The driving force of stacking-fault expansion in SiC p–i–n diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the... (Read more)

We report the identification of the vacancy-hydrogen complex in single crystal diamond synthesized by chemical vapor deposition. The S = 1 defect is observed by electron paramagnetic resonance in the negative charge state. The hydrogen atom is bonded to one of the carbon atoms neighboring the... (Read more)

N-type 6H–SiC samples irradiated with electrons having energies of E_e = 0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E_e0.3 MeV,... (Read more)

We report the formation processes of interface dangling bonds (P_b centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the P_b center... (Read more)

The mechanism of hydrogen release from the anode Si/SiO₂ interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect... (Read more)

Electron paramagnetic resonance and electron nuclear double resonance (ENDOR) experiments on ZnO nanoparticles reveal the presence of shallow donors related to interstitial Li and Na atoms. The shallow character of the wave function is evidenced by the multitude of ⁶⁷Zn ENDOR lines and... (Read more)

Hole burning in and displacements of the magnetic-resonance absorption line of the electron spin of the shallow hydrogen-related donor in ZnO are observed upon resonant irradiation with microwaves at 275 GHz and at 4.5 K in a magnetic field of 10 T. These effects arise from an almost complete... (Read more)

The utility of diamond as an electronic material is compromised by the lack of a suitable shallow donor. Here, ab initio theory is used to investigate the donor levels of substitutional pnictogen (N, P, As, and Sb) and chalcogen (S, Se, and Te) impurities and chalcogen-hydrogen defects in... (Read more)

The role of mobile interstitial oxygen atoms (O⁰) in defect processes in oxides is demonstrated by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO₂ glass. Superstoichiometric O⁰ was created by F₂ laser photolysis of the... (Read more)

We report the observation of a paramagnetic interface defect in thermally oxidized porous n-type doped 4H–SiC/SiO₂. Based on its axial symmetry and resolved hyperfine interactions it is attributed to an sp³ carbon dangling bond center situated... (Read more)

The longitudinal and transverse thermomagnetic Nernst–Ettingshausen (LNE, TNE) effects and the Maggi–Reghi–Leduc (MRL) effect were measured on PbTe and PbSe micro-samples at ultrahigh pressures upto 20 GPa. Values of the mobility of charge carriers as well as the scattering parameter were estimated both for the low- and high-pressure phase of PbTe and PbSe. At about 3 GPa, the maxima of both Nernst–Ettingshausen effects and magnetoresistance (MR) (and hence of the mobility of charge carriers μ), attributed to the gapless state of PbTe and PbSe were established. The TNE effect was found to be the largest among the effects measured, while the MRL was hardly visible even at the highest mobility values of the charge carriers. The possibilities for using thermomagnetic effects in micro-device technologies are discussed. (Read more)

We prepare a microwave electron spin resource (ESR) cavity for detecting a response from a 2DEG in an n-AlGaAs/GaAs. The response is obtained as a change in the longitudinal resistance (Δρ_xx) in v=3 quantum Hall region, particularly as a peak in Δρ_xx for resonance. We use the data of ESR to evaluate the g-factor and the lower bound for dephasing time. The resonance magnetic field suffers from nuclear spin effects via the hyperfine coupling, resulting in the ESR peak shift. We find the ESR peak shift or Overhauser shift decays with two time constants, suggesting the existence of two different origins for the relaxation. (Read more)

High temperature Hall effect and resistivity measurements have been made on undoped, high purity semi-insulating (HPSI) 4H SiC samples. Both physical vapor transport and high temperature chemical vapor deposition grown samples have been investigated. Resistivity measurements before and after... (Read more)

The designs of W-band (~95 GHz) Fabry–Pérot microwave resonators for optically detected electron paramagnetic resonance (ODEPR) and electron nuclear double resonance (ODENDOR) as well as the ODEPR/ODENDOR spectrometer are described. The Fabry–Pérot resonator was... (Read more)

