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- 1. Physica B 340-342, 15-24 (2003) , “Defects in SiC”, E. Janzén, I. G. Ivanov, N. T. Son, B. Magnusson, Z. Zolnai, A. Henry, J. P. Bergman, L. Storasta, F. CarlssonRecent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H–SiC in the dipole approximation are derived and the ionization energy for the N donor at... (Read more)
- 2. Phys. Rev. B 66, 235202 (2002) , “Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C3v symmetry in n-type 4H-SiC”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. IsoyaThe TV2a center, which was suggested to be the excited triplet state (S=1) of the neutral silicon vacancy related defect [Sörman et al., Phys. Rev. B 61, 2613 (2000)] in the electron-irradiated n-type 4H-SiC has been studied by continuous wave and pulsed electron paramagnetic resonance... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Materials
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