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- 71. Appl. Phys. Lett. 91, 152102 (2007) , “N–O related shallow donors in silicon: Stoichiometry investigations”, H. E. Wagner, H. Ch. Alt, W. von Ammon, F. Bittersberger, A. Huber, and L. KoesterFor clarification of the unknown chemical composition of the electrically active N–O defects in silicon, an ingot with variable oxygen content and fixed nitrogen concentration was investigated by infrared spectroscopy. Shallow donor spectra taken at different sample positions, i.e., oxygen... (Read more)
- 72. Appl. Phys. Lett. 91, 142101 (2007) , “Dangling-bond defects and hydrogen passivation in germanium”, J. R. Weber, A. Janotti, P. Rinke, and C. G. Van de WalleThe application of germanium in complementary metal-oxide semiconductor technology is hampered by high interface-state densities. Using first-principles calculations, we investigate the effects of dangling bonds (DBs) and their interaction with hydrogen. We find that Ge DBs give rise to electronic... (Read more)
- 73. Appl. Phys. Lett. 91, 133507 (2007) , “Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices”, J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. KrishnanWe utilize a very sensitive electron spin resonance technique called spin-dependent tunneling to identify defect centers involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors. The defect's 29Si hyperfine... (Read more)
- 74. Appl. Phys. Lett. 91, 132105 (2007) , “Shallow acceptors in GaN”, T. A. G. Eberlein, R. Jones, S. Öberg, and P. R. BriddonRecent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that CN is the most... (Read more)
- 75. Appl. Phys. Lett. 91, 122109 (2007) , “Determining the defect parameters of the deep aluminum-related defect center in silicon”, Philipp Rosenits, Thomas Roth, Stefan W. Glunz, and Svetlana BeljakowaThrough a combined application of two characterization methods, deep-level transient spectroscopy and lifetime spectroscopy, the lifetime-limiting defect level in intentionally aluminum-contaminated Czochralski silicon has been analyzed and a complete set of defect parameters could be obtained. This... (Read more)
- 76. Appl. Phys. Lett. 91, 104105 (2007) , “Identification of defects in Y3Al5O12 crystals by positron annihilation spectroscopy”, F. A. Selim, D. Solodovnikov, M. H. Weber, and K. G. LynnPositron annihilation, thermoluminescence, and optical absorption measurements were applied with the aid of several annealing and diffusion procedures to investigate the nature of point defects in Y3Al5O12 (YAG) single crystals. By annealing at 1500 °C in air or... (Read more)
- 77. Appl. Phys. Lett. 91, 092107 (2007) , “Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN”, O. Lopatiuk-Tirpak, L. Chernyak, Y. L. Wang, F. Ren, S. J. Pearton, and K. GartsmanThe electron irradiation-induced increase of minority carrier diffusion length was studied as a function of hole concentration in Mg-doped GaN. Variable-temperature electron beam induced current measurements yielded activation energies of 264, 254, 171, and 144 meV for samples with hole... (Read more)
- 78. Appl. Phys. Lett. 91, 043503 (2007) , “Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN”, Aurangzeb Khan, J. Gou, M. Imazumi, and M. YamaguchiThe authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron... (Read more)
- 79. Appl. Phys. Lett. 91, 022913 (2007) , “Defects in hydrothermally grown bulk ZnO”, H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. DurbinHydrothermally grown bulk ZnO (Tokyo Denpa) was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20 eV, ideality factor of 1.04). Two main shallow defects, T1 and T2, with thermal activation energies of 13 and 52 meV, respectively, were... (Read more)
- 80. Appl. Phys. Lett. 90, 152108 (2007) , “Correlation between carrier recombination and p-type doping in P monodoped and In–P codoped ZnO epilayers”, J. D. Ye, S. L. Gu, F. Li, S. M. Zhu, R. Zhang, Y. Shi, Y. D. Zheng, X. W. Sun, G. Q. Lo, and D. L. KwongThe carrier recombination processes in p-type ZnO epilayers with P monodoping and In–P codoping have been studied by temperature-dependent photoluminescence spectroscopy. Good correlations were observed between carrier recombination and acceptor and donor energy levels. The exciton... (Read more)
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