The designs of W-band (~95 GHz) Fabry–Pérot microwave resonators for optically detected electron paramagnetic resonance (ODEPR) and electron nuclear double resonance (ODENDOR) as well as the ODEPR/ODENDOR spectrometer are described. The Fabry–Pérot resonator was... (Read more)

It is shown that irradiation of Ni-SiC structures with protons at elevated temperatures promotes metallurgical reactions at the Ni-SiC interface owing to a diffusion mechanism stimulated by the generation of radiation defects. The most pronounced effect of mixing at the metal-semiconductor interface is observed if the thickness of the metal film is equal to the projected range of protons. (Read more)

High quality ZnO single-crystal films were doped with copper by thermal diffusion, and their luminescent properties were studied by cathodoluminescence spectroscopy. Doping with copper increases the intensity of the green-emission band of the cathodoluminescence spectrum, whose peak, width, and shape at 78 and 300 K remain unchanged. At 4.2 K, a pronounced phonon structure with a phonon energy of 72 meV is detected in the cathodoluminescence green-emission band of the doped samples. In this case, the phonon peaks feature a triplet fine structure instead of the doublet one generally observed. This feature is attributed to radiative recombination of acceptor excitons that are localized at copper atoms and interact with each one of the subbands of the ZnO valence band. An analysis of the experimental data on the film cathodoluminescence and comparative studies of luminescence and electron spin resonance in single crystals allow one to conclude that the uncontrollable copper impurity typically existing in ZnO is responsible for green-emission luminescence in this material. (Read more)

A microwave (ca. 3 GHz) limiter, constructed using a GaAs PIN diode and microstrip impedance transformation circuit, limited 300-ns long 11-W microwave pulses to 70 mW at ca. 4.2 K. This limiter was implemented in a pulsed electron paramagnetic resonance (EPR) spectrometer to protect a low-noise microwave preamplifier from the high-power pulses. (Read more)

Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p ⁺-n-n⁺ diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions. (Read more)

Protons with energy E=100 keV were implanted with doses ranging from 2×10¹⁷ to 4×10¹⁷ cm^-2 into 6H-and 4H-SiC n-type samples at room temperature. The samples were subjected to various types of postimplantation heat treatment in the temperature range 550–1500°C. The parameters of the samples were studied by measuring the capacitance-voltage and current-voltage characteristics and by analyzing the photoluminescence spectra. Blistering on the surface of the sample is observed after annealing the samples at a temperature of 800°C only after implantation of protons with a dose of ≤3×10¹⁷ cm^-2. A decrease in the resistivity of the compensated layer sets in after annealing at a temperature of ∼1200°C and is completed after annealing at a temperature of ∼1500°C. A drastic decrease in the photoluminescence intensity is observed after implantation for all types of samples. Recovery of the photoluminescence intensity sets in after annealing at temperatures ≥800°C and is complete after annealing at a temperature of 1500°C. (Read more)

The pressure-induced phase transitions were studied in ZnTe by the thermoelectric power (S) technique. For the high-pressure trigonal phase P3₁21 cinnabar the large thermopower values S≈+400 correspond to semiconductor hole conductivity. During a transition into the orthorhombic structure Cmcm the value of S dropped by 40–50 times indicating metallic hole conductivity, like in the high pressure phases of other chalcogenides of II Group (HgSe, HgTe, CdTe) with Cmcm structure. In a transient region between the trigonal and orthorhombic phase (especially under decreasing pressure) a novel phase has been observed with a negative value of S. By analogy with other Zn and Cd chalcogenides whose NaCl phases have an electron type of conductivity the phase observed may have a NaCl structure. (Read more)

Trapping of migrating Si interstitials at substrate/epitaxial interfaces during high-energy Si ion bombardment has been observed. It shows that the interface of Si/Si layer, grown by molecular-beam epitaxy, is a strong sink for self-interstitials during MeV bombardment at room temperature. We... (Read more)

