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- 1. Mater. Sci. Eng. R 33, 135-207 (2001) , “Comprehensive characterization of hydride VPE grown GaN layers and templates”, H. MorkoƧGaN community has recently recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this... (Read more)
- 2. J. Vac. Sci. Technol. 9, 87-90 (1972) , “Properties of ZnO Films Prepared by dc and rf Diode Sputtering”, J. VuillodA brief description of the dc and rf diode sputtering unit is first presented. The study of properties of the films is reviewed taking into consideration two main parameters, oxygen partial pressure and substrate temperature. Reflection electron diffraction and x-ray diffraction studies show that... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Materials
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Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
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