iin spin projection is necessary for the onset of an optical polarization of nuclei as the nuclei participate in a hyperfine interaction with the triplet centers. A correlation is found between the angular distribution and the temperature dependence of the intensities of the ESR lines of triplet centers and of the degree of optical polarization of the nuclei. It is shown that the saturation of the ESR transition of the triplet centers leads to a change in the photoconductivity of silicon crystals. A similar change in photoconductivity is obsserved at anticrossing of the magnetic sublevels of triplet centers.
- 487. Sov. Phys. Solid State 28, 1862 (1986) , “Electron states having spin S ≥ 1 at dislocations in silicon”, M. N. Zolotukhin
- 488. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 489. Solid State Commun. 58, 811 (1986) , “ESR Investigation of MnCu Pairs in Silicon”, H. Dietrich, H. Vollmer and R. LabuschThe new ESR spectra are observed after co-diffusion of Mn and Cu in Si. The experimentally observed spins are interpreted as (MnCu)+ and (MnCu)−-pairs with axial (1 1 1)-symmetry. To our knowledge these are the first ESR-identified, Cu-related centres in silicon. (Read more)
- 490. Solid State Commun. 60, 867-870 (1986) , “Antisite defects in plastically-deformed GaAs: An alternative analysis”, R. BrayA revision is presented of the accepted view that the observed increease in electron paramagnetic resonance (EPR) with plastic deformation in GaAs is due to the generation of As antisite defects. It is proposed instead that only compensating deep acceptor defects are generated. The increase of the... (Read more)
- 491. Solid State Commun. 60, 871-872 (1986) , “The formation of arsenic antisite defects during plastic deformation of GaAs”, E. R. WeberThe electron paramagnetic resonance (EPR) signal of arsenic antisite defects increases after plastic deformation of GaAs. This has been attributed in the preceeding paper to the formation of only compensating acceptors rather than additional antisites. A critical discussion of this alternative model... (Read more)
- 492. phys. stat. sol. (b) 138, 337 (1986) , “A Silicon-Gold Pair in Silicon Investigated by EPR”, M. Höhne.A new gold-related defect in silicon is observed after IR irradiation. Though a thermal treatment including additional doping with lithium is necessary for the production of this centre, the lithium obviously does not participate in the paramagnetic state. The paramagnetic state is mainly localized... (Read more)
- 493. Phys. Rev. Lett. 57, 611 (1986) , “Thermal Donors in Silicon: A Study with ENDOR”, J. Michel, J. R. Niklas, and J. -M. SpaethENDOR experiments on paramagnetic thermal donors are presented for the first time. They show that the ESR spectra of all thermal donors identified by ir bands are superimposed in one narrow line ("NL8"). Only 29Si superhyperfine interactions were found and determined for up to seven... (Read more)
- 494. Phys. Rev. B 33, 2890 (1986) , “Identification of the arsenic vacancy defect in electron-irradiated GaAs”, H. J. von Bardeleben and J. C. BourgoinWe report the systematic observation of a new electron-paramagnetic-resonance spectrum in a wide series of electron-irradiated GaAs crystals. The spectrum consists of a partially resolved multiplet of 700-G linewidth and an effective g factor of 2.00 for B∥[001] and 2.04 for B∥[110]. Comparison... (Read more)
- 495. Phys. Rev. B 33, 4320 (1986) , “DX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAs”, Atsushi Oshiyama, Shuhei OhnishiA new microscopic model for the origin of the DX center in Si-doped AlxGa1-xAs is proposed based on discrete variational X? cluster calculations. The calculated level structure shows that the antibonding A1 state of Si, which lies in the conduction bands as a... (Read more)
- 496. Phys. Rev. B 33, 4471 (1986) , “Strain broadening of the dangling-bond resonance at the (111) Si-SiO2 interface”, K. L. BrowerIt is observed that the linewidth and line shape of the Zeeman resonance associated with dangling bonds at the (111)Si-SiO2 interface (Pb centers) vary with the direction of the applied magnetic field. An analysis of the line shape of this resonance indicates that it can be... (Read more)
- 497. Phys. Rev. B 33, 5880 (1986) , “Antisite-related defects in plastically deformed GaAs”, P. Omling, E. R. Weber, L. SamuelsonOptical absorption measurements on plastically deformed GaAs show that the total extrinsic absorption increases with deformation, while the quenchable EL2 absorption stays constant. The nonquenchable extrinsic absorption is observed to be proportional to the EPR measured AsGa containing... (Read more)
- 498. Phys. Rev. B 34, 1360 (1986) , “Identification of the arsenic-antisite-arsenic-vacancy complex in electron-irradiated GaAs”, H. J. von Bardeleben, J. C. Bourgoin, and A. MiretWe report the observation by electron paramagnetic resonance of a new irradiation-induced defect in n-type GaAs. It is characterized by the spin Hamiltonian parameters S=1 / 2, g=1.97±0.06, A=0.068±0.004 cm-1, I=3 / 2 (100%) and attributed to the complex formed by an... (Read more)
- 499. Phys. Rev. B 34, 1381 (1986) , “Paramagnetic Resonance of a New-Oxygen-Donor Related Center in Silicon”, R. W?rner and O. F. SchirmerIn Czochralski-grown silicon annealed in the temperature range between 650 and 800 ?C, an anisotropic electron-spin resonance (ESR) spectrum was observed. Analysis of the angular dependence reveals monoclinic (Cs) symmetry of the representative g tensor, with one of the principal axes... (Read more)
- 500. Phys. Rev. B 34, 3610 (1986) , “Dipolar Interactions between Dangling Bonds at the (111) Si-SiO2 Interface”, K. L. Brower, T. J. Headley.In this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
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