The properties of hydrogen in 3C and 4H type silicon carbide (SiC) are studied theoretically at the density functional level. We find that only singly positive or negative charge states of hydrogen are thermodynamically stable in SiC. The transition from the positive to the negative charge state... (Read more)

p-type doping of 6H-SiC was implemented by diffusion of boron at temperatures higher than 1900 °C. The doping profiles were clearly divided into steep (zone I) and long-tail (zone II) regions. The boron diffusions in both regions are well fitted by erfc... (Read more)

The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments... (Read more)

The formation and evolution of small cluster defects in 500 eV, 1×10¹⁵ cm^–2 boron-implanted silicon is investigated. These clusters are identified by high-resolution transmission electron microscopy (TEM) as small dislocation loops lying on {100} planes with an... (Read more)

From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer, an Al acceptor with ~200 meV and an unknown defect with ~370 meV are found. By irradiation with 4.6 MeV electrons, the Al acceptor density is reduced, while the unknown defect density... (Read more)

The electroluminescence, mobility, and core nature of partial dislocations bounding stacking faults in 4H silicon carbide p-i-n diodes were investigated using optical emission microscopy and transmission electron microscopy (TEM). The stacking faults developed and expanded in... (Read more)

Gallium nitride has been irradiated to two fluences with energetic Au²⁺ ions at 300 K. Two different damage levels and depth profiles were produced that are characterized by near-surface damage accumulation and deeper-regime damage saturation. Thermal annealing at 873 K resulted in... (Read more)

Room-temperature photoluminescence of porous hydrogenated amorphous silicon-carbon alloys (a-Si_1–xC_x:H) has been studied for different carbon concentrations. Porous a-Si_1–xC_x:H luminesces at energies much... (Read more)

The +1 charged state of an oxygen vacancy V(O)⁺ in α-quartz is found to be unstable with respect to the reaction 2V(O)⁺V(O)⁰ + V(O)²⁺, which lowers the total energy by 2.9 eV, making it highly unlikely that... (Read more)

Dominant hole traps of ferromagnetic Ga_1–xMn_xAs and epilayers with an Mn mole fraction of x2.2% and 4.4% were identified employing deep-level transient spectroscopy. Three hole traps with binding energies of E_A = 0.38±0.01 eV at... (Read more)

A deep energy level of bromine in the bandgap of GaAs was determined by means of Radiotracer deep-level transient spectroscopy (DLTS) measurements. For this purpose, the radioactive isotope ⁷⁷Br was implanted in p-type as well as in n-type GaAs. In the course of repeated... (Read more)

The redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×10¹⁴ cm^–3 and an oxide precipitate density of 5×10⁹ cm^–3. The concentrations of interstitial iron and... (Read more)

The silicon doping characteristics of Al_xGa_1–xN were investigated over the x = 0.2–0.5 composition range. A combination of Hall and capacitance–voltage measurements indicated a significant deepening of the Si level, as well as a systematic... (Read more)

It has been demonstrated that, by incorporating a thin ~20 nm Si_1–yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated.... (Read more)

A two-hydrogen interstitial complex (H2^**" align="middle">) in crystalline Si that exhibits metastability is proposed via first-principles total energy calculations. In its most stable state, H2^**" align="middle"> is 0.28 eV/H higher in energy than... (Read more)

The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in n-type GaN, we argue that the 70 meV donor... (Read more)

In the past, codoping by mixing donors with acceptors has been proposed to lower the dopant ionization energy. However, the level repulsion between donor and acceptor states is weak due to symmetry considerations. Here, we propose an innovative approach to lower the donor ionization energy by... (Read more)

We observed two paramagnetic defects in thin films of HfO₂ on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2^-" align="middle"> defect. A second spectrum is... (Read more)

The effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following... (Read more)

The electronic structure of trimer acceptor-donor complexes in silicon Si clusters is studied using the ab initio discrete variational-Xα molecular-orbital (MO) method. The trimer complexes In₂D (D = phosphorus P, arsenic As, antimony Sb, or bismuth Bi) consist of two... (Read more)

The mechanism underlying the exfoliation phenomenon in B+H coimplanted Si is presented. Compared with only H implantation, H-implanted Si samples that received a B preimplant were observed to have a decrease in implantation-induced lattice damage, in spite of enhanced blistering behavior, which was... (Read more)

