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- 101. Appl. Phys. Lett. 90, 032906 (2007) , “Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems”, Ling Dai, V. B. C. Tan, Shuo-Wang Yang, Ping Wu, and Xian-Tong ChenIn ultralow-k dielectric systems, the porous dielectrics are normally sealed by a SiC film before the deposition of a Ta diffusion barrier layer. However, the Ta barrier effects are negated when the SiC films are fabricated by plasma-enhanced chemical vapor deposition (PECVD). Through large... (Read more)
- 102. Appl. Phys. Lett. 90, 032102 (2007) , “Dynamic nuclear polarization induced by hot electrons”, Yosuke Komori and Tohru OkamotoA method for local dynamic nuclear polarization is demonstrated in a GaAs/AlGaAs heterostructure at the Landau level filling factor ν=3. Using a narrow channel sample, where the width varies stepwise along the electron flow, the authors find that electron cooling (heating) causes the polarization... (Read more)
- 103. Appl. Phys. Lett. 90, 023112 (2007) , “Electrically tunable defects in metallic single-walled carbon nanotubes”, Ji-Yong ParkA defect whose electron transmission probability can be controlled by electric field is intentionally created on a metallic single-walled carbon nanotube (SWCNT) with a voltage pulse from a tip of an atomic force microscope (AFM). Localized characteristics of the created defect are elucidated with... (Read more)
- 104. Appl. Phys. Lett. 90, 021920 (2007) , “Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?”, I. A. Buyanova, W. M. Chen, M. Izadifard, S. J. Pearton, C. Bihler, M. S. Brandt, Y. G. Hong, and C. W. TuSecondary ion mass spectrometry and photoluminescence are employed to evaluate the origin and efficiency of hydrogen passivation of nitrogen in GaNAs and GaNP. The hydrogen profiles are found to closely follow the N distributions, providing unambiguous evidence for their preferential binding as the... (Read more)
- 105. Appl. Phys. Lett. 90, 013116 (2007) , “Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy”, D. M. Cornet, V. G. M. Mazzetti, and R. R. LaPierreInP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the {−211} family of crystal planes for all NW diameters, indicating minimal... (Read more)
- 106. Appl. Phys. Lett. 90, 013104 (2007) , “Scanning tunneling microscopy investigations of hydrogen plasma-induced electron scattering centers on single-walled carbon nanotubes”, G. Buchs, P. Ruffieux, P. Gröning, and O. GröningThe authors report on the generation of localized defects on single-walled carbon nanotubes by means of a hydrogen electron cyclotron resonance plasma. The defects have been investigated using scanning tunneling microscopy (STM) and show an apparent topographic height in the STM of 1–3 ... (Read more)
- 107. Appl. Phys. Lett. 90, 012107 (2007) , “Unambiguous identification of the PL-I9 line in zinc oxide”, S. Müller, D. Stichtenoth, M. Uhrmacher, H. Hofsäss, C. Ronning, and J. RöderRadioactive 111In atoms implanted into zinc oxide (ZnO) single crystals occupy substitutional Zn lattice sites after annealing to 700 °C. The respective photoluminescence (PL) spectra of the samples were monitored while the donor In decayed into stable and isolectronic Cd. The... (Read more)
- 108. Appl. Phys. Lett. 90, 011905 (2007) , “Dislocation junctions as barriers to threading dislocation migration”, Siu Sin Quek, Zhaoxuan Wu, Yong-Wei Zhang, Yang Xiang, and David J. SrolovitzLevel set simulations of dislocation dynamics in biaxially strained, heteroepitaxial films reveal interesting kinetic and thermodynamic mechanisms for blocking the migration of threading dislocations. Two dislocations on the same or on intersecting slip planes may react to form a threading... (Read more)
- 109. J. Appl. Phys. 102, 113702 (2007) , “Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy”, S. A. Reshanov and G. PenslThe effect of the Schottky barrier height on the detection of the concentration of midgap defects using deep level transient spectroscopy (DLTS) is experimentally and theoretically studied for EH6 and EH7 defects in 4H-SiC. In this special case, the DLTS signal height... (Read more)
- 110. J. Appl. Phys. 102, 103514 (2007) , AIP , “Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies”, A. K. Mishra, S. K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha, and D. DasDefects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by photoluminescence (PL) and positron annihilation spectroscopy (PAS) techniques. The as-prepared sample was heat treated at different temperatures to obtain nanocrystals in the size range of 19–39 ... (Read more)
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