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- 1. Phys. Rev. B 70, 245204 (2004) , “Silicon vacancy annealing and DI luminescence in 6H-SiC”, M. V. B. Pinheiro, E. Rauls, U. Gerstmann, S. Greulich-Weber, H. Overhof, and J.-M. SpaethCombining electron paramagnetic resonance measurements with ab initio calculations, we identify the VCCSi(SiCCSi) complex as a second annealing product of the silicon vacancy via an analysis of resolved carbon hyperfine interactions and of... (Read more)
- 2. Phys. Rev. B 69, 45208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 3. Phys. Rev. B 69, 45207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 4. Mater. Sci. Eng. 93, 39-48 (2002) , “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. MolnarWe will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN single quantum well (SQW) light emitting diodes (LEDs) through magnetic resonance techniques. Electron paramagnetic resonance (EPR) and... (Read more)
- 5. Phys. Rev. B 65, 125207 (2002) , “Optical detection of electron paramagnetic resonance in low-dislocation-content GaN grown by hydride vapor-phase epitaxy”, C. Bozdog, G. D. Watkins, H. Sunakawa, N. Kuroda, A. UsuiThree broad overlapping photoluminescence bands, centered at ?1.75?eV (red), ?2.2?eV (yellow), and ?2.33?eV (green), are observed in low-dislocation-content GaN grown by the hydride vapor-phase epitaxy method. Optical detection of electron paramagnetic resonance (ODEPR) studies reveal that each is... (Read more)
- 6. Phys. Rev. B 62, 16572 (2000) , “Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN”, Mt. Waganer, I. A. Buyanova, N. Q. Thinh, W. M. Chen, B. Monemar, J. L. Lindström, H. Amano, I. AkasakiProperties of the 0.88-eV photoluminescence (PL) in electron-irradiated wurtzite GaN have been investigated in detail by a combination of various magneto-optical techniques, including Zeeman measurements of PL, optically detected magnetic resonance (ODMR), and level anticrossing (LAC). ODMR... (Read more)
- 7. Phys. Rev. B 59, 12479-12486 (1999) , “Optical detection of electron paramagnetic resonance in electron-irradiated GaN”, C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, R. L. Henry2.5 MeV electron irradiation of wurtzite GaN epitaxially grown on sapphire substrates greatly reduces its near-UV and visible luminescence, producing two bands in the near infrared. In one of these, a broad structureless band centered at ∼0.95 eV, three optically detected S=1/2 electron... (Read more)GaN| ODMR PL electron-irradiation| 69Ga EM L1 L2 L3 L4 n-type semi-insulating .inp files: GaN/L3 GaN/L4 | last update: Takahide Umeda
- 8. J. Cryst. Growth 189-190, 561 (1998) , “Investigations of undoped and Mg-doped wurtzite GaN with luminescence-detected paramagnetic resonance in the 4 mm band”, F. K. Koschnick, K. Michael, J. -M. Spaeth, B. Beaumont, P. Gibart, J. Off, A. Sohmer and F. ScholzNominally undoped and Mg-doped wurtzite GaN grown with MOVPE on sapphire substrates were investigated with photoluminescence-detected electron paramagnetic resonance (PL-EPR). For enhanced resolution a microwave frequency of 72 GHz (V-band) was used. PL-EPR was measured via the yellow luminescence... (Read more)
- 9. Phys. Rev. B 55, 2863 (1997) , “Optically detected magnetic resonance studies of defects in electron-irradiated 3C SiC layers”, N. T. Son, E. Sörman, W. M. Chen, C. Hallin, O. Kordina, B. Monemar, and E. JanzénDefects in electron-irradiated 3C SiC were studied by optically detected magnetic resonance (ODMR). In addition to the isotropic L2 center previously reported, an ODMR spectrum labeled L3, with a trigonal symmetry and an effective electron spin S=1, was observed after annealing at ?750 °C. The g... (Read more)
- 10. phys. stat. sol. (a) 162, 95-151 (1997) , “EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes”, S. Greulich-WeberInvestigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 11. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
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