The electrical activity of nitrogen as an acceptor in ZnO has been investigated in two ways. First, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy (MOVPE) yielding incorporation of nitrogen in the range 10¹⁶–10²¹ ... (Read more)

Defect state D (0.8 eV) was experimentally detected in Ta₂O₅ capacitors with ultrathin (physical thickness <10 nm) Ta₂O₅ films using zero-bias thermally stimulated current spectroscopy and correlated with leakage current. Defect state D can be more... (Read more)

First-principles total-energy calculations for hydrogen impurities in CuInSe₂ (CIS) and CuGaSe₂ (CGS) show that H⁺ takes up the Cu–Se bond center position, whereas H⁰ and H^– take up tetrahedral interstitial site next to In (in CIS) or... (Read more)

α-Ga₂S₃ and α-Ga₂S₃:Fe²⁺ single crystals were grown by the two-zone sublimation method. The optical energy gaps of α-Ga₂S₃ and α-Ga₂S₃:Fe²⁺ at 10 K were found to be... (Read more)

An unexpected physical phenomenon—dynamic recovery of negative bias temperature instability (NBTI)—is reported. NBTI degradation in p-type metal–oxide–semiconductor field-effect transistors is significantly (by ~40%) reduced after stress interruption. NBTI recovery... (Read more)

First-principles calculations carried out in 4H-SiC show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. The complex is very stable with respect to isolated positive donors and negatively charged hydrogen interstitials, so reactivation is... (Read more)

Nitrogen is a commonly observed impurity in natural and synthetic diamond, yet there are still many questions in regard to its incorporation in the material. In all three common forms of diamond: natural, high-pressure high-temperature synthetic, and chemical vapor deposition (CVD) diamond; nitrogen... (Read more)

The nature of the electron states associated with hydrogen in InN has been inferred by studying the behavior of positive muons, which mimic protons when implanted into semiconductors. The muons capture electrons below 60 K, forming paramagnetic centers with a binding energy of about 12 meV. Together... (Read more)

An analysis of fast and slow traps at the interface of 4H–SiC with oxides grown in O₂, N₂O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects... (Read more)

Organic monolayers were prepared on hydrogen-terminated (111) silicon surfaces by thermally induced hydrosilylation with alkenes. The electronic properties of the modified surfaces were studied by photoconductivity and spin-dependent photoconductivity measurements (electrically detected magnetic... (Read more)

Influences of point defects on the nonradiative processes in ZnO were studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement. Free excitonic PL intensity naturally increased with the increase in the... (Read more)

Gold-doped Hg_1–xCd_xTe samples of x = 0.2067 (in the very-long-wavelength infrared spectral band, with cutoff wavelengths ~13.2 µm at 77 K) were prepared by tellurium-melt liquid-phase epitaxy. The samples were doped with indium to... (Read more)

Electron spin resonance analysis of (100)Si/HfO₂ interfaces prepared by chemical vapor deposition of the oxide using three chemically different precursors reveals that the trivalent Si defects common for Si/SiO₂ interfaces—P_b0 and P_b1... (Read more)

Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 10¹⁸ cm^–3 with increasing N composition and decreases... (Read more)

Low-dose implantations with 65 Si and 150 keV Ge ions into the n⁺ top layer of Si n⁺p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transient spectroscopy. Results were compared to crystal-TRIM... (Read more)

Interface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D₂ annealing, conductance-frequency measurements, and electron-spin resonance measurements. D₂ annealing was shown to lower... (Read more)

A deep level transient spectroscopy (DLTS) study has been performed on a GaN n⁺-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect has been revealed within the interfacial region of the junctions by... (Read more)

Silicon wafers were preamorphized with 70 keV Si⁺ at a dose of 1×10¹⁵ atoms/cm², generating a deep amorphous layer of 1800 Å. Implants of 500 eV ¹¹B⁺, with and without 6 keV F⁺, followed at doses of 1×10¹⁵... (Read more)

