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- 1. Phys. Rev. 133, A1163 (1964) , “Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption”, W. J. Choyke, D. R. Hamilton, and Lyle PatrickAbsorption measurements of cubic SiC at 4.2?K show that the absorption edge is due to indirect, exciton-creating transitions, with an exciton energy gap of 2.390 eV. The energies of the phonons participating in these transitions are 46, 79, 94, and 103 meV, and suggest that the conduction-band... (Read more)
- 2. J. Vac. Sci. Technol. 9, 87-90 (1972) , “Properties of ZnO Films Prepared by dc and rf Diode Sputtering”, J. VuillodA brief description of the dc and rf diode sputtering unit is first presented. The study of properties of the films is reviewed taking into consideration two main parameters, oxygen partial pressure and substrate temperature. Reflection electron diffraction and x-ray diffraction studies show that... (Read more)
- 3. J. Lumin. 5, 385-405 (1972) , “Trapping and recombination processes in the thermoluminescence of Li-doped ZnO single crystals*1”, D. ZwingelThe thermoluminescence of Li-doped ZnO single crystals is investigated in the temperature range 4.2–300 K. A glow curve is observed with three maxima, two of them emitting the strong polarized yellow luminescence of ZnO. By varying the Li concentration in the range 0.1–200 ppm a change... (Read more)
- 4. Solid State Commun. 14, 45-49 (1974) , “Paramagnetic and optical properties of Na-doped ZnO single crystals”, D. Zwingel and F. GärtnerESR-spectra of Na-doped ZnO single crystals are reported, caused by a hole trapped at the Na+ center. The isotropic part of the HFS is positive. An emission, due to recombination at the center, is reported, polarized c and peaked at 570 nm. The influence of covalent bonding is discussed. (Read more)
- 5. Solid State Commun. 15, 1475-1479 (1974) , “Optical and paramagnetic properties of ZnO-Crystals simultaneously doped with copper and hydrogen”, E. Mollwo, G. Müller and D. ZwingelIn ZnO crystals, containing both Cu and H(D), we observe characteristic absorption peaks in the near i.r. and three new EPR signals. We explain these results by the formation of impurity complexes consisting of an OH center and one or two Cu ions. (Read more)
- 6. Z. Physik B 23, 171-181 (1976) , “Intrinsic Defects in Electron Irradiated Zinc Oxide”, B. Schallenberge, A. Hausmann
- 7. phys. stat. sol. (a) 55, 251 (1979) , “Photo-EPR of Dislocations in Silicon”, R. Erdmann, H. Alexander.The dependence of the EPR spectrum of dislocations in deformed silicon on illumination with monochromatic light reveals the two EPR centers Si - K1 (S < 1/2) to be different ionization states of one and the same dislocation center. The energy level separating these ionization states lies near the... (Read more)
- 8. J. Non-Cryst. Solids 34, 339-356 (1979) , “ESR and optical absorption of cupric ion in borate glasses”, H. Hosono, H. Kawazoe and T. KanazawaESR and optical absorption of Cu2+ were measured in xNa2O(100−x)B2O3 (1 ≤ x ≤ 75), x ZnO(100−x)B2O3 (46 ≤ x ≤ 64) and x Pb(100−x)b2O3 (20 ≤ x ≤ 75) glasses, where x is expressed in mol.%. Spin hamiltonian parameters and ligand field... (Read more)
- 9. Phys. Rev. Lett. 51, 423 (1983) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, Katsumi Tanimura, Takeshi Tanaka, and Noriaki ItohThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 10. Appl. Phys. Lett. 44, 228-230 (1984) , “Optically induced electron spin resonance and spin-dependent recombination in Si/SiO2”, B. HendersonIn state-of-the-art Si/SiO2 wafers the concentration of paramagnetic interface states (1010 cm2) is almost too low to be detected by electron spin resonance (ESR). This letter describes experiments which show that the ESR signal of singly occupied dangling bond... (Read more)
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