The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (C_SiV_C^-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. (Read more)

In this paper, we unambiguously re-determine the spin multiplicity of T_V2a by pulsed electron nucleus double resonance technique. The T_V2a center is one of the most commonly observed defects in 4H-SiC, and its origin was... (Read more)

The carbon vacancy is a dominant defect in 4H-SiC, and the "EI5" electron-paramagnetic-resonance (EPR) spectrum originates from positively charged carbon vacancies (V_C⁺) at quasicubic sites. The observed state for EI5, however, has been attributed to a... (Read more)

The EI5 and EI6 centers are typical intrinsic defects in radiation-damaged and semi-insulating 4H-SiC. So far, their origins have been assigned to positively charged carbon vacancies (V_C⁺) and silicon antisites (Si_C⁺), respectively. However,... (Read more)