Carbon-doped GaN layers grown by molecular-beam epitaxy are studied with photoluminescence and positron annihilation spectroscopy. Semi-insulating layers doped with >10¹⁸ cm^–3 carbon show a strong luminescence band centered at ~2.2 eV (yellow luminescence). The... (Read more)

Nominally undoped ZnO crystals were doped with Hg by implanting radioactive ¹⁹⁷Hg/¹⁹⁷Au atoms. After annealing at 1073 K, the photoluminescence (PL) spectra recorded at 1.6 K exhibit a Hg related band in the region between 3.28 and 2.85 eV. The sharp no-phonon line, which is... (Read more)

Positron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 10¹⁹ to below 10¹⁶ cm^–3, as the... (Read more)

Formation of a boron-related defect responsible for the 4B₀ emission line in the low-temperature photoluminescence spectrum of 4H SiC has been investigated. The 4B₀ luminescence was absent in as-grown epitaxial layers. This line appeared after hydrogenation along with other... (Read more)

Excitonic luminescence of GaN after irradiation with 0.42-MeV electrons has been investigated in detail. The low-energy irradiation generates damage exclusively in the N sublattice. Additional bound-exciton lines are found and are shown to arise from a hydrogenic donor with a binding energy... (Read more)

Carrier lifetime measurements have been used to characterize residual defects after low-energy implanting of silicon ions followed by high-temperature annealing (900 or 1000 °C). The implant was found to result in two distinct regions of lifetime-reducing damage. First, a high recombination... (Read more)

The impact of high-temperature neutron, electron, and γ-irradiations on the dark current of silicon p–i–n junctions is described in terms of a damage coefficient K_I. It is shown that this K_I is thermally activated and reduces... (Read more)

Electron spin resonance (ESR) analysis reveals that the versatile noncontacting corona biasing method frequently applied in the electrical analysis of Si/SiO₂-based structures is not a noninvasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of... (Read more)

The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies of both near-interface fixed-charge trapping and interface state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that the charge... (Read more)

Electronic properties of the vacancy–oxygen complex in unstrained Si_1–xGe_x crystals (0<x0.055) grown by the Czochralski method were studied by means of capacitance transient techniques. The enthalpy of electron ionization for the single... (Read more)

The electrical charge state of threading dislocations in differently doped GaN is investigated by scanning surface potential microscopy in conjunction with tapping mode atomic force microscopy. The dislocations are found to be either negatively charged or neutral depending on the type of doping... (Read more)

The intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 °C) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74±0.07 eV and a... (Read more)

Radiation-induced defects in silicon diodes were investigated after exposure to high doses of Co⁶⁰-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in... (Read more)

The electronic and atomic structures of the oxygen chains assigned to late thermal double donors (TDDs) in silicon are studied using accurate total-energy calculations. We find that the ring-type O-chain model is best suited for TDDs and better than the di-Y-lid-type O-chain model. The ring-type O... (Read more)

P-type regions were produced in undoped GaN films by Be⁺ and Be⁺ + O⁺ implantation and subsequent annealing at temperatures between 1000 and 1050 °C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level was... (Read more)

Dominant n-type conductivity in sulfur-doped chemical-vapor-deposited diamond is observed by Hall-effect measurement. The activation energy is estimated at 0.5–0.75 eV above 600 K. Below 600 K, the carrier concentration deviates from the activation energy, and Hall mobility decreases in... (Read more)

We identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (Te_As), Ga vacancies (V_Ga), and Ga vacancy–donor complexes... (Read more)

Positron annihilation has been applied to study thermally oxidized 4H- and 6H-SiC. The SiC/SiO₂ interface is found to contain a high density of open-volume defects. The positron trapping at the interface defects correlates with the charge of the interface determined by... (Read more)

We apply near-edge x-ray absorption fine structure spectroscopy, at the N K edge, in order to identify the signature of implantation-induced defects in the partial density of empty states in GaN implanted with O, Mg, and Si ions. The dose range was 10¹⁴–10¹⁸... (Read more)

The minority carrier (electron) capture process and the interface trap density of a TiN/Al₂O₃/p-Si metal–oxide–semiconductor capacitor were examined by deep level transient spectroscopy (DLTS). It was found that the activation energies of the large peaks... (Read more)

We have applied a low-energy positron beam to study epitaxial Si-doped GaN layers, where the grain size varies from 0.2 to 2–5 µm. Negatively charged Ga vacancies are found in n-type samples. Their concentration is independent of the grain size, suggesting that Ga vacancies exist... (Read more)

Electron paramagnetic resonance (EPR) has been used to investigate chromium ions in single crystals of CdGeAs₂ grown by the horizontal gradient freeze technique. Signals from Cr²⁺ and Cr⁴⁺ ions were observed near 12 K. The Cr²⁺ ions have the... (Read more)

The electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous... (Read more)

A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si⁺ ions were implanted into bulk 4H-SiC wafers using different ion fluxes... (Read more)

We used electrically detected magnetic resonance to study the microscopic structure of ion-implantation-induced point defects that remained in large-scale Si integrated circuits (Si LSIs). Two types of defects were detected in the source/drain (n⁺-type) region of... (Read more)

Optical absorption and electron paramagnetic resonance (EPR) techniques have been used to characterize the production and thermal decay of point defects in undoped single crystals of KD₂PO₄ grown at Lawrence Livermore National Laboratory. A crystal was irradiated at 77 K with x... (Read more)

A comparative study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) Si wafers, which differed mainly in interstitial oxygen concentration, upon 3 MeV proton irradiation with fluences of up to 2×10¹⁵... (Read more)

Measurements of the photoluminescence (PL) and photocurrent (PC) have been made on GaSe with excess Ga or Se atoms. The 1.77 eV emission band for the sample with excess Ga atoms is attributed to the transition from the donor level at 0.175 eV to the acceptor level at 0.152 eV. This donor level is... (Read more)

The features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaAs/GaAs heterostructure field-effect transistors both through experiments and two-dimensional numerical device simulations. Differently from electron traps located in the n-type semiconductor... (Read more)

Electron paramagnetic resonance (EPR) has been used to investigate molecular nitrogen and isolated nitrogen acceptors in single crystals of ZnO. These samples were grown by the seeded chemical vapor transport method with N₂ added to the gas stream. A five-line EPR spectrum is observed at... (Read more)

Defects in hydrothermal grown ZnO single crystals are studied as a function of annealing temperature using positron annihilation, x-ray diffraction, Rutherford backscattering, Hall, and cathodoluminescence measurements. Positron lifetime measurements reveal the existence of Zn vacancy related... (Read more)

Czochralski-grown silicon samples subjected to high temperature–high pressure (HTHP) treatments in the range of 900 °C were irradiated with fast neutrons. Transmission electron microscopy measurements revealed the presence of oxygen precipitates (SiO_x) and dislocation... (Read more)

The effects of hydrogen plasma treatment on high-quality bulk n-ZnO crystals were studied. It is shown that after plasma exposure at 200 °C for 0.5 h the hydrogen penetrates into the material down to about 20 µm and shows concentrations close to 10¹⁷ cm^–3... (Read more)

The effects of hydrogen on the electrical and optical properties of p-GaN were investigated. Hydrogen is readily incorporated into the material at temperatures of 250–350 °C, which is consistent with the low activation energy for diffusion reported by Seager et al. [J. Appl. Phys.... (Read more)

Single crystal type IIa 100 diamonds were implanted with sulfur, phosphorus, and argon ions under different implantation and annealing conditions. Shallow (sub-MeV) as well as deep (MeV) implantations into samples held at low (liquid nitrogen) ambient (room temperature) and high (400 °C)... (Read more)

Lead tungstate single crystals doped with Gd₂O₃ were grown by the Czochralski method in Ar atmosphere. The electron paramagnetic resonance of the Gd³⁺ ion in a PbWO₄ single crystal has been investigated at 9.4 GHz. The spectroscopic splitting tensor... (